CN117253911A - Metal laminate and method for forming metal laminate - Google Patents

Metal laminate and method for forming metal laminate Download PDF

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Publication number
CN117253911A
CN117253911A CN202311164719.4A CN202311164719A CN117253911A CN 117253911 A CN117253911 A CN 117253911A CN 202311164719 A CN202311164719 A CN 202311164719A CN 117253911 A CN117253911 A CN 117253911A
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metal
layer
nitride
forming
adhesion
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黄守林
曾海
郭晗
刘洲庠
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Hangzhou Fuxin Semiconductor Co Ltd
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Hangzhou Fuxin Semiconductor Co Ltd
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Priority to CN202311164719.4A priority Critical patent/CN117253911A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers

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  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The application provides a metal stack including a substrate, a first metal barrier layer, a second metal layer, and a second metal barrier layer. The first metal barrier layer is arranged on the substrate and comprises a first metal layer. The second metal layer is arranged on the first metal layer, and grows towards a specific crystal direction through the first metal layer. The second metal barrier layer is disposed on the second metal layer. By the arrangement of the first metal layer, the second metal layer grows towards a single specific crystal orientation, so that the flatness of the metal laminated layer is improved.

Description

Metal laminate and method for forming metal laminate
Technical Field
The present disclosure relates to the field of semiconductor technology, and more particularly, to a metal stack and a method for forming the metal stack.
Background
As semiconductor technology advances, the size of transistors has decreased, allowing integrated circuits to accommodate more transistors. At this time, the electrical connection requirements of the transistors are increasing, and how to connect a plurality of transistors by using a metal stack is becoming an important issue. Aluminum materials are the most commonly used metal conductive layers in integrated circuit metallization processes due to its good electrical conductivity, ease of deposition and etching, and other advantages.
Currently, aluminum-based metal stacks include two metal barrier layers and an aluminum layer disposed between the two metal barrier layers. However, due to the influence of the crystal structure of the metal barrier layer, the upper surface of the aluminum layer is rugged, so that the flatness of the metal lamination is reduced, the conductivity of the metal lamination is further influenced, and the subsequent etching process is further greatly influenced.
Disclosure of Invention
According to the foregoing, the present application provides a metal stack and a method for forming the metal stack, which solve the problem of uneven metal stack.
In view of the above, the present application provides a metal stack comprising a substrate, a first metal barrier layer, a second metal layer, and a second metal barrier layer. The first metal barrier layer is arranged on the substrate and comprises a first metal layer. The second metal layer is arranged on the first metal layer, and grows towards a specific crystal direction through the first metal layer. The second metal barrier layer is disposed on the second metal layer.
In embodiments of the present application, the first metal layer has a crystal orientation of [002], and the second metal layer has a specific crystal orientation of [111].
In an embodiment of the application, the first metal barrier layer includes a first metal adhesion layer and a first metal nitride layer, the first metal adhesion layer is disposed on the substrate, the first metal nitride layer is disposed on the first metal adhesion layer, and the first metal layer is disposed between the first metal nitride layer and the second metal layer.
In an embodiment of the application, the second metal barrier layer includes a second metal adhesion layer and a second metal nitride layer, the second metal adhesion layer is disposed on the second metal layer, the second metal nitride layer is disposed on the second metal adhesion layer, and the second metal layer is disposed between the first metal layer and the second metal adhesion layer.
In an embodiment of the present application, the material of the first metal adhesion layer, the material of the second metal adhesion layer, and the material of the first metal layer include titanium, the material of the first metal nitride layer and the material of the second metal nitride layer include titanium nitride, and the material of the second metal layer is copper-aluminum alloy.
In an embodiment of the present application, the material of the first metal adhesion layer, the material of the second metal adhesion layer, and the material of the first metal layer include tantalum, the material of the first metal nitride layer and the material of the second metal nitride layer include tantalum nitride, and the material of the second metal layer is copper-aluminum alloy.
Based on the above object, the present application provides a method for forming a metal stack, including: forming a first metal barrier layer on the substrate in the first process chamber, wherein the first metal barrier layer comprises a first metal layer; forming a second metal layer on the first metal layer in the second process chamber, wherein the second metal layer grows towards a specific crystal direction through the first metal layer; and forming a second metal barrier layer on the second metal layer in the third process chamber.
In embodiments of the present application, the first metal layer has a crystal orientation of [002], and the second metal layer has a specific crystal orientation of [111].
In an embodiment of the present application, forming a first metal barrier layer on the substrate within a first process chamber includes: forming a first metal adhesion layer on a substrate; forming a first metal nitride layer on the first metal adhesion layer; a first metal layer is formed on the first metal nitride layer, wherein the first metal layer is disposed between the first metal nitride layer and the second metal layer.
In an embodiment of the present application, forming a second metal barrier layer on the second metal layer in the third process chamber includes: forming a second metal adhesion layer on the second metal layer, wherein the second metal layer is arranged between the first metal layer and the second metal adhesion layer; a second metal nitride layer is formed on the second metal adhesion layer.
In summary, the metal stack of the present application, through the arrangement of the first metal layer, enables the second metal layer to grow towards a specific crystal orientation, and improves the flatness of the metal stack.
In summary, in the method for forming a metal stack of the present application, when the first metal layer is formed by sputtering, the metal nitride remaining on the surface of the target is removed, so that the next wafer is ensured to have no metal nitride when the first metal adhesion layer is formed in the first process chamber, which is beneficial to improving ohmic contact and adhesion between the first metal adhesion layer and the substrate, and avoiding cracks between the second metal layer and the substrate. In addition, the conventional process adopts 10kW to 19kW of low-power deposited aluminum film for improving the flatness of the aluminum film, and the process can use 25kW to 35kW of high-power deposited aluminum film due to the configuration of the first metal layer, so that the process time is shortened and the production efficiency is increased.
The foregoing description is only an overview of the technical solutions of the present application, and in order to make the technical means of the present application more clearly understood, the present application may be implemented according to the content of the specification, and the following detailed description of the preferred embodiments of the present application will be given with reference to the accompanying drawings.
Drawings
FIG. 1 is a cross-sectional view of a metal stack according to one embodiment of the present application.
Fig. 2 is a flow chart illustrating a method of forming a metal stack according to an embodiment of the present application.
Fig. 3A-3C are cross-sectional views illustrating various stages of a method of forming a metal stack according to one embodiment of the present application.
Fig. 4 is a flow chart illustrating a method of forming a metal stack according to another embodiment of the present application.
Reference numerals illustrate:
10: substrate and method for manufacturing the same
20: first metal barrier layer
21: first metal adhesion layer
22: first metal nitride layer
23: a first metal layer
30: second metal layer
40: second metal barrier layer
41: second metal adhesion layer
42: second metal nitride layer
S11 to S13, S21 to S25: step (a)
Detailed Description
Further advantages and effects of the present application will be readily apparent to those skilled in the art from the present disclosure, by describing the embodiments of the present application with specific examples.
It should be noted that, without conflict, the embodiments and features of the embodiments in the present application may be combined with each other. The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments. In order to make the present application solution better understood by those skilled in the art, the following description will be made in detail and with reference to the accompanying drawings in the embodiments of the present application, it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Referring to fig. 1, a cross-sectional view of a metal stack is shown according to an embodiment of the present application. As shown in fig. 1, the metal stack includes a substrate 10, a first metal barrier layer 20. The substrate 10 is a silicon substrate or a silicon carbide substrate, and may be of N-type or P-type. A first metal barrier layer 20 is disposed on the substrate 10. Further, the first metal barrier layer 20 includes a first metal adhesion layer 21, a first metal nitride layer 22, and a first metal layer 23. The first metal adhesion layer 21 is disposed on the substrate 10 and serves to improve ohmic contact between the second metal layer 30 and the substrate 10, and serves as an adhesion layer to make adhesion of the substrate 10 to the first metal nitride layer 22 stronger.
In the present embodiment, the material of the first metal adhesion layer 21 includes titanium (Ti). The first metal nitride layer 22 is disposed on the first metal adhesion layer 21; in other words, the first metal adhesion layer 21 is located between the substrate 10 and the first metal nitride layer 22. The first metal nitride layer 22 prevents diffusion of the second metal layer 30 into the substrate 10 to form a metal penetration. The material of the first metal nitride layer 22 includes titanium nitride (TiN). The first metal layer 23 is disposed on the first metal nitride layer 22; in other words, the first metal nitride layer 22 is located between the first metal adhesion layer 21 and the first metal layer 23. The material of the first metal layer 23 includes titanium (Ti), and the crystal orientation of the first metal layer 23 is [002].
In another embodiment, the material of the first metal adhesion layer 21 and the material of the first metal layer 23 include tantalum (Ta), and the material of the first metal nitride layer 22 and the material of the first metal nitride layer include tantalum nitride (TaN).
Referring to fig. 1, the metal stack further includes a second metal layer 30. The second metal layer 30 is disposed on the first metal barrier layer 20. Further, the second metal layer 30 is disposed on the first metal layer 23; in other words, the first metal layer 23 is disposed between the first metal nitride layer 22 and the second metal layer 30. The second metal layer 30 is grown toward a specific crystal orientation through the first metal layer 23 to improve the flatness of the second metal layer 30. For example, the material of the second metal layer 30 is copper-aluminum alloy, the mass percentage of copper is 0.5% of the second metal layer 30, and the specific crystal orientation of the second metal layer 30 is [111].
Referring to fig. 1, the metal stack further includes a second metal barrier layer 40. A second metal barrier layer 40 is disposed on the second metal layer 30. In the present embodiment, the second metal barrier layer 40 includes a second metal adhesion layer 41 and a second metal nitride layer 42. The second metal adhesion layer 41 is disposed on the second metal layer 30; in other words, the second metal layer 30 is disposed between the first metal layer 23 and the second metal adhesion layer 41. The adhesion of the second metal layer 30 and the second metal nitride layer 42 is stronger through the second metal adhesion layer 41, and the second metal adhesion layer 41 can act as a barrier layer to prevent aluminum from reacting with nitrogen to form aluminum nitride. The material of the second metal adhesion layer 41 includes titanium. A second metal nitride layer 42 is disposed on the second metal adhesion layer 41; in other words, the second metal adhesion layer 41 is located between the second metal layer 30 and the second metal nitride layer 42. The second metal nitride layer 42 acts as an anti-reflection layer during photolithography to facilitate etching of the metal stack and formation of the electrode. The material of the second metal nitride layer 42 comprises titanium nitride.
In another embodiment, the material of second metal adhesion layer 41 comprises tantalum and the material of second metal nitride layer 42 comprises tantalum nitride.
The crystal orientation of titanium nitride has [111] and [200], so if the aluminum film is directly deposited on the titanium nitride film, the aluminum film correspondingly has two crystal orientations, and the two crystal orientations are respectively [111] and [200], so that the surface of the aluminum film is uneven, and the flatness of the aluminum film is poor. The conventional metal stack formed using titanium, titanium nitride and aluminum had an amplitude of 39.26nm and a peak count of 11 as measured by atomic force microscopy (atomic force microscope, AFM).
In contrast, in the present application, the titanium film is located between the aluminum film and the titanium nitride film, the titanium film is a close-packed cubic system of crystal orientation [002], and the aluminum film is a face-centered cubic system of crystal orientation [111]. The difference of lattice arrangement between the close-packed cubic system of the crystal direction [002] and the face-centered cubic system of the crystal direction [111] is minimum, and the stress between lattices is also minimum, so that the titanium film enables the aluminum film to grow towards the crystal direction [111], thereby improving the flatness of the metal laminated layer. The amplitude of the metal stack of the present application was 5.43nm, and the number of peaks of the metal stack of the present application was 6, as measured by AFM.
In addition, the crystal directions of tantalum nitride are [111] and [200], and the tantalum film is a body-centered cubic crystal system with the crystal direction of [111]. Since the crystal orientation [111] of the tantalum film is the same as that [111] of the aluminum film, the tantalum film enables the aluminum film to grow towards the crystal orientation [111], thereby improving the flatness of the metal laminate.
Referring to fig. 2, a flowchart illustrating a method for forming a metal stack according to an embodiment of the present application is shown. As shown in fig. 2, the method for forming the metal stack includes steps S11 to S13. The formation of the metal stack shown in fig. 1 by the metal stack formation method shown in fig. 2 is exemplarily described below.
Step S11: a first metal barrier layer 20 is formed on the substrate 10 within the first process chamber, wherein the first metal barrier layer 20 includes a first metal layer 23.
As shown in fig. 3A, the first metal barrier layer 20 includes a first metal adhesion layer 21, a first metal nitride layer 22, and a first metal layer 23. Accordingly, the step S11 may be divided into three parts, namely, a part where the first metal adhesion layer 21 is formed, a part where the first metal nitride layer 22 is formed, and a part where the first metal layer 23 is formed, and the method of forming the first metal barrier layer 20 may be a chemical vapor deposition method or sputtering, and hereinafter, the part where the first metal adhesion layer 21 is formed, the part where the first nitride layer 22 is formed, and the part where the first metal layer 23 is formed will be described by taking sputtering as an example.
In the portion where the first metal adhesion layer 21 is formed, the sputtering power is set to 3kW to 10kW and the flow rate of argon gas is set to 28sccm to 31sccm, sputtering is performed with a titanium target, high-energy argon ions strike the titanium target, so that titanium atoms are struck out, and further the first metal adhesion layer 21 is formed on the substrate 10, and the thickness of the first metal adhesion layer 21 is 50 angstroms to 100 angstroms.
In the portion where the first metal nitride layer 22 is formed, the power is set to 11kW to 19kW, the argon flow is 28sccm, and the nitrogen flow is 80sccm to 120sccm, and sputtering is performed with a titanium target, at this time, nitrogen ions are dissociated to generate nitrogen ions, and the nitrogen ions chemically react with titanium to form titanium nitride, and further the first metal nitride layer 22 is formed on the first metal adhesion layer 21, and the thickness of the first nitride layer 22 is 150 angstroms to 250 angstroms.
In the portion where the first metal layer 23 is formed, the power is set to be 3kW to 10kW and the flow rate of argon gas is set to be 28sccm to 31sccm, sputtering is performed by using a titanium target, high-energy argon ions strike the titanium target, so that titanium atoms are struck out, and further the first metal layer 23 is formed on the first nitride layer 22, and the thickness of the first metal layer 23 is set to be 20 angstroms to 100 angstroms. It should be noted that, after the titanium film and the titanium nitride film are formed in the same chamber through sputtering, the titanium film is formed through sputtering, so that the titanium nitride remained on the surface of the titanium target is removed, the bottom titanium film deposited on the next wafer is ensured to be pure titanium, no titanium nitride component is contained, and the ohmic contact and the adhesion between the metal layer and the substrate are improved.
Step S12: a second metal layer 30 is formed on the first metal layer 23 in the second process chamber.
As shown in fig. 3B, the second metal layer 30 is located on the first metal layer 23. The method of forming the second metal layer 30 may be chemical vapor deposition or sputtering, and the sputtering will be used as an example to describe the formation of the second metal layer 30. Setting the process temperature to 270 ℃, the power to 25 kW-30 kW and the argon flow to 100 sccm-160 sccm, sputtering a copper-aluminum alloy target, and striking the copper-aluminum alloy target by high-energy argon ions to strike out the aluminum atoms so as to form a second metal layer 30 on the first metal layer 23, wherein the thickness of the second metal layer 30 is 1200-4000 angstroms.
Step S13: a second metal barrier layer 40 is formed on the second metal layer 30 in the third process chamber.
As shown in fig. 3C, the second metal barrier layer 40 includes a second metal adhesion layer 41 and a second metal nitride layer 42. Accordingly, step S13 may be divided into two portions, a portion where the second metal adhesion layer 41 is formed and a portion where the second metal nitride layer 42 is formed, and a method of forming the second metal barrier layer 40 may be a chemical vapor deposition method or sputtering, and hereinafter, a portion where the second metal adhesion layer 41 is formed and a portion where the second metal nitride layer 42 is formed will be described as sputtering.
In the portion where the second metal adhesion layer 41 is formed, the power is set to be 3kW to 10kW and the argon flow is set to be 28sccm to 31sccm, sputtering is performed with a titanium target, high-energy argon ions strike the titanium target, so that titanium atoms are struck out, and further the second metal adhesion layer 41 is formed on the second metal layer 30, and the thickness of the second metal adhesion layer 41 is 50 angstroms to 150 angstroms.
In the portion where the second metal nitride layer 42 is formed, the power is set to 11kW to 19kW, the argon gas flow rate is 28sccm, and the nitrogen gas flow rate is 80sccm to 120sccm, and sputtering is performed with a titanium target, at this time, nitrogen ions are dissociated to generate nitrogen ions, and the nitrogen ions chemically react with titanium to form titanium nitride, and further the second metal nitride layer 42 is formed on the second metal adhesion layer 41, and the thickness of the second metal nitride layer 42 is about 150 angstroms to 250 angstroms.
Referring to fig. 4, a flowchart illustrating a method of forming a metal stack according to another embodiment of the present application is shown. As shown in fig. 4, the method for forming the metal stack includes steps S21 to S25. The steps S21, S23 and S25 are the same as the steps S11, S12 and S13 shown in fig. 2, and will not be repeated here.
Step S22: the substrate 10 with the first metal barrier 20 is transferred from the first process chamber to the second process chamber by a robot arm. Due to the assistance of the mechanical arm, the substrate 10 with the first metal barrier layer 20 does not need to be taken out from the first process chamber and contacted with air, so that dust in the air is prevented from polluting the first metal barrier layer 20, and the substrate 10 with the first metal barrier layer 20 is still in a high vacuum environment in the conveying process.
Step S24: the substrate 10 with the second metal layer 30 is transferred from the second process chamber to the third process chamber by means of a robot arm. Due to the assistance of the mechanical arm, the substrate 10 with the second metal layer 30 does not need to be taken out from the second process chamber and contacted with air, so that dust in the air is prevented from polluting the second metal layer 30, and the substrate 10 with the second metal layer 30 is still in a high vacuum environment in the conveying process.
In summary, the metal stack of the present application, through the arrangement of the first metal layer, enables the second metal layer to grow toward a single specific crystal orientation, and improves the flatness of the metal stack.
In summary, in the method for forming a metal stack of the present application, when the first metal layer is formed by sputtering, the metal nitride remaining on the surface of the target is removed, so that the next wafer is ensured to have no metal nitride when the first metal adhesion layer is formed in the first process chamber, which is beneficial to improving ohmic contact and adhesion between the first metal adhesion layer and the substrate, and avoiding cracks between the second metal layer and the substrate. In addition, the conventional process adopts 10kW to 19kW of low-power deposited aluminum film for improving the flatness of the aluminum film, and the process can use 25kW to 35kW of high-power deposited aluminum film due to the configuration of the first metal layer, so that the process time is shortened and the production efficiency is increased.

Claims (10)

1. A metal laminate comprising:
a substrate (10);
a first metal barrier layer (20) disposed on the substrate (10) and comprising a first metal layer (23);
a second metal layer (30) disposed on the first metal layer (23) and configured to grow the second metal layer (30) toward a specific crystal direction through the first metal layer (23); and
a second metal barrier layer (40) disposed on the second metal layer (30).
2. The metal stack of claim 1, characterized in that the first metal layer (23) has a crystal orientation [002], and the specific crystal orientation of the second metal layer (30) is [111].
3. The metal stack of claim 1, wherein the first metal barrier layer (20) comprises a first metal adhesion layer (21) and a first metal nitride layer (22), the first metal adhesion layer (21) being disposed on the substrate (10), the first metal nitride layer (22) being disposed on the first metal adhesion layer (21), the first metal layer (23) being disposed between the first metal nitride layer (22) and the second metal layer (30).
4. A metal stack as claimed in claim 3, characterized in that the second metal barrier layer (40) comprises a second metal adhesion layer (41) and a second metal nitride layer (42), the second metal adhesion layer (41) being arranged on the second metal layer (30), the second metal nitride layer (42) being arranged on the second metal adhesion layer (41), the second metal layer (30) being arranged between the first metal layer (23) and the second metal adhesion layer (41).
5. The metal stack of claim 4, wherein the material of the first metal adhesion layer (21), the material of the second metal adhesion layer (41) and the material of the first metal layer (23) comprise titanium, the material of the first metal nitride layer (22) and the material of the second metal nitride layer (42) comprise titanium nitride, and the material of the second metal layer (30) is a copper-aluminum alloy.
6. The metal stack of claim 4, wherein the material of the first metal adhesion layer (21), the material of the second metal adhesion layer (41), and the material of the first metal layer (23) comprise tantalum, the material of the first metal nitride layer (22) and the material of the second metal nitride layer (42) comprise tantalum nitride, and the material of the second metal layer (30) is a copper-aluminum alloy.
7. A method of forming a metal stack, comprising:
forming a first metal barrier layer (20) on a substrate (10) within a first process chamber, wherein the first metal barrier layer (20) comprises a first metal layer (23);
forming a second metal layer (30) on the first metal layer (23) in a second process chamber, wherein the second metal layer (30) is grown towards a specific crystal direction through the first metal layer (23); and
a second metal barrier layer (40) is formed on the second metal layer (30) within the third process chamber.
8. The method of forming a metal stack according to claim 7, characterized in that the first metal layer (23) has a crystal orientation of [002], and the specific crystal orientation of the second metal layer (30) is [111].
9. The method of forming a metal stack according to claim 7, wherein forming the first metal barrier layer (20) on the substrate (10) within the first process chamber comprises:
forming a first metal adhesion layer (21) on the substrate (10);
forming a first metal nitride layer (22) on the first metal adhesion layer (21); and
-forming the first metal layer (23) on the first metal nitride layer (22), wherein the first metal layer (23) is arranged between the first metal nitride layer (22) and the second metal layer (30).
10. The method of forming a metal stack of claim 7, wherein forming the second metal barrier layer (40) on the second metal layer (30) within the third process chamber comprises:
forming a second metal adhesion layer (41) on the second metal layer (30), wherein the second metal layer (30) is disposed between the first metal layer (23) and the second metal adhesion layer (41); and
a second metal nitride layer (42) is formed on the second metal adhesion layer (41).
CN202311164719.4A 2023-09-08 2023-09-08 Metal laminate and method for forming metal laminate Pending CN117253911A (en)

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