CN117239540A - Laser and preparation method thereof - Google Patents
Laser and preparation method thereof Download PDFInfo
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- CN117239540A CN117239540A CN202311349753.9A CN202311349753A CN117239540A CN 117239540 A CN117239540 A CN 117239540A CN 202311349753 A CN202311349753 A CN 202311349753A CN 117239540 A CN117239540 A CN 117239540A
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Abstract
The application discloses a laser and a preparation method thereof, and relates to the technical field of semiconductor devices. The laser and the preparation method thereof provided by the application can inhibit the emergent of the high-order transverse mode under the condition of not affecting the working efficiency of the device, thereby reducing the transverse divergence angle of the emergent light of the device.
Description
Technical Field
The application relates to the technical field of semiconductor devices, in particular to a laser and a preparation method thereof.
Background
A semiconductor laser, also known as a laser diode, is a laser that uses semiconductor material as a gain substance. The semiconductor laser has the advantages of small volume, light weight, high reliability, long service life and low power consumption, and is widely applied to various fields of national economy at present, and in recent years, a high-power wide-stripe semiconductor laser is more concerned.
The development direction of the high-power wide-stripe semiconductor laser is that a single chip improves the light-emitting power of laser and reduces the transverse divergence angle of the laser on the premise of keeping the width of a light-emitting area unchanged. The improvement of the light-emitting power of laser requires the improvement of the quantum efficiency outside the chip and the quality of the coating film on the light-emitting surface, and the reduction of the transverse divergence angle of the laser requires the inhibition of the high-order transverse mode in the cavity of the semiconductor laser. The semiconductor laser has a waveguide structure in a transverse section that can support a specific distribution of optical fields propagating therein along the axial direction without a change in the distribution, such optical field distribution being referred to as the transverse mode of the laser. The wider the transverse waveguide, the larger the equivalent refractive index difference between the high and low refractive index regions of the transverse waveguide is, the larger the number of transverse modes which can be supported by the waveguide is, and the larger the divergence angle of the high-order transverse mode is than that of the low-order transverse mode. Therefore, the corresponding wide waveguide of the wide semiconductor laser enables a plurality of transverse modes in the cavity to be excited simultaneously, and the transverse divergence angle of an emergent beam of the wide semiconductor laser is increased. In the prior art, the method for reducing the transverse divergence angle of the wide semiconductor laser is concentrated on arranging a mode disturbing structure at the edge of the waveguide to increase the loss of a high-order transverse mode so as to achieve the effect of inhibiting the lasing of the high-order transverse mode, but the structure can bring additional loss to a low-order transverse mode at the same time so as to reduce the working efficiency of the device.
Disclosure of Invention
The application aims to provide a laser and a preparation method thereof, which can inhibit the emergent of a high-order transverse mode under the condition of not affecting the working efficiency of the device, thereby reducing the transverse divergence angle of the emergent light of the device.
In one aspect, an embodiment of the present application provides a laser, including a substrate, and a first waveguide layer, an active layer, a second waveguide layer, a contact layer, and an electrode layer sequentially disposed on the substrate, where two opposite sides of the electrode layer along a first direction are respectively provided with a stripe groove, the stripe groove extends along a second direction, and a groove bottom of the stripe groove extends to the second waveguide layer, a refractive index adjusting material is filled at a groove bottom of the stripe groove, and a refractive index of the refractive index adjusting material under a light emitting wavelength of the active layer is greater than a refractive index of the second waveguide layer, and the first direction is perpendicular to the second direction. The refractive index adjusting material can raise the refractive index of the two sides of the plane where the second waveguide layer is located, so that the refractive index difference of the plane where the second waveguide layer is located is reduced, the emergent of the high-order transverse mode is further suppressed, and the transverse divergence angle of the laser emergent light is reduced.
As an embodiment, part of the refractive index adjusting material is co-layered with the second waveguide layer or all of the refractive index adjusting material is co-layered with the second waveguide layer to improve the tolerance in the laser manufacturing process.
As an implementation manner, the ratio of the thickness of the same layer of the refractive index adjusting material and the second waveguide layer to the thickness of the second waveguide layer is between 0.05 and 1, so that the refractive index adjusting material can further raise the refractive index of the two sides of the plane where the second waveguide layer is located.
As an implementation mode, the refractive index adjusting material and the second waveguide layer are partially and co-layered, the depth of the strip-shaped groove is between 0.5 and 3 mu m, and the process difficulty of preparing the laser is reduced on the basis of guaranteeing the adjustment of the refractive index.
As an implementation manner, the width of the strip-shaped groove is between 10 and 50 mu m, so that the refractive index adjusting material has a wider width, and the refractive index adjusting material is beneficial to raising the refractive index of the two sides of the plane where the second waveguide layer is located.
As an implementation mode, the refractive index adjusting material is further filled with a conductive material, an insulating layer is further arranged between the conductive material and the side wall of the strip-shaped groove and between the conductive material and the refractive index adjusting material, and the conductive material and the electrode layer are deposited in the same layer to serve as an electric connecting piece of the laser.
As an implementation manner, the refractive index adjusting material is a dielectric material or an intrinsic semiconductor material, so that the light emitting efficiency of the laser is reduced by avoiding the outward diffusion of current through the refractive index adjusting material.
As an embodiment, the refractive index adjusting material is intrinsic silicon, and/or intrinsic germanium, which has both high insulation and a high refractive index, and is relatively easily available.
As an implementation mode, the first waveguide layer is an N waveguide layer, the second waveguide layer is a P waveguide layer, a buffer layer and an N cladding layer are further arranged between the substrate and the N waveguide layer, the buffer layer is in contact with the substrate, and a P cladding layer is further arranged between the P waveguide layer and the contact layer. The first waveguide layer is set to be an N waveguide layer, the second waveguide layer is set to be a P waveguide layer, so that the substrate of the laser is also set to be an N type, the overall resistance of the device is reduced, the thickness of the part of the active layer, which is far away from one side of the substrate, can be reduced, and the heat dissipation capacity of the laser after flip-chip bonding is improved. Wherein, the refractive index of the N coating layer is smaller than that of the N waveguide layer, so that total reflection is formed on one side of the N waveguide layer close to the N coating layer; also, the P cladding layer has a refractive index smaller than that of the P waveguide layer to form total reflection at a side of the P waveguide layer close to the P cladding layer, and the buffer layer is used to mitigate lattice mismatch and thermal mismatch between the substrate and the N cladding layer.
Another aspect of the embodiments of the present application provides a method for manufacturing a laser, which is used for manufacturing the laser, including providing a semiconductor epitaxial wafer, where the semiconductor epitaxial wafer includes a substrate, and a first waveguide layer, an active layer, a second waveguide layer, and a contact layer sequentially disposed on the substrate; forming a strip-shaped groove from two opposite sides of the contact layer along the first direction towards the direction of the substrate, wherein the strip-shaped groove extends along the second direction, the bottom of the strip-shaped groove extends to the second waveguide layer, and refractive index adjusting materials are filled in the strip-shaped groove, wherein at least one part of refractive index adjusting materials and the second waveguide layer are on the same layer; an insulating layer is arranged in the strip-shaped groove, and the insulating layer covers the upper surface of the refractive index adjusting material and the side wall of the strip-shaped groove; and depositing a metal material on the contact layer to form an electrode layer, wherein the metal material fills the strip-shaped grooves.
The beneficial effects of the embodiment of the application include:
the application provides a laser, which comprises a substrate, a first waveguide layer, an active layer, a second waveguide layer, a contact layer and an electrode layer, wherein the first waveguide layer, the active layer, the second waveguide layer, the contact layer and the electrode layer are sequentially arranged on the substrate, strip-shaped grooves are respectively arranged on two opposite sides of the electrode layer along a first direction, the strip-shaped grooves extend along a second direction, the bottoms of the strip-shaped grooves extend to the second waveguide layer, refractive index adjusting materials are filled at the bottoms of the strip-shaped grooves, so that two materials are arranged in a plane where the second waveguide layer is located, the refractive index of the refractive index adjusting materials is larger than that of the second waveguide layer under the light emitting wavelength of the active layer, the first direction is perpendicular to the second direction, and a large amount of heat is generated inside a device when the laser works, so that the temperature inside the laser rises. Because the edge of the laser has more heat dissipation paths compared with the central part, the temperature of the central position of the device is higher than that of the edge, according to the relation between the temperature of the semiconductor material and the refractive index, the higher the temperature is, the larger the refractive index is, so that the difference between the equivalent refractive index of a fundamental mode at the central position of the device and the equivalent refractive index of a fundamental mode in a strip-shaped groove is continuously increased, the refractive index of a refractive index regulating material under the light emitting wavelength of an active layer is larger than that of a second waveguide layer, the larger refractive index of the refractive index regulating material can raise the equivalent refractive indexes of the fundamental modes at two sides, so that the difference between the equivalent refractive index of the fundamental mode at the central position of the device and the equivalent refractive index of the fundamental mode in the strip-shaped groove is reduced, and the mode of laser which can be supported by a transverse waveguide structure is reduced, and the transverse divergence angle of laser emitted by the laser is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a laser according to an embodiment of the present application;
FIG. 2 is a cross-sectional view taken along line I-I of FIG. 1;
FIG. 3 is a refractive index profile of a refractive index adjustment material introduced;
FIG. 4 is a graph of the temperature rise induced refractive index profile of a laser during operation;
FIG. 5 is a graph of simulation results of the fundamental mode equivalent index difference versus mode number and far field angle in the laser center position and stripe slot;
FIG. 6 is a flowchart of a method for manufacturing a laser according to an embodiment of the present application;
fig. 7 is a schematic diagram of a prior art laser.
Icon: a 10-laser; 111-a substrate; 112-a first waveguide layer; 113-an active layer; 114-a second waveguide layer; 115-a contact layer; 116 electrode layer; 117-a bar slot; 118-refractive index adjusting material; 119-a buffer layer; a 120-N cladding layer; a 121-P cladding layer; 123-insulating layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
The application provides a laser 10, as shown in fig. 1 and 2, comprising a substrate 111, and a first waveguide layer 112, an active layer 113, a second waveguide layer 114, a contact layer 115 and an electrode layer 116 which are sequentially arranged on the substrate 111, wherein strip grooves 117 are respectively arranged on two opposite sides of the electrode layer 116 along a first direction (A direction in fig. 1), the strip grooves 117 extend along a second direction (B direction in fig. 1), the bottoms of the strip grooves 117 extend to the second waveguide layer 114, the bottoms of the strip grooves 117 are filled with a refractive index adjusting material 118, the refractive index of the refractive index adjusting material 118 under the light emitting wavelength of the active layer 113 is larger than that of the second waveguide layer 114, and the first direction is perpendicular to the second direction.
The active layer 113 serves as an operation layer of the laser 10, and a voltage difference is applied across the active layer 113 for injecting a current into the active layer 113 to generate laser photons. The optical mode field transmitted in the cavity of the laser 10 is limited in two directions, the limitation in the first direction being realized by the longitudinal waveguide structure of the P cladding layer 121, the second waveguide layer 114, the active layer 113, the first waveguide layer 112 and the N cladding layer 120, in which direction only the fundamental mode exists and the fundamental mode at each position corresponds to an equivalent refractive index calculated by weighting the refractive indices of the materials of the longitudinal layers. In the conventional laser structure, as shown in fig. 7, the second waveguide layer is partially etched in the stripe groove, so that the equivalent refractive index n1 of the fundamental mode is smaller than the equivalent refractive index n0 of the fundamental mode of the current injection region, and the difference between the two equivalent refractive indices forms a transverse waveguide confinement structure. During operation of the laser 10, a significant amount of heat is generated within the device, causing the temperature within the laser to rise. Since the edge of the laser 10 has more heat dissipation paths than the central part, the temperature of the central position of the device is higher than that of the edge, and the higher the temperature is, the larger the refractive index is according to the relation between the temperature and the refractive index of the semiconductor material, so that the equivalent refractive index of the fundamental mode of the central position of the device is larger, and as shown in fig. 4, the change of the equivalent refractive index of the fundamental mode of the central position caused by temperature rise is larger than that of the fundamental mode at two sides. This can lead to a further increase in the difference between the fundamental mode equivalent refractive index in the central position of the laser and the fundamental mode equivalent refractive index in the stripe slot during operation, increasing the number of higher order transverse modes, and thus leading to a greater transverse divergence angle.
In the embodiment of the application, the bottom of the bar-shaped groove 117 is filled with the refractive index adjusting material, the refractive index of the refractive index adjusting material 118 at the light emitting wavelength of the active layer 113 is larger than that of the second waveguide layer 114, as shown in fig. 3, in the plane where the second waveguide layer 114 is located, the refractive index at the position of the bar-shaped groove 117 is higher than that at other positions, so that the refractive index adjusting material 118 can raise the refractive indexes at two sides, thereby reducing the equivalent refractive index difference between two sides and the center of the waveguide structure when the laser 10 works, reducing the high-order transverse modulus in the waveguide structure, and the divergence angle of the high-order transverse modulus is larger than that of the low-order transverse modulus. In addition, the present application reduces the number of higher order transverse modes by changing the structure of the plane in which second waveguide layer 114 lies, without affecting the operating efficiency of laser 10.
To further illustrate the relationship between the equivalent refractive index difference of the fundamental longitudinal mode and the number of transverse modes and the angle of the transverse far field of the laser, the embodiment of the present application simulates the relationship between the equivalent refractive index difference of the fundamental longitudinal mode and the number of transverse modes and the angle of the transverse far field, as shown in fig. 5, it can be seen from fig. 5 that when the equivalent refractive index difference of the current injection region of the laser 10 and the region where the stripe groove 117 is located is 0.002, the number of transverse modes is 35, the angle of the transverse far field is 12.2, and when the equivalent refractive index difference of the current injection region of the laser 10 and the region where the stripe groove 117 is located is reduced to 0.001, the number of transverse modes is reduced to 29, and the angle of the transverse far field is reduced to 9.8. As can be seen from fig. 5, the reduction of the equivalent refractive index difference can effectively reduce the number of lateral modes of the laser and reduce the lateral far field angle.
In addition, the stripe grooves 117 are disposed on the electrode layer 116 along the first direction, the stripe grooves 117 extend to the second waveguide layer 114, and when the current is transmitted downwards along the directions of the electrode layer 116 and the contact layer 115, the stripe grooves 117 can block the outward diffusion of the current along the plane where the layers are located, so as to avoid the decrease of the current injection efficiency caused by the outward diffusion of the current.
The specific structure and material of the active layer 113 are not limited in the embodiments of the present application, and the structure may be bulk material (bulk material), single-layer or multi-layer quantum wells, quantum wires, quantum dots, quantum cascade structures, or the like. The material can be any combination of GaAs, inP, gaSb and GaN material systems.
In operation of the laser 10, current needs to be injected into the active layer 113, that is, a voltage difference is applied across the two ends of the laser 10, and the electrode layer 116 in the embodiment of the present application is a connection point at one end of the laser 10, it is understood that there is a connection point at the other end of the laser 10, and as illustrated in fig. 2, another electrode layer 116 is disposed at a side of the substrate 111 away from the first waveguide layer 112 for connection point at the other end. In addition, in order to facilitate ohmic contact between the electrode layer 116 and the contact layer 115, the contact layer 115 is heavily doped.
The laser 10 provided by the application comprises a substrate 111, a first waveguide layer 112, an active layer 113, a second waveguide layer 114, a contact layer 115 and an electrode layer 116 which are sequentially arranged on the substrate 111, wherein strip grooves 117 are respectively arranged on two opposite sides of the electrode layer 116 along the first direction, the strip grooves 117 extend along the second direction, the bottoms of the strip grooves 117 extend to the second waveguide layer 114, the bottom of the strip grooves 117 is filled with a refractive index regulating material 118, so that two materials are arranged in a plane where the second waveguide layer 114 is located, the refractive index of the refractive index regulating material 118 under the light emitting wavelength of the active layer 113 is larger than the refractive index of the second waveguide layer 114, the first direction is perpendicular to the second direction, when the laser 10 works, the device has higher temperature inside, the device center has higher temperature relative to the two sides due to the difference of heat dissipation capacity, the refractive index regulating material has higher refractive index, the longitudinal base mold has equivalent refractive index difference, the refractive index regulating material has larger refractive index under the light emitting wavelength of the active layer 113, the refractive index of the second waveguide layer 114 has larger refractive index, the refractive index of the laser 118 can be supported by the refractive index of the second waveguide layer 114, the refractive index of the laser is higher, the refractive index of the laser can be higher, and the laser light emitting index of the laser can be higher, the laser light can be higher than the laser light can have the laser light emitting refractive index of the laser light with lower the longitudinal refractive index of the base layer, and the refractive index of the laser is greatly lower than the refractive index of the laser has the refractive index difference is higher lower than the refractive index.
Optionally, a portion of index-modifying material 118 is co-layer with second waveguide layer 114 or is co-layer with second waveguide layer 114 in its entirety.
The bottom of the stripe groove 117 extends to the second waveguide layer 114, and when the bottom of the stripe groove 117 is filled with the refractive index adjusting material 118, the refractive index adjusting material 118 may be higher than the second waveguide layer 114, as shown in fig. 2, so that the refractive index adjusting material 118 is partially co-layered with the second waveguide layer 114; or may be flush with the upper surface of second waveguide layer 114, so that index of refraction modulating material 118 is all co-layered with second waveguide layer 114, and these two different ways may be set by those skilled in the art according to practical situations, thereby improving the tolerance of laser 10 during fabrication.
In one implementation of an embodiment of the present application, the ratio of the thickness of index-adjusting material 118 co-layer with second waveguide layer 114 to the thickness of second waveguide layer 114 is between 0.05-1.
The second waveguide layer 114 extends from the bottom of the groove 117, where the specific position of the groove bottom can be set by a person skilled in the art according to the actual situation, the groove bottom of the groove 117 is filled with the refractive index adjusting material 118, and the ratio of the thickness of the same layer of the refractive index adjusting material 118 and the second waveguide layer 114 to the thickness of the second waveguide layer 114 is between 0.05 and 1, so that the thickness of the same layer of the refractive index adjusting material 118 and the second waveguide layer 114 is thicker, and thus, the adjustment of the equivalent refractive index difference of the refractive index adjusting material 118 is more obvious, and the reduction of the lateral divergence angle is more facilitated.
Optionally, index-adjusting material 118 is partially co-layered with second waveguide layer 114, and index-adjusting material 118 has a thickness between 0.05 μm and 3 μm.
In one realisable form of embodiment of the application the width of the bar grooves 117 is between 10-50 μm.
The bottom of the stripe groove 117 is filled with a refractive index adjusting material 118, the width of the refractive index adjusting material 118 is the same as that of the stripe groove 117, and a wider width is provided to facilitate the adjustment of the equivalent refractive index difference of the refractive index adjusting material 118, but too wide a width can reduce the space between the two stripe grooves 117 to affect normal current injection, and based on the consideration of the above two aspects, the embodiment of the present application sets the width of the stripe groove 117 to be between 10 and 50 μm.
Optionally, the refractive index adjusting material is further filled with a conductive material, and an insulating layer 123 is further disposed between the conductive material and the side wall of the bar-shaped groove 117 and between the conductive material and the refractive index adjusting material, and the conductive material and the electrode layer 116 are deposited in the same layer as an electrical connection member of the laser 10.
Depositing the conductive material in the same layer as electrode layer 116 can reduce the number of fabrication steps during fabrication of laser 10 and simplify fabrication of laser 10.
In one implementation of an embodiment of the present application, the index of refraction modulating material 118 is a dielectric material or an intrinsic semiconductor material.
The stripe grooves 117 are respectively disposed on two sides of the electrode layer 116 along the first direction, and another purpose is to limit current to be transmitted downwards along the electrode layer 116 in a region between the stripe grooves 117 on two sides and in the direction of the contact layer 115.
It should be noted that the dielectric material or the intrinsic semiconductor material is not a limitation of the refractive index adjusting material 118 of the present application, and those skilled in the art may select a material having a larger insulation property and a larger refractive index as the refractive index adjusting material according to practical situations.
Optionally, the index of refraction modulating material 118 is intrinsic silicon, and/or intrinsic germanium. Intrinsic silicon and intrinsic germanium are commonly used semiconductor materials that have high insulation and a high refractive index when undoped.
In one implementation manner of the embodiment of the present application, the first waveguide layer 112 is an N waveguide layer, the second waveguide layer 114 is a P waveguide layer, a buffer layer 119 and an N cladding layer 120 are further disposed between the substrate 111 and the N waveguide layer, the buffer layer 119 contacts the substrate 111, and a P cladding layer 121 is further disposed between the P waveguide layer and the contact layer 115.
The first waveguide layer 112 is set to be an N waveguide layer, and the second waveguide layer 114 is set to be a P waveguide layer, so that the substrate 111 of the laser 10 is also set to be an N type, the resistance of the whole device is reduced, and meanwhile, the thickness of a part of the active layer 113 away from the substrate 111 side is reduced, and the heat dissipation capability of the laser 10 after flip-chip bonding is improved.
A buffer layer 119 and an N cladding layer 120 are further disposed between the substrate 111 and the N waveguide layer, the buffer layer 119 is in contact with the substrate 111, a P cladding layer 121 is further disposed between the P waveguide layer and the contact layer 115, and the refractive index of the N cladding layer 120 is smaller than that of the N waveguide layer, so that total reflection is formed on one side of the N waveguide layer close to the N cladding layer 120; also, the P cladding layer 121 has a refractive index smaller than that of the P cladding layer 121 to form total reflection at a side of the P waveguide layer near the P cladding layer 121, and the buffer layer 119 serves to mitigate lattice and thermal mismatch between the substrate 111 and the N cladding layer 120.
It should be noted that, the first waveguide layer 112 is provided as an N waveguide layer, the second waveguide layer 114 is provided as a P waveguide layer, and those skilled in the art may also provide the first waveguide layer 112 as a P waveguide layer, the second waveguide layer 114 as an N waveguide layer, and the refractive index adjusting material 118 disposed on the N waveguide layer correspondingly, for adjusting the refractive index difference of the plane in which the N waveguide layer is located.
The embodiment of the application also discloses a preparation method of the laser 10, which is used for preparing the laser 10, as shown in fig. 6, and comprises the following steps:
s10: providing a semiconductor epitaxial wafer, wherein the semiconductor epitaxial wafer comprises a substrate 111, a first waveguide layer 112, an active layer 113, a second waveguide layer 114 and a contact layer 115 which are sequentially arranged on the substrate 111;
specific process steps for preparing the semiconductor epitaxial wafer are not limited in the embodiment of the application, and chemical or physical vapor deposition layer by layer can be adopted as an example.
Specifically, similar to the laser 10 described above, the first waveguide layer 112 is an N waveguide layer, the second waveguide layer 114 is a P waveguide layer, a buffer layer 119 and an N cladding layer 120 are further disposed between the substrate 111 and the N waveguide layer, the buffer layer 119 contacts the substrate 111, a P cladding layer 121 is further disposed between the P waveguide layer and the contact layer 115, and another electrode layer 116 is further connected to a side of the substrate 111 away from the buffer layer 119.
S20: forming a bar-shaped groove 117 from two opposite sides of the contact layer 115 along the first direction towards the direction of the substrate 111, wherein the bar-shaped groove 117 extends along the second direction, and the bottom of the bar-shaped groove 117 extends to the second waveguide layer 114;
specifically, as with the laser 10 described above, the width of the stripe groove 117 is between 10 and 50 μm, and the depth of the stripe groove 117 is between 0.5 and 3 μm.
S30: the stripe grooves 117 are filled with a refractive index adjusting material 118, wherein at least a part of the refractive index adjusting material 118 is in the same layer as the second waveguide layer 114;
specifically, index-modifying material 118 may be partially higher than second waveguide layer 114 and partially co-layered with second waveguide layer 114. The ratio of the thickness of index-adjusting material 118 to the thickness of second waveguide layer 114 is between 0.05-1 so that index-adjusting material 118 is able to further raise the index of refraction on both sides of the plane in which second waveguide layer 114 lies.
S40: an insulating layer 123 is provided in the bar-shaped groove 117, the insulating layer 123 covering the upper surface of the refractive index adjusting material 118 and the side walls of the bar-shaped groove 117;
s50: a metal material is deposited on the contact layer 115 to form an electrode layer 116, the metal material filling the stripe grooves 117. The electrode layer 116 is formed while the surface of the laser 10 is made as flat as possible.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. The utility model provides a laser instrument, its characterized in that includes the substrate and set gradually in first waveguide layer, active layer, second waveguide layer, contact layer and electrode layer on the substrate, set up the bar groove on the electrode layer respectively along the opposite both sides of first direction, the bar groove extends along the second direction, just the tank bottom in bar groove extends to the second waveguide layer, the bar tank bottom portion is filled with refractive index adjustment material, refractive index adjustment material is in the refractive index of active layer luminescence wavelength is greater than the refractive index of second waveguide layer, first direction with the second direction is perpendicular.
2. The laser of claim 1, wherein a portion of the index adjusting material is co-layer with the second waveguide layer or is co-layer with the second waveguide layer in its entirety.
3. The laser of claim 2, wherein a ratio of a thickness of the index adjusting material co-layer with the second waveguide layer to a thickness of the second waveguide layer is between 0.05-1.
4. The laser of claim 1, wherein the index modifying material is partially co-layered with the second waveguide layer, and the stripe grooves have a depth of between 0.5-3 μm.
5. A laser as claimed in claim 3, wherein the width of the stripe grooves is between 10-50 μm.
6. The laser of claim 1, wherein the refractive index adjusting material is further filled with a conductive material, an insulating layer is further disposed between the conductive material and the side wall of the stripe-shaped groove and the refractive index adjusting material, and the conductive material and the electrode layer are deposited in the same layer as an electrical connector of the laser.
7. The laser of claim 6, wherein the index-adjusting material is a dielectric material or an intrinsic semiconductor material.
8. The laser of claim 7, wherein the index-adjusting material is intrinsic silicon and/or intrinsic germanium.
9. The laser of claim 1, wherein the first waveguide layer is an N waveguide layer, the second waveguide layer is a P waveguide layer, a buffer layer and an N cladding layer are further disposed between the substrate and the N waveguide layer, the buffer layer is in contact with the substrate, and a P cladding layer is further disposed between the P waveguide layer and the contact layer.
10. A method of producing a laser, characterized in that it is used for producing a laser according to any one of claims 1 to 9, comprising:
providing a semiconductor epitaxial wafer, wherein the semiconductor epitaxial wafer comprises a substrate, a first waveguide layer, an active layer, a second waveguide layer and a contact layer which are sequentially arranged on the substrate;
forming strip-shaped grooves on the contact layer along the direction of the substrate at two opposite sides of the contact layer along the first direction, wherein the strip-shaped grooves extend along the second direction, and the bottoms of the strip-shaped grooves extend to the second waveguide layer;
the strip-shaped groove is filled with a refractive index adjusting material, wherein at least a part of the refractive index adjusting material and the second waveguide layer are in the same layer;
an insulating layer is arranged in the strip-shaped groove, and the insulating layer covers the upper surface of the refractive index adjusting material and the side wall of the strip-shaped groove;
and depositing a metal material on the contact layer to form an electrode layer, wherein the metal material fills the strip-shaped grooves.
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| CN118232164A (en) * | 2024-05-24 | 2024-06-21 | 中国科学院西安光学精密机械研究所 | Method for realizing lateral far-field flat-top light intensity distribution of high-power semiconductor laser |
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| CN118232164A (en) * | 2024-05-24 | 2024-06-21 | 中国科学院西安光学精密机械研究所 | Method for realizing lateral far-field flat-top light intensity distribution of high-power semiconductor laser |
| CN118232164B (en) * | 2024-05-24 | 2024-10-01 | 中国科学院西安光学精密机械研究所 | Method for realizing lateral far-field flat-top light intensity distribution of high-power semiconductor laser |
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