CN117289008B - 150kV tunneling giant magneto-resistance direct current sensor - Google Patents
150kV tunneling giant magneto-resistance direct current sensor Download PDFInfo
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- CN117289008B CN117289008B CN202311586411.9A CN202311586411A CN117289008B CN 117289008 B CN117289008 B CN 117289008B CN 202311586411 A CN202311586411 A CN 202311586411A CN 117289008 B CN117289008 B CN 117289008B
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- 230000005641 tunneling Effects 0.000 title claims abstract description 32
- 230000006698 induction Effects 0.000 claims abstract description 75
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 46
- 238000013016 damping Methods 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000003475 lamination Methods 0.000 claims description 53
- 239000004020 conductor Substances 0.000 claims description 20
- 239000003381 stabilizer Substances 0.000 claims description 15
- 230000008054 signal transmission Effects 0.000 claims description 10
- 230000000087 stabilizing effect Effects 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims 1
- 230000005426 magnetic field effect Effects 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/16—Magnets
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
The invention discloses a 150kV tunneling giant magneto-resistance direct current sensor, which relates to the technical field of sensors and comprises an opening magnetic focusing ring, wherein a first half-angle gear and a second half-angle gear rotate around a magnetic gear under the cooperation of a bearing rotor, a magnetic gear, a first insulating metal short rod and a second insulating metal short rod, and synchronously drive a first superconducting magnetic sheet and a second superconducting magnetic sheet to perform circular track operation, so that a first magnetic induction reinforcing component rotates outside the opening magnetic focusing ring, a second magnetic induction reinforcing component rotates inside the opening magnetic focusing ring, the normal operation of a feedback damping coil is not interfered, the first magnetic induction reinforcing component and the second magnetic induction reinforcing component form an internal magnetic field effect and an external magnetic field effect, generated electrons are guided, the interference of an external magnetic field on a measuring system is reduced, the stability of the system is improved, the high impedance of the whole system is ensured, and the measurement accuracy of weak electron flow bundles is improved.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a 150kV tunneling giant magneto-resistance direct current sensor.
Background
The giant magneto-resistance current sensor has the advantage of wide measuring range, but the measuring range is mainly concentrated in medium and small currents, compared with a current transformer, the giant magneto-resistance current sensor has the disadvantage that the capability of measuring large currents is insufficient in a power system, the measuring range of the sensor needs to be further improved, the measuring range of the sensor can be improved by the methods of increasing the width of an air gap of a magnetic ring, canceling the magnetic ring, increasing the distance between the sensor and the current to be measured, and the like, but the capability of resisting the interference of an external magnetic field of the sensor is reduced, and the sensor is sensitive to the relative position between the sensor and the current to be measured, and the like.
In the prior art, as in chinese patent application with CN106018939a "a large-range transient current sensor based on tunneling magneto-resistance", an open magnetic ring is disclosed, and a tunneling magneto-resistance sensing chip disposed at the opening is used to measure the current in a current-carrying wire passing through the center of the open magnetic ring, and meanwhile, a damping coil wound on the open magnetic ring is used to form an induction magnetic field intersecting with the magnetic line generated by the measured current, so that when the high-frequency impact current arrives, the air gap magnetic field can be effectively weakened, and the purpose of expanding the range is achieved.
However, in the prior art, when the 150kV tunneling giant magneto-resistance direct current sensor is in use, the range of the material resistance along with the magnetic field change in the giant magneto-resistance effect is small, the sensitivity is low, the measurement precision for weak current is low, the effect is poor, the sensor cannot be applied to complex environments, and the requirement of higher precision cannot be met, so that a new 150kV tunneling giant magneto-resistance direct current sensor needs to be provided.
Disclosure of Invention
The invention aims to provide a 150kV tunneling giant magnetoresistance direct current sensor, which aims to solve the problems that the range of the material resistance along with the magnetic field change in the giant magnetoresistance effect is smaller, the sensitivity is low, the weak current measurement precision is low, the effect is poor, the sensor cannot be applied to complex environments, and the requirement of higher precision cannot be met in the background technology.
In order to achieve the above purpose, the present invention provides the following technical solutions: the utility model provides a kV tunnel giant magnetoresistance direct current sensor, includes opening magnetic ring that gathers, opening magnetic ring metal material constitutes has the annular structure of air gap, opening magnetic ring that gathers's inside is passed two electric current wire that flow direction is opposite, opening magnetic ring's left side end outside is wound there is feedback damping coil, feedback damping coil's both ends electricity is connected with signal transmission circuit, signal transmission circuit's output is feedback damping coil and supplies power, feedback damping coil's the other end electricity is connected with earth resistance, the voltage at earth resistance both ends is the output, just the front and back end outside week side of electric current wire all overlaps to be established and is installed two sets of rotation lantern rings, two sets of rotation lantern ring's inboard ring rail limit side surface all is fastened and is connected with two sets of magnetic induction enhancement structures, two sets of magnetic induction enhancement structures include a set of first magnetic induction enhancement subassembly and a set of second magnetic induction enhancement subassembly, just first magnetic induction enhancement subassembly is located opening magnetic ring's outside, second magnetic induction enhancement subassembly is located opening magnetic ring's inside;
the second magnetic induction reinforcing component comprises a bearing rotor, a braking ring is arranged on the surface of the back side end of the bearing rotor, a magnetic gear is arranged outside the bearing rotor, the tooth angle ends of the left side and the right side of the outer portion of the magnetic gear are connected with a first half angle gear and a second half angle gear in a meshed mode, a first insulating metal short rod and a second insulating metal short rod are respectively arranged in the first half angle gear and the second half angle gear, a first half ring piece and a second half ring piece are integrally formed on the outer edge of the first half angle gear and the outer edge of the second half angle gear respectively, and a first superconducting magnetic sheet and a second superconducting magnetic sheet are fixedly connected to the outer edge side of the first half ring piece and the outer edge side of the second half ring piece.
Preferably, a magnetoresistive sensor chip and a TMR sensor chip are respectively arranged in the air gap of the opening magnetic focusing ring up and down, the magnetoresistive sensor chip and the TMR sensor chip are respectively electrically connected with a first current-carrying conductor and a second current-carrying conductor through a signal transmission circuit, the first current-carrying conductor and the second current-carrying conductor are electrically connected with a power supply through the signal transmission circuit, the power supply is electrically connected with a voltage stabilizer through output current, and the voltage stabilizer is respectively connected with a resistor R through a resistor R 2 And resistance R 3 The first voltage stabilizing circuit and the second voltage stabilizing circuit are electrically connected.
Preferably, the output end of the magneto-resistance sensor chip is connected with a filter through a wire, and the output end of the TMR sensor chip is connected with an operational amplifier through a wire.
Preferably, the filter and the operational amplifier pass through a resistor R 1 The first triode and the second triode are respectively and electrically connected.
Preferably, the first triode and the second triode are connected in series with the voltage stabilizer, and the surfaces of the filter and the operational amplifier are connected with an ECU through wires.
Preferably, the shielding sleeve is arranged on the outer part of the opening magnetic focusing ring, the sealing sleeve ring fastening ends are arranged at the left end and the right end of the shielding sleeve, and the base is fixedly connected to the bottom of the shielding sleeve.
Preferably, the left end and the right end of the base are fixedly provided with connecting sheet plates, and mounting screws are embedded and fastened in the connecting sheet plates.
Preferably, the side wall surface of the base is provided with a connecting terminal, four groups of terminals are arranged in the connecting terminal, and each group of terminals comprises a high-voltage terminal, a signal output end and a signal input end.
Preferably, the outside of the opening magnetic focusing ring comprises a plurality of lamination sheets, an upper lamination sheet and a lower lamination sheet of the plurality of lamination sheets are respectively a first long lamination sheet and a second long lamination sheet, and a first short lamination sheet and a second short lamination sheet are respectively arranged between the first long lamination sheet and the second long lamination sheet.
Preferably, the first short lamination and the second short lamination are arranged on two sides of the first long lamination and the second long lamination, and hollow sections are formed by stacking the inner parts of the first short lamination and the second short lamination.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, under the cooperation of the first magnetic induction reinforcing component and the second magnetic induction reinforcing component, three rotors in the bearing rotor are enabled to form torque force under the interaction of the magnetic gear and the magnetic field under the condition that the number of magnetic pole pairs of each rotor are different, the bearing rotor can further drive the magnetic gear to rotate, the first half-angle gear and the second half-angle gear at two sides are enabled to rotate around the magnetic gear under the cooperation of the first insulating metal short rod and the second insulating metal short rod by utilizing the rotatability of the magnetic gear, the first superconducting magnetic sheet and the second superconducting magnetic sheet are driven to rotate around the magnetic gear on the surface of the rotating collar, the first magnetic induction reinforcing component and the second magnetic induction reinforcing component are driven to rotate outside the opening magnetic ring in the same structure, the second magnetic induction reinforcing component rotates inside the opening magnetic ring without interfering with the normal operation of the feedback damping coil, the first magnetic induction reinforcing component and the second magnetic induction reinforcing component form internal and external magnetic field effects, generated electrons are guided to reduce the interference to the outside and the stability of the measuring system is improved.
2. According to the invention, scattered electrons are blocked in the rotation process of the first superconducting magnetic sheet and the second superconducting magnetic sheet, the number of electrons passing through the magnetic layer is reduced, the high impedance of the whole system is ensured, the measurement accuracy of weak electron beams is improved, the first magnetic induction reinforcing component or the second magnetic induction reinforcing component can stop rotating under the control action of the braking ring respectively, the second magnetic induction reinforcing component rotates independently in the opening magnetic gathering ring, or the first magnetic induction reinforcing component rotates independently outside the opening magnetic gathering ring, and the number of electrons passing through the magnetic layer is increased, so that the whole system presents low impedance.
3. According to the invention, the air rotational flow is formed in the shielding shell under the rotation fit of the first superconducting magnetic sheet and the second superconducting magnetic sheet, so that the heat accumulation of the feedback damping coil and the opening magnetic accumulation ring is reduced, and the overall operation of the system is further ensured.
4. According to the invention, the sensitivity of the integral direct current sensor is increased by matching the magnetoresistive sensor chip and the TMR sensor chip which are arranged in the opening air gap of the opening magnetic focusing ring, so that the detection of smaller current is realized, and the output voltages of the first current carrying conductor, the second current carrying conductor and the power supply are stabilized by matching the voltage stabilizer, so that the output voltage of 150kV is controlled in a fixed range, and the stable use of the integral system circuit is ensured.
Drawings
FIG. 1 is a schematic diagram of a 150kV tunneling giant magneto-resistance DC sensor in front view;
FIG. 2 is a schematic diagram of a front view of a 150kV tunneling giant magneto-resistance DC sensor according to the present invention;
FIG. 3 is a schematic diagram of a portion of a 150kV tunneling giant magnetoresistive DC sensor according to the present invention;
FIG. 4 is a schematic diagram of a connection circuit in a 150kV tunneling giant magneto-resistive DC sensor according to the present invention;
FIG. 5 is a schematic diagram showing circuit connection between a magnetoresistive sensor chip and a TMR sensor chip in a 150kV tunneling giant magnetoresistive DC sensor according to the present invention;
FIG. 6 is a schematic diagram of a portion of a center lamination of a 150kV tunneling giant magnetoresistive DC sensor according to the present invention;
FIG. 7 is a schematic diagram of a second magnetic induction enhancement component of a 150kV tunneling giant magnetoresistive DC sensor according to the present invention;
FIG. 8 is a schematic top view of a second magnetic induction enhancement component and a first magnetic induction enhancement component of a 150kV tunneling giant magnetoresistive DC sensor according to the present invention;
FIG. 9 is a schematic diagram of a second magnetic induction enhancement component of a 150kV tunneling giant magnetoresistive DC sensor according to the present invention;
FIG. 10 is a schematic diagram showing a separation structure of a first magnetic induction enhancement component and an open magnetic focusing ring in a 150kV tunneling giant magneto-resistive DC sensor according to the present invention;
FIG. 11 is a schematic bottom view of a second magnetic induction enhancement component and a first magnetic induction enhancement component of a 150kV tunneling giant magnetoresistive DC sensor according to the present invention;
fig. 12 is a schematic diagram of a structure of a 150kV tunneling giant magnetoresistive dc sensor according to the present invention, in which a second magnetic induction enhancing component and a first magnetic induction enhancing component are connected and separated.
In the figure: 1. an opening magnetic ring; 2. a feedback damping coil; 3. a current lead; 4. rotating the collar; 5. a second magnetic induction enhancing component; 51. a bearing rotor; 52. a magnetic gear; 53. a first half angle gear; 54. a first insulating metal stub; 55. a first half ring; 56. a first superconducting magnetic sheet; 57. a second insulating metal stub; 58. a second half angle gear; 59. a second half ring member; 591. a second superconducting magnetic sheet; 6. a magnetoresistive sensor chip; 7. TMR sensor chip; 8. an operational amplifier; 9. a first triode; 10. a second triode; 11. a voltage stabilizer; 12. a first current carrying conductor; 13. a second current carrying conductor; 14. a power supply; 15. a first voltage stabilizing circuit; 16. a second voltage stabilizing circuit; 17. a ground resistor; 18. a filter; 19. an ECU; 20. a shielding sleeve; 21. a sealing collar securing end; 22. a base; 23. a connecting sheet plate; 24. installing a screw; 25. a connection terminal; 26. a terminal; 27. a first long lamination; 28. a first short lamination; 29. a hollow section; 30. a second short lamination; 31. a second long lamination.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiment one: referring to fig. 1-12, there is shown: the utility model provides a 150kV tunnel giant magnetoresistance direct current sensor, including opening magnetic ring 1, opening magnetic ring 1 metal material constitutes has the cyclic annular structure of air gap, opening magnetic ring 1's inside is passed two electric current wire 3 that the electric current flow direction is opposite, opening magnetic ring 1's left side end outside is wound and is had feedback damping coil 2, feedback damping coil 2's both ends electricity is connected with signal transmission circuit, signal transmission circuit's output is for feeding back damping coil 2, feedback damping coil 2's the other end electricity is connected with ground resistance 17, the voltage at ground resistance 17 both ends is the output, and the outside week side of electric current wire 3's front and back end all overlaps and is installed two sets of rotation lantern rings 4, two sets of magnetic induction enhancement structures are all firmly connected with to the inboard ring rail limit side surface of two sets of rotation lantern rings 4, two sets of magnetic induction enhancement structures include a set of first magnetic induction enhancement subassembly and a set of second magnetic induction enhancement subassembly 5, and first magnetic induction enhancement subassembly is located opening magnetic ring 1's outside, second magnetic induction enhancement subassembly 5 is located opening magnetic ring 1's inside;
the second magnetic induction reinforcing assembly 5 comprises a bearing rotor 51, a brake ring 592 is arranged on the surface of the back side end of the bearing rotor 51, a magnetic gear 52 is arranged on the outer side of the bearing rotor 51, the left and right tooth angle ends of the outer side of the magnetic gear 52 are in meshed connection with a first half angle gear 53 and a second half angle gear 58, a first insulating metal short rod 54 and a second insulating metal short rod 57 are respectively arranged in the first half angle gear 53 and the second half angle gear 58, a first half ring member 55 and a second half ring member 59 are respectively integrally formed on the outer edge of the first half ring member 53 and the outer edge of the second half ring member 59, and a first superconducting magnetic sheet 56 and a second superconducting magnetic sheet 591 are fixedly connected on the outer edge side of the first half ring member 55 and the second half ring member 59.
The first embodiment of the present invention achieves the effects that, after the feedback damping coil 2 is wound around the open magnetic flux collecting ring 1, the two sets of current wires 3 with opposite current flows are electrically connected to the low voltage terminal and the high voltage terminal respectively, the feedback damping coil 2 is matched with the ground resistor 17 to ensure the effective operation of the circuit, then when the tunneling giant magneto-resistive dc sensor operates, the generated electrons form a spin state, and the direction of the spin of the electrons is the same as the magnetization direction of the first superconducting magnetic sheet 56 and the second superconducting magnetic sheet 591, then when the magnetic field effect is generated, the bearing rotor 51 drives the magnetic gear 52 to rotate, the bearing rotor 51 comprises three rotors, and the magnetic pole pair numbers of each rotor are different, so that under the interaction of the magnetic gear 52 and the magnetic field, a torque force is formed, the first half angle gear 53 and the second half angle gear 58 on two sides are driven to rotate around the magnetic gear 52 on the surface of the rotating collar 4 under the cooperation of the first insulating metal short rod 54 and the second insulating metal short rod 57, the first superconducting magnetic sheet 56 and the second superconducting magnetic sheet 591 are driven to perform circular track operation, a group of first magnetic induction reinforcing components and a group of second magnetic induction reinforcing components 5 have the same structure, the effective range of the first magnetic induction reinforcing components is larger than that of the second magnetic induction reinforcing components 5, the first magnetic induction reinforcing components rotate outside the opening magnetic gathering ring 1, the second magnetic induction reinforcing components 5 rotate inside the opening magnetic gathering ring 1, normal operation of the feedback damping coil 2 is not interfered, the first magnetic induction reinforcing components and the second magnetic induction reinforcing components 5 are convenient to form internal and external magnetic field effects, generated electrons are guided, interference of external magnetic fields on a measuring system is reduced, the stability of the system is improved, so that when the first superconducting magnetic sheet 56 and the second superconducting magnetic sheet 591 block scattered electrons in the rotating process, the quantity of electrons passing through the magnetic layer is reduced, the high impedance of the whole system is guaranteed, the measurement accuracy of weak electron beams is improved, meanwhile, the first magnetic induction reinforcing component or the second magnetic induction reinforcing component 5 can stop rotating under the control action of the braking ring 592 respectively, the second magnetic induction reinforcing component 5 rotates independently in the opening magnetic focusing ring 1 or the first magnetic induction reinforcing component rotates independently outside the opening magnetic focusing ring 1, the quantity of electrons passing through the magnetic layer is improved, the whole system presents low impedance, air rotational flow is formed in the shielding sleeve 20 under the rotating fit of the first superconducting magnetic sheet 56 and the second superconducting magnetic sheet 591, the heat focusing performance of the feedback damping coil 2 and the opening magnetic focusing ring 1 is further reduced, and the whole operation of the system is further guaranteed.
Embodiment two: according to the embodiments shown in fig. 4, 5, 10, 11 and 12, a magnetoresistive sensor chip 6 and a TMR sensor chip 7 are respectively disposed up and down in an air gap of an open magnetic flux ring 1, the magnetoresistive sensor chip 6 and the TMR sensor chip 7 are respectively electrically connected with a first current-carrying conductor 12 and a second current-carrying conductor 13 through a signal transmission circuit, the first current-carrying conductor 12 and the second current-carrying conductor 13 are electrically connected with a power supply 14 through the signal transmission circuit, the power supply 14 is electrically connected with a voltage stabilizer 11 through an output current, and the voltage stabilizer 11 is respectively connected with a resistor R through a resistor R 2 And resistance R 3 The output end of the magneto-resistance sensor chip 6 is connected with a filter 18 through a wire, the output end of the TMR sensor chip 7 is connected with an operational amplifier 8 through a wire, and the filter 18 and the operational amplifier 8 are connected with a resistor R 1 The first triode 9 and the second triode 10 are respectively and electrically connected, the first triode 9 and the second triode 10 are connected in series with the voltage stabilizer 11, and the surfaces of the filter 18 and the operational amplifier 8 are connected with the ECU19 through wires.
The second embodiment achieves the effect that the sensitivity of the integral direct current sensor is increased under the cooperation of the magneto-resistance sensor chip 6 and the TMR sensor chip 7 which are arranged in the opening air gap of the opening magnetic focusing ring 1Sensitivity, to realize detection of smaller current, and the upper and lower width of the open air gap should be as small as possible, so that the magneto-resistance sensor chip 6 and TMR sensor chip 7 can be just put in, so as to be convenient for improving the capability of gathering magnetic field, then under the cooperation of the voltage stabilizer 11, the output voltages of the first current-carrying conductor 12 and the second current-carrying conductor 13 and the power supply 14 are stabilized, the output voltage of 150kV is controlled in a fixed range, so as to ensure the stable use of the whole system circuit, then under the cooperation of the filter 18 and the operational amplifier 8, the magnetic field generated by the open magneto-gathering ring 11 and the feedback damping coil 2 is amplified, and then under the cooperation of the resistor R 1 Under the matching of the circuits, the filter 18, the operational amplifier 8, the first triode 9 and the second triode 10 are connected for operation, so that the output of the first triode 9 is low level, the output of the second triode 10 is high level, the first triode 9 and the second triode 10 are respectively an NPN type first triode 9 and a PNP type second triode 10, then under the matching of the ECU19, the information input by the filter 18 and the operational amplifier 8 is calculated, processed and judged, then instruction output is carried out, the output signals of the first triode 9 and the second triode 10 are controlled, and the stability of the first triode 9 and the second triode 10 in a circuit used as an electronic switch and signal amplification is ensured.
Embodiment III: according to fig. 1 and 6, a shielding sleeve 20 is arranged at the outer part of an opening magnetic flux collecting ring 1, sealing sleeve fastening ends 21 are arranged at the left end and the right end of the shielding sleeve 20, a base 22 is fixedly connected to the bottom of the shielding sleeve 20, a connecting sheet plate 23 is fixedly arranged at the left end and the right end of the base 22, a mounting screw 24 is fixedly embedded in the connecting sheet plate 23, a connecting terminal 25 is arranged on the side wall surface of the base 22, four groups of connecting terminals 26 are arranged in the connecting terminal 25, each group of connecting terminals 26 comprises a low-voltage connecting terminal, a high-voltage connecting terminal, a signal output terminal and a signal input terminal, a plurality of laminations are arranged at the outer part of the opening magnetic flux collecting ring 1, a first long lamination 27 and a second long lamination 31 are respectively arranged at the upper end and the lower end of each of the plurality of laminations, a first short lamination 28 and a second short lamination 30 are respectively arranged between the first long lamination 27 and the second long lamination 31, the first short lamination 28 and the second short lamination 30 are arranged at two sides of the first long lamination 27 and the second long lamination 31, and a hollow section 29 is formed by stacking the first short lamination 28 and the second short lamination 30.
The third embodiment of the present invention achieves the effect that the shielding casing 20 is used to wrap the first long lamination 27 and the second long lamination 31, the first short lamination 28 and the second short lamination 30, so that the formed hollow section 29 protects the outside of the first magnetic induction reinforcing component, and the hollow section 29 is formed, so that the current flowing through the opening magnetic gathering ring 1 is further improved, after the magnetic fields with equal magnitude and opposite directions are generated in the inner magnetic sensitive area and the outer magnetic sensitive area of the first magnetic induction reinforcing component and the second magnetic induction reinforcing component 5, the voltage is generated through the wheatstone bridge circuit to output, the purpose of improving the induced current is facilitated, and under the cooperation of the fastening end 21 of the sealing collar outside the shielding casing 20, the sealing collar protects the shielding casing 20, and the influence of the external magnetic field on the internal electrons is avoided from the generated gap.
The wiring diagrams of the devices such as the magnetoresistive sensor chip 6, the TMR sensor chip 7, the voltage stabilizer 11, the filter 18, the ECU19 and the like in the present invention belong to common knowledge in the art, the working principle thereof is a known technology, and the model thereof is selected to be a proper model according to actual use, so that the control mode and wiring arrangement of the devices such as the magnetoresistive sensor chip 6, the TMR sensor chip 7, the voltage stabilizer 11, the filter 18, the ECU19 and the like are not explained in detail.
The application method and the working principle of the device are as follows: firstly, the current wires 3 with opposite current flow directions are respectively and electrically connected with a low-voltage wiring terminal and a high-voltage wiring terminal to carry out electrifying operation, so that after the feedback damping coil 2 is wound on the opening magnetic focusing ring 1 to form electrifying reaction, generated electrons form a spin state, after a magnetic field is formed inside the hollow section 29, three rotors in the bearing rotor 51 are sequentially arranged, torque force is formed under the interaction of the magnetic gear 52 and the magnetic field under the condition that the magnetic pole pair numbers of each rotor are different, the bearing rotor 51 can further drive the magnetic gear 52 to rotate, the first half-angle gear 53 and the second half-angle gear 58 on two sides rotate around the magnetic gear 52 on the surface of the rotating collar 4 under the cooperation of the first insulating metal short rod 54 and the second insulating metal short rod 57 by utilizing the rotatability of the magnetic gear 52,the first superconducting magnetic sheet 56 and the second superconducting magnetic sheet 591 are driven to move in a circular track, and the first magnetic induction reinforcing component and the second magnetic induction reinforcing component 5 are identical in structure, so that the first magnetic induction reinforcing component rotates outside the opening magnetic focusing ring 1, the second magnetic induction reinforcing component 5 rotates inside the opening magnetic focusing ring 1 and does not interfere with the normal operation of the feedback damping coil 2, the first magnetic induction reinforcing component and the second magnetic induction reinforcing component 5 form an internal and external magnetic field effect, generated electrons are guided, the interference of an external magnetic field on a measuring system is reduced, the stability of the system is improved, the scattered electrons are blocked in the rotating process of the first superconducting magnetic sheet 56 and the second superconducting magnetic sheet 591, the number of electrons passing through a magnetic layer is reduced, the high resistance of the whole system is ensured, the measuring accuracy of weak electron flow is improved, simultaneously, the first magnetic induction reinforcing component or the second magnetic induction reinforcing component 5 can stop rotating under the control action of the braking ring 592 respectively, the second magnetic induction reinforcing component 5 rotates independently inside the opening magnetic focusing ring 1, or the first magnetic induction reinforcing component rotates independently outside the opening magnetic focusing ring 1, the number of electrons passing through the magnetic layers is increased, the whole system presents low impedance, air rotational flow is formed inside the shielding shell 20 under the rotating fit of the first superconducting magnetic sheet 56 and the second superconducting magnetic sheet 591, the heat accumulation of the feedback damping coil 2 and the opening magnetic focusing ring 1 is reduced, the whole operation of the system is further ensured, then the sensitivity of the whole direct current sensor is increased under the matching of the magneto-resistance sensor chip 6 and the TMR sensor chip 7 placed inside the opening air gap of the opening magnetic focusing ring 1, to realize the detection of smaller current, under the cooperation of the voltage stabilizer 11, the output voltages of the first current-carrying conductor 12, the second current-carrying conductor 13 and the power supply 14 are stabilized, the output voltage of 150kV is controlled in a fixed range to ensure the stable use of the whole system circuit, then under the cooperation of the filter 18 and the operational amplifier 8, the magnetic fields generated by the open magnetic focusing ring 11 and the feedback damping coil 2 are amplified, and then under the cooperation of the resistor R 1 Under the matching of the lines, the filter 18 is connected with the operational amplifier 8 and the first triode 9 and the second triode 10The operation is that the output of the first triode 9 is low level, the output of the second triode 10 is high level, then the information of the filter 18 and the operational amplifier 8 is transmitted to the ECU19 for calculation, processing and judgment, then instruction output is carried out, the output signals of the first triode 9 and the second triode 10 are controlled, and the stability of the first triode 9 and the second triode 10 used as electronic switches and in a signal amplifying circuit is ensured.
Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art will appreciate that various modifications may be made to the technical solutions described in the foregoing embodiments, or equivalents may be substituted for some of the technical features thereof, and any modifications, equivalents, improvements or modifications made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. A150 kV tunneling giant magneto-resistance direct current sensor is characterized in that: the magnetic induction device comprises an opening magnetic focusing ring (1), wherein the opening magnetic focusing ring (1) is of an annular structure with an air gap, two current wires (3) with opposite current flow directions penetrate through the inside of the opening magnetic focusing ring (1), a feedback damping coil (2) is wound outside the left side end of the opening magnetic focusing ring (1), two ends of the feedback damping coil (2) are electrically connected with a signal conveying circuit, the output of the signal conveying circuit supplies power for the feedback damping coil (2), the other end of the feedback damping coil (2) is electrically connected with a grounding resistor (17), the voltages at two ends of the grounding resistor (17) are output ends, two groups of rotating lantern rings (4) are sleeved on the outer circumference sides of the front end and the rear end of the current wires (3), two groups of inner side annular rail side surfaces of the rotating lantern rings (4) are fixedly connected with two groups of magnetic induction reinforcing structures, the two groups of the magnetic induction reinforcing structures comprise a group of first magnetic induction reinforcing components and a group of second magnetic induction components (5), the first magnetic induction components are positioned outside the opening magnetic induction ring (1), and the second magnetic induction components (5) are positioned inside the opening magnetic induction components (1);
the second magnetic induction reinforcing component (5) comprises a bearing rotor (51), a braking ring (592) is arranged on the surface of the back side end of the bearing rotor (51), a magnetic gear (52) is arranged outside the bearing rotor (51), a first half-angle gear (53) and a second half-angle gear (58) are connected with the tooth angle ends of the left side and the right side of the outside of the magnetic gear (52) in a meshed mode, a first insulating metal short rod (54) and a second insulating metal short rod (57) are respectively arranged inside the first half-angle gear (53) and the second half-angle gear (58), a first half-ring piece (55) and a second half-ring piece (59) are integrally formed on the outer wheel edges of the first half-ring piece (55) and the second half-ring piece (59), and a first superconducting magnetic sheet (56) and a second superconducting magnetic sheet (591) are fixedly connected on the outer wall edges of the first half-ring piece (55) and the second half-ring piece (59).
2. The 150kV tunneling giant magnetoresistance direct current sensor according to claim 1, wherein: a magneto-resistance sensor chip (6) and a TMR sensor chip (7) are respectively arranged in an air gap of the opening magnetic focusing ring (1) up and down, the magneto-resistance sensor chip (6) and the TMR sensor chip (7) are respectively electrically connected with a first current carrying conductor (12) and a second current carrying conductor (13) through a signal transmission circuit, the first current carrying conductor (12) and the second current carrying conductor (13) are electrically connected with a power supply (14) through the signal transmission circuit, the power supply (14) is electrically connected with a voltage stabilizer (11) through output current, and the voltage stabilizer (11) is respectively connected with a resistor R 2 And resistance R 3 The first voltage stabilizing circuit (15) and the second voltage stabilizing circuit (16) are electrically connected.
3. A 150kV tunneling giant magnetoresistive dc sensor according to claim 2, characterized in that: the output end of the magnetic resistance sensor chip (6) is connected with a filter (18) through a wire, and the output end of the TMR sensor chip (7) is connected with an operational amplifier (8) through a wire.
4. A 150kV tunneling giant magnetoresistive dc sensor as claimed in claim 3, wherein: the filter (18) and the operational amplifier (8) are connected via a resistor R 1 And a first triode (9) and a second triode (10) are respectively and electrically connected.
5. The 150kV tunneling giant magnetoresistive dc sensor of claim 4 wherein: the first triode (9) and the second triode (10) are connected with the voltage stabilizer (11) in series, and the surfaces of the filter (18) and the operational amplifier (8) are connected with an ECU (19) through wires.
6. The 150kV tunneling giant magnetoresistive dc sensor of claim 5, wherein: the outside installation of opening magnetic focusing ring (1) is provided with shielding cover shell (20), both ends setting about shielding cover shell (20) are installed sealed lantern ring fastening end (21), the bottom fastening connection of shielding cover shell (20) has base (22).
7. The 150kV tunneling giant magnetoresistive dc sensor of claim 6 wherein: connecting sheet plates (23) are fixedly installed at the left end and the right end of the base (22), and mounting screws (24) are embedded and fastened in the connecting sheet plates (23).
8. The 150kV tunneling giant magnetoresistive dc sensor of claim 6 wherein: the side wall surface of the base (22) is provided with a connecting terminal (25), four groups of connecting terminals (26) are arranged in the connecting terminal (25), and the four groups of connecting terminals (26) respectively comprise a low-voltage connecting terminal, a high-voltage connecting terminal, a signal output terminal and a signal input terminal.
9. The 150kV tunneling giant magnetoresistance direct current sensor according to claim 1, wherein: the outside of opening magnetic focusing ring (1) includes polylith lamination, the upper and lower two of polylith lamination are first long lamination (27) and second long lamination (31) respectively, be provided with first short lamination (28) and second short lamination (30) between first long lamination (27) and the second long lamination (31) respectively.
10. The 150kV tunneling giant magnetoresistive dc sensor of claim 9, wherein: the first short lamination (28) and the second short lamination (30) are arranged on two sides of the first long lamination (27) and the second long lamination (31), and hollow sections (29) are formed by overlapping the inside of the first short lamination (28) and the inside of the second short lamination (30).
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