CN117335763A - Gain self-adaptive temperature regulation and control circuit - Google Patents

Gain self-adaptive temperature regulation and control circuit Download PDF

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Publication number
CN117335763A
CN117335763A CN202311629497.9A CN202311629497A CN117335763A CN 117335763 A CN117335763 A CN 117335763A CN 202311629497 A CN202311629497 A CN 202311629497A CN 117335763 A CN117335763 A CN 117335763A
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China
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voltage
current
tube
output end
gain
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姚鹏飞
袁晖
王建钦
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Xiamen Ktd Electronics Co ltd
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Xiamen Ktd Electronics Co ltd
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Priority to CN202311629497.9A priority Critical patent/CN117335763A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
    • H03G3/20—Automatic control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit

Abstract

The invention discloses a gain self-adaptive temperature regulation circuit, which comprises a temperature detection unit, a voltage-controlled current source, a current-to-voltage unit and a variable gain amplifier which are connected in sequence; the temperature detection unit detects the temperature of the variable gain amplifier and generates a corresponding temperature voltage signal; the voltage-controlled current source comprises a current mirror and at least one voltage-to-current unit, and generates a corresponding regulation current signal according to the temperature-voltage signal, wherein the regulation current signal changes approximately linearly with the temperature-voltage signal; the current-to-voltage unit generates a corresponding regulation voltage signal according to the regulation current signal; the variable gain amplifier correspondingly regulates the link gain of the variable gain amplifier according to the regulating voltage signal, so that the total gain of the variable gain amplifier is kept dynamically stable along with the temperature change. The invention can realize continuous fine regulation and control of the link gain of the variable gain amplifier on the premise of not sacrificing the linearity of the circuit.

Description

Gain self-adaptive temperature regulation and control circuit
Technical Field
The invention relates to the field of electronic circuits, in particular to a gain self-adaptive temperature regulation circuit.
Background
The electron mobility and the resistance of the tube in the existing amplifier can change along with temperature fluctuation, so that the total gain of the amplifier can change greatly along with temperature change, the gain can seriously influence the use of the amplifier along with the temperature change, the total gain of the amplifier is the sum of the link gain of the amplifier and the temperature gain change quantity, and the temperature gain change quantity refers to the gain change of the amplifier caused by temperature.
In order to solve the problem that the total gain of the amplifier changes along with the temperature change, the existing solutions of the amplifier mainly comprise the following three types:
(1) The first solution is: firstly, detecting the temperature of an amplifier through a temperature sensor to generate a corresponding digital temperature signal, and regulating and controlling the link gain of the amplifier through the digital temperature signal, so that the total gain of the amplifier is kept dynamically stable along with the temperature change; for example, chinese patent CN106788486a adopts a first solution, which can finely adjust the link gain of the amplifier, but because the amplifier is digitally controlled, the link gain of the amplifier is discontinuously changed, which may deteriorate the signal-to-noise ratio;
(2) The second solution is: the transconductance of the amplifier IS regulated by a current source IS with a temperature coefficient, so that the link gain of the amplifier IS regulated and controlled, and the total gain of the amplifier IS kept dynamically stable along with the temperature change; for example, chinese patent CN113346846a adopts a second solution, which can continuously fine-tune the link gain of the amplifier, but can cause the current of the amplifying link of the amplifier to change, and when the amplifying link current decreases, the linearity of the circuit is degraded, i.e. the second solution may sacrifice the linearity of the circuit;
(3) Third solution: the on-resistance of the tube of the amplifier is regulated by a voltage source with a temperature coefficient, so that the link gain of the amplifier is regulated, and the total gain of the amplifier is kept dynamically stable along with the temperature change; for example, chinese patent CN107769744a adopts a third solution, which cannot finely control the link gain of the amplifier, and is susceptible to process fluctuation to cause inconsistent control of different amplifiers.
In view of the above-mentioned problems, there is a need to develop a gain-adaptive temperature regulation circuit that can maintain the overall gain of a variable gain amplifier dynamically stable with temperature changes and can achieve continuous fine regulation of the link gain of the variable gain amplifier without sacrificing circuit linearity.
Disclosure of Invention
The invention aims to provide a gain self-adaptive temperature regulation circuit which can keep the total gain of a variable gain amplifier dynamically stable along with the change of temperature and can realize continuous fine regulation of the link gain of the variable gain amplifier on the premise of not sacrificing the linearity of the circuit.
In order to achieve the above object, the solution of the present invention is:
a gain self-adaptive temperature regulation circuit comprises a temperature detection unit, a voltage-controlled current source, a current-to-voltage unit and a variable gain amplifier which are connected in sequence; the temperature detection unit detects the temperature of the variable gain amplifier and generates a corresponding temperature voltage signal; the voltage-controlled current source generates a corresponding regulation current signal according to the temperature voltage signal, and the regulation current signal changes approximately linearly along with the temperature voltage signal; the voltage-controlled current source comprises a current mirror and at least one voltage-to-current unit, the input end of each voltage-to-current unit is connected with the voltage input end of the voltage-controlled current source, the output end of each voltage-to-current unit is connected with the input end of the current mirror, the output end of the current mirror is connected with the current output end of the voltage-controlled current source, the voltage input end of the voltage-controlled current source is connected with a temperature voltage signal, and the current output end of the voltage-controlled current source outputs a regulation current signal; the current-to-voltage unit generates a corresponding regulation voltage signal according to the regulation current signal; the variable gain amplifier correspondingly regulates the link gain of the variable gain amplifier according to the regulating voltage signal, so that the total gain of the variable gain amplifier is kept dynamically stable along with the temperature change.
The temperature detection unit has a positive temperature coefficient or a negative temperature coefficient.
Each voltage-to-current unit comprises an N-type differential amplifier, a reference voltage circuit and a current source IS, wherein a first input end of the N-type differential amplifier IS connected with an input end of the voltage-to-current unit, a second input end of the N-type differential amplifier IS connected with an output end of the reference voltage circuit, a power end of the N-type differential amplifier IS connected with a control power supply VCC, a grounding end of the N-type differential amplifier IS grounded through the current source IS, and an output end of the N-type differential amplifier IS connected with an output end of the voltage-to-current unit.
The N-type differential amplifier comprises an NMOS tube NM1 and an NMOS tube NM2, the sizes and parameters of the NMOS tube NM1 and the NMOS tube NM2 are the same, the grid electrode of the NMOS tube NM1 and the grid electrode of the NMOS tube NM2 are respectively connected with the first input end and the second input end of the N-type differential amplifier, or the grid electrode of the NMOS tube NM1 and the grid electrode of the NMOS tube NM2 are respectively connected with the second input end and the first input end of the N-type differential amplifier, the drain electrode of the NMOS tube NM1 is connected with the power end of the N-type differential amplifier, the drain electrode of the NMOS tube NM2 is connected with the output end of the N-type differential amplifier, and the source electrode of the NMOS tube NM1 and the source electrode of the NMOS tube NM2 are connected with the grounding end of the N-type differential amplifier.
Each voltage-to-current unit comprises a P-type differential amplifier, a reference voltage circuit and a current source IS, wherein a first input end of the P-type differential amplifier IS connected with an output end of the reference voltage circuit, a second input end of the P-type differential amplifier IS connected with an input end of the voltage-to-current unit, a power end of the P-type differential amplifier IS connected with a control power VCC through the current source IS, a grounding end of the P-type differential amplifier IS grounded, and an output end of the P-type differential amplifier IS connected with an output end of the voltage-to-current unit.
The P-type differential amplifier comprises a PMOS tube PM1 and a PMOS tube PM2, the sizes and parameters of the PMOS tube PM1 and the PMOS tube PM2 are the same, the grid electrode of the PMOS tube PM1 and the grid electrode of the PMOS tube PM2 are respectively connected with the first input end and the second input end of the P-type differential amplifier, or the grid electrode of the PMOS tube PM1 and the grid electrode of the PMOS tube PM2 are respectively connected with the second input end and the first input end of the P-type differential amplifier, the source electrode of the PMOS tube PM1 and the source electrode of the PMOS tube PM2 are connected with the power end of the P-type differential amplifier, the drain electrode of the PMOS tube PM1 is connected with the ground end of the P-type differential amplifier, and the drain electrode of the PMOS tube PM2 is connected with the output end of the P-type differential amplifier.
The reference voltage circuit comprises a resistor Rb1 and a resistor Rb2, wherein a first end of the resistor Rb1 is connected with a control power supply VCC, a second end of the resistor Rb1 and a first end of the resistor Rb2 are connected with an output end of the reference voltage circuit, and a second end of the resistor Rb2 is grounded.
The variable gain amplifier comprises a differential amplifier U1 and a gain control tube Mt, the gain control tube Mt is a PMOS tube, a first output end of the differential amplifier U1 and an input end of the gain control tube Mt are connected with a first output end of the variable gain amplifier, a second output end of the differential amplifier U1 and an output end of the gain control tube Mt are connected with a second output end of the variable gain amplifier, a control end of the gain control tube Mt is connected with a gain control end of the variable gain amplifier, and a gain control end of the variable gain amplifier is connected with a control voltage signal.
The current-to-voltage conversion unit comprises a voltage acquisition unit and a conversion tube Mz, the type of the conversion tube Mz is the same as that of the gain regulation tube Mt, two voltage acquisition ends of the voltage acquisition unit are respectively connected with a first output end and a second output end of the variable gain amplifier, a voltage control end of the voltage acquisition unit is connected with an input end of the conversion tube Mz, an output end and a control end of the conversion tube Mz are connected with a current input end of the current-to-voltage conversion unit, and an output end and a control end of the conversion tube Mz are also connected with a voltage output end of the current-to-voltage conversion unit; the current input end of the current-to-voltage unit is connected with the regulating current signal, and the voltage output end of the current-to-voltage unit outputs the regulating voltage signal.
The variable gain amplifier comprises a differential amplifier U1 and a gain control tube Mt ', the gain control tube Mt ' is an NMOS tube, a first output end of the differential amplifier U1 and an input end of the gain control tube Mt ' are connected with a first output end of the variable gain amplifier, a second output end of the differential amplifier U1 and an output end of the gain control tube Mt ' are connected with a second output end of the variable gain amplifier, a control end of the gain control tube Mt ' is connected with a gain control end of the variable gain amplifier, and a gain control end of the variable gain amplifier is connected with a control voltage signal.
The current-to-voltage unit comprises a voltage acquisition unit and a conversion tube Mz ', the type of the conversion tube Mz' is the same as that of the gain regulation tube Mt ', two voltage acquisition ends of the voltage acquisition unit are respectively connected with a first output end and a second output end of the variable gain amplifier, a voltage control end of the voltage acquisition unit is connected with an output end of the conversion tube Mz', an input end and a control end of the conversion tube Mz 'are connected with a current input end of the current-to-voltage unit, and an input end and a control end of the conversion tube Mz' are also connected with a voltage output end of the current-to-voltage unit; the current input end of the current-to-voltage unit is connected with the regulating current signal, and the voltage output end of the current-to-voltage unit outputs the regulating voltage signal.
After the scheme is adopted, the temperature detection unit detects the temperature of the variable gain amplifier and generates a corresponding temperature voltage signal, the voltage-controlled current source generates a corresponding regulation current signal according to the temperature voltage signal, the current-to-voltage conversion unit generates a corresponding regulation voltage signal according to the regulation current signal, and the variable gain amplifier correspondingly regulates the link gain of the variable gain amplifier according to the regulation voltage signal, so that the total gain of the variable gain amplifier can be kept dynamically stable along with the temperature change. The current-to-voltage unit generates a corresponding regulation voltage signal according to the regulation current signal and correspondingly regulates the link gain of the variable gain amplifier, so that continuous and fine regulation of the link gain of the variable gain amplifier can be realized on the premise of not sacrificing the linearity of the circuit.
Drawings
Fig. 1 is a functional block diagram of the present invention.
Fig. 2 is a schematic circuit diagram of a first embodiment of the present invention.
Fig. 3 is a schematic circuit diagram of a second embodiment of the present invention.
Fig. 4 is a schematic circuit diagram of a third embodiment of the present invention.
Fig. 5 is a schematic circuit diagram of a fourth embodiment of the present invention.
Fig. 6 is a schematic circuit diagram of a fifth embodiment of the present invention.
Fig. 7 is a schematic circuit diagram of a sixth embodiment of the present invention.
Detailed Description
As shown in fig. 1 to 7, the present invention discloses a gain adaptive temperature regulation circuit, which comprises a temperature detection unit, a voltage-controlled current source, a current-to-voltage unit and a variable gain amplifier, which are sequentially connected; the temperature detection unit detects the temperature of the variable gain amplifier and generates a corresponding temperature voltage signal; the voltage-controlled current source generates a corresponding regulation current signal according to the temperature voltage signal, and the regulation current signal changes approximately linearly along with the temperature voltage signal; the current-to-voltage unit generates a corresponding regulation voltage signal according to the regulation current signal; the variable gain amplifier correspondingly regulates the link gain of the variable gain amplifier according to the regulating voltage signal, so that the total gain of the variable gain amplifier is kept dynamically stable along with the temperature change.
In the invention, the temperature of the variable gain amplifier is detected by the temperature detection unit and a corresponding temperature voltage signal is generated, the voltage-controlled current source generates a corresponding regulation current signal according to the temperature voltage signal, the current-to-voltage conversion unit generates a corresponding regulation voltage signal according to the regulation current signal, and the variable gain amplifier correspondingly regulates the link gain of the variable gain amplifier according to the regulation voltage signal, so that the total gain of the variable gain amplifier can be kept dynamically stable along with the temperature change. The current-to-voltage unit generates a corresponding regulation voltage signal according to the regulation current signal and correspondingly regulates the link gain of the variable gain amplifier, so that continuous and fine regulation of the link gain of the variable gain amplifier can be realized on the premise of not sacrificing the linearity of the circuit.
In order to further explain the technical scheme of the invention, the invention is explained in detail by specific examples.
Example 1
In conjunction with fig. 2, in a first embodiment of the present invention, an output end detected by the temperature detecting unit is connected to a voltage input end of a voltage-controlled current source, a current output end of the voltage-controlled current source is connected to a current input end of a current-to-voltage unit, and a voltage output end of the current-to-voltage unit is connected to a gain regulation end of the variable gain amplifier. The output end of the temperature detection unit outputs a temperature voltage signal, the voltage input end of the voltage-controlled current source is connected with the temperature voltage signal, the current output end of the voltage-controlled current source outputs a regulating current signal, the current input end of the current-to-voltage unit is connected with the regulating current signal, the voltage output end of the current-to-voltage unit outputs a regulating voltage signal, and the gain regulating end of the variable gain amplifier is connected with the regulating voltage signal.
In a first embodiment of the present invention, the temperature detecting unit has a positive temperature coefficient or a negative temperature coefficient, and the temperature detecting unit has the following characteristics:
V T =k×t; wherein V is T Is the output voltage of the temperature detection unit, namely the amplitude of the temperature voltage signal; k is the temperature coefficient of the temperature detection unit, and T is the temperature of the variable gain amplifier.
In a first embodiment of the present invention, the voltage-controlled current source includes a current mirror and a voltage-to-current unit; the input end of the voltage-to-current unit is connected with the voltage input end of the voltage-controlled current source, the output end of the voltage-to-current unit is connected with the input end of the current mirror, the output end of the current mirror is connected with the current output end of the voltage-controlled current source, and the current mirror enables the regulation and control current signal not to fluctuate due to circuit interference. The voltage-to-current unit comprises an N-type differential amplifier, a reference voltage circuit and a current source IS, wherein a first input end of the N-type differential amplifier IS connected with an input end of the voltage-to-current unit, a second input end of the N-type differential amplifier IS connected with an output end of the reference voltage circuit, a power end of the N-type differential amplifier IS connected with a control power supply VCC, a grounding end of the N-type differential amplifier IS grounded through the current source IS, and an output end of the N-type differential amplifier IS connected with an output end of the voltage-to-current unit. The N-type differential amplifier comprises an NMOS tube NM1 and an NMOS tube NM2, the sizes and parameters of the NMOS tube NM1 and the NMOS tube NM2 are the same, a grid electrode of the NMOS tube NM1 is connected with a first input end of the N-type differential amplifier, a grid electrode of the NMOS tube NM2 is connected with a second input end of the N-type differential amplifier, a drain electrode of the NMOS tube NM1 is connected with a power end of the N-type differential amplifier, a drain electrode of the NMOS tube NM2 is connected with an output end of the N-type differential amplifier, and a source electrode of the NMOS tube NM1 and a source electrode of the NMOS tube NM2 are connected with a grounding end of the N-type differential amplifier. The reference voltage circuit comprises a resistor Rb1 and a resistor Rb2, wherein a first end of the resistor Rb1 is connected with a control power supply VCC, a second end of the resistor Rb1 and a first end of the resistor Rb2 are connected with an output end of the reference voltage circuit, and a second end of the resistor Rb2 is grounded.
In a first embodiment of the present invention, the voltage-controlled current source has the following characteristics:
when (V) b -ΔV)≤V T ≤(V b +Δv), then there are:
I in =I 0 =I S /2-1/2*(μ 1 *C ox1 *I S ) 1/2 *(V T -V b )*[1-(μ 1 *C ox1 *W 1 /L 1 )/(4*I S )*(V T -V b ) 2 ] 1/2 ；
when V is T ﹤(V b - Δv), then there are: i in =I 0 =I S ；
When V is T ＞(V b +Δv), then there are: i in =I 0 =0；
ΔV=[(2*I S )/(μ 1 *C ox1 *W 1 /L 1 )] 1/2 ；
I out =a*I in ；
Wherein V is b For the output voltage of the reference voltage circuit, I S IS the current of the current source IS, I out For the output current of the current mirror (i.e. regulating the current of the current signal), a is the mirror image amplification factor of the current mirror, I in Is the input current of the current mirror, I 0 Is a voltage-to-current unitμ 1 For electron mobility of NMOS tube NM1 and NM2, C ox1 The capacitance value W of the gate oxide layer of the unit area of the NMOS tube NM1 and the NMOS tube NM2 1 For the channel widths of NMOS tube NM1 and NM2, L 1 The channel lengths of the NMOS transistor NM1 and the NMOS transistor NM2 are shown.
In the first embodiment of the present invention, when (V b -ΔV)≤V T ≤(V b +Δv), and (V T -V b ) 2 Far less than (4*I) S )/(μ 1 *C ox1 *W 1 /L 1 ) When the method is used, the following steps are: i out =a*I in ≒a*[I S /2-(μ 1 *C ox1 *I S ) 1/2 *(V T -V b )/2]At this time, the regulation current signal is considered to change approximately linearly with the temperature voltage signal (the regulation current signal is inversely related to the temperature voltage signal), so the voltage-controlled current source can be designed by designing the output voltage of the reference voltage circuit, the channel lengths and channel widths of the NMOS transistor NM1 and the NMOS transistor NM2, the electron mobility of the NMOS transistor NM1 and the NMOS transistor NM2, and the capacitance value of the gate oxide layer per unit area, so that the regulation current signal changes approximately linearly with the temperature voltage signal.
In a first embodiment of the present invention, the variable gain amplifier includes a differential amplifier U1 and a gain control tube Mt, where the gain control tube Mt is a PMOS tube, a first output end of the differential amplifier U1 and an input end of the gain control tube Mt are connected to a first output end of the variable gain amplifier, a second output end of the differential amplifier U1 and an output end of the gain control tube Mt are connected to a second output end of the variable gain amplifier, and a control end of the gain control tube Mt is connected to a gain control end of the variable gain amplifier; the first output end and the second output end of the variable gain amplifier are used for being connected with a load circuit of the rear end. The variable gain amplifier has the following characteristics:
Gaim=Gm*R total (S) ==Gm*（Rout*Ron*Rin）/（Rout+Ron+Rin）；
Wherein Gaim is the link gain of the variable gain amplifier, gm is the transconductance of the differential amplifier U1, rout is the output impedance of the differential amplifier U1, and Ron is the conductance of the gain control tube MtOn-resistance, rin is the input impedance of the load circuit, R Total (S) Is the total impedance of the differential amplifier U1, the gain regulating tube Mt and the load circuit which are connected in parallel.
When the voltage of the gain regulation end of the variable gain amplifier changes (namely, when the voltage of the regulation voltage signal is transmitted to change), the gate-source voltage of the gain regulation tube Mt changes, so that the on-resistance of the gain regulation tube Mt correspondingly changes, and then the link gain of the variable gain amplifier is regulated. On-resistance ron= [ (μ) of gain control tube Mt 2 *C ox2 *W 2 /L 2 )*（V gs2 -V th2 ）] -1 ；μ 2 For electron mobility of gain-controlling tube Mt, C ox2 The capacitance value W of the gate oxide layer in unit area of the gain control tube Mt 2 For regulating the channel width of the tube Mt, L 2 For regulating the channel length of the gain control tube Mt, V gs2 For the gate-source voltage, V, of the gain-control tube Mt th2 Is the threshold voltage of the gain control tube Mt.
In a first embodiment of the present invention, the current-to-voltage unit includes a voltage acquisition unit and a switching tube Mz, two voltage acquisition ends of the voltage acquisition unit are respectively connected to a first output end and a second output end of the variable gain amplifier, a voltage control end of the voltage acquisition unit is connected to an input end of the switching tube Mz, an output end and a control end of the switching tube Mz are connected to a current input end of the current-to-voltage unit, and an output end and a control end of the switching tube Mz are also connected to a voltage output end of the current-to-voltage unit; the type of the conversion tube Mz is the same as that of the gain control tube Mt, so that the influence caused by the process fluctuation of the device can be weakened; wherein the electron mobility of the gain control tube Mt and the conversion tube Mz can be mu 2 The capacitance values of the gate oxide layer of the unit area of the gain control tube Mt and the conversion tube Mz can be C ox2 The channel widths of the gain control tube Mt and the conversion tube Mz can be W 2 The channel lengths of the gain control tube Mt and the conversion tube Mz can be L 2 The threshold voltages of the gain control tube Mt and the conversion tube Mz can be V th2 . When the voltage acquisition unit controls the voltage of the input end of the conversion tube Mz to be the same as the voltage of the input end of the gain control tube Mt, the voltage acquisition unit comprises：
V gs2 =V gs3 =[2*I out /（μ 2 *C ox2 *W 2 /L 2 ）] 1/2 +V th3 ；V gs3 To convert the gate-source voltage of the tube Mz, V th3 Is the threshold voltage of the switching tube Mz.
The method can be summarized as follows:
Ron=[(μ 2 *C ox2 *W 2 /L 2 )*（V gs2 -V th2 ）] -1
={(μ 2 *C ox2 *W 2 /L 2 )*{[2*I out /（μ 2 *C ox2 *W 2 /L 2 ）] 1/2 +V th3 -V th2 }} -1
={(μ 2 *C ox2 *W 2 /L 2 )*{[2*a*I in /（μ 2 *C ox2 *W 2 /L 2 ）] 1/2 +V th3 -V th2 }} -1 。
example two
The second embodiment of the present invention is different from the first embodiment in that the connection mode of the N-type differential amplifier is different from that of the first embodiment in fig. 3. Specifically, in the second embodiment of the present invention, the N-type differential amplifier includes an NMOS tube NM1 and an NMOS tube NM2, where the NMOS tube NM1 and the NMOS tube NM2 have the same size and parameters, the gate of the NMOS tube NM1 is connected to the second input end of the N-type differential amplifier, the gate of the NMOS tube NM2 is connected to the first input end of the N-type differential amplifier, the drain of the NMOS tube NM1 is connected to the power supply end of the N-type differential amplifier, the drain of the NMOS tube NM2 is connected to the output end of the N-type differential amplifier, and the source of the NMOS tube NM1 and the source of the NMOS tube NM2 are connected to the ground end of the N-type differential amplifier.
In a second embodiment of the present invention, the voltage-controlled current source has the following characteristics:
when (V) b -ΔV)≤V T ≤(V b +Δv), then there are:
I in =I 0 =I S /2+1/2*(μ 1 *C ox1 *I S ) 1/2 *(V T -V b )*[1-(μ 1 *C ox1 *W 1 /L 1 )/(4*I S )*(V T -V b ) 2 ] 1/2 ；
when V is T ﹤(V b +Δv), then there are: i in =I 0 =0；
When V is T ＞(V b - Δv), then there are: i in =I 0 =I S ；
ΔV=[(2*I S )/(μ 1 *C ox1 *W 1 /L 1 )] 1/2 ；
I out =a*I in ；
When (V) b -ΔV)≤V T ≤(V b +Δv), and (V T -V b ) 2 Far less than (4*I) S )/(μ 1 *C ox1 *W 1 /L 1 ) When the method is used, the following steps are: i out =a*I in ≒a*[I S /2+(μ 1 *C ox1 *I S ) 1/2 *(V T -V b )/2]At this time, the regulation current signal is considered to vary approximately linearly with the temperature-voltage signal (the regulation current signal is positively correlated with the temperature-voltage signal).
Example III
The third embodiment of the present invention is different from the first embodiment in that the voltage-to-current unit of the voltage-controlled current source has a different structure, as shown in fig. 4.
In a third embodiment of the present invention, the voltage-to-current unit includes a P-type differential amplifier, a reference voltage circuit and a current source IS, a first input terminal of the P-type differential amplifier IS connected to an output terminal of the reference voltage circuit, a second input terminal of the P-type differential amplifier IS connected to an input terminal of the voltage-to-current unit, a power supply terminal of the P-type differential amplifier IS connected to a control power supply VCC through the current source IS, a ground of the P-type differential amplifier IS grounded, and an output terminal of the P-type differential amplifier IS connected to an output terminal of the voltage-to-current unit. The P-type differential amplifier comprises a PMOS tube PM1 and a PMOS tube PM2, the sizes and parameters of the PMOS tube PM1 and the PMOS tube PM2 are the same, a grid electrode of the PMOS tube PM1 is connected with a first input end of the P-type differential amplifier, a grid electrode of the PMOS tube PM2 is connected with a second input end of the P-type differential amplifier, a source electrode of the PMOS tube PM1 and a source electrode of the PMOS tube PM2 are connected with a power end of the P-type differential amplifier, a drain electrode of the PMOS tube PM1 is connected with a grounding end of the P-type differential amplifier, and a drain electrode of the PMOS tube PM2 is connected with an output end of the P-type differential amplifier. The reference voltage circuit comprises a resistor Rb1 and a resistor Rb2, wherein a first end of the resistor Rb1 is connected with a control power supply VCC, a second end of the resistor Rb1 and a first end of the resistor Rb2 are connected with an output end of the reference voltage circuit, and a second end of the resistor Rb2 is grounded.
In a third embodiment of the present invention, the voltage-controlled current source has the following characteristics:
when (V) b -ΔV)≤V T ≤(V b +Δv), then there are:
I in =I 0 =I S /2-1/2*(μ 4 *C ox4 *I S ) 1/2 *(V T -V b )*[1-(μ 4 *C ox4 *W 1 /L 1 )/(4*I S )*(V T -V b ) 2 ] 1/2 ；
when V is T ﹤(V b - Δv), then there are: i in =I 0 =I S ；
When V is T ＞(V b +Δv), then there are: i in =I 0 =0；
ΔV=[(2*I S )/(μ 1 *C ox4 *W 4 /L 4 )] 1/2 ；
I out =a*I in ；
Wherein mu 4 The electron mobility of the PMOS tube PM1 and the PMOS tube PM2, C ox4 The capacitance value W of the gate oxide layer of the unit area of the PMOS tube PM1 and the PMOS tube PM2 4 The channel widths L of the PMOS tube PM1 and the PMOS tube PM2 are 4 The channel lengths of the PMOS tube PM1 and the PMOS tube PM2 are determined.
In the third embodiment of the present invention, when (V b -ΔV)≤V T ≤(V b +Δv), and (V T -V b ) 2 Far less than (4*I) S )/(μ 4 *C ox4 *W 4 /L 4 ) When the method is used, the following steps are: i out =a*I in ≒a*[I S /2-(μ 4 *C ox4 *I S ) 1/2 *(V T -V b )/2]At this time, the regulation current signal is considered to change approximately linearly with the temperature voltage signal (the regulation current signal is inversely related to the temperature voltage signal), so that the voltage-controlled current source can be designed by designing the output voltage of the reference voltage circuit, the channel lengths and the channel widths of the PMOS transistors PM1 and PM2, the electron mobility of the PMOS transistors PM1 and PM2, and the capacitance value of the gate oxide layer per unit area, so that the regulation current signal changes approximately linearly with the temperature voltage signal.
Example IV
The fourth embodiment of the present invention is different from the third embodiment in that the P-type differential amplifier is connected in a different manner, as shown in fig. 5. Specifically, in the fourth embodiment of the present invention, the P-type differential amplifier includes a PMOS tube PM1 and a PMOS tube PM2, where the dimensions and parameters of the PMOS tube PM1 and the PMOS tube PM2 are the same, a gate of the PMOS tube PM1 is connected to the second input end of the P-type differential amplifier, a gate of the PMOS tube PM2 is connected to the first input end of the P-type differential amplifier, a source of the PMOS tube PM1 and a source of the PMOS tube PM2 are connected to the power supply end of the P-type differential amplifier, a drain of the PMOS tube PM1 is connected to the ground end of the P-type differential amplifier, and a drain of the PMOS tube PM2 is connected to the output end of the P-type differential amplifier.
In a fourth embodiment of the present invention, the voltage-controlled current source has the following characteristics:
when (V) b -ΔV)≤V T ≤(V b +Δv), then there are:
I in =I 0 =I S /2+1/2*(μ 4 *C ox4 *I S ) 1/2 *(V T -V b )*[1-(μ 4 *C ox4 *W 4 /L 4 )/(4*I S )*(V T -V b ) 2 ] 1/2
when V is T ﹤(V b +Δv), then there are: i in =I 0 =0；
When V is T ＞(V b - Δv), then there are: i in =I 0 =I S ；
ΔV=[(2*I S )/(μ 1 *C ox1 *W 1 /L 1 )] 1/2 ；
I out =a*I in ；
When (V) b -ΔV)≤V T ≤(V b +Δv), and (V T -V b ) 2 Far less than (4*I) S )/(μ 4 *C ox4 *W 4 /L 4 ) When the method is used, the following steps are: i out =a*I in ≒a*[I S /2+(μ 4 *C ox4 *I S ) 1/2 *(V T -V b )/2]At this time, the regulation current signal is considered to vary approximately linearly with the temperature-voltage signal (the regulation current signal is positively correlated with the temperature-voltage signal).
Example five
In conjunction with fig. 6, the fifth embodiment of the present invention is different from the first to the fourth embodiments in that the number of voltage-to-current units of the voltage-controlled current source is different.
In a fifth embodiment of the present invention, the voltage-controlled current source includes a current mirror and at least two voltage-to-current units, and the number of the voltage-to-current units may be three; the input end of each voltage-to-current unit is connected with the voltage input end of the voltage-controlled current source, the output end of each voltage-to-current unit is connected with the input end of the current mirror, the output end of the current mirror is connected with the current output end of the voltage-controlled current source, the voltage input end of the voltage-controlled current source is connected with the temperature voltage signal, and the current output end of the voltage-controlled current source outputs the regulation current signal.
In a fifth embodiment of the present invention, the input current of the current mirror of the voltage-controlled current source of the fifth embodiment of the present invention is the sum of the output currents of the respective voltage-to-current units. The voltage-to-current unit of the fifth embodiment of the present invention may have the same structure as any one of the first to fourth embodiments, and parameters of the tubes of each of the fifth embodiment of the present invention may be the same or different.
Example six
In conjunction with fig. 7, in a sixth embodiment of the present invention, an output end detected by the temperature detecting unit is connected to a voltage input end of a voltage-controlled current source, a current output end of the voltage-controlled current source is connected to a current input end of a current-to-voltage unit, and a voltage output end of the current-to-voltage unit is connected to a gain regulation end of the variable gain amplifier. The output end of the temperature detection unit outputs a temperature voltage signal, the voltage input end of the voltage-controlled current source is connected with the temperature voltage signal, the current output end of the voltage-controlled current source outputs a regulating current signal, the current input end of the current-to-voltage unit is connected with the regulating current signal, the voltage output end of the current-to-voltage unit outputs a regulating voltage signal, and the gain regulating end of the variable gain amplifier is connected with the regulating voltage signal.
In a sixth embodiment of the present invention, the variable gain amplifier may include a differential amplifier U1 and a gain control tube Mt ', where the gain control tube Mt ' is an NMOS tube, a first output end of the differential amplifier U1 and an input end of the gain control tube Mt ' are connected to a first output end of the variable gain amplifier, a second output end of the differential amplifier U1 and an output end of the gain control tube Mt ' are connected to a second output end of the variable gain amplifier, a control end of the gain control tube Mt ' is connected to a gain control end of the variable gain amplifier, and a gain control end of the variable gain amplifier is connected to a control voltage signal. The current-to-voltage unit comprises a voltage acquisition unit and a conversion tube Mz ', the type of the conversion tube Mz' is the same as that of the gain regulation tube Mt ', two voltage acquisition ends of the voltage acquisition unit are respectively connected with a first output end and a second output end of the variable gain amplifier, a voltage control end of the voltage acquisition unit is connected with an output end of the conversion tube Mz', an input end and a control end of the conversion tube Mz 'are connected with a current input end of the current-to-voltage unit, and an input end and a control end of the conversion tube Mz' are also connected with a voltage output end of the current-to-voltage unit; the current input end of the current-to-voltage unit is connected with the regulating current signal, and the voltage output end of the current-to-voltage unit outputs the regulating voltage signal. The principle of the variable gain amplifier and the current-to-voltage unit in the sixth embodiment of the present invention is similar to that of the embodiment, and will not be explained here.
In a sixth embodiment of the present invention, the voltage-controlled current source includes a current mirror and a voltage-to-current unit; the voltage-to-current unit is used for converting the temperature voltage signal into a temperature current signal, the current mirror is used for mirror image copying the temperature current signal to obtain a regulating current signal, and the current mirror enables the regulating current signal not to fluctuate due to circuit interference. Because the gain control tube Mt 'and the conversion tube Mz' are NMOS tubes, the current mirror adopts a P-type current mirror. The current mirror and the voltage-to-current unit of the voltage-controlled current source in the sixth embodiment of the present invention may specifically be the current mirror and the voltage-to-current unit of the voltage-controlled current source disclosed in the first to fifth embodiments.
The above examples and drawings are not intended to limit the form or form of the present invention, and any suitable variations or modifications thereof by those skilled in the art should be construed as not departing from the scope of the present invention.

Claims (11)

1. A gain self-adaptive temperature regulation circuit is characterized in that: the device comprises a temperature detection unit, a voltage-controlled current source, a current-to-voltage unit and a variable gain amplifier which are connected in sequence;
the temperature detection unit detects the temperature of the variable gain amplifier and generates a corresponding temperature voltage signal;
the voltage-controlled current source generates a corresponding regulation current signal according to the temperature voltage signal, and the regulation current signal changes approximately linearly along with the temperature voltage signal; the voltage-controlled current source comprises a current mirror and at least one voltage-to-current unit, the input end of each voltage-to-current unit is connected with the voltage input end of the voltage-controlled current source, the output end of each voltage-to-current unit is connected with the input end of the current mirror, the output end of the current mirror is connected with the current output end of the voltage-controlled current source, the voltage input end of the voltage-controlled current source is connected with a temperature voltage signal, and the current output end of the voltage-controlled current source outputs a regulation current signal;
the current-to-voltage unit generates a corresponding regulation voltage signal according to the regulation current signal;
the variable gain amplifier correspondingly regulates the link gain of the variable gain amplifier according to the regulating voltage signal, so that the total gain of the variable gain amplifier is kept dynamically stable along with the temperature change.
2. A gain-adaptive temperature regulation circuit according to claim 1 wherein: the temperature detection unit has a positive temperature coefficient or a negative temperature coefficient.
3. A gain-adaptive temperature regulation circuit according to claim 1 wherein: each voltage-to-current unit comprises an N-type differential amplifier, a reference voltage circuit and a current source IS, wherein a first input end of the N-type differential amplifier IS connected with an input end of the voltage-to-current unit, a second input end of the N-type differential amplifier IS connected with an output end of the reference voltage circuit, a power end of the N-type differential amplifier IS connected with a control power supply VCC, a grounding end of the N-type differential amplifier IS grounded through the current source IS, and an output end of the N-type differential amplifier IS connected with an output end of the voltage-to-current unit.
4. A gain-adaptive temperature regulation circuit according to claim 3 wherein: the N-type differential amplifier comprises an NMOS tube NM1 and an NMOS tube NM2, the sizes and parameters of the NMOS tube NM1 and the NMOS tube NM2 are the same, the grid electrode of the NMOS tube NM1 and the grid electrode of the NMOS tube NM2 are respectively connected with the first input end and the second input end of the N-type differential amplifier, or the grid electrode of the NMOS tube NM1 and the grid electrode of the NMOS tube NM2 are respectively connected with the second input end and the first input end of the N-type differential amplifier, the drain electrode of the NMOS tube NM1 is connected with the power end of the N-type differential amplifier, the drain electrode of the NMOS tube NM2 is connected with the output end of the N-type differential amplifier, and the source electrode of the NMOS tube NM1 and the source electrode of the NMOS tube NM2 are connected with the grounding end of the N-type differential amplifier.
5. A gain-adaptive temperature regulation circuit according to claim 1 wherein: each voltage-to-current unit comprises a P-type differential amplifier, a reference voltage circuit and a current source IS, wherein a first input end of the P-type differential amplifier IS connected with an output end of the reference voltage circuit, a second input end of the P-type differential amplifier IS connected with an input end of the voltage-to-current unit, a power end of the P-type differential amplifier IS connected with a control power VCC through the current source IS, a grounding end of the P-type differential amplifier IS grounded, and an output end of the P-type differential amplifier IS connected with an output end of the voltage-to-current unit.
6. The gain-adaptive temperature regulation circuit of claim 5 wherein: the P-type differential amplifier comprises a PMOS tube PM1 and a PMOS tube PM2, the sizes and parameters of the PMOS tube PM1 and the PMOS tube PM2 are the same, the grid electrode of the PMOS tube PM1 and the grid electrode of the PMOS tube PM2 are respectively connected with the first input end and the second input end of the P-type differential amplifier, or the grid electrode of the PMOS tube PM1 and the grid electrode of the PMOS tube PM2 are respectively connected with the second input end and the first input end of the P-type differential amplifier, the source electrode of the PMOS tube PM1 and the source electrode of the PMOS tube PM2 are connected with the power end of the P-type differential amplifier, the drain electrode of the PMOS tube PM1 is connected with the ground end of the P-type differential amplifier, and the drain electrode of the PMOS tube PM2 is connected with the output end of the P-type differential amplifier.
7. A gain-adaptive temperature regulating circuit according to any one of claims 3 to 6, wherein: the reference voltage circuit comprises a resistor Rb1 and a resistor Rb2, wherein a first end of the resistor Rb1 is connected with a control power supply VCC, a second end of the resistor Rb1 and a first end of the resistor Rb2 are connected with an output end of the reference voltage circuit, and a second end of the resistor Rb2 is grounded.
8. A gain-adaptive temperature regulation circuit according to claim 1 wherein: the variable gain amplifier comprises a differential amplifier U1 and a gain control tube Mt, the gain control tube Mt is a PMOS tube, a first output end of the differential amplifier U1 and an input end of the gain control tube Mt are connected with a first output end of the variable gain amplifier, a second output end of the differential amplifier U1 and an output end of the gain control tube Mt are connected with a second output end of the variable gain amplifier, a control end of the gain control tube Mt is connected with a gain control end of the variable gain amplifier, and a gain control end of the variable gain amplifier is connected with a control voltage signal.
9. The gain-adaptive temperature regulation circuit of claim 8 wherein: the current-to-voltage conversion unit comprises a voltage acquisition unit and a conversion tube Mz, the type of the conversion tube Mz is the same as that of the gain regulation tube Mt, two voltage acquisition ends of the voltage acquisition unit are respectively connected with a first output end and a second output end of the variable gain amplifier, a voltage control end of the voltage acquisition unit is connected with an input end of the conversion tube Mz, an output end and a control end of the conversion tube Mz are connected with a current input end of the current-to-voltage conversion unit, and an output end and a control end of the conversion tube Mz are also connected with a voltage output end of the current-to-voltage conversion unit; the current input end of the current-to-voltage unit is connected with the regulating current signal, and the voltage output end of the current-to-voltage unit outputs the regulating voltage signal.
10. A gain-adaptive temperature regulation circuit according to claim 1 wherein: the variable gain amplifier comprises a differential amplifier U1 and a gain control tube Mt ', the gain control tube Mt ' is an NMOS tube, a first output end of the differential amplifier U1 and an input end of the gain control tube Mt ' are connected with a first output end of the variable gain amplifier, a second output end of the differential amplifier U1 and an output end of the gain control tube Mt ' are connected with a second output end of the variable gain amplifier, a control end of the gain control tube Mt ' is connected with a gain control end of the variable gain amplifier, and a gain control end of the variable gain amplifier is connected with a control voltage signal.
11. The gain-adaptive temperature regulation circuit of claim 10 wherein: the current-to-voltage unit comprises a voltage acquisition unit and a conversion tube Mz ', the type of the conversion tube Mz' is the same as that of the gain regulation tube Mt ', two voltage acquisition ends of the voltage acquisition unit are respectively connected with a first output end and a second output end of the variable gain amplifier, a voltage control end of the voltage acquisition unit is connected with an output end of the conversion tube Mz', an input end and a control end of the conversion tube Mz 'are connected with a current input end of the current-to-voltage unit, and an input end and a control end of the conversion tube Mz' are also connected with a voltage output end of the current-to-voltage unit; the current input end of the current-to-voltage unit is connected with the regulating current signal, and the voltage output end of the current-to-voltage unit outputs the regulating voltage signal.
CN202311629497.9A 2023-12-01 2023-12-01 Gain self-adaptive temperature regulation and control circuit Pending CN117335763A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101123419A (en) * 2007-08-08 2008-02-13 中国科学院电子学研究所 Automatic control method for RF amplifier gain based on varying electrical bridge principle
CN101242161A (en) * 2008-03-14 2008-08-13 华东师范大学 Programmable gain amplifier
CN101630944A (en) * 2008-07-17 2010-01-20 联咏科技股份有限公司 Driving circuit capable of promoting response speed and related method thereof
CN110808717A (en) * 2018-08-06 2020-02-18 锐迪科创微电子（北京）有限公司 Power supply compensation current mode control radio frequency power amplifier
CN110995169A (en) * 2019-11-29 2020-04-10 浙江大学 On-chip variable gain temperature compensation amplifier
CN116137512A (en) * 2021-11-17 2023-05-19 深圳市中兴微电子技术有限公司 Variable gain amplifier and transmitting device
US20230291372A1 (en) * 2022-03-09 2023-09-14 Nf Holdings Corporation Amplifier circuit with variable temperature coefficient of gain, and circuit for generating voltage with variable temperature coefficient, which becomes reference potential at reference temperature, direct voltage generating circuit, and circuit for compensating for temperature drift of another amplifier circuit, which use the amplifier circuit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101123419A (en) * 2007-08-08 2008-02-13 中国科学院电子学研究所 Automatic control method for RF amplifier gain based on varying electrical bridge principle
CN101242161A (en) * 2008-03-14 2008-08-13 华东师范大学 Programmable gain amplifier
CN101630944A (en) * 2008-07-17 2010-01-20 联咏科技股份有限公司 Driving circuit capable of promoting response speed and related method thereof
CN110808717A (en) * 2018-08-06 2020-02-18 锐迪科创微电子（北京）有限公司 Power supply compensation current mode control radio frequency power amplifier
CN110995169A (en) * 2019-11-29 2020-04-10 浙江大学 On-chip variable gain temperature compensation amplifier
CN116137512A (en) * 2021-11-17 2023-05-19 深圳市中兴微电子技术有限公司 Variable gain amplifier and transmitting device
US20230291372A1 (en) * 2022-03-09 2023-09-14 Nf Holdings Corporation Amplifier circuit with variable temperature coefficient of gain, and circuit for generating voltage with variable temperature coefficient, which becomes reference potential at reference temperature, direct voltage generating circuit, and circuit for compensating for temperature drift of another amplifier circuit, which use the amplifier circuit

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