CN117320522A - Photovoltaic cell preparation method and photovoltaic cell - Google Patents
Photovoltaic cell preparation method and photovoltaic cell Download PDFInfo
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention provides a photovoltaic cell preparation method and a photovoltaic cell, and relates to the field of photovoltaic. The preparation method of the photovoltaic cell comprises the following steps: acquiring shape, size and position information of a substrate; controlling printing equipment to prepare a photoelectric conversion layer according to the shape, the size and the position information of the acquired substrate; and performing pre-curing treatment on the photoelectric conversion layer. And transferring the pre-cured photoelectric conversion layer to the surface of the substrate according to the acquired shape, size and position information of the substrate. The preparation method of the photovoltaic cell can prepare the photovoltaic cell rapidly and with high flux, and can not cause the conditions of liquid leakage, substrate and pollution of production lines.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a photovoltaic cell preparation method and a photovoltaic cell.
Background
Perovskite solar cells are favored by researchers in their ultra-low cost fabrication processes, which exhibit suitable band gaps, high absorption coefficients, long charge mobilities, and long diffusion lengths, and which combine easy and low cost processing methods. Organic-inorganic lead halide Perovskite Solar Cells (PSCs) have attracted increasing attention over the past few years, and with the continued depth of research, efficiency has been greatly improved, the light-sensing band is wider, and weak light power generation can be achieved, so that they are considered as the most potential solar cells.
Perovskite solar cells are solar cells that utilize perovskite-type organometallic halide semiconductors as light absorbing materials. The development of perovskite solar cells internationally is still mainly in the laboratory stage. The development of flexible perovskite has focused on sheet research. The current methods for manufacturing the film comprise sputtering, vapor deposition, silk screen printing, spin coating, ink jet printing and other methods, wherein the sputtering and vapor deposition have high cost, the thickness and the precision of the silk screen printing are not well controlled, the spin coating is not suitable for mass production, and the coating and the ink jet printing can be suitable for mass industrial production with low cost, continuity and large area. Compared with coating, the thickness and position of the ink-jet printing are accurately controlled, the ink-jet printing has micron-sized resolution, the full-digital graphic output can be realized, and the processing process can be flexibly and highly accurately controlled through a computer. If the ink jet printing technology can be applied to the preparation process of the perovskite-based thin film solar cell, the method is more beneficial to the large-scale, continuous and low-cost industrial production of the perovskite-based thin film solar cell. However, when the perovskite-based thin film solar cell is prepared by using the existing ink-jet printing process, the quality of the printed thin film is poor, and the prepared perovskite-based thin film solar cell has low efficiency.
Particularly, the existing technology for directly ink-jet printing the perovskite layer on the surface of the substrate has the problems that the substrate and the production line are affected by ink dirt due to the fact that the ink layer cannot be cured in time, and cleaning is needed, so that the preparation efficiency is seriously affected.
Disclosure of Invention
The object of the present invention includes, for example, providing a photovoltaic cell manufacturing method and a photovoltaic cell which can avoid problems of leakage of liquid and fouling of substrates and production lines, and which can increase manufacturing efficiency.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides a method for preparing a photovoltaic cell, said method comprising:
acquiring shape, size and position information of a substrate for preparing a photovoltaic cell;
preparing a photoelectric conversion layer according to the shape, size and position information of the substrate, wherein the shape and size of the photoelectric conversion layer are the same as those of the substrate;
pre-curing the precursor film of the photoelectric conversion layer;
and transferring the pre-cured photoelectric conversion layer to the surface of the substrate according to the acquired shape, size and position information of the substrate.
In an alternative embodiment, the step of preparing a photoelectric conversion layer according to shape, size and position information of the substrate includes:
manufacturing a digital model of a photoelectric conversion layer of the substrate according to the shape, the size and the position information of the substrate, and preprocessing the digital model of the photoelectric conversion layer; wherein, the digital-analog of the photoelectric conversion layer is the same as the shape and the size of the substrate;
and preparing the photoelectric conversion layer on the flexible substrate according to the digital-analog of the photoelectric conversion layer.
In an alternative embodiment, the step of pre-curing the photoelectric conversion layer includes:
and heating the photoelectric conversion layer for a first preset time at a first preset temperature by utilizing an infrared heating mode.
In an alternative embodiment, the first preset temperature is within a range of 80 ℃ to 120 ℃, and the first preset time is within a range of 5min to 10min.
In an alternative embodiment, the base includes a substrate and a hole transport layer formed on a surface of the substrate;
the step of transferring the pre-cured photoelectric conversion layer to the surface of the substrate according to the shape, size and position information of the substrate includes:
attaching the photoelectric conversion layer corresponding to the substrate on the flexible substrate to the surface of the hole transport layer according to the shape, size and position information of the acquired substrate, and enabling the position of the pre-cured photoelectric conversion layer on the flexible substrate to correspond to the position of the hole transport layer;
heating the flexible substrate at a second preset temperature to desorb the photoelectric conversion layer;
applying a first preset pressure to the flexible substrate and maintaining a second preset time to enable the photoelectric conversion layer to be transferred to the surface of the hole transport layer.
In an alternative embodiment, the value range of the second preset temperature is 120 ℃ to 150 ℃, the heating rate of the second preset temperature is maintained at 10 ℃/min, the value range of the first preset pressure is 5kPa to 30kPa, and the value range of the second preset time is 5min to 20min.
In an alternative embodiment, the photoelectric conversion layer is a perovskite layer.
In a second aspect, the present application further provides a photovoltaic cell, where the photovoltaic cell includes a substrate and a photoelectric conversion layer, and the photoelectric conversion layer is formed on the surface of the substrate by the photovoltaic cell preparation method in any of the above optional embodiments;
the shape and the size of the photoelectric conversion layer are the same as the shape and the size of the substrate, and the photoelectric conversion layer is attached to the surface of the substrate and corresponds to the position of the substrate.
In an alternative embodiment, the base includes a substrate and a hole transport layer formed on the substrate; the photoelectric conversion layer is formed on the surface of one side, far away from the substrate, of the hole transport layer, and the photoelectric conversion layer is a perovskite layer.
In an alternative embodiment, an electron transport layer is formed on a side surface of the photoelectric conversion layer away from the substrate, and an electrode is formed on a side surface of the electron transport layer away from the substrate.
The photovoltaic cell preparation method and the photovoltaic cell provided by the embodiment of the invention have the beneficial effects that:
according to the method, the photoelectric conversion layer is prepared by acquiring the shape, the size and the position information of the substrate, the photoelectric conversion layer is subjected to pre-curing treatment, so that the photoelectric conversion layer is in a semi-dry state, the position, the shape and the size information of the substrate are utilized to transfer the photoelectric conversion layer to the surface of the substrate, the photoelectric conversion layer is prepared and formed in an area outside the substrate, and the photoelectric conversion layer is pre-cured to the semi-dry state during transfer, so that leakage and substrate pollution cannot be caused in a transfer mode. Secondly, the treatment of the substrate and the preparation of the photoelectric conversion layer can be carried out in two parallel production lines, so that the preparation efficiency can be improved. Secondly, the preparation of photoelectric conversion layers on substrates with different specifications and models can be simultaneously carried out.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a photovoltaic cell preparation method according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a photovoltaic cell manufacturing system employed in an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a photovoltaic cell according to an embodiment of the present invention.
Icon:
100-a photovoltaic cell preparation system; 110-a bearing table; 150-obtaining means; 170-printing equipment; 190-a transfer device;
300-photovoltaic cell; 310-substrate; 311-substrate; 313-hole transport layer; 330-a photoelectric conversion layer; 350-an electron transport layer; 370-electrode.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1 and 2, the present embodiment provides a method for manufacturing a photovoltaic cell 300 to manufacture a photoelectric conversion layer 330 on a substrate 310, thereby improving the manufacturing efficiency of the photovoltaic cell 300.
The method comprises the following steps:
s1, acquiring shape, size and position information of a substrate for preparing a photovoltaic cell;
generally, since the carrier device carries a plurality of substrates 310, the substrates 310 may have the same shape, size, or different shapes or sizes, and the placement positions of the substrates may also be different. The photoelectric conversion layer 330 can be conveniently prepared by acquiring the shape, size and position information of the substrate 310, and the accuracy of transfer at the time of post transfer can be made higher.
The outer contour of the substrate may be square, rectangular, or other shaped structures. The length and width of the substrate 310 specified by the size can be equal to the size on the horizontal projection plane, and the outline 1 of the substrate 310 can be drawn by reduction according to the size: 1. The position designation is the placement position of the substrate 310 on the carrier, and is generally determined according to preset coordinates. These parameters can be obtained by laser scanning or CCD photographing.
In some embodiments, the acquired shape, size and position information of the substrate 310 may be further processed by a data processor for reuse, and the acquired data may be processed by the data processor to make a printing program of the printing apparatus for transmission to the apparatus.
It is also possible that the acquired data image is acquired at a position, size, shape, etc. that is directly 1:1 is transmitted to the printing device for printing.
S2, preparing a photoelectric conversion layer 330 according to the shape, the size and the position information of the substrate 310, wherein the shape and the size of the photoelectric conversion layer are the same as those of the substrate;
typically this step is performed by the printing device 170, the printing device 170 being an inkjet printing device. The ink jet printer is filled with a liquid paste for preparing the photoelectric conversion layer 330, and the photoelectric conversion layer 330 can be directly formed after printing. And the photoelectric conversion layer 330 may be printed at a specific position according to the shape, size and position information, so that the later transfer may be facilitated.
The precursor composition of the perovskite printing ink for printing the photoelectric conversion layer is FAmCsnPbI1-xClx, and the main precursor material is FAI, csI, pbCl2 and PbI 2 MACl. Wherein the value of m is more than 80 percent and less than 100 percent, and the value of n is more than 0 and less than 20 percent; the value of x is more than 0 and less than 10 percent. The perovskite ink solvent comprises DMF, NMP, ACN, the blending proportion is about 50%<DMF<70％,5％<NMP<20％,10％<ACN<30％。
As a novel photoelectric semiconductor material, the metal halide perovskite shows excellent Photoelectric Conversion Efficiency (PCE) in solar cells, and also promotes the development of other application fields such as light emitting diodes and lasers. Whereas the APbX3 lead-based halide perovskite (where a=methylammonium MA, formamidine FA, or cesium; x=iodine and bromine) in the form of a single or polycrystalline thin film has unique optoelectronic properties comparable to the best single crystalline semiconductors. Related single crystal or polycrystalline thin films are typically prepared using salts containing only iodides and bromides (PbI 2, pbBr2, MAI, FAI, csI, MABr) as precursor materials.
The temperature of the ink jet printing is 20-150 ℃. For example, 20 ℃, 22 ℃, 25 ℃, 30 ℃, 35 ℃, 40 ℃, 50 ℃, 70 ℃, 85 ℃, 90 ℃, 100 ℃, 130 ℃, 150 ℃. Thus, the temperature of the ink-jet printing is in a proper range, and the poor effect of depositing halogen organic matters caused by too low or too high temperature of the ink-jet printing can be avoided.
Before printing, the computer automatically performs fluid simulation according to the viscosity characteristics of the solvent, and obtains the coverage area of a single droplet at the same time, so as to calculate the number of required inkjet heads. In the printing process, the system automatically derives two-dimensional data of the size of the substrate 310 at the corresponding position to perform accurate positioning printing. Typically, inkjet printers and printing inks specific to the perovskite layer may be used.
S3, performing pre-curing treatment on the precursor film of the photoelectric conversion layer 330;
the pre-curing treatment is performed on the photoelectric conversion layer 330, so that sizing of the slurry of the photoelectric conversion layer 330 can be realized, and fluidity of the slurry is lost, thereby avoiding liquid leakage and fouling of the substrate 310 and the production line.
Typically, the photoelectric conversion layer 330 is heated at a first preset temperature for a first preset time using infrared heating. The first preset temperature may be 80 ℃ to 150 ℃, for example: 80 ℃, 90 ℃, 120 ℃, 150 ℃. The first preset time may be 5-10min, such as 5min, 7min, 9min, and 10min. The use of infrared heating can avoid affecting the photoelectric conversion layer 330, which can accelerate volatilization and remove part of the organic solvent to form a semi-dry film.
Of course, in other embodiments of the present application, the printed photoelectric conversion layer 330 may also be baked in other ways. For example, the heating by a hot plate is not generally performed to promote drying of the slurry, and the shape of the photoelectric conversion layer 330 is changed due to the flow of the slurry caused by the air blowing.
In the next step, the photoelectric conversion layer 330 may be printed on the material of the flexible substrate 310, for example, a flexible transfer film, which has a certain adsorptivity compared with the smooth material of the substrate 310, so as to limit the fluidity of the inkjet paste. The shape and size of the photoelectric conversion layer 330 thus formed are more accurate.
And S4, transferring the pre-cured photoelectric conversion layer 330 to the surface of the substrate 310 according to the shape, size and position information of the acquired substrate 310.
Since the photoelectric conversion layer 330 is already in a semi-dry state during transfer, no leakage of liquid occurs, and the substrate 310 is stained, and the contact ratio is higher according to the shape, size and position information of the substrate 310.
As can be seen, the printing apparatus 170 of the present embodiment prepares the photoelectric conversion layer 330 according to the shape, size and position information of the substrate 310, and performs the pre-curing treatment on the photoelectric conversion layer 330, so that the printed photoelectric conversion layer 330 is in a semi-dry state, and transfers the photoelectric conversion layer 330 to the surface of the substrate 310 by using the position of the substrate 310, so that the formation of the photoelectric conversion layer 330 is prepared in a region other than the substrate 310, and the transfer manner does not pollute the substrate 310. Second, the processing of the substrate 310 and the preparation of the photoelectric conversion layer 330 may be performed in two parallel production lines, which may also improve the preparation efficiency. Next, the preparation of the photoelectric conversion layer 330 on the substrate 310 of different specification and model may also be performed simultaneously.
In this embodiment, the step S2 specifically includes the following sub-steps:
s21, manufacturing a digital-analog of the photoelectric conversion layer 330 of the substrate 310 according to the shape, the size and the position information of the substrate 310, and preprocessing the digital-analog of the photoelectric conversion layer 330; wherein, the digital-analog of the photoelectric conversion layer is the same as the shape and the size of the substrate;
for example, the obtained parameters are used to automatically draw the shape of the substrate 310 in drawing software, so as to obtain an outer contour model of the substrate 310, and then the drawn digital-analog is processed according to some printing parameters of the photoelectric conversion layer 330, so as to obtain a final model.
S22, preparing the photoelectric conversion layer 330 on the flexible substrate according to the digital-analog of the photoelectric conversion layer 330.
The preparation of the digital-analog can facilitate printing a plurality of the printing, can ensure the accuracy of the printing, and is convenient for demoulding when the printing is performed on the flexible substrate. The flexible substrate may be a flexible transfer film.
The data acquisition, printing, pre-curing and transfer are performed simultaneously, so that the production efficiency can be improved.
In this embodiment, the photoelectric conversion layer 330 is a perovskite layer. Of course, in other embodiments of the present application, the photoelectric conversion layer 330 may also be a perovskite material having a different band gap, for example, a perovskite material having a band gap of 1.25eV-2.0 eV. The present application does not limit the method to be used only for preparing perovskite batteries.
In this embodiment, step S4 includes:
s41, attaching the photoelectric conversion layer corresponding to the substrate on the flexible substrate to the surface of the hole transport layer 313 according to the shape, size and position information of the acquired substrate 310, and enabling the pre-cured photoelectric conversion layer 330 on the flexible substrate to correspond to the position of the hole transport layer 313;
s42, heating the flexible substrate at a second preset temperature to desorb the photoelectric conversion layer;
and S43, applying a first preset pressure to the flexible substrate and maintaining a second preset time to enable the photoelectric conversion layer to be transferred to the surface of the hole transport layer 313.
This allows the photoelectric conversion layer 330 to correspond to the substrate 310, and the thermal transfer does not damage the photoelectric conversion layer 330.
The thermal transfer printing is divided into transfer printing film printing and transfer printing processing, the transfer printing film printing adopts dot printing, and patterns are printed on the surface of the film in advance, so that the required effect of a designer of the patterns can be achieved, and the thermal transfer printing device is suitable for mass production. Transfer printing processing is carried out, the pattern on the transfer printing film is transferred on the surface of a product through primary processing of a thermal transfer printer, and the ink layer and the surface of the product are integrated after molding.
Specifically, the flexible substrate is pressed by the substrate to be closely attached to the substrate of the thermal transfer device 190, and the photoelectric conversion layer 330 is desorbed from the flexible substrate by heating and transferred to the substrate. S412, the photoelectric conversion layer 330 on the substrate corresponds to the position of the base 310 according to the shape, size and position information of the base 310, the base includes the substrate 311 and the hole transport layer 313 formed on the surface of the substrate 311, and the photoelectric conversion layer 330 is transferred to the surface of the hole transport layer 313 away from the substrate 311.
This can prevent the photoelectric conversion layer 330 from being damaged during thermal transfer, and can provide a flexible substrate from which the photoelectric conversion layer 330 is entirely detached.
The semi-dry photoelectric conversion layer obtained by pre-curing is transferred onto the silicon wafer substrate 310 by using a thermal transfer technology, and the main process is that the flexible substrate 310 film is positioned and attached to the corresponding silicon wafer substrate 310. At this time, the bottom substrate starts to be heated at 120-150 degrees. Notably, to prevent battery failure due to too fast a rate of temperature rise, the process heating rate may be, for example, 10 degrees/min. After the temperature reaches the preset temperature, the negative pressure system in the transfer chamber begins to operate, and the pressure generally needs to reach 5-30kPa, so that the substrates 310 can be tightly attached together during the transfer process. Under the dual action of temperature and pressure, the process generally needs to last for 5-20min, and the perovskite thin film can be directly transferred onto the silicon wafer substrate 310.
Secondly, it is generally necessary to detect the quality of the transfer after the transfer is completed to determine the complete transfer, remove the incomplete transfer and the defect, and then perform the subsequent operations.
The perovskite battery is prepared by the following steps:
and A1, depositing a hole transport layer 313 on the surface of the electrode 370 in a PVD or mode to form a substrate 310 nickel oxide serving as the hole transport layer 313, wherein the thickness is 10-20nm.
A2, performing thermal transfer on the surface of the hole transport layer 313 by adopting the embodiment mode to form a perovskite layer, wherein lead-iodine salt with a wide forbidden band is used as a perovskite absorption layer, and the thickness is 400-600nm.
A3, depositing an electron transport layer 350 on the surface of the perovskite absorption layer by adopting an ALD (atomic layer deposition) or evaporation, wherein tin oxide and C60 are used as the electron transport layer 350, the thickness of the tin oxide is 20-30nm, and the thickness of the C60 is 15-20nm.
A4, depositing the TCO electrode 370 on the surface of the side of the electron transport layer 350 away from the substrate 311 by PVD or RPD.
Because the transfer process belongs to the heating transfer process, the transferred film does not need to be subjected to an annealing process. The photovoltaic cell preparation system 100 for preparing the photovoltaic cell 300 is used to complete the preparation method provided in the above-described embodiments.
The photovoltaic cell preparation system 100 includes a carrier 110, an acquisition device 150, a printing apparatus 170, and a transfer apparatus 190. A stage 110 for supporting a substrate 310; which may be a platform or a conveyor belt with support. The acquisition device 150 is disposed above the stage 110 to acquire shape, size and position information of the substrate 310, wherein the position characterizes a position of the substrate 310 on the stage 110. The acquisition device 150 may be a laser positioning system, or an image acquisition system. The printing apparatus 170 is used to prepare a photoelectric conversion layer 330, which is typically an inkjet printing apparatus 170, according to the shape, size and position information of the substrate 310 acquired by the acquisition device 150. The transfer device 190, typically a thermal transfer device 190, is used to transfer the photoelectric conversion layer 330 to the surface of the substrate 310 according to the position acquired by the acquisition device 150.
In this embodiment, the photovoltaic cell preparation system 100 further comprises a pre-cure treatment apparatus. The pre-curing treatment device may heat the photoelectric conversion layer 330 using an infrared heating manner to pre-cure the photoelectric conversion layer 330.
Referring to fig. 3, next, the present embodiment further provides a photovoltaic cell 300, and the photovoltaic cell 300 is manufactured by the above method.
In this embodiment, the photovoltaic cell 300 is a perovskite photovoltaic cell. Perovskite solar cells are solar cells that utilize perovskite-type organometallic halide semiconductors as light absorbing materials.
This can improve the processing efficiency and yield of the photovoltaic cell 300.
In this embodiment, the photovoltaic cell 300 includes a substrate 310 and a photoelectric conversion layer 330, the substrate includes a substrate 311 and a hole transport layer 313 formed on the surface of the substrate 311, and the photoelectric conversion layer is formed on the surface of the substrate 310 by the method for manufacturing the photovoltaic cell 300 described in the above embodiment.
In this embodiment, the base 310 includes a substrate 311 and a hole transport layer 313 formed on the substrate 311; the photoelectric conversion layer is formed on a surface of the hole transport layer 313 away from the substrate 311, and the photoelectric conversion layer 330 is a perovskite layer.
In this embodiment, an electron transport layer 350 is formed on the surface of the photoelectric conversion layer, and an electrode 370 is formed on the surface of the electron transport layer 350. The electrode 370 and the substrate 311 are both TCO conductive glass in this embodiment.
The specific working principle is as follows: upon exposure to solar light, the perovskite layer first absorbs photons to generate electron-hole pairs. These carriers either become free carriers or form excitons due to the difference in exciton binding energy of the perovskite material. Moreover, because these perovskite materials tend to have lower carrier recombination probability and higher carrier mobility, the diffusion distance and lifetime of carriers are longer, and these uncomplexed electrons and holes are collected by the electron transport layer 350 and hole transport layer 313, respectively, i.e., electrons are transported from the perovskite layer to the electron transport layer 350 and finally absorbed by the partial electrode 370; holes are transported from the perovskite layer to the hole transport layer 313 and finally collected by another portion of the electrode.
In this embodiment, the photovoltaic cell 300 may be used alone to form a photovoltaic system for generating electricity, although in other embodiments of the present application, the photovoltaic cell 300 may also be used in a stack with a crystalline silicon cell to form a composite cell with a crystalline silicon cell as a bottom cell and a perovskite cell as a top cell to increase light conversion.
In summary, the photovoltaic cell preparation method and the photovoltaic cell provided by the embodiment of the invention have the beneficial effects that:
firstly, preparing a photoelectric conversion layer 330 on a flexible substrate according to the shape, size and position information of a substrate 310 in a transfer printing mode, and transferring the photoelectric conversion layer 330 to the surface of the substrate 310 by utilizing the position of the substrate 310, so that the photoelectric conversion layer 330 is formed in a preparation mode in a region except the substrate 310, and the substrate 310 is not polluted in the transfer printing mode, and can be rapidly prepared in a high flux mode; second, the processing of the substrate 310 and the preparation of the photoelectric conversion layer 330 may be performed in two parallel production lines, which may also improve the preparation efficiency. Next, the preparation of the photoelectric conversion layer 330 on the substrate 310 of different specification and model may also be performed simultaneously.
The present invention is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
1. A method of preparing a photovoltaic cell, the method comprising:
acquiring shape, size and position information of a substrate (310) for preparing a photovoltaic cell;
preparing a photoelectric conversion layer (330) according to shape, size and position information of the substrate (310), the shape and size of the photoelectric conversion layer being identical to those of the substrate;
pre-curing the precursor film of the photoelectric conversion layer (330);
the pre-cured photoelectric conversion layer (330) is transferred to the surface of the substrate (310) according to the shape, size and position information of the substrate (310).
2. The method of manufacturing a photovoltaic cell according to claim 1, wherein,
the step of preparing a photoelectric conversion layer (330) according to shape, size and position information of the substrate (310) includes:
manufacturing a digital-analog of a photoelectric conversion layer (330) of the substrate (310) according to the shape, the size and the position information of the substrate (310), and preprocessing the digital-analog of the photoelectric conversion layer (330); wherein, the digital-analog of the photoelectric conversion layer is the same as the shape and the size of the substrate;
the photoelectric conversion layer (330) is prepared on a flexible substrate according to the digital-analog of the photoelectric conversion layer (330).
3. The method of manufacturing a photovoltaic cell according to claim 1, characterized in that the step of pre-curing the photovoltaic conversion layer (330) comprises:
the photoelectric conversion layer (330) is heated at a first preset temperature for a first preset time by using an infrared heating mode.
4. A method of manufacturing a photovoltaic cell according to claim 3, wherein the first preset temperature is in the range of 80 ℃ to 120 ℃ and the first preset time is in the range of 5min to 10min.
5. The method of manufacturing a photovoltaic cell according to claim 2, characterized in that the base comprises a substrate (311) and a hole transport layer (313) formed on the surface of the substrate (311);
the step of transferring the pre-cured photoelectric conversion layer (330) to the surface of the substrate (310) according to the shape, size and position information of the substrate (310) includes: attaching the photoelectric conversion layer corresponding to the substrate on the flexible substrate to the surface of the hole transport layer (313) according to the shape, size and position information of the acquired substrate (310), and enabling the pre-cured photoelectric conversion layer (330) on the flexible substrate to correspond to the position of the hole transport layer (313);
heating the flexible substrate at a second preset temperature to desorb the photoelectric conversion layer;
applying a first preset pressure to the flexible substrate and maintaining a second preset time to enable the photoelectric conversion layer to be transferred to the surface of the hole transport layer (313).
6. The method of claim 5, wherein the second preset temperature is in a range of 120 ℃ to 150 ℃, the heating rate of the second preset temperature is maintained at 10 ℃/min, the first preset pressure is in a range of 5kPa to 30kPa, and the second preset time is in a range of 5min to 20min.
7. The method of any one of claims 1-6, wherein the photoelectric conversion layer (330) is a perovskite layer.
8. A photovoltaic cell, characterized in that it comprises a substrate (310) and a photoelectric conversion layer (330), said photoelectric conversion layer (330) being formed on the surface of said substrate (310) by the photovoltaic cell preparation method according to any one of claims 1 to 7;
the shape and the size of the photoelectric conversion layer are the same as those of the substrate, and the photoelectric conversion layer is attached to the surface of the substrate and corresponds to the position of the substrate.
9. The photovoltaic cell of claim 8, wherein the base (310) comprises a substrate (311) and a hole transport layer (313) formed on the substrate (311); the photoelectric conversion layer (330) is formed on the surface of one side of the hole transport layer (313) far away from the substrate (311), and the photoelectric conversion layer (330) is a perovskite layer.
10. The photovoltaic cell of claim 9, wherein an electron transport layer (350) is formed on a side surface of the photoelectric conversion layer (330) remote from the substrate (311), and an electrode (370) is formed on a side surface of the electron transport layer (350) remote from the substrate (311).
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