CN117293104B - SIC device heat dissipation packaging structure and packaging method - Google Patents
SIC device heat dissipation packaging structure and packaging method Download PDFInfo
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- CN117293104B CN117293104B CN202311587616.9A CN202311587616A CN117293104B CN 117293104 B CN117293104 B CN 117293104B CN 202311587616 A CN202311587616 A CN 202311587616A CN 117293104 B CN117293104 B CN 117293104B
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 38
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000002826 coolant Substances 0.000 claims abstract description 63
- 238000012546 transfer Methods 0.000 claims abstract description 24
- 239000003507 refrigerant Substances 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 105
- 238000005192 partition Methods 0.000 claims description 21
- 239000012530 fluid Substances 0.000 claims description 15
- 238000005476 soldering Methods 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 239000004519 grease Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 239000004814 polyurethane Substances 0.000 claims description 6
- 229920005749 polyurethane resin Polymers 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- -1 acrylic ester Chemical class 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 3
- 125000006850 spacer group Chemical group 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 93
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 92
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000000110 cooling liquid Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a radiating packaging structure and a radiating packaging method for a SiC device, and belongs to the technical field of SiC device packaging. A heat dissipation packaging structure of a SiC device comprises an assembly module for placing the SiC device and communicating the SiC device with an external circuit. The heat transfer assembly has a first cavity and a second cavity therein for receiving a refrigerant. The heat transfer component is close to the outer wall of the first cavity and is used for being abutted against the SiC device, and the heat transfer component and the assembly module are surrounded to form a containing cavity for placing the SiC device. One end of the heat absorbing member is positioned in the second cavity and is used for absorbing heat of coolant steam in the second cavity so as to liquefy the coolant in the second cavity, and the other end of the heat absorbing member is positioned outside the heat transfer assembly and is used for releasing heat to the outside. The heat transfer assembly has a first passage and a second passage therein, and vapor of the coolant in the first chamber enters the second chamber from the first passage. The coolant in the second cavity enters the first cavity from the second channel, and the heat absorbing piece is electrically connected with the temperature control circuit through the assembly module.
Description
Technical Field
The invention belongs to the technical field of SiC device packaging, and particularly relates to a SiC device heat dissipation packaging structure and a packaging method.
Background
SiC (silicon carbide) elements refer to electronic or electrical devices manufactured based on silicon carbide materials. Silicon carbide is a semiconductor material with excellent performance, has the characteristics of high melting point, high hardness, high thermal conductivity, high electron mobility and the like, and ensures that the SiC device has excellent performance in special environments such as high temperature, high frequency, high voltage and the like. SiC devices are widely used in high voltage, high temperature, high frequency power conversion systems to replace conventional silicon power devices. SiC devices typically require packaging to protect the components themselves and to provide proper pin connections. Packaging is the process of placing a chip or device in a suitable packaging material and connecting with external circuitry through pins.
The patent with the bulletin number of CN112670278A name refers to a chip packaging structure and a chip packaging method, wherein the chip packaging structure comprises a substrate, a carrier plate is arranged above the substrate, at least one chip is arranged on the upper surface of the carrier plate, and at least one chip is also arranged on the lower surface of the carrier plate; an electrical connection structure for connecting the carrier plate and the substrate is arranged between the carrier plate and the substrate.
However, the prior art typified by the above patent has the following technical problems: the SiC device is only subjected to heat dissipation through the metal sheet adjacent to the chip, for example, the SiC device is higher in working temperature due to the fact that the heat dissipation efficiency of the package for the SiC device is low, and the service life of the SiC device is seriously reduced.
Disclosure of Invention
The invention provides a SiC device heat dissipation packaging structure and a packaging method, which are used for solving the technical problem that the existing SiC device packaging structure is low in heat dissipation efficiency.
In order to achieve the above purpose, the present invention is realized by the following technical scheme: in one aspect, a heat dissipation package structure for a SiC device is provided that includes an assembly module, a heat transfer assembly, and a heat sink. The assembly module is used for placing the SiC device and communicating the SiC device with an external circuit. The heat transfer assembly has a first cavity and a second cavity therein for receiving a refrigerant. The heat transfer component is close to the outer wall of the first cavity and is used for being abutted against the SiC device, and the heat transfer component and the assembly module are surrounded to form a containing cavity for placing the SiC device. One end of the heat absorbing member is positioned in the second cavity and is used for absorbing heat of coolant steam in the second cavity so as to liquefy the coolant in the second cavity, and the other end of the heat absorbing member is positioned outside the heat transfer assembly and is used for releasing heat to the outside. The heat transfer assembly has a first passage and a second passage therein, and vapor of the coolant in the first chamber enters the second chamber from the first passage. The coolant in the second cavity enters the first cavity from the second channel, and the heat absorbing piece is electrically connected with the temperature control circuit through the assembly module.
Through the structure, the cooling liquid in the first cavity and the cooling liquid in the second cavity can be circulated without a driving piece, so that the temperature of the first cavity can be quickly reduced, and the cooling capacity of the SiC device is improved. Specifically, when the SiC device is in use, the temperature increases such that the temperature within the first cavity increases, thereby causing the coolant within the first cavity to warm up and vaporize, to maintain the SiC device and the temperature within the first cavity. The vapor of the coolant then enters the second chamber from the first passage and is liquefied by absorbing heat at one end of the heat absorbing member located in the second chamber, and the liquefied coolant then enters the first chamber along the second passage and reduces the temperature of the coolant in the first chamber and cools the SiC device, thereby forming a cycle. To reciprocate in order to maintain the temperature of the SiC device at a lower temperature.
Optionally, the heat transfer assembly includes a housing, a baffle, and a base plate. An opening communicated with the inside of the shell is formed in one side of the shell. One end of the partition plate is mounted on the inner wall of the housing away from the opening, and the other end of the partition plate is mounted on the inner peripheral side of the housing. The second cavity is formed by enclosing the partition plate and the shell. The shell is provided with a mounting hole communicated with the second cavity, and the middle part of the heat absorbing piece is inserted into the mounting hole. One end of the heat absorbing member is positioned in the second cavity and used for absorbing heat in the second cavity, and the other end of the heat absorbing member is positioned outside the shell and used for releasing heat to the outside. The partition plate is provided with a first channel, and the first channel is far away from the opening. The second channel is composed of a first connecting channel and a second connecting channel which are communicated with each other. The first connecting channel is positioned on one end of the partition board close to the opening, and one end of the first connecting channel is positioned in the second cavity. The bottom plate is inserted in the opening to close the opening, and the first cavity is formed by surrounding the inner wall of the shell, the bottom plate and the partition plate. The second connecting channel is positioned in the bottom plate, and one end of the second connecting channel is communicated with the other end of the first connecting channel, which is close to the opening. The other end of the second connecting channel is positioned in the first cavity, and the bottom plate is used for abutting against the SiC device to absorb heat of the SiC device.
Optionally, the first channel includes a first airway, a second airway, and a third airway. The two ends of the first air passage are respectively communicated with the first cavity and the second cavity, and the first air passage is positioned at one end of the partition board far away from the opening. One end of the second air passage is communicated with the first air passage, and the distance between the axis of the second air passage and the axis of the first air passage is gradually reduced along the direction approaching to the second cavity. One end of the third air passage is communicated with the first air passage, and the distance between the axis of the third air passage and the axis of the first air passage is gradually reduced along the direction approaching to the second cavity. The other end of the third air passage is communicated with the other end of the second air passage. The second air passage and the third air passage are sequentially and alternately distributed on two opposite sides of the first air passage along the axis of the first air passage.
Optionally, the second connection channel includes a first fluid channel, a second fluid channel, and a third fluid channel. The first liquid channel is positioned in the bottom plate and is provided with a first end and a second end. The first end is communicated with the other end of the first connecting channel. The second end is communicated with the first cavity and is positioned in the middle of the bottom plate, and the first end and the second end are both positioned on the side face of the bottom plate facing the opening. One end of the second liquid channel is communicated with the middle part of the first liquid channel, and the distance between the axis of the second liquid channel and the axis of the first liquid channel is gradually reduced along the direction close to the first cavity. One end of the third liquid channel is communicated with the middle part of the first liquid channel, and the distance between the axis of the third liquid channel and the axis of the first liquid channel is gradually reduced along the direction close to the first cavity. The other end of the third liquid channel is communicated with the other end of the second liquid channel. The second liquid channel and the third liquid channel are alternately distributed on two opposite sides of the first liquid channel in sequence along the axis of the first liquid channel.
Optionally, the SiC device heat dissipation package structure further includes a thermistor. The shell is provided with a groove corresponding to the thermistor on the outer side far away from the opening, and the thermistor is arranged in the groove and is electrically connected with the temperature control circuit through the assembly module.
Optionally, a side of the partition within the first cavity has a guiding surface.
Optionally, the assembly module includes a housing, a base, a first pin, and a second pin. The housing is mounted on the side of the shell adjacent the opening. The accommodating cavity is formed by enclosing the shell and the side surface of the bottom plate, which is far away from the shell. The base is mounted on the inner side of the housing away from the housing and is provided with a placement groove for placing the SiC device. The first pin is arranged on the shell, and one end of the first pin is positioned in the accommodating cavity and is electrically connected with the SiC device. The other end of the first pin is positioned outside the shell and is used for being electrically connected with an external circuit. The middle part of the second pin is arranged on the shell, and one end of the second pin is positioned outside the shell and is used for being electrically connected with the thermistor and the heat absorbing piece. The other end of the second pin is positioned outside the shell and is used for being electrically connected with the temperature control circuit.
Optionally, the assembly module further comprises a circuit board. The circuit board is mounted on the outside of the housing remote from the opening. One end of the second pin is arranged on the circuit board, and the thermistor is arranged on the circuit board and is electrically connected with the second pin through the circuit board. The heat absorbing member is electrically connected with the circuit board and is electrically connected with the second pin through the circuit board.
Optionally, the SiC device heat dissipation package further includes a connector. The SiC device is electrically connected to the first pin member through the connection member.
On the one hand, in order to better realize the invention, the packaging method based on the SiC device heat dissipation packaging structure comprises the following steps: s1, mounting the base on the inner wall of the shell far away from the shell through a eutectic process or a high-heat-conductivity silver adhesive process. And a placing groove is formed in the base, and the SiC device is placed in the placing groove. S2, respectively mounting two ends of the connecting piece on the first pin and the SiC device through a gold wire bonding process. So that the first pins are communicated with electrodes of the SiC device one by one, and heat conduction silicone grease is smeared on the SiC device. S3, dripping coolant into the shell through the mounting hole. And the middle part of the heat absorbing piece is adhered to the inside of the mounting hole through polyurethane or epoxy resin, so that one end of the heat absorbing piece is positioned in the second cavity, the other end of the heat absorbing piece is positioned outside the shell, and the mounting hole is closed. And S4, welding the thermistor on the circuit board through soldering, and coating heat-conducting silicone grease on the surface of the thermistor. And S5, bonding the circuit board on one side of the shell far away from the opening through a high-heat-conductivity silver adhesive bonding process, and enabling the thermistor to be inserted into the groove. The pads of the heat absorbing member are soldered to the circuit board by soldering. S6, bonding the shell on the shell through acrylic ester, polyurethane or epoxy resin. So that the bottom plate and the inner wall of the shell are surrounded to form a containing cavity, and the bottom plate is abutted with the SiC device to complete the encapsulation of the SiC device.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a heat dissipation package structure of a SiC device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a heat dissipation package structure of the SiC device in the direction a in fig. 1;
FIG. 3 is a cross-sectional view taken along the path B-B in FIG. 2;
FIG. 4 is a cross-sectional view taken along the path C-C in FIG. 3;
FIG. 5 is an enlarged view of D1 of FIG. 4;
FIG. 6 is an enlarged view of FIG. 4 at D2;
FIG. 7 is a cross-sectional view taken along the path E1-E1 in FIG. 4;
fig. 8 is an enlarged view of F in fig. 7;
FIG. 9 is an enlarged view of F in FIG. 7 with a first channel of a heat spreader package for a SiC device in a second station;
FIG. 10 is a cross-sectional view taken along the path E2-E2 in FIG. 4;
Fig. 11 is an enlarged view of G in fig. 10;
FIG. 12 is an enlarged view of portion G of FIG. 10 with a second channel of the SiC device heat dissipation package structure at a second station;
FIG. 13 is an exploded view of a heat transfer assembly provided in an embodiment of the present invention;
FIG. 14 is an enlarged view of the portion I1 of FIG. 13;
FIG. 15 is an enlarged view of the portion I2 of FIG. 13;
FIG. 16 is an enlarged view of the portion I3 of FIG. 13;
FIG. 17 is an exploded view of a floor provided in an embodiment of the present invention;
FIG. 18 is an exploded view of a separator provided in an embodiment of the present invention;
FIG. 19 is an exploded view of an assembly module according to an embodiment of the present invention;
fig. 20 is a schematic structural diagram of an assembly module according to an embodiment of the invention.
In the figure:
1-assembling a module; 101-a receiving chamber; 11-a housing; 12-a base; 121-a placement groove; 13-a first pin; 14-a second pin; 15-a circuit board; 16-a connector; 2-a heat transfer assembly; 201-a first cavity; 202-a second cavity; 203-a first channel; 204-a second channel; 21-a housing; 211-grooves; 212-mounting holes; 22-a separator; 221-baffle; 222-cover plate; 223-guide surface; 22A-first airway; 22B-a second airway; 22C-third airway; 22D-a first preset pad; 22E-first connection; 23-a bottom plate; 231-a first mounting plate; 232-a second mounting plate; 233-a second connection; 23A-a first fluid path; 23B-a second fluid path; 23C-a third fluid path; 23D-a second preset pad; 23E-a first end; 23F-second end; 24-thermistor; 3-a heat absorbing member; a 4-SiC device; 5-refrigerant.
Detailed Description
Embodiments of the present application are described in detail below with reference to the accompanying drawings.
In the description of the present application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate description of the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
Examples
The patent with the bulletin number of CN112670278A name refers to a chip packaging structure and a chip packaging method, wherein the chip packaging structure comprises a substrate, a carrier plate is arranged above the substrate, at least one chip is arranged on the upper surface of the carrier plate, and at least one chip is also arranged on the lower surface of the carrier plate; an electrical connection structure for connecting the carrier plate and the substrate is arranged between the carrier plate and the substrate.
However, the prior art typified by the above patent has the following technical problems: the SiC device is only subjected to heat dissipation through the metal sheet adjacent to the chip, for example, the SiC device is higher in working temperature due to the fact that the heat dissipation efficiency of the package for the SiC device is low, and the service life of the SiC device is seriously reduced.
In order to solve the above-mentioned technical problem, the present embodiment provides, on the one hand, a heat dissipation package structure of a SiC device 4, where the heat dissipation package structure of a SiC device 4 includes, as shown in fig. 1, an assembly module 1, a heat transfer member 2, and a heat absorbing member 3.
The mounting module 1 shown in fig. 3 is used for placing the SiC device 4, as shown in fig. 2 and 3, and for communicating the SiC device 4 with an external circuit. The heat transfer assembly 2 has a first cavity 201 and a second cavity 202 therein for receiving the refrigerant 5 as shown in fig. 4. As shown in fig. 3 and 4, the heat transfer assembly 2 is close to the outer wall of the first cavity 201 for abutting against the SiC device 4, and forms a containing cavity 101 for placing the SiC device 4 with the assembly module 1.
One end of the heat absorbing member 3 is located in the second chamber 202 as shown in fig. 4, and serves to absorb heat of the coolant vapor in the second chamber 202 to liquefy the coolant in the second chamber 202, and the other end of the heat absorbing member 3 is located outside the heat transfer assembly 2 and serves to release heat to the outside. The heat absorbing member 3 is electrically connected with the temperature control circuit through the assembly module 1.
The heat absorbing member 3 is a semiconductor refrigerator, and the semiconductor refrigerator (Thermoelectric cooler) is a device for producing cold by using the thermoelectric effect of a semiconductor, and is also called a thermoelectric refrigerator. The bismuth telluride element is manufactured by adopting heavily doped N-type and P-type bismuth telluride and two ceramic electrodes, and the bismuth telluride elements are electrically connected in series and generate heat in parallel. The semiconductor refrigerator includes a number of P-type and N-type pairs (sets) that are connected together by electrodes and sandwiched between two ceramic electrodes. When current flows through the semiconductor refrigerator, heat generated by the current can be transferred from one side of the semiconductor refrigerator to the other side, and a hot side and a cold side are generated on the semiconductor refrigerator (namely, the Peltier effect is a phenomenon that when direct current passes through a couple composed of two semiconductor materials, one end of the direct current absorbs heat and the other end of the direct current releases heat). Therefore, the heat absorbing member 3 can absorb heat from the second cavity 202 under the control of the temperature control circuit, and can release heat to the second cavity 202 by changing the current flow direction, so that the temperature in the first cavity 201 is increased, the operating temperature of the SiC device 4 is increased, and the SiC device 4 is prevented from being damaged due to the operation of the SiC device 4 at too low temperature.
The heat transfer assembly 2 has a first channel 203 and a second channel 204 therein as shown in fig. 4-6. As shown in fig. 4 and 5, the vapor of the coolant in the first chamber 201 enters the second chamber 202 from the first passage 203 in the N2 direction. The coolant in the second chamber 202 enters the first chamber 201 from the second passage 204 in the direction N3 as shown in fig. 4 and 6.
It is apparent that the second channel 204 should be located between the first channel 203 and the SiC device 4. And the bottom surface of the second chamber 202 should have a distance from the bottom surface of the first chamber as shown in fig. 4 such that the distance H 'from the liquid surface of the coolant cooled and liquefied by the heat absorbing member 3 to the first chamber 201 and the distance H from the liquid surface of the coolant in the first chamber 201 to the bottom surface of the first chamber 201 satisfy H' > H such that the hydraulic pressure is greater than the air pressure in the first chamber 201, so that the coolant in the second chamber 202 enters the first chamber 201 from the second passage 204 in the N3 direction as shown in fig. 4 and 6.
Note that the package structure mentioned in this embodiment should be suitable for the SiC device 4 operating in the horizontal plane, and diethyl ether or ethanol is used as the coolant.
Through the above structure, according to the heat dissipation packaging structure of the SiC device 4 provided by this embodiment, the cooling liquid in the first cavity 201 and the second cavity 202 can be circulated without a driving piece, so that the temperature of the first cavity 201 is rapidly reduced, and the heat dissipation capability of the SiC device 4 is further improved. Specifically, in use, the SiC device 4 increases in temperature, thereby increasing the temperature within the first cavity 201, which in turn causes the coolant within the first cavity 201 to warm up and vaporize, to maintain the SiC device 4 and the temperature within the first cavity 201.
The vapor of the subsequent coolant is adjacent to the first passage 203 in the N1 direction as shown in fig. 4. And enters the second chamber 202 from the first passage 203 in the direction N2 as shown in fig. 5, and is liquefied by absorbing heat by one end of the heat absorbing member 3 located in the second chamber 202, and is accumulated on the bottom surface of the second chamber 202. The subsequently liquefied coolant passes through the second passage 204 in the direction N3 into the first chamber 201 as shown in fig. 6, and lowers the temperature of the coolant in the first chamber 201, and cools the SiC device 4, thereby forming a cycle. To reciprocate in order to maintain the temperature of the SiC device 4 at a lower temperature.
Based on the above-described basis. The heat transfer assembly 2, as shown in fig. 13, includes a housing 21, a partition 22, and a bottom plate 23. An opening communicating with the inside of the housing 21 is opened on one side of the housing 21. One end of the partition 22 is mounted on an inner wall of the housing 21 remote from the opening as shown in fig. 4, and the other end of the partition 22 is mounted on an inner peripheral side of the housing 21. The second cavity 202 is defined by the partition 22 and the housing 21. As shown in fig. 13, the housing 21 is provided with a mounting hole 212 communicating with the second chamber 202, and the middle part of the heat absorbing member 3 is inserted into the mounting hole 212. One end of the heat absorbing member 3 is located in the second cavity 202 and is used for absorbing heat in the second cavity 202, and the other end of the heat absorbing member 3 is located outside the housing 21 and is used for releasing heat to the outside. The partition plate 22 is provided with first passages 203 as shown in fig. 5, the first passages 203 are far from the opening, and the first passages 203 are uniformly distributed on the partition plate 22 in a direction parallel to the end face of the heat absorbing member 3 located in the second chamber 202 as shown in fig. 7. The second passage 204 is composed of a first connecting passage 22E and a second connecting passage 233 which communicate with each other as shown in fig. 6. As shown in fig. 6 and 16, the first connecting passage 22E is located at an end of the partition 22 near the opening, and an end of the first connecting passage 22E is located in the second chamber 202. The bottom plate 23 is inserted in the opening to close the opening, and the first cavity 201 is defined by the inner wall of the housing 21, the bottom plate 23, and the partition plate 22. As shown in fig. 6, the second connecting passage 233 is located in the bottom plate 23, and one end of the second connecting passage 233 communicates with the other end of the first connecting passage 22E near the opening. The other end of the second connection path 233 is located in the first cavity 201, and the bottom plate 23 is used to abut against the SiC device 4 to absorb heat of the SiC device 4.
More preferably, the second connection channels 233 are uniformly distributed on the bottom plate 23 in a direction perpendicular to the extending direction of the second connection channels 233 as shown in fig. 10, so that the refrigerant 5 in the second connection channels 233 can be brought closer to the SiC device 4 to absorb and release heat to the SiC device 4 better.
Based on the above, in order to allow the gas of the coolant to enter the second chamber 202 from the first chamber 201 along the first passage 203 in the N2 direction as shown in fig. 7. The first passage 203 includes a first air passage 22A, a second air passage 22B, and a third air passage 22C as shown in fig. 8. As shown in fig. 8 and 14, two ends of the first air passage 22A are respectively communicated with the first cavity 201 and the second cavity 202, and the first air passage 22A is positioned on one end of the partition 22 away from the opening. One end of the second air passage 22B communicates with the first air passage 22A, and a distance H1 between the axis of the second air passage 22B and the axis of the first air passage 22A gradually decreases in a direction approaching the second chamber 202. One end of the third air passage 22C communicates with the first air passage 22A, and a distance H3 between the axis of the third air passage 22C and the axis of the first air passage 22A gradually decreases in a direction approaching the second chamber 202. The other end of the third air passage 22C communicates with the other end of the second air passage 22B. The second air passage 22B and the third air passage 22C are alternately arranged on opposite sides of the first air passage 22A in sequence along the axis of the first air passage 22A.
Specifically, when the gas of the coolant moves from the inside of the first chamber 201 toward the second chamber 202 in the N2 direction as shown in fig. 7, since the distance H1 between the axis of the second air passage 22B and the axis of the first air passage 22A gradually increases in the direction away from the second chamber 202 as shown in fig. 8, and the distance H2 between the axis of the third air passage 22C and the axis of the first air passage 22A also gradually increases in the direction away from the second chamber 202. The gas of the coolant is not easy to enter the second air passage 22B and the third air passage 22C when moving along the first air passage 22A in the direction approaching the cavity, so that the gas of the coolant directly enters the second cavity 202 from the first air passage 22A in the direction of N1.
As the gas of the coolant moves from the second chamber 202 toward the first chamber 201 in the direction N4 as shown in fig. 9, the distance H1 between the axis of the second air passage 22B and the axis of the first air passage 22A gradually increases in the direction away from the second chamber 202. The coolant gas more easily enters the second air passage 22B from the end of the second air passage 22B near the second cavity 202 in the direction of N5, and returns from the other end of the third air passage 22C far from the second cavity 202 into the first air passage 22A in the direction of N5, and is caused to flow counter to the coolant gas that originally flowed in the first air passage 22A in the direction away from the cavity. Thereby slowing down the flow rate of the coolant gas in the first gas passage 22A. So that the coolant gas will move more slowly from the second chamber 202 in a direction closer to the first chamber 201.
When the gas of the coolant moves from the second cavity 202 to the first cavity 201 along the direction N4, the first channel of the heat dissipation package structure of the SiC device is at the second station.
In this way, when SiC device 4 is operated in a hotter environment, the coolant gas may more easily pass from within first cavity 201 along first gas path 22A in the direction N1 into second cavity 202. While the gas of the coolant in the second chamber 202 is not easily introduced from the second chamber 202 into the first chamber 201 through the first gas passage 22A in the N4 direction. So that the gas of the coolant can stay better inside the second chamber 202 to be liquefied by the heat absorbing member 3 to absorb heat.
More preferably, the first air passage 22A includes four sub-air passages as shown in fig. 8 and 9. The four sub-air passages are sequentially communicated and are respectively in one-to-one correspondence with the second air passage 22B and the third air passage 22C, one end of the second air passage 22B is communicated with the sub-air passage, the distance H1 between the axis of the second air passage 22B and the axis of the sub-air passage is gradually reduced along the direction close to the second cavity 202, one end of the third air passage 22C, which is far away from the second air passage 22B, is communicated with the sub-air passage, the distance H2 between the axis of the third air passage 22C and the axis of the sub-air passage is gradually reduced along the direction close to the second cavity 202, and the sub-air passage, the second air passage 22B and the third air passage 22C encircle to form a loop, and the second air passage 22B and the adjacent sub-air passages are coaxial along the direction close to the second cavity 202.
Thus, when the gas of the coolant moves from the second chamber 202 in the direction of N4 to the first chamber 201 as shown in fig. 9, the split flow is more easily generated so that the gas of the coolant moves in both the direction of N4 and the direction of N5, thereby more easily generating convection at the junction of the third air passage 22C and the sub-passage, and further reducing the moving speed of the gas of the coolant when moving from the second chamber 202 to the direction of the first chamber 201. So that the gas of the coolant can stay better inside the second chamber 202 to be liquefied by the heat absorbing member 3 to absorb heat.
It should be noted that the processing of the sub-air passage, the second air passage 22B, and the third air passage 22C is convenient. The partition 22 may be composed of a baffle 221 and a cover plate 222 as shown in fig. 18, wherein a processing groove corresponding to the first air passage 22A, the second air passage 22B and the third air passage 22C is formed on the baffle 221, a first preset bonding pad 22D may be placed in the middle of the surrounding of the processing groove corresponding to the sub-air passage, the second air passage 22B and the third air passage 22C, the first preset bonding pad may be a gold-tin mixture, the ratio of gold to tin may be between 1:1 and 3:1, the content of gold is typically between 10% and 30%, and the thickness of the first preset bonding pad is typically between 0.025mm and 0.1 mm. The remaining non-processed slots should also be placed with the pre-solder of the same material as the first pre-pad to facilitate soldering of the shield 221 and the cover 222.
Based on the above, in order to allow the liquid of the coolant to enter the first chamber 201 from the second chamber 202 along the second passage 204 in the N3 direction as shown in fig. 10. The second connection path 233 includes a first fluid path 23A, a second fluid path 23B, and a third fluid path 23C as shown in fig. 11. The first fluid channel 23A is located within the bottom plate 23 as shown in fig. 17, and the first fluid channel 23A has a first end 23E and a second end 23F as shown in fig. 10. The first end 23E communicates with the other end of the first connection passage 22E as shown in fig. 6 and 15. The second end 23F communicates with the first cavity 201 and is located in the middle of the bottom plate 23, and the first end 23E and the second end 23F are located on the side of the bottom plate 23 facing the opening. As shown in fig. 11, one end of the second liquid passage 23B communicates with the middle portion of the first liquid passage 23A, and the distance H4 between the axis of the second liquid passage 23B and the axis of the first liquid passage 23A gradually decreases in a direction approaching the first chamber 201. One end of the third liquid passage 23C communicates with the middle portion of the first liquid passage 23A, and a distance H3 between the axis of the third liquid passage 23C and the axis of the first liquid passage 23A gradually decreases in a direction approaching the first chamber 201. The other end of the third liquid passage 23C communicates with the other end of the second liquid passage 23B. The second liquid passages 23B and the third liquid passages 23C are alternately arranged in order along the axis of the first liquid passage 23A on opposite sides of the first liquid passage 23A. In this way, the volume of the coolant liquid in the bottom plate 23 is increased, so that the heat of the SiC device 4 can be absorbed well.
Specifically, when the liquid of the coolant moves from inside the second chamber 202 toward the first chamber 201 in the N3 direction as shown in fig. 10, since the distance H4 between the axis of the second liquid passage 23B and the axis of the first liquid passage 23A gradually increases in the direction away from the second end 23F as shown in fig. 11, and the distance H3 between the axis of the third liquid passage 23C and the axis of the first liquid passage 23A also gradually increases in the direction away from the second end 23F. The liquid of the coolant is not likely to enter the second liquid passage 23B and the third liquid passage 23C when moving in the direction approaching the cavity along the first liquid passage 23A, so that the liquid of the coolant directly enters the first cavity 201 from the first liquid passage 23A in the direction N3.
As the liquid of the coolant moves from the second chamber 202 toward the first chamber 201 in the direction N6 as shown in fig. 12, since the distance H4 between the axis of the second liquid passage 23B and the axis of the first liquid passage 23A gradually increases in the direction away from the second end 23F. The liquid of the coolant more easily enters the second liquid passage 23B from the end of the second liquid passage 23B near the second end 23F in the direction of N7, and returns into the first liquid passage 23A from the other end of the third liquid passage 23C far from the second end 23F in the direction of N7, and convection is generated with the liquid of the coolant that originally flows in the first liquid passage 23A in the direction away from the cavity. Thereby slowing down the flow rate of the liquid of the coolant in the first liquid passage 23A. So that the liquid of the coolant will move more slowly from the second end 23F in a direction towards the first end 23E.
When the liquid of the coolant moves from the second cavity 202 to the first cavity 201 along the direction N6, the second channel of the heat dissipation package structure of the SiC device is at the second station.
More preferably, the first fluid channel 23A comprises several sub-fluid channels as shown in fig. 11 and 12. The plurality of sub-liquid channels are sequentially communicated and respectively correspond to the second liquid channel 23B and the third liquid channel 23C one by one, one end of the second liquid channel 23B is communicated with the sub-liquid channel, the distance H4 between the axis of the second liquid channel 23B and the axis of the sub-liquid channel is gradually reduced along the direction close to the second end 23F, one end of the third liquid channel 23C far away from the second liquid channel 23B is communicated with the sub-liquid channel, the distance H3 between the axis of the third liquid channel 23C and the axis of the sub-liquid channel is gradually reduced along the direction close to the second end 23F, and the sub-liquid channel, the second liquid channel 23B and the third liquid channel 23C are surrounded to form a loop, and the second liquid channel 23B and the adjacent sub-liquid channels are coaxial along the direction close to the second end 23F.
Thus, when the SiC device 4 is operated in a hotter environment, the liquid of the coolant enters the first cavity 201 from the second channel 204 along N3, absorbs heat from the SiC device 4 in the first, second and third liquid channels 23A, 23B and 23C to evaporate, and more easily leaves the second liquid channel 23B from the second end 23F, and is less likely to return into the second cavity 202 along the N6 direction, thereby reducing the rate of liquid of the coolant supplied from the second cavity 202 into the first cavity 201, thereby affecting the cooling of the SiC device 4.
The secondary liquid channel, the secondary liquid channel 23B, and the tertiary liquid channel 23C are provided for the convenience of processing. The bottom plate 23 may be composed of a first mounting plate 231 and a second mounting plate 232 as shown in fig. 17, wherein the second mounting plate 232 is provided with processing grooves corresponding to the first liquid channel 23A, the second liquid channel 23B and the third liquid channel 23C, wherein a second preset bonding pad 23D may be placed in the middle of the surrounding processing grooves corresponding to the sub-liquid channel, the second liquid channel 23B and the third liquid channel 23C, the second preset bonding pad may be a gold-tin mixture, the ratio of gold to tin may be between 1:1 and 3:1, the content of gold is typically between 10% and 30%, and the thickness of the first preset bonding pad is typically between 0.025mm and 0.1 mm. The remaining non-processing grooves should also be placed on the preset solder material consistent with the first preset solder pad material to facilitate the soldering of the baffle 221 and the cover plate 222, and the first mounting plate 231 should be pre-processed with the through holes of the first end 23E and the second end 23F corresponding to the first liquid channel 23A. After the above-described welding of the first mounting plate 231 and the second mounting plate 232 is completed, the second mounting plate 232 should be positioned outside the housing 21 for abutment with the SiC device 4.
Based on the above-described basis. A heat dissipation package structure for SiC device 4 as shown in fig. 13 further includes a thermistor 24. The outer side of the shell 21 away from the opening is provided with a groove 211 corresponding to the thermistor 24, and the thermistor 24 is arranged in the groove 211 and is electrically connected with the temperature control circuit through the assembly module 1. Note that the thermistor 24 may be a NTC (Negative Temperature CoeffiCient) thermistor 24. Which is inversely related to the temperature value, i.e. the resistance of the thermistor 24 decreases when the temperature increases and the resistance of the thermistor 5 increases when the temperature decreases. While the temperature control circuit may be an ADN8834 ultra compact 1.5A thermoelectric cooler TEC (Thermoelectric Cooler) controller manufactured by adenuo investment limited (ADI). The temperature control circuit may include a linear power stage, a pulse width modulation PWM (Pulse Width Modulation) power stage, and two zero drift, rail-to-rail operational amplifiers. The linear controller operates with a PWM (Pulse Width Modulatio) driver to control the internal power mosfet MOSFET (Metal Oxide Semiconductor Field Effect Transistor) in an H-bridge configuration. The ADN8834 drives the current through TEC (Negative Temperature Coefficient Thermistor) to establish the temperature of the laser diode or passive component connected to the TEC module to a programmable target temperature by measuring the thermal sensor feedback voltage and using an integrated op-amp as a Proportional-Integral-Derivative (PID) compensator to condition the signal. ADN8834 supports a Negative Temperature Coefficient (NTC) thermistor 24 and a positive temperature coefficient PTC (Positive Temperature Coefficient Thermistor) resistor temperature detector RTD (Resistance Temperature Detector). The target temperature is set to the Analog voltage input of a Digital-to-Analog Converter DAC (Digital-to-Analog Converter) or an external resistor divider. The ADN8834 temperature control loop realizes stability by using a built-in zero drift chopper amplifier through a PID compensation mode. The internal 2.50V reference voltage provides a precise 1% output for the thermistor 24 temperature sensing bridge and voltage divider network bias to program the maximum TEC current and voltage limits in both heating and cooling modes. The zero drift chopper amplifier can maintain excellent long-term temperature stability through an automatic analog temperature control loop.
Thus, the external temperature control circuit can regulate and control the current of the heat absorbing member 3 according to the measurement data of the thermistor 24, and can control the heat absorbing efficiency and the heat releasing at the same time.
Based on the above-described basis. The partition 22 has a guide surface 223 on the side thereof located in the first chamber 201 as shown in fig. 4.
Based on the above-described basis. The mounting module 1 shown in fig. 19 includes a housing 11, a base 12, a first pin 13, and a second pin 14. The housing 11 is mounted on the side of the shell 21 adjacent to the opening. The accommodating chamber 101 is defined by the housing 11 and a side surface of the bottom plate 23 away from the housing 21. The susceptor 12 is mounted on the inner side of the housing 11 away from the case 21, and is provided with a placement groove 121 for placing the SiC device 4. The first pin 13 is mounted on the housing 11, and one end of the first pin 13 is located in the accommodating chamber 101 and is electrically connected to the SiC device 4. The other end of the first pin 13 is located outside the housing 21 and is used for electrical connection with an external circuit. The middle part of the second pin 14 is mounted on the housing 11, and one end of the second pin 14 is located outside the housing 11 and is used for electrical connection with the thermistor 24 and the heat absorbing member 3. The other end of the second pin 14 is located outside the housing 11 and is used for electrical connection with a temperature control circuit.
Based on the above, in order to electrically connect the circuit board 15 with the thermistor 24 and the heat absorbing member 3. The mounting module 1 as shown in fig. 2 further comprises a circuit board 15. The circuit board 15 is mounted on the outside of the housing 21 remote from the opening. One end of the second pin 14 is mounted on the circuit board 15, and the thermistor 24 is mounted on the circuit board 15 and electrically connected to the second pin 14 through the circuit board 15. The heat absorbing member 3 is electrically connected to the circuit board 15 and is electrically connected to the second pins 14 through the circuit board 15.
Note that the circuit board 15 (Printed Circuit Board) is a base material for supporting and connecting electronic components. It is usually made of a piece of insulating material such as glass fiber reinforced plastic (FR-4 (FR stands for "Fire suppressing", 4 stands for class of material)), covered with a copper foil, and subjected to a process such as chemical etching or machining to form a conductive pattern for connecting various electronic components.
Based on the above, in order to enable the SiC device 4 to be electrically connected to the first pin 13. A heat dissipation package structure for SiC device 4 as shown in fig. 20 further includes a connector 16. The SiC device 4 is electrically connected to the first pin 13 via a connection 16. It should be noted that the connection piece 16 is a gold wire of 25um to 50 um.
The packaging method of the heat dissipation packaging structure of the SiC device 4 includes the following step S1, mounting the base 12 on the inner wall of the housing 11 far from the case 21 through a eutectic process or a high heat conduction silver adhesive process. And a placement groove 121 is opened on the susceptor 12, and the SiC device 4 is placed in the placement groove 121. And S2, respectively mounting two ends of the connecting piece 16 on the first pin 13 and the SiC device 4 through a gold wire bonding process. So that the first pins 13 are in one-to-one communication with the electrodes of the SiC device 4, and the SiC device 4 is coated with thermally conductive silicone grease. S3, coolant is dropped into the case 21 through the mounting hole 212. And the middle part of the heat absorbing member 3 is adhered to the inside of the mounting hole 212 through polyurethane or epoxy resin such that one end of the heat absorbing member 3 is positioned in the second cavity 202 and the other end of the heat absorbing member 3 is positioned outside the housing 21, and the mounting hole 212 is closed. And S4, welding the thermistor 24 on the circuit board 15 by soldering, and coating heat-conducting silicone grease on the surface of the thermistor 24. S5, the circuit board 15 is adhered to the side of the housing 21 away from the opening by a high heat conduction silver adhesive process, and the thermistor 24 is inserted into the groove 211. The pads of the heat absorbing member 3 are soldered to the circuit board 15 by soldering. And S6, bonding the shell 11 to the shell 21 through acrylic, polyurethane or epoxy resin. So that the bottom plate 23 and the inner wall of the housing 11 enclose a containing cavity 101, and the bottom plate 23 abuts against the SiC device 4 to complete the packaging of the SiC device 4.
As can be seen from the above description, the heat dissipation packaging structure of the SiC device 4 provided in this embodiment can circulate the cooling liquid in the first cavity 201 and the second cavity 202 without a driving member, thereby rapidly reducing the temperature of the first cavity 201 and further improving the heat dissipation capability of the SiC device 4.
The above description is merely an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present invention, and it is intended to cover the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A SiC device heat dissipation package structure, comprising:
the assembly module is used for placing the SiC device and communicating the SiC device with an external circuit;
the heat transfer assembly is provided with a first cavity and a second cavity for placing a refrigerant, is close to the outer wall of the first cavity and is used for being abutted against the SiC device, and is surrounded with the assembly module to form a containing cavity for placing the SiC device;
one end of the heat absorbing member is positioned in the second cavity and is used for absorbing heat of coolant steam in the second cavity so as to liquefy the coolant in the second cavity, the other end of the heat absorbing member is positioned outside the heat transfer assembly and is used for releasing heat to the outside, the heat transfer assembly is internally provided with a first channel and a second channel, the steam of the coolant in the first cavity enters the second cavity from the first channel, the coolant in the second cavity enters the first cavity from the second channel, and the heat absorbing member is electrically connected with a temperature control circuit through the assembly module;
The second channel should be located between the first channel and the SiC device, and the second cavity bottom surface should have a distance to the first cavity bottom surface such that the distance H 'from the liquid surface of the coolant in the second cavity to the bottom of the first cavity and the distance H from the liquid surface of the coolant in the first cavity to the bottom of the first cavity satisfy H' > H.
2. The SiC device heat dissipation package of claim 1, wherein the heat transfer assembly comprises:
one side of the shell is provided with an opening communicated with the inside of the shell;
the heat absorbing device comprises a shell, a baffle, a first channel, a second channel and a heat absorbing member, wherein one end of the baffle is arranged on the inner wall of the shell far away from the opening, the other end of the baffle is arranged on the inner peripheral side of the shell, the second cavity is formed by enclosing the baffle and the shell, the shell is provided with a mounting hole communicated with the second cavity, the middle part of the heat absorbing member is inserted into the mounting hole, one end of the heat absorbing member is positioned in the second cavity and is used for absorbing heat in the second cavity, the other end of the heat absorbing member is positioned outside the shell and is used for releasing heat to the outside, the baffle is provided with the first channel, the first channel is far away from the opening, the second channel is formed by a first connecting channel and a second connecting channel which are mutually communicated, the first connecting channel is positioned on one end of the baffle close to the opening, and one end of the first connecting channel is positioned in the second cavity;
The bottom plate is inserted in the opening to close the opening, the first cavity is formed by the inner wall of the shell, the bottom plate and the partition board in a surrounding mode, the second connecting channel is located in the bottom plate, one end of the second connecting channel is communicated with the other end, close to the opening, of the first connecting channel, the other end of the second connecting channel is located in the first cavity, and the bottom plate is used for being abutted to the SiC device to absorb heat of the SiC device.
3. The SiC device heat dissipation package of claim 2, wherein the first channel comprises:
the two ends of the first air channel are respectively communicated with the first cavity and the second cavity, and the first air channel is positioned at one end of the partition board far away from the opening;
the second air passage is communicated with the first air passage at one end, and the distance between the axis of the second air passage and the axis of the first air passage is gradually reduced along the direction approaching to the second cavity;
and one end of the third air passage is communicated with the first air passage, the distance between the axis of the third air passage and the axis of the first air passage gradually decreases along the direction close to the second cavity, the other end of the third air passage is communicated with the other end of the second air passage, and the second air passage and the third air passage are sequentially and alternately distributed on two opposite sides of the first air passage along the axis of the first air passage.
4. A SiC device heat dissipation package as defined in claim 3, wherein the second connecting trace comprises:
a first fluid channel positioned in the bottom plate, the first fluid channel having a first end and a second end, the first end being in communication with the other end of the first connecting channel, the second end being in communication with the first cavity and positioned in the middle of the bottom plate, the first end and the second end both being positioned on a side of the bottom plate facing the opening;
the second liquid channel is communicated with the middle part of the first liquid channel at one end, and the distance between the axis of the second liquid channel and the axis of the first liquid channel is gradually reduced along the direction approaching to the first cavity;
one end of the third liquid channel is communicated with the middle part of the first liquid channel, the distance between the axis of the third liquid channel and the axis of the first liquid channel is gradually reduced along the direction close to the first cavity, the other end of the third liquid channel is communicated with the other end of the second liquid channel, and the second liquid channel and the third liquid channel are sequentially and alternately distributed on two opposite sides of the first liquid channel along the axis of the first liquid channel.
5. The SiC device heat dissipation package of claim 4, further comprising:
the thermistor is arranged in the groove and is electrically connected with the temperature control circuit through the assembly module.
6. The SiC device heat dissipation package of claim 5, wherein a side of the spacer within the first cavity has a guide surface.
7. The SiC device heat dissipation package of claim 6, wherein the assembly module comprises:
the shell is arranged on the side surface of the shell, which is close to the opening, and the accommodating cavity is formed by enclosing the shell and the side surface of the bottom plate, which is far away from the shell;
a base which is installed on the inner side of the outer shell far away from the shell and is provided with a placing groove for placing the SiC device;
the first pin is arranged on the shell, one end of the first pin is positioned in the accommodating cavity and is electrically connected with the SiC device, and the other end of the first pin is positioned outside the shell and is used for being electrically connected with an external circuit;
The middle part is installed on the shell, one end of the second pin is located outside the shell and is used for being electrically connected with the thermistor and the heat absorbing piece, and the other end of the second pin is located outside the shell and is used for being electrically connected with the temperature control circuit.
8. The SiC device heat dissipation package of claim 7, wherein the assembly module further comprises:
the circuit board is installed on the outside of keeping away from of casing the opening, the one end of second pin is installed on the circuit board, thermistor installs on the circuit board and through the circuit board with second pin electricity is connected, the heat absorbing piece with the circuit board electricity is connected, and through the circuit board with second pin electricity is connected.
9. The SiC device heat dissipation package of claim 8, further comprising:
and the SiC device is electrically connected with the first pin piece through the connecting piece.
10. A packaging method based on the SiC device heat dissipation packaging structure of claim 9, comprising the steps of:
s1, mounting the base on the inner wall of the shell far away from the shell through a eutectic process or a high-heat-conductivity silver adhesive bonding process, arranging the placing groove on the base, and placing the SiC device in the placing groove;
S2, respectively mounting two ends of the connecting piece on the first pin and the SiC device through a gold wire bonding process so that the first pin is communicated with electrodes of the SiC device one by one, and smearing heat-conducting silicone grease on the SiC device;
s3, dropwise adding a coolant into the shell through the mounting hole, and bonding the middle part of the heat absorbing piece into the mounting hole through polyurethane or epoxy resin, so that one end of the heat absorbing piece is positioned in the second cavity, the other end of the heat absorbing piece is positioned outside the shell, and the mounting hole is closed;
s4, welding the thermistor on the circuit board through soldering, and coating heat-conducting silicone grease on the surface of the thermistor;
s5, bonding the circuit board on one side of the shell far away from the opening through a high-heat-conductivity silver adhesive bonding process, enabling the thermistor to be inserted into the groove, and welding a bonding pad of the heat absorbing piece on the circuit board through soldering;
and S6, bonding the shell on the shell through acrylic ester, polyurethane or epoxy resin, so that the bottom plate and the inner wall of the shell enclose to form the accommodating cavity, and the bottom plate is abutted with the SiC device to complete packaging of the SiC device.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| JP4122250B2 (en) * | 2003-03-31 | 2008-07-23 | 山洋電気株式会社 | Electronic component cooling system |
| TWI272056B (en) * | 2005-08-12 | 2007-01-21 | Foxconn Tech Co Ltd | Integrated liquid cooling system |
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