CN117293648A - Broadband chaotic entropy source based on cascade injection of modulated semiconductor laser - Google Patents
Broadband chaotic entropy source based on cascade injection of modulated semiconductor laser Download PDFInfo
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- CN117293648A CN117293648A CN202310472975.3A CN202310472975A CN117293648A CN 117293648 A CN117293648 A CN 117293648A CN 202310472975 A CN202310472975 A CN 202310472975A CN 117293648 A CN117293648 A CN 117293648A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 230000000739 chaotic effect Effects 0.000 title claims abstract description 62
- 238000002347 injection Methods 0.000 title claims abstract description 41
- 239000007924 injection Substances 0.000 title claims abstract description 41
- 238000001228 spectrum Methods 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims description 11
- 230000003993 interaction Effects 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- 238000004891 communication Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/001—Modulated-carrier systems using chaotic signals
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Abstract
The invention belongs to the technical field of chaotic communication, and particularly relates to a broadband chaotic entropy source structure based on cascade injection of modulated semiconductor lasers, which comprises N directly modulated single-mode semiconductor lasers and a photoelectric detector, and is characterized in that: the single-mode semiconductor lasers are enabled to output multimode laser signals through direct modulation, and then a cascade injection method is utilized, so that the next laser after each injection excites new frequency components, and the detuning of each frequency component and an original longitudinal mode is gradually increased. After cascade injection is carried out for many times, a plurality of longitudinal modes of the last semiconductor laser and frequency components which are excited by the last semiconductor laser are mutually connected, an ultra-wideband chaotic entropy source signal with greatly enhanced spectrum bandwidth is finally realized after photoelectric conversion, and the spectrum bandwidth for generating the chaotic entropy source signal can be customized by adjusting the number of the cascade semiconductor lasers according to application requirements.
Description
Technical Field
The invention belongs to the field of chaotic laser communication, and particularly relates to broadband chaotic signal generation based on cascade injection of a modulated semiconductor laser.
Background
The chaotic laser has important application value in the fields of chaotic secret communication, high-speed physical random number generation, chaotic laser radar, distributed optical fiber sensing and the like due to the characteristics of noise-like, large-amplitude oscillation, wide frequency spectrum and the like. Chaotic laser generation can be realized by applying external disturbance to the semiconductor laser, and common external disturbance modes include external cavity optical feedback, photoelectric feedback, optical injection and the like.
For an external cavity feedback semiconductor laser, due to the optical feedback effect of the external cavity of the laser, the interaction balance of carriers and photons in a laser medium is easily disturbed, the stability of the laser is damaged, and the complexity of laser dynamics is increased so as to output chaotic laser. However, the chaotic laser output by the external cavity feedback semiconductor laser occupies main energy, so that the bandwidth is narrow, usually only a few GHz, which is unfavorable for the use of the chaotic laser. When the photoelectric feedback semiconductor laser generates chaos, the photoelectric detector is required to convert the optical signal output by the laser into an electric signal and feed the electric signal back to the pumping current. However, the bandwidth of the chaos generated by photoelectric feedback is often limited by a photoelectric detector and an electronic element, so that the bandwidth of the output chaos signal is low, and the information transmission rate, the generation rate of a physical random number, the resolution of a chaos radar and the like in chaos safety communication are influenced by a narrowband chaos signal.
In contrast, the perturbation mode of optical injection or mutual injection is a common means for improving chaotic bandwidth. However, the bandwidth of the chaotic signal generated based on the optical injection disturbance is still limited. Based on the method, in order to effectively improve the chaotic bandwidth, the application provides a method for directly modulating a plurality of single-mode semiconductor lasers through an external signal source, and the generation of the chaotic signal with the bandwidth enhanced is realized by combining a cascade injection structure.
Disclosure of Invention
The invention aims to solve the problem of insufficient bandwidth of a chaotic entropy source in the prior art, and provides a method for realizing a broadband chaotic entropy source based on cascade injection of a modulating semiconductor laser so as to generate a broadband chaotic signal with enhanced bandwidth and flat frequency spectrum.
The invention can be realized by adopting the following technical measures, and designs a broadband chaotic entropy source structure based on cascade injection of a modulated semiconductor laser, which is characterized in that:
the device comprises N directly modulated single-mode semiconductor lasers and a photoelectric detector which are sequentially connected, wherein all the single-mode semiconductor lasers need to be directly modulated. The optical signal output by the single-mode semiconductor laser after direct modulation generates modulation sidebands in the spectrum to form multi-longitudinal-mode laser with controllable mode interval (by adjusting the modulation frequency of the direct modulation signal). Second directly modulated single-mode semiconductor laser SL 2 In the first directly modulated single-mode semiconductor laser SL 1 Under the injection of the output multi-longitudinal mode laser, the corresponding modes of the two multi-longitudinal mode lasers can interact to generate new frequency components. The second single-mode semiconductor laser SL after injection due to the different modulation frequencies applied by the two lasers 2 The frequency mismatch between the generated new rate component and the original mode thereof is gradually increased, and a plurality of laser modes with different frequency mismatch are spliced with each other and are formed by a single-mode semiconductor laser SL 2 And outputting the chaotic laser signal with the bandwidth being primarily enhanced. Similarly, a semiconductor laser SL is to be used 2 The output bandwidth-enhanced chaotic laser is injected into a third directly modulated single-mode semiconductor laser SL 3 In the chaotic laser with enhanced bandwidth and semiconductor laser SL 3 The generated multi-longitudinal mode laser interacts to excite new laser mode and frequency component again, and the detuning of each frequency component and original mode further increases, thereby making the laser SL 3 The output chaotic signal is compared with SL 2 Will further increase. Sequentially cascade-injecting the single-mode semiconductor lasers which are directly modulated step by step, reasonably setting the central wavelength of each single-mode semiconductor laser, and cascade-injecting the single-mode semiconductor lasers step by stepThe new frequency components generated by the multimode chaotic laser are increased step by step, the detuning is increased along with the increase, finally, the output spectrums are sequentially connected, the spectrums of the chaotic signals output after photoelectric conversion of the Photoelectric Detector (PD) are spliced, and finally, the high-broadband chaotic signal with flat spectrums is generated.
The number N of single-mode semiconductor lasers connected in sequence is more than or equal to 3, so that interaction among directly modulated single-mode lasers cascaded step by step can generate enough new frequency components in different wavelength ranges;
each single-mode semiconductor laser adopts a sinusoidal signal to directly modulate pumping current, so that multi-longitudinal-mode lasers with different intensities, different mode numbers and different mode intervals are generated. The modulation frequency and the modulation depth are adjusted, so that the output spectrum of the laser can generate a plurality of modulation sidebands, and the single-mode semiconductor laser is changed into a multimode laser; changing the modulation frequency f of the modulated signal m The longitudinal mode interval of the multimode laser can be controlled, the modulation depth m of the modulation signal can be changed, and the longitudinal mode intensity of the multimode laser can be controlled;
the central wavelength and the injection intensity can be changed by adjusting the temperature controllers of the semiconductor lasers, so that the spectrum and the spectrum characteristics of final chaos, such as spectrum linewidth, spectrum bandwidth and flatness, are controlled;
wherein by a directly modulated single-mode semiconductor laser SL 1 The output original multi-longitudinal mode laser is unidirectionally injected into a directly modulated single-mode semiconductor laser SL 2 In which SL is again combined with 2 The output multimode chaotic laser is injected into a third directly modulated single-mode semiconductor laser SL 3 ，SL 3 The output chaotic laser is sequentially injected into lasers with different center wavelengths step by step, so that a plurality of adjacent modes of each laser are mutually disturbed and spliced to generate new laser frequencies in different frequency ranges, and a plurality of multimode laser cascade injection disturbance structures are formed;
wherein, the modulation frequencies applied by the lasers are different, and the modulation frequency difference between two adjacent modulation signals is smaller than the spectral linewidth of a single mode of the semiconductor laser after direct modulation.
Compared with the prior art, the broadband chaotic entropy source based on the cascade injection of the modulated semiconductor laser has the following characteristics:
1. the invention utilizes the radio frequency signal generator to provide sine electric signals for N single-mode semiconductor lasers for direct modulation, the laser spectrum output by the single-mode semiconductor lasers after modulation has modulation sidebands to form a plurality of laser longitudinal modes, and the mode interval and the intensity of each mode can be changed by adjusting the modulation frequency and the modulation depth of the modulation signals, so that the generation of multi-longitudinal-mode laser is easy to realize and convenient to adjust.
2. The generated chaotic signal can be used for adjusting the injection frequency detuning and the injection intensity of the single-mode semiconductor laser by adjusting the temperature controllers and the bias currents of the N single-mode semiconductor lasers so as to control the spectrum and the spectrum characteristics of the output chaos of the previous stage injection and the subsequent stage.
3. The number of cascaded direct modulation single-mode semiconductor lasers can be customized according to the requirements of chaotic entropy source bandwidths in practical application, interaction among the lasers can excite enough new frequency components in different wavelength ranges, and the bandwidth of output chaotic signals can reach hundreds of GHz at most.
4. Compared with chaos generated by a traditional single-mode semiconductor laser in modes of optical feedback, photoelectric feedback, optical injection and the like, the chaos output by the scheme is flat in frequency spectrum, high in bandwidth and easy to regulate and control.
Drawings
Fig. 1 is a schematic diagram of a broadband chaotic entropy source structure based on cascade injection of a plurality of modulated semiconductor lasers.
Fig. 2 is a schematic spectrum diagram of cascade injection of a plurality of single-mode semiconductor lasers directly modulated according to the present invention.
Fig. 3 is a schematic spectrum diagram of cascade injection based on modulating a plurality of single-mode semiconductor lasers according to the present invention.
Detailed Description
The invention will now be further described with reference to the accompanying drawings and specific embodiments, which are not in any way limiting. Based on the practice of the invention, any other practice that would be achieved by one skilled in the art without the inventive effort would fall within the scope of the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a wideband chaotic entropy source based on cascade injection of a modulated semiconductor laser according to the present invention.
N single-mode semiconductor lasers (SL 1 、SL 2 ...SL N ) Wherein all single-mode semiconductor lasers need to be directly modulated. The optical signal output by the single-mode semiconductor laser after direct modulation generates upper and lower modulation sidebands in the spectrum to form multi-longitudinal-mode laser with controllable mode interval. By adjusting the frequency f of the directly modulated electrical signal m The spacing of each longitudinal laser mode of the semiconductor laser can be varied as shown in fig. 2, which is a spectral diagram of the output of a cascade of N directly modulated single mode semiconductor lasers, with the light gray line representing the first single mode semiconductor laser SL 1 The spectrum output after direct modulation has a center wavelength lambda 1 The mode interval is f m1 (equal to the modulation frequency f m1 ) The method comprises the steps of carrying out a first treatment on the surface of the The gray line represents the second single-mode semiconductor laser SL 2 The spectrum output after direct modulation has a center wavelength lambda 2 The mode interval is f m2 (equal to the modulation frequency f m2 ) A first modulated single-mode semiconductor laser SL in the vicinity of each mode 1 Longitudinal modes of the laser produced, and these longitudinal modes are relative to SL 2 Has a different detuning value for each longitudinal mode of (a); black lines represent a third single-mode semiconductor laser SL 3 The spectrum output after direct modulation has a center wavelength lambda 3 The mode interval is f m3 (equal to the modulation frequency f m3 ) In the vicinity of each mode there is a first and a second modulated single-mode semiconductor laser SL 1 、SL 2 Longitudinal modes are generated and are relative to SL 3 Has a different detuning value for each longitudinal mode of (a); similarly, a plurality of directly modulated single-mode semiconductor lasers are cascaded in a cascade.
]Second single-mode semiconductor laser SL for generating multi-longitudinal-mode laser through modulation 2 In a first single-mode semiconductor laser SL with direct modulation 1 Semiconductor laser SL during injection of output multi-longitudinal mode laser 2 Will be subjected to corresponding SL 1 The new frequency components are excited by the action of multiple longitudinal modes, and the frequency mismatch of the new frequency components relative to the original mode gradually increases, and the frequency spectrums of multiple laser modes with different frequency mismatch are spliced by the single-mode semiconductor laser SL 2 Output bandwidth of the first single-mode semiconductor laser SL of the N-stage cascade structure of fig. 3 2 And (5) outputting a spectrogram.
Second semiconductor laser SL 2 The output multimode chaotic laser is injected into a third single-mode semiconductor laser SL which generates multimode laser through direct modulation 3 In (2) due to chaotic laser and modulated semiconductor laser SL 3 The generated multi-longitudinal mode lasers interact such that the semiconductor laser SL 3 New frequency components are excited near each mode and the detuning of each frequency component and the original longitudinal mode gradually increases, thereby increasing the bandwidth. See SL in fig. 3 3 The output second spectrogram, the output bandwidth of the chaotic laser signal after photoelectric conversion is compared with SL 2 And further improving the chaotic signal.
Will SL (SL) 3 The output chaotic signals are sequentially injected into single-mode semiconductor lasers with different center wavelengths and subjected to direct modulation in a cascading way, and the chaotic signals with different wave bands are subjected to spectrum splicing after photoelectric conversion and finally subjected to N-th semiconductor laser SL through interaction of multimode chaotic lasers and multimode lasers N Ultra-high wideband chaos with flat output frequency spectrum. The number of cascaded single-mode semiconductor lasers can be customized according to application requirements and in the followingAn ultra-wideband chaotic signal with the bandwidth reaching hundreds of GHz can be theoretically generated.
Compared with the prior art, the broadband chaotic entropy source structure based on the cascade injection of the modulated semiconductor laser has the following advantages:
1. the invention can theoretically generate a chaotic entropy source signal with ultra-high bandwidth of frequency spectrum by utilizing light injection, cascade structure and direct modulation technology, and has flat frequency spectrum and complex frequency characteristic;
2. the output characteristics of the chaotic signal of the invention depend on the number of cascade lasers, injection parameters (the center and the injection intensity of a single-mode semiconductor laser), modulation parameters (the modulation depth m and the modulation frequency f m ) Therefore, the output chaotic signal is regulated and customized according to the requirement on bandwidth;
3. the broadband chaotic signal generated by the invention is formed by splicing frequency spectrums of a plurality of different frequency components excited after injection in multi-longitudinal-mode laser generated by directly modulating a single-mode semiconductor laser in cascade, so that the ultra-broadband chaotic signal with the frequency spectrum bandwidth reaching hundreds of GHz can be theoretically realized.
The foregoing is merely illustrative of specific embodiments of the present invention and is not intended to limit the scope of protection of the patent to the extent that those skilled in the art will readily understand. The invention is also in the scope of patent protection, as related limitations in the specification and its appendages are applied directly or indirectly to other related scientific aspects in various equivalent forms or methods.
Claims (6)
1. A broadband chaotic entropy source based on cascade injection of a modulated semiconductor laser is characterized in that: the device comprises N directly modulated single-mode semiconductor lasers and a photoelectric detector which are sequentially connected, wherein all the single-mode semiconductor lasers need to be directly modulated. The optical signal output by the single-mode semiconductor laser after direct modulation generates modulation sidebands in the spectrum to form multi-longitudinal-mode laser with controllable mode interval; the second directly modulated single-mode semiconductor laser can interact with corresponding modes of the first two multi-longitudinal-mode lasers under the injection of the multi-longitudinal-mode lasers output by the first directly modulated single-mode semiconductor laser to generate new frequency components; further, the chaotic laser with the enhanced bandwidth output by the second semiconductor laser is injected into a third directly modulated single-mode semiconductor laser, so that a new laser mode and frequency components can be excited again; in the single-mode semiconductor lasers which are sequentially cascaded and injected to be directly modulated, new frequency components generated by multi-mode chaotic laser which is sequentially cascaded and injected are gradually increased, finally, the output spectrums are sequentially connected, and the spectrums of the chaotic signals which are output after photoelectric conversion are spliced to finally generate the high-broadband chaotic signals with flat spectrums.
2. A wideband chaotic entropy source based on cascade injection of modulated semiconductor lasers as claimed in claim 1, characterized in that: the number N of single-mode semiconductor lasers connected in sequence is more than or equal to 3, so that interaction among directly modulated single-mode lasers cascaded step by step can generate enough new frequency components in different wavelength ranges.
3. A wideband chaotic entropy source based on cascade injection of modulated semiconductor lasers as claimed in claim 1, characterized in that: each single-mode semiconductor laser directly modulates the pumping current of the single-mode semiconductor laser by adopting a sinusoidal signal, so as to generate multi-longitudinal-mode laser.
4. A wideband chaotic entropy source based on cascade injection of modulated semiconductor lasers as claimed in claim 1, wherein: the longitudinal mode interval of the multimode laser can be controlled by changing the modulation frequency of the modulation signals of each single-mode laser; by changing the modulation depth of the modulation signal, the longitudinal mode intensity of the multimode laser can be controlled.
5. A wideband chaotic entropy source based on cascade injection of modulated semiconductor lasers as claimed in claim 1, wherein: the center wavelength and the injection intensity can be changed by adjusting the temperature controller of each semiconductor laser, so that the spectrum and the spectrum characteristics of the final chaos, such as spectrum linewidth, spectrum bandwidth and flatness, are controlled.
6. A wideband chaotic entropy source based on cascade injection of modulated semiconductor lasers as claimed in claim 1, wherein: the modulation frequencies applied by the respective lasers are different, and the modulation frequency difference between two adjacent modulation signals should be smaller than the spectral linewidth of a single mode of the semiconductor laser after direct modulation.
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