CN117294358A - Photon calculation unit based on digital logic control - Google Patents

Photon calculation unit based on digital logic control Download PDF

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Publication number
CN117294358A
CN117294358A CN202311250257.8A CN202311250257A CN117294358A CN 117294358 A CN117294358 A CN 117294358A CN 202311250257 A CN202311250257 A CN 202311250257A CN 117294358 A CN117294358 A CN 117294358A
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optical waveguide
phase change
change material
digital logic
logic control
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程唐盛
蒲华楠
胡梓昕
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Guangbian Technology Suzhou Co ltd
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Guangbian Technology Suzhou Co ltd
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/516—Details of coding or modulation
    • H04B10/5161—Combination of different modulation schemes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/70—Photonic quantum communication
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention discloses a photon calculating unit based on digital logic control, which comprises an optical waveguide and a group of modulators based on absorption effect or dispersion effect, wherein the modulators use an electric signal as external excitation to change the absorption coefficient or refractive index of the optical waveguide to light, and the accurate modulation of an optical input signal is realized by adopting a mode of controlling the modulation depth of each modulator to be different but the modulation depth proportion of a group of modulators to be fixed. The invention has lower requirement on modulating signal source, can realize commercial application of photon calculation chip more quickly, and can modulate optical input signal more easily in application, thereby realizing photon calculation with higher precision.

Description

Photon calculation unit based on digital logic control
Technical Field
The invention relates to the technical field of photon calculation, in particular to a photon calculation unit based on digital logic control.
Background
With the growing maturity of the silicon optical technology and the great advantage of optical communication, people pay attention to the silicon optical chip from information transmission to information processing, including the front application fields of analog calculation, quantum calculation, brain-like calculation and the like. The photonic computing chip with the photonic devices as basic units is constructed by using the photonic devices, and photons with high speed, parallel and low power consumption can be used as carriers of information, so that the photonic computing chip is considered as a scheme with the most promising future high-speed, ultra-large-scale, large-data-volume and artificial intelligent computing and brain-like computing.
The existing more conventional photon computing chip technology paths are as follows: photon calculations are implemented by using Mach-Zehnder interferometers (MZIs) or micro-Ring Structures (MMRs), for example, as disclosed in Chinese patent CN115905792, CN113392965, and the calculation arrays formed on the basis of these are as disclosed in Chinese patent CN10407644, CN 116107037. Other photonic computing chip technology paths exist, such as a photoelectric hybrid computing unit based on phase change materials, as disclosed in chinese patent CN 201880086978.0; or photon computing arrays for on-chip large-scale matrix multiplication, such as electro-optic modulators based on the light absorption effect proposed by the applicant, as disclosed in chinese patent 202310669033.4, or photoelectric hybrid computing units and photoelectric hybrid computing arrays based on the carrier light absorption effect, as disclosed in chinese patent 202310965549.3, etc., as recently proposed by the applicant.
The above technical paths have various advantages in terms of underlying computing principle, computing speed, computing unit size, power consumption, etc., but from the engineering application point of view, the following problems are also present:
1. the modulation depth of the optical input signal by the single modulator is limited (although the photon calculation unit based on the MZI or the micro-ring can realize pi phase shift and further realize modulation depth from no light to light, the linear modulation interval is narrow, so that the part capable of being modulated is limited), so that the effective calculation precision of the single photon calculation unit is low, and the requirement of commercial application is difficult to meet. If the application threshold of 8bit precision required by AI reasoning needs to be reached, the modulation step size of the modulator needs to be small enough to meet the requirement, in this case, the requirements on the modulator and the electric signal generator are high, which is difficult to realize and has high cost in terms of the current industry technology level.
2. The accuracy requirement during the training of the existing AI model is at least 16 bits, and the accuracy requirement of most models is 32 bits, so that the existing photon calculation chip cannot meet the application requirement. If large-scale application in AI model training is desired, 16bit and beyond accuracy is necessary. At most, the single modulator can only achieve 8-bit calculation precision, and 16-bit and above precision is very difficult to achieve under the technical level of the prior industry.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a photon calculation unit based on digital logic control, which realizes higher-precision modulation of an optical input signal.
The aim of the invention is achieved by the following technical scheme:
the first scheme is as follows:
the photon calculation unit based on digital logic control comprises an optical waveguide and a group of modulators based on absorption effect, wherein the modulators comprise modulators based on free carrier absorption effect or modulators based on phase change material absorption effect, a first end of the optical waveguide is an input end and is used for receiving optical input signals, a second end of the optical waveguide is an output end and is used for outputting optical output signals modulated by the modulators, each modulator is different in modulation depth under the same modulation voltage, the modulators are in fixed modulation depth proportion relation under the same modulation voltage, and each modulator is respectively and correspondingly connected with a switch and is connected to the same signal generator through the switch.
Preferably, the modulator based on the free carrier absorption effect uses the electric signal as external excitation, changes the absorption coefficient of the optical waveguide containing the free carriers to light by injecting current or applying voltage in the doped region to change the free carrier concentration, and the modulation depth ratio of the modulator based on the free carrier absorption effect is 2 in sequence from the input end to the output end of the optical waveguide 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 N is the number of modulators.
Preferably, the length of each modulator is 1 μm to 1000 μm.
Preferably, the electrical signal has a voltage amplitude of less than 10V and a duration of less than 100 μs.
Preferably, the optical waveguide has an absorption coefficient for light at different free carrier concentrations, and at least two different absorption coefficients for light are present under external excitation of the electrical signal.
The modulator based on the absorption effect of the phase change material further comprises a group of phase change material layers deposited on the optical waveguide, the signal generator generates an electric signal, the phase change materials of the group of phase change material layers all adopt the electric signal as external excitation to change the state of the phase change material, the state of the phase change material is represented by modifying the absorption coefficient of the optical waveguide containing the phase change material to light, the thickness of the group of phase change material layers is kept consistent and is 1 nm-1 mu m, and the proportion of the modulation depth of the light in the crystalline state is sequentially 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 。
Preferably, the length of each modulator is 1 μm to 1000 μm.
Preferably, the voltage amplitude of the electrical signal is less than 20V and the duration is less than 100ms.
Preferably, the phase change material has at least two stable states including crystalline and amorphous states at normal pressure within the CMOS operating temperature range.
Preferably, the phase change material has a difference in absorption coefficient between its different stable states (crystalline and amorphous).
Preferably, the surface of the group of phase change material layers is covered with an oxide layer, and the material of the oxide layer is silicon dioxide (SiO 2 ) ITO, alumina (Al 2 O 3 ) The thickness of the oxide layer is 30 nm-3 mu m.
The second scheme is as follows:
the photon calculating unit based on digital logic control comprises an optical waveguide and a group of modulators based on dispersion effect, wherein the modulators comprise modulators based on free carrier dispersion effect or modulators based on phase change material dispersion effect, a first end of the optical waveguide is an input end and is used for receiving an optical input signal, and a second end of the optical waveguide is an output end and is used for outputting an optical output signal modulated by the modulators;
the optical input signal is transmitted through a reference arm optical waveguide with a splitting ratio of 50%: the 50% multimode interferometer distributes the power of the optical input signal to two interference arms, namely an optical waveguide and a reference arm optical waveguide, on average;
The modulation depth of each modulator is different under the same modulation voltage, the modulators have a fixed modulation depth proportion relation under the same modulation voltage, each modulator is correspondingly connected with a switch, and the modulators are connected to the same signal generator through the switches;
the optical signals on the optical waveguide and the reference arm optical waveguide generate phase differences, the optical signals on the optical waveguide and the reference arm optical waveguide interfere through the multimode interferometer, and due to the existence of the phase differences, the optical signals can have the phenomena of cancellation or constructive, so that photon multiplication operation is realized.
Preferably, the modulator based on free carrier dispersion effect uses the electric signal as external excitation, changes the refractive index of the optical waveguide containing free carriers to light by injecting current or applying voltage in the doped region to change the free carrier concentration, and the modulation depth ratio of the modulator based on free carrier dispersion effect is 2 in turn from the input end to the output end of the optical waveguide 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 N is the number of modulators.
Preferably, the length of each modulator is 1 μm to 1000 μm.
Preferably, the electrical signal has a voltage amplitude of less than 10V and a duration of less than 100 μs.
Preferably, the optical waveguide has a refractive index for light at different free carrier concentrations, and at least two different refractive indices exist under external excitation of the electrical signal.
The modulator based on the dispersion effect of the phase change material further comprises a group of phase change materials deposited on the optical waveguideThe phase change materials of the group of phase change material layers all adopt the electric signals as external excitation to change the self state, the self state is represented by modifying the refractive index of the optical waveguide containing the phase change materials to light, the thickness of the group of phase change material layers is kept consistent and is 1 nm-1 mu m, and the proportion of the modulation depth of the light in the crystalline state is 2 in sequence 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 。
Preferably, the length of each modulator is 1 μm to 1000 μm.
Preferably, the voltage amplitude of the electrical signal is less than 20V and the duration is less than 100ms.
Preferably, the phase change material has at least two stable states including crystalline and amorphous states at normal pressure within the CMOS operating temperature range.
Preferably, the phase change material has a difference in refractive index between its different stable states (crystalline and amorphous).
Preferably, the surface of the group of phase change material layers is covered with an oxide layer, and the material of the oxide layer is silicon dioxide (SiO 2 ) ITO, alumina (Al 2 O 3 ) The thickness of the oxide layer is 30 nm-3 mu m.
The third scheme is as follows:
the photon calculation unit based on digital logic control comprises an optical waveguide and a group of modulators based on absorption effect, wherein the modulators comprise modulators based on free carrier absorption effect or modulators based on phase change material absorption effect, a first end of the optical waveguide is an input end and is used for receiving optical input signals, a second end of the optical waveguide is an output end and is used for outputting optical output signals modulated by the modulators, the modulation depth of each modulator is the same under the same modulation voltage, each modulator is correspondingly connected with a switch, and each signal generator is correspondingly connected through each switch and generates electric signals with the same or different voltages.
Preferably, the free load is based onThe modulator of the photon absorption effect uses the electric signal as external excitation, the doping area changes the absorption coefficient of the optical waveguide containing free carriers to light by injecting current or applying voltage to change the concentration of the free carriers, and the modulation voltage of the signal generator received by the doping area of the modulator in the direction from the input end to the output end of the optical waveguide is such that the proportion relation of the modulation depth of the light is as follows: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 N is the number of modulators.
Preferably, the length of each modulator is 1 μm to 1000 μm.
Preferably, the electrical signal has a voltage amplitude of less than 10V and a duration of less than 100 μs.
Preferably, the optical waveguide has an absorption coefficient for light at different free carrier concentrations, and at least two different absorption coefficients for light are present under external excitation of the electrical signal.
The modulator based on the absorption effect of the phase change material further comprises a group of phase change material layers deposited on the optical waveguide, the signal generator generates an electric signal, the phase change material of the group of phase change material layers adopts the electric signal as external excitation to change the state of the phase change material, the state of the phase change material is represented by modifying the absorption coefficient of the optical waveguide containing the phase change material to light, the thickness of the group of phase change material layers is kept consistent and is 1 nm-1 mu m, and the modulation voltage of the received signal generator enables the group of phase change material layers to sequentially have the following proportion relation of modulation depth of the light in crystalline state: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 。
Preferably, the length of each modulator is 1 μm to 1000 μm.
Preferably, the voltage amplitude of the electrical signal is less than 20V and the duration is less than 100ms.
Preferably, the phase change material has at least two stable states including crystalline and amorphous states at normal pressure within the CMOS operating temperature range.
Preferably, the phase change material has a difference in absorption coefficient between its different stable states (crystalline and amorphous).
Preferably, the surface of the group of phase change material layers is covered with an oxide layer, and the material of the oxide layer is silicon dioxide (SiO 2 ) ITO, alumina (Al 2 O 3 ) The thickness of the oxide layer is 30 nm-3 mu m.
The fourth scheme is as follows:
the photon calculating unit based on digital logic control comprises an optical waveguide and a group of modulators based on dispersion effect, wherein the modulators comprise modulators based on free carrier dispersion effect or modulators based on phase change material dispersion effect, a first end of the optical waveguide is an input end and is used for receiving an optical input signal, and a second end of the optical waveguide is an output end and is used for outputting an optical output signal modulated by the modulators;
the optical input signal is transmitted through a reference arm optical waveguide with a splitting ratio of 50%: the 50% multimode interferometer distributes the power of the optical input signal to two interference arms, namely an optical waveguide and a reference arm optical waveguide, on average;
The modulation depth of each modulator is the same under the same modulation voltage, each modulator is correspondingly connected with a switch, and each switch is correspondingly connected with a signal generator, and the signal generators generate electric signals with the same or different voltages;
the optical signals on the optical waveguide and the reference arm optical waveguide generate phase differences, the optical signals on the optical waveguide and the reference arm optical waveguide interfere through the multimode interferometer, and due to the existence of the phase differences, the optical signals can have the phenomena of cancellation or constructive, so that photon multiplication operation is realized.
Preferably, the modulator based on the free carrier dispersion effect uses the electric signal as an external stimulus, changes the refractive index of the optical waveguide containing free carriers to light by injecting current or applying voltage in its doped region to change its free carrier concentration, and changes the refractive index of the optical waveguide from the input end to the output end of the optical waveguide,the modulation voltage of the signal generator received by the doped region of the modulator is such that the proportional relation of the modulation depth of the light is as follows: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 N is the number of modulators.
Preferably, the length of each modulator is 1 μm to 1000 μm.
Preferably, the electrical signal has a voltage amplitude of less than 10V and a duration of less than 100 μs.
Preferably, the optical waveguide has a refractive index for light at different free carrier concentrations, and at least two different refractive indices exist under external excitation of the electrical signal.
Preferably, the modulator based on the dispersion effect of the phase change material further comprises a group of phase change material layers deposited on the optical waveguide, the signal generator generates an electric signal, the phase change material of the group of phase change material layers adopts the electric signal as external excitation to change its own state, the self state is represented by modifying the refractive index of the optical waveguide containing the phase change material to light, the thickness of the group of phase change material layers is kept consistent and is 1 nm-1 μm, and the modulation voltage of the signal generator received by the signal generator is such that the proportion relation of modulation depth of the group of phase change material layers to light in crystalline state is as follows: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 。
Preferably, the length of each modulator is 1 μm to 1000 μm.
Preferably, the voltage amplitude of the electrical signal is less than 20V and the duration is less than 100ms.
Preferably, the phase change material has at least two stable states including crystalline and amorphous states at normal pressure within the CMOS operating temperature range.
Preferably, the phase change material has a difference in refractive index between its different stable states (crystalline and amorphous).
Preferably, the surface of the phase change material layer is covered with an oxide layer made of silicon dioxide (SiO 2 ) ITO, oxidationAluminum (Al) 2 O 3 ) The thickness of the oxide layer is 30 nm-3 mu m.
The beneficial effects of the invention are mainly as follows: the requirements on the modulation signal source are lower, the commercial application of the photon calculation chip can be realized faster, and the modulation of the optical input signal with higher precision can be realized more easily in the application, so that the photon calculation with higher precision is realized.
Drawings
The technical scheme of the invention is further described below with reference to the accompanying drawings:
fig. 1: a schematic diagram of a first embodiment of a digital logic control-based photonic computing unit of the present invention;
fig. 2: a schematic diagram of a second embodiment of a digital logic control based photonic computing unit of the present invention;
fig. 3: a schematic diagram of a third embodiment of a digital logic control based photonic computing unit of the present invention;
fig. 4: a schematic diagram of a fourth embodiment of a digital logic control-based photonic computing unit of the present invention;
fig. 5: a schematic diagram of a fifth embodiment of a digital logic control-based photonic computing unit of the present invention;
Fig. 6: a schematic diagram of a sixth embodiment of a digital logic control based photonic computing unit of the present invention;
fig. 7: a schematic diagram of a seventh embodiment of a digital logic control based photonic computing unit of the present invention;
fig. 8: a schematic diagram of an eighth embodiment of a digital logic control-based photonic computing unit of the present invention;
fig. 9: a specific example of the first embodiment of the present invention for realizing 4-bit effective calculation accuracy is shown where n=4.
Fig. 10: a specific exemplary schematic diagram for realizing 4-bit effective calculation accuracy according to the fourth embodiment of the present invention, where n=4;
fig. 11: a specific example of the fifth embodiment of the present invention for realizing 4-bit effective calculation accuracy is shown in which n=4.
Fig. 12: a specific example of the eighth embodiment of the present invention for realizing 4-bit effective calculation accuracy is shown in which n=4.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. The embodiments are not limited to the present invention, and structural, methodological, or functional modifications of the invention from those skilled in the art are included within the scope of the invention.
The invention discloses a photon calculating unit based on digital logic control, which comprises an optical waveguide 6 and a group of modulators based on absorption effect or dispersion effect. The first end of the optical waveguide 6 is an input end for receiving the optical input signal 1, and the second end of the optical waveguide 6 is an output end for outputting the optical output signal 2 modulated by the modulator. The optical waveguide 6 has an optical bandgap of at least 1eV, and the material of the optical waveguide is selected from: silicon, silicon nitride, gallium arsenide, aluminum nitride, magnesium oxide, and polycrystalline or monocrystalline diamond. In the invention, the modulator based on the absorption effect comprises a modulator based on the free carrier absorption effect or a modulator based on the phase change material absorption effect.
The modulator based on the free carrier absorption effect uses the electric signal as external excitation, and changes the absorption coefficient alpha of the optical waveguide containing the free carriers to light by injecting current or applying voltage to change the free carrier concentration in the doped region.
The modulator based on the absorption effect of the phase change material utilizes the electric signal as external excitation to change the self state of the phase change material, wherein the self state is represented by modifying the absorption coefficient alpha of the optical waveguide containing the phase change material for light.
In the invention, the modulator based on the dispersion effect comprises a modulator based on the free carrier dispersion effect or a modulator based on the phase change material dispersion effect.
The modulator based on the free carrier dispersion effect uses the electric signal as external excitation, and changes the refractive index n of the optical waveguide containing free carriers to light by injecting current or applying voltage to change the concentration of the free carriers in the doped region.
The modulator based on the dispersion effect of the phase change material utilizes the electric signal as external excitation to change the self state of the phase change material, wherein the self state is represented by modifying the refractive index n of the optical waveguide containing the phase change material for light.
In other words, the photon calculation unit based on the absorption effect calculates by using the absorption coefficient α, and may be composed of a modulator based on the free carrier absorption effect or a modulator based on the phase change material absorption effect. In a modulator based on the free carrier absorption effect, the absorption coefficient alpha of the optical waveguide to light under different free carrier concentrations has at least two different light absorption coefficients under the external excitation of the electrical signal. In modulators based on the absorption effect of phase change materials, there are at least two different light absorption coefficients for different steady state (crystalline and amorphous containing) phase change materials. The phase change material may be a superlattice material; the phase change material may comprise or consist of a compound or alloy of a combination of elements selected from GeSbTe, VOx, e.g. Ge 2 Sb 2 Te 5 (GST); nbOx, geTe, geSb, gaSb, agInSbTe, inSb, inSbTe, inSe, sbTe, teGeSbS, agSbSe, sbSe, geSbMnSn, agSbTe, auSbTe and AlSb, which may comprise mixtures of the above-mentioned compounds. The photon calculation unit has a mapping in the form of a rational function between the modulation depth and the length of the modulator, and most of the mapping is in the form of a linear function. The photon calculation unit has a mapping between the modulation depth and the modulation voltage in a rational function form or an elementary function form.
The photon calculation unit based on the dispersion effect calculates by using the refractive index n, and can be composed of a modulator based on the dispersion effect of free carriers or a modulator based on the dispersion effect of phase change materials. In a modulator based on the free carrier dispersion effect, the refractive index n of the optical waveguide to light under different free carrier concentrations is excited by the external excitation of the electric signal,there are at least two different refractive indices. In modulators based on the dispersion effect of phase change materials, there are at least two different refractive indices for the refractive index n of the phase change material in different steady states (crystalline and amorphous). The phase change material is formed of or comprises a chalcogenide compound comprising antimony or selenium, such as antimony selenide (Sb 2 Se 3 Or SbSe), antimony sulfide (Sb 2 S 3 Or SbS, ge 2 Sb 2 Se 4 Te (GSST). The photon calculation unit has a mapping in the form of an elementary function between the modulation depth and the length of the modulator. The photon calculation unit has a mapping between the modulation depth and the modulation voltage in a rational function form or an elementary function form.
As in the first embodiment shown in fig. 1, each of the modulators is a modulator based on the free carrier absorption effect. The modulation depth of each modulator is different under the same modulation voltage, and each modulator has a fixed modulation depth proportional relation under the same modulation voltage. The modulator comprises a doped region close to the optical waveguide 6. In this embodiment, the doped regions 4 of the modulators are oriented from the input end to the output end of the optical waveguide 6 1 ：4 2 ：4 3 ……4 n The modulation depth ratio relationship under the same modulation voltage is 2 in turn 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 N is the number of modulators. Of course, this is the preferred order, other orders are within the scope of the invention, such as from the output end to the input end of the optical waveguide 6, the modulators having a modulation depth ratio of 2 in turn for light at the same modulation voltage 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 . In this embodiment, the length of the individual modulators may be selected to be between 1 μm and 1000 μm. In this embodiment, the modulation depth and the length of the individual modulator have a map in the form of a rational function, most of which is a map in the form of a linear function. In the preferred embodiment, the modulation depth ratio relationship is 2 0 The length of the modulator is preferably 1 μm, 2 μm, 5 μm, 10 μm,20μm、50μm、100μm。
In this embodiment, the modulation depth is different, that is, the modulation degree of the optical input signal is different. As shown in fig. 1, each of the modulators is connected to a respective switch 3, and is connected to the same signal generator 5 via the switches 3. Specifically, the signal generator 5 generates the same electrical signal (i.e., the modulation voltage is the same), and the signal generator 5 transmits the generated electrical signal to the doped region through the first contact electrode and the second contact electrode, respectively. The voltage amplitude of the electrical signal is less than 10V, preferably less than 3.3V; the duration is less than 100 mus, preferably less than 100ns. The electric signal causes the free carriers to directionally move under the action of the electric field, and the change of parameters of the electric signal can change the concentration of the free carriers in the doped region, so that the absorption coefficient of the optical waveguide containing the free carriers to light is changed. The optical waveguide has an absorption coefficient alpha for light under different free carrier concentrations, and at least two different absorption coefficients alpha exist under the external excitation of the electrical signal. The modulator of this embodiment includes a doped region based on semiconductor doping techniques such as ion implantation or high temperature diffusion and a pair of contact electrodes forming an ohmic or schottky contact with the doped region.
In this embodiment, n is the number of modulators, and represents the n-bit calculation accuracy of the photon calculation unit. The digital logic (0 or 1) is used for controlling the switch 3, so as to control whether the corresponding modulator works (on or off), and the n-bit calculation precision can be realized. For example, 8 modulators are used to realize 8bit calculation precision, and modulation depth proportion relation is base 2 0 The modulation depth of the modulator is recorded as 1, if the modulation depth of the photon calculation unit needs to be controlled to be 108, the corresponding 8bit binary number is 01101100, the corresponding control switch 3 is controlled, and the modulation depth proportion relation is controlled to be the base 2 2 、2 3 、2 5 、2 6 The remaining modulators are not operated. Therefore, the invention can accurately control the modulation degree of the optical signal by controlling the switch between the signal generator and the modulator under the condition that the modulation voltage is unchanged (consistent), namely, the required modulation depth is mapped to binary numbers, and the optical signal is modulated by digital logic [ ]0 or 1) controls a single modulator switch (on or off) to achieve a corresponding modulation of the optical input signal.
The second embodiment as shown in fig. 2 differs from the first embodiment in that the modulator based on the absorption effect of the phase change material further comprises a phase change material layer 7 deposited on the optical waveguide 6 1 、7 2 、7 3 ……7 n . The phase change material of the phase change material layer 7 is a phase change material having an absorption effect. The thickness of the phase change material layers is kept consistent and is 1 nm-1 mu m, and the proportion relation of the modulation depth of the phase change materials to the light in the crystalline state is sequentially 2 from the input end to the output end of the optical waveguide 6 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 . Likewise, other orders of the modulation depth scaling of the light are possible. In this embodiment, the length of the individual modulators may be selected to be between 1 μm and 1000 μm.
In this embodiment, the modulation depth and the length of the individual modulator have a map in the form of a rational function, most of which is a map in the form of a linear function. In this embodiment, the position of the phase change material layer deposited on the optical waveguide may be the same as or different from the position of the modulation region in the first embodiment.
The phase change material of the phase change material layer 7 has at least two stable states including crystalline and amorphous states at normal pressure within the CMOS operating temperature range. The phase change material of the phase change material layer has larger difference of optical and electrical characteristics between different stable states (crystalline state and amorphous state), has difference of absorption coefficients, can induce phase change in various modes such as heat, light, electricity and the like, and has stable characteristics. In this embodiment, when the signal generator 5 generates an electrical signal, the phase change material changes its own state by using the electrical signal as an external stimulus, the own state being represented by modifying the absorption coefficient α of light for an optical waveguide containing the phase change material. The voltage amplitude of the electrical signal is less than 20V, preferably less than 15V; the duration is less than 100ms, preferably less than 100 mus.
In this embodiment, the phase change material of the phase change material layer 7 may be a superlattice material; the phase change material may comprise or consist of a compound or alloy of a combination of elements selected from GeSbTe, VOx;
NbOx, geTe, geSb, gaSb, agInSbTe, inSb, inSbTe, inSe, sbTe, teGeSbS, agSbSe, sbSe, geSbMnSn, agSbTe, auSbTe and AlSb, which may comprise mixtures of the above-mentioned compounds. The phase change material has a difference in absorption coefficient alpha between its different stable states, crystalline and amorphous.
The surface of the phase change material layer is covered with an oxide layer made of silicon dioxide (SiO 2 ) ITO, alumina (Al 2 O 3 ). Preferably, the thickness of the oxide layer is 30 nm-3 μm.
Similarly, in this embodiment, n is the number of modulators and the number of corresponding phase change material layers, which also represents that the photon calculation unit has n-bit calculation accuracy. In this embodiment, under the condition that the modulation voltage is unchanged (consistent), the switch 3 is controlled by using the digital logic (0 or 1), so as to further control whether the corresponding modulator works (on or off), so that the corresponding phase change material is modulated to a corresponding state, thereby realizing the corresponding modulation of the optical input signal, and realizing the effective calculation precision of n bits.
The third embodiment shown in fig. 3 is different from the first embodiment in that the photon calculation unit adopts a modulator based on carrier dispersion effect under MZI structure, that is, a multimode interferometer 9 as an optical beam splitter and a multimode interferometer 10 as an optical combiner are structurally included, and a reference arm optical waveguide 8 as a branch. In this configuration, the optical input signal 1 passes through a spectral ratio of 50%: the 50% multimode interferometer 9 distributes the power of the optical input signal 1 equally to the two interference arms, the optical waveguide 6 and the reference arm optical waveguide 8, respectively. The optical waveguide 6 comprises a set of modulators based on carrier dispersion effects and has the same structure as the first embodiment.
As shown in particular in fig. 3, the modulator based on the carrier dispersion effect comprises a doped region 4 close to the optical waveguide 6 1 、4 2 、4 3 ……4 n . The modulators have a fixed modulation depth ratio relationship with each other under the same modulation voltage, and the modulation depth ratio relationship of the modulators under the same modulation voltage is sequentially 2 from the input end to the output end of the optical waveguide 6 0 :2 1 :2 2 :2 3 ……2 n -2 :2 n-1 N is the number of modulators. Of course, this is the preferred order, other orders are within the scope of the invention, such as the modulation depth scaling of these modulators being 2 in sequence from the output side to the input side of the optical waveguide 6 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 . In this embodiment, the individual modulators have a mapping of elementary function forms of modulation depth and modulator length. In this embodiment, the length of the individual modulators may be selected to be between 1 μm and 1000 μm.
The modulator based on the carrier dispersion effect uses an electrical signal as an external excitation to enable the optical waveguide 6 to change the refractive index of light only through the carrier dispersion effect, so that the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 generate a phase difference, and the optical ratio of the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 is 50%: the 50% multimode interferometer 10 interferes, and the optical signals have the phenomena of cancellation or constructive phase difference, so that photon multiplication is realized.
In this embodiment, the refractive index n of the optical waveguide for light under different free carrier concentrations has at least two different refractive indices n under the external excitation of the electrical signal. The voltage amplitude of the electrical signal is less than 10V, preferably less than 3.3V; the duration is less than 100 mus, preferably less than 100ns.
In this embodiment, the modulator uses an electrical signal as an external excitation to change the refractive index n of the optical waveguide to light, and uses digital logic (0 or 1) to control the switch 3 under the condition that the modulation voltage is unchanged (consistent), so as to control whether the corresponding modulator works (on or off), thereby realizing corresponding modulation of the optical input signal, and realizing effective calculation accuracy of n bits.
The fourth embodiment shown in fig. 4 is different from the second embodiment in that the photon calculating unit adopts a modulator based on the dispersion effect of phase change material in the MZI structure, that is, structurally further includes a multimode interferometer 9 as an optical beam splitter and a multimode interferometer 10 as an optical combiner, and a reference arm optical waveguide 8 as a branch.
The optical input signal 1 passes through a splitting ratio of 50%: the 50% multimode interferometer 9 distributes the power of the optical input signal 1 to two interference arms, namely an optical waveguide 6 and a reference arm optical waveguide 8, wherein the optical waveguide 6 includes a group of electro-optical modulators and phase-change materials, and the structure is the same as that of the second embodiment, and will not be described again. The only difference is that the phase change material of the phase change material layer 7 is a phase change material having a dispersion effect, the phase change material of the phase change material layer 7 is formed of or comprises a chalcogenide compound comprising antimony or selenium, such as antimony selenide (Sb 2 Se 3 Or SbSe), antimony sulfide (Sb 2 S 3 Or SbS, ge 2 Sb 2 Se 4 Te (GSST). The phase change material of the phase change material layer has at least two stable states including crystalline and amorphous states under normal pressure in the CMOS working temperature range. The phase change material of the phase change material layer has larger difference of optical and electrical characteristics between different stable states (crystalline state and amorphous state), has difference of refractive index, can induce phase change by various modes such as heat, light, electricity and the like, and has stable characteristics. In this embodiment, when the signal generator 5 generates an electrical signal, the phase change material changes its own state by using the electrical signal as an external stimulus, the own state is represented by modifying the refractive index n of the optical waveguide containing the phase change material to light, so that the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 generate a phase difference, and the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 have a splitting ratio of 50%: the 50% multimode interferometer 10 interferes, and the optical signals have the phenomena of cancellation or constructive phase difference, so that photon multiplication is realized. The voltage amplitude of the electrical signal is less than 20V, preferably less than15V; the duration is less than 100ms, preferably less than 100 mus. In this embodiment, the individual modulators have a mapping of elementary function forms of modulation depth and modulator length.
In this embodiment, n is the number of modulators and the number of corresponding phase change material layers, and represents that the photon calculation unit has n-bit calculation accuracy. In this embodiment, under the condition that the modulation voltage is unchanged (consistent), the switch 3 is controlled by using the digital logic (0 or 1), so as to further control whether the corresponding modulator works (on or off), so that the corresponding phase change material is modulated to a corresponding state, thereby realizing the corresponding modulation of the optical input signal, and realizing the effective calculation precision of n bits.
The fifth embodiment shown in fig. 5 is the same as the first embodiment and also includes an optical waveguide 6 and a set of modulators based on free carrier absorption effect, where a first end of the optical waveguide 6 is an input end for receiving an optical input signal 1, and a second end of the optical waveguide 6 is an output end for outputting an optical output signal 2 modulated by the modulators. The modulator based on the free carrier absorption effect uses an electrical signal as an external stimulus, and changes the absorption coefficient α of the optical waveguide containing free carriers for light by injecting a current or applying a voltage to change its free carrier concentration in its doped region 4. The optical waveguide has an absorption coefficient alpha for light under different free carrier concentrations, and at least two different absorption coefficients alpha exist under the external excitation of the electrical signal. The voltage amplitude of the electrical signal is less than 10V, preferably less than 3.3V; the duration is less than 100 mus, preferably less than 100ns.
The difference is that the modulation depth of each modulator is the same under the same modulation voltage, and the length of each modulator is the same and is 1-1000 μm.
Each modulator is correspondingly connected with a switch 3, and each signal generator 5 is correspondingly connected with the switch 3, and the signal generators 5 generate electric signals of modulation voltages with the same or different magnitudes. In this embodiment, the individual modulators have a mapping of the modulation depth and the magnitude of the modulation voltage in a rational or elementary functional form.
In order to achieve the same effect as the first embodiment, the modulation voltage of the signal generator 5 received by the doped region 4 of the modulator in the direction from the input end to the output end of the optical waveguide 6 has a proportional relationship of modulation depth of light: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 . Of course, this is the preferred order, other orders are within the scope of the invention, such as the modulation voltage of the signal generator 5 received by the doped region 4 of the modulator in the direction from the output end to the input end of the optical waveguide 6 such that the proportional relation of the modulation depth of the light is 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 。
In this embodiment, under the condition that the modulation areas of the modulators are the same, the modulation depth of the optical signal is precisely controlled by controlling the switch of each modulator with different modulation voltage, that is, the required modulation depth is mapped to binary number, and the switch (on or off) of a single modulator is controlled by digital logic (0 or 1), so that each modulator outputs the modulation voltage with the corresponding size, thereby realizing the corresponding modulation of the optical input signal, and realizing n-bit effective calculation precision.
A sixth embodiment, shown in fig. 6, comprises an optical waveguide 6 and a set of modulators based on the absorption effect of phase change materials.
The modulator based on the absorption effect of the phase change material further comprises a phase change material layer 7 deposited on the optical waveguide 6, the phase change material of the phase change material layer 7 is a phase change material with the absorption effect, the signal generator 5 generates an electric signal, the phase change material adopts the electric signal as external excitation to change its state, the self state is represented by modifying the absorption coefficient alpha of the optical waveguide containing the phase change material to light, and the modulation voltage of the signal generator 5 received by the phase change material of the phase change material layer 7 is such that the proportion relation of the modulation depth of the light in crystalline state is: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 Can realize the absorption of different optical waveguides to lightAnd (5) changing the coefficient alpha.
The phase change material of the phase change material layer has at least two stable states including crystalline and amorphous states under normal pressure in the CMOS working temperature range. The phase change material of the phase change material layer has larger difference of optical and electrical characteristics between different stable states (crystalline state and amorphous state), has difference of absorption coefficients, can induce phase change in various modes such as heat, light, electricity and the like, and has stable characteristics. In this embodiment, when the signal generator 5 generates an electrical signal, the phase change material changes its own state by using the electrical signal as an external stimulus, the own state being represented by modifying the absorption coefficient α of light for an optical waveguide containing the phase change material. The voltage amplitude of the electrical signal is less than 20V, preferably less than 15V; the duration is less than 100ms, preferably less than 100 mus. In this embodiment, the length of each modulator is the same and is 1 μm to 1000 μm. In this embodiment, the individual modulators have a mapping of the modulation depth and the magnitude of the modulation voltage in a rational or elementary functional form.
In this embodiment, the phase change material of the phase change material layer 7 may be a superlattice material; the phase change material may comprise or consist of a compound or alloy of a combination of elements selected from GeSbTe, VOx; nbOx, geTe, geSb, gaSb, agInSbTe, inSb, inSbTe, inSe, sbTe, teGeSbS, agSbSe, sbSe, geSbMnSn, agSbTe, auSbTe and AlSb, which may comprise mixtures of the above-mentioned compounds.
In this embodiment, under the condition that the modulation areas of the modulators are the same, the state of the phase change material is precisely controlled by controlling the switch of each modulator with different modulation voltage, so as to control the modulation depth of the optical signal, that is, map the required modulation depth to binary numbers, control the switch 3 by using digital logic (0 or 1), and further control whether the corresponding modulator works (on or off), and each modulator outputs the modulation voltage with the corresponding size, so that the corresponding phase change material is modulated to the corresponding state, thereby realizing the corresponding modulation of the optical input signal, and realizing the effective calculation precision of n bits.
As shown in the seventh embodiment of fig. 7, compared with the fifth embodiment, the photon calculation unit adopts a modulator based on free carrier dispersion effect under MZI structure, that is, a multimode interferometer that structurally further includes a beam splitter and a beam combiner, and a reference arm optical waveguide 8 as a branch.
The optical waveguide 6 is provided with a group of modulators based on the free carrier dispersion effect, and the structure is the same as that of the fifth embodiment. The modulator comprises a doped region 4 close to the optical waveguide 6. The length of each modulator is the same and is 1-1000 mu m. The optical waveguide has a refractive index n for light at different free carrier concentrations, and at least two different refractive indices n are present under external excitation of the electrical signal. The voltage amplitude of the electrical signal is less than 10V, preferably less than 3.3V; the duration is less than 100 mus, preferably less than 100ns.
Each modulator is correspondingly connected with a switch 3, and each signal generator 5 is correspondingly connected with the switch 3, and the signal generators 5 generate electric signals with different modulating voltages.
The modulation voltage of the signal generator 5 received by the doped region 4 of the modulator in the direction from the input end to the output end of the optical waveguide 6 is such that the preferred ratio of the modulation depth of the light in the crystalline state is: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 . In this embodiment, the modulation depth and the modulation voltage of the modulator based on the free carrier dispersion effect have a mapping of a rational function form or an elementary function form.
The optical input signal 1 passes through a splitting ratio of 50%: the 50% multimode interferometer 9 distributes the power of the optical input signal 1 equally to the two interference arms, the optical waveguide 6 and the reference arm optical waveguide 8, respectively. The modulator based on the free carrier dispersion effect uses an electrical signal as an external excitation to enable the optical waveguide 6 to change the refractive index n of light only through the carrier dispersion effect, so as to enable the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 to generate a phase difference, wherein the optical ratio of the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 is 50 percent: the 50% multimode interferometer 10 interferes, and the optical signals have the phenomena of cancellation or constructive phase difference, so that photon multiplication is realized.
In this embodiment, the modulator based on the free carrier dispersion effect uses an electrical signal as an external stimulus to change the refractive index n of the optical waveguide for light, and under the condition that the modulation areas of the modulators are the same, the modulation depth of the optical signal is precisely controlled by controlling the switch of each modulator with different modulation voltage, that is, the required modulation depth is mapped to binary number, and the single modulator switch (on or off) is controlled by digital logic (0 or 1), so that each modulator outputs the modulation voltage with the corresponding size, and the corresponding modulation of the optical input signal is realized.
As shown in the eighth embodiment of fig. 8, compared with the seventh embodiment, the photon calculating unit adopts a modulator based on the dispersion effect of the phase change material under the MZI structure. The phase change material of the phase change material layer 7 is a phase change material having a dispersion effect, and the phase change material of the phase change material layer 7 is formed of or contains a chalcogenide compound containing antimony or selenium, such as antimony selenide (Sb 2 Se 3 Or SbSe), antimony sulfide (Sb 2 S 3 Or SbS, ge 2 Sb 2 Se 4 Te (GSST). . The phase change material of the phase change material layer has at least two stable states including crystalline and amorphous states under normal pressure in the CMOS working temperature range. The phase change material of the phase change material layer has larger difference of optical and electrical characteristics between different stable states (crystalline state and amorphous state), has difference of refractive index, can induce phase change by various modes such as heat, light, electricity and the like, and has stable characteristics. In this embodiment, when the signal generator 5 generates an electrical signal, the phase change material adopts the electrical signal as an external stimulus to change its own state, which is represented by modifying the refractive index n of the optical waveguide containing the phase change material for light. The voltage amplitude of the electrical signal is less than 20V, preferably less than 15V; the duration is less than 100ms, preferably less than 100 mus. In this embodiment, the length of each modulator is the same and is 1 μm to 1000 μm. In the present embodiment of the present invention, The individual modulators have a mapping of the modulation depth and the magnitude of the modulation voltage in a rational or elementary functional form.
The optical input signal 1 passes through a splitting ratio of 50%: the 50% multimode interferometer 9 distributes the power of the optical input signal 1 to two interference arms, namely an optical waveguide 6 and a reference arm optical waveguide 8, respectively, the phase change material uses an electric signal as external excitation to change the refractive index of the optical waveguide 6 to light only, so that the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 generate a phase difference, and the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 have a splitting ratio of 50%: the 50% multimode interferometer 10 interferes, and the optical signals have the phenomena of cancellation or constructive phase difference, so that photon multiplication is realized.
In this embodiment, under the same modulation area of the modulators, the state of the phase change material is precisely controlled by controlling the switch of each modulator with different modulation voltage, so as to control the modulation depth of the optical signal, that is, map the required modulation depth to binary numbers, and control the switch 3 by using digital logic (0 or 1), so as to control whether the corresponding modulator works (on or off), and each modulator outputs the modulation voltage with the corresponding size, so that the corresponding phase change material is modulated to the corresponding state, thereby realizing the corresponding modulation of the optical input signal, and further realizing the effective calculation precision of n bits.
A specific example of achieving 4-bit effective calculation accuracy is shown in fig. 9 to 12.
Fig. 9 shows that in the first embodiment, n is 4, that is, the modulation depth ratio of the 4 modulators is sequentially 1:2:4:8, regarding the modulation depth proportion as base 2 0 The modulator modulation depth of (2) is recorded as unit 1, and the signal generator generates an electric signal with the same magnitude, so that the absorption coefficient alpha of the optical waveguide containing free carriers for light is changed by injecting current or applying voltage to the doped region to change the concentration of the free carriers. Then, by utilizing digital logic (0 or 1) to control a switch and further control the connection or disconnection between a signal generator and a modulator, the accurate modulation of an optical input signal from 0 to 15 is realized, and 4 bits are realizedAnd the accuracy is calculated effectively. For example, the optical input signal needs to be modulated by 7, and then the three switches on the left side in the figure are connected, and the one switch on the rightmost side is disconnected.
Fig. 10 shows that in the fourth embodiment, n is 4, that is, the refractive indexes of the 4 phase change materials to light are different, and the signal generator generates the same electric signal, so that the modulation depth ratio relationship is sequentially 1:2:4:8, regarding the modulation depth proportion as base 2 0 The modulator modulation depth of (2) is noted as unit 1. When the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 are summed by the multimode interferometer 10, the optical signals of the two can interfere when reaching the beam combiner, and then the optical signals are added or offset, so that photon multiplication operation is realized, and the modulation of the optical power of the optical input signal is realized.
Fig. 11 shows that in the fifth embodiment, the ratio relationship between the modulation voltages of the signal generator 5 received by the doped regions 4 of the 4 modulators is 1:2:4:8, regarding the modulation depth proportion as base 2 0 The modulator modulation depth of (2) is noted as unit 1. Then, by utilizing digital logic (0 or 1) to control the switch, the connection or disconnection between the signal generator and the modulator is further controlled, so that the accurate modulation of the optical input signal from 0 to 15 is realized, and the effective calculation precision of 4 bits is realized. For example, the optical input signal needs to be modulated by 7, and then the three switches on the left side in the figure are connected, and the one switch on the rightmost side is disconnected.
Fig. 12 discloses that in the eighth embodiment, n is 4, that is, the ratio relationship between the modulation voltages of the signal generators 5 received by the 4 phase change materials is sequentially 1:2:4:8, regarding the modulation depth proportion as base 2 0 The modulator modulation depth of (2) is recorded as unit 1, and the modulation depth ratio relationship is sequentially 1:2:4:8. when the optical signals on the optical waveguide 6 and the reference arm optical waveguide 8 are summed by the multimode interferometer 10, the optical signals of the two can interfere when reaching the beam combiner, and then the optical signals are added or offset, so that photon multiplication operation is realized, and the modulation of the optical power of the optical input signal is realized.
In other embodiments, when n is 4, the control manner is the same, so that the description is omitted. In all embodiments, when n takes other values, the control manner is the same, so that the description is omitted.
The above list of detailed descriptions is only specific to practical embodiments of the present invention, and they are not intended to limit the scope of the present invention, and all equivalent embodiments or modifications that do not depart from the spirit of the present invention should be included in the scope of the present invention.

Claims (44)

1. Photon calculation unit based on digital logic control, characterized by: the optical waveguide (6) and a group of modulators based on absorption effect, wherein the modulators comprise modulators based on free carrier absorption effect or modulators based on phase change material absorption effect, a first end of the optical waveguide (6) is an input end and is used for receiving an optical input signal (1), a second end of the optical waveguide (6) is an output end and is used for outputting an optical output signal (2) modulated by the modulators, the modulation depth of each modulator is different under the same modulation voltage, the modulators have a fixed modulation depth proportion relationship under the same modulation voltage, and each modulator is correspondingly connected with a switch (3) and is connected to the same signal generator (5) through the switch (3).
2. The digital logic control-based photonic computing unit of claim 1, wherein: the modulator based on the free carrier absorption effect uses the electric signal as external excitation, the absorption coefficient of the optical waveguide containing the free carriers to light is changed in the doped region (4) by injecting current or applying voltage to change the concentration of the free carriers, and the modulation depth proportion of the modulator based on the free carrier absorption effect is 2 in sequence from the input end to the output end of the optical waveguide (6) 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 N is the number of modulators.
3. The digital logic control-based photonic computing unit of claim 2, wherein: the length of each modulator is 1-1000 mu m.
4. The digital logic control based photonic computing unit of claim 2 wherein the voltage amplitude of the electrical signal is less than 10V for a duration of less than 100 μs.
5. The digital logic control-based photonic computing unit of claim 2, wherein: the optical waveguide has an absorption coefficient for light at different free carrier concentrations, and at least two different absorption coefficients exist under the external excitation of the electrical signal.
6. The digital logic control-based photonic computing unit of claim 1, wherein: the modulator based on the absorption effect of phase change material further comprises a set of phase change material layers (7) deposited on the optical waveguide (6) 1 ……7 n ) The signal generator (5) generates an electrical signal, the set of phase change material layers (7 1 ……7 n ) And the phase change material of the group (7) adopts an electric signal as external excitation to change the self state, wherein the self state is represented by modifying the absorption coefficient of light of the optical waveguide containing the phase change material, and the group of phase change material layers (7 1 ……7 n ) The thickness of the crystal is kept consistent and is 1nm to 1 mu m, and the proportion of the modulation depth of the light in the crystalline state is sequentially 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 。
7. The digital logic control based photonic computing unit of claim 6, wherein: the length of each modulator is 1-1000 mu m.
8. The digital logic control based photonic computing unit of claim 6, wherein the voltage amplitude of the electrical signal is less than 20V for a duration of less than 100ms.
9. The digital logic control based photonic computing unit of claim 6, wherein: the phase change material has at least two stable states including crystalline and amorphous states at normal pressure within the CMOS operating temperature range.
10. The digital logic control based photonic computing unit of claim 6, wherein: the phase change material has a difference in absorption coefficient between its different stable states, crystalline and amorphous.
11. The digital logic control based photonic computing unit of claim 6, wherein: the set of phase change material layers (7 1 ……7 n ) Is covered with an oxide layer of silicon dioxide (SiO 2 ) ITO, alumina (Al 2 O 3 ) The thickness of the oxide layer is 30 nm-3 mu m.
12. Photon calculation unit based on digital logic control, characterized by: the optical waveguide (6) is used for receiving an optical input signal (1), and the second end of the optical waveguide (6) is used for outputting an optical output signal (2) modulated by the modulator;
the optical input signal (1) further comprises a reference arm optical waveguide (8) with a splitting ratio of 50%: a 50% multimode interferometer (9) distributes the power of the optical input signal (1) equally to two interference arms, an optical waveguide (6) and a reference arm optical waveguide (8), respectively;
The modulation depth of each modulator is different under the same modulation voltage, the modulators have a fixed modulation depth proportion relationship under the same modulation voltage, each modulator is correspondingly connected with a switch (3), and the modulators are connected with the same signal generator (5) through the switches (3); the optical signals on the optical waveguide (6) and the reference arm optical waveguide (8) generate phase differences, the optical signals on the optical waveguide (6) and the reference arm optical waveguide (8) interfere through the multimode interferometer (10), and due to the existence of the phase differences, the optical signals can have the phenomena of cancellation or phase-correlation, so that photon multiplication operation is realized.
13. The digital logic control-based photonic computing unit of claim 12, wherein: the modulator based on the free carrier dispersion effect uses the electric signal as external excitation, changes the refractive index of the optical waveguide containing free carriers to light by injecting current or applying voltage in the doped region (4) to change the free carrier concentration, and the modulation depth proportion of the modulator based on the free carrier dispersion effect is 2 in sequence from the input end to the output end of the optical waveguide (6) 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 N is the number of modulators.
14. The digital logic control-based photonic computing unit of claim 13, wherein: the length of each modulator is 1-1000 mu m.
15. The digital logic control-based photonic computing unit of claim 13, wherein the electrical signal has a voltage amplitude of less than 10V and a duration of less than 100 μs.
16. The digital logic control-based photonic computing unit of claim 13, wherein: the optical waveguide has a refractive index for light at different free carrier concentrations, and at least two different refractive indices exist under external excitation of the electrical signal.
17. The digital logic control-based photonic computing unit of claim 12, wherein: the adjustment based on the dispersion effect of the phase change materialThe device further comprises a set of phase change material layers (7) deposited on said optical waveguide (6) 1 ……7 n ) The signal generator (5) generates an electrical signal, the set of phase change material layers (7 1 ……7 n ) And the phase change material of the group (7) adopts an electric signal as external excitation to change the self state, wherein the self state is represented by modifying the refractive index of the optical waveguide containing the phase change material to light, and the group of phase change material layers (7 1 ……7 n ) The thickness of the crystal is kept consistent and is 1nm to 1 mu m, and the proportion of the modulation depth of the light in the crystalline state is sequentially 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 。
18. The digital logic control-based photonic computing unit of claim 17, wherein: the length of each modulator is 1-1000 mu m.
19. The digital logic control-based photonic computing unit of claim 17, wherein the voltage amplitude of the electrical signal is less than 20V for a duration of less than 100ms.
20. The digital logic control-based photonic computing unit of claim 17, wherein: the phase change material has at least two stable states including crystalline and amorphous states at normal pressure within the CMOS operating temperature range.
21. The digital logic control-based photonic computing unit of claim 17, wherein: the phase change material has a difference in refractive index between its different stable states, crystalline and amorphous.
22. The digital logic control-based photonic computing unit of claim 17, wherein: the set of phase change material layers (7 1 ……7 n ) Is covered with an oxide layer of silicon dioxide (SiO 2 ) ITO, alumina (Al 2 O 3 ) The thickness of the oxide layer is 30 nm-3 mu m.
23. Photon calculation unit based on digital logic control, characterized by: the optical waveguide (6) is used for receiving an optical input signal (1), the second end of the optical waveguide (6) is used for outputting an optical output signal (2) modulated by the modulators, the modulation depth of each modulator is the same under the same modulation voltage, each modulator is respectively and correspondingly connected with a switch (3), each switch (3) is respectively and correspondingly connected with a signal generator (5), and the signal generators (5) generate electric signals with the same or different voltages.
24. The digital logic control-based photonic computing unit of claim 23, wherein: the modulator based on the free carrier absorption effect uses the electric signal as external excitation, the absorption coefficient of the optical waveguide containing free carriers for light is changed by injecting current or applying voltage in the doped region (4) so as to change the free carrier concentration, and the modulation voltage of the signal generator (5) received by the doped region (4) of the modulator is in the direction from the input end to the output end of the optical waveguide (6), so that the proportion relation of the modulation depth of the light is as follows: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 N is the number of modulators.
25. The digital logic control based photonic computing unit of claim 24, wherein: the length of each modulator is 1-1000 mu m.
26. The digital logic control-based photonic computing unit of claim 24, wherein the electrical signal has a voltage magnitude of less than 10V and a duration of less than 100 μs.
27. The digital logic control based photonic computing unit of claim 24, wherein: the optical waveguide has an absorption coefficient for light at different free carrier concentrations, and at least two different absorption coefficients exist under the external excitation of the electrical signal.
28. The digital logic control-based photonic computing unit of claim 23, wherein: the modulator based on the absorption effect of phase change material further comprises a set of phase change material layers (7) deposited on the optical waveguide (6) 1 ……7 n ) The signal generator (5) generates an electrical signal, the set of phase change material layers (7 1 ……7 n ) And the electrical signal is used as an external stimulus to change the state of the phase change material, the state of the phase change material is represented by modifying the absorption coefficient of light of an optical waveguide containing the phase change material, and the group of phase change material layers (7 1 ……7 n ) Is of a thickness of 1nm to 1 μm, which receives a modulating voltage of the signal generator (5) of a magnitude such that the set of phase change material layers (7 1 ……7 n ) The modulation depth proportion relation of light in crystalline state is as follows: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 。
29. The digital logic control based photonic computing unit of claim 28, wherein: the length of each modulator is 1-1000 mu m.
30. The digital logic control-based photonic computing unit of claim 28, wherein the voltage amplitude of the electrical signal is less than 20V for a duration of less than 100ms.
31. The digital logic control based photonic computing unit of claim 28, wherein: the phase change material has at least two stable states including crystalline and amorphous states at normal pressure within the CMOS operating temperature range.
32. The digital logic control based photonic computing unit of claim 28, wherein: the phase change material has a difference in absorption coefficient between its different stable states, crystalline and amorphous.
33. The digital logic control based photonic computing unit of claim 28, wherein: the set of phase change material layers (7 1 ……7 n ) Is covered with an oxide layer of silicon dioxide (SiO 2 ) ITO, alumina (Al 2 O 3 ) The thickness of the oxide layer is 30 nm-3 mu m.
34. Photon calculation unit based on digital logic control, characterized by: the optical waveguide (6) is used for receiving an optical input signal (1), and the second end of the optical waveguide (6) is used for outputting an optical output signal (2) modulated by the modulator;
the optical input signal (1) further comprises a reference arm optical waveguide (8) with a splitting ratio of 50%: a 50% multimode interferometer (9) distributes the power of the optical input signal (1) equally to two interference arms, an optical waveguide (6) and a reference arm optical waveguide (8), respectively;
the modulation depth of each modulator is the same under the same modulation voltage, each modulator is correspondingly connected with a switch (3), each switch (3) is correspondingly connected with a signal generator (5), and the signal generators (5) generate electric signals with the same or different voltages;
The optical signals on the optical waveguide (6) and the reference arm optical waveguide (8) generate phase differences, the optical signals on the optical waveguide (6) and the reference arm optical waveguide (8) interfere through the multimode interferometer (10), and due to the existence of the phase differences, the optical signals can have the phenomena of cancellation or phase-correlation, so that photon multiplication operation is realized.
35. The digital logic control-based photonic computing unit of claim 34, wherein: the modulator based on the free carrier dispersion effect uses the electric signal as external excitation, the doping area (4) changes the refractive index of the optical waveguide containing free carriers to light by injecting current or applying voltage to change the concentration of the free carriers, and the modulation voltage of the signal generator (5) received by the doping area (4) of the modulator is in the direction from the input end to the output end of the optical waveguide (6) so that the proportion relation of the modulation depth of the light is as follows: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 N is the number of modulators.
36. The digital logic control based photonic computing unit of claim 35, wherein: the length of each modulator is 1-1000 mu m.
37. The digital logic control-based photonic computing unit of claim 35, wherein the electrical signal has a voltage magnitude of less than 10V and a duration of less than 100 μs.
38. The digital logic control based photonic computing unit of claim 35, wherein: the optical waveguide has a refractive index for light at different free carrier concentrations, and at least two different refractive indices exist under external excitation of the electrical signal.
39. The digital logic control-based photonic computing unit of claim 34, wherein: the modulator based on the dispersion effect of phase change material further comprises a set of phase change material layers (7) deposited on the optical waveguide (6) 1 ……7 n ) The signal generator (5) generates an electrical signal, whichThe set of phase change material layers (7 1 ……7 n ) And the electrical signal is used as an external stimulus to change the state of the phase change material, the state of the phase change material is represented by modifying the refractive index of the optical waveguide containing the phase change material for light, the group of phase change material layers (7 1 ……7 n ) Is of a thickness of 1nm to 1 μm, which receives a modulating voltage of the signal generator (5) of a magnitude such that the set of phase change material layers (7 1 ……7 n ) The modulation depth proportion relation of light in crystalline state is as follows: 2 0 :2 1 :2 2 :2 3 ……2 n-2 :2 n-1 。
40. The digital logic control based photonic computing unit of claim 39, wherein: the length of each modulator is 1-1000 mu m.
41. The digital logic control based photonic computing unit of claim 39, wherein the voltage amplitude of the electrical signal is less than 20V for a duration of less than 100ms.
42. The digital logic control based photonic computing unit of claim 39, wherein: the phase change material has at least two stable states including crystalline and amorphous states at normal pressure within the CMOS operating temperature range.
43. The digital logic control based photonic computing unit of claim 39, wherein: the phase change material has a difference in refractive index between its different stable states, crystalline and amorphous.
44. The digital logic control based photonic computing unit of claim 39, wherein: the surface of the phase change material layer (7) is covered with an oxide layer, and the material of the oxide layer is silicon dioxide (SiO 2 ) ITO, alumina (Al 2 O 3 ) The thickness of the oxide layer is 30 nm-3 mu m.
CN202311250257.8A 2023-09-26 2023-09-26 Photon calculation unit based on digital logic control Pending CN117294358A (en)

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