CN117334766A - 一种4H-SiC COMS紫外反相器及其制备方法 - Google Patents

一种4H-SiC COMS紫外反相器及其制备方法 Download PDF

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CN117334766A
CN117334766A CN202311482081.9A CN202311482081A CN117334766A CN 117334766 A CN117334766 A CN 117334766A CN 202311482081 A CN202311482081 A CN 202311482081A CN 117334766 A CN117334766 A CN 117334766A
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杜丰羽
韩超
周瑜
袁昊
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Wuhu Xijing Microelectronics Technology Co ltd
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Abstract

本发明公开了一种4H‑SiC COMS紫外反相器，该反相器包括n型4H‑SiC外延层，其左侧注入有P离子，以形成p阱区，同时在右侧形成n阱区；栅氧层，位于外延层的下方，并向两侧延伸至部分p阱区和部分n阱区下面；n型源极和p型源，分别位于n阱区和p阱区的下方；栅电极，沿栅氧层的下表面向上延伸至栅氧层内；电极Pad，位于n型源极、p型源极以及栅氧层的下方；紫外感光层，设置在外延层的上表面两端；n型漏极和p型漏极，分别位于n阱区和p阱区上方；若干减反陷光结构，等间隔排布在n型漏极和p型漏极上。该器件结构简单，对工艺要求较低，无需额外的电流处理设备即可直接完成信号输出，降低了对后续的电信号处理要求高。

Description

一种4H-SiC COMS紫外反相器及其制备方法
技术领域
本发明属于微电子技术领域，具体涉及一种4H-SiC COMS紫外反相器及其制备方法。
背景技术
光电探测器是利用光电效应，把光学辐射转化成电学信号的器件。光电效应可分为外光电效应和内光电效应。在外光电效应中，光子激发光阴极产生光电子，然后被外电极收集，获得的光信号(电流等)是接收到的辐射转换值。外光电效应器件通常指光敏电真空器件，主要用于紫外、红外和近红外等波段。紫外探测器就是作用于紫外波段的光电效应器件。
随着微电子技术的发展，与高温紫外成像设备相关的紫外探测器在工业领域以及深空探测、行星探测，甚至后续载人登月等相关领域有着重要的作用。作为高温应用的优秀代表，4H-SiC相关紫外探测技术备受关注，尤其是片上集成图像传感器。
目前，现有的片上集成图像传感器大多使用二极管结构并串联双极性晶体管进行像素化。然而，由于双管串联的结构设计使得现有器件对工艺要求较高，且信号A/D转化过程中噪声大、易失真，对后续的电信号处理要求高，不适用于恶劣的工作环境。
发明内容
为了解决现有技术中存在的上述问题，本发明提供了一种4H-SiC COMS紫外反相器及其制备方法。本发明要解决的技术问题通过以下技术方案实现：
第一方面，本发明提供了一种4H-SiC COMS紫外反相器，包括电极Pad、栅电极、栅氧层、n型源极、p型源极、n型4H-SiC外延层、紫外感光层、n型漏极、p型漏极以及若干减反陷光结构；其中，
所述n型4H-SiC外延层的左侧注入有P离子，以形成p阱区，同时在所述n型4H-SiC外延层的右侧形成n阱区；
所述栅氧层位于所述n型4H-SiC外延层的下方，并向两侧延伸至部分所述p阱区和部分所述n阱区下面；
所述n型源极和所述位于所述n阱区的下方，所述p型源极位于所述p阱区的下方；所述n型源极和所述p型源极分别紧挨所述栅氧层的左右两侧设置，且厚度与所述栅氧层的厚度相同；
所述栅电极沿所述栅氧层的下表面向上延伸至所述栅氧层内；
所述电极Pad位于所述n型源极、所述p型源极以及所述栅氧层的下方；
所述紫外感光层包括两部分，分别设置在所述n型4H-SiC外延层的上表面两端，并向中间延伸至覆盖部分所述p阱区和部分所述n阱区；
所述n型漏极位于所述n阱区上方，并全部覆盖所述n阱区上的紫外感光层；
所述p型漏极位于所述p阱区上方，并全部覆盖所述p阱区上的紫外感光层；
所述若干减反陷光结构等间隔排布在所述n型漏极和所述p型漏极上。
第二方面，本发明提供了一种4H-SiC COMS紫外反相器的制备方法，用以制备本发明第一方面提供的4H-SiC COMS紫外反相器，该方法主要包括以下步骤：
制备n型4H-SiC外延层；
在所述n型4H-SiC外延层左侧进行P离子注入以形成p阱区，同时在所述n型4H-SiC外延层的右侧形成n阱区；
在所述n型4H-SiC外延层下表面制备栅氧层，并在所述栅氧层内制备栅电极；
在所述栅氧层两侧制备源接触，以形成n型源极和p型源极；
在所述n型4H-SiC外延层的上表面制备紫外感光层；
在所述紫外感光层上制备漏接触，以形成n型漏极和p型漏极；
在所述n型源极、所述p型源极以及所述栅氧层的下面制备电极Pad；
在所述n型漏极和所述p型漏极上制备减反陷光结构，从而制备得到4H-SiC COMS紫外反相器。
本发明的有益效果：
1、本发明提供的4H-SiC COMS紫外反相器设计了包括p阱区和n阱区的n型4H-SiC外延层，外延层的下方设有栅氧层，栅氧层内设有栅电极，n阱区和p阱区的下方对应设有n型源极和p型源，n型源极、p型源极以及栅氧层的下方设有电极Pad，外延层的上表面两端设有紫外感光层，n阱区和p阱区上方对应设有n型漏极和p型漏极，n型漏极和p型漏极上等间隔设置有若干减反陷光结构。该器件结构简单，无需额外的电流处理设备即可直接完成信号输出，降低了对后续的电信号处理要求高，且损耗较低；此外，该结构设计对工艺要求较低，可采用沟槽刻蚀并配合常规减薄工艺即可实现，工艺成熟可靠，沟槽的设计使得器件的光电性能大大提升，整体器件可靠性强，适合工作于恶劣环境；
2、本发明提供的4H-SiC COMS紫外反相器的制备方法基于4H-SiC工艺实现，且对材料的掺杂浓度等工艺要求较低，实现过程简单。利用该方法制备得到的器件高温性能好、天然可见光屏蔽，无需额外的散热冷却设备。
以下将结合附图及实施例对本发明做进一步详细说明。
附图说明
图1是本发明实施例提供的一种4H-SiC COMS紫外反相器的结构示意图；
图2是本发明实施例提供的一种4H-SiC COMS紫外反相器制备方法的流程示意图；
图3a-3j是本发明实施例提供的一种4H-SiC COMS紫外反相器制备过程的工艺流程图；
附图标记说明：
1-厚Al电极Pad，2-栅电极，3-poly Si栅氧层，4-n型源极，5-p型源极，6-n型4H-SiC外延层，61-n阱区，62-p阱区，7-紫外感光层，8-n型漏极，9-p型漏极，10-减反陷光结构。
具体实施方式
下面结合具体实施例对本发明做进一步详细的描述，但本发明的实施方式不限于此。
实施例一
请参见图1，图1是本发明实施例提供的一种4H-SiC COMS紫外反相器的结构示意图。本发明提供的4H-SiC COMS紫外反相器包括电极Pad1、栅电极2、栅氧层3、n型源极4、p型源极5、n型4H-SiC外延层6、紫外感光层7、n型漏极8、p型漏极9以及若干减反陷光结构10；其中，
n型4H-SiC外延层6的左侧注入有P离子，以形成p阱区61，同时在n型4H-SiC外延层6的右侧形成n阱区62；
栅氧层3位于n型4H-SiC外延层6的下方，并向两侧延伸至部分p阱区61和部分n阱区62下面；
n型源极4位于n阱区62的下方，p型源极5位于p阱区61的下方，n型源极4和p型源极5分别紧挨栅氧层3的左右两侧设置，且厚度与栅氧层3的厚度相同；
栅电极2沿栅氧层3的下表面向上延伸至栅氧层3内；
电极Pad1位于n型源极4、p型源极5以及栅氧层3的下方；
紫外感光层7包括两部分，分别设置在n型4H-SiC外延层6的上表面两端，并覆盖部分p阱区61和部分n阱区62；
n型漏极8位于n阱区62上方，并全部覆盖n阱区62上的紫外感光层7；
p型漏极9位于p阱区61上方，并全部覆盖p阱区61上的紫外感光层7；
若干减反陷光结构10等间隔排布在n型漏极8和p型漏极9上。
可选的，作为一种实现方式，电极Pad1采用厚Al电极；栅电极2采用poly Si栅电极；n型源极4、p型源极5、n型漏极8以及p型漏极9均采用Ni金属。
紫外感光层7可以为五氧化二钽Ta2O5减反层和二氧化硅SiO2减反层依次重叠形成的复合结构，其中，单层Ta2O5减反层和单层SiO2减反层的厚度均为10nm，紫外感光层7的总厚度控制在70～80nm。
在本实施例中，n型4H-SiC外延层6的厚度为5～6μm。
进一步的，减反陷光结构10的形状可以采用金字塔状、圆锥状、圆柱状、圆孔状、半球状或其他形状，大小和间距可根据实际情况进行调整。
可选的，作为一种实现方式，减反陷光结构10的材料可以选用氧化硅，并通过刻蚀形成。
此外，减反陷光结构10还可以为通过湿法刻蚀形成的蛾眼结构。
本发明在器件顶部设计了减反陷光结构，减少了光的反射，并在局部形成了量子光场以增强光场强，从而提升了器件的光利用率。
可以理解的是，本实施例提供的4H-SiC COMS紫外反相器中电极材料、紫外感光层材料以及减反陷光结构的材料均可以采用其他材料替换，本实施例对此不做限定。
本发明提供的4H-SiC COMS紫外反相器设计了包括p阱区和n阱区的n型4H-SiC外延层，外延层的下方设有栅氧层，栅氧层内设有栅电极，n阱区和p阱区的下方对应设有n型源极和p型源，n型源极、p型源极以及栅氧层的下方设有电极Pad，外延层的上表面两端设有紫外感光层，n阱区和p阱区上方对应设有n型漏极和p型漏极，n型漏极和p型漏极上等间隔设置有若干减反陷光结构。该器件结构简单，无需额外的电流处理设备即可直接完成信号输出，降低了对后续的电信号处理要求高，且损耗较低。
此外，该结构设计对工艺要求较低，可采用沟槽刻蚀并配合常规减薄工艺实现，工艺成熟可靠，沟槽的设计使得器件的光电性能大大提升，整体器件可靠性强，适合工作于恶劣环境。
实施例二
本实施例提供了一种4H-SiC COMS紫外反相器制备方法，用以制备上述实施例一提供的4H-SiC COMS紫外反相器。请参见图2，图2是本发明实施例提供的一种4H-SiC COMS紫外反相器制备方法的流程示意图。本实施例提供的一种4H-SiC COMS紫外反相器制备方法主要包括以下步骤：
步骤1：制备n型4H-SiC外延层；
步骤2：在n型4H-SiC外延层左侧进行P离子注入以形成p阱区，同时在n型4H-SiC外延层的右侧形成n阱区；
步骤3：在n型4H-SiC外延层下表面制备栅氧层，并在栅氧层内制备栅电极；
步骤4：在栅氧层两侧制备源接触，以形成n型源极和p型源极；
步骤5：在n型4H-SiC外延层的上表面制备紫外感光层；
步骤6：在紫外感光层上制备漏接触，以形成n型漏极和p型漏极；
步骤7：在n型源极、p型源极以及栅氧层的下面制备电极Pad；
步骤8：在n型漏极和p型漏极上制备减反陷光结构，从而制备得到4H-SiC COMS紫外反相器。
本实施例提供的制备方法基于4H-SiC工艺实现，且对材料的掺杂浓度等工艺要求较低，实现过程简单。利用该方法制备得到的器件高温性能好、可靠性高，且天然屏蔽可见光，无需额外的散热冷却设备，适用于高温等恶劣的工作环境。
下面结合图3a-3j所示的工艺过程对本实施例提供的制备方法进行详细介绍。
1、制备n型4H-SiC外延层6。
具体的，可利用CVD工艺，在生长温度为1600℃～1900℃的环境下，生长厚度为5～6μm的n型4H-SiC外延层6，如图3a所示。
2、制备p阱区61和n阱区62。
具体的，在n型4H-SiC外延层6的左侧进行p离子注入形成p阱区61，并使用CMP工艺进行减薄，同时n型4H-SiC外延层的右侧形成n阱区62，如图3b所示。
3、制备栅氧层3以及栅电极2。
首先，将第2步得到的样品翻转过来，将其底面朝上。
然后，使用干氧氧化工艺在n型4H-SiC外延层6上制备栅氧层3；其中，栅氧层3覆盖部分p阱区61和部分n阱区62，如图3c所示。
接着，使用光刻以及LPCVD工艺在栅氧层3内淀积poly Si栅电极2，如图3d所示。
4、制备n型源极4和p型源极5。
具体的，首先，使用电子束蒸发工艺与快速热退火工艺在栅氧层3两侧的4H-SiC外延层6上制备源接触。其中，源接触采用Ni金属。
然后，使用Ni腐蚀液洗去多余的Ni金属，从而形成n型源极4和p型源极5，如图3e所示。
5、制备紫外感光层7。
首先，将第4步得到的样品翻转，以使p阱区61和n阱区62朝上，如图3f所示。
然后，可通过磁控溅射工艺在p阱区61和n阱区62上面依次生长五氧化二钽Ta2O5减反层和二氧化硅SiO2减反层，以形成叠层复合结构的紫外感光层7，如图3g所示。
其中，单层Ta2O5减反层和单层SiO2减反层的厚度均为10nm，紫外感光层7的总厚度控制在70～80nm。
6、制备n型漏极8和p型漏极9。
具体的，使用电子束蒸发工艺与快速热退火工艺在第6步得到的样品表面制备漏接触，从而形成n型漏极8和p型漏极9，如图3h所示。其中，漏接触使用Ni金属。
7、制备电极Pad 1。
将第6步得到的样品翻转，并使用磁控溅射工艺制备厚Al电极Pad1，如图3i所示。
8、制备减反陷光结构10。
具体的，将第7步得到的样品翻转，使用使用纳米压印，并配合干法或者湿法刻蚀工艺在n型漏极8和p型漏极9上形成等间隔排布的若干减反陷光结构10，如图3j所示。
至此，完成了4H-SiC COMS紫外反相器的制备。
需要说明的是，本实施例提供的制备方法中涉及的CVD工艺、CMP工艺、干氧氧化工艺、光刻工艺、LPCVD工艺、电子束蒸发工艺、快速热退火工艺、腐蚀液腐蚀工艺以及磁控溅射工艺等的具体实现过程均可参考现有的相关技术实现，本实施对此不做详细介绍。
利用上述方法制备得到的器件高温性能好、可靠性高，且天然可见光屏蔽，无需额外的散热冷却设备，适用于高温等恶劣的工作环境。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。此外，本领域的技术人员可以将本说明书中描述的不同实施例或示例进行接合和组合。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。

Claims (7)

1.一种4H-SiC COMS紫外反相器，其特征在于，包括电极Pad(1)、栅电极(2)、栅氧层(3)、n型源极(4)、p型源极(5)、n型4H-SiC外延层(6)、紫外感光层(7)、n型漏极(8)、p型漏极(9)以及若干减反陷光结构(10)；其中，
所述n型4H-SiC外延层(6)的左侧注入有P离子，以形成p阱区(61)，同时在所述n型4H-SiC外延层(6)的右侧形成n阱区(62)；
所述栅氧层(3)位于所述n型4H-SiC外延层(6)的下方，并向两侧延伸至部分所述p阱区(61)和部分所述n阱区(62)下面；
所述n型源极(4)和所述位于所述n阱区(62)的下方，所述p型源极(5)位于所述p阱区(61)的下方；所述n型源极(4)和所述p型源极(5)分别紧挨所述栅氧层(3)的左右两侧设置，且厚度与所述栅氧层(3)的厚度相同；
所述栅电极(2)沿所述栅氧层(3)的下表面向上延伸至所述栅氧层(3)内；
所述电极Pad(1)位于所述n型源极(4)、所述p型源极(5)以及所述栅氧层(3)的下方；
所述紫外感光层(7)包括两部分，分别设置在所述n型4H-SiC外延层(6)的上表面两端，并向中间延伸至覆盖部分所述p阱区(61)和部分所述n阱区(62)；
所述n型漏极(8)位于所述n阱区(62)上方，并全部覆盖所述n阱区(62)上的紫外感光层(7)；
所述p型漏极(9)位于所述p阱区(61)上方，并全部覆盖所述p阱区(61)上的紫外感光层(7)；
所述若干减反陷光结构(10)等间隔排布在所述n型漏极(8)和所述p型漏极(9)上。
2.根据权利要求1所述的一种4H-SiC COMS紫外反相器，其特征在于，所述电极Pad(1)为厚Al电极。
3.根据权利要求1所述的一种4H-SiC COMS紫外反相器，其特征在于，所述栅电极(2)采用poly Si栅电极。
4.根据权利要求1所述的一种4H-SiC COMS紫外反相器，其特征在于，所述n型源极(4)、所述p型源极(5)、所述n型漏极(8)以及所述p型漏极(9)均采用Ni金属。
5.根据权利要求1所述的一种4H-SiC COMS紫外反相器，其特征在于，所述n型4H-SiC外延层(6)的厚度为5～6μm。
6.根据权利要求1所述的一种4H-SiC COMS紫外反相器，其特征在于，所述减反陷光结构(10)的形状为金字塔状、圆锥状、圆柱状、圆孔状或者半球状。
7.一种4H-SiC COMS紫外反相器的制备方法，用以制备权利要求1-6任一项所述的4H-SiC COMS紫外反相器，其特征在于，包括以下步骤：
制备n型4H-SiC外延层；
在所述n型4H-SiC外延层左侧进行P离子注入以形成p阱区，同时在所述n型4H-SiC外延层的右侧形成n阱区；
在所述n型4H-SiC外延层下表面制备栅氧层，并在所述栅氧层内制备栅电极；
在所述栅氧层两侧制备源接触，以形成n型源极和p型源极；
在所述n型4H-SiC外延层的上表面制备紫外感光层；
在所述紫外感光层上制备漏接触，以形成n型漏极和p型漏极；
在所述n型源极、所述p型源极以及所述栅氧层的下面制备电极Pad；
在所述n型漏极和所述p型漏极上制备减反陷光结构，从而制备得到4H-SiC COMS紫外反相器。
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