CN117316836A

CN117316836A - Wafer processing management system applying marangoni effect

Info

Publication number: CN117316836A
Application number: CN202311607952.5A
Authority: CN
Inventors: 张潇阳; 吴庆丰; 代国红; 胡爱荣; 吴俊杰; 姚宇航; 游锋; 温正齐
Original assignee: Nanchang University
Current assignee: Nanchang University
Priority date: 2023-11-29
Filing date: 2023-11-29
Publication date: 2023-12-29
Anticipated expiration: 2043-11-29
Also published as: CN117316836B

Abstract

The invention discloses a wafer processing management system applying a marangoni effect.A data processing module preprocesses a uniformity index, an active ingredient concentration deviation, a convection speed floating index and an environment particle concentration index, a quality analysis module comprehensively analyzes the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environment particle concentration index after the wafer processing is completed, then carries out quality classification on the wafer, and a quality classification result is sent to an operator. The management system can monitor processing parameters affecting the quality of the wafer in real time in the processing process of the wafer, send out warning signals in time when the processing parameters are abnormal, comprehensively analyze uniformity indexes, active ingredient concentration deviation, convection speed floating indexes and environment particulate matter concentration indexes after the wafer processing is finished, and grade the quality of the wafer, so that the wafer which can be used but has lower quality is prevented from being used for precision devices.

Description

Wafer processing management system applying marangoni effect

Technical Field

The invention relates to the technical field of wafer processing management, in particular to a wafer processing management system applying a marangoni effect.

Background

Wafers, also known as wafers (wafers), are a critical material in the semiconductor industry, which are made of high purity crystalline silicon (typically single crystal silicon), typically in the form of round flats, which play a very important role in semiconductor manufacturing, as they are the basis for manufacturing Integrated Circuits (ICs) and other semiconductor devices, and which typically require cleaning and drying processes after wafer production;

wafer drying based on Marangoni (Marangoni) effect, which is an interfacial convection phenomenon caused by a surface tension gradient, has been receiving a great deal of attention, and a conventional drying technology based on Marangoni effect is to blow an organic vapor such as a surfactant component containing isopropyl alcohol IPA toward a "meniscus" formed by a wafer-air-liquid when the wafer is taken out from a water bath of deionized water, and induce the generated Marangoni effect to realize a reflux of an adhering liquid, thereby obtaining a globally dried wafer, generally called Ma Lanni lift drying.

The prior art has the following defects:

when a wafer is subjected to marangoni effect drying processing, various parameters in the processing process need to be monitored, an alarm prompt is usually sent out by an existing management system when a certain processing parameter is monitored to exceed a preset range (when the wafer is processed continuously, the wafer is possibly damaged), in the actual processing process, when various parameters affecting the processing of the wafer occur simultaneously but do not exceed the preset range, the processed wafer can be used, but part of the performance is slightly affected (such as the wafer is slightly damaged as a result or tiny impurities remain on the wafer), so that the quality of a finished product of the wafer is reduced, however, the quality of the wafer cannot be comprehensively evaluated by combining the parameters in the processing process after the wafer processing is finished by the existing management system, and when the wafer with lower quality is applied to some precise products (such as microprocessors and optoelectronic devices), the precision of the precise products is reduced, and the service life of the precise products is reduced;

Based on this, the present invention provides a wafer processing management system applying marangoni effect, which can evaluate the quality of a wafer based on various processing parameters after the wafer processing is completed, so as to avoid the above problems.

Disclosure of Invention

The invention aims to provide a wafer processing management system applying a marangoni effect so as to solve the defects in the background technology.

In order to achieve the above object, the present invention provides the following technical solutions: a wafer processing management system applying a marangoni effect comprises a film monitoring module, an initiation monitoring module, a convection monitoring module, an environment monitoring module, a data processing module, a quality analysis module, an evaluation management module and a warning control module;

and a film monitoring module: when a liquid film is formed on the surface of the wafer, the liquid film uniformity index is used for monitoring the uniformity index of the liquid film, if the liquid film uniformity index is larger than or equal to the uniformity threshold value, a warning signal is sent to the warning control module, and if the liquid film uniformity index is smaller than the uniformity threshold value, the uniformity index is sent to the data processing module;

triggering a monitoring module: in a stage of inducing a marangoni effect by a wafer surface tension gradient, the method is used for monitoring the concentration deviation of the active ingredient, sending a warning signal to a warning control module if the concentration deviation of the active ingredient is larger than or equal to a deviation threshold value, and sending the concentration deviation of the active ingredient to a data processing module if the concentration deviation of the active ingredient is smaller than the deviation threshold value;

Convection monitoring module: in a convection stage of the marangoni effect on the wafer, the method is used for monitoring a convection speed floating index, sending a warning signal to a warning control module if the convection speed floating index is larger than or equal to a floating threshold value, and sending the convection speed floating index to a data processing module if the convection speed floating index is smaller than the floating threshold value;

the warning control module: after receiving the warning signal, automatically controlling the processing equipment to stop running, and sending an alarm prompt to an operator;

and the environment monitoring module is used for: during the wafer processing process, monitoring the environmental particulate matter concentration index of a processing workshop in real time;

and a data processing module: for pre-treating the uniformity index, the active ingredient concentration deviation, the convection velocity floating index, and the environmental particulate concentration index;

and a mass analysis module: after the wafer processing is completed, comprehensively analyzing the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environment particulate matter concentration index, and grading the wafer in quality;

and an evaluation management module: and periodically acquiring a quality grading result after the wafer is processed, and evaluating the use state of processing equipment according to the quality grading result.

Preferably, the mass analysis module comprehensively calculates the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environment particulate matter concentration index to generate the mass coefficientThe expression is:

，

in the method, in the process of the invention,for uniformity index, ++>For the concentration deviation of active ingredient->For the convection speed float index +.>Is the index of the concentration of environmental particulate matters>、/>、/>、/>Proportional coefficients of uniformity index, active ingredient concentration deviation, convection speed floating index and environmental particulate matter concentration index, respectively, and +.>、/>、/>、/>Are all greater than 0.

Preferably, the mass analysis module obtains a mass coefficientAfter the value, the quality coefficient is->Comparing the value with a preset first quality threshold Z1, a preset second quality threshold Z2 and a preset third quality threshold Z3, wherein the first quality threshold Z1 is smaller than the second quality threshold Z2 and smaller than the third quality threshold Z3, and classifying the quality of the wafer.

Preferably, if the mass coefficient of the wafer isThe value is larger than or equal to a third quality threshold Z3, the quality of the analyzed wafer is unqualified, namely the wafer cannot be used, and the wafer is judged to be of four-level quality;

if the wafer isThe second mass threshold Z2 is less than or equal to the mass coefficientThe value is smaller than a third quality threshold Z3, the quality of the wafer is analyzed to be qualified, but the wafer has a small quality defect, and the wafer is judged to be three-level quality;

If the first quality threshold Z1 of the wafer is less than or equal to the quality coefficientThe value is smaller than a second quality threshold Z2, the quality of the wafer is analyzed to be qualified, but the wafer has tiny quality defects, and the wafer is judged to be of secondary quality;

if the quality coefficient of the waferThe value is smaller than a first quality threshold Z1, the quality of the wafer is analyzed to be qualified, no quality defect exists, and the wafer is judged to be of primary quality.

Preferably, the logic for obtaining the uniformity index is:

a plurality of monitoring points are arranged on the surface of the wafer, each monitoring point monitors the thickness of the liquid film, and the calculation expression of the uniformity index is as follows:

，

in the method, in the process of the invention,indicating uniformity index,/->Indicating the maximum liquid film thickness in all monitoring points, < ->Indicating the minimum liquid film thickness in all monitoring points, < + >>Mean liquid film thickness;

the calculation expression of the concentration deviation of the active ingredient is as follows:

，

in the method, in the process of the invention,for the concentration deviation of active ingredient->For the actual concentration of isopropyl alcohol during wafer processing,is the standard concentration of isopropanol.

Preferably, the calculation expression of the flow velocity floating index is:

，

in the method, in the process of the invention,indicating the convection speed floating index +.>For real-time change of convection speed +.>For the period of early warning of the viscosity of the fluid, +. >Is the time period of temperature early warning.

Preferably, the calculation expression of the environmental particulate matter concentration index is:

，

in the method, in the process of the invention,is the index of the concentration of environmental particulate matters>，/>Represent the firstjParticle concentration at the individual processing stages, particle concentration +.>The calculated expression of (2) is:

，

in the method, in the process of the invention,for the amount of particulate matter measured by the environmental monitoring module, < > j->Is the spatial volume of the processing region.

Preferably, the logic for acquiring the period of the fluid viscosity warning is: the time period when the fluid viscosity is out of the stable viscosity range is the time period of fluid viscosity early warning;

the acquisition logic of the time period of the temperature early warning is as follows: the time period when the real-time temperature is not in the stable temperature range is the time period of temperature early warning.

Preferably, the evaluation management module acquires the quality coefficients of all wafers in the processing time period, establishes a quality coefficient set, and calculates the quality coefficientsMean value of the mass coefficients within the set +.>And discrete coefficient LQ, average value of mass coefficientThe number of the quality coefficients is equal to the sum of all the quality coefficients and then removed;

，

in the method, in the process of the invention,，/>representing the number of mass coefficients within a set of mass coefficients, < +.>Is a positive integer>Representing the i-th quality coefficient value within the quality coefficient set,>representing the average value of the quality coefficient.

Preferably, if the mass coefficient is the average valueThe first quality threshold value Z1 is less than or equal to the discrete coefficient LQ threshold value, and the discrete coefficient LQ is less than or equal to the discrete coefficient LQ threshold value, so that the quality of all wafers processed by processing equipment is excellent;

if the mass coefficient is averageThe first quality threshold Z1 is less than the first quality threshold Z1, and the discrete coefficient LQ is more than the discrete coefficient LQ threshold, so that the quality of the wafer processed by the processing equipment is good;

if the mass coefficient is averageThe first quality threshold value Z1 is not less than, and the discrete coefficient LQ is not less than the discrete coefficient LQ threshold value, so that the quality of the wafer processed by the processing equipment is not more than the second quality threshold value;

if the mass coefficient is averageAnd the quality of all wafers processed by the processing equipment is equal to or greater than a first quality threshold Z1, and the discrete coefficient LQ is equal to or less than the discrete coefficient LQ threshold, which indicates that the quality of all wafers processed by the processing equipment is poor.

In the technical scheme, the invention has the technical effects and advantages that:

1. the invention pretreats the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environmental particulate matter concentration index through the data processing module, and the quality analysis module comprehensively analyzes the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environmental particulate matter concentration index after the wafer processing is completed, then carries out quality classification on the wafer, and sends a quality classification result to an operator. The management system can monitor processing parameters affecting the quality of the wafer in real time in the processing process of the wafer, and when the processing parameters are abnormal, the management system timely sends out warning signals, so that an operator can manage the wafer conveniently, and after the processing of the wafer is finished, the wafer is graded in quality after the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environmental particulate matter concentration index are comprehensively analyzed, so that the wafer which can be used but has lower quality is prevented from being used for precision devices;

2. According to the invention, the quality grading result of the processed wafer is periodically obtained through the evaluation management module, the use state of the processing equipment is evaluated according to the quality grading result and is sent to the manager, and the manager carries out corresponding management on the processing equipment based on the use state, so that the manager can know the use state of the processing equipment conveniently, and the management efficiency of the processing equipment is improved;

3. according to the invention, the quality analysis module comprehensively calculates the uniformity index, the concentration deviation of the active ingredient, the floating index of the convection speed and the concentration index of the environmental particulate matters to generate the quality coefficient, so that the analysis is more comprehensive, and the data processing efficiency is effectively improved.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings may be obtained according to these drawings for a person having ordinary skill in the art.

FIG. 1 is a block diagram of a system according to the present invention.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

Example 1: the Marangoni (Marangoni) effect is a phenomenon caused by a surface tension gradient, and usually occurs at a liquid interface, and this effect may occur at a liquid-gas interface, a liquid-liquid interface, or a liquid-solid interface, and the basic mechanism is that the surface tension of a liquid changes with changes in temperature or composition;

the specific working principle of realizing drying by utilizing the marangoni effect is as follows:

liquid film formation: first, the wafer is immersed in deionized water (DI water) or other liquid to be completely covered with the liquid, which forms a liquid film including a three-phase interface between the liquid, the wafer, and air;

the surface tension gradient triggers the marangoni effect: the marangoni effect is typically caused by a surface tension gradient at the liquid interface, where it blows organic vapors containing surface active ingredients, such as isopropyl alcohol (IPA), onto the liquid film, which ingredients induce a composition gradient at the liquid surface, resulting in a marangoni effect of the liquid;

convection by marangoni effect: the marangoni effect causes convection of the liquid at the interface of the liquid film, the liquid flowing from the high-component region to the low-component region, this convection process helping to remove moisture or other solutes in the liquid film from the wafer surface;

And (3) drying: the marangoni effect causes moisture in the liquid film to be effectively removed, so that the surface of the wafer is gradually dried, and the moisture in the liquid is taken away under the action of convection until the wafer reaches a required drying degree;

in general, ma Lanni lift drying technology utilizes the physical principle of marangoni effect, and induces a surface tension gradient at a liquid-wafer-air interface to induce liquid reflux in a liquid film, thereby realizing global drying of a wafer.

Referring to fig. 1, the wafer processing management system using marangoni effect according to the present embodiment includes a film monitoring module, an initiation monitoring module, a convection monitoring module, an environment monitoring module, a data processing module, a quality analysis module, an evaluation management module, and a warning control module;

When forming a liquid film on the surface of a wafer, the method is used for monitoring the uniformity index of the liquid film, and if the uniformity index of the liquid film is greater than or equal to the uniformity threshold value, sending an alarm signal to an alarm control module comprises the following steps:

and (3) data acquisition: the film monitoring module begins to collect data related to the uniformity of the liquid film via a sensor or monitoring device. Such data may include information on the thickness, temperature, composition distribution, flow rate, etc. of the liquid film.

Uniformity index calculation: using the collected data, the film monitoring module calculates a uniformity index of the liquid film. The uniformity index is typically a quantitative value that indicates the degree of uniformity of the liquid film across the wafer surface. This index may be calculated based on various parameters of the liquid film.

Threshold comparison: the film monitoring module compares the calculated uniformity index to a predetermined uniformity threshold. The uniformity threshold is preset and represents the minimum requirement for uniformity of the liquid film.

Triggering a warning signal: and if the calculated uniformity index is greater than or equal to the uniformity threshold, triggering a warning signal generation step by the film monitoring module.

Generating a warning signal: the film monitoring module generates an alert signal, which may take a variety of forms, such as an electronic signal, an audible alarm, a text message, etc., depending on the configuration of the system.

Sending an alarm signal: the generated alert signal is sent to an alert control module to notify a system operator or trigger further automated control measures. This ensures that when the uniformity of the liquid film is not satisfactory, timely action is taken to correct the problem, so as to avoid affecting the quality of the wafer.

Recording data: the film monitoring module will also typically record relevant data for subsequent analysis and quality traceability. This helps to understand the cause of the problem and to improve the process.

in the stage of the marangoni effect triggered by the wafer surface tension gradient, the method is used for monitoring the concentration deviation of the active ingredient, and if the concentration deviation of the active ingredient is greater than or equal to a deviation threshold value, the method sends an alarm signal to an alarm control module, and comprises the following steps:

and (3) data acquisition: data relating to the concentration of the active ingredient is initially collected by a sensor or analytical device. Such data is typically related to the liquid supply system or active ingredient injection.

Concentration deviation calculation: using the collected data, the system calculates the deviation of the active ingredient concentration. Deviation generally refers to the difference between the actual concentration and a predetermined target concentration.

Deviation threshold comparison: the calculated concentration deviation value is compared with a predetermined deviation threshold. The deviation threshold value is set in advance in the system configuration, representing the maximum allowable value of the density deviation.

Triggering a warning signal: and if the calculated concentration deviation is greater than or equal to a deviation threshold value, triggering the generation of a warning signal by the system.

Generating a warning signal: the system generates an alert signal, which may take a variety of forms, such as an electronic signal, an audible alarm, a text message, etc., depending on the configuration of the system.

Sending an alarm signal: the generated alert signal is sent to an alert control module to notify a system operator or trigger further automated control measures. This helps ensure that when the active ingredient concentration deviation exceeds a threshold, timely action is taken to adjust the supply system or other corrective action is taken to avoid affecting the generation of marangoni effect and the quality of the wafer.

Recording data: the system will also typically record the relevant data for subsequent analysis and quality traceability. This helps to understand the cause of the problem and to improve the process.

in a convection stage of marangoni effect on a wafer, for monitoring a convection speed float index, if the convection speed float index is greater than or equal to a float threshold, sending a warning signal to a warning control module, the method comprising the steps of:

and (3) data acquisition: data relating to the fluid velocity float index is initially collected by a sensor or monitoring device. Such data may include information on liquid flow rate, temperature, liquid film thickness, etc.

Calculating a floating index of the flow velocity: using the collected data, the system calculates a streaming velocity float index. This index is typically used to indicate the degree of change in convection velocity. The calculation of the floating index may be based on some statistical method, such as standard deviation or root mean square deviation.

Floating threshold comparison: the calculated floating index of the velocity of the stream is compared with a predetermined floating threshold. The float threshold is set in advance in the system configuration, representing the maximum allowable value of the flow velocity float.

Triggering a warning signal: and if the calculated floating index of the flow speed is larger than or equal to a floating threshold value, triggering the generation of the warning signal by the system.

Sending an alarm signal: the generated alert signal is sent to an alert control module to notify a system operator or trigger further automated control measures. This helps ensure that when the convection speed floats beyond a threshold, timely action is taken to adjust system parameters or other corrective action is taken to avoid affecting the quality of the wafer.

The warning control module: after receiving the warning signal, automatically controlling the processing equipment to stop running, sending an alarm prompt to an operator, after receiving the warning signal, checking and debugging the processing equipment which stops running until the processing equipment can support running after being tested, and then continuing to process the wafer;

And the environment monitoring module is used for: in the wafer processing process, the environment particulate matter concentration index of a processing workshop is monitored in real time, and the environment particulate matter concentration index is sent to a data processing module, and the method comprises the following steps:

and (3) sensor data acquisition: a series of environmental monitoring sensors are deployed in a process plant that can measure environmental parameters such as air quality, particle concentration, temperature, humidity, etc. The sensors collect data periodically or continuously.

And (3) data processing: the collected environmental data is transmitted to an environmental monitoring module, which performs real-time data processing. This may include data cleansing, calibration and statistical analysis to ensure accuracy and availability of the data.

Calculating an environmental particulate matter concentration index: based on the sensor data, the environmental monitoring module calculates an environmental particulate concentration index that can be used to represent the environmental quality of the process plant. This typically involves a comprehensive assessment of a plurality of factors of the environmental parameters.

And a data processing module: the method is used for preprocessing the uniformity index, the active ingredient concentration deviation, the flow speed floating index and the environment particulate matter concentration index and then sending the preprocessed result to the mass analysis module, and comprises the following steps of:

And (3) data receiving: the data processing module receives data from the uniformity monitoring module, the active ingredient monitoring module, the flow monitoring module, and the environment monitoring module. These data include uniformity index, active ingredient concentration bias, convection velocity float index, environmental particulate concentration index, and the like.

Data cleaning: the data processing module cleans the received data to remove outliers, missing data, or other inaccurate data. The wash data helps to ensure the accuracy of the subsequent analysis.

Data calibration: the data processing module calibrates the data, if necessary, to ensure that the data from different sources remain consistent in unit, scale or accuracy.

Data merging: the data processing module combines the data from the different monitoring modules into a comprehensive data set. This facilitates comprehensive analysis and quality assessment.

Data preprocessing: preprocessing operations, such as data smoothing, noise reduction, filtering, or feature extraction, are performed on the combined data. This helps prepare the data for quality analysis.

Data conversion: the data processing module may perform data conversion operations, such as normalization, or other mathematical transformations, to ensure that the data is compared and analyzed on the same scale.

And (3) data storage: the preprocessed data is stored for subsequent quality analysis and recording. The data storage may be temporary or may be used for long-term data archiving and analysis.

And a mass analysis module: after the wafer processing is completed, comprehensively analyzing the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environmental particulate matter concentration index, and then grading the quality of the wafer, wherein the quality grading result is sent to an evaluation management module and an operator.

And an evaluation management module: and periodically acquiring a quality grading result after the wafer is processed, evaluating the use state of the processing equipment according to the quality grading result, and sending the use state to an administrator, wherein the administrator carries out corresponding management on the processing equipment based on the use state.

The wafer quality classification method comprises the steps that a data processing module is used for preprocessing a uniformity index, an active ingredient concentration deviation, a convection speed floating index and an environment particulate matter concentration index, a quality analysis module is used for comprehensively analyzing the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environment particulate matter concentration index, then carrying out quality classification on the wafer, and a quality classification result is sent to an operator. The management system can monitor processing parameters affecting the quality of the wafer in real time in the processing process of the wafer, and timely sends out warning signals when the processing parameters are abnormal, so that an operator can manage the wafer conveniently, and the wafer is classified in quality after the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environmental particulate matter concentration index are comprehensively analyzed after the wafer processing is finished, so that the wafer which can be used but has lower quality is prevented from being used for a precise device.

According to the method and the device, the quality grading result of the processed wafer is obtained regularly through the evaluation management module, the use state of the processing equipment is evaluated according to the quality grading result, the use state is sent to the manager, and the manager carries out corresponding management on the processing equipment based on the use state, so that the manager can know the use state of the processing equipment conveniently, and the management efficiency of the processing equipment is improved.

Example 2: the quality analysis module comprehensively analyzes the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environment particulate matter concentration index after the wafer processing is finished, and then carries out quality classification on the wafer, and a quality classification result is sent to the evaluation management module and an operator;

when forming a liquid film on the surface of a wafer, a sensor and a monitoring device are generally used to monitor the uniformity of the film on line, and the uniformity index of the liquid film is generally a value for indicating the uniformity degree of the liquid film;

the uniformity index acquisition logic is:

，

in the method, in the process of the invention,indicating uniformity index,/->Indicating the maximum liquid film thickness in all monitoring points, < - >Indicating the minimum liquid film thickness in all monitoring points, < + >>Mean liquid film thickness;

the larger the uniformity index value, the more uneven the liquid film on the wafer surface, which will have the following effects on the wafer quality:

product non-uniformity: uneven liquid films can lead to manufacturing or processing non-uniformities on the wafer, which can lead to product non-uniformities that can be problematic in terms of performance, quality, and reliability, thereby reducing the overall quality of the product;

waste of materials: the uneven liquid film may require more material to meet manufacturing requirements, which not only increases cost, but also may result in material waste, reducing production efficiency;

process instability: uneven liquid films can lead to process instability, possibly leading to increased variability in the production process, which can lead to unpredictable results and inconsistent product quality;

product defects: non-uniformity of the liquid film may lead to manufacturing defects on the wafer, such as coating non-uniformity or composition non-uniformity, which may introduce defects in the product, reducing the usability and reliability of the product.

On-line monitoring of isopropanol concentration bias typically requires the use of specialized sensors and monitoring equipment to measure the concentration of isopropanol and use these data to calculate the active ingredient concentration bias as:

，

in the method, in the process of the invention,for the concentration deviation of active ingredient->For the actual concentration of isopropyl alcohol during wafer processing,is the standard concentration of isopropyl alcohol (i.e., the concentration required to process the wafer);

the larger the concentration deviation of the active ingredient is, the more the actual concentration of the isopropanol deviates from the standard concentration, and the following effects are caused on the wafer quality:

the process efficiency is reduced: isopropyl alcohol is an important component in many wafer processes for cleaning, dissolving and removing unwanted materials, and if the isopropyl alcohol concentration deviates from the standard concentration, the efficiency of the process may be reduced because more time or resources may be required for the reaction and cleaning;

quality inconsistency: the concentration of isopropyl alcohol is critical to control of the wafer process, and deviations in concentration may lead to inconsistent product quality, some of which may not meet specifications;

film quality problem: isopropyl alcohol plays an important role in the coating and film formation process, and incorrect concentrations can lead to film non-uniformity, cracking, or other quality problems;

Product contamination: deviations in the concentration of isopropyl alcohol may lead to accumulation of foreign or contaminating substances in the product, which may reduce the quality of the product.

The calculation expression of the convection speed floating index is:

，

in the method, in the process of the invention,indicating the convection speed floating index +.>For real-time change of convection speed +.>For the period of early warning of the viscosity of the fluid, +.>The time period is the temperature early warning time period;

the greater the convection velocity float index, the more unstable the convection velocity generated by the real-time processing, and the wafer is affected as follows:

the product quality is unstable: unstable convection speeds can lead to reduced uniformity of liquid films, coatings, or reactions on the wafer, making the product quality unstable, which can lead to inconsistent product performance or inconsistent product specifications;

process variability: instability of the convection speed may cause process instability, making process parameters difficult to control and predict, which increases the difficulty of product quality control;

product quality problems: unstable convection velocities can lead to non-uniform or non-uniform distribution in the reaction product, possibly introducing defects or quality problems;

the production efficiency is reduced: unstable convection speeds may require more time and resources to complete the process steps, thereby reducing production efficiency;

Waste of materials: due to the unstable convection velocity, more material may be required to compensate for the non-uniformity in the process, which may lead to material waste and increased costs;

equipment wear: unstable convection speeds may increase the load and wear of the equipment and may require more frequent maintenance and repair.

The acquisition logic of the fluid viscosity early warning period is as follows: the physical properties of the fluid can directly influence the convection speed, the higher the viscosity of the fluid is, the slower the convection speed is, the lower the viscosity of the fluid is, the faster the convection speed is, and in order to ensure the stability of the convection speed, the viscosity of the fluid needs to be controlled within a stable viscosity range, so that the period of the fluid viscosity outside the stable viscosity range is the period of the fluid viscosity early warning, and the convection speed at the period can be fast or slow and unstable;

the acquisition logic of the time period of the temperature early warning is as follows: the temperature change can obviously influence the density of the fluid, thereby influencing the convection speed, and in wafer processing, the stability of the convection speed is ensured by controlling the real-time temperature within a stable temperature range, so that the period of the real-time temperature which is not within the stable temperature range is the period of temperature early warning, and the convection speed of the period can be fast or slow and unstable.

The calculation expression of the environmental particulate matter concentration index is:

，

in the method, in the process of the invention,for the amount of particles measured by a particle monitoring device (e.g. particle counter) in an environmental monitoring module +.>A spatial volume that is a processing region;

the greater the index of the concentration of the environmental particulate matter, the greater the probability of being contaminated during the wafer processing, and the following problems are caused in the wafer quality:

surface contamination: the high concentration of particles in the environment may cause deposition of particles on the wafer surface, causing surface contamination, which may lead to unclean spots or particles on the wafer, affecting the surface quality of the wafer;

process defects: the presence of particulates may cause process defects during wafer processing, e.g., particulates may become embedded in films, coatings, or patterns, resulting in process failure or defect generation;

lithography problem: in semiconductor manufacturing, photolithography is a critical process step, and high particle concentrations can cause particles on the photolithographic mask, obscuring the pattern, thereby affecting the quality and performance of the wafer;

Quality problem of electronic components: contaminated wafers may cause defects to be introduced into the chip or electronic component, degrading the performance and reliability of the electronic component;

the cost rises: contamination on the wafer may lead to rework or processing of the process, which increases costs and reduces production efficiency;

yield is reduced: contamination-induced defects may lead to an increase in the rejection rate of wafers, thereby reducing yield;

product reliability decreases: contamination may lead to reliability problems for the electronic component or chip, which may lead to failure during product life or in actual use.

The quality analysis module comprehensively analyzes the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environment particulate matter concentration index after the wafer processing is finished, and then carries out quality classification on the wafer, and a quality classification result is sent to the evaluation management module and an operator;

the mass analysis module comprehensively calculates the uniformity index, the active ingredient concentration deviation, the convection speed floating index and the environment particulate matter concentration index to generate a mass coefficientThe expression is:

，

in the method, in the process of the invention,for uniformity index, ++>For the concentration deviation of active ingredient->For the convection speed float index +.>Is the index of the concentration of environmental particulate matters >、/>、/>、/>Proportional coefficients of uniformity index, active ingredient concentration deviation, convection speed floating index and environmental particulate matter concentration index, respectively, and +.>、/>、/>、/>Are all greater than 0;

by mass coefficientThe calculated expression of the respective parameter is known as the quality coefficient +.>The larger the value, the worse the quality of the processed wafer;

the mass analysis module obtains the mass coefficientAfter the value, the quality coefficient is->Comparing the value with a preset first quality threshold Z1, a preset second quality threshold Z2 and a preset third quality threshold Z3, wherein the first quality threshold Z1 is smaller than the second quality threshold Z2 and smaller than the third quality threshold Z3, so that the quality of the wafer is graded, and the grading result is shown in the table 1:

table 1 wafer quality grading table

，

As shown in table 1: if the quality coefficient isThe value is larger than or equal to a third quality threshold Z3, the quality of the analyzed wafer is unqualified, namely the wafer cannot be used, and the wafer is judged to be of four-level quality;

if the second mass threshold Z2 is less than or equal to the mass coefficientThe value is smaller than a third quality threshold Z3, the quality of the wafer is analyzed to be qualified, but the wafer has a small quality defect, and the wafer is judged to be three-level quality;

if the first mass threshold Z1 is less than or equal to the mass coefficientThe value is smaller than a second quality threshold Z2, the quality of the wafer is analyzed to be qualified, but the wafer has tiny quality defects, and the wafer is judged to be of secondary quality;

If the quality coefficient isThe value is smaller than a first quality threshold Z1, the quality of the wafer is analyzed to be qualified, no quality defect exists, and the wafer is judged to be of primary quality;

wherein:

first-order quality wafers are commonly used for manufacturing high-performance semiconductor devices such as microprocessors, memory chips, and high-frequency communication chips, for producing high-precision optical elements such as lasers, fiber-optic communication modules, and high-resolution microscopes, and for manufacturing high-sensitivity sensors such as photodiodes, semiconductor lasers, and image sensors;

secondary quality wafers are commonly used in the manufacture of general purpose semiconductor devices such as power management chips, analog circuits, and embedded controllers, in the manufacture of general purpose optical components such as lenses, and gratings for the production of conventional sensors and electronic components such as capacitors, resistors, and diodes;

three-level quality wafers are commonly used in the fabrication of low-requirement semiconductor devices, such as common digital logic integrated circuits, analog devices, and low-power sensors, in the fabrication of general-purpose optical components, such as fiber optic connectors, flat panel display lenses, and simple optical filters, for the fabrication of general electronic components, such as connectors, relays, and standard circuit boards;

The wafer with the quality of four stages is a wafer with the quality not reaching the standard, cannot be used and needs reworking or scrapping treatment.

The quality analysis module comprehensively calculates the uniformity index, the concentration deviation of the active ingredient, the floating index of the convection speed and the concentration index of the environmental particulate matters to generate the quality coefficient, so that the analysis is more comprehensive, and the data processing efficiency is effectively improved.

Example 3: the assessment management module periodically acquires a quality grading result after the wafer is processed, assesses the use state of the processing equipment according to the quality grading result, sends the use state to an administrator, and the administrator carries out corresponding management on the processing equipment based on the use state;

the evaluation management module acquires the quality coefficients of all wafers in the processing time period, establishes a quality coefficient set and calculates the quality coefficientsMean value of the mass coefficients within the set +.>And the discrete coefficient LQ, the mass coefficient average value +.>The number of the quality coefficients is equal to the sum of all the quality coefficients and then removed;

，

in the method, in the process of the invention,，/>representing the number of mass coefficients within a set of mass coefficients, < +.>Is a positive integer>Representing the i-th quality coefficient value within the quality coefficient set,>the average value of the quality coefficient is represented, the discrete coefficient LQ is used for representing the discrete degree of the quality coefficient of the wafer in the processing time period, and the smaller the discrete coefficient LQ value is, the smaller the variation amplitude of the quality coefficient of the wafer processed for multiple times is, and the stability is relatively high; the larger the discrete coefficient LQ value is, the larger the variation amplitude of the quality coefficient of the wafer processed for many times is, and the instability is shown;

Thus, if the mass coefficient is the average valueThe first quality threshold value Z1 is less than or equal to the discrete coefficient LQ threshold value, and the discrete coefficient LQ is less than or equal to the discrete coefficient LQ threshold value, so that the quality of all wafers processed by processing equipment is excellent;

if the mass coefficient is averageA first quality threshold Z1, and a discrete coefficient LQ > a discrete coefficient LQ threshold, indicating that the quality of the wafer processed by the processing equipment is good (there is a decrease in the quality of the partially processed wafer);

if the mass coefficient is averageThe quality of the wafer processed by processing equipment is medium (most of the quality is lower, and the other part of the quality is excellent) as shown by the fact that the quality of the wafer is not less than the first quality threshold Z1 and the discrete coefficient LQ is not less than the discrete coefficient LQ threshold;

When the quality of the wafer processed by the processing apparatus is good (there is a decrease in the quality of the partially processed wafer), the manager needs to manage the processing apparatus as follows:

monitoring and analyzing the source of the problem: first, the administrator should carefully monitor and analyze the specific sources of problems that result in degradation of some wafers, which may involve problems in equipment operation, material usage, processing conditions, etc., and identifying the root cause of the problem is critical to solving the quality problem;

And (3) equipment maintenance: ensuring that the processing equipment is regularly maintained and calibrated to ensure the normal operation and stability of the processing equipment;

operator training: providing operator training to ensure that they know the best method of operation of the device to reduce mishandling and misuse of the device;

improved process control: the processing technique is optimized to ensure stable process conditions, thereby improving the consistency of products.

When the quality of wafers processed by the processing apparatus is medium (most of the quality is low and the small part of the quality is good), an administrator needs to manage the processing apparatus as follows:

and (3) process adjustment: adjustments to the processing process are considered to improve the quality level of most wafers, which may involve parameter adjustments, material changes, or other process optimizations;

checking equipment: periodically checking the state and performance of the processing equipment to ensure its normal operation and maintenance;

product improvement: improvements in wafer fabrication processes and processes are considered where possible to increase overall quality levels.

When the total mass of all wafers processed by the processing apparatus is different, an administrator needs to perform the following management on the processing apparatus:

emergency maintenance: immediately carrying out emergency maintenance and repair on processing equipment so as to solve the current quality problem;

Comprehensive examination: performing a thorough review, including equipment, processes, and materials, to find out why the overall quality is degraded;

and (3) redesigning the process: consider redesigning the process to ensure a higher level of quality;

training and quality control: staff training is provided, stricter quality control measures are implemented, and quality problems are guaranteed to be better managed.

In the prior art, the quality of the wafer is detected by the defect detection system after the wafer is processed, and the detection result is divided into a qualified wafer and an unqualified wafer, however, because the wafer tiny defects caused by the processing process are undetectable by the defect detection system, the tiny defects cannot cause the wafer to be unusable, but the product precision made of the tiny wafer can be reduced, or the service life can be shortened, and if the wafer with the tiny defects is used on a high-load product, the damage of the wafer can be aggravated, so that the wafer quality is more effectively analyzed by evaluating the process defects.

The above formulas are all formulas with dimensions removed and numerical values calculated, the formulas are formulas with a large amount of data collected for software simulation to obtain the latest real situation, and preset parameters in the formulas are set by those skilled in the art according to the actual situation.

The above embodiments may be implemented in whole or in part by software, hardware, firmware, or any other combination. When implemented in software, the above-described embodiments may be implemented in whole or in part in the form of a computer program product. The computer program product comprises one or more computer instructions or computer programs. When the computer instructions or computer program are loaded or executed on a computer, the processes or functions described in accordance with the embodiments of the present application are all or partially produced. The computer may be a general purpose computer, a special purpose computer, a computer network, or other programmable apparatus.

It should be understood that the term "and/or" is merely an association relationship describing the associated object, and means that three relationships may exist, for example, a and/or B may mean: there are three cases, a alone, a and B together, and B alone, wherein a, B may be singular or plural. In addition, the character "/" herein generally indicates that the associated object is an "or" relationship, but may also indicate an "and/or" relationship, and may be understood by referring to the context.

In the present application, "at least one" means one or more, and "a plurality" means two or more. "at least one of" or the like means any combination of these items, including any combination of single item(s) or plural items(s). For example, at least one (one) of a, b, or c may represent: a, b, c, a-b, a-c, b-c, or a-b-c, wherein a, b, c may be single or plural.

It should be understood that, in various embodiments of the present application, the sequence numbers of the foregoing processes do not mean the order of execution, and the order of execution of the processes should be determined by the functions and internal logic thereof, and should not constitute any limitation on the implementation process of the embodiments of the present application.

Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.

It will be clear to those skilled in the art that, for convenience and brevity of description, specific working procedures of the above-described systems, apparatuses and units may refer to corresponding procedures in the foregoing method embodiments, and are not repeated herein.

The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A wafer processing management system applying marangoni effect is characterized in that: the system comprises a film monitoring module, an initiation monitoring module, a convection monitoring module, an environment monitoring module, a data processing module, a quality analysis module, an evaluation management module and a warning control module;

2. A wafer processing management system employing marangoni effect as defined in claim 1, wherein: the mass analysis module comprehensively calculates uniformity index, active ingredient concentration deviation, convection speed floating index and environment particulate matter concentration index to generate a mass coefficientThe expression is:

，

in the method, in the process of the invention,for uniformity index, ++ >For the concentration deviation of active ingredient->In order to float the index of the velocity of convection,is the index of the concentration of environmental particulate matters>、/>、/>、/>Proportional coefficients of uniformity index, active ingredient concentration deviation, convection speed floating index and environmental particulate matter concentration index, respectively, and +.>、/>、/>、/>Are all greater than 0.

3. A wafer processing management system employing marangoni effect as defined in claim 2, wherein: the mass analysis module obtains a mass coefficientAfter the value, the quality coefficient is->Comparing the value with a preset first quality threshold Z1, a preset second quality threshold Z2 and a preset third quality threshold Z3, wherein the first quality threshold Z1 is smaller than the second quality threshold Z2 and smaller than the third quality threshold Z3, and classifying the quality of the wafer.

4. A wafer processing management system employing marangoni effect as defined in claim 3, wherein: if the quality coefficient of the waferThe value is larger than or equal to a third quality threshold Z3, the quality of the analyzed wafer is unqualified, namely the wafer cannot be used, and the wafer is judged to be of four-level quality;

if the second quality threshold Z2 of the wafer is less than or equal to the quality coefficientThe value is smaller than a third quality threshold Z3, the quality of the wafer is analyzed to be qualified, but the wafer has a small quality defect, and the wafer is judged to be three-level quality;

5. A wafer processing management system employing marangoni effect as defined in claim 2, wherein: the uniformity index obtaining logic is as follows:

，

in the method, in the process of the invention,for the concentration deviation of active ingredient->Is the actual concentration of isopropanol during wafer processing, +.>Is the standard concentration of isopropanol.

6. A wafer processing management system employing marangoni effect as defined in claim 2, wherein: the calculation expression of the flow velocity floating index is as follows:

，

In the method, in the process of the invention,indicating the convection speed floating index +.>For real-time change of convection speed +.>For the period of early warning of the viscosity of the fluid, +.>Is the time period of temperature early warning.

7. The wafer processing management system utilizing marangoni effect as defined in claim 6, wherein: the calculation expression of the environmental particulate matter concentration index is as follows:

，

8. A wafer processing management system employing marangoni effect as defined in claim 7, wherein: the acquisition logic of the fluid viscosity early warning period is as follows: the time period when the fluid viscosity is out of the stable viscosity range is the time period of fluid viscosity early warning;

9. A wafer processing management system employing marangoni effect as defined in claim 2, wherein: the evaluation management module acquires the quality coefficients of all wafers in the processing time period, establishes a quality coefficient set and calculates the quality coefficients Mean value of the mass coefficients within the set +.>And the discrete coefficient LQ, the mass coefficient average value +.>The number of the quality coefficients is equal to the sum of all the quality coefficients and then removed;

，

10. A wafer processing management system employing marangoni effect as defined in claim 9, wherein: if the mass coefficient is averageThe first quality threshold value Z1 is less than or equal to the discrete coefficient LQ threshold value, and the discrete coefficient LQ is less than or equal to the discrete coefficient LQ threshold value, so that the quality of all wafers processed by processing equipment is excellent;