CN117254230A - X-band radio frequency front end three-dimensional integrated vertical interconnection structure - Google Patents
X-band radio frequency front end three-dimensional integrated vertical interconnection structure Download PDFInfo
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- CN117254230A CN117254230A CN202311314334.1A CN202311314334A CN117254230A CN 117254230 A CN117254230 A CN 117254230A CN 202311314334 A CN202311314334 A CN 202311314334A CN 117254230 A CN117254230 A CN 117254230A
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- radio frequency
- vertical
- upper substrate
- substrate
- solder balls
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- 239000010410 layer Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910000679 solder Inorganic materials 0.000 claims abstract description 34
- 230000007704 transition Effects 0.000 claims abstract description 34
- 239000011229 interlayer Substances 0.000 claims abstract description 17
- 230000008054 signal transmission Effects 0.000 claims abstract description 12
- 238000003780 insertion Methods 0.000 claims abstract description 9
- 230000037431 insertion Effects 0.000 claims abstract description 9
- 230000005570 vertical transmission Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 3
- 150000003624 transition metals Chemical class 0.000 claims abstract description 3
- 230000008093 supporting effect Effects 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 20
- 230000005540 biological transmission Effects 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/003—Coplanar lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/06—Coaxial lines
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a vertical interconnection structure for three-dimensional integration of an X-band radio frequency front end, and belongs to the technical field of radio frequency microwaves. The invention is mainly composed of an upper substrate, a lower substrate and BGA solder balls. The upper substrate and the lower substrate are made of high-frequency plate materials, and a plurality of BGA solder balls are welded between the layers. The BGA solder balls serve as interlayer transition to realize vertical signal transmission between the upper substrate and the lower substrate and provide support for the upper substrate and the lower substrate. The upper substrate is provided with an in-layer transition, and coplanar waveguides on the upper surface and the lower surface of the upper substrate are conducted through in-layer transition metal through holes, so that vertical transmission of signals between the upper surface and the lower surface of the upper substrate is realized. The vertical interconnection structure realizes the signal vertical transmission of the coplanar waveguide through intra-layer transition and inter-layer transition, reduces the return loss and the insertion loss of the front end of the radio frequency through the signal vertical short-distance transmission of the coplanar waveguide, and can also improve the integration level of the radio frequency circuit of the X wave band by adopting the three-dimensional integrated vertical interconnection structure.
Description
Technical Field
The invention relates to an X-band radio frequency front end three-dimensional integrated vertical interconnection structure, and belongs to the technical field of radio frequency microwaves.
Background
As a core component of the wireless communication module, the radio frequency front end has an important influence on the performance of the overall communication system. The radio frequency front end obtains a difference frequency signal carrying target distance and speed information mainly through transmitting and receiving radio frequency signals so as to be used for subsequent signal processing. With the rapid development of modern electronic technology and packaging interconnection technology, the rf front-end module needs to be miniaturized, lightweight, highly reliable, multifunctional, low-cost, and the like under the demands of the military and civil fields. In order to meet these requirements, a three-dimensional integration technology is required to replace the traditional two-dimensional plane integration technology in terms of circuit integration, and compared with the bottleneck problem existing in the case of two-dimensional integration in a micro system and high integration, the three-dimensional integration can achieve higher integration level and smaller packaging volume, improve the performance and reliability of the system, and simultaneously reduce the power consumption and the production cost.
A System In Package (SIP) is a three-dimensional integration of multiple chips, devices, modules, etc., and is packaged into a system or subsystem functional component with an individual function through a certain packaging process. The SIP technology can realize the stacked interconnection of a plurality of bare chips in the vertical direction through a selected plate in one package, greatly reduces the volume of the system, improves the reliability of the system, and is a very effective and common packaging mode in three-dimensional integration.
Disclosure of Invention
The key problem of how to realize the vertical interconnection of upper and lower layers of planar circuits in the SIP is that the whole system volume and performance are significantly affected. The invention aims to provide a three-dimensional integrated vertical interconnection structure of an X-band radio frequency front end, which adopts a Ball Grid Array (BGA) as the three-dimensional integrated vertical interconnection structure of the radio frequency front end, improves radio frequency transmission performance in an X-band, reduces return loss and insertion loss, and can also reduce the volume of the radio frequency front end and improve the integration level of an X-band radio frequency circuit by adopting the three-dimensional integrated vertical interconnection structure.
The invention aims at realizing the following technical scheme:
the invention discloses a vertical interconnection structure for three-dimensional integration of an X-band radio frequency front end, which mainly comprises an upper substrate, a lower substrate and BGA solder balls. The upper substrate and the lower substrate are made of high-frequency plate materials, and a plurality of BGA solder balls are welded between the layers. The BGA solder balls serve as interlayer transition to realize vertical signal transmission between the upper substrate and the lower substrate and provide support for the upper substrate and the lower substrate. The upper substrate is provided with an in-layer transition, and coplanar waveguides on the upper surface and the lower surface of the upper substrate are conducted through in-layer transition metal through holes, so that vertical transmission of signals between the upper surface and the lower surface of the upper substrate is realized. The vertical interconnection structure realizes the signal vertical transmission of the coplanar waveguide through the intra-layer transition and the inter-layer transition, reduces the return loss and the insertion loss of the radio frequency front end through the signal vertical short-distance transmission of the coplanar waveguide, and can also reduce the volume of the radio frequency front end and improve the integration level of the X-band radio frequency circuit by adopting the three-dimensional integrated vertical interconnection structure.
Further, the number of intra-layer transitions and the number of inter-layer transitions are determined according to the circuit layout of the X-band radio frequency front end.
Preferably, the upper substrate and the lower substrate are both made of Rogers4350B material.
Preferably, the interlayer transition adopts a BGA solder ball arrangement mode with a coaxial-like structure to carry out vertical signal transmission.
Preferably, the shielding solder balls adopt six solder balls and are arranged in a hexagonal form, so that the vertical signal transmission of the structure is more prone to a coaxial line form, and a better electromagnetic shielding effect can be achieved.
The beneficial effects are that:
1. the vertical interconnection structure realizes the signal vertical transmission of the coplanar waveguide through in-layer transition and interlayer transition, reduces the return loss and the insertion loss of the radio frequency front end through the signal vertical short-distance transmission of the coplanar waveguide, and can reduce the volume of the radio frequency front end and improve the integration level of the radio frequency circuit of the X wave band by adopting the three-dimensional integrated vertical interconnection structure.
2. The invention discloses a three-dimensional integrated vertical interconnection structure of an X-band radio frequency front end, which adopts a BGA solder ball arrangement mode of a coaxial-like structure, wherein the more the number of surrounding adjacent shielding solder balls is, the closer the distance is, the more the coaxial line tends to be, and the external shielding solder balls can guide an external electric field to the ground so as to prevent the external electric field from entering into the internal transmission solder balls and interfering with signal transmission, thereby playing a good electromagnetic shielding role, enabling circuit layers with different functions to have excellent isolation and good electromagnetic interference resistance.
3. The vertical interconnection structure for the three-dimensional integration of the X-band radio frequency front end has excellent return loss and insertion loss on the basis of realizing the beneficial effects 1 and 2, can be widely applied to the three-dimensional integration of the X-band radio frequency front end, reduces the volume of the radio frequency front end and improves the integration level of an X-band radio frequency circuit.
Drawings
FIG. 1 is a schematic diagram of an RF front-end circuit in the X-band according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a three-dimensional integrated vertical interconnection structure of an X-band RF front end in an embodiment of the present invention;
FIG. 3 is a diagram of an intra-layer transition structure in a vertical interconnect structure in accordance with an embodiment of the present invention;
FIG. 4 is a diagram illustrating an interlayer transition structure in a vertical interconnect in accordance with an embodiment of the present invention;
FIG. 5 is a schematic view of a three-layer board vertical interconnect structure in accordance with an embodiment of the present invention;
wherein: 1-in-layer transitions, 2-in-layer transitions, 3-antennas, 4-chips, 5-Rogers 4350B boards, 6-metallized vias, 7-coplanar waveguides, 8-transmission solder balls, 9-shielding solder balls.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples. The technical problems and the beneficial effects solved by the technical proposal of the invention are also described, and the described embodiment is only used for facilitating the understanding of the invention and does not have any limiting effect.
In the description of the present invention, it should be noted that the positional or positional relationship indicated by the terms such as "upper", "lower", "vertical", "inner", "intermediate", etc. are positional or positional relationships that are conventionally put in use of the inventive product, are merely for convenience in describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Example 1:
as shown in fig. 2, the three-dimensional integrated vertical interconnection structure of the X-band radio frequency front end disclosed in this embodiment mainly comprises an intra-layer transition 1, an inter-layer transition 2, an antenna 3, a chip 4 and a Rogers4350B board 5, and is applied to three-dimensional stacking between different board layers.
According to the principle diagram of the radio frequency front end 1, the radio frequency front end circuit is divided into different plate layers according to functions and is stacked in a three-dimensional mode. The first layer is an antenna layer; the second layer is a receiving and transmitting channel layer, and is mainly used for receiving and transmitting isolation, power amplification of a transmitting signal, low noise amplification of a receiving signal and signal mixing; the third layer is a small signal layer, and mainly completes the generation of a modulation signal, the filtering of a difference frequency signal and the automatic gain control.
Fig. 2 is a schematic diagram of a vertical interconnection structure implemented by BGA, showing the vertical interconnection between an antenna layer and a transceiver channel layer in this embodiment, where the vertical interconnection structure is mainly composed of upper and lower substrates and BGA solder balls, and each substrate adopts Rogers4350B board 5, and the dielectric constant of the board is 3.48, which has good radio frequency performance such as low radio frequency loss, low dielectric constant fluctuation with temperature, and low in-board expansion coefficient, and is particularly suitable for microwave and radio frequency applications. The lower layer Rogers4350B board 5 is provided with a radio frequency signal receiving and transmitting circuit composed of a chip 4, and the upper layer Rogers4350B board 5 is provided with an antenna 3. The interconnection structure has the advantages of high integration level, good consistency, short interconnection length and the like, can reduce the parasitic parameters of planar circuit area and vertical interconnection, effectively improves the circuit integration efficiency and improves the microwave interconnection performance. The signal transmission lines all adopt coplanar waveguide structures, and have good microwave transmission performance. From the schematic illustration, it can be seen that the vertical interconnect structure is mainly divided into two parts, namely an intra-layer transition 1 and an inter-layer transition 2.
For the in-layer transition 1 structure, as shown in fig. 3, the coplanar waveguide 7 on the upper and lower sides of the Rogers4350B plate 5 can be regarded as that signals are vertically transmitted through the in-layer metallized through holes 6, the thickness of the Rogers4350B plate 5 is 0.254mm, the dielectric constant is 3.48, the width of the strip line of the coplanar waveguide 7 is 0.4mm, the gap is 0.15mm, the characteristic impedance of the coplanar waveguide 7 is 50 ohms, and the radius of the in-layer interconnected metallized through holes 6 is 0.25mm. In the X wave band, the return loss is better than 37.5dB, and the insertion loss is better than 0.07dB.
For the interlayer transition 2 structure, as shown in fig. 4, considering that the radio frequency signal is transmitted, in order to ensure the radio frequency transmission performance, the transmission solder balls 8 and the four shielding solder balls 9 adopt an arrangement mode similar to a coaxial structure, so that a good electromagnetic shielding effect is achieved, and no obvious energy loss exists when the signal is transmitted from the lower layer Rogers4350B board 5 to the upper layer Rogers4350B board 5. In this structure, the radius of the transmission solder ball 8 and the shielding solder ball 9 is 0.35mm, the center distance is 1.3mm, and the height is 0.64mm. In the X wave band, the return loss is better than 24dB, and the insertion loss is better than 0.11dB.
Example 2:
as shown in fig. 5, the three-dimensional integrated three-layer board vertical interconnection structure of the front end of the X-band radio frequency disclosed in this embodiment mainly comprises a Rogers4350B board 5, a metallized through hole 6, a coplanar waveguide 7, a transmission solder ball 8 and a shielding solder ball 9. The embodiment mainly shows that the number of the intra-layer transition 1 and the number of the inter-layer transition 2 are determined according to the circuit layout of the radio frequency front end of the X-band, and is not limited, and two inter-layer transition 2 structures and one intra-layer transition 1 structure are adopted in the embodiment.
The three-layer vertical interconnection structure is shown in fig. 5, and mainly comprises three layers of substrates and BGA solder balls, wherein each layer of substrate is made of Rogers4350B board 5 material, the thickness of the substrate is 0.254mm, and the dielectric constant is 3.48. The BGA solder balls are welded between the layers to realize the vertical transmission of signals and the support of the two layers, the radius of the transmission solder balls 8 and the shielding solder balls 9 is 0.35mm, the center distance is 1.3mm, and the height of the solder balls is 0.64mm. The signal transmission lines are all of coplanar waveguide 7 structures, and have good microwave transmission performance, the width of the strip line of the coplanar waveguide 7 is 0.4mm, the gap is 0.15mm, and the characteristic impedance of the coplanar waveguide 7 is 50 ohms. The in-layer interconnect metallization via 6 has a radius of 0.25mm. In the X wave band, the return loss is better than 20dB, and the insertion loss is better than 0.2dB.
The shielding solder balls 9 are arranged in six and hexagonal forms, so that the vertical signal transmission of the structure is more towards the coaxial form, and a better electromagnetic shielding effect can be achieved.
The foregoing detailed description has set forth the objects, aspects and advantages of the invention in further detail, it should be understood that the foregoing description is only illustrative of the invention and is not intended to limit the scope of the invention, but is to be accorded the full scope of the invention as defined by the appended claims.
Claims (5)
1. The utility model provides a three-dimensional integrated vertical interconnection structure of X wave band radio frequency front end which characterized in that: the three-dimensional integrated vertical interconnection structure is mainly composed of an upper substrate, a lower substrate and BGA solder balls; the upper substrate and the lower substrate are made of high-frequency plate materials, and a plurality of BGA solder balls are welded between the layers; the BGA solder balls serve as interlayer transition to realize vertical signal transmission between the upper substrate and the lower substrate and provide supporting effect for the upper substrate and the lower substrate; the upper substrate is provided with an in-layer transition, and coplanar waveguides on the upper surface and the lower surface of the upper substrate are conducted through in-layer transition metal through holes, so that vertical transmission of signals between the upper surface and the lower surface of the upper substrate is realized; the vertical interconnection structure realizes the vertical signal transmission of the coplanar waveguide through intra-layer transition and inter-layer transition, and reduces the return loss and the insertion loss of the front end of the radio frequency through the vertical short-distance signal transmission of the coplanar waveguide.
2. The three-dimensional integrated vertical interconnect structure of an X-band rf front end of claim 1, wherein: the number of intra-layer transitions and the number of inter-layer transitions are determined according to the circuit layout of the X-band radio frequency front end.
3. A three-dimensional integrated vertical interconnect structure for an X-band rf front end as defined in claim 1 or 2, wherein: the upper substrate and the lower substrate are made of Rogers4350B material.
4. A three-dimensional integrated vertical interconnect structure for an X-band rf front end as defined in claim 1 or 2, wherein: and the interlayer transition adopts a BGA solder ball arrangement mode with a coaxial-like structure to carry out vertical signal transmission.
5. A three-dimensional integrated vertical interconnect structure for an X-band rf front end as defined in claim 1 or 2, wherein: the shielding solder balls are six solder balls and are arranged in a hexagonal form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311314334.1A CN117254230A (en) | 2023-10-11 | 2023-10-11 | X-band radio frequency front end three-dimensional integrated vertical interconnection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311314334.1A CN117254230A (en) | 2023-10-11 | 2023-10-11 | X-band radio frequency front end three-dimensional integrated vertical interconnection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117254230A true CN117254230A (en) | 2023-12-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311314334.1A Pending CN117254230A (en) | 2023-10-11 | 2023-10-11 | X-band radio frequency front end three-dimensional integrated vertical interconnection structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117254230A (en) |
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2023
- 2023-10-11 CN CN202311314334.1A patent/CN117254230A/en active Pending
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