CN117316931A - Isolation capacitor and preparation method thereof - Google Patents

Isolation capacitor and preparation method thereof Download PDF

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Publication number
CN117316931A
CN117316931A CN202311610520.XA CN202311610520A CN117316931A CN 117316931 A CN117316931 A CN 117316931A CN 202311610520 A CN202311610520 A CN 202311610520A CN 117316931 A CN117316931 A CN 117316931A
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metal
insulating medium
holes
metal layer
forming
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CN117316931B (en
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赵东艳
邓永峰
陈燕宁
吴波
刘芳
王凯
李君建
郁文
张同
吴祖谋
章明瑞
董子斌
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Beijing Smartchip Microelectronics Technology Co Ltd
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Beijing Smartchip Microelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

The invention relates to the technical field of chips and discloses an isolation capacitor and a preparation method of the isolation capacitor. The isolation capacitor includes: a lower plate disposed on the substrate; the first insulating medium is arranged on the lower polar plate; the metal layer is arranged in the first insulating medium, wherein the edge of the metal layer is of a smooth curved surface structure, and the matching surface of the smooth curved surface structure and the metal layer is a tangent plane; and an upper electrode plate arranged on the first insulating medium, wherein the upper electrode plate is connected with the metal layer through a metal channel. The invention at least partially solves the problems of sharp angle at the metal end and side discharge of the upper polar plate of the isolation capacitor, introduces high voltage and strong electric field of the upper polar plate into the silicon dioxide body, and avoids the problem of device failure caused by breakdown at interfaces (easy breakdown points) of different dielectric layers.

Description

Isolation capacitor and preparation method thereof
Technical Field
The invention relates to the technical field of chips, in particular to an isolation capacitor and a preparation method of the isolation capacitor.
Background
With the rapid development of integrated circuits, digital isolators are increasingly being widely used in the industrial fields of smart grids, rail transit, automotive electronics, and the like. However, digital isolators will inevitably operate in these industrial fields in environments where high voltages, strong magnetic fields are present for a long period of time, and thus the lifetime of the isolating capacitive devices is of paramount importance. To address the device lifetime problem, the following three techniques are generally used to isolate the device: optocoupler isolation, magnetic isolation, and capacitive isolation. Compared with the traditional optical coupling isolation, the capacitive isolation technology has obvious advantages in the aspects of power consumption, communication speed, circuit integration level, service life and the like. Meanwhile, the capacitance isolation technology is well compatible with the standard CMOS technology, is rapidly accepted by the market and occupies a certain position due to the characteristics of high transmission rate, low cost, high integration level and the like, so that the capacitance isolation technology is also paid attention to in the power industry to be greatly researched, and is further widely applied to the scenes of intelligent ammeter, power relay protection, power generation control and the like.
Existing isolation capacitors typically include upper and lower plates and a dielectric layer between the plates. The upper polar plate and the lower polar plate are manufactured through a metal target sputtering process, and the dielectric layer is silicon dioxide deposited by a chemical vapor deposition method. However, the upper and lower plates of the existing isolation capacitor are generally rectangular, when the upper plate bears high voltage, a tip discharge is inevitably formed at the metal end, and current is conducted to the passivation layer through the top metal, so that silicon dioxide at the interface of the passivation layer breaks down, as shown in fig. 17, and the device is disabled, so that the service life of the device cannot be guaranteed. Fig. 1 is a schematic diagram of a conventional isolation capacitor.
Therefore, aiming at the problems of discharge at the tip and the side of the metal tail end of the upper electrode plate of the device, a novel isolation capacitor device and a preparation method thereof are needed to be proposed.
Disclosure of Invention
The invention aims to provide an isolation capacitor and a preparation method of the isolation capacitor, which at least partially solve the problems of sharp angle at the metal tail end and side discharge of an upper polar plate of the isolation capacitor, and simultaneously introduce high voltage and strong electric field of the upper polar plate into silicon dioxide body to avoid the problem of device failure caused by breakdown at interfaces (easy breakdown points) of different dielectric layers.
In order to achieve the above object, a first aspect of the present invention provides an isolation capacitor, comprising: a lower plate disposed on the substrate; the first insulating medium is arranged on the lower polar plate; the metal layer is arranged in the first insulating medium, wherein the edge of the metal layer is of a smooth curved surface structure, and the matching surface of the smooth curved surface structure and the metal layer is a tangent plane; and an upper electrode plate arranged on the first insulating medium, wherein the upper electrode plate is connected with the metal layer through a metal channel.
Preferably, the metal layer includes two metal regions symmetrical about a central axis, wherein the central axis is a line connecting a center of the upper electrode plate and a center of the lower electrode plate, and edges of the metal regions are of a smoothly curved structure.
Preferably, the distance from any point on the lower polar plate to any point on the smooth curved surface structure is greater than or equal to the thickness of the first insulating medium.
Preferably, the upper polar plate is connected with the smooth curved surface structure of the edge of the metal area through four metal channels.
Preferably, in the case that the metal layer is a plurality of metal layers, any adjacent two metal layers are connected via a metal channel.
Preferably, in the case that the metal layer includes two metal regions symmetrical about a central axis, a previous metal region of the same-side metal regions in any two adjacent metal layers is connected to a smoothly curved structure of an edge of a next metal region through four metal channels.
Preferably, the number of the plurality of metal layers is determined by the thickness of the first insulating medium.
Preferably, the edge of the upper polar plate and/or the lower polar plate is in a smooth curved surface structure, wherein the edge of the metal layer is in a smooth curved surface structure, and the matching surface of the smooth curved surface structure and the metal layer is a tangent plane.
Preferably, the material of the smooth curved surface structure is different from the material of the upper electrode plate and the material of the metal layer, and the material of the smooth curved surface structure is tungsten.
Preferably, the upper polar plate, the lower polar plate and the metal layer are all sandwich structures formed by Ti or TiN, metal and TiN.
Preferably, the outer layer of the metal channel is a Ti or TiN layer.
Preferably, the isolation capacitor further includes: the first insulating medium and the second insulating medium are sequentially arranged on the upper polar plate, wherein the dielectric constant of the first insulating medium is smaller than that of the second insulating medium.
Preferably, the smoothly curved structure comprises a cylindrical structure.
Through the technical scheme, the first insulating medium is creatively arranged on the lower polar plate, the metal layer is arranged in the first insulating medium, the edge of the metal layer is of a smooth curved surface structure, the matching surface of the smooth curved surface structure and the metal layer is a tangential surface, and the upper polar plate is arranged on the first insulating medium, wherein the upper polar plate is connected with the metal layer through the metal channel, so that the problems of sharp angle and side discharge of the metal end of the upper polar plate of the isolation capacitor are at least partially solved, and meanwhile, the high voltage and strong electric field of the upper polar plate are introduced into silicon dioxide, so that the problem of device failure caused by breakdown at interfaces (easy breakdown points) of different medium layers is avoided.
The second aspect of the present invention provides a method for manufacturing an isolation capacitor, the method comprising: forming a lower electrode plate on a substrate; forming a first insulating medium on the lower polar plate; forming a metal layer in the first insulating medium, wherein the edge of the metal layer is of a smooth curved surface structure, and the matching surface of the smooth curved surface structure and the metal layer is a tangent plane; and forming an upper electrode plate on the first insulating medium, wherein the upper electrode plate is connected with the metal layer through a metal channel.
Preferably, a metal layer is formed inside the first insulating medium; and forming an upper plate on the first insulating medium, comprising: forming a metal layer inside the first insulating medium, wherein the metal layer comprises two metal areas symmetrical about a central axis, and the central axis is a connecting line between the center of the upper polar plate and the center of the lower polar plate; forming four through holes communicated with four edges of the metal area downwards from the upper surface of the first insulating medium, and filling metal in the through holes to form a smooth curved surface structure of a metal channel and the edges of the metal area; and forming an upper plate covering the metal channel on the first insulating medium.
Preferably, the forming four through holes connected to four edges of the metal region downward from the upper surface of the first insulating medium, and filling metal in the through holes to form a smooth curved structure of a metal channel and the edges of the metal region includes: forming four vertical through holes downwards from the upper surface of the first insulating medium by dry etching, wherein the bottoms of the vertical through holes are aligned with the horizontal central axis of the metal area, and the distance from the center of the bottoms of the vertical through holes to the corresponding edge of the metal area is smaller than the radius of the smooth curved surface structure; forming a cylindrical through hole with the bottom central line of the vertical through hole as an axis at the bottom of the vertical through hole by wet etching, wherein the radius of the cylindrical through hole is larger than the thickness of the metal area; and filling metal in the vertical through holes and the cylindrical through holes.
Preferably, in the case that the metal layer is a plurality of metal layers, a first insulating medium is formed on the lower plate; forming a metal layer inside the first insulating medium; and forming an upper plate on the first insulating medium, comprising: forming an insulating medium with a first thickness on the lower polar plate or the next metal layer; forming a first metal layer on the insulating medium with the first thickness, wherein the first metal layer comprises two metal areas symmetrical about a central axis, and the central axis is a connecting line between the center of the upper polar plate and the center of the lower polar plate; forming an insulating medium with a second thickness on the first metal layer; forming four through holes communicated with four edges of the metal area downwards from the upper surface of the insulating medium with the second thickness, and filling metal in the through holes to form a smooth curved surface structure of a metal channel and the edges of the metal area; forming a second metal layer covering the metal channel on the insulating medium with the second thickness so as to form any two adjacent metal layers; and forming an upper plate covering the metal channel on the first insulating medium under the condition that the total thickness of each insulating medium is equal to the thickness of the first insulating medium.
Preferably, the number of layers of the plurality of metal layers is determined by the thickness of the first insulating medium.
Preferably, the distance from any point on the lower polar plate to any point on the smooth curved surface structure is greater than or equal to the thickness of the first insulating medium.
Preferably, the forming four through holes connected to four edges of the metal region from the upper surface of the insulating medium with the second thickness downward, and filling metal in the through holes to form a smooth curved structure of a metal channel and the edges of the metal region includes: forming four vertical through holes downwards from the upper surface of the insulating medium with the second thickness by adopting dry etching, wherein the bottoms of the vertical through holes are aligned with the horizontal central axis of the metal area, and the distance from the center of the bottoms of the vertical through holes to the corresponding edge of the metal area is smaller than the radius of the smooth curved surface structure; forming a cylindrical through hole with the bottom central line of the vertical through hole as an axis at the bottom of the vertical through hole by wet etching, wherein the radius of the cylindrical through hole is larger than the thickness of the metal area; and filling metal in the vertical through holes and the cylindrical through holes.
Preferably, before performing the step of filling the metal in the vertical through holes and the cylindrical through holes, the manufacturing method further includes: and depositing Ti or TiN layers in the vertical through holes and the cylindrical through holes.
Preferably, the edge of the upper polar plate and/or the lower polar plate is of a smooth curved surface structure, and the matching surface of the smooth curved surface structure and the upper polar plate and/or the lower polar plate is a tangent plane.
Preferably, the material of the smooth curved surface structure is different from the material of the upper electrode plate and the material of the metal layer, and the material of the smooth curved surface structure is tungsten.
Preferably, the preparation method further comprises: forming a first insulating medium on the upper polar plate; and forming a second insulating medium on the first insulating medium, wherein the dielectric constant of the first insulating medium is smaller than that of the second insulating medium.
Through the technical scheme, the first insulating medium is creatively formed on the lower polar plate, the metal layer is formed in the first insulating medium, the edge of the metal layer is of a smooth curved surface structure, the matching surface of the smooth curved surface structure and the metal layer is a tangent plane, and the upper polar plate is formed on the first insulating medium, wherein the upper polar plate is connected with the metal layer through the metal channel, so that the problems of sharp angle and side discharge of the metal end of the upper polar plate of the isolation capacitor are at least partially solved, and meanwhile, the high voltage and strong electric field of the upper polar plate are introduced into silicon dioxide, so that the problem of device failure caused by breakdown at interfaces (easy breakdown points) of different medium layers is avoided.
A third aspect of the invention provides a chip comprising said isolation capacitor.
Additional features and advantages of embodiments of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings are included to provide a further understanding of embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain, without limitation, the embodiments of the invention. In the drawings:
FIG. 1 is a block diagram of an isolation capacitor of the prior art;
FIG. 2 is a block diagram of an isolation capacitor according to an embodiment of the present invention;
FIG. 3 is a block diagram of an isolation capacitor according to an embodiment of the present invention;
FIGS. 4a and 4b are block diagrams of a substrate according to an embodiment of the present invention;
fig. 5 to 16 are schematic structural views of an isolation capacitor according to an embodiment of the invention in the process of manufacturing the isolation capacitor; and
fig. 17 is a block diagram of an isolation capacitor according to the prior art according to an embodiment of the present invention.
Detailed Description
The following describes specific embodiments of the present invention in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.
Fig. 2 is a block diagram of an isolation capacitor according to an embodiment of the present invention. As shown in fig. 2, the isolation capacitor may include: a lower polar plate 2 arranged on the substrate 1; a first insulating medium 3 provided on the lower plate 2; the metal layer 4 is disposed in the first insulating medium 3, wherein an edge of the metal layer 4 is a smooth curved surface structure 7 (as shown in fig. 3), and a mating surface of the smooth curved surface structure 7 and the metal layer 4 is a tangential surface; and an upper electrode plate 5 provided on the first insulating medium 3, wherein the upper electrode plate 5 is connected with the metal layer 4 via a metal channel 6. Therefore, the invention firstly proposes that the strong electric fields at the metal tail end and the side edge of the upper polar plate of the isolation capacitor are transferred into the same insulating medium body through the metal channel, so that the strong electric fields at the metal tail end and the side edge are far away from the interface of two different insulating mediums. It should be noted that the upper plate may be connected to any location of the metal layer via a metal channel.
The metal layer 4 and the smooth curved surface structure 7 at the edge thereof may be integrally formed or two-piece formed (the specific forming process is described below with respect to the preparation process of the isolation capacitor).
The metal layer 4 may be one metal layer (as shown in fig. 2) or may be multiple metal layers (as shown in fig. 15, which includes multiple metal layers 45 and 46). That is, a strong electric field of the upper plate of the isolation capacitance may be introduced through the metal channel to one or more metal layers in the dielectric.
The smooth curved surface structure can comprise a cylindrical structure, and the arrangement can homogenize the electric field intensity of the metal terminal and the side edge, so that the problems of sharp angle of the metal terminal and side edge discharge of the conventional upper polar plate are solved. Of course, the smooth curved surface structure may be set to other curved surface structures according to practical situations, but other curved surface structures may cause discharge problems to some extent.
The upper electrode plate 5, the lower electrode plate 2 and the metal layer 4 may be all sandwich structures formed by Ti or TiN, metal and TiN. For example, the metal may be aluminum.
Specifically, the metal layer includes two metal regions (e.g., metal region L, R shown in fig. 2 or 15) that are symmetrical about a central axis (OO').
Wherein the central axis (OO ') is a connecting line between the center (O) of the upper polar plate and the center (O') of the lower polar plate, and the edge of the metal region is of a smooth curved surface structure. Therefore, the strong electric field of the upper polar plate with no capacitor can be introduced into the central area of the dielectric medium through the symmetrical structure, and the problem that breakdown occurs at the interfaces (easy breakdown points) of different dielectric layers to cause the failure of the device is avoided.
Wherein the distance from any point on the lower polar plate to any point on the smooth curved surface structure is greater than or equal to the thickness a of the first insulating medium.
As shown in FIG. 16, distances c, b from the left edge of the lower plate to the right edge of the metal region L of the metal layer 45 and the right edge of the metal region L of the metal layer 46 satisfy c.gtoreq.a, b.gtoreq.a simultaneously; similarly, distances c ', b' (not shown) from the right edge of the lower plate to the left edge of the metal region R of the metal layer 45 and the left edge of the metal region R of the metal layer 46 satisfy c '. Gtoreq.a and b'. Gtoreq.a simultaneously, so as to avoid that the capacitance between the metal layer 45 or the metal layer 46 and the lower plate 2 is broken down in advance, and improve the breakdown reliability of the device over time.
As shown in fig. 2, the upper plate 5 is connected to a smoothly curved structure 7 at the edge of the metal region (e.g., L or R) through four metal channels 6.
In this embodiment, the upper polar plate can be connected with the smooth curved surface structure in the metal layer through the metal channel, and the manufacturing process corresponding to the connection mode is simplified and efficient. It is first proposed that the upper polar plate 5 is connected with the lower metal layer (i.e. the metal layer 4) through the metal channel 6, so that the lower metal layer and the upper polar plate have the same potential, and the strong electric field at the metal end and the side edge of the upper polar plate is effectively transferred into the insulating medium body, so that the current formed by the strong electric field of the conventional upper polar plate is prevented from breaking down along the interface between the first insulating medium 3 and the second insulating medium 8 (as shown in fig. 16), and the breakdown reliability of the device with time is improved.
In one embodiment, the strong electric field of the upper plate of the isolation capacitor may be introduced through a metal channel to multiple metal layers in the dielectric.
Specifically, the metal layer 4 is a plurality of metal layers (two metal layers 45, 46 as shown in fig. 15).
Wherein the number of the plurality of metal layers is determined by the thickness of the first insulating medium. But the metal layer is at least 1 layer and at most (n-3) layers, wherein n is the total metal layer number in the process determined by the complexity of the chip. For isolation capacitors, the number of metal layers is at most 2 if the total number of metal layers n=5 in the process determined by the chip complexity.
In the case that the metal layer is a plurality of metal layers, any two adjacent metal layers are connected through a metal channel. If the metal layers are metal layers 45, 46, the metal layer 45 is connected to the metal layer 46 via the metal channels, except that the upper plate is connected to the metal layer 46 via the metal channels 6. Therefore, the upper polar plate 5 can be connected with the lower metal (namely the metal layers 45 and 46) through the metal channel 6, so that the lower metal and the upper polar plate have the same potential, the strong electric field at the metal tail end and the side edge of the upper polar plate is effectively transferred into the insulating medium body, the current formed by the strong electric field of the conventional upper polar plate is further prevented from being broken down along the interface between the first insulating medium 3 and the second insulating medium 8, and the time breakdown reliability of the device is improved. It should be noted that the previous metal layer in the adjacent metal layers can be connected to any position of the next metal layer through the metal vias.
Further, in the case that the metal layer includes two metal regions symmetrical about a central axis, a previous metal region of the same-side metal region in any two adjacent metal layers is connected to a smoothly curved structure of an edge of a next metal region through four metal channels.
In this embodiment, the upper metal layer may be connected to the smooth curved surface structure in the lower metal layer through the metal channel, and the manufacturing process corresponding to this connection mode is simplified and efficient. As shown in fig. 15, if the metal layers are metal layers 46 and 46, except that the upper electrode plate is connected with the metal layer 46 through the metal channel 6, the metal region L in the metal layer 46 is connected with the smooth curved surface structure of the edge of the metal region L in the metal layer 45 through the metal channel, and the metal region R in the metal layer 46 is connected with the smooth curved surface structure of the edge of the metal region R in the metal layer 45 through the metal channel, thereby connecting the upper electrode plate 5 with the lower metal layer (i.e. the metal layers 45 and 46) through the metal channel 6, so that the lower metal layer and the upper electrode plate have the same potential, the strong electric field at the metal end and side of the upper electrode plate is effectively transferred into the insulating medium body, and further, the current formed by the strong electric field of the conventional upper electrode plate is prevented from being broken down along the interface between the first insulating medium 3 and the second insulating medium 8, and the reliability of the device due to breakdown with time is improved.
In an embodiment, the edge of the upper polar plate and/or the lower polar plate is in a smooth curved surface structure. Therefore, the tip discharge can be effectively avoided, and the breakdown reliability of the device with time is improved.
For example, the shape of the end and side of the lower plate may be a conventional rectangular shape or a spherical structure.
Further, the material of the smooth curved surface structure is different from the material of the upper polar plate and the material of the metal layer, and the material of the smooth curved surface structure is tungsten.
For example, the smooth curved structures (e.g., cylindrical structures) of the edges of the upper plate, metal layer, lower plate may be filled with tungsten. This is because tungsten has a good filling effect, and can more effectively avoid tip discharge and improve the reliability of breakdown of the device over time. The metal end of the upper plate was first set to a cylindrical structure (shown as a sphere in cross-section) and filled with tungsten metal. The conventional upper plate end is formed by dry etching, so the sidewall topography is rough. However, the tail end of the upper polar plate is formed into a sphere shape by wet etching, and then the tungsten metal is filled by a chemical vapor deposition method, so that the appearance of the tail end of the upper polar plate is fully repaired to be very smooth, further, the point discharge is effectively avoided, and the reliability of the device in breakdown with time is improved.
In one embodiment, the outer layer of the metal channel is a Ti or TiN layer. Since the adhesion between tungsten and the insulating medium (oxide, e.g. silicon dioxide) is poor, the metallic tungsten is easily separated from the insulating medium without the aid of Ti/TiN.
In an embodiment, the isolation capacitor may further include: the first insulating medium and the second insulating medium are sequentially arranged on the upper polar plate, wherein the dielectric constant of the first insulating medium is smaller than that of the second insulating medium.
The invention transfers the strong electric fields at the metal tail end and the side edge of the upper polar plate of the isolation capacitor into the same insulating medium body through the metal channel, so that the strong electric fields at the metal tail end and the side edge are far away from the interface of two different insulating mediums. Thus, in the present embodiment, a thinner first insulating medium can be provided.
In summary, the first insulating medium is creatively disposed on the lower electrode plate, the metal layer is disposed in the first insulating medium, the edge of the metal layer is of a smooth curved surface structure, and the upper electrode plate is disposed on the first insulating medium, wherein the upper electrode plate is connected with the metal layer through a metal channel, so that the problems of sharp angle and side discharge of the metal end of the upper electrode plate of the isolation capacitor are at least partially solved, and meanwhile, high voltage and strong electric field of the upper electrode plate are introduced into silicon dioxide, so that the problem of device failure caused by breakdown at interfaces (easy breakdown points) of different medium layers is avoided.
An embodiment of the invention provides a preparation method of an isolation capacitor, which comprises the following steps: forming a lower electrode plate on a substrate; forming a first insulating medium on the lower polar plate; forming a metal layer in the first insulating medium, wherein the edge of the metal layer is of a smooth curved surface structure, and the matching surface of the smooth curved surface structure and the metal layer is a tangent plane; and forming an upper electrode plate on the first insulating medium, wherein the upper electrode plate is connected with the metal layer through a metal channel.
As shown in fig. 4a, the base 1 comprises a substrate 11, an insulating medium 12, a metal 10. In the other figures below, all are represented by the substrate 1 shown in fig. 4 b.
In one embodiment, a metal layer is formed inside the first insulating layer. The metal layer and the upper electrode plate can be prepared by the following process.
Forming a metal layer inside the first insulating medium; and forming an upper plate on the first insulating medium, comprising: forming a metal layer inside the first insulating medium, wherein the metal layer comprises two metal areas symmetrical about a central axis, and the central axis is a connecting line between the center of the upper polar plate and the center of the lower polar plate; forming two groups of through holes which are respectively communicated with the two metal areas downwards from the upper surface of the first insulating medium, and filling metal into the two groups of through holes to form a smooth curved surface structure of two groups of metal channels and edges of the two metal areas, wherein the horizontal distance from the edge of an area surrounded by each group of through holes to the edge of the corresponding metal area is smaller than the radius of the smooth curved surface structure; and forming an upper plate covering the two groups of metal channels on the first insulating medium.
Specifically, the forming two groups of through holes from the upper surface of the first insulating medium to the two metal areas respectively, and filling metal in the two groups of through holes to form a smooth curved surface structure of two groups of metal channels and edges of the two metal areas includes: forming two groups of vertical through holes downwards from the upper surface of the first insulating medium by dry etching, wherein each group of vertical through holes comprises four vertical through holes, the bottoms of the vertical through holes are aligned with the horizontal central axis of the metal area, and the distance from the center of the bottoms of the vertical through holes to the corresponding edge of the metal area is smaller than the radius of the smooth curved surface structure; forming cylindrical through holes with the central lines of the bottoms of the two groups of vertical through holes as axes by wet etching, wherein the radius of each cylindrical through hole is larger than the thickness of the metal area; and filling metal in the vertical through holes and the cylindrical through holes.
In another embodiment, a plurality of metal layers are formed inside the first insulating layer. The number of the metal layers is determined by the thickness of the first insulating medium. Specifically, the plurality of metal layers and the upper plate can be prepared through the following processes.
Forming a first insulating medium on the lower electrode plate under the condition that the metal layers are a plurality of metal layers; forming a metal layer inside the first insulating medium; and forming an upper plate on the first insulating medium, comprising: forming an insulating medium with a first thickness on the lower polar plate or the next metal layer; forming a first metal layer on the insulating medium with the first thickness, wherein the first metal layer comprises two metal areas symmetrical about a central axis, and the central axis is a connecting line between the center of the upper polar plate and the center of the lower polar plate; forming an insulating medium with a second thickness on the first metal layer; forming two groups of through holes which are respectively communicated with four edges of the two metal areas downwards from the upper surface of the insulating medium with the second thickness, and filling metal into the two groups of through holes to form a smooth curved surface structure of two groups of metal channels and the edges of the two metal areas, wherein the horizontal distance from the edges of the areas surrounded by each group of through holes to the edges of the corresponding metal areas is smaller than the radius of the smooth curved surface structure; forming a second metal layer covering the two groups of metal channels on the insulating medium with the second thickness so as to form any two adjacent metal layers; and forming an upper plate covering the metal channel on the first insulating medium under the condition that the total thickness of each insulating medium is equal to the thickness of the first insulating medium.
Specifically, two sets of through holes respectively connected to four edges of the two metal areas are formed downwards from the upper surface of the insulating medium with the second thickness, and metal is filled in the two sets of through holes to form a smooth curved surface structure of two sets of metal channels and the edges of the two metal areas, and the structure comprises: forming two groups of vertical through holes downwards from the upper surface of the insulating medium with the second thickness by adopting dry etching, wherein each group of vertical through holes comprises four vertical through holes, the bottoms of the vertical through holes are aligned with the horizontal central axis of the metal area, and the distance from the center of the bottoms of the vertical through holes to the corresponding edge of the metal area is smaller than the radius of the smooth curved surface structure; forming cylindrical through holes with the central lines of the bottoms of the two groups of vertical through holes as axes by wet etching, wherein the radius of each cylindrical through hole is larger than the thickness of the metal area; and filling metal in the vertical through holes and the cylindrical through holes.
For any of the above embodiments, before performing the step of filling the metal in the vertical through holes and the cylindrical through holes, the manufacturing method may further include: and depositing Ti or TiN layers in the vertical through holes and the cylindrical through holes. Since the adhesion between tungsten and the insulating medium (oxide, e.g. silicon dioxide) is poor, the metallic tungsten is easily separated from the insulating medium without the aid of Ti/TiN.
For any of the above embodiments, a distance from any point on the lower plate to any point on the smoothly curved structure is greater than or equal to a thickness of the first insulating medium.
As shown in FIG. 2, the distance c from the left edge of the lower plate to the right edge of the metal region L of the metal layer 4 satisfies c.gtoreq.a; similarly, the distance c 'from the right edge of the lower electrode plate to the left edge of the metal region R of the metal layer 4 satisfies c'. Gtoreq.a, so as to avoid the capacitor between the metal layer 4 and the lower electrode plate 2 from being broken down in advance and improve the breakdown reliability of the device over time.
As shown in FIG. 16, distances c, b from the left edge of the lower plate to the right edge of the metal region L of the metal layer 45 and the right edge of the metal region L of the metal layer 46 satisfy c.gtoreq.a, b.gtoreq.a simultaneously; similarly, distances c ', b' (not shown) from the right edge of the lower plate to the left edge of the metal region R of the metal layer 45 and the left edge of the metal region R of the metal layer 46 satisfy c '. Gtoreq.a and b'. Gtoreq.a simultaneously, so as to avoid that the capacitance between the metal layer 45 or the metal layer 46 and the lower plate 2 is broken down in advance, and improve the breakdown reliability of the device over time.
For any of the above embodiments, the edge of the upper plate and/or the lower plate is a smooth curved surface structure, and the mating surface of the smooth curved surface structure and the upper plate and/or the lower plate is a tangential surface. For example, the shape of the ends and sides of the bottom plate may be a conventional rectangular shape or a cylindrical structure.
For any of the above embodiments, the material of the smooth curved structure is different from the material of both the upper electrode plate and the metal layer, and the material of the smooth curved structure is tungsten.
For example, the smooth curved structures (e.g., cylindrical structures) of the edges/ends of the upper plate, metal layer, lower plate may be filled with tungsten. This is because tungsten has a good filling effect, and can more effectively avoid tip discharge and improve the reliability of breakdown of the device over time. The metal end of the upper plate is first set to be cylindrical and filled with tungsten metal. The conventional upper plate end is formed by dry etching, so the sidewall topography is rough. However, the tail end of the upper polar plate is formed into a cylinder shape by wet etching, and then the metal tungsten is filled by a chemical vapor deposition method, so that the appearance of the tail end of the upper polar plate is sufficiently repaired to be very smooth, further, the point discharge is effectively avoided, and the reliability of the device in time breakdown is improved.
In one embodiment, the method of preparing further comprises: forming a first insulating medium on the upper polar plate; and forming a second insulating medium on the first insulating medium, wherein the dielectric constant of the first insulating medium is smaller than that of the second insulating medium. The invention transfers the strong electric fields at the metal tail end and the side edge of the upper polar plate of the isolation capacitor into the same insulating medium body through the metal channel, so that the strong electric fields at the metal tail end and the side edge are far away from the interface of two different insulating mediums. Thus, in the present embodiment, a thinner first insulation thickness can be provided.
The process of manufacturing the isolation capacitor is described below by way of example with reference to fig. 5 to 15.
As shown in fig. 5, a sandwich structure of Ti/TiN (not shown), metal 20, tiN (not shown) is deposited on the substrate 1 using a physical vapor deposition method. In various embodiments of the present invention, the metal X of the sandwich structure is simply referred to as metal X (e.g., aluminum), for example, the metal 20, tiN (not shown) of the sandwich structure may be simply referred to as metal 20.
As shown in fig. 6, photoresist is spin-coated on the metal 20, and then exposure, development, etching, etc. are performed to etch away the unnecessary metal 20, leaving only the necessary metal 20 as the lower plate 2.
As shown in fig. 7, the insulating medium 3 of the first layer is deposited by means of PECVD, and then the insulating medium 3 is planarized by means of chemical mechanical polishing. The insulating medium 3 in this embodiment is silicon dioxide. The silicon dioxide dielectric layer is formed by using Tetraethoxysilane (TEOS) to generate decomposition reaction under the condition of about 400 ℃.
As shown in fig. 8, a physical vapor deposition method is used to deposit a metal 30 on the insulating medium 3.
As shown in fig. 9, photoresist is spin-coated on the metal 30, and then exposure, development, etching, etc. are performed to etch away the unnecessary metal 30, leaving only the necessary metal 30 (which includes the metal region L, R) to form the metal layer 45.
As shown in fig. 10, the second layer of insulating medium 3 is deposited by PECVD, and then the insulating medium 3 is planarized by chemical mechanical polishing. The insulating medium 3 in this embodiment is silicon dioxide. The silicon dioxide dielectric layer is formed by using Tetraethoxysilane (TEOS) to generate decomposition reaction under the condition of about 400 ℃.
As shown in fig. 11, via exposure, development, dry etching, which is anisotropic etching, is performed on the insulating medium 3 of the second layer, so that a straight topography can be etched to form a vertical via.
As shown in fig. 12, the vertical through hole is further etched, this etching is performed by wet etching, and is isotropic etching, so that the bottom (for example, the center) of the through hole formed in the previous step is used as the center of a circle, and isotropic etching is performed at a certain radius, so as to form a spherical hollow through hole (fig. 12 is a cross-sectional view, and a cylindrical through hole is formed for the actual three-dimensional situation). Wherein the vertical through holes and the hollow through holes form through holes 31. However, during the formation of the spheres, the metal cannot be etched away, so that the two ends are incomplete spheres.
As shown in fig. 13, a Ti/TiN layer is deposited by physical vapor deposition (since the adhesion between tungsten and oxide is poor, and metal tungsten is easily separated from oxide without the assistance of Ti/TiN), then a metal tungsten layer is deposited, and then chemical mechanical polishing is performed to polish the metal tungsten. If only one metal layer is prepared (as shown in fig. 2), the steps corresponding to the metal 40 and the via 41 in fig. 14 below are skipped.
As shown in fig. 14, the metal 40, the via 41, the metal 50, and the via 51 are formed by the same steps as those of the metal 30 and the via 31, and the metal tungsten is similarly filled, that is, the steps corresponding to fig. 8 to 13. Note, among them, that the chemical mechanical polishing of the through hole 51 is stopped at a position just in contact with the circular sphere.
As shown in fig. 15, a layer of insulating medium 3 is deposited by HDP CVD and then a layer of insulating medium 8 is deposited by PECVD. And then exposing, developing and etching the window to form a window for packaging and wire bonding. Thus, the preparation of the novel isolation capacitor structure is completed.
In summary, the first insulating medium is creatively formed on the lower polar plate, the metal layer is formed in the first insulating medium, the edge of the metal layer is of a smooth curved surface structure, and the upper polar plate is formed on the first insulating medium, wherein the upper polar plate is connected with the metal layer through a metal channel, so that the problems of sharp angle at the metal end and side discharge of the upper polar plate of the isolation capacitor are at least partially solved, and meanwhile, high voltage and strong electric field of the upper polar plate are introduced into silicon dioxide, so that the problem of device failure caused by breakdown at interfaces (easy breakdown points) of different medium layers is avoided.
The embodiment of the invention also provides a chip which comprises the isolation capacitor.
Specific details and benefits of the chip provided by the present invention can be found in the above description of the isolation capacitor, and will not be repeated here.
The foregoing details of the optional implementation of the embodiment of the present invention have been described in detail with reference to the accompanying drawings, but the embodiment of the present invention is not limited to the specific details of the foregoing implementation, and various simple modifications may be made to the technical solution of the embodiment of the present invention within the scope of the technical concept of the embodiment of the present invention, and these simple modifications all fall within the protection scope of the embodiment of the present invention.
In addition, the specific features described in the above embodiments may be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, various possible combinations of embodiments of the present invention are not described in detail.
In addition, any combination of various embodiments of the present invention may be performed, so long as the concept of the embodiments of the present invention is not violated, and the disclosure of the embodiments of the present invention should also be considered.

Claims (25)

1. An isolation capacitor, the isolation capacitor comprising:
A lower plate disposed on the substrate;
the first insulating medium is arranged on the lower polar plate;
the metal layer is arranged in the first insulating medium, wherein the edge of the metal layer is of a smooth curved surface structure, and the matching surface of the smooth curved surface structure and the metal layer is a tangent plane; and
and the upper polar plate is arranged on the first insulating medium, and the upper polar plate is connected with the metal layer through a metal channel.
2. The isolation capacitor of claim 1, wherein the metal layer comprises two metal regions symmetrical about a central axis,
the central axis is a connecting line between the center of the upper polar plate and the center of the lower polar plate, and the edge of the metal area is of a smooth curved surface structure.
3. The isolation capacitor of claim 2, wherein a distance from any point on the lower plate to any point on the smoothly curved structure is greater than or equal to a thickness of the first insulating medium.
4. The isolation capacitor of claim 2, wherein the upper plate is connected to the smoothly curved structure of the edge of the metal region by four metal channels.
5. The isolation capacitor of any one of claims 1 to 4, wherein in the case where the metal layer is a plurality of metal layers, any adjacent two metal layers are connected via a metal channel.
6. The isolated capacitor of claim 5, wherein in the case where the metal layer comprises two metal regions symmetrical about a central axis, a previous metal region of the same-side metal region of any two adjacent metal layers is connected to a smoothly curved structure of an edge of a next metal region by four metal channels.
7. The isolation capacitor of claim 5, wherein the number of the plurality of metal layers is determined by a thickness of the first insulating medium.
8. The isolation capacitor of claim 1, wherein the edge of the upper plate and/or the lower plate is a smoothly curved structure, and the mating surface of the smoothly curved structure and the upper plate and/or the lower plate is a tangential surface.
9. The isolation capacitor of claim 8, wherein the smooth curved structure is made of a material different from the material of both the upper plate and the metal layer, and the smooth curved structure is made of tungsten.
10. The isolation capacitor of claim 1, wherein the upper plate, the lower plate and the metal layer are each a sandwich structure of Ti or TiN, metal and TiN.
11. The isolation capacitor of claim 1, wherein the outer layer of the metal channel is a Ti or TiN layer.
12. The isolation capacitor of claim 1, further comprising: the first insulating medium and the second insulating medium are sequentially arranged on the upper polar plate, wherein the dielectric constant of the first insulating medium is smaller than that of the second insulating medium.
13. The isolation capacitor of claim 1, wherein the smoothly curved structure comprises a cylindrical structure.
14. A method for manufacturing an isolation capacitor, the method comprising:
forming a lower electrode plate on a substrate;
forming a first insulating medium on the lower polar plate;
forming a metal layer in the first insulating medium, wherein the edge of the metal layer is of a smooth curved surface structure, and the matching surface of the smooth curved surface structure and the metal layer is a tangent plane; and
an upper plate is formed on the first insulating medium, wherein the upper plate is connected with the metal layer through a metal channel.
15. The method of claim 14, wherein a metal layer is formed inside the first insulating medium; and forming an upper plate on the first insulating medium, comprising:
Forming a metal layer inside the first insulating medium, wherein the metal layer comprises two metal areas symmetrical about a central axis, and the central axis is a connecting line between the center of the upper polar plate and the center of the lower polar plate;
forming two groups of through holes which are respectively communicated with the two metal areas downwards from the upper surface of the first insulating medium, and filling metal into the two groups of through holes to form a smooth curved surface structure of two groups of metal channels and edges of the two metal areas, wherein the horizontal distance from the edge of an area surrounded by each group of through holes to the edge of the corresponding metal area is smaller than the radius of the smooth curved surface structure; and
and forming an upper polar plate covering the two groups of metal channels on the first insulating medium.
16. The method of manufacturing according to claim 15, wherein forming two sets of through holes from the upper surface of the first insulating medium downward, the two sets of through holes being respectively connected to the two metal areas, and filling metal into the two sets of through holes to form a smooth curved structure of two sets of metal channels and edges of the two metal areas, comprises:
forming two groups of vertical through holes downwards from the upper surface of the first insulating medium by dry etching, wherein each group of vertical through holes comprises four vertical through holes, the bottoms of the vertical through holes are aligned with the horizontal central axis of the metal area, and the distance from the center of the bottoms of the vertical through holes to the corresponding edge of the metal area is smaller than the radius of the smooth curved surface structure;
Forming cylindrical through holes with the central lines of the bottoms of the two groups of vertical through holes as axes by wet etching, wherein the radius of each cylindrical through hole is larger than the thickness of the metal area; and
and filling metal in the vertical through holes and the cylindrical through holes.
17. The method according to claim 14, wherein in the case where the metal layer is a plurality of metal layers, a first insulating medium is formed on the lower plate; forming a metal layer inside the first insulating medium; and forming an upper plate on the first insulating medium, comprising:
forming an insulating medium with a first thickness on the lower polar plate or the next metal layer;
forming a first metal layer on the insulating medium with the first thickness, wherein the first metal layer comprises two metal areas symmetrical about a central axis, and the central axis is a connecting line between the center of the upper polar plate and the center of the lower polar plate;
forming an insulating medium with a second thickness on the first metal layer;
forming two groups of through holes which are respectively communicated with four edges of the two metal areas downwards from the upper surface of the insulating medium with the second thickness, and filling metal into the two groups of through holes to form a smooth curved surface structure of two groups of metal channels and the edges of the two metal areas, wherein the horizontal distance from the edges of the areas surrounded by each group of through holes to the edges of the corresponding metal areas is smaller than the radius of the smooth curved surface structure;
Forming a second metal layer covering the two groups of metal channels on the insulating medium with the second thickness so as to form any two adjacent metal layers; and
and forming an upper polar plate covering the metal channel on the first insulating medium under the condition that the total thickness of each insulating medium is equal to the thickness of the first insulating medium.
18. The method of claim 17, wherein the number of layers of the plurality of metal layers is determined by the thickness of the first insulating medium.
19. The method of manufacturing according to claim 15 or 17, wherein a distance from any point on the lower plate to any point on the smoothly curved structure is greater than or equal to a thickness of the first insulating medium.
20. The method of manufacturing according to claim 17, wherein forming two sets of through holes from the upper surface of the insulating medium of the second thickness downward, the through holes being respectively connected to four edges of the two metal areas, and filling metal into the two sets of through holes to form two sets of metal channels and a smoothly curved structure of the edges of the two metal areas, comprises:
forming two groups of vertical through holes downwards from the upper surface of the insulating medium with the second thickness by adopting dry etching, wherein each group of vertical through holes comprises four vertical through holes, the bottoms of the vertical through holes are aligned with the horizontal central axis of the metal area, and the distance from the center of the bottoms of the vertical through holes to the corresponding edge of the metal area is smaller than the radius of the smooth curved surface structure;
Forming cylindrical through holes with the central lines of the bottoms of the two groups of vertical through holes as axes by wet etching, wherein the radius of each cylindrical through hole is larger than the thickness of the metal area; and
and filling metal in the vertical through holes and the cylindrical through holes.
21. The method of manufacturing according to claim 16 or 20, characterized in that before the step of filling the metal in the vertical through-holes and the cylindrical through-holes is performed, the method of manufacturing further comprises: and depositing Ti or TiN layers in the vertical through holes and the cylindrical through holes.
22. The method of claim 14, wherein the edges of the upper plate and/or the lower plate are of a smooth curved surface structure, and the mating surfaces of the smooth curved surface structure and the upper plate and/or the lower plate are tangential surfaces.
23. The method of claim 22, wherein the material of the smooth curved structure is different from the material of both the top plate and the metal layer, and the material of the smooth curved structure is tungsten.
24. The method of manufacturing according to claim 14, further comprising:
Forming a first insulating medium on the upper polar plate; and
and forming a second insulating medium on the first insulating medium, wherein the dielectric constant of the first insulating medium is smaller than that of the second insulating medium.
25. A chip comprising an isolation capacitor as claimed in any one of claims 1 to 13.
CN202311610520.XA 2023-11-29 2023-11-29 Isolation capacitor and preparation method thereof Active CN117316931B (en)

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