CN117300888A - Chemical mechanical polishing pad, polishing platform and polishing device - Google Patents

Chemical mechanical polishing pad, polishing platform and polishing device Download PDF

Info

Publication number
CN117300888A
CN117300888A CN202311475195.0A CN202311475195A CN117300888A CN 117300888 A CN117300888 A CN 117300888A CN 202311475195 A CN202311475195 A CN 202311475195A CN 117300888 A CN117300888 A CN 117300888A
Authority
CN
China
Prior art keywords
polishing pad
polishing
chemical mechanical
pad body
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311475195.0A
Other languages
Chinese (zh)
Inventor
崔云承
张康
王磊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Jingyi Precision Technology Co ltd
Original Assignee
Beijing Jingyi Precision Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Jingyi Precision Technology Co ltd filed Critical Beijing Jingyi Precision Technology Co ltd
Priority to CN202311475195.0A priority Critical patent/CN117300888A/en
Publication of CN117300888A publication Critical patent/CN117300888A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention provides a chemical mechanical polishing pad, a polishing platform and a polishing device, which belong to the technical field of chemical mechanical polishing and comprise: the polishing pad comprises a polishing pad body, wherein the polishing pad body adopts a single-layer structure, the upper surface of the polishing pad body is used for polishing a workpiece to be polished, and the upper surface of the polishing pad body is provided with a groove for storing polishing liquid; when the polishing pad is used, the upper surface of the polishing pad body is in contact with a workpiece to be polished and mechanically rubs, meanwhile, the polishing liquid stored in the groove and the surface of the workpiece to be polished are subjected to chemical reaction to increase the polishing efficiency, and the single-layer structure polishing pad body is adopted to remove a buffer layer with larger compression variable, so that the whole compression variable is smaller, and the planarization of the surface of the workpiece to be polished can be improved during polishing operation; the chemical mechanical polishing pad solves the problem that the flattening effect of the processing surface of a wafer is easily affected due to the large compression variable of the buffer layer when the stack type polishing pad in the prior art is used.

Description

Chemical mechanical polishing pad, polishing platform and polishing device
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to a chemical mechanical polishing pad, a polishing platform and a polishing device.
Background
Chemical mechanical polishing (Chemical Mechanical Planarization, CMP) is a polishing process that uses a combination of chemistry and machinery to remove excess material from a wafer to a target thickness on a semiconductor wafer and to obtain a highly planarized surface on the wafer. The two most critical process consumables in the CMP process are a polishing pad and a polishing liquid, which can chemically react with the wafer surface to increase the polishing efficiency, and the polishing pad is used to polish the wafer.
The current common grinding pad is formed by bonding and connecting and combining a contact layer and a buffer layer after stacking, wherein the contact layer has high density and is used for contact grinding with a wafer; the buffer layer has smaller density and larger elasticity. During operation, the wafer and the polishing pad body rotate and the wafer horizontally moves on the polishing pad body, and the mechanical and chemical actions between the wafer surface processing layer, the polishing pad body and the polishing liquid are utilized to remove the wafer surface deposition layer and planarize the wafer processing surface.
However, when polishing a wafer, since the density of the buffer layer is small, the polishing pad receives pressure and simultaneously reacts, resulting in a large compression variation, which easily affects the planarization effect of the wafer processing surface.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the problem that the flattening effect of the processing surface of the wafer is easily affected due to the larger compression variable of the buffer layer when the stack-type polishing pad in the prior art is used, so as to provide the chemical mechanical polishing pad, the polishing platform and the polishing device.
In order to solve the above-mentioned problems, the present invention provides a chemical mechanical polishing pad, comprising: the polishing pad comprises a polishing pad body, wherein the polishing pad body is of a single-layer structure and has a thickness of 75-85mil, the upper surface of the polishing pad body is used for polishing a piece 4 to be polished, and the upper surface of the polishing pad body is provided with a groove for storing polishing liquid.
Optionally, the polishing pad body has a density of 0.5-0.8 g/cm 3 。
Optionally, the polishing pad body has a density of 0.6-0.7 g/cm 3 。
Optionally, the expanded microsphere size of the holes generated by the grinding pad body is 10-40 um.
Optionally, the size of the foaming microsphere with the holes formed in the grinding pad body is 10-30 um.
Optionally, the groove is a through groove with two open ends.
Optionally, the groove is a straight bar-shaped groove.
Optionally, the grooves are disposed on the upper surface of the polishing pad body in a cross grid structure.
Optionally, the spacing between adjacent two of the grooves is between 600 and 1600 mils.
Optionally, the spacing between adjacent two of the grooves is between 700 and 900 mils.
Optionally, the grooves have a depth of between 15 and 45 mils and a width of between 10 and 80 mils.
Optionally, the grooves have a depth of between 30 and 40 mils and a width of between 65 and 80 mils.
The present invention provides an abrasive platform comprising: the chemical mechanical polishing pad according to any one of the above aspects, wherein the chemical mechanical polishing pad is fixed on the polishing platen by a paste.
The invention provides a grinding device, which comprises the grinding platform in the scheme.
The technical scheme of the invention has the following advantages:
1. when the chemical mechanical polishing pad provided by the invention is used, the upper surface of the polishing pad body is in contact with a workpiece to be polished and mechanically rubbed, meanwhile, the polishing liquid stored in the groove and the surface of the workpiece to be polished are subjected to chemical reaction to increase the polishing efficiency, and the single-layer structure polishing pad body is adopted, so that a buffer layer with larger compression variable is removed, compared with the traditional stacked polishing pad, the single-layer structure polishing pad has a smaller compression ratio and has a thickness of 78-85mil, the integral compression variable is smaller, and the planarization of the surface of the workpiece to be polished can be improved during polishing operation; the chemical mechanical polishing pad solves the problem that the flattening effect of the processing surface of a wafer is easily affected due to the large compression variable of the buffer layer when the stack type polishing pad in the prior art is used.
2. The chemical mechanical polishing pad provided by the invention has the density of 0.5-0.8 g/cm 3 The hardness of the polishing pad body is reduced, and adverse effects of poor surface processing uniformity and scratch of a workpiece to be polished, which are caused by no buffer layer, can be counteracted.
3. The chemical mechanical polishing pad provided by the invention has the preferable density of 0.6-0.7 g/cm 3 The polishing pad body is made of the material, and adverse effects of poor surface processing uniformity and scratch of the workpiece to be polished, which are caused by no buffer layer, can be better counteracted.
4. According to the chemical mechanical polishing pad provided by the invention, the holes on the polishing pad body are formed by the foaming microspheres with the size of 10-40um, so that the roughness of the surface of the polishing pad body can be reduced, the contact area between the surface of the polishing pad body and the processing surface of a workpiece to be polished is increased, the removal rate is improved, and the scratch condition of the surface of the workpiece to be polished is reduced.
5. The chemical mechanical polishing pad provided by the invention, preferably, the foaming microsphere with the size of 10-30um generates holes on the polishing pad body, so that the roughness of the surface of the polishing pad body can be reduced, the contact area between the surface of the polishing pad body and the processing surface of a workpiece to be polished is increased, the removal rate is improved, and the surface scratch of the workpiece to be polished is reduced.
6. According to the chemical mechanical polishing pad provided by the invention, the grooves are arranged as the through grooves with the two ends open, and the processing byproducts can be taken away through the fluid transmission of the polishing liquid in the grooves, so that the processing defects on the surface of a workpiece to be polished are reduced.
7. The chemical mechanical polishing pad provided by the invention has the advantages that the transmission speed of the polishing liquid in the groove can be improved through the straight groove, the processing byproducts can be rapidly taken away, and the processing defects on the surface of a workpiece to be polished are reduced.
8. According to the chemical mechanical polishing pad provided by the invention, the grooves on the upper surface of the polishing pad body are arranged in the cross square structure, so that the storage capacity of the polishing liquid in the grooves can be improved, the processing byproducts can be quickly taken away by means of fluid, the removal rate is improved, and the surface scratches of a workpiece to be polished are reduced.
9. The chemical mechanical polishing pad provided by the invention has the advantages that the distance between two adjacent grooves is controlled to be 600-1600mil, and the contact area between the polishing pad body and the processing surface of a workpiece to be polished is increased, and meanwhile, the liquid film content between the polishing pad body and the workpiece to be polished is increased, so that the removal rate is improved, and the surface scratch of the workpiece to be polished is reduced.
10. The chemical mechanical polishing pad provided by the invention has the advantages that the distance between two adjacent grooves is preferably controlled to be 700-900 mil, and the contact area between the polishing pad body and the processing surface of the workpiece to be polished is increased, and meanwhile, the liquid film content between the polishing pad body and the workpiece to be polished is increased, so that the removal rate is improved, and the surface scratch of the workpiece to be polished is reduced.
11. The chemical mechanical polishing pad provided by the invention has the advantages that the depth of the groove is set to be between 15 and 45mil, and the width of the groove is set to be between 10 and 80mil, so that the storage capacity of polishing liquid in the groove and the removal capacity of processing byproducts can be improved.
12. The chemical mechanical polishing pad provided by the invention has the advantages that the depth of the groove is set to be between 30 and 40mil, and the width of the groove is set to be between 65 and 80mil, so that the storage capacity of polishing liquid in the groove and the removal capacity of processing byproducts can be improved.
13. The polishing platform provided by the invention has the advantages that the chemical mechanical polishing pad is fixed on the polishing platform through the adhesive and is used for polishing a workpiece to be polished, and any one of the advantages is achieved due to the adoption of the chemical mechanical polishing pad.
14. The polishing device provided by the invention has any one of the advantages because the polishing platform is adopted.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an embodiment of a chemical mechanical polishing pad according to an embodiment of the present invention;
FIG. 2 is a schematic view of the polishing pad body of FIG. 1;
fig. 3 is a schematic top view of the polishing pad body of fig. 1.
Reference numerals illustrate:
1. a polishing pad body; 2. a groove; 3. grinding fluid; 4. a piece to be ground; 5. holes.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The embodiment provides a chemical mechanical polishing pad capable of improving planarization, which is used for polishing.
As shown in fig. 1, a specific implementation manner of a chemical mechanical polishing pad provided in this embodiment includes: the polishing pad comprises a polishing pad body 1, wherein the polishing pad body 1 adopts a single-layer structure, the thickness is 75-85mil, the upper surface of the polishing pad body 1 is used for polishing a piece 4 to be polished, and the upper surface of the polishing pad body 1 is provided with a groove 2 for storing polishing liquid 3.
When the polishing pad is used, the upper surface of the polishing pad body 1 is in contact with a workpiece 4 to be polished and mechanically rubs, meanwhile, the polishing liquid 3 stored in the groove 2 and the surface of the workpiece 4 to be polished generate chemical reaction to increase polishing efficiency, and the buffer layer with larger compression variable is removed by adopting the single-layer structure of the polishing pad body 1, compared with the traditional stacked polishing pad, the polishing pad has smaller compression ratio and the thickness of 78-85mil, and the whole compression variable is smaller, so that the planarization of the surface of the workpiece 4 to be polished can be improved during polishing operation; the chemical mechanical polishing pad provided by the embodiment solves the problem that the planarization effect of the processing surface of a wafer is easily affected due to the large compression variable of the buffer layer when the stack-type polishing pad in the prior art is used.
As shown in FIG. 1, in the chemical mechanical polishing pad provided in this embodiment, the density of the polishing pad body 1 is 0.5-0.8 g/cm 3 . Density of 0.5-0.8 g/cm 3 The polishing pad body 1 of the polishing pad can reduce the hardness of the polishing pad body 1, and can counteract the adverse effects of poor surface processing uniformity and scratch of the workpiece 4 to be polished, which are caused by no buffer layer. Specifically, the density of the polishing pad body 1 is preferably 0.6 to 0.7g/cm 3 。
As shown in fig. 2, in the chemical mechanical polishing pad provided in this embodiment, the size of the foaming microsphere of the hole 5 generated by the polishing pad body 1 is 10-40 um. The holes 5 on the polishing pad body 1 are generated by the foaming microspheres with the size of 10-40um, so that the roughness of the surface of the polishing pad body 1 can be reduced, the contact area between the surface of the polishing pad body 1 and the processing surface of the workpiece 4 to be polished is increased, the removal rate is increased, and the surface scratch of the workpiece 4 to be polished is reduced. Specifically, the size of the expanded microspheres of the polishing pad body 1, which generate the holes 5, is preferably 10-30 um.
As shown in fig. 3, in the chemical mechanical polishing pad provided in this embodiment, the trench 2 is a through trench with two open ends. The grooves 2 are provided with through grooves with two open ends, and processing byproducts can be taken away through fluid transmission of the grinding fluid 3 in the grooves 2, so that processing defects on the surface of the workpiece 4 to be ground are reduced. In addition, as an alternative embodiment, the groove 2 may be provided in a spiral shape, and an opening is provided near one end of the outermost periphery.
As shown in fig. 3, in the chemical mechanical polishing pad provided in this embodiment, the trench 2 is a straight groove. The straight strip-shaped groove can improve the transmission speed of the grinding fluid 3 in the groove 2, quickly take away the processing byproducts, and reduce the processing defects on the surface of the workpiece 4 to be ground.
As shown in fig. 3, in the chemical mechanical polishing pad provided in this embodiment, a plurality of grooves 2 are disposed on the upper surface of the polishing pad body 1 in a cross grid structure. The grooves 2 on the upper surface of the polishing pad body 1 are arranged in a cross square grid structure, so that the storage capacity of the polishing liquid 3 in the grooves 2 can be improved, processing byproducts can be quickly taken away by means of fluid, the removal rate is improved, and the surface scratch of a piece to be polished 4 is reduced. In addition, as an alternative embodiment, the grooves 2 may be formed on the upper surface of the polishing pad body 1 in a diamond structure or other structures with staggered straight grooves.
As shown in fig. 1, in the chemical mechanical polishing pad provided in this embodiment, the distance between two adjacent grooves 2 is 600-1600 mils. The distance between two adjacent grooves 2 is controlled to be 600-1600mil, and the contact area between the grinding pad body 1 and the processing surface of the workpiece 4 to be ground is increased, and meanwhile, the liquid film content between the grinding pad body 1 and the workpiece 4 to be ground is increased, so that the removal rate is improved, and the surface scratch of the workpiece 4 to be ground is reduced. In particular, the spacing between two adjacent grooves 2 is preferably between 700 and 900 mils.
As shown in fig. 1, in the chemical mechanical polishing pad provided in this embodiment, the depth of the trench 2 is between 15 and 45 mils, and the width is between 10 and 80 mils. The storage capacity of the polishing liquid 3 and the processing by-product removal capacity in the groove 2 can be improved. Specifically, the depth of the groove 2 is preferably between 30 and 40mil, and the width is preferably between 65 and 80 mil.
Application method
As shown in fig. 1, in the chemical mechanical polishing pad provided in this embodiment, when in use, the upper surface of the polishing pad body 1 contacts with the workpiece 4 to be polished and generates mechanical friction, and meanwhile, the polishing liquid 3 stored in the groove 2 and the surface of the workpiece 4 to be polished generate chemical reaction to increase polishing efficiency.
In addition, this embodiment also provides a polishing platen, which adopts the chemical mechanical polishing pad described in the foregoing embodiment, and the chemical mechanical polishing pad is fixed on the polishing platen by using an adhesive, so as to implement polishing of the workpiece 4 to be polished with high planarization, high removal rate and low scratch.
In addition, this embodiment also provides a polishing apparatus, which includes the polishing platform described in the foregoing embodiment, so as to achieve high planarization, high removal rate, and low scratch polishing of the workpiece 4 to be polished.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.

Claims (14)

1. A chemical mechanical polishing pad comprising: the polishing pad comprises a polishing pad body (1), wherein the polishing pad body (1) adopts a single-layer structure, the thickness of the polishing pad body is 75-85mil, the upper surface of the polishing pad body (1) is used for polishing a piece (4) to be polished, and a groove (2) for storing polishing liquid (3) is formed in the upper surface of the polishing pad body (1).
2. The chemical mechanical polishing pad according to claim 1, wherein the density of the polishing pad body (1) is 0.5-0.8 g/cm 3 。
3. The chemical mechanical polishing pad according to claim 2, wherein the density of the polishing pad body (1) is 0.6-0.7 g/cm 3 。
4. The chemical mechanical polishing pad according to claim 1, wherein the foam microsphere size of the polishing pad body (1) generating the holes (5) is 10-40 um.
5. The chemical mechanical polishing pad according to claim 4, wherein the foam microsphere size of the holes (5) generated in the polishing pad body (1) is 10-30 um.
6. The chemical mechanical polishing pad according to any one of claims 1 to 5, wherein the grooves (2) are open-ended through grooves.
7. The chemical mechanical polishing pad according to claim 6, wherein the grooves (2) are straight grooves.
8. A chemical mechanical polishing pad according to claim 7, wherein a plurality of the grooves (2) are provided in a cross-square structure on the upper surface of the polishing pad body (1).
9. A chemical mechanical polishing pad according to claim 8, wherein the pitch between two adjacent grooves (2) is 600-1600 mil.
10. A chemical mechanical polishing pad according to claim 9, wherein the pitch between two adjacent grooves (2) is between 700 and 900 mil.
11. A chemical mechanical polishing pad according to any one of claims 7 to 10, wherein the grooves (2) have a depth of between 15 and 45 mils and a width of between 10 and 80 mils.
12. The chemical mechanical polishing pad according to claim 11, wherein the depth of the grooves (2) is between 30 and 40mil and the width is between 65 and 80 mil.
13. An abrasive platform, comprising: the chemical mechanical polishing pad of any one of claims 1-12, the chemical mechanical polishing pad being affixed to the polishing platen by a paste.
14. A grinding apparatus, comprising: the polishing platen of claim 13.
CN202311475195.0A 2023-11-07 2023-11-07 Chemical mechanical polishing pad, polishing platform and polishing device Pending CN117300888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311475195.0A CN117300888A (en) 2023-11-07 2023-11-07 Chemical mechanical polishing pad, polishing platform and polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311475195.0A CN117300888A (en) 2023-11-07 2023-11-07 Chemical mechanical polishing pad, polishing platform and polishing device

Publications (1)

Publication Number Publication Date
CN117300888A true CN117300888A (en) 2023-12-29

Family

ID=89242796

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311475195.0A Pending CN117300888A (en) 2023-11-07 2023-11-07 Chemical mechanical polishing pad, polishing platform and polishing device

Country Status (1)

Country Link
CN (1) CN117300888A (en)

Similar Documents

Publication Publication Date Title
US9951054B2 (en) CMP porous pad with particles in a polymeric matrix
US7357698B2 (en) Polishing pad and chemical mechanical polishing apparatus using the same
US8337282B2 (en) Polishing pad
US6383934B1 (en) Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids
WO2013039181A1 (en) Polishing pad
JP5127882B2 (en) Semiconductor wafer double-side polishing method
CN102601727B (en) Chemical mechanical polishing pad and chemical mechanical polishing method
TWI398336B (en) Method for producing a semiconductor wafer
US11424138B2 (en) Substrate cleaning tool, substrate cleaning apparatus, substrate processing apparatus, substrate processing method, and method of manufacturing substrate cleaning tool
US20030114084A1 (en) Method and apparatus for polishing substrates
US6099390A (en) Polishing pad for semiconductor wafer and method for polishing semiconductor wafer
JP2018171702A (en) Chemical mechanical polishing pad
TW201313388A (en) Polishing pad
US10974366B2 (en) Conditioning wheel for polishing pads
US11883926B2 (en) Polishing pad, semiconductor fabricating device and fabricating method of semiconductor device
US20180361529A1 (en) Chemical mechanical polishing system and method
CN110774169B (en) Polishing apparatus, surface dressing apparatus, and polishing method
CN117300888A (en) Chemical mechanical polishing pad, polishing platform and polishing device
JP2006210657A (en) Polishing pad, polishing device, and method of manufacturing semiconductor device
JP2007149949A (en) Polishing pad for device wafer
CN103943557B (en) Method for flattening surface of polymer dielectric layer in re-wiring layer through CMP
WO2013103142A1 (en) Polishing pad
JP2009094343A (en) Electrochemical polishing method and polishing method
JP2008047849A (en) Polishing method, polishing pad and its manufacturing method
JPWO2013129426A1 (en) Polishing pad

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination