CN117310878A - Polarization rotating structure based on thin film lithium niobate optical waveguide - Google Patents
Polarization rotating structure based on thin film lithium niobate optical waveguide Download PDFInfo
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- CN117310878A CN117310878A CN202311487637.3A CN202311487637A CN117310878A CN 117310878 A CN117310878 A CN 117310878A CN 202311487637 A CN202311487637 A CN 202311487637A CN 117310878 A CN117310878 A CN 117310878A
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 230000003287 optical effect Effects 0.000 title claims abstract description 49
- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 230000010287 polarization Effects 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 4
- 239000000463 material Substances 0.000 abstract description 18
- 238000013461 design Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0338—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect structurally associated with a photoconductive layer or having photo-refractive properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to the technical field of optical waveguides, and particularly relates to a polarization rotation structure based on a thin film lithium niobate optical waveguide, which comprises the following components: the waveguide structure comprises a BOX layer and a thin-film lithium niobate optical waveguide flat plate area, wherein the top end of the BOX layer is fixedly connected with the bottom end of the thin-film lithium niobate optical waveguide flat plate area, the middle part of the top end of the thin-film lithium niobate optical waveguide flat plate area is fixedly connected with a waveguide ridge along the length direction, and a groove is formed in the part of the thin-film lithium niobate optical waveguide flat plate area, which is positioned on one side of the waveguide ridge. The invention adopts the thin film lithium niobate optical waveguide flat plate area made of the thin film lithium niobate material, fully utilizes the birefringence characteristic of the thin film lithium niobate material on the design of the waveguide structure, compensates the birefringence of the thin film lithium niobate material and the structure, thereby realizing the polarization rotation function of the fundamental mode in a single waveguide, and having a simpler waveguide structure compared with similar devices.
Description
Technical Field
The invention belongs to the technical field of optical waveguides, and particularly relates to a polarization rotating structure based on a thin film lithium niobate optical waveguide.
Background
The polarization rotation device is a type of optical component that changes the polarization state of a mode transmitted in a waveguide through an on-chip optical waveguide device. It is capable of converting an input TE polarization mode to an output TM mode or an input TM polarization mode to an output TE mode. The polarization component of the light wave can be regulated and controlled on the chip by utilizing the polarization rotating device, so that a series of functional applications related to optical signal processing such as polarization multiplexing, polarization beam splitting, coherent modulation and detection are realized.
Conventional polarization beam splitters are often implemented by relatively complex sets of waveguide devices, such as asymmetric directional couplers and adiabatic taper waveguides, and utilize higher order modes as "bridges" to achieve conversion between fundamental mode polarization states. The conventional structure is complex, and the cost is high for practical application, so that a structure which is simpler and can realize the polarization rotation function of the fundamental mode is needed to solve the existing problems.
Disclosure of Invention
The invention aims to provide a polarization rotation structure based on a thin film lithium niobate optical waveguide, so as to solve the problems, and achieve the purpose of utilizing the birefringence characteristic of a thin film lithium niobate material and compensating with the structure birefringence, thereby realizing the polarization rotation function of a fundamental mode in a single waveguide.
In order to achieve the above object, the present invention provides the following solutions:
a polarization rotating structure based on a thin film lithium niobate optical waveguide, comprising: the waveguide structure comprises a BOX layer and a thin-film lithium niobate optical waveguide flat plate area, wherein the top end of the BOX layer is fixedly connected with the bottom end of the thin-film lithium niobate optical waveguide flat plate area, a waveguide ridge is fixedly connected with the middle of the top end of the thin-film lithium niobate optical waveguide flat plate area along the length direction, the width of the left end of the waveguide ridge is smaller than that of the right end, a slot is formed in the part, located on one side of the waveguide ridge, of the thin-film lithium niobate optical waveguide flat plate area, the input end of the waveguide structure is located at the left end of the waveguide structure, and the output end of the waveguide structure is located at the right end of the waveguide structure.
Preferably, the slotting comprises a first trapezoid slotting region, a square slotting region and a second trapezoid slotting region, and the first trapezoid slotting region, the square slotting region and the second trapezoid slotting region are communicated with each other;
the waveguide structure is divided into a first symmetrical ridge waveguide area, a first gradual change asymmetrical ridge waveguide area, a first asymmetrical ridge waveguide area, a second gradual change asymmetrical ridge waveguide area and a second symmetrical ridge waveguide area from left to right in sequence, the first trapezoid slotting area is arranged in the first gradual change asymmetrical ridge waveguide area, the square slotting area is arranged in the asymmetrical ridge waveguide area, and the second trapezoid slotting area is arranged in the second gradual change asymmetrical ridge waveguide area.
Preferably, the width of the thin film lithium niobate optical waveguide plate region extending along the two sides of the waveguide ridge is more than or equal to 3 μm.
Preferably, a distance between the square grooved region and the waveguide ridge in the asymmetric ridge waveguide region is 0.5 μm or less.
The width of the part of the waveguide ridge in the first symmetrical ridge waveguide area and the first gradual change asymmetric ridge waveguide area is smaller than that of the part of the waveguide ridge in the second gradual change asymmetric ridge waveguide area and the second symmetrical ridge waveguide area, and the width of the part of the waveguide ridge in the asymmetric ridge waveguide area gradually increases from left to right.
Preferably, the BOX layer is a silicon oxide buried oxide layer.
Preferably, the thickness of the thin film lithium niobate optical waveguide slab region is between 500 and 900 nm.
Compared with the prior art, the invention has the following advantages and technical effects:
the invention adopts the thin film lithium niobate optical waveguide flat plate area made of the thin film lithium niobate material, fully utilizes the birefringence characteristic of the thin film lithium niobate material on the design of the waveguide structure, compensates the birefringence of the thin film lithium niobate material and the structure, thereby realizing the polarization rotation function of the fundamental mode in a single waveguide, and having a simpler waveguide structure compared with similar devices.
Drawings
For a clearer description of an embodiment of the invention or of the solutions of the prior art, the drawings that are needed in the embodiment will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art:
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a top plan view of the invention, with like numerals being different;
FIG. 4 is a cross-sectional view of the present invention;
FIG. 5 is a schematic diagram showing the correspondence between the refractive index of the material and the orientation of the coordinate system in the present invention;
FIG. 6 is a graph of the results obtained by the present invention through simulation software.
Reference numerals: 1. symmetric ridge waveguide region one; 2. graded asymmetric ridge waveguide region one; 3. an asymmetric ridge waveguide region; 4. graded asymmetric ridge waveguide region II; 5. symmetrical ridge waveguide region two; 101. a thin film lithium niobate optical waveguide slab region; 102. a BOX layer; 103. a waveguide ridge; 104. slotting; 105. an input end; 106. an output end; 107. a substrate layer; 11. a first trapezoidal slotted region; 12. square slotting area; 13. a second trapezoidal slotted region.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1 to 6, a polarization rotating structure based on a thin film lithium niobate optical waveguide includes: the waveguide structure comprises a BOX layer 102 and a thin-film lithium niobate optical waveguide flat plate area 101, wherein the top end of the BOX layer 102 is fixedly connected with the bottom end of the thin-film lithium niobate optical waveguide flat plate area 101, the middle part of the top end of the thin-film lithium niobate optical waveguide flat plate area 101 is fixedly connected with a waveguide ridge 103 along the length direction, the width of the left end of the waveguide ridge 103 is smaller than that of the right end, a slot 104 is formed in the part, located on one side of the waveguide ridge 103, of the thin-film lithium niobate optical waveguide flat plate area 101, the input end of the waveguide structure is located at the left end of the waveguide structure, and the output end of the waveguide structure is located at the right end of the waveguide structure.
The invention adopts the thin film lithium niobate optical waveguide flat plate region 101 made of the thin film lithium niobate material, fully utilizes the birefringence characteristic of the thin film lithium niobate material on the design of the waveguide structure, compensates the birefringence of the thin film lithium niobate material and the structure, thereby realizing the polarization rotation function of the fundamental mode in a single waveguide, and having a simpler waveguide structure compared with similar devices.
The thickness of the BOX layer 102 is preferably not less than 2um, and a substrate layer 107 is provided at the bottom end of the BOX layer 102, and the material is silicon, quartz or lithium niobate, and the thickness is more than 300um (part of the substrate layer 107 in fig. 1).
As shown in fig. 1 and 4, the direction along the length of the waveguide structure is the Y-axis direction, the direction along the width of the waveguide structure is the Z-axis direction, and the direction along the height of the waveguide structure is the X-axis direction.
The thin film lithium niobate has material birefringence characteristics, wherein for lithium niobate of X-CUT, the material refractive index of TE polarization mode in the waveguide corresponds to the material refractive index ne shown in fig. 5, and lower than the material refractive index no shown in fig. 5 when the waveguide is transported in the Y direction.
On the other hand, for the etched ridge waveguide structure, the TE polarization mode has a higher structural refractive index than the TM polarization mode, so that the effective refractive indexes (the combined effect of the material refractive index and the structural refractive index) of the TE mode and the TM mode in the waveguide are very close, and the mode refractive indexes of the TE mode and the TM mode at the communication wavelength can be almost consistent through reasonable waveguide structure design.
On the basis, the mode hybridization of the TE and TM polarized fundamental mode can be realized by destroying the symmetry of the waveguide structure (for example, the width of a flat plate area waveguide on one side is reduced), and then the rotation function of the fundamental mode can be realized by a section of waveguide with gradually changed width.
By means of the arrangement of the structures, the optical waveguide structure skillfully achieves the effect of rotation of the fundamental mode, and compared with the complex structure arrangement adopted in the prior art, the optical waveguide structure is simpler in structure.
The nature of this property employed in the present invention is not achievable on isotropic materials such as silicon, silicon nitride platforms, and can be achieved by the thin film lithium niobate employed in the present invention.
In a further optimized scheme, the slotting 104 comprises a first trapezoid slotting region 11, a square slotting region 12 and a second trapezoid slotting region 13, wherein the first trapezoid slotting region 11, the square slotting region 12 and the second trapezoid slotting region 13 are communicated with each other;
the waveguide structure is divided into a first symmetrical ridge waveguide area 1, a first gradual change asymmetrical ridge waveguide area 2, an asymmetrical ridge waveguide area 3, a second gradual change asymmetrical ridge waveguide area 4 and a second symmetrical ridge waveguide area 5 in sequence from left to right, a first trapezoid slotting area 11 is arranged in the first gradual change asymmetrical ridge waveguide area 2, a square slotting area 12 is arranged in the asymmetrical ridge waveguide area 3, and a second trapezoid slotting area 13 is arranged in the second gradual change asymmetrical ridge waveguide area 4.
Further optimizing scheme, the width of the thin film lithium niobate optical waveguide flat plate region 101 extending along the two sides of the waveguide ridge 103 is more than or equal to 3 μm.
Further optimizing scheme, the distance between the square slotted zone 12 and the waveguide ridge 103 in the asymmetric ridge waveguide zone 3 is less than or equal to 0.5 μm.
In this case, since the width of the portion of the waveguide ridge 103 located in the asymmetric ridge waveguide region 3 becomes gradually larger from left to right, in practice, the width of the thin film lithium niobate optical waveguide slab region 101 in the portion of the asymmetric ridge waveguide region 3 becomes gradually wider, but the distance between the square grooved region 12 and the waveguide ridge 103 remains 0.5 μm or less.
In a further optimization scheme, the width of the part of the waveguide ridge 103 in the first symmetrical ridge waveguide area 1 and the first gradual change asymmetric ridge waveguide area 2 is smaller than the width of the part of the waveguide ridge 103 in the second gradual change asymmetric ridge waveguide area 4 and the second symmetrical ridge waveguide area 5, and the width of the part of the waveguide ridge 103 in the second asymmetrical ridge waveguide area 3 gradually increases from left to right.
This structure corresponds to the width W1 of the portion of the waveguide ridge 103 located in the first symmetric ridge waveguide region 1 and the first tapered asymmetric ridge waveguide region 2, the width W1 of the portion of the waveguide ridge 103 located in the asymmetric ridge waveguide region 3, the width W2 of the right end, and the width W2 of the portion of the waveguide ridge 103 located in the second tapered asymmetric ridge waveguide region 4 and the second symmetric ridge waveguide region 5, and W1< W2.
Further preferably, BOX layer 102 is a silicon oxide buried oxide layer.
Further optimizing scheme, the thickness of the thin film lithium niobate optical waveguide flat plate region 101 is 500-900 nm.
Referring to fig. 6, shown in fig. 6 is an intra-waveguide optical field transmission profile calculated by optical simulation software, which is FDTD Solutions optical simulation software.
Wherein the input TM0 mode gradually increases in z-direction component and gradually decreases in x-direction component as it propagates along the waveguide, i.e., it is reflected that the mode gradually rotates from TM fundamental mode (i.e., TM 0) to TE fundamental mode (i.e., TE 0).
Referring to the case shown in fig. 6, it is apparent that as the light travels from the input end 105 to the output end 106, the detected result of Ez deflection along the Z axis is gradually increased, the detected result of Ex deflection along the X axis is gradually decreased, and the detected situation approaches 0 near the output end 106.
According to the simulation result, the conversion efficiency is higher than 98.8%.
In the description of the present invention, it should be understood that the terms "longitudinal," "transverse," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate description of the present invention, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
The above embodiments are only illustrative of the preferred embodiments of the present invention and are not intended to limit the scope of the present invention, and various modifications and improvements made by those skilled in the art to the technical solutions of the present invention should fall within the protection scope defined by the claims of the present invention without departing from the design spirit of the present invention.
Claims (7)
1. A polarization rotating structure based on a thin film lithium niobate optical waveguide, comprising: waveguide structure, waveguide structure includes BOX layer (102), film lithium niobate optical waveguide flat board district (101), BOX layer (102) top with film lithium niobate optical waveguide flat board district (101) bottom fixed connection, film lithium niobate optical waveguide flat board district (101) top middle part is along length direction fixedly connected with waveguide ridge (103), waveguide ridge (103) left end's width is less than the width of right-hand member, film lithium niobate optical waveguide flat board district (101) are located offer fluting (104) in the part of waveguide ridge (103) one side, waveguide structure's input is located waveguide structure left end, waveguide structure's output is located waveguide structure right-hand member.
2. The polarization rotating structure based on the thin film lithium niobate optical waveguide according to claim 1, wherein the slot (104) comprises a first trapezoid slot area (11), a square slot area (12) and a second trapezoid slot area (13), and the first trapezoid slot area (11), the square slot area (12) and the second trapezoid slot area (13) are mutually communicated;
the waveguide structure is divided into a first symmetrical ridge waveguide area (1), a first gradual change asymmetrical ridge waveguide area (2), a second asymmetrical ridge waveguide area (3), a second gradual change asymmetrical ridge waveguide area (4) and a second symmetrical ridge waveguide area (5) from left to right in sequence, a first trapezoid slotting area (11) is arranged in the first gradual change asymmetrical ridge waveguide area (2), a square slotting area (12) is arranged in the first asymmetrical ridge waveguide area (3), and a second trapezoid slotting area (13) is arranged in the second gradual change asymmetrical ridge waveguide area (4).
3. The polarization rotating structure based on the thin film lithium niobate optical waveguide according to claim 2, wherein the width of the thin film lithium niobate optical waveguide slab region (101) extending in the directions of both sides of the waveguide ridge (103) is 3 μm or more.
4. A polarization rotating structure based on a thin film lithium niobate optical waveguide according to claim 2, characterized in that the distance between the square grooved region (12) and the waveguide ridge (103) in the asymmetric ridge waveguide region (3) is 0.5 μm or less.
5. The polarization rotating structure based on the thin film lithium niobate optical waveguide according to claim 2, wherein the width of the portion of the waveguide ridge (103) located in the first symmetrical ridge waveguide region (1) and the first gradually-changed asymmetrical ridge waveguide region (2) is smaller than the width of the portion of the waveguide ridge (103) located in the second gradually-changed asymmetrical ridge waveguide region (4) and the second symmetrical ridge waveguide region (5), and the width of the portion of the waveguide ridge (103) located in the second asymmetrical ridge waveguide region (3) is gradually increased from left to right.
6. The polarization rotating structure based on thin film lithium niobate optical waveguide according to claim 1, wherein the BOX layer (102) is a silicon oxide buried oxide layer.
7. A polarization rotating structure based on a thin film lithium niobate optical waveguide according to claim 1, wherein the thin film lithium niobate optical waveguide slab region (101) has a thickness of between 500 and 900 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311487637.3A CN117310878A (en) | 2023-11-09 | 2023-11-09 | Polarization rotating structure based on thin film lithium niobate optical waveguide |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311487637.3A CN117310878A (en) | 2023-11-09 | 2023-11-09 | Polarization rotating structure based on thin film lithium niobate optical waveguide |
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| Publication Number | Publication Date |
|---|---|
| CN117310878A true CN117310878A (en) | 2023-12-29 |
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| CN202311487637.3A Pending CN117310878A (en) | 2023-11-09 | 2023-11-09 | Polarization rotating structure based on thin film lithium niobate optical waveguide |
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- 2023-11-09 CN CN202311487637.3A patent/CN117310878A/en active Pending
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