CN117269190A - Wafer defect optical detection system - Google Patents

Wafer defect optical detection system Download PDF

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Publication number
CN117269190A
CN117269190A CN202311114343.6A CN202311114343A CN117269190A CN 117269190 A CN117269190 A CN 117269190A CN 202311114343 A CN202311114343 A CN 202311114343A CN 117269190 A CN117269190 A CN 117269190A
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CN
China
Prior art keywords
light
imaging
wafer
imaging device
scattered light
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Pending
Application number
CN202311114343.6A
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Chinese (zh)
Inventor
张国栋
白丽园
蒋健君
史晋峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Opputoko Microelectronics Technology Co ltd
Original Assignee
Dongfang Jingyuan Electron Ltd
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Filing date
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Application filed by Dongfang Jingyuan Electron Ltd filed Critical Dongfang Jingyuan Electron Ltd
Priority to CN202311114343.6A priority Critical patent/CN117269190A/en
Publication of CN117269190A publication Critical patent/CN117269190A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B15/00—Special procedures for taking photographs; Apparatus therefor
    • G03B15/02—Illuminating scene
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/49—Scattering, i.e. diffuse reflection within a body or fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4735—Solid samples, e.g. paper, glass

Abstract

The application provides an optical wafer defect detection system, which comprises a light emitting device, a first imaging device (3) and a second imaging device (4); the light emitting device is used for injecting incident light to the surface of the wafer (9); the first imaging device (3) is used for receiving reflected light or scattered light of incident light through the wafer (9) to image; the second imaging device (4) is used for receiving scattered light of the incident light through the wafer (9) for imaging. The imaging devices are used for imaging based on reflected light or scattered light of the incident light so as to screen out clear images or perform three-dimensional imaging based on a plurality of images to identify more defects, so that the defect detection rate of the detection system can be improved.

Description

Wafer defect optical detection system
Technical Field
The application relates to the technical field of optical microscopes, in particular to an optical detection system for wafer defects.
Background
Wafers are integrated circuit products with specific electrical functions by fabricating various micro circuit structures on silicon wafers. The wafer defect detection is to detect whether defects such as grooves, particles, scratches and the like exist in a wafer or not, record the positions of the defects and display the images; wafer defect detection equipment and techniques are widely used in various links of wafer sheet manufacture and patterned wafer manufacture.
The wafer defect optical detection device has the advantage of high detection rate, and is widely applied to wafer defect detection. However, in the existing wafer defect optical detection device, single-channel light illumination and light receiving are basically adopted, so that the light receiving angle of the detector is smaller, the wafer defect identification capability is lower, namely the defect detection rate of the existing wafer defect optical detection device to the wafer is lower, and the application of the wafer defect optical detection device is limited.
Disclosure of Invention
The application provides an objective lens, an optical module and an optical system, which are used for solving the technical problem of lower defect detection rate of a wafer in the prior art.
The application provides an optical detection system for wafer defects, which comprises a light emitting device, a first imaging device and a second imaging device; the light emitting device is used for emitting incident light to the surface of the wafer; the first imaging device is used for receiving reflected light or scattered light of the incident light passing through the wafer to image; the second imaging device is used for receiving scattered light of the incident light passing through the wafer for imaging.
Optionally, the light emitting means comprises first light emitting means and/or second light emitting means; the first light emitting device is used for perpendicularly injecting first incident light into the surface of the wafer; the second light emitting device is used for obliquely injecting second incident light to the surface of the wafer; the first imaging device is used for receiving first incident light to image through first reflected light of the wafer or receiving second incident light to image through second scattered light of the wafer; the second imaging device is used for receiving the first incident light and imaging the first scattered light of the wafer or is used for receiving the second incident light and imaging the second scattered light of the wafer.
Optionally, the first light emitting device includes a first light source and a first light path module, and the first light path module includes a first shaper, a first polarizer and a first beam splitting component; the first light source is used for providing first incident light for the first light path module; the first shaper is used for modulating the first incident light into flat top light; the first polarizer is used for selecting the polarization state of the first incident light; the first beam splitting component is used for switching the first incident light to the bright field illumination light path.
Optionally, the second light emitting device includes a second light source and a second light path module, and the second light path module includes a second shaper, a second polarizer, and a beam splitter; the second light source is used for providing second incident light for the second light path module; the second shaper is used for modulating the second incident light into flat-top light; the second polarizer is used for selecting the polarization state of second incident light; the beam splitter is used for splitting the second incident light.
The optional second light emitting device further comprises a reflective component; the reflecting component is used for reflecting the second incident light to the surface of the wafer.
Optionally, the second optical path module further includes a scan generator; the scan generator is used for shifting the second incident light to scan the surface of the wafer.
Optionally, the second imaging device includes a second detector and a second imaging light path module; the second imaging light path module comprises a second cylindrical lens, a second analyzer and a second objective lens; the second detector is used for imaging based on the first scattered light or the second scattered light; the second objective lens is used for converging the first scattered light or the second scattered light; the second cylindrical lens is used for converging the first scattered light or the second scattered light on an imaging target surface of the second detector in cooperation with the second objective lens; the second analyzer is used for selecting the polarization state of the first scattered light or the second scattered light.
Optionally, the second imaging optical path module further includes a second filter and/or a second filter; the second filter is used for filtering noise of the first scattered light or the second scattered light; the second filter is used for screening the wavelength of the first scattered light or the second scattered light.
Optionally, the number of the second imaging devices is a plurality; the second imaging devices are distributed along the circumferential direction of the wafer, and the included angle of any two second imaging devices in the circumferential direction is less than 180 degrees.
Optionally, the light receiving angles of the two adjacent second imaging devices are different.
Optionally, the first imaging device includes a first detector and a first imaging light path module; the first imaging light path module comprises a first cylindrical lens, a first analyzer and a first objective lens; the first detector is used for imaging based on the first reflected light or the second scattered light; the first objective lens is used for converging the first reflected light or the second scattered light; the first cylindrical lens is used for converging the first reflected light or the second scattered light on an imaging target surface of the first detector in cooperation with the first objective lens.
Optionally, the first imaging optical path module further includes a first filter and/or a first filter; the first filter is used for filtering noise of the first reflected light or the second scattered light; the first filter is used for screening the wavelength of the first reflected light or the second scattered light.
Optionally, the wafer defect optical detection system further includes a detection platform and a first driving component; the detection platform is used for placing a wafer; the first power component is connected with the detection platform and used for controlling the detection platform to move in a circumferential plane.
Optionally, the wafer defect optical detection system further comprises an industrial personal computer; the industrial personal computer comprises a second beam splitting component, an automatic focusing module and a second driving component; the second beam splitting component is arranged on an imaging light path of the first imaging device and is used for switching the first reflected light or the second scattered light to the automatic focusing module; the automatic focusing module is used for imaging based on the first reflected light or the second scattered light, generating an analysis result based on the imaged image, and controlling the second driving component based on the analysis result; the second driving part is connected with the first imaging device and is used for driving the first imaging device to move along the axial direction of the first imaging device.
Optionally, the wafer defect optical detection system further comprises a computer and a server; the computer is respectively communicated with the first imaging device, the second imaging device, the scanning generator, the detection platform, the industrial personal computer and the server, and is used for acquiring imaging information of the first imaging device and the second imaging device, controlling the scanning generator to be matched with the detection platform to scan a wafer and controlling the industrial personal computer to focus the first imaging device in real time; the server is used for processing and storing imaging information.
In summary, the wafer defect optical detection system provided by the present application has at least the following beneficial effects:
the application provides an optical detection system for wafer defects, which comprises a light emitting device, a first imaging device and a second imaging device; the light emitting device is used for emitting incident light to the surface of the wafer; the first imaging device is used for receiving reflected light or scattered light of the incident light passing through the wafer to image; the second imaging device is used for receiving scattered light of the incident light passing through the wafer for imaging. The imaging devices are used for imaging based on reflected light or scattered light of the incident light so as to screen out clear images or perform three-dimensional imaging based on a plurality of images to identify more defects, so that the defect detection rate of the detection system can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a wafer defect optical inspection system according to an embodiment of the present application;
FIG. 2 is a top view of a detector arrangement of a wafer defect optical inspection system according to an embodiment of the present application;
FIG. 3 is a block diagram of a wafer defect optical inspection system according to an embodiment of the present application;
FIG. 4 is a block diagram of a wafer defect optical inspection system according to an embodiment of the present application;
the reference numerals are as follows:
1. a first light emitting device; 10. a first light source; 11. a first optical path module; 110. a first shaper; 111. a first polarizer; 112. a first beam splitting part;
2. a second light emitting device; 20. a second light source; 21. a second optical path module; 210. a second shaper; 211. a second polarizer; 212. a beam splitter; 213. a reflecting member; 214. a scan generator;
3. a first imaging device; 30. a first detector; 31. a first imaging light path module; 310. a first barrel mirror; 311. a first analyzer; 312. a first objective lens; 313. a first filter and/or a first filter;
4. a second imaging device; 40. a second detector; 41. a second imaging light path module; 410. a second barrel mirror; a 411 second analyzer; 412 a second objective lens; 413. a second filter and/or a second filter;
51. a detection platform;
6. an industrial personal computer; 61. a second beam splitting part; 62. an automatic focusing module;
7. a computer;
8. a server;
9. and (3) a wafer.
Detailed Description
In the description of the present application, it should be understood that, if there are descriptions of terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating orientation or positional relationship, it should be understood that the orientation or positional relationship shown based on the drawings is merely for convenience of description and simplification of the description, and does not indicate or imply that the apparatus or element in question must have a specific orientation, be configured and operated in a specific orientation, and should not be construed as limiting the present application.
Furthermore, the presence of features defining "first" and "second" for descriptive purposes only, should not be interpreted as indicating or implying a relative importance or implicitly indicating the number of features indicated. Features defining "first", "second" may include at least one such defined feature, either explicitly or implicitly. If a description of "a plurality" is present, the generic meaning includes at least two, e.g., two, three, etc., unless specifically defined otherwise.
In this application, unless explicitly stated or limited otherwise, terms such as "mounted," "connected," "secured," and the like, are to be construed broadly. For example, the two parts can be fixedly connected, detachably connected or integrated; the connection may be mechanical connection, electrical connection, direct connection, indirect connection through an intermediate medium, communication between two elements or interaction relationship between two elements. The specific meaning of the terms in the present application can be understood by those skilled in the art according to the specific circumstances.
In the description of the present specification, the terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., as used herein, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
The application provides an optical detection system for wafer defects, which comprises a light emitting device, a first imaging device 3 and a second imaging device 4;
a light emitting device for emitting incident light to the surface of the wafer 9;
a first imaging device 3 for receiving reflected light or scattered light of the incident light through the wafer 9 to image;
the second imaging device 4 is used for receiving scattered light of the incident light passing through the wafer 9 for imaging.
The incident light of the light emitting device can be vertically or obliquely directed to the surface of the wafer 9, and the plurality of imaging devices (including the first imaging device 3 and the second imaging device 4) can image based on the reflected light or scattered light of the incident light, so as to screen out clear images or perform three-dimensional imaging based on a plurality of images, so as to identify more defects, thereby improving the defect detection rate of the detection system.
Referring to fig. 1, in some embodiments of the present application,
the light emitting means comprise a first light emitting means 1 and/or a second light emitting means 2; the first light emitting device 1 is used for perpendicularly injecting first incident light into the surface of the wafer 9; the second light emitting device 2 is used for obliquely injecting second incident light to the surface of the wafer 9; the first imaging device 3 is configured to receive a first incident light and image the first reflected light of the wafer 9 or to receive a second incident light and image the second scattered light of the wafer 9; the second imaging device 4 is used for imaging through the first scattered light of the wafer 9 by receiving the first incident light or for imaging through the second scattered light of the wafer 9 by receiving the second incident light.
In this embodiment, the light emitting device may include a first light emitting device 1 and a second light emitting device 2, where the first light emitting device 1 is configured to direct a first incident light perpendicularly to a surface of the wafer 9, and the second light emitting device 2 is configured to direct a second incident light obliquely to the surface of the wafer 9. The detection system can support a plurality of illumination modes, namely a oblique incidence dark field mode, a double light source bright-dark field compatible mode and a Shan Guangyuan bright-dark field compatible mode.
The oblique incidence dark field mode is that illumination is only provided by the oblique incidence second light emitting device 2, and the plurality of imaging devices are dark field imaging devices and are used for collecting second scattered light from different angles for imaging, so that a plurality of dark field images are obtained. The dual-light-source bright-dark-field compatible mode is that illumination is provided by the first light emitting device 1 which is vertically incident and the second light emitting device 2 which is obliquely incident, and the wavelength of the first incident light and the wavelength of the second incident light can be different, at this time, the first imaging device 3 can receive the first incident light to image through the first reflected light of the wafer 9, and the second imaging device 4 can receive the second incident light to image through the second scattered light of the wafer 9, so as to obtain a plurality Zhang Mingchang of images and/or dark-field images. Shan Guangyuan the dark field compatible mode is illumination provided by the first light emitting device 1, and at this time, the first imaging device 3 can receive the first incident light and image the first reflected light of the wafer 9, and the second imaging device 4 can receive the first incident light and image the first scattered light of the wafer 9, so as to obtain Zhang Mingchang more and/or dark field images.
In summary, the inspection system provided in this embodiment supports multiple illumination modes, and can be freely switched or fixed to one of the illumination modes, so that multiple Zhang Mingchang and/or dark field images for the inspection area of the wafer 9 can be obtained, and clear images can be conveniently screened or stereoscopic imaging can be conveniently performed, so as to improve the defect detection rate of the inspection system.
In some embodiments of the present application,
the first light emitting device 1 includes a first light source 10 and a first light path module 11, the first light path module 11 including a first shaper 110, a first polarizer 111, and a first beam splitting part 112; the first light source 10 is configured to provide a first incident light to the first light path module 11; the first shaper 110 is configured to modulate the first incident light into flat top light; the first polarizer 111 is used for selecting the polarization state of the first incident light; the first beam splitting part 112 is used for switching the first incident light to the bright field illumination light path.
The first light source 10 includes, but is not limited to, a laser, and may be a xenon lamp, a mercury lamp, an LED, or the like. The first shaper 110 can condition the first incident light into flat top light with uniform energy distribution, so as to reduce uncertainty caused by a light source in the detection process, improve the detection accuracy, i.e. improve the detection rate of defects. Further, the bright-field illumination optical path refers to a bright-field imaging optical path corresponding to the first imaging device 3, and since the first incident light is perpendicularly taken on the surface of the wafer 9, the bright-field illumination optical path coincides with the imaging optical path of the first imaging device 3. In some embodiments, the first Beam splitting component 112 may be a Beam splitter 212 (BS), a half mirror, or a half mirror to switch the first incident light to the bright field illumination light path and allow a portion of the first reflected light to be transmitted, facilitating imaging by the first imaging device 3 based on the first reflected light.
In some embodiments of the present application,
the second light emitting device 2 includes a second light source 20 and a second light path module 21, and the second light path module 21 includes a second shaper 210, a second polarizer 211, and a beam splitter 212; the second light source 20 is configured to provide a second incident light to the second light path module 21; the second shaper 210 is configured to modulate the second incident light into a flat-top light; the second polarizer 211 is used to select the polarization state of the second incident light; the beam splitter 212 is used to split the second incident light.
The second light source 20 includes, but is not limited to, a laser, and may be a xenon lamp, a mercury lamp, an LED, or the like. The second shaper 210 can condition the second incident light into flat top light with uniform energy distribution, so as to reduce uncertainty caused by the light source in the detection process and improve the detection accuracy. In addition, the beam splitter 212 may be a diffraction laser beam splitter 212, and may divide the second incident light into a plurality of incident lights with uniformly distributed light intensities based on a diffraction principle, and form well focused light spots at specific distances through a focusing lens, where the shape of the light spots may be a one-dimensional lattice, a two-dimensional lattice, a discrete lattice, a single-line type, a double-line type, a grid type, or the like. In addition, the beam splitter 212 may be a cylindrical lens, so as to modulate the second incident light into a stripe-shaped light spot, thereby increasing the scanning range of the surface of the wafer 9 where the second incident light is incident and improving the scanning detection rate. It should be noted that this application only lists some ways of achieving beam splitting, and it should be understood that other ways of achieving beam splitting are also within the scope of the present application without departing from the spirit of the present application.
In some embodiments of the present application, the second light emitting device 2 further comprises a reflecting member 213, the reflecting member 213 being configured to reflect the second incident light to the surface of the wafer 9.
The reflecting component 213 may be an adjustable component, that is, by adjusting the reflecting component 213, the incident angle of the second incident light may be changed, so that the image formed by the first imaging device 3 and/or the second imaging device 4 is clearer, and the recognition capability of the inspection system and the adaptability to the inspection of the wafer 9 are improved. The incident angle of the second incident light is the incident angle of the second incident light having the surface of the wafer 9 as a reflection surface.
In some embodiments of the present application, the second optical path module 21 further includes a scan generator 214. The scan generator 214 is configured to shift the second incident light to scan the surface of the wafer 9.
The scan generator 214 may change the position of the second incident light entering the surface of the wafer 9 by driving the second light path module 21 to translate or deflect, so as to scan the surface of the wafer 9, and cooperate with multi-channel image acquisition to realize high-throughput detection, thereby improving the defect detection rate and the detection rate. It should be noted that, the present application only lists some ways in which the scan generator 214 controls to shift the second incident light, and it should be understood that other ways of shifting the second incident light are also within the scope of the present application.
In some embodiments of the present application,
the second imaging device 4 includes a second detector 40 and a second imaging optical path module 41; the second imaging optical path module 41 includes a second cylindrical lens 410, a second analyzer 411, and a second objective lens 412; the second detector 40 is used for imaging based on the first scattered light or the second scattered light; the second objective lens 412 is configured to converge the first scattered light or the second scattered light; the second cylindrical lens 410 is configured to cooperate with the second objective lens 412 to converge the first scattered light or the second scattered light on the imaging target surface of the second detector 40; the second analyzer 411 is used to select the polarization state of the first scattered light or the second scattered light.
The second detector 40 may be a CCD camera, a CMOS camera, a TDI camera, a PMT camera, or any other optical signal detector. In addition, the second analyzer 411 may be matched with the first polarizer 111 or the second polarizer 211 to select the polarization states of the first scattered light or the second scattered light, especially if the second imaging device 4 is multiple, the polarization states screened by the second analyzers 411 may also be different, so that multiple different images can be obtained for the scanning position of the surface of the wafer 9, so as to facilitate identifying more defects and improve the defect detection rate of the wafer 9.
In some embodiments of the present application, the second imaging optical path module 41 further includes a second filter and/or a second filter 413; the second filter is used for filtering noise of the first scattered light or the second scattered light; the second filter is used for screening the wavelength of the first scattered light or the second scattered light.
The second filter can be matched with the second filter to select scattered light with a single wavelength for imaging, and further, a clearer image can be obtained under the matching of the analyzer and the polarizer, so that the defect of the wafer 9 can be conveniently identified. In addition, the second filter in the present application can filter the noise of the first scattered light or the second scattered light, and also can screen the scattered light with a specific wavelength band, so as to facilitate selection of the incident light, for example, when the wavelength bands of the first incident light and the second incident light are different, the second filter can select to pass the first incident light or the second incident light, so as to obtain different images of the scanning positions of the wafer 9.
In some embodiments of the present application, referring to fig. 1 and 2, the number of the second imaging devices 4 is plural; the second imaging devices 4 are arranged in a dispersed manner along the circumferential direction of the wafer 9, and an included angle between any two second imaging devices 4 in the circumferential direction is less than 180 degrees.
The included angle of any two second imaging devices 4 in the circumferential direction is below 180 degrees, and it is understood that the projection of scattered light received by any two second imaging devices 4 in the same circumferential section is below 180 degrees, so that the plurality of second imaging devices 4 can be ensured to be sufficiently dispersed in the circumferential direction of the wafer 9, scattered light is collected at multiple angles for imaging, different images of scanning positions of the wafer 9 are obtained, clear images are conveniently obtained, three-dimensional imaging is conveniently carried out, and the detection rate of defects of the wafer 9 is improved. In some embodiments, the light receiving angles of the plurality of second imaging devices 4 can be freely adjusted, and when the light receiving angles of two adjacent second imaging devices 4 are adjusted to be different, a difference between the images formed by the plurality of second imaging devices 4 can be further ensured, so that the images can be conveniently screened or three-dimensional stereo imaging can be conveniently performed.
In some embodiments of the present application, the first imaging device 3 includes a first detector 30 and a first imaging optical path module 31; the first imaging optical path module 31 includes a first barrel lens 310, a first analyzer 311, and a first objective lens 312; the first detector 30 is for imaging based on the first reflected light or the second scattered light; the first objective lens 312 is used for converging the first reflected light or the second scattered light; the first cylindrical lens 310 is used to combine with the first objective lens 312 to focus the first reflected light or the second scattered light on the imaging target surface of the first detector 30.
The first detector 30 may be a CCD camera, a CMOS camera, a TDI camera, a PMT camera, or any other optical signal detector. In addition, the first analyzer 311 may cooperate with the first polarizer 111 or the second polarizer 211 to select the polarization state of the first reflected light or the second scattered light, especially, in the oblique incidence dark field mode, the first imaging device 3 is used as a dark field imaging device, and the first analyzer 311 may cooperate with the second analyzer 411 to screen the second scattered light with different polarization states, so as to obtain a plurality of different images on the scanning position of the surface of the wafer 9, thereby facilitating to identify more defects and improving the defect detection rate of the wafer 9.
In some embodiments of the present application, the first imaging optical path module 31 further includes a first filter and/or a first filter 313; the first filter is used for filtering noise of the first reflected light or the second scattered light; the first filter is used for screening the wavelength of the first reflected light or the second scattered light.
The first filter can be matched with the first filter to select scattered light with a single wavelength for imaging, and further, under the matching of the analyzer and the polarizer, a clearer image can be obtained, so that the defect of the wafer 9 can be conveniently identified. In addition, the first filter in the present application may filter noise of the first reflected light or the second scattered light, and also may screen reflected light or scattered light in a specific wavelength band, so as to facilitate selection of the incident light, for example, when the wavelength band of the first incident light is different from that of the second incident light, the first filter may select to pass the first incident light or the second incident light, so as to obtain different images of the scanning position of the wafer 9.
In some embodiments of the present application,
the wafer defect optical inspection system further includes an inspection stage 51 and a first driving part; the detecting platform 51 is used for placing the wafer 9; the first power component is connected with the detection platform 51 and is used for controlling the detection platform 51 to move in a circumferential plane.
In the case where the first incident light is perpendicularly incident on the surface of the wafer 9, the detection platform 51 is located at a horizontal plane perpendicular to the first incident light, so that the circumferential plane in this embodiment can be understood as a horizontal plane (XY plane), and the detection platform 51 moves in the XY plane to cooperate with the second incident light to move and scan in the XY plane, so that high flux detection can be further realized, and the detection rate of the detection system can be improved.
In some embodiments of the present application, as shown in figure 3,
the wafer defect optical detection system also comprises an industrial personal computer 6; the industrial personal computer 6 comprises a second beam splitting component 61, an automatic focusing module 62 and a second driving component; the second beam splitting component 61 is disposed on an imaging optical path of the first imaging device 3, and is configured to switch the first reflected light or the second scattered light to the auto-focusing module 62; the auto-focusing module 62 is configured to image based on the first reflected light or the second scattered light, generate an analysis result based on the imaged image, and control the second driving section based on the analysis result; the second driving means is connected to the first imaging device 3 for driving the first imaging device 3 in its axial movement.
The second Beam splitter 61 may be a Beam splitter 212 (BS), a half mirror, or a half mirror, so that the first imaging device 3 may perform imaging based on the first reflected light or the second scattered light when the first reflected light or the second scattered light is switched to the autofocus module 62. In addition, in the case where the inspection stage 51 is disposed on the horizontal plane (XY plane), the axial movement of the first imaging device 3 is understood to mean that the first imaging device 3 can move in the Z direction (vertical direction) in real time, and focusing is performed in real time, so as to ensure the imaging quality of the first imaging device 3 and improve the defect detection rate of the inspection device.
In some embodiments of the present application, as shown in figure 4,
the wafer defect optical detection system also comprises a computer 7 and a server 8; the computer 7 is respectively communicated with the first imaging device 3, the second imaging device 4, the scanning generator 214, the industrial personal computer 6 and the server 8, and is used for acquiring imaging information of the first imaging device 3 and the second imaging device 4, controlling the scanning generator 214 to cooperate with the detection platform 51 to scan the wafer 9 and controlling the industrial personal computer 6 to focus the first imaging device 3 in real time; the server 8 is used to process and store imaging information.
The technical features described above may be arbitrarily combined. Although not all possible combinations of features are described, any combination of features should be considered to be covered by the description provided that such combinations are not inconsistent.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims (15)

1. An optical inspection system for wafer defects, comprising a light emitting device, a first imaging device (3) and a second imaging device (4);
the light emitting device is used for emitting incident light to the surface of the wafer (9);
the first imaging device (3) is used for receiving the reflected light or scattered light of the incident light through the wafer (9) for imaging;
the second imaging device (4) is used for receiving scattered light of the incident light passing through the wafer (9) for imaging.
2. The optical inspection system of claim 1, wherein,
the light emitting means comprise a first light emitting means (1) and/or a second light emitting means (2);
the first light emitting device (1) is used for perpendicularly injecting first incident light to the surface of the wafer (9);
the second light emitting device (2) is used for obliquely injecting second incident light to the surface of the wafer (9);
the first imaging device (3) is used for receiving first reflected light of the first incident light through the wafer (9) for imaging or receiving second scattered light of the second incident light through the wafer (9) for imaging;
the second imaging device (4) is used for receiving first scattered light of the first incident light through the wafer (9) for imaging or receiving second scattered light of the second incident light through the wafer (9) for imaging.
3. The optical inspection system of wafer defects as set forth in claim 2, wherein,
the first light emitting device (1) comprises a first light source (10) and a first light path module (11), and the first light path module (11) comprises a first shaper (110), a first polarizer (111) and a first beam splitting component (112);
the first light source (10) is used for providing first incident light to the first light path module (11);
the first shaper (110) for modulating the first incident light as flat top light;
-the first polarizer (111) is configured to select a polarization state of the first incident light;
the first beam splitting component (112) is configured to switch the first incident light to a bright field illumination light path.
4. The optical inspection system of wafer defects as set forth in claim 2, wherein,
the second light emitting device (2) comprises a second light source (20) and a second light path module (21), and the second light path module (21) comprises a second shaper (210), a second polarizer (211) and a beam splitter (212);
the second light source (20) is used for providing second incident light to the second light path module (21);
the second shaper (210) is configured to modulate the second incident light to a flat-top light;
-the second polarizer (211) is adapted to select a polarization state of the second incident light;
the beam splitter (212) is configured to split the second incident light.
5. The optical inspection system of claim 4, wherein,
the second light emitting device (2) further comprises a reflecting member (213);
the reflecting member (213) is configured to reflect the second incident light to the surface of the wafer (9).
6. The optical inspection system of claim 5, wherein,
the second light path module (21) further comprises a scanning generator (214);
the scan generator (214) is configured to shift the second incident light to scan the surface of the wafer (9).
7. The optical inspection system of wafer defects as set forth in claim 2, wherein,
the second imaging device (4) comprises a second detector (40) and a second imaging light path module (41); the second imaging light path module (41) comprises a second cylindrical lens (410), a second analyzer (411) and a second objective lens (412);
-the second detector (40) is for imaging based on the first scattered light or the second scattered light;
the second objective lens (412) is configured to converge the first scattered light or the second scattered light;
the second cylindrical lens (410) is used for converging the first scattered light or the second scattered light on an imaging target surface of the second detector (40) in cooperation with the second objective lens (412);
the second analyzer (411) is configured to select a polarization state of the first scattered light or the second scattered light.
8. The optical inspection system of claim 7, wherein,
the second imaging optical path module (41) further comprises a second filter and/or a second filter plate (413);
the second filter is used for filtering noise of the first scattered light or the second scattered light;
the second filter is used for screening the wavelength of the first scattered light or the second scattered light.
9. The optical inspection system of wafer defects as set forth in claim 2, wherein,
the number of the second imaging devices (4) is a plurality;
the second imaging devices (4) are arranged in a scattered manner along the circumferential direction of the wafer (9), and an included angle of any two second imaging devices (4) in the circumferential direction is less than 180 degrees.
10. The wafer defect optical inspection system according to claim 9, wherein the acceptance angles of adjacent two of the second imaging devices (4) are different.
11. The optical inspection system of wafer defects as set forth in claim 2, wherein,
the first imaging device (3) comprises a first detector (30) and a first imaging light path module (31); the first imaging light path module (31) comprises a first cylindrical lens (310), a first analyzer (311) and a first objective lens (312);
the first detector (30) is for imaging based on the first reflected light or the second scattered light;
the first objective lens (312) is used for converging the first reflected light or the second scattered light;
the first cylindrical lens (310) is used for converging the first reflected light or the second scattered light on an imaging target surface of the first detector (30) in cooperation with the first objective lens (312).
12. The optical inspection system of claim 11, wherein,
the first imaging optical path module (31) further comprises a first filter and/or a first filter (313);
the first filter is used for filtering noise of the first reflected light or the second scattered light;
the first filter is used for screening the wavelength of the first reflected light or the second scattered light.
13. The optical inspection system of claim 6, wherein,
the wafer defect optical inspection system further comprises an inspection platform (51) and a first driving component;
the detection platform (51) is used for placing the wafer (9);
the first power component is connected with the detection platform (51) and is used for controlling the detection platform (51) to move in the circumferential plane.
14. The optical inspection system of claim 13, wherein,
the wafer defect optical detection system further comprises an industrial personal computer (6);
the industrial personal computer (6) comprises a second beam splitting component (61), an automatic focusing module (62) and a second driving component;
the second beam splitting component (61) is arranged on an imaging light path of the first imaging device (3) and is used for switching the first reflected light or the second scattered light to the automatic focusing module (62);
the autofocus module (62) is configured to image based on the first reflected light or the second scattered light, generate an analysis result based on the imaged image, and control the second driving part based on the analysis result;
the second driving part is connected with the first imaging device (3) and is used for driving the first imaging device (3) to move along the axial direction of the first imaging device.
15. The optical inspection system of claim 14, wherein,
the wafer defect optical detection system also comprises a computer (7) and a server (8);
the computer (7) is respectively communicated with the first imaging device (3), the second imaging device (4), the scanning generator (214), the detection platform (51), the industrial personal computer (6) and the server (8) and is used for acquiring imaging information of the first imaging device (3) and/or the second imaging device (4), controlling the scanning generator (214) to scan the wafer (9) in cooperation with the detection platform (51) and controlling the industrial personal computer (6) to focus the first imaging device (3) in real time;
the server (8) is configured to process and store the imaging information.
CN202311114343.6A 2023-08-31 2023-08-31 Wafer defect optical detection system Pending CN117269190A (en)

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CN202311114343.6A CN117269190A (en) 2023-08-31 2023-08-31 Wafer defect optical detection system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311114343.6A CN117269190A (en) 2023-08-31 2023-08-31 Wafer defect optical detection system

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CN117269190A true CN117269190A (en) 2023-12-22

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