CN117288231A - Flexible force magnetic bimodal sensor array - Google Patents
Flexible force magnetic bimodal sensor array Download PDFInfo
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- CN117288231A CN117288231A CN202311242904.0A CN202311242904A CN117288231A CN 117288231 A CN117288231 A CN 117288231A CN 202311242904 A CN202311242904 A CN 202311242904A CN 117288231 A CN117288231 A CN 117288231A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
- G01R33/05—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle in thin-film element
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2506/00—Halogenated polymers
- B05D2506/10—Fluorinated polymers
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Abstract
The invention relates to a flexible force magnetic bimodal sensor array. The sensor array includes: rectangular conductive copper sheets are distributed on the upper surface matrix of the conversion layer, and one side of each rectangular conductive copper sheet is provided with a strip-shaped conductive copper sheet with the same width; the magnetostriction film is attached to the rectangular conductive copper sheet; the piezoelectric film force sensitive layer is covered on the flexible circuit board conversion layer; the number of the rectangular conductive copper sheets and the conductive thin layer units is 9, and the rectangular conductive copper sheets and the conductive thin layer units form an array of 3*3. The invention has the advantages of easy miniaturization and simple circuit, and simultaneously has the advantages of high sensitivity, short response time and recovery time and good compatibility, and greatly simplifies the design and manufacture of the force-magnetic bimodal sensor.
Description
Technical field:
the invention relates to the technical field of force and magnetic sensors, in particular to a bimodal sensor array capable of detecting force and magnetism and a preparation method thereof.
The background technology is as follows:
as the chatGPT and other large models are continuously landed on various intelligent terminals, the movable intelligent robot is also continuously integrated into various application scenes. At present, when a movable grabbing robot grabs a certain object in a certain space, a fixed action track needs to be preset in advance or a position coordinate map of the space needs to be built. If the robot is placed in a new space, the original position coordinate information of the robot is invalid, and the preset positioning mode is difficult to flexibly apply the movable grabbing robot to various scenes. At the moment, real-time detection of object position information and real-time perception of the position of the manipulator of the movable robot become key links of the movable robot for flexibly coping with various application scenes. Real-time detection of object position information may employ an array of pressure sensors to locate where an object is placed on the sensor array. A permanent magnet is arranged at the position of the finger tip of the manipulator, and the relative spatial position of the manipulator and the sensor array can be perceived in real time through the response of the magnetic sensor array. A bimodal sensor that can sense both force and magnetism can be used.
In the current force magnetic bimodal sensor, a specific sensing layer (made of a magnetostrictive film or the like) is used as a sensing element, and a circuit or other devices are used as a signal conversion device. These are all processes for converting the mechanocomagnetic physical quantity into an electrical signal by utilizing the characteristics and electrical mechanisms of materials. For example, patent CN 115435818A, a contact/non-contact force magnetic dual-mode sensing sensor based on magnetostrictive film (bulletin day 2022.12.06). The invention provides a force magnetic bimodal detection sensor, which uses a magnetostrictive thin material film as a sensing element and a coil as a signal conversion device. The use of coil elements makes this sensor require a relatively complex drive circuit and does not allow the sensor unit to be miniaturized and difficult to construct into a relatively dense sensor array.
The invention comprises the following steps:
the invention aims to provide a flexible force magnetic bimodal sensor array aiming at the defects in the prior art. Each unit of the array sensor consists of a force sensitive layer, a magnetic sensitive layer and a conversion layer, wherein the P (VDF-TrFE) piezoelectric film force sensitive layer, the magnetostrictive film magnetic sensitive layer and the flexible circuit board conversion layer are vertically arranged to form a planar flexible sensing structure, the change of magnetization state in the magnetostrictive film under the magnetic stripe piece and the stress change suffered by the P (VDF-TrFE) piezoelectric film can be sensed, the magnetostrictive film can convert a magnetic signal into a force signal to be transmitted to the P (VDF-TrFE) piezoelectric film through the tight coupling of the magnetostrictive film and the P (VDF-TrFE) piezoelectric film, and the P (VDF-TrFE) piezoelectric film can convert the force signal from the magnetostrictive film and an external contact force signal into an electric signal. The sensing of the force magnetic bimodal information is realized by measuring the output electric signal. In addition, the invention adopts the electrodeposition technology under the induced magnetic field to prepare the magnetostrictive film array, ensures the consistency of each sensing unit, reduces the preparation difficulty and the cost and improves the magnetic sensitivity of the surface normal force. The invention perceives the magnetization state change of the magnetostriction film by the P (VDF-TrFE) piezoelectric film, has the advantages of easy miniaturization and simple circuit, and has no coil structure and drive circuit. The method has the excellent performances of high sensitivity, short response time and recovery time and good compatibility. The force magnetic signal is sensed by one structure and one lead, so that the design and the manufacture of the force magnetic bimodal sensor are greatly simplified.
The technical scheme adopted for solving the technical problems is as follows:
a flexible force magnetic bimodal sensor array, the sensor array comprising: rectangular conductive copper sheets are distributed on the upper surface matrix of the conversion layer, and one side of each rectangular conductive copper sheet is provided with a strip-shaped conductive copper sheet with the same width; the magnetostriction film is attached to the rectangular conductive copper sheet; the piezoelectric film force sensitive layer covers the flexible circuit board conversion layer, and the front part of the piezoelectric film force sensitive layer above the strip-shaped conductive copper sheet is a blank area cut and hollowed out; the conductive thin layer units distributed in a matrix are distributed on the piezoelectric thin film power sensitive layer and the hollowed-out area, and the projection position of each conductive thin layer unit is overlapped with the positions of a group of rectangular conductive copper sheets, a blank area and a strip-shaped conductive copper sheet;
the number of the rectangular conductive copper sheets and the number of the conductive thin layer units are 9, so that an array of 3*3 is formed;
the rectangle is preferably square, and the side length is 5-10 mm; the distance between the adjacent square conductive copper sheets is 4-5 mm, and the distance between each square conductive copper sheet and the corresponding strip-shaped conductive copper sheet is 1-2 mm.
The conductive thin layer is made of conductive silver paste, silver or copper conductive adhesive tape; the thickness range is 1-1000 micrometers;
the piezoelectric film sensitive layer is made of P (VDF-TrFE); the thickness range is 1-100 micrometers;
the magnetostrictive film material is Fe-Co, fe-Ni, fe-Ga or Terfenol; the thickness range is 1-100 micrometers;
the conversion layer is a flexible circuit board.
The square conductive copper sheet has a thickness of 50-200 micrometers and a side length of 5-10 mm.
The strip-shaped conductive copper sheet has the thickness of 50-200 micrometers and the width of 1-3 mm.
The preparation method of the flexible force magnetic bimodal sensor array comprises the following steps:
(1) Preparing a Co-Fe magnetostrictive film by adopting an electro-deposition method under an induced magnetic field:
the strip-shaped conductive copper sheet on the flexible circuit board is pasted and sealed by an electroplating adhesive tape, the flexible circuit board and the square conductive copper sheet on the flexible circuit board are pickled and then used as a cathode, a platinum plate is used as an anode, a Co-Fe alloy electrodeposition solution is used as an electrolyte, the two electrode plates are vertically and mutually parallel to each other and placed in the electrolyte, the pH value of the electrolyte is controlled to be 2.5-3.5 by dropwise adding a dilute sulfuric acid solution in a direct current magnetic field environment and a direct current power supply, the flexible circuit board is taken out after the deposition is finished, and is cleaned by alcohol, and then air-dried, so that 9 magnetostrictive films deposited on the flexible circuit board are obtained.
The composition of the electrodeposition solution comprises iron sulfate, cobalt sulfate, complexing agent, buffering agent, antioxidant and surface brightening agent, and the concentration of the electrodeposition solution is FeSO 4 ·7H 2 O 0.01～0.1mol/L，CoSO 4 ·7H 2 0.1 to 0.5mol/L of O, 0.2 to 0.5mol/L of sodium citrate, 0.2 to 0.3mol/L of boric acid, 0.5 to 2g/L of ascorbic acid, 1 to 3g/L of saccharin and 0.01 to 0.05g/L of sodium dodecyl sulfate;
the magnetic field value is as follows: 50-500 kA/m; the current is controlled to be 0.30-0.40A/cm 2 Dropwise adding 10% dilute sulfuric acid solution to control the pH of the electrolyte to 2.5-3.5, and performing electrodeposition for 20-100 min;
(2) P (VDF-TrFE) piezoelectric film was prepared by spin coating:
placing the flexible circuit board with the deposited Co-Fe film as a substrate on a spin coater, spin-coating a P (VDF-TrFE) solution, and annealing at 120-140 ℃ for 3.5-4.5 hours; finally, placing the piezoelectric film into field intensity of 125-130 MV/m for polarization for 25-35 minutes to obtain a piezoelectric film;
wherein, the solvent of the P (VDF-TrFE) solution is DMF, and the concentration is 5-20 g/100ml; the rotating speed of the spin coater is 1000-2000 r/min, the spin coating is repeated for 3-10 times, and each spin coating lasts for 60-120 seconds;
(3) Preparing a conductive thin layer by adopting an electroless plating method:
cutting a P (VDF-TrFE) piezoelectric film above the strip-shaped conductive copper sheet on the flexible circuit board to expose the strip-shaped conductive copper sheet, placing a silica gel mold on the flexible circuit board, enabling nine hollowed-out parts of the silica gel mold to be opposite to nine rectangular parts formed by the square conductive copper sheet 5 and the strip-shaped conductive copper sheet, clamping the silica gel mold and the flexible circuit board by two hard clamps, keeping the rectangular hollowed-out parts of the hard clamps corresponding to hollowed-out parts of the silica gel mold 9, and clamping by screws to form 9 groove-shaped containers; adding stannous sulfate serving as a sensitizer into the nine groove-shaped containers, then dripping silver plating solution into the 9 groove-shaped containers at normal temperature, growing for 10-15 minutes, and then cleaning the silver plating solution; and repeatedly dripping silver plating solution, growing and cleaning for 1-3 times to obtain nine conductive films with the thickness of 30-60 micrometers made of silver materials.
The invention has the substantial characteristics that:
the magnetic sensor in the prior art is of a magnetostrictive film/piezoelectric film/magnetostrictive film three-layer structure and is used for positioning on magnetic detection. And the magnetostrictive film of the sensor with the three-layer structure of magnetostrictive film/piezoelectric film/magnetostrictive film is made into a sheet similar to that made by a rolling process or made by a magnetron sputtering mode, the processes are difficult to be carried out on a flexible circuit board or have high cost,
the invention adopts an electrodeposition mode to prepare the magnetostrictive film on the flexible circuit board; a magnetoelectric composite material formed by the piezoelectric film is used as a sensitive material; and the electro-deposition method is adopted to regulate and control the material structure under the induction magnetic field, and the perpendicular anisotropy is induced, so that the surface normal force magnetic sensitive material is obtained.
The beneficial effects of the invention are as follows:
1. compared with other existing flexible force magnetic bimodal sensors, the flexible force magnetic bimodal sensor adopts complex circuit elements, such as a driving coil and a pickup coil, and a driving circuit is needed for driving. The force-magnetism bimodal sensor does not need a driving circuit to drive, and only needs to collect voltage signals output by the sensor.
2. When the magnetostrictive film is prepared, the FPC is used as a substrate, and all units on the sensing array are prepared simultaneously in an electrodeposition mode, so that the thickness consistency of the magnetostrictive film prepared on the FPC is ensured. The problem of inconsistent response effect of each sensing unit on the array manufactured by the traditional adhesive method is solved. Compared with the preparation method of magnetron sputtering, the preparation method of the invention has lower cost.
3. The sensor has natural coupling among all layers, no intermediate adhesive medium, large magneto-electric coupling coefficient and high efficiency.
4. The invention adopts the method of electro-deposition under the induced magnetic field to regulate and control the structure of the material, thus obtaining the surface normal force magnetic sensitive material, leading the material to have higher saturation magnetic induction intensity in the surface normal direction, obviously improving the magnetostriction rate and improving the piezomagnetic coefficient. When the size of the externally applied magnetic field is 500kA/m, the saturated magnetic induction intensity of the magnetostrictive film obtained by electro-deposition under the condition of not adopting an induced magnetic field is 4.09kA/m, and the saturated magnetic induction intensity of the magnetostrictive film prepared by adopting the electro-deposition method under the condition of adopting the induced magnetic field of 50kA/m can reach 8.9kA/m. When the external magnetic field is 15kA/m, the magnetostriction rate of the magnetostrictive film obtained by electrodeposition under the condition of not adopting an induced magnetic field is 65.4ppm, and the magnetostriction rate of the magnetostrictive film prepared by the electrodeposition method under the induced magnetic field of 50kA/m can reach 80.2ppm. When the external magnetic field is 50kA/m, the magnetostriction film obtained by electro-deposition under the condition of not adopting an induced magnetic field has the piezomagnetic coefficient of 6.1nm/A, and the magnetostriction film prepared by adopting the electro-deposition method under the induced magnetic field of 50kA/m has the piezomagnetic coefficient of 7.8nm/A.
Description of the drawings:
FIG. 1 is a schematic diagram of a flexible force magnetic bimodal sensor array structure
FIG. 2 is a circuit diagram of a flexible circuit board
FIG. 3 shows a silica gel mold for producing a conductive thin layer 1 by chemical silver plating
FIG. 4 shows a hard jig used in the process of preparing the conductive thin layer 1 by electroless silver plating
Fig. 5 is a diagram showing the positional correspondence among the flexible circuit board, the silicone mold and the hard clamp when the conductive thin layer 1 is manufactured by adopting the chemical silver plating method
FIG. 6 is a schematic diagram of an apparatus for electro-deposition process using induced magnetic fields
Fig. 7: the performance comparison graph of the magnetostrictive film prepared under the conditions of an induced magnetic field of 50kA/m and no induced magnetic field; wherein, FIG. 7 (a) is a graph showing the magnetization curve of magnetostrictive films prepared in the presence and absence of an induced magnetic field; FIG. 7 (b) is a graph comparing magnetostriction rate curves of magnetostrictive films prepared in the presence and absence of an induced magnetic field; FIG. 7 (c) is a graph comparing the piezomagnetic coefficients of magnetostrictive films prepared in the presence and absence of an induced magnetic field;
in the figure: 1-a conductive lamellar unit; 2-piezoelectric film (force sensitive layer); 3-magnetostrictive film (magnetically sensitive layer); 4-flexible circuit board (conversion layer); 5-square conductive copper sheets on the flexible circuit board; 6-strip-shaped conductive copper sheets on the flexible circuit board; 7-FPC interface; 8-a hard clamp; 9-a silica gel mold; 10-through holes; 11-platinum electrode; 12-magnetic pole of DC magnetic field steady current power supply;
the specific embodiment is as follows:
example 1: the array type force-magnetism bimodal sensor realizes the detection of mechanical and magnetic characteristics by utilizing magnetostriction effect and piezoelectric effect. The Fe-Co magnetostrictive film layer 3 is magnetically deformed to detect a magnetic field, while the P (VDF-TrFE) piezoelectric film layer 2 uses the piezoelectric effect to detect an externally applied force. Through the structure of the ME composite material, the change of force and magnetic field is converted into an electric signal, so that the simultaneous monitoring of the change of physical force and magnetic field is realized. By integrating the magnetostrictive and piezoelectric effects, the sensor can sensitively detect and convert into a readable signal to provide information about the force and magnetic field.
The invention is further described in detail below with reference to the drawings. The present embodiment is only a specific description of the invention, and is not to be construed as limiting the scope of protection.
The structure of the flexible force magnetic bimodal sensor array is shown in figure 1, and the sensor comprises: rectangular conductive copper sheets 5 are distributed on the upper surface matrix of the flexible circuit board conversion layer 4, and one side of each rectangular conductive copper sheet 5 is provided with a strip-shaped conductive copper sheet 6 with the same width; the magnetostrictive film 3 is attached to the rectangular conductive copper sheet 5; the piezoelectric film force sensitive layer 2 is covered on the magnetostrictive film 3, the rectangular conductive copper sheet 5, the strip-shaped conductive copper sheet 6 and the flexible circuit board conversion layer 4, and a blank area which is cut and hollowed is formed on the piezoelectric film force sensitive layer 2 at the position right above the strip-shaped conductive copper sheet 6; the conductive thin layer units 1 distributed in a matrix are distributed on the piezoelectric thin film force sensitive layer 2 and the hollowed-out area, and the projection position of each conductive thin layer unit 1 is overlapped with the positions of a group of rectangular conductive copper sheets 5, blank areas and strip-shaped conductive copper sheets 6;
the number of the rectangular conductive copper sheets 5 and the number of the conductive thin layer units 1 are 9, so as to form an array 3*3;
the rectangle is preferably square, and the side length is 10mm; the distance between the adjacent square conductive copper sheets 5 is 4-5 mm, and the distance between each square conductive copper sheet 5 and the corresponding strip-shaped conductive copper sheet 6 is 1-2 mm.
The conductive thin layer 1 is made of conductive material, is attached to the upper side of the piezoelectric thin film force sensitive layer, and is in natural adhesion connection with the strip-shaped conductive copper sheet 6 on the flexible circuit board. The material is conductive silver paste, silver or copper conductive adhesive tape; the thickness ranges from 1 to 1000 microns (20 microns is used in this example);
the force sensitive layer 2 is a piezoelectric film and is made of P (VDF-TrFE); the thickness ranges from 1 to 100 microns (20 microns is used in this example);
the magnetic sensitive layer 3 is a magnetostrictive film made of Fe-Co, fe-Ni, fe-Ga or Terfenol (in this embodiment, fe is used) 30 Co 70 ) The method comprises the steps of carrying out a first treatment on the surface of the The thickness ranges from 1 to 100 microns (20 microns is used in this example);
the conversion layer 4 is a flexible circuit board, the three base layers are made of Polyimide (PI), conductive layers are sandwiched between the layers, and the material is copper. The thickness of the flexible circuit board is 100 to 200 micrometers (the thickness used in this embodiment is 110 micrometers). The specific circuit structure diagram is shown in fig. 2, and the main components of the flexible circuit board comprise square conductive copper sheets 5, strip conductive copper sheets 6 and FPC interfaces 7.
The square conductive copper sheet 5 has a thickness of 50-200 micrometers (the thickness adopted in the embodiment is 50 micrometers) and a width of 5-10 mm (the width adopted in the embodiment is 10 mm).
The thickness of the strip-shaped conductive copper sheet 6 is 50-200 micrometers (the thickness adopted by the embodiment is 50 micrometers), the length is equal to the width of the square conductive copper sheet 5, and the width is 1-3 mm (the width adopted by the embodiment is 1 mm). The distance from the square conductive copper sheet 5 is 1-2 mm (the width of the implementation distance is 2 mm).
And the FPC interface 7 is reinforced by PI.
In the invention, a set of silica gel mold 9 and a hard clamp 8 are designed when the conductive thin layer 1 is prepared by adopting an electroless plating method, and the silica gel mold 9 and the hard clamp 8 are shown in fig. 3 and 4. Used according to the position correspondence of fig. 5; when the device is used, the silica gel mold 9 and the flexible circuit board 4 are tightly attached together, then the silica gel mold 9 and the flexible circuit board 4 are clamped by the two hard clamps 8, and M3 screws are installed and screwed on M3 through holes of the hard clamps 8, so that the silica gel mold 9 and the flexible circuit board 4 are tightly attached. When the chemical plating is carried out to prepare the conductive thin layer 1, silver plating liquid can be ensured to stay in the hollowed-out groove of the silica gel mold 9 for a long time and cannot be diffused.
The thickness of the silica gel mold 9 is 2mm, and the silica gel mold has certain elasticity and water-proof performance; the size of the middle 9 hollowed-out rectangular parts is 10mm or 13mm;
the thickness of the hard clamp 8 is 1.6mm, the material is FR-4, the hardness is high, the through holes 10 on the hard clamp are M3 type holes, and the sizes of the middle 9 hollowed-out rectangular parts are 10mm or 13mm;
the preparation method for the flexible force magnetic bimodal sensor array comprises the following steps:
(1) The method for preparing the Co-Fe magnetostrictive film by adopting the electro-deposition method under the induced magnetic field comprises the following steps:
the strip-shaped conductive copper sheet 6 on the flexible circuit board 4 is sealed by an electroplating adhesive tape, the flexible circuit board 4 and the square conductive copper sheet 5 thereon are pickled and then used as a cathode, the platinum plate 11 is used as an anode, the Co-Fe alloy electrodeposition solution is used as electrolyte, the two pole plates are vertically and mutually parallel to each other and placed in the electrolyte, a direct current magnetic field environment is provided by a direct current magnetic field steady current power supply, the electrodeposition device is placed in the direct current magnetic field environment, the magnetic field is vertical to the two pole plates, and the magnetic field is as follows: 50kA/m, at 50 deg.C, using DC power supply, adopting constant current output mode, current is controlled at 0.35A/cm 2 The pH of the electrolyte was controlled at 3 by dropwise adding 10% dilute sulfuric acid solution, the electrodeposition time was 40min, and the deposition thickness was 20. Mu.m(the dimension is consistent with that of a square conductive copper sheet), after the deposition is finished, the flexible circuit board is taken out, washed by alcohol and then air-dried, and 9 magnetostrictive films 3 deposited on the flexible circuit board 4 are obtained.
The electrodeposition solution consists of iron sulfate, cobalt sulfate, complexing agent, buffering agent, antioxidant, surface brightening agent and the like, and takes electrolyzed water as solvent, and specifically contains FeSO 4 ·7H 2 O 0.05mol/L，CoSO 4 ·7H 2 O0.3 mol/L, sodium citrate 0.3mol/L, boric acid 0.2mol/L, ascorbic acid 1.0g/L, saccharin 2g/L, and sodium dodecyl sulfate 0.03g/L;
(2) The preparation method of the P (VDF-TrFE) piezoelectric film by adopting the spin coating method comprises the following steps:
according to the concentration ratio of 12g/100ml, a certain mass of P (VDF-TrFE) powder is placed in DMF solution, and heating and stirring are carried out, so that P (VDF-TrFE) is completely dissolved in DMF solution. And (3) placing the flexible circuit board with the deposited Co-Fe film as a substrate on a spin coater, adjusting the rotating speed of the spin coater to 2000r/min, repeating spin coating for 5 times, dripping 1ml of solution each time, spin coating for 120 seconds, and drying to obtain the film with the film thickness of about 20 microns. The resulting film was placed in an oven and high temperature annealed at 120 ℃ for 4 hours. Finally, the annealed P (VDF-TrFE) piezoelectric film is put into the field intensity of 125MV/m for polarization for 30 minutes, and the P (VDF-TrFE) piezoelectric film 2 with good piezoelectric property is obtained.
(3) The conductive thin layer 1 is prepared by adopting an electroless plating method, and comprises the following steps:
cutting a P (VDF-TrFE) piezoelectric film above the strip-shaped conductive copper sheet 6 on the flexible circuit board, exposing the strip-shaped conductive copper sheet 6, placing a silica gel mold 9 shown in fig. 3 on the flexible circuit board 4, enabling nine hollowed-out parts of the silica gel mold 9 to be opposite to nine rectangular parts formed by the square-shaped conductive copper sheet 5 and the strip-shaped conductive copper sheet 6, pressing and discharging bubbles between the silica gel mold 9 and the flexible circuit board 4 to enable the silica gel mold 9 and the flexible circuit board 4 to be tightly attached, clamping the silica gel mold 9 and the flexible circuit board 4 by two hard clamps 8, enabling the rectangular hollowed-out parts of the hard clamps 8 to correspond to hollowed-out parts of the silica gel mold 9, installing M3 screws on through holes of M3 type, enabling the hard clamps to be clamped, and completing installation of the silver plating mold to form 9 groove-shaped containers. Adding stannous sulfate serving as a sensitizer into the nine groove-shaped containers, keeping the container for 30 to 60 seconds to enable the surface to adsorb a layer of stannous ions, then naturally flushing the container by slow water flow, and hydrolyzing the stannous ions into colloid in the cleaning process to be adhered to the surface, wherein the colloid is used as seeds for silver growth in silver plating operation. Then 2-4 ml silver plating solution (the mixed solution of glucose and silver ammonia solution is adopted as the main component, and chemical silver plating solution of zirconium-vanadium technology is adopted) is dripped into each groove-shaped container under the normal temperature environment (the ideal temperature is 10-15 ℃), the silver plating solution is kept for 10 minutes, then the silver plating solution is washed away, new silver plating solution is dripped again, and nine conductive films 1 with the thickness of 30-60 microns made of silver materials are obtained after repeating for three times. The conductive film 1 is electrically connected with the strip-shaped conductive copper sheet 6.
Example 2: the other steps are the same as those in example 1, except that in the method for manufacturing the flexible force magnetic bimodal sensor array, the magnetic field is not applied in step (1), that is, the magnitude of the magnetic field is 0kA/m.
The application method of the flexible force magnetic bimodal sensor array comprises the following steps:
the sensor can measure two physical quantities of force and magnetism, and can be used in application of a contact/non-contact object position positioning system. The positive and negative poles of 9 unit sensing units are led out from the FPC interface of the sensor, the two ends of each positive and negative pole of the FPC interface are respectively connected with an amplifying circuit, the voltage signal output by the sensor is amplified, the output end of the amplifying circuit is connected with the AD acquisition port of the singlechip, and the amplified voltage signal is acquired by the singlechip. And the serial port interface of the singlechip is connected with a computer through a TTL-to-USB connector, data acquired by the singlechip is sent to a matlab serial port end of the computer through serial port communication, and data received by the matlab serial port end is processed by adopting a time-sharing mode isolation measurement algorithm, so that physical quantity information of two modes of force and magnetism can be obtained.
When the magnetism is measured, the contact force of the sensor array is kept unchanged, the distribution condition of surrounding magnetic fields is changed, the output voltage signals of the sensors are changed, the output voltage signals are amplified by the amplifying circuit, the amplified signals are collected by the singlechip and transmitted to the matlab serial port end of the computer, and the distribution information of the magnetic fields can be obtained by processing data by adopting a time-sharing mode isolation measurement algorithm.
When the contact force is measured, the magnetic field distribution around the sensor array is kept unchanged, the size and distribution of the contact force to the sensor array are changed, the output voltage signal of the sensor is changed, the amplified output voltage signal is amplified by an amplifying circuit, the amplified signal is collected by a singlechip and transmitted to a matlab serial port end of a computer, and the data is processed by adopting a time-sharing modal isolation measurement algorithm, so that the size and distribution information of the contact force can be obtained.
The protocols or software involved in the present invention are all well known.
And (3) respectively carrying out magnetization curve test on the magnetostrictive film electrodeposited under the induced magnetic field of 50kA/m and the magnetostrictive film electrodeposited under the non-induced magnetic field by vibrating the sample magnetometer VSM, and processing test data to obtain a magnetization curve comparison graph of the magnetostrictive film electrodeposited under the induced magnetic field of 50kA/m and the non-induced magnetic field shown in FIG. 7 (a). When the size of the externally applied magnetic field is 500kA/m, the saturated magnetic induction intensity of the magnetostrictive film obtained by electro-deposition under the condition of not adopting an induced magnetic field is 4.09kA/m, and the saturated magnetic induction intensity of the magnetostrictive film prepared by adopting the electro-deposition method under the condition of adopting the induced magnetic field of 50kA/m can reach 8.9kA/m. The magnetostrictive film obtained by electrodeposition under the induced magnetic field of 50kA/m has higher magnetization degree when influenced by the magnetic field than the magnetostrictive film prepared without the induced magnetic field, is more sensitive to the change of the external magnetic field and can generate larger size change response.
A multi-parameter magnetic measurement system WK-22 is adopted, a sample is fixed on a strain gauge of the test system, the sample is placed in a magnetic field space generated by a direct current magnetic field steady-flow power supply, and a strain signal is recorded by changing the size of a direct current magnetic field. The obtained data are processed to obtain fig. 7 (b) and 7 (c). FIG. 7 (b) is a graph showing the comparison of magnetostriction rate curves of magnetostrictive films prepared at 50kA/m of induced magnetic field and no induced magnetic field. When the external magnetic field is 15kA/m, the magnetostriction rate of the magnetostrictive film obtained by electrodeposition under the condition of not adopting an induced magnetic field is 65.4ppm, and the magnetostriction rate of the magnetostrictive film prepared by the electrodeposition method under the induced magnetic field of 50kA/m can reach 80.2ppm. The magnetostriction film prepared under the induced magnetic field has larger magnetostriction rate under different magnetic field environments than the magnetostriction film prepared under the non-induced magnetic field, and the sensitivity degree of the magnetostriction film to the magnetic field is higher. FIG. 7 (c) is a graph showing the comparison of the magnetostriction film prepared under an induced magnetic field and a magnetostriction film prepared without an induced magnetic field, wherein the magnetostriction film prepared by electrodeposition under an induced magnetic field is 6.1nm/A and the magnetostriction film prepared by electrodeposition under an induced magnetic field of 50kA/m is 7.8nm/A when the applied magnetic field is 50 kA/m. Compared with the magnetostrictive film prepared under the non-induced magnetic field, the magnetostrictive film prepared under the induced magnetic field has larger piezomagnetic coefficient under different magnetic field environments, and the magnetostrictive material with larger piezomagnetic coefficient has the advantages of high-precision measurement, high-sensitivity control and quick response.
From the graph of fig. 7, it can be seen that the magnetostrictive film prepared by the electrodeposition preparation method under induced magnetic field has higher sensitivity to magnetic field, which is helpful for improving the performance of the force-magnetic bimodal sensor array.
The invention is not a matter of the known technology.
Claims (5)
1. A flexible force magnetic bimodal sensor array characterized in that the sensor array comprises: rectangular conductive copper sheets are distributed on the upper surface matrix of the conversion layer, and one side of each rectangular conductive copper sheet is provided with a strip-shaped conductive copper sheet with the same width; the magnetostriction film is attached to the rectangular conductive copper sheet; the piezoelectric film force sensitive layer covers the flexible circuit board conversion layer, and the front part of the piezoelectric film force sensitive layer above the strip-shaped conductive copper sheet is a blank area cut and hollowed out; the conductive thin layer units distributed in a matrix are distributed on the piezoelectric thin film power sensitive layer and the hollowed-out area, and the projection position of each conductive thin layer unit is overlapped with the positions of a group of rectangular conductive copper sheets, a blank area and a strip-shaped conductive copper sheet;
the number of the rectangular conductive copper sheets and the conductive thin layer units is 9, and the rectangular conductive copper sheets and the conductive thin layer units form an array of 3*3.
2. The flexible force magnetic bimodal sensor array of claim 1 wherein said rectangle is square with sides of 5-10 mm; the distance between the adjacent square conductive copper sheets is 4-5 mm, and the distance between each square conductive copper sheet and the corresponding strip-shaped conductive copper sheet is 1-2 mm.
3. The flexible force magnetic bimodal sensor array of claim 1 wherein said conductive thin layer is a conductive silver paste, silver or copper conductive tape; the thickness range is 1-1000 micrometers;
the piezoelectric film sensitive layer is made of P (VDF-TrFE); the thickness range is 1-100 micrometers;
the magnetostrictive film material is Fe-Co, fe-Ni, fe-Ga or Terfenol; the thickness range is 1-100 micrometers;
the conversion layer is a flexible circuit board;
the square conductive copper sheet has the thickness of 50-200 micrometers and the side length of 5-10 mm;
the strip-shaped conductive copper sheet has the thickness of 50-200 micrometers and the width of 1-3 mm.
4. The method for manufacturing a flexible force magnetic bimodal sensor array as claimed in claim 1, comprising the steps of:
(1) Preparing a Co-Fe magnetostrictive film by adopting an electro-deposition method under an induced magnetic field:
the strip-shaped conductive copper sheet on the flexible circuit board is pasted and sealed by an electroplating adhesive tape, the flexible circuit board and the square conductive copper sheet on the flexible circuit board are pickled and then used as a cathode, a platinum plate is used as an anode, a Co-Fe alloy electrodeposition solution is used as an electrolyte, the two electrode plates are vertically and mutually parallel and are placed in the electrolyte, the pH value of the electrolyte is controlled to be 2.5-3.5 by dropwise adding a dilute sulfuric acid solution in a direct current magnetic field environment and a direct current power supply, the flexible circuit board is taken out after the deposition is finished, is cleaned by alcohol, and is then air-dried, so that 9 magnetostrictive films deposited on the flexible circuit board are obtained;
the composition of the electrodeposition solution comprises iron sulfate, cobalt sulfate, complexing agent, buffering agent, antioxidant and surface brightening agent, and the concentration of the electrodeposition solution is FeSO 4 ·7H 2 O 0.01～0.1mol/L，CoSO 4 ·7H 2 0.1 to 0.5mol/L of O, 0.2 to 0.5mol/L of sodium citrate, 0.2 to 0.3mol/L of boric acid, 0.5 to 2g/L of ascorbic acid, 1 to 3g/L of saccharin and 0.01 to 0.05g/L of sodium dodecyl sulfate;
the magnetic field value is as follows: 50-500 kA/m; the current is controlled to be 0.30-0.40A/cm 2 The pH value of the electrolyte is controlled to be 2.5-3.5 by dripping dilute sulfuric acid solution, and the electrodeposition time is 20-100 min;
(2) P (VDF-TrFE) piezoelectric film was prepared by spin coating:
placing the flexible circuit board with the deposited Co-Fe film as a substrate on a spin coater, spin-coating a P (VDF-TrFE) solution, and annealing at 120-140 ℃ for 3.5-4.5 hours; finally, placing the piezoelectric film into field intensity of 125-130 MV/m for polarization for 25-35 minutes to obtain a piezoelectric film;
wherein, the solvent of the P (VDF-TrFE) solution is DMF, and the concentration is 5-20 g/100ml;
(3) Preparing a conductive thin layer by adopting an electroless plating method:
cutting a P (VDF-TrFE) piezoelectric film above the strip-shaped conductive copper sheet on the flexible circuit board to expose the strip-shaped conductive copper sheet, placing a silica gel mold on the flexible circuit board, enabling nine hollowed-out parts of the silica gel mold to be opposite to nine rectangular parts formed by the square conductive copper sheet 5 and the strip-shaped conductive copper sheet, clamping the silica gel mold and the flexible circuit board by two hard clamps, keeping the rectangular hollowed-out parts of the hard clamps corresponding to hollowed-out parts of the silica gel mold 9, and clamping by screws to form 9 groove-shaped containers; adding stannous sulfate serving as a sensitizer into the nine groove-shaped containers, then dripping silver plating solution into the 9 groove-shaped containers at normal temperature, growing for 10-15 minutes, and then cleaning the silver plating solution; and repeatedly dripping silver plating solution, growing and cleaning for 1-3 times to obtain nine conductive films with the thickness of 30-60 micrometers made of silver materials.
5. The method for manufacturing the flexible force magnetic bimodal sensor array according to claim 4, wherein the rotating speed of the spin coater in the step (2) is 1000-2000 r/min, and spin coating is repeated for 3-10 times, and each time of spin coating is performed for 60-120 seconds.
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