CN117334569A - Method for manufacturing chip - Google Patents
Method for manufacturing chip Download PDFInfo
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- CN117334569A CN117334569A CN202310749828.6A CN202310749828A CN117334569A CN 117334569 A CN117334569 A CN 117334569A CN 202310749828 A CN202310749828 A CN 202310749828A CN 117334569 A CN117334569 A CN 117334569A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000002679 ablation Methods 0.000 claims abstract description 42
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 239000011148 porous material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 128
- 239000000758 substrate Substances 0.000 description 47
- 230000004075 alteration Effects 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010897 surface acoustic wave method Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
The invention provides a method for manufacturing chips, which can reliably divide a wafer with a film and can improve the productivity. A method for manufacturing a chip, which is to divide a wafer having a film formed on the back surface along a line to divide, and manufacture the chip, the method comprising the steps of: a laser beam irradiation step of irradiating a laser beam along a dividing line set in the wafer, forming a burn mark on a film formed on the back surface, and forming a modified region in the wafer; and a dividing step of applying an external force to the wafer after the laser beam irradiation step is performed, and dividing the wafer along the ablation mark formed by the laser beam irradiation step.
Description
Technical Field
The present invention relates to a method for manufacturing a chip.
Background
Will be made on sapphire (Al 2 O 3 ) Substrate, silicon carbide (SiC) substrate, optical device wafer with optical device layer laminated on front surface of gallium nitride (GaN) substrate, or lithium tantalate (LiTaO) 3 ) Substrate, lithium niobate (LiNbO) 3 ) Substrate, silicon carbide (SiC) substrate, diamond substrate,SAW (surface acoustic wave) devices are formed on the front surface of a quartz substrate, and SAW wafers or the like are cut along a plurality of intersecting lines to be cut into individual devices to manufacture chips.
As a method for dividing the wafer, the following laser processing method is known: a pulse laser beam having a wavelength that is transparent to a wafer is used, a light-condensing point is positioned inside a region to be divided, the pulse laser beam is irradiated to form a modified layer as a dividing start point, and an external force is applied to divide the modified layer (for example, refer to patent document 1).
The method disclosed in patent document 1 is applicable to a wafer in which a metal film or a DBR (Distributed Bragg Reflector: distributed bragg reflector) film is laminated on the back surface of the wafer, and the laminated film is also divided by cracks generated from the modified layer when the wafer is processed.
However, in recent years, for the purpose of improving brightness and the like, there is a tendency that the film thickness becomes thick, and the following problems are caused therewith: cracks are difficult to spread and poor division and edge chipping occur.
Therefore, a method of removing the laminated film by a cutting tool or etching and then performing laser processing has been proposed (for example, see patent literature 2).
Patent document 1: japanese patent No. 3408805
Patent document 2: japanese patent laid-open publication 2016-164924
The above problems can be solved by using the processing method disclosed in patent document 2, but further improvement in productivity is demanded.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a method for manufacturing chips, which can reliably divide a wafer with a film and can improve productivity.
According to the present invention, there is provided a method for manufacturing a chip by dividing a wafer having a film formed on a front surface or a back surface thereof along a plurality of intersecting predetermined dividing lines, the method comprising the steps of: a laser beam irradiation step of irradiating a laser beam along the dividing line set in the wafer, forming an etching mark on the film formed on the front surface or the back surface, and forming a modified region in the wafer; and a dividing step of applying an external force to the wafer after the laser beam irradiation step is performed, and dividing the wafer along the ablation formed by the laser beam irradiation step.
Preferably, in the laser beam irradiation step, a condensed region of the laser beam having a wavelength that is transparent to the wafer and absorptive to the film is positioned from the inside of the wafer to the front surface of the film or to the outside of the front surface, and the laser beam is irradiated along a predetermined dividing line set in the wafer, so that an etching mark is formed on the film simultaneously with the formation of the modified region in the inside of the wafer.
Preferably, the laser beam irradiation step includes the steps of: a modified region forming step of forming a modified region by positioning a condensed region of a laser beam having a wavelength that is transparent to the wafer inside the wafer; and an ablation mark forming step of forming ablation marks by positioning a condensed region of the laser beam having a wavelength that is absorptive to the film in the vicinity of the film after the modified region forming step is performed.
Preferably, in the laser beam irradiation step, the modified region formed in the wafer includes pores and an amorphous state surrounding the pores.
The invention has the following effects: the wafer with the film can be reliably divided and productivity can be improved.
Drawings
Fig. 1 is a perspective view schematically showing a wafer to be processed, which is a method for manufacturing a chip according to embodiment 1.
Fig. 2 is a cross-sectional view schematically showing the wafer shown in fig. 1.
Fig. 3 is a flowchart showing a flow of the method for manufacturing the chip according to embodiment 1.
Fig. 4 is a perspective view schematically showing a laser beam irradiation step of the manufacturing method of the chip shown in fig. 3.
Fig. 5 is a cross-sectional view schematically showing a main portion of a wafer irradiated with a laser beam in a laser beam irradiation step of the manufacturing method of a chip shown in fig. 3.
Fig. 6 is a cross-sectional view schematically showing another example of the main portion of the wafer shown in fig. 5.
Fig. 7 is a perspective view schematically showing a main portion of a wafer after a laser beam irradiation step of the manufacturing method of the chip shown in fig. 3.
Fig. 8 is a cross-sectional view schematically showing a main portion of a wafer after a laser beam irradiation step of the manufacturing method of the chip shown in fig. 3.
Fig. 9 is a perspective view schematically showing a modified region formed in the wafer shown in fig. 8.
Fig. 10 is a side view schematically showing, in partial cross section, a state in which a wafer is held by a dicing apparatus in a dicing step of the method of manufacturing a chip shown in fig. 3.
Fig. 11 is a side view schematically showing, in partial cross section, a state in which a wafer is divided into chips by a dividing apparatus in a dividing step of the method for manufacturing chips shown in fig. 3.
Fig. 12 is a plan view schematically showing a chip divided in a dividing step of the method for manufacturing a chip shown in fig. 3.
Fig. 13 is a flowchart showing a flow of a method for manufacturing a chip according to embodiment 2.
Fig. 14 is a cross-sectional view schematically showing a main portion of a wafer irradiated with a laser beam in a modified region forming step of the laser beam irradiation step of the manufacturing method of a chip shown in fig. 13.
Fig. 15 is a cross-sectional view schematically showing a main portion of the wafer after the modified region forming step of the laser beam irradiation step of the method for manufacturing a chip shown in fig. 13.
Fig. 16 is a cross-sectional view schematically showing a main portion of a wafer irradiated with a laser beam in an ablation mark forming step of the laser beam irradiation step of the manufacturing method of a chip shown in fig. 13.
Fig. 17 is a cross-sectional view schematically showing a main portion of the wafer after an ablation mark formation step of the laser beam irradiation step of the manufacturing method of the chip shown in fig. 13.
Description of the reference numerals
1: a wafer; 3: a back surface; 4: a membrane; 5: a front face; 6: 1 st division scheduled line (division scheduled line); 7: the 2 nd division scheduled line (division scheduled line); 9: a front face; 10: a chip; 11: etching; 12: a modified region; 12-2: a modified layer (modified region); 21: a laser beam; 101: a laser beam irradiation step; 101-1: a modified region forming step; 101-2: an ablation mark forming step; 102: a segmentation step; 121: fine pores; 122: an amorphous state; 211: a light condensing region; 211-2: a condensing point (condensing region).
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the following embodiments. The following components include those that can be easily understood by those skilled in the art and those that are substantially the same. The structures described below can be appropriately combined. Various omissions, substitutions and changes in the structure may be made without departing from the spirit of the invention.
[ embodiment 1 ]
A method for manufacturing a chip according to embodiment 1 of the present invention will be described with reference to the drawings. Fig. 1 is a perspective view schematically showing a wafer to be processed, which is a method for manufacturing a chip according to embodiment 1. Fig. 2 is a cross-sectional view schematically showing the wafer shown in fig. 1. Fig. 3 is a flowchart showing a flow of the method for manufacturing the chip according to embodiment 1.
The method for manufacturing a chip according to embodiment 1 is a method for processing a wafer 1 shown in fig. 1. As shown in fig. 1 and 2, a wafer 1 to be processed in the method for manufacturing a chip according to embodiment 1 is a wafer such as a disk-shaped optical device wafer or a SAW (Surface Acoustic Wave: surface elastic wave) wafer in which a film 4 such as a metal film or a DBR (Distributed Bragg Reflector: distributed bragg reflector) film is formed on a back surface 3 of a substrate 2 to have a uniform thickness.
The optical device wafer is made of sapphire (Al 2 O 3 ) A substrate, a silicon carbide (SiC) substrate,A wafer having an optical device layer laminated on the front surface of a gallium nitride (GaN) substrate, wherein the SAW wafer is a wafer made of lithium tantalate (LiTaO 3 ) Substrate, lithium niobate (LiNbO) 3 ) A wafer having SAW devices formed on the front surface of a substrate, a silicon carbide (SiC) substrate, a diamond substrate, or a quartz substrate.
The wafer 1 has a device 8 formed in a region of the front surface 5 of the substrate 2, the region being divided by the 1 st division line 6 and the 2 nd division line 7 which are parallel to each other, and a film 4 formed on the back surface 3 of the substrate 2. In embodiment 1, the 1 st line 6 and the 2 nd line 7 are perpendicular to each other.
In embodiment 1, the substrate 2 of the wafer 1 is made of C-plane sapphire, and the device 8 formed on the front surface 5 of the substrate 2 is an LED (Light-Emitting Diode) including an epitaxial film formed by epitaxial film formation of GaN. In embodiment 1, in order to improve the brightness, the wafer 1 is provided with a PSS (Patterned Sapphire Substrate: patterned sapphire substrate) structure at the interface between the LED device 8 and the substrate 2.
In embodiment 1, the film 4 of the wafer 1 formed on the back surface 3 of the substrate 2 is a DBR film (dielectric multilayer film). In embodiment 1, the wafer 1 has an outer diameter of 6 inches, a thickness of 150 μm, and the devices 8 have a size of 200 μm×200 μm. The wafer 1 having the above-described structure is divided into chips 10 along the lines 6 and 7. In addition, the chip 10 has a part of the substrate 2, a part of the device 8 and the film 4.
The method for manufacturing a chip according to embodiment 1 is a method for manufacturing a chip 10 by dividing a wafer 1 having a film 4 formed on a back surface 3 of a substrate 2 along lines 6 and 7 to be divided. As shown in fig. 3, the method for manufacturing a chip according to embodiment 1 includes a laser beam irradiation step 101 and a dividing step 102.
(laser Beam irradiation step)
Fig. 4 is a perspective view schematically showing a laser beam irradiation step of the manufacturing method of the chip shown in fig. 3. Fig. 5 is a cross-sectional view schematically showing a main portion of a wafer irradiated with a laser beam in a laser beam irradiation step of the manufacturing method of a chip shown in fig. 3. Fig. 6 is a cross-sectional view schematically showing another example of the main portion of the wafer shown in fig. 5. Fig. 7 is a perspective view schematically showing a main portion of a wafer after a laser beam irradiation step of the manufacturing method of the chip shown in fig. 3. Fig. 8 is a cross-sectional view schematically showing a main portion of a wafer after a laser beam irradiation step of the manufacturing method of the chip shown in fig. 3. Fig. 9 is a perspective view schematically showing a modified region formed in the wafer shown in fig. 8.
The laser beam irradiation step 101 is a step of: a laser beam 21 is irradiated along lines 6 and 7 set in the wafer 1 (as shown in fig. 4, 5 and 6), an ablation 11 is formed on the film 4 formed on the back surface 3 (as shown in fig. 7 and 8), and a modified region 12 is formed inside the substrate 2 of the wafer 1 (as shown in fig. 7, 8 and 9). In addition, since the wafer 1 is provided with a PSS structure at the interface between the device 8 as an LED and the substrate 2 in order to improve the brightness, the laser beam 21 is scattered, and it is difficult to irradiate the laser beam 21 from the front surface 5 side.
In the laser beam irradiation step 101, as shown in fig. 4, the laser processing apparatus 20 suctions and holds the front surface 5 side of the wafer 1 on the holding surface 23 of the holding table 22. In embodiment 1, a disk-shaped tape 13 (shown in fig. 10) having a larger diameter than the wafer 1 is attached to the front surface 5 side of the wafer 1, and an annular frame 14 (shown in fig. 10) is attached to the outer edge portion of the tape 13, so that the front surface 5 side is held by suction on the holding surface 23 through the tape 13. In fig. 4, the belt 13 and the ring frame 14 are omitted.
In embodiment 1, in the laser beam irradiation step 101, the laser processing apparatus 20 performs alignment of the laser beam irradiation unit 25 with the lines 6 and 7 by capturing an image of the back surface 3 side of the wafer 1 held by the holding table 22 by suction with the infrared camera 24 or the like, detecting the lines 6 and 7, and the like. In embodiment 1, in the laser beam irradiation step 101, the laser processing apparatus 20 irradiates the laser beam 21 having a wavelength that is transparent to the substrate 2 of the wafer 1 and absorptive to the film 4 from the laser beam 21 toward the wafer 1 while relatively moving the laser beam irradiation unit 25 and the wafer 1 along the lines 6, 7 according to the processing conditions, as shown in fig. 4.
In embodiment 1, in a laser beam irradiation step 101, as shown in fig. 5, the laser processing apparatus 20 irradiates a laser beam 21 to which aberration (particularly, longitudinal aberration) is applied by an optical system of the laser beam irradiation unit 25 by converging the laser beam 21 inside the wafer 1. In embodiment 1, in the laser beam irradiation step 101, as shown in fig. 5, the laser processing apparatus 20 positions a condensed region 211 of the laser beam 21 (a region where the laser beam 21 to which aberration, particularly longitudinal aberration, is applied is condensed) between the front surface 9 of the film 4 and the inside of the substrate 2 of the wafer 1, and irradiates the laser beam 21 along the lines 6 and 7 set in the wafer 1. In the present invention, in the laser beam irradiation step 101, the laser processing apparatus 20 may irradiate the laser beam 21 along the lines 6 and 7 set in the wafer 1 between the position where the condensed region 211 of the laser beam 21 reaches the outside of the laser beam irradiation unit 25 from the inside of the substrate 2 of the wafer 1 to the front surface 9 of the film 4, as shown in fig. 6.
In embodiment 1, in the laser beam irradiation step 101, since the laser beam 21 has a wavelength that is transparent to the wafer 1 and absorptive to the film 4 and is given an aberration (in particular, longitudinal aberration), the laser processing apparatus 20 forms the modified region 12 along the lines 6 and 7 to be divided and forms the ablation mark 11 on the front surface 9 of the film 4 at intervals in the substrate 2 of the wafer 1, as shown in fig. 7 and 8. In embodiment 1, since aberration is imparted to the laser beam 21, the modified region 12 is formed linearly in the thickness direction of the wafer 1 as shown in fig. 7 and 8.
In embodiment 1, as shown in fig. 9, the modified region 12 includes pores 121 having a circular planar shape and a cylindrical amorphous 122 surrounding the pores 121. The pores 121 are pores (spaces) formed in the substrate 2, and in embodiment 1, the diameter of the pores 121 is about 1 μm. The amorphous 122 is a region in which density, refractive index, mechanical strength, or other physical properties are different from those of the surrounding region, and examples thereof include a melt processing region, a fracture region, a dielectric breakdown region, a refractive index change region, and a region in which these regions are mixed, and in embodiment 1, the amorphous 122 has an outer diameter of about 5 μm. The mechanical strength of the modified region 12 is lower than that of the other portions of the substrate 2.
The ablation mark 11 is a mark formed by performing ablation processing on the film 4, and is a recess recessed from the front surface 9 of the film 4 in embodiment 1. In embodiment 1, the planar shape of the ablation mark 11 is a circle.
In embodiment 1, in the laser beam irradiation step 101, the laser beam 21 having a wavelength of 1064nm, an energy of 40 μj, and a repetition frequency of 40kHz is irradiated to the wafer 1 while moving the holding table 22 at 800 m/s. In addition, the energy of the laser beam 21, the repetition frequency, and the moving speed of the holding table 22 are the processing conditions of the laser beam irradiation step 101. That is, in embodiment 1, in the laser beam irradiation step 101, the processing conditions of the laser processing device 20 when the laser beam 21 is irradiated to the 1 st division line 6 are equal to the processing conditions of the laser beam 21 is irradiated to the 2 nd division line 7. In embodiment 1, in the laser beam irradiation step 101, the laser beam 21 is irradiated along all the lines 6 and 7 to be divided of the wafer 1, and the modified region 12 and the ablation mark 11 are formed along all the lines 6 and 7 to be divided of the wafer 1.
(dividing step)
Fig. 10 is a side view schematically showing, in partial cross section, a state in which a wafer is held by a dicing apparatus in a dicing step of the method of manufacturing a chip shown in fig. 3. Fig. 11 is a side view schematically showing, in partial cross section, a state in which a wafer is divided into chips by a dividing apparatus in a dividing step of the method for manufacturing chips shown in fig. 3. Fig. 12 is a plan view schematically showing a chip divided in a dividing step of the method for manufacturing a chip shown in fig. 3. In addition, the device 8 is omitted in fig. 10 and 11.
The dividing step 102 is a step of applying an external force to the wafer 1 after the laser beam irradiation step 101 is performed, thereby dividing the wafer 1 into individual chips 10 along the modified region 12 and the ablation mark 11 formed by the laser beam irradiation step 101. In the dividing step 102, as shown in fig. 10, the dividing apparatus 30 holds the ring frame 14 having the wafer 1 supported inside and the outer edge portion of the belt 13 by sandwiching the outer edge portion between the frame sandwiching portions 31, and brings the rolling member 33 provided at the upper end of the cylindrical expansion drum 32 into contact with the belt 13.
In this way, in the dividing step 102, as shown in fig. 10, the dividing apparatus 30 holds the ring frame 14 or the like supporting the wafer 1 by the frame clamping portion 31 in a state where the belt 13 is flat over the outer edge portion and the central portion. In the dividing step 102, the dividing apparatus 30 relatively moves the ring frame 14 and the wafer 1 in a direction intersecting (perpendicular in embodiment 1) the front surface 5 of the wafer 1. In embodiment 1, in the dividing step 102, the dividing device 30 moves the ring frame 14 and the wafer 1 relatively in a direction intersecting (perpendicular to, in embodiment 1) the front surface 5 of the wafer 1 as shown in fig. 11 by raising the expansion drum 32.
Then, the rolling member 33 presses the wafer 1 from the lower side to the upper side between the outer edge of the tape 13 and the inner edge of the ring frame 14, and the tape 13 spreads in the planar direction. As a result of the expansion of the belt 13, a tensile force acts radially on the belt 13. When a stretching force radially acts on the tape 13 attached to the front surface 5 side of the wafer 1, since the wafer 1 is formed with the modified region 12 and the ablation mark 11 along the lines 6 and 7 to be divided, the substrate 2 is divided starting from the modified region 12 and the film 4 is divided starting from the ablation mark 11, and the wafer 1 is divided into the chips 10 shown in fig. 12 along the lines 6 and 7 to be divided. The individually divided chips 10 shown in fig. 12 are picked up from the tape 13. In embodiment 1, as shown in fig. 12, a plurality of semicircular concave portions 15 are formed on the outer edge of each of the chips 10 divided one by forming the etching 11 and the modified region 12 on the wafer 1.
In the method for manufacturing a chip according to embodiment 1 described above, in the laser beam irradiation step 101, the laser beam 21 is irradiated along the lines 6 and 7 to be divided of the wafer 1, the laminated film 4 is subjected to ablation processing to form the ablation mark 11, and the modified region 12 is formed in the substrate 2 of the wafer 1. Therefore, in the method for manufacturing a chip according to embodiment 1, since the etching 11 is formed on the film 4 laminated on the substrate 2 of the wafer 1, even if the crack from the modified region 12 does not smoothly extend to the film 4 in the dividing step 102, the etching 11 becomes a start point of division, and the wafer 1 can be reliably divided into the individual chips 10 while suppressing meandering or chipping.
In the method for manufacturing a chip according to embodiment 1, in the laser beam irradiation step 101, the laser beam 21 is irradiated along the lines 6 and 7 to be divided of the wafer 1, the laminated film 4 is subjected to ablation processing to form the ablation mark 11, and the modified region 12 is formed in the substrate 2 of the wafer 1, so that the number of steps for removing the film 4 on the lines 6 and 7 to be divided in advance can be reduced, contributing to improvement in productivity.
As a result, the method for manufacturing a chip according to embodiment 1 has the following effects: the wafer 1 with the film 4 can be reliably divided into individual chips 10, and productivity can be improved.
[ embodiment 2 ]
A method for manufacturing a chip according to embodiment 2 will be described with reference to the accompanying drawings. Fig. 13 is a flowchart showing a flow of a method for manufacturing a chip according to embodiment 2. Fig. 14 is a cross-sectional view schematically showing a main portion of a wafer irradiated with a laser beam in a modified region forming step of the laser beam irradiation step of the manufacturing method of a chip shown in fig. 13. Fig. 15 is a cross-sectional view schematically showing a main portion of the wafer after the modified region forming step of the laser beam irradiation step of the method for manufacturing a chip shown in fig. 13. Fig. 16 is a cross-sectional view schematically showing a main portion of a wafer irradiated with a laser beam in an ablation mark forming step of the laser beam irradiation step of the manufacturing method of a chip shown in fig. 13. Fig. 17 is a cross-sectional view schematically showing a main portion of the wafer after an ablation mark formation step of the laser beam irradiation step of the manufacturing method of the chip shown in fig. 13. In fig. 13, 14, 15, 16 and 17, the same reference numerals are given to the same parts as those in embodiment 1, and the description thereof is omitted.
The method for manufacturing a chip according to embodiment 2 is the same as embodiment 1 except that the laser beam irradiation step 101 includes a modified region forming step 101-1 and an ablation mark forming step 101-2.
In embodiment 2, the modified region forming step 101-1 is a step of forming a modified layer 12-2 (shown in fig. 14) as a modified region by positioning a condensed region, i.e., a condensed point 211-2 (shown in fig. 14) of a laser beam 21 having a wavelength that is transparent to the wafer 1, inside the substrate 2 of the wafer 1. In embodiment 2, in the modified region forming step 101-1, the laser processing apparatus 20 sucks and holds the front surface 5 side of the wafer 1 on the holding surface 23 of the holding table 22, and performs alignment, as in embodiment 1, while relatively moving the laser beam irradiation unit 25 and the wafer 1 along the lines 6 and 7 to be divided according to the processing conditions, irradiates the laser beam 21 having a wavelength that is transparent to the wafer 1 and absorbing to the film 4 from the laser beam 21 toward the wafer 1.
In embodiment 2, in the modified region forming step 101-1, as shown in fig. 14, the laser processing apparatus 20 irradiates the substrate 2 of the wafer 1 with the condensed point 211-2 of the laser beam 21 while setting the condensed point within the substrate without imparting an aberration (particularly, longitudinal aberration) to the optical system of the laser beam irradiation unit 25. In embodiment 2, in the modified region forming step 101-1, since the laser beam 21 has a wavelength having transparency to the wafer 1, the laser processing apparatus 20 forms the modified layer 12-2 in the substrate 2 of the wafer 1 at intervals along the lines 6 and 7 to be divided as shown in fig. 15.
The modified layer 12-2 is a region in which density, refractive index, mechanical strength, and other physical properties are different from those of the surrounding region, and examples thereof include a melt-processed region, a fracture region, an insulation-broken region, a refractive index change region, and a region in which the regions are mixed. The mechanical strength of the modified layer 12-2 is lower than that of other portions of the substrate 2. In the modified region forming step 101-1, the laser beam 21 is irradiated along all the lines 6 and 7 to be divided of the wafer 1, and the modified layer 12-2 is formed along all the lines 6 and 7 to be divided of the wafer 1.
In embodiment 2, the ablation mark formation step 101-2 is a step of forming the ablation mark 11 by positioning the converging point 211-2, which is a converging region of the laser beam 21 having a wavelength that is absorptive to the film 4, in the vicinity of the front surface 9 of the film 4 after the modified region formation step 101-1 is performed. In embodiment 2, in the ablation mark forming step 101-2, the laser beam 21 having a wavelength that is transparent to the wafer 1 and absorptive to the film 4 is irradiated from the laser beam 21 toward the wafer 1 while relatively moving the laser beam irradiation unit 25 and the wafer 1 along the lines 6, 7 to be divided according to the processing conditions.
In embodiment 2, in the ablation mark forming step 101-2, as shown in fig. 16, the laser processing apparatus 20 irradiates the front surface 9 of the film 4 with the converging point 211-2 of the laser beam 21 without imparting an aberration (particularly, a longitudinal aberration) by the optical system of the laser beam irradiation unit 25. In embodiment 2, in the ablation mark formation step 101-2, since the laser beam 21 has a wavelength that is absorptive to the film 4, the laser processing apparatus 20 forms ablation marks 11 on the front surface 9 of the film 4 of the wafer 1 at intervals along the lines 6 and 7 to be divided as shown in fig. 17. In the ablation mark forming step 101-2, the laser beam 21 is irradiated along all the lines 6, 7 to be divided of the wafer 1, and the ablation mark 11 is formed along all the lines 6, 7 to be divided of the wafer 1.
In embodiment 2, the modified layer 12-2 and the ablation mark 11 are formed by irradiating the modified region forming step 101-1 and the ablation mark forming step 101-2 with a laser beam 21 having the same wavelength (1064 nm in embodiment 2), but in the present invention, the modified layer 12-2 and the ablation mark 11 may be formed by irradiating the modified region forming step 101-1 and the ablation mark forming step 101-2 with a laser beam 21 having a different wavelength. In this case, it is preferable that the laser beam 21 having a wavelength of 1064nm is irradiated in the modified region forming step 101-1, and the laser beam 21 having a wavelength of 355nm is irradiated in the ablation mark forming step 101-2.
In the present invention, in particular, in the modified region forming step 101-1, the modified region 12 may be formed in the substrate 2 of the wafer 1 by irradiating the laser beam 21 to which aberration (in particular, longitudinal aberration) is applied, as in embodiment 1. In the present invention, in the modified region forming step 101-1, the converging point 211-2 of the laser beam 21 may be positioned inside the substrate 2 or on the laser beam irradiation unit 25 side of the front surface 9 of the film 4 with respect to the front surface 9 of the film 4, and the converging point 211-2 may be positioned in the vicinity of the front surface 9 of the film 4. In addition, "the condensed point 211-2 is positioned in the vicinity of the front surface 9 of the film 4" means that the condensed point is separated from the front surface 9 of the film 4 to such an extent that the ablation 11 can be formed on the front surface 9 of the film 4 by irradiation of the laser beam 21.
In the method for manufacturing a chip according to embodiment 2, in the laser beam irradiation step 101, laser beams 21 are irradiated along the lines 6 and 7 to be divided of the wafer 1, and the laminated film 4 is subjected to ablation processing to form the ablation mark 11, and the modified layer 12-2 is formed in the substrate 2 of the wafer 1. As a result, the method for manufacturing a chip according to embodiment 2 has the following effects as in embodiment 1: the wafer 1 with the film 4 can be reliably divided into individual chips 10, and productivity can be improved.
The present invention is not limited to the above embodiments. That is, the present invention can be variously modified and implemented within a range not departing from the gist of the present invention. For example, in the present invention, the processing conditions when the laser beam 21 is irradiated to the 1 st division line 6 may be equal to the processing conditions when the laser beam 21 is irradiated to the 2 nd division line 7, or the processing conditions may be different. In the embodiment, the film 4 is formed on the back surface 3 of the wafer 1, but in the present invention, the film 4 may be formed on the front surface 5.
Claims (4)
1. A method for manufacturing chips, in which a wafer having a film formed on the front or back side is divided along a plurality of intersecting lines to be divided to manufacture chips,
the manufacturing method of the chip comprises the following steps:
a laser beam irradiation step of irradiating a laser beam along the dividing line set in the wafer, forming an etching mark on the film formed on the front surface or the back surface, and forming a modified region in the wafer; and
and a dividing step of applying an external force to the wafer after the laser beam irradiation step is performed, and dividing the wafer along the ablation mark formed by the laser beam irradiation step.
2. The method for manufacturing a chip according to claim 1, wherein,
in the step of irradiating the laser beam,
a laser beam is irradiated along a predetermined dividing line set in the wafer by positioning a condensed region of the laser beam having a wavelength that is transparent to the wafer and absorptive to the film at a position from the inside of the wafer to the front surface of the film or to the outside of the front surface, thereby forming a burn mark on the film simultaneously with forming a modified region in the inside of the wafer.
3. The method for manufacturing a chip according to claim 1, wherein,
the laser beam irradiation step includes the steps of:
a modified region forming step of forming a modified region by positioning a condensed region of a laser beam having a wavelength that is transparent to the wafer inside the wafer; and
and an ablation mark forming step of forming an ablation mark by positioning a condensed region of the laser beam having a wavelength that is absorptive to the film in the vicinity of the film after the modified region forming step is performed.
4. The method for manufacturing a chip according to any one of claims 1 to 3, wherein,
in the step of irradiating the laser beam,
the modified region formed inside the wafer includes pores and an amorphous state surrounding the pores.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-106350 | 2022-06-30 | ||
| JP2022106350A JP2024005902A (en) | 2022-06-30 | 2022-06-30 | Chip manufacturing method |
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| CN117334569A true CN117334569A (en) | 2024-01-02 |
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| CN202310749828.6A Pending CN117334569A (en) | 2022-06-30 | 2023-06-25 | Method for manufacturing chip |
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|---|---|
| JP (1) | JP2024005902A (en) |
| KR (1) | KR20240002911A (en) |
| CN (1) | CN117334569A (en) |
| TW (1) | TW202403858A (en) |
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|---|---|---|---|---|
| JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
| JP6495056B2 (en) | 2015-03-06 | 2019-04-03 | 株式会社ディスコ | Single crystal substrate processing method |
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2022
- 2022-06-30 JP JP2022106350A patent/JP2024005902A/en active Pending
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2023
- 2023-05-26 KR KR1020230068111A patent/KR20240002911A/en unknown
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| JP2024005902A (en) | 2024-01-17 |
| TW202403858A (en) | 2024-01-16 |
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