CN117245570A - Grinding wheel for thinning wafer - Google Patents

Grinding wheel for thinning wafer Download PDF

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Publication number
CN117245570A
CN117245570A CN202310137939.1A CN202310137939A CN117245570A CN 117245570 A CN117245570 A CN 117245570A CN 202310137939 A CN202310137939 A CN 202310137939A CN 117245570 A CN117245570 A CN 117245570A
Authority
CN
China
Prior art keywords
grinding wheel
thinning
buffer layer
wafer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310137939.1A
Other languages
Chinese (zh)
Inventor
何嘉哲
陈泰甲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan China Grinding Wheel Enterprise Co ltd
Original Assignee
Taiwan China Grinding Wheel Enterprise Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan China Grinding Wheel Enterprise Co ltd filed Critical Taiwan China Grinding Wheel Enterprise Co ltd
Publication of CN117245570A publication Critical patent/CN117245570A/en
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/18—Layered products comprising a layer of metal comprising iron or steel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/001—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as supporting member
    • B24D3/002—Flexible supporting members, e.g. paper, woven, plastic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/02—Wheels in one piece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/08—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F15/00—Suppression of vibrations in systems; Means or arrangements for avoiding or reducing out-of-balance forces, e.g. due to motion
    • F16F15/10—Suppression of vibrations in rotating systems by making use of members moving with the system
    • F16F15/12—Suppression of vibrations in rotating systems by making use of members moving with the system using elastic members or friction-damping members, e.g. between a rotating shaft and a gyratory mass mounted thereon
    • F16F15/121—Suppression of vibrations in rotating systems by making use of members moving with the system using elastic members or friction-damping members, e.g. between a rotating shaft and a gyratory mass mounted thereon using springs as elastic members, e.g. metallic springs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F15/00—Suppression of vibrations in systems; Means or arrangements for avoiding or reducing out-of-balance forces, e.g. due to motion
    • F16F15/10—Suppression of vibrations in rotating systems by making use of members moving with the system
    • F16F15/12—Suppression of vibrations in rotating systems by making use of members moving with the system using elastic members or friction-damping members, e.g. between a rotating shaft and a gyratory mass mounted thereon
    • F16F15/121—Suppression of vibrations in rotating systems by making use of members moving with the system using elastic members or friction-damping members, e.g. between a rotating shaft and a gyratory mass mounted thereon using springs as elastic members, e.g. metallic springs
    • F16F15/124—Elastomeric springs
    • F16F15/126—Elastomeric springs consisting of at least one annular element surrounding the axis of rotation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/56—Damping, energy absorption

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

The invention discloses a grinding wheel for thinning a wafer, which comprises the following components: a substrate; a buffer layer arranged on the substrate, wherein the thickness of the buffer layer is 20-50 μm; and a polishing layer disposed on the buffer layer, wherein the polishing layer has a plurality of abrasive particles dispersed therein, and the average particle size of the abrasive particles is between 0.05 and 5 μm. The grinding wheel for thinning the wafer not only has the effect of relieving external force and reducing damage of components exerted by the buffer layer, but also can keep good precision.

Description

Grinding wheel for thinning wafer
Technical Field
The invention relates to a grinding wheel (grinding wheel), in particular to a grinding wheel for thinning a wafer.
Background
In the present stage, the related art of polishing has affected the semiconductor industry from various aspects, such as wafer thinning or wafer planarization; and various techniques such as mechanical wheel polishing (CMP) and Chemical Mechanical Polishing (CMP).
The chemical mechanical polishing can planarize the surface of the wafer for subsequent integrated circuit fabrication, the process includes the use of polishing slurry and polishing pad, the slurry is corrosive, and particles in the slurry can fill the micro grooves of the polishing pad and provide mechanical friction to polish the wafer when the polishing pad rotates after the micro grooves are fixed, thereby reducing the roughness of the surface of the wafer and achieving the polishing effect.
Mechanical wheel grinding is the most commonly used technology for wafer thinning at present, and is mainly characterized by high thinning speed, relatively low equipment cost and stable thinning quality. Specifically, the mechanical wheel grinding utilizes a main shaft rotating at a high speed to drive a grinding wheel, and utilizes abrasive particles on the surface of the grinding wheel to contact and interact with a working surface, so that the purpose of grinding is achieved.
Since the above-mentioned techniques generally involve a rapid and repeated grinding process, the grinding apparatus may damage its components due to collision during long-term use, thereby affecting the precision of manufacturing subsequent finished products. In view of this, the prior art has proposed additional technical features of adding a polymer buffer layer to a polishing pad for CMP (e.g., taiwan patent publication No. TW I410299B); see also the related content of arranging spring structures inside the polishing layer (e.g. chinese patent publication No. CN 105397650 a).
Disclosure of Invention
The inventors have observed that the buffer layer may reduce the accuracy of the grinding wheel for thinning the wafer, so that the buffer layer is generally only applied to polishing grinding materials; however, the polishing process has relatively high processing efficiency, processing cost, and environmental lifetime cost. In view of the above, the present inventors have further found that, when the particle size of the abrasive particles and the thickness of the buffer layer in the structure are both within a certain range, the buffer layer can exert the effect of reducing the external force and the damage of the component, and can further maintain the good precision of the grinding wheel. In other words, the wafer thinning can be actually used to perform the processing procedure to the greatest extent, thereby reducing the cost of the whole process and improving the efficiency.
In view of the above, one aspect of the present invention provides a grinding wheel for thinning a wafer, comprising:
a substrate; a buffer layer arranged on the substrate, wherein the thickness of the buffer layer is 20-50 μm; and a polishing layer disposed on the buffer layer, wherein the polishing layer has a plurality of abrasive particles dispersed therein, and the average particle size of the abrasive particles is between 0.05 and 5 μm.
Another aspect of the present invention provides a grinding wheel for thinning a wafer, comprising: a substrate; a first adhesive layer disposed on the substrate; a buffer layer arranged on the first adhesive layer, wherein the thickness of the buffer layer is 20-50 μm; a second adhesive layer disposed on the buffer layer; and a polishing layer disposed on the second adhesive layer, wherein the polishing layer has a plurality of abrasive particles dispersed therein, and the abrasive particles have a particle size of 0.05-5 μm.
According to an embodiment of the present invention, the buffer layer comprises a metal material. Preferably, the structural metal material is a metal sheet with a periodic structure. More preferably, the thickness of the metal material is 1 to 50 μm.
According to an embodiment of the present invention, the buffer layer comprises a polymer elastomer. Preferably, the polymeric elastomer is a silicone resin.
According to an embodiment of the invention, the first adhesive layer and/or the second adhesive layer is an epoxy resin.
According to one embodiment of the present invention, the polishing layer has a polishing tip, and the polishing tip is in the shape of a blade, cone, arc, cylinder, cone, or column. Preferably, the abrasive particles are selected from the group consisting of diamond, cubic boron nitride, alumina, ceria, and silicon carbide.
According to an embodiment of the invention, the substrate is selected from the group consisting of stainless steel, die steel, metal alloys, ceramics and plastics.
Compared with the prior art, the grinding wheel for thinning the wafer is provided with the buffer layer, and the thickness and the particle size of abrasive particles are defined to be within a certain numerical range; therefore, the grinding wheel for thinning the wafer not only has the effect of relieving external force and reducing damage of components exerted by the buffer layer, but also can keep good precision. In other words, the wafer thinning can be actually used to perform the processing procedure to the greatest extent, thereby reducing the cost of the whole process and improving the efficiency.
Drawings
The foregoing and other objects, features, advantages and embodiments of the invention will be apparent from the following description taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic cross-sectional view of a grinding wheel for thinning a wafer according to a first embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of a grinding wheel for thinning a wafer according to a second embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a grinding wheel for thinning a wafer according to a third embodiment of the present invention.
FIG. 4 is a graph showing a comparison of the change in force of a grinding wheel over time.
Reference numerals illustrate:
100a,100b,100c: grinding wheel for thinning wafer
110: substrate board
120: adhesive layer
130: buffer layer
130S: periodic structure
150: polishing layer
152: abrasive particles
A: grinding wheel
B: workpiece
D: thickness of (L)
d: particle size
Various features and elements are not drawn to scale in accordance with conventional practice in the drawings in a manner that best serves to illustrate the specific features and elements that are pertinent to the present invention. In addition, like components and parts are designated by the same or similar reference numerals among the different drawings.
Detailed Description
The following embodiments should not be construed as unduly limiting the invention. Those of ordinary skill in the art to which the invention pertains may make modifications and variations to the embodiments discussed herein without departing from the spirit or scope of the invention and yet remain within the scope of the invention.
The terms "a" and "an" herein mean that there is one or more than one (i.e., at least one) of the grammatical object herein.
First, the present invention provides a grinding wheel for thinning a wafer, comprising: a substrate; a buffer layer disposed on the substrate; and a polishing layer disposed on the buffer layer, wherein the polishing layer has a plurality of abrasive particles dispersed therein. In another aspect, the present invention provides a grinding wheel for thinning a wafer, comprising: a substrate; a first adhesive layer disposed on the substrate; a buffer layer disposed on the first adhesive layer; a second adhesive layer disposed on the buffer layer; and a polishing layer disposed on the second bonding layer, wherein the polishing layer has a plurality of abrasive grains dispersed therein.
The substrate is formed by one or more of stainless steel, metal material, plastic material and ceramic material; in practice, the polishing layer can be carried. Preferred materials may be metal substrates, metal alloy substrates, stainless steel substrates or die steel substrates. More specifically, the metal substrate includes, but is not limited to, copper, iron, aluminum, titanium, tin, or the like; the metal alloy substrate includes, but is not limited to, iron alloy, copper alloy, aluminum alloy, titanium alloy, magnesium alloy, or the like.
The term "adhesive layer" as used herein refers to a structure used to adhere adjacent layers. Specifically, the materials of the first/second adhesive layers are all selected from the group consisting of pressure sensitive adhesive, one-liquid paste, two-liquid paste, acrylic resin and epoxy resin; preferably, the first adhesive layer and the second adhesive layer are both made of epoxy resin. Pressure sensitive adhesives typically comprise a carrier film comprising polyester and having flowable adhesive layers on the upper and lower sides of the carrier film. One-pack paste refers to a paste comprising a high molecular weight elastomer as an adhesive, preferably comprising polyurethane, and one-pack paste comprises an oil-modified paint and a moisture-curable paint. The acryl resin comprises a normal temperature hardening type and a heating hardening drying type; the normal temperature hardening type is mainly an acrylic resin monomer, the heating hardening drying type is based on an acrylic resin polymer, active reactive groups are introduced into the acrylic resin, and the resin alone or with the resin containing the reactive groups and a cross-linking agent react to form a three-dimensional network structure when heated. The epoxy resin can be further formed into a three-dimensional structure by adding a crosslinking agent.
The term "buffer layer" as used herein refers to a layer that provides an effect of reducing the external force applied to the device; in some cases, the buffer layer may be provided with a material having a higher compressibility than other portions. The thickness of the buffer layer is 20 to 50 μm, for example: 20. 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, or 50 μm.
According to some embodiments of the invention, the buffer layer comprises a metal material; specifically, the metal material is selected from the group consisting of iron, cobalt, nickel, chromium, manganese, silicon, and aluminum. Still further, the metal material is a metal sheet with a periodic structure. The term "metal sheet with periodic structure" as used herein refers to a metal sheet provided with microstructures having reproducibility and regular arrangement; preferably, the microstructure may be an elastic structure. According to some particular embodiments of the invention, the metallic material has a thickness of 1 to 50 μm, for example: 1.5, 10, 15, 20, 25, 30, 35, 40, 45 or 50 μm.
According to some embodiments of the invention, the buffer layer comprises a polymeric elastomer. As used herein, a "high molecular elastomer" is a polymer class that exhibits rubber-like qualities. According to some embodiments of the invention, the polymeric elastomer material is selected from the group consisting of resins, polymers, polymer composites, epoxy resins, and silicone resins; preferably, the buffer layer comprises a silicone resin.
The "polishing layer" referred to herein is a layer for carrying the multiple abrasive particles and is attached to the substrate. The abrasive particles are primarily embedded and fixed in the abrasive layer. Specifically, the polishing layer material is selected from a brazing material, an electroplating material, a ceramic material, a metal material or a polymer material, which is not limited in the present invention. Further, the brazing material, the plating material, or the metal material is selected from the group consisting of iron, cobalt, nickel, chromium, manganese, silicon, aluminum; the high polymer material comprises epoxy resin, polyester resin, polyacrylic resin or phenolic resin; in addition, the ceramic material comprises various metal oxides, nitrides, carbides, borides, silicides, or combinations thereof, such as silicon carbide, silicon nitride, aluminum oxide, titanium carbide, titanium boride, or boron carbide, or the like.
The "abrasive particles" as referred to herein are selected from the group consisting of natural diamond, synthetic diamond, polycrystalline diamond, cubic boron nitride, alumina, ceria, and silicon carbide. The abrasive particles can have a shape such as, but not limited to, pyramidal, conical, arcuate, cylindrical, knife-edged, or prismatic. The abrasive particles have an average particle size of from 0.05 to 5 μm; for example: 0.05, 1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, 5 μm.
Example 1:
embodiment 1 of the present application is a grinding wheel for thinning a wafer provided by the present invention. Fig. 1 illustrates a laminated structure of a grinding wheel 100A for wafer thinning according to embodiment 1 of the present invention. The grinding wheel 100A for thinning a wafer includes a substrate 110, and a buffer layer 130 and a polishing layer 150 are sequentially disposed on the substrate 110. The buffer layer 130 has a thickness D. The polishing layer 150 includes multiple abrasive particles 152 having a particle size d. In detail, the buffer layer 130 is disposed directly above the substrate 110, and the polishing layer 150 is disposed directly above the buffer layer 130.
On the other hand, the thickness D is 20 to 50 μm, for example: 20. 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, or 50 μm. The particle diameter d is 0.05 to 5 mu m; for example: 0.05, 1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, 5 μm.
Example 2:
embodiment 2 of the present application is a grinding wheel for thinning a wafer provided by the present invention. Fig. 2 shows a laminated structure of a grinding wheel 100B for wafer thinning according to embodiment 2 of the present invention. The structure of the grinding wheel 100B for wafer thinning is substantially similar to that of the grinding wheel 100A for wafer thinning in embodiment 1, and the difference is that in the grinding wheel 100B for wafer thinning, an adhesive layer 120 (first adhesive layer and second adhesive layer, respectively) is further provided between the buffer layer 130 and the substrate 110, and between the polishing layer 150 and the buffer layer 130.
Example 3:
embodiment 3 of the present application is a grinding wheel for thinning a wafer provided by the present invention. Fig. 3 shows a laminated structure of a grinding wheel 100C for thinning a wafer according to embodiment 3 of the present invention. The structure of the grinding wheel 100C for thinning is substantially similar to that of the grinding wheel 100B for thinning in embodiment 2, and the difference is that the buffer layer 130 is provided with a multicycle structure 130S therein. Specifically, the multicycle structures 130S are hollow structures and have a fixed distance therebetween. According to the preferred embodiment of the present invention, the multicycle structure 130S may be an elastic structure or a supporting structure, respectively; for example; and (3) a spring.
Analysis of stress variation over time:
here, the inventor respectively tests the change situation of external force applied to the grinding wheel for thinning the wafer and the conventional grinding wheel during the grinding of the workpiece. Figure 4 shows the force variation of grinding wheel a over time during grinding of workpiece B. As shown in fig. 4, the horizontal axis represents time (in ms), and the vertical axis represents the external force (in N) applied to the grinding wheel. The embodiments are shown in solid lines, whereas the prior art grinding wheels are shown in dashed lines. In detail, in this test, the grinding of the grinding wheel adopts a feed mode of a constant speed.
As can be seen from fig. 4, the external force applied to the grinding wheel for thinning the wafer in the process of grinding the workpiece in the embodiment is substantially gentle and stable compared with the conventional grinding wheel, and the conventional grinding wheel is not stressed in a sudden rise in the test.
Without being limited by a particular theory, the polishing layer thickness is about 5 to 500 times, preferably 100 to 350 times, more preferably 120 to 200 times the buffer layer thickness.
In summary, the grinding wheel for thinning a wafer according to the embodiments can substantially reduce the external force applied during the grinding process relative to the existing grinding wheel based on the definition thereof. Therefore, the grinding wheel for thinning the wafer can not only have the effect of relieving external force and reducing damage of components exerted by the buffer layer, but also maintain good precision, and can further improve the processing efficiency, processing cost, environment perpetual cost and other aspects of the process in practice.
While the invention has been described in detail in connection with the present invention, it should be understood that the invention is not limited to the precise embodiments, but is intended to cover modifications and variations which fall within the scope of the invention as defined by the appended claims.

Claims (11)

1. A grinding wheel for thinning a wafer, comprising:
a substrate;
a buffer layer arranged on the substrate, wherein the thickness of the buffer layer is 20-50 μm; a kind of electronic device with high-pressure air-conditioning system
The polishing layer is arranged on the buffer layer and is provided with a plurality of abrasive grains dispersed therein, and the average grain diameter of the abrasive grains is between 0.05 and 5 mu m.
2. A grinding wheel for thinning a wafer, comprising:
a substrate;
a first adhesive layer disposed on the substrate;
a buffer layer arranged on the first adhesive layer, wherein the thickness of the buffer layer is 20-50 μm;
a second adhesive layer disposed on the buffer layer; a kind of electronic device with high-pressure air-conditioning system
And the grinding layer is arranged on the second bonding layer and is provided with a plurality of abrasive grains dispersed therein, and the grain diameter of the abrasive grains is between 0.05 and 5 mu m.
3. The grinding wheel for thinning a wafer according to claim 1 or 2, wherein the buffer layer comprises a metallic material.
4. A grinding wheel for thinning a wafer according to claim 3, wherein the metal material is a metal sheet having a periodic structure.
5. The grinding wheel for thinning of wafers of claim 4 wherein the thickness of the metallic material is 1 to 50 μm.
6. The grinding wheel for thinning a wafer according to claim 1 or 2, wherein the buffer layer comprises a polymer elastomer.
7. The grinding wheel for wafer thinning according to claim 6, wherein the polymeric elastomer is a silicone resin.
8. The grinding wheel for thinning a wafer according to claim 2, wherein the first bonding layer and/or the second bonding layer is an epoxy resin.
9. The grinding wheel for thinning a wafer according to claim 1 or 2, wherein the grinding layer has a grinding tip, and the grinding tip is in a blade shape, a cone shape, an arc shape, a cylinder shape, a cone shape, or a corner column shape.
10. The grinding wheel of claim 9, wherein the abrasive particles are selected from the group consisting of diamond, cubic boron nitride, aluminum oxide, cerium oxide, and silicon carbide.
11. The grinding wheel for thinning a wafer according to claim 1 or 2, wherein the substrate is selected from the group consisting of stainless steel, die steel, metal alloy, ceramic, and plastic.
CN202310137939.1A 2022-06-17 2023-02-20 Grinding wheel for thinning wafer Pending CN117245570A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW111122595A TWI809935B (en) 2022-06-17 2022-06-17 Grinding wheel for wafer thinning
TW111122595 2022-06-17

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Publication Number Publication Date
CN117245570A true CN117245570A (en) 2023-12-19

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TW (1) TWI809935B (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI669193B (en) * 2017-08-28 2019-08-21 中國砂輪企業股份有限公司 Grinding tool and method of manufacturing same
US11551936B2 (en) * 2018-07-31 2023-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Self-healing polishing pad

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TWI809935B (en) 2023-07-21

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