CN117241661B - Two-dimensional oxygen group element end group MXene film, preparation method thereof and brain-like semiconductor device - Google Patents
Two-dimensional oxygen group element end group MXene film, preparation method thereof and brain-like semiconductor device Download PDFInfo
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 50
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 150000002367 halogens Chemical class 0.000 claims description 23
- 229910052736 halogen Inorganic materials 0.000 claims description 21
- 238000004528 spin coating Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 239000006185 dispersion Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 13
- 238000000227 grinding Methods 0.000 claims description 12
- 229910052744 lithium Inorganic materials 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 239000002243 precursor Substances 0.000 claims description 10
- 229910052793 cadmium Inorganic materials 0.000 claims description 9
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 9
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000004321 preservation Methods 0.000 claims description 6
- 229910004573 CdF 2 Inorganic materials 0.000 claims description 3
- 229910018091 Li 2 S Inorganic materials 0.000 claims description 3
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 50
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 239000011521 glass Substances 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 14
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000012467 final product Substances 0.000 description 4
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000000946 synaptic effect Effects 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 229910001416 lithium ion Inorganic materials 0.000 description 3
- 150000002927 oxygen compounds Chemical class 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 210000000225 synapse Anatomy 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 1
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003956 synaptic plasticity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229940088594 vitamin Drugs 0.000 description 1
- 229930003231 vitamin Natural products 0.000 description 1
- 235000013343 vitamin Nutrition 0.000 description 1
- 239000011782 vitamin Substances 0.000 description 1
- 150000003722 vitamin derivatives Chemical class 0.000 description 1
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- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a two-dimensional oxygen element end group MXene film, a preparation method thereof and a brain-like semiconductor device, relates to the technical field of two-dimensional MXene films, and aims to solve the problems that the two-dimensional MXene film in the brain-like semiconductor device has small ion capacity and electrical properties are difficult to regulate and control. According to the invention, the oxygen group terminal group is substituted for the halogen group terminal group on the surface of the original MXene material, so that the obtained two-dimensional MXene film has uniform oxygen group terminal group, and the related problems are solved.
Description
Technical Field
The invention relates to the technical field of two-dimensional MXene films, in particular to a two-dimensional oxygen group element end group MXene film, a preparation method thereof and a brain-like semiconductor device.
Background
Edge computing is an important mode for realizing 'man-machine' ternary fusion in the universal intelligent interconnection era, and the number of edge computing units based on von neumann architecture is increased drastically and simultaneously faces the bottleneck of high power consumption and high delay. The edge computing unit of the organism is a biological synapse. Synapses are a computationally integrated mode, have no redundant power consumption and call delay generated in the data handling process, and have ultra-low power consumption less than 10fj and high-efficiency parallel computing capacity. Therefore, by simulating the ion migration mechanism of biological synapses, the development of brain-like semiconductor devices becomes an important direction for breaking through the bottleneck of the edge computing unit.
The problem of the current brain-like semiconductor device is that the two-dimensional MXene film has small ion capacity and difficult regulation and control of electrical properties, so that the dynamic range of the device is insufficient, the plasticity of the device is poor, and the synaptic weight distinction is unclear. Therefore, the development of the two-dimensional MXene film with large ion capacity and adjustable electrical property has important significance.
Disclosure of Invention
The invention provides a two-dimensional oxygen group element end group MXene film, which has uniform oxygen group element end groups.
The invention provides a preparation method of a two-dimensional oxygen element end group MXene film, which comprises the following steps: s1, mixing and grinding a precursor MAX phase material, a halogen cadmium-containing compound and a first inorganic salt, and preserving heat at a first set temperature under the protection of inert gas to obtain a halogen element end group MXene material; s2, mixing and grinding the halogen element end group MXene material, the oxygen group lithium-containing compound and the second inorganic salt, and preserving heat at a second set temperature under the protection of inert gas to obtain the oxygen element end group MXene material; s3, preparing a two-dimensional oxygen group element end group MXene dispersion liquid based on the oxygen group element end group MXene material; s4, preparing a two-dimensional oxygen element end group MXene film based on the two-dimensional oxygen element end group MXene dispersion liquid through spin coating.
The preparation method is further provided as follows: the first set temperature is 400-1100 ℃.
The preparation method is further provided as follows: the heat preservation time of the first set temperature is 2-24h.
The preparation method is further provided as follows: the second set temperature is 30-35 ℃.
The preparation method is further provided as follows: the heat preservation time of the second set temperature is 12-24h.
The preparation method is further provided as follows: the precursor MAX phase material is Ti 2 AlC、Ti 3 AlC 2 、V 2 AlC、Nb 2 AlC、Cr 2 One of AlC.
The preparation method is further provided as follows: the halogen cadmium-containing compound comprises CdF 2 、CdCl 2 、CdBr 2 、CdI 2 At least one of them.
The preparation method is further provided as follows: the oxygen group lithium-containing compound is Li 2 O、Li 2 S、Li 2 Se、Li 2 One of Te.
The invention provides a brain-like semiconductor device which comprises a top electrode layer, an ion film layer, a resistance change layer and a bottom electrode layer which are sequentially arranged, wherein the resistance change layer is a two-dimensional oxygen group element end group MXene film prepared by the preparation method.
The beneficial effects of the invention are as follows:
1. the oxygen group end group is replaced by the halogen group end group, so that the two-dimensional MXene film containing uniform oxygen group end groups can be prepared.
2. Because the Gibbs free energy of the oxygen group element end group MXene material as a whole is lower than that of the halogen group element end group MXene material, the end group substitution reaction can be smoothly carried out. The ion capacity of the two-dimensional MXene film is increased by utilizing the strong coupling effect between the oxygen group element and the ions, so that the electrical regulation and control of the two-dimensional MXene film are realized.
3. The brain-like semiconductor device constructed based on the two-dimensional oxygen group element end group MXene thin film solves the problems of insufficient dynamic range, poor device plasticity and unclear synaptic weight distinction of the brain-like semiconductor device.
Drawings
FIG. 1 is a SEM image of a multilayer halogen end group MXene material of preparation example 1;
FIG. 2 is a SEM image of a multilayer oxygen terminal MXene material of preparation example 1;
FIG. 3 is a SEM image of a two-dimensional oxygen terminal MXene material of preparation example 1;
FIG. 4 is an optical microscope image of a two-dimensional oxygen terminal MXene film of preparation example 1;
FIG. 5 is an XRD pattern of a two-dimensional oxygen element terminated MXene film of preparation example 1;
FIG. 6 is a graph showing pulse characteristics of the brain-like semiconductor device of preparation example 4;
fig. 7 is a pulse characteristic curve of the brain-like semiconductor device in comparative preparation example.
Detailed Description
Those skilled in the art can, with the benefit of this disclosure, suitably modify the process parameters to achieve this. It is specifically noted that all similar substitutions and modifications will be apparent to those skilled in the art, and they are considered to be included in the present invention. While the methods and applications of this invention have been described in terms of preferred embodiments, those skilled in the relevant art will recognize that the invention can be practiced and practiced with modification and alteration of the methods and applications described herein, or with appropriate modification and combination, without departing from the spirit and scope of the invention.
The invention provides a two-dimensional oxygen element end group MXene film which is characterized by having uniform oxygen element end groups. In the prior art, the two-dimensional MXene film generally has non-uniform other element end groups, and compared with the non-uniform other element end groups, the strong coupling effect between the oxygen group element and the ions increases the ion capacity of the two-dimensional MXene film, so that the electrical regulation and control of the two-dimensional MXene film are realized.
The invention provides a preparation method of a two-dimensional oxygen element end group MXene film, which comprises the following steps:
s1, mixing and grinding a precursor MAX phase material, a halogen cadmium-containing compound and a first inorganic salt, and preserving heat at a first set temperature under the protection of inert gas to obtain a halogen element end group MXene material;
s2, mixing and grinding the halogen element end group MXene material, the oxygen group lithium-containing compound and the second inorganic salt, and preserving heat at a second set temperature under the protection of inert gas to obtain the oxygen element end group MXene material;
s3, preparing a two-dimensional oxygen group element end group MXene dispersion liquid based on the oxygen group element end group MXene material;
s4, preparing a two-dimensional oxygen element end group MXene film based on the two-dimensional oxygen element end group MXene dispersion liquid through spin coating.
The precursor MAX phase material is Ti 2 AlC、Ti 3 AlC 2 、V 2 AlC、Nb 2 AlC、Cr 2 AlOne of C. The halogen cadmium-containing compound comprises CdF 2 、CdCl 2 、CdBr 2 、CdI 2 One of them. The first inorganic salt is one group of NaF and KF, naCl and KCl, naBr and KBr and NaI and KI with the molar ratio of 1:1. The second inorganic salt is one group of LiF and KF, liCl and KCl, liBr and KBr, and LiI and KI with the molar ratio of 10:7.
The first set temperature is 400-1100 ℃, and the heat preservation time of the first set temperature is 2-24h. The second set temperature is 30-35 ℃, and the heat preservation time of the second set temperature is 12-24h.
The halogen element end group MXene material is multi-layer Ti 2 CF x 、Ti 2 CCl x 、Ti 2 CBr x 、Ti 2 CI x 、Ti 3 C 2 F x 、Ti 3 C 2 Cl x 、Ti 3 C 2 Rr x 、Ti 3 C 2 I x 、V 2 CF x 、V 2 CCl x 、V 2 CBr x 、V 2 CI x 、Nb 2 CF x 、Nb 2 CCl x 、Nb 2 CBr x 、Nb 2 CI x 、Cr 2 CF x 、Cr 2 CCl x 、Cr 2 CBr x 、Cr 2 CI x In one of the materials, x is the stoichiometric number of the halogen end group, and x=1-2.
The oxygen group element end group MXene material is multi-layer Ti 2 CO y 、Ti 2 CS y 、Ti 2 CSe y 、Ti 2 CTe y 、Ti 3 C 2 O y 、Ti 3 C 2 S y 、Ti 3 C 2 Se y 、Ti 3 C 2 Te y 、V 2 CO y 、V 2 CS y 、V 2 CSe y 、V 2 CTe y 、Nb 2 CO y 、Nb 2 CS y 、Nb 2 CSe y 、Nb 2 CTe y 、Cr 2 CO y 、Cr 2 CS y 、Cr 2 CSe y 、Cr 2 CTe y In one of the materials, y is the stoichiometric number of the end group of the oxygen group element, and y=1-2.
Preparation example 1
The method is carried out according to the following steps.
S1, preparing a precursor MAX phase material Ti 2 CdCl of AlC and halogen cadmium-containing compound 2 Fully mixing and grinding inorganic salt NaCl and KCl in a molar ratio of 1:3:2, heating to 600 ℃ under the protection of argon, and preserving the temperature for 4 hours to obtain a halogen element end group MXene material Ti 2 CCl x 。
S2, the halogen element end group MXene material Ti 2 CCl x Lithium-containing oxygen compound Li 2 Fully mixing and grinding O, inorganic salt LiCl and KCl in a molar ratio of 2:3:70, heating to 600 ℃ under the protection of argon, and preserving for 12 hours to obtain multi-layer Ti 2 CCl x The halogen group end group is replaced by the oxygen group end group on the surface of the material to obtain the oxygen group end group MXene material Ti 2 CO y 。
S3, the oxygen group element end group MXene material Ti 2 CO y Adding 25% TMAH aqueous solution according to the proportion of 0.2g/10ml, stirring for 24 hours under the protection of argon, controlling the temperature to be 35 ℃ in the stirring process, centrifuging and washing the TMAH aqueous solution clean after full stripping, adding N-methyl formamide (NMF) solution, and obtaining the two-dimensional oxygen group element end group MXene dispersion Ti with the material concentration of 10mg/ml 2 CO y 。
S4, dispersing the two-dimensional oxygen group element end group MXene dispersion liquid Ti 2 CO y Dripping the film on ITO conductive glass, spin-coating for 5 seconds at 500 rpm, spin-coating for 25 seconds at 3000 rpm, drying the ITO conductive glass at 60 ℃ after spin-coating, and obtaining a final product of two-dimensional oxygen group element end group MXene film Ti on the surface of the ITO conductive glass 2 CO y 。
Preparation example 2
The method is carried out according to the following steps.
S1, preparing a precursor MAX phase material Ti 3 AlC 2 Cadmium-containing halogen compound CdBr 2 The molar ratio of the inorganic salt NaBr to KBr is 1:3:2 fullyMixing and grinding, heating to 600 ℃ under the protection of argon, and preserving heat for 4 hours to obtain the halogen element end group MXene material Ti 3 C 2 Br x 。
S2, the halogen element end group MXene material Ti 3 C 2 Br x Lithium-containing oxygen compound Li 2 S, fully mixing and grinding inorganic salt LiBr and KBr in a molar ratio of 2:3:100, heating to 550 ℃ under the protection of argon, and preserving the temperature for 12 hours to obtain the multi-layer Ti 3 C 2 Br x The halogen group end group is replaced by the oxygen group end group on the surface of the material to obtain the oxygen group end group MXene material Ti 3 C 2 S y 。
S3, the oxygen group element end group MXene material Ti 3 C 2 S y Adding 25% TMAH aqueous solution according to the proportion of 0.2g/10ml, stirring for 24 hours under the protection of argon, controlling the temperature to be 35 ℃ in the stirring process, centrifuging and washing the TMAH aqueous solution clean after full stripping, adding N-methyl formamide (NMF) solution, and obtaining the two-dimensional oxygen group element end group MXene dispersion Ti with the material concentration of 11mg/ml 3 C 2 S y 。
S4, dispersing the two-dimensional oxygen group element end group MXene dispersion liquid Ti 3 C 2 S y Dripping the film on ITO conductive glass, spin-coating for 5 seconds at 500 rpm, spin-coating for 25 seconds at 3000 rpm, drying the ITO conductive glass at 60 ℃ after spin-coating, and obtaining a final product of two-dimensional oxygen group element end group MXene film Ti on the surface of the ITO conductive glass 3 C 2 S y 。
Preparation example 3
The method is carried out according to the following steps.
S1, preparing a precursor MAX phase material Nb 2 CdCl of AlC and halogen cadmium-containing compound 2 Fully mixing and grinding inorganic salt NaCl and KCl in a molar ratio of 1:3:2, heating to 700 ℃ under the protection of argon, and preserving the temperature for 4 hours to obtain a halogen element end group MXene material Nb 2 CCl x 。
S2, preparing a halogen element end group MXene material Nb 2 CCl x Lithium-containing oxygen compound Li 2 Se, inorganic saltsFully mixing and grinding LiCl and KCl in a molar ratio of 2:3:70, heating to 550 ℃ under the protection of argon, and preserving heat for 18h to obtain multi-layer Ti 2 CBr x The halogen group end group is replaced by the oxygen group end group on the surface of the material to obtain the oxygen group end group MXene material Nb 2 CSe y 。
S3, terminating the oxygen group element with MXene material Nb 2 CSe y Adding 25% TMAH aqueous solution according to the proportion of 0.2g/10ml, stirring for 24 hours under the protection of argon, controlling the temperature to be 35 ℃ in the stirring process, centrifuging and washing the TMAH aqueous solution clean after full stripping, adding N-methyl formamide (NMF) solution, and obtaining two-dimensional oxygen group element end group MXene dispersion Nb with the material concentration of 10mg/ml 2 CSe y 。
S4, dispersing the two-dimensional oxygen group element end group MXene dispersion liquid Nb 2 CSe y Dripping the film on ITO conductive glass, spin-coating for 5 seconds at 500 rpm, spin-coating for 25 seconds at 3000 rpm, drying the ITO conductive glass at 60 ℃ after spin-coating, and obtaining a final product of two-dimensional oxygen group element end group MXene film Nb on the surface of the ITO conductive glass 2 CSe y 。
Examples
The embodiment provides a brain-like semiconductor device, which comprises a top electrode layer, an ion film layer, a resistance change layer and a bottom electrode layer which are sequentially arranged, wherein the resistance change layer is the two-dimensional oxygen group element end group MXene film. The two-dimensional oxygen group element end group MXene film has uniform oxygen group element end groups, and particularly has all relevant technical effects as the products obtained in preparation examples 1-3.
Preparation example 4
Two-dimensional oxygen terminal MXene film Ti based on final product in preparation example 1 2 CO y The brain-like semiconductor device of the example was prepared as follows.
Dissolving lithium bistrifluoromethane sulfonyl imide (LiTFSI) and polyvinyl alcohol (PVA) in water to prepare ionic gel, dripping the ionic gel on a two-dimensional oxygen group element end group MXene film, spin-coating for 5 seconds at 500 rpm, spin-coating for 25 seconds at 3000 rpm, and spin-coating for two seconds after spin-coating is finishedThe group of vitamin oxygen terminal MXene film was placed on ITO conductive glass and baked at 60 ℃. Li can be obtained on the two-dimensional oxygen group element end group MXene film + An ion film. The ITO conductive glass is then placed in a thermal evaporation system to a temperature of less than 5 x 10 -4 Is under vacuum degree of Li + The ion film was continued to evaporate a 210nm thick Au electrode to obtain a brain-like semiconductor device as described in the examples.
Comparative preparation example
Preparation of a two-dimensional Mixed element end group MXene film Ti in the prior art 2 CT x . MAX phase material Ti of precursor 2 AlC is slowly added into a solution prepared from LiF and 9M hydrochloric acid, wherein LiF and Ti 2 The molar ratio of AlC is 7.5:1. Stirring is carried out for 48h, and the temperature is controlled to be 40 ℃ in the stirring process. Centrifugally washing the mixture of the three to neutrality after stirring, and taking the upper liquid to obtain two-dimensional mixed element end group MXene dispersion Ti 2 CT x . T= F, O and OH, x=1-2. Mixing two-dimensional mixed element end group MXene dispersion liquid Ti 2 CT x Dripping the two-dimensional mixed element end group MXene film Ti on ITO conductive glass, spin-coating for 5 seconds at 500 rpm, spin-coating for 25 seconds at 3000 rpm, drying the ITO conductive glass at 60 ℃ after spin-coating, and obtaining the product on the surface of the ITO conductive glass 2 CT x 。
MXene film Ti based on the two-dimensional mixed element end group 2 CT x A brain-like semiconductor device of the prior art is fabricated. Dissolving lithium bis (trifluoromethanesulfonyl) imide (LiTFSI) and polyvinyl alcohol (PVA) in water to prepare ionic gel, dripping the ionic gel on a two-dimensional mixed element end group MXene film, spin-coating for 5 seconds at a rotation speed of 500 rpm, spin-coating for 25 seconds at a rotation speed of 3000 rpm, and placing the two-dimensional mixed element end group MXene film on ITO conductive glass and drying at 60 ℃. Thus Li can be obtained on the two-dimensional mixed element end group MXene film + An ion film. The ITO conductive glass is then placed in a thermal evaporation system to a temperature of less than 5 x 10 -4 Is under vacuum degree of Li + The ion film is continuously evaporated with a layer of Au electrode with the thickness of 210nm to obtain the final productA brain semiconductor device of the kind.
From the comparison of pulse characteristic curves of the brain-like semiconductor devices in preparation example 4 and comparative preparation example, a large amount of Li+ ions can be easily embedded into the two-dimensional oxygen group element end group MXene film and undergo oxidation-reduction reaction with the uniform oxygen group element and Li+ ions, so that the electrical property of the two-dimensional oxygen group element end group MXene film is obviously regulated and controlled, the pulse characteristic curve of the semiconductor device based on the two-dimensional oxygen group element end group MXene film shows obvious synaptic plasticity, and the problems of insufficient dynamic range and unclear synaptic weight distinction of the brain-like semiconductor device are improved. In contrast, the two-dimensional MXene film in the prior art generally has non-uniform other element end groups, has the problems of small ion capacity and difficult electrical property regulation, and causes that Li+ ions are difficult to be embedded into the MXene film to generate oxidation-reduction reaction, so that the dynamic range of the brain-like semiconductor device based on the two-dimensional mixed element end groups MXene film is insufficient, the device plasticity is poor, and the synaptic weight distinction is unclear.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which is also intended to be a scope of the present invention.
Claims (6)
1. A preparation method of a two-dimensional oxygen group element end group MXene film is characterized by comprising the following steps: the method comprises the following steps:
s1, mixing and grinding a precursor MAX phase material, a halogen cadmium-containing compound and a first inorganic salt, and preserving heat at a first set temperature under the protection of inert gas to obtain a halogen element end group MXene material;
s2, mixing and grinding the halogen element end group MXene material, the oxygen group lithium-containing compound and the second inorganic salt, and preserving heat at a second set temperature under the protection of inert gas to obtain the oxygen element end group MXene material;
s3, preparing a two-dimensional oxygen group element end group MXene dispersion liquid based on the oxygen group element end group MXene material;
s4, preparing a two-dimensional oxygen element end group MXene film based on the two-dimensional oxygen element end group MXene dispersion liquid through spin coating;
the precursor MAX phase material is Ti 2 AlC、Ti 3 AlC 2 、V 2 AlC、Nb 2 AlC、Cr 2 One of AlC;
the halogen cadmium-containing compound is CdF 2 、CdCl 2 、CdBr 2 、CdI 2 One of the following;
the oxygen group lithium-containing compound is Li 2 O、Li 2 S、Li 2 Se、Li 2 One of Te.
2. The method for preparing the two-dimensional oxygen group element end group MXene film according to claim 1, which is characterized in that: the first set temperature is 400-1100 ℃.
3. The method for preparing the two-dimensional oxygen group element end group MXene film according to claim 1, which is characterized in that: the heat preservation time of the first set temperature is 2-24h.
4. The method for preparing the two-dimensional oxygen group element end group MXene film according to claim 1, which is characterized in that: the second set temperature is 30-35 ℃.
5. The method for preparing the two-dimensional oxygen group element end group MXene film according to claim 1, which is characterized in that: the heat preservation time of the second set temperature is 12-24h.
6. A brain-like semiconductor device, characterized in that: the preparation method comprises the steps of sequentially arranging a top electrode layer, an ion film layer, a resistance changing layer and a bottom electrode layer, wherein the resistance changing layer is a two-dimensional oxygen group element end group MXene film prepared by the preparation method according to any one of claims 1-5.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61164228A (en) * | 1985-01-16 | 1986-07-24 | Seiko Epson Corp | Manufacture of ii-vi group compound semiconductor thin film |
| CN111725399A (en) * | 2020-06-24 | 2020-09-29 | 清华大学 | Gating device based on oxygen family compound film and preparation method thereof |
| CN113718227A (en) * | 2020-05-25 | 2021-11-30 | 中国科学院金属研究所 | Two-dimensional layered ternary compound and preparation method thereof |
| CN114349006A (en) * | 2021-12-08 | 2022-04-15 | 中国科学院宁波材料技术与工程研究所 | Surface modification method of MXene material |
| CN114408873A (en) * | 2021-12-08 | 2022-04-29 | 中国科学院宁波材料技术与工程研究所 | Method for etching MXene material |
| CN115663393A (en) * | 2022-11-02 | 2023-01-31 | 华南理工大学 | Chlorine-end-group MXene ink-based diaphragm for lithium metal battery and preparation method thereof |
| CN116745864A (en) * | 2021-01-13 | 2023-09-12 | 株式会社村田制作所 | Conductive film and method for producing same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7053544B2 (en) * | 2018-10-02 | 2022-04-12 | コリア・インスティテュート・オブ・サイエンス・アンド・テクノロジー | Two-dimensional Maxene particles surface-modified with a functional group containing saturated or unsaturated hydrocarbons, and methods and applications thereof. |
| US11866597B2 (en) * | 2020-02-13 | 2024-01-09 | Korea Institute Of Science And Technology | 2-dimensional MXene surface-modified with catechol derivative, method for preparing the same, and MXene organic ink including the same |
-
2023
- 2023-11-10 CN CN202311489374.XA patent/CN117241661B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61164228A (en) * | 1985-01-16 | 1986-07-24 | Seiko Epson Corp | Manufacture of ii-vi group compound semiconductor thin film |
| CN113718227A (en) * | 2020-05-25 | 2021-11-30 | 中国科学院金属研究所 | Two-dimensional layered ternary compound and preparation method thereof |
| CN111725399A (en) * | 2020-06-24 | 2020-09-29 | 清华大学 | Gating device based on oxygen family compound film and preparation method thereof |
| CN116745864A (en) * | 2021-01-13 | 2023-09-12 | 株式会社村田制作所 | Conductive film and method for producing same |
| CN114349006A (en) * | 2021-12-08 | 2022-04-15 | 中国科学院宁波材料技术与工程研究所 | Surface modification method of MXene material |
| CN114408873A (en) * | 2021-12-08 | 2022-04-29 | 中国科学院宁波材料技术与工程研究所 | Method for etching MXene material |
| CN115663393A (en) * | 2022-11-02 | 2023-01-31 | 华南理工大学 | Chlorine-end-group MXene ink-based diaphragm for lithium metal battery and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| 《MXene材料的纳米工程及其作为超级电容器电极材料的研究进展》;丁玲等;《无机材料学报》;第第38卷卷(第第6期期);第619-631页 * |
| 《面向后摩尔时代集成电路的二维非硅半导体材料与器件》;张跃;《科学通报》;第第68卷卷(第第22期期);第2871-2872页 * |
| 超级电容器百篇论文点评(2016.3.1―2016.9.30);郑超;李林艳;于学文;杨斌;陈雪丹;黄益;刘秋香;周洲;吴奕环;顾应展;陈宽;袁峻;乔志军;傅冠生;阮殿波;;储能科学与技术(第06期);第882-892页 * |
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