CN117239015A - Chip transfer method and display panel manufacturing method - Google Patents
Chip transfer method and display panel manufacturing method Download PDFInfo
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- CN117239015A CN117239015A CN202210637836.7A CN202210637836A CN117239015A CN 117239015 A CN117239015 A CN 117239015A CN 202210637836 A CN202210637836 A CN 202210637836A CN 117239015 A CN117239015 A CN 117239015A
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- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 161
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 95
- 230000001678 irradiating effect Effects 0.000 claims abstract description 13
- 239000012790 adhesive layer Substances 0.000 claims description 19
- 230000000903 blocking effect Effects 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000003086 colorant Substances 0.000 claims description 9
- 238000000354 decomposition reaction Methods 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
The application relates to a chip transfer method and a display panel manufacturing method. The chip transferring method comprises providing a chip growth substrate on which a chip to be transferred is grown; selectively irradiating the chip growth substrate by laser to decompose a part of the area of the gallium nitride bonding surface between the chip to be transferred and the chip growth substrate; irradiating the chip growth substrate with laser to decompose the remaining gallium nitride bonding surface so as to enable the chip to be transferred to fall off from the chip growth substrate; before the laser irradiates the chip growth substrate to decompose the rest gallium nitride bonding surface, the chip growth substrate is aligned to the receiving substrate, and after the transferred chip is detached from the chip growth substrate, the transferred chip falls onto the receiving substrate. When the chip to be transferred is transferred, the stable posture is easier to keep and naturally falls, the possibility of inclination, side standing, even overturning and the like is reduced, and the transfer yield of the chip is ensured.
Description
Technical Field
The application relates to the field of chip transfer, in particular to a chip transfer method and a display panel manufacturing method.
Background
In manufacturing a display device using small-sized LEDs (Light Emitting Diode, light emitting diodes) such as a Mini LED (Mini Light Emitting Diode, sub-millimeter light emitting diode) display panel, a Micro LED (Micro Light Emitting Diode ) display panel, etc., it is necessary to transfer a light emitting chip onto a carrier plate of a receiving chip by transfer.
In order to improve the efficiency of chip transfer, some technologies adopt a mode of transferring the light emitting chip to the receiving substrate in a suspended manner, however, the yield of the transfer mode is not high, and the light emitting chip is easy to incline, stand aside or even turn over when falling.
Therefore, how to ensure the stability of the suspended transfer of the chip is a problem to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings of the related art, the present application is directed to a chip transferring method and a display panel manufacturing method, which aim to solve the problems of easy tilting, side standing and even turning of the suspended transfer of the chip.
A chip transfer method, comprising:
providing a chip growth substrate, wherein a chip to be transferred grows on the chip growth substrate;
selectively irradiating the chip growth substrate by laser to decompose a part of the area of the gallium nitride bonding surface between the chip to be transferred and the chip growth substrate;
irradiating the chip growth substrate with laser to decompose the rest gallium nitride bonding surface so as to enable the chip to be transferred to fall off from the chip growth substrate;
before the laser irradiates the chip growth substrate to decompose the rest gallium nitride bonding surface, the chip growth substrate is aligned to a receiving substrate, and the chip to be transferred falls onto the receiving substrate after falling off from the chip growth substrate.
According to the chip transferring method, a part of gallium nitride bonding surfaces on the chip to be transferred are decomposed through laser selectively, the residual gallium nitride bonding surfaces are relatively less at the moment before the chip to be transferred falls off, in the process, the amount of nitrogen generated by decomposing gallium nitride is less, the impact which can be formed by the chip to be transferred is correspondingly weakened, and therefore, the chip to be transferred is easier to keep stable posture and naturally fall off when falling off. The possibility of tilting, standing or even turning the chip to be transferred in the falling process is reduced, and the transfer yield of the chip is ensured. In addition, for the production of the chip to be transferred and the chip growth substrate, other additional structures are not required to be formed, the control can be realized based on the current common chip growth structure, and no additional burden is added for the production of the chip growth substrate.
Optionally, after the laser selectively irradiates the chip growth substrate, the remaining gallium nitride bonding surface is symmetrical about at least one axis of the chip to be transferred.
The rest gallium nitride bonding surface is distributed in balance on the chip to be transferred, and when the chip to be transferred is separated from the chip growth substrate, the balanced posture can be kept to fall, so that the transfer yield is ensured.
Optionally, the selectively irradiating the chip growth substrate with the laser to decompose a portion of a region of a gallium nitride bonding surface between the chip to be transferred and the chip growth substrate includes:
providing a mask, wherein the mask comprises a light blocking area and a light transmitting area corresponding to each chip to be transferred;
the mask is arranged between the chip growth substrate and the laser light source, and each chip to be transferred is opposite to at least one light blocking area and at least one light transmitting area;
and enabling the first laser beam to irradiate each chip to be transferred through the light-transmitting area so as to decompose the part of the gallium nitride bonding surface corresponding to the light-transmitting area.
The mask enables laser to selectively penetrate, so that the control precision requirement on a laser light source is reduced, and the laser mask can adapt to more laser environments.
Optionally, an adhesive layer is disposed on the receiving substrate, and aligning the chip growth substrate with the receiving substrate includes making the chip to be transferred opposite to a surface of the receiving substrate on which the adhesive layer is disposed, where the chip to be transferred falls onto the adhesive layer after falling off from the chip growth substrate.
After the transferred chip falls off from the chip growth substrate, the transferred chip falls onto the adhesive layer. Because the viscosity of the adhesive layer can be directly and primarily adhered after the chip to be transferred falls, the chip is not easy to generate displacement after touching the receiving substrate, and the accuracy and the yield of transfer are ensured.
Optionally, the adhesive glue layer comprises anisotropic conductive glue, the receiving substrate comprises a die bonding area, and the anisotropic conductive glue is arranged on one surface of the receiving substrate provided with the die bonding area;
the aligning the chip growth substrate with the receiving substrate further comprises aligning the chip to be transferred with the die bonding area;
after the chip to be transferred falls onto the receiving substrate, the method further comprises:
and bonding the chip to be transferred to the die bonding area.
The chip to be transferred is directly transferred onto the die bonding area by the transfer method, only one transfer is needed, other intermediate transfer steps are not needed, and adverse conditions are likely to occur during each transfer operation, so that the transfer frequency is reduced, the chip transfer efficiency is improved, and the chip transfer yield is also ensured.
Based on the same inventive concept, the application also provides a manufacturing method of the display panel, comprising the following steps:
providing a first light emitting chip growth substrate on which a first light emitting chip is grown, and selectively transferring at least part of the first light emitting chips on the first light emitting chip growth substrate to a first area of a circuit board according to a preset pixel arrangement position by the chip transfer method;
providing a second light-emitting chip growth substrate on which a second light-emitting chip is grown, and selectively transferring at least part of the second light-emitting chips on the second light-emitting chip growth substrate to a second region of a circuit board according to a predetermined pixel arrangement position by the chip transfer method;
providing a third light-emitting chip growth substrate on which a third light-emitting chip is grown, and selectively transferring at least part of the third light-emitting chips on the third light-emitting chip growth substrate to a third region of a circuit board according to a predetermined pixel arrangement position by the chip transfer method;
the colors of the first light emitting chip, the second light emitting chip and the third light emitting chip are different from each other.
The manufacturing method of the display panel adopts the chip transferring method to transfer the chips, so that the stability of transferring the light-emitting chips and the overall yield of the display panel are ensured in the process of manufacturing the display panel.
Drawings
Fig. 1 is a basic flow diagram of a chip transferring method according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a chip growth substrate and a chip to be transferred according to an embodiment of the present application;
FIG. 3 is a schematic diagram of decomposing a GaN bonding surface by laser irradiation according to an embodiment of the application;
FIG. 4 is a schematic illustration of the gallium nitride bonding surface of FIG. 3 after decomposition;
FIG. 5 is a schematic illustration of the remaining gallium nitride junction in FIG. 4 exploded;
FIG. 6 is a schematic diagram of a set mask according to an embodiment of the present application;
fig. 7 is a schematic flow chart of implementing chip transfer by using a mask plate according to an embodiment of the present application;
FIG. 8 is a schematic view of the mask plate of FIG. 6 after being moved;
FIG. 9 is a schematic diagram of a remaining GaN bonding surface according to an embodiment of the application;
FIG. 10 is a schematic top view of FIG. 9;
FIG. 11 is a schematic view of another remaining GaN bonding surface according to an embodiment of the application;
FIG. 12 is a schematic diagram of a mask arrangement according to an embodiment of the present application;
FIG. 13 is a second schematic diagram of mask arrangement according to an embodiment of the present application;
fig. 14 is a schematic view of a receiving substrate provided with an adhesive layer according to an embodiment of the present application;
fig. 15 is a schematic view showing that a chip to be transferred falls onto an adhesive layer according to an embodiment of the present application;
FIG. 16 is a schematic diagram of a bonding chip to be transferred according to an embodiment of the present application;
FIG. 17 is a schematic flow chart of a method for fabricating a display panel according to an embodiment of the present application;
reference numerals illustrate:
1-a chip to be transferred; 11-gallium nitride bonding surface; 2-a chip growth substrate; 3-receiving a substrate; 31-an adhesive layer; 32-a die bonding area; 33-bonding pads; 4-mask plate; 5-plate; l1-a first laser beam; l2-second laser beam.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. The drawings illustrate preferred embodiments of the application. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
At present, the yield rate of the mode of suspending and transferring the light-emitting chip to the receiving substrate is not high when the chip is transferred.
Based on this, the present application is intended to provide a solution to the above technical problem, the details of which will be described in the following examples.
Examples:
the present embodiment provides a chip transferring method, as shown in fig. 1, including:
s102, providing a chip growth substrate;
the chip to be transferred 1 is grown on the chip growth substrate 2, and in this embodiment, the chip to be transferred 1 may be various LED chips, for example, mini LED chips, micro LED chips, etc.; however, in practical application, the chip transfer method of the present embodiment is equally applicable to other chips as long as the chips need to be peeled off from the chip growth substrate 2 by laser decomposition of gallium nitride.
As shown in fig. 2, the area where the chip 1 to be transferred contacts the chip growth substrate 2 is a layer of gallium nitride structure, the layer of gallium nitride structure where the chip 1 to be transferred contacts the chip growth substrate 2 is a gallium nitride bonding surface 11, and the layer of gallium nitride structure is currently generally used as a buffer layer between the light emitting chip and the chip growth substrate 2 in the light emitting chip. The chip growth substrate 2 is a semiconductor material on which a chip can be grown, including but not limited to sapphire, silicon carbide, silicon, gallium arsenide, and the like.
S104, selectively irradiating the chip growth substrate by laser to decompose a part of the area of the gallium nitride bonding surface;
the laser light is irradiated to the gallium nitride bonding face 11 through the chip growth substrate 2, and sufficient heat is generated at the gallium nitride bonding face 11 to decompose gallium nitride into metallic gallium and nitrogen gas. In practical applications, the laser is usually at a higher power and can generate enough heat, but the time of action is shorter, so that the gallium nitride bonding surface 11 can be decomposed without damaging the core region of the chip.
It should be noted that the laser selective irradiation means that the region where the laser light acts on the chip growth substrate 2 is local, that is, the gallium nitride bonding surface 11 of each chip 1 to be transferred is not decomposed entirely and simultaneously. As shown in fig. 3 and 4, in this embodiment, the laser irradiates a part of the area of the gallium nitride bonding surface 11 of the chip 1 to be transferred, and a part of the gallium nitride on the chip 1 to be transferred is decomposed by the laser. Generally, laser light is irradiated from a side of the chip growth substrate 2 where the chip 1 to be transferred is not grown, and is irradiated through the chip growth substrate 2 to a region between the chip growth substrate 2 and the chip 1 to be transferred.
It should be noted that after the laser light is selectively irradiated, the chip 1 to be transferred remains on the chip growth substrate 2 through the remaining gallium nitride bonding surface 11. That is, in the chip conversion method of the present embodiment, a part of the gallium nitride bonding surface 11 of the chip 1 to be transferred is decomposed, so as to reduce the residual amount of gallium nitride on the chip 1 to be transferred.
S106, irradiating the chip growth substrate with laser to decompose the rest gallium nitride bonding surface;
as shown in fig. 5, the remaining gallium nitride bonding surface 11 between the chip 1 to be transferred and the chip growth substrate 2 is completely decomposed, and there is no bonded structure between the chip 1 to be transferred and the chip growth substrate 2, so that the chip 1 to be transferred is detached from the chip growth substrate 2.
In the conventional process of separating the chip from the chip growth substrate 2, nitrogen generated by decomposition of gallium nitride impacts the chip. When the chip 1 to be transferred is suspended and falls off, the impact of the nitrogen on the chip 1 to be transferred may cause the chip to tilt, stand sideways or even turn over.
By selectively decomposing a part of the gallium nitride bonding surface 11 on the chip 1 to be transferred through laser, the rest gallium nitride bonding surface 11 is relatively less at the moment before the chip 1 to be transferred falls off, in the process, the amount of nitrogen generated by decomposing gallium nitride is less, and the impact which can be formed by the chip 1 to be transferred is correspondingly weakened, so that the chip 1 to be transferred is easier to keep stable posture and naturally falls off when falling off. The possibility of tilting, standing or even turning the chip 1 to be transferred in the falling process is reduced, and the transfer yield of the chip is ensured. In addition, for the chip transfer of the embodiment, no additional structure is required for the manufacture of the chip 1 to be transferred and the chip growth substrate 2, and the chip transfer can be controlled based on the current common chip growth structure without adding additional burden to the manufacture of the chip growth substrate 2.
It will be appreciated that, in order to achieve transfer of the chip to the receiving substrate 3, step S105 is further included before the laser irradiates the chip growth substrate 2 to decompose the remaining gallium nitride bonding surface 11.
S105, aligning the chip growth substrate with the receiving substrate;
for example, as shown in fig. 5, after the chip 1 to be transferred falls off from the chip growth substrate 2, the chip falls onto the receiving substrate 3, that is, the side of the chip growth substrate 2 with the chip 1 to be transferred is close to the receiving substrate 3, and the receiving substrate 3 is disposed under the chip growth substrate 2, and when the chip 1 to be transferred falls, the chip falls mainly under gravity.
This step may be performed at any time before the chip 1 to be transferred is detached, for example, before the aforementioned step S104 or step S106, under reasonably non-conflicting conditions.
The chip 1 to be transferred is equivalent to undergoing at least two stages of peeling, wherein the first stage decomposes the partial gallium nitride bonding surface 11 on the chip 1 to be transferred and the second stage decomposes the remaining portion.
In these examples, the gallium nitride bonding surface 11 of the chip 1 to be transferred may be decomposed by means of laser irradiation twice. In the first laser irradiation, a part of the gallium nitride bonding surface 11 is selectively treated, and in the second laser irradiation, the rest of the gallium nitride bonding surface 11 is decomposed, that is, the two laser irradiation ranges are different, but the intersection of the two laser irradiation regions can completely cover the whole gallium nitride bonding surface 11. For example, the second laser may selectively irradiate the remaining gallium nitride bonding surface 11 region, as reflected in fig. 5, in which the accuracy of the laser irradiation is not high, only to ensure that the remaining gallium nitride bonding surface 11 is completely irradiated. The second laser can be simply set to completely irradiate all the regions, so that the remaining gallium nitride bonding surface 11 can be ensured to be irradiated as well. Parameters such as intensity and time of the two laser shots can be adjusted according to actual conditions, and the two laser shots can be identical or different. In practical application, the gallium nitride bonding surfaces 11 in different areas on the same chip 1 to be transferred are relatively consistent, and the same laser can be adopted for carrying out two times of irradiation, and only the irradiation range of the laser needs to be controlled in the process.
If the laser light source is capable of providing a light beam of a sufficiently small range and corresponding accuracy, the irradiation range of the laser light can be controlled directly by the laser light source side. Selective laser irradiation can also be achieved by controlling the area to which laser light can be irradiated. In the manner shown in fig. 6, a mask is provided before the laser light source and the chip growth substrate 2, the mask may be provided close to or in close proximity to the chip growth substrate 2, and the laser light may irradiate only a partial region through the mask.
Illustratively, as shown in fig. 7, the laser selectively irradiating the chip growth substrate 2 to decompose a part of the region of the gallium nitride bonding surface 11 between the chip 1 to be transferred and the chip growth substrate 2 includes:
s202, providing a mask;
the mask includes light blocking regions (filled portions in the figure) corresponding to the chips 1 to be transferred (filled portions in the figure in the mask) and light transmitting regions (filled portions in the figure in the mask). The mask can be a plate-shaped mask plate 4, the mask plate 4 is arranged between the chip growth substrate 2 and the laser light source, and the light-transmitting area of the mask can be made of a light-transmitting material, namely a material which does not absorb laser, or a structure in which the light-transmitting area can be hollowed out. The mask may also be a temporary mask layer formed on the chip growth substrate 2, for example, a photoresist is provided on the side of the chip growth substrate 2 where the chip is not grown and patterned into a pattern required for the mask.
S204, a mask is arranged between the chip growth substrate and the laser light source;
as shown in fig. 6, each chip 1 to be transferred is opposite to at least one light blocking area and at least one light transmitting area, and in this state, a part of the area of each chip 1 to be transferred may be irradiated with laser light, and a part of the area of the chip may be blocked from being irradiated with laser light.
S206, enabling the first laser beam to irradiate each chip to be transferred through the light transmission area so as to decompose the part of the gallium nitride bonding surface corresponding to the light transmission area;
the first laser beam L1 is irradiated for the first time, so that the portion of the gallium nitride bonding surface 11 to which the light-transmitting region is aligned is decomposed.
In order to remove the remaining gallium nitride bonding surface 11, the following steps may be further included:
s208, removing the mask;
i.e. the mask plate 4 is taken away or the mask layer on the chip growth substrate 2 is removed. It will be appreciated that the laser is typically turned off during this process.
S210, enabling a second laser beam to irradiate the band transfer chip so as to decompose the rest gallium nitride bonding surface;
the second laser beam L2 is irradiated for the second time, the second laser beam L2 may be the same as the first laser beam L1, and the irradiation ranges of the first laser beam L1 and the second laser beam L2 in this embodiment may completely cover the chip growth substrate 2, that is, in the process of transferring the chip, only simple irradiation is required for the two lasers, and the control requirement for the laser source is not high. It will be seen that references herein to "first" and "second" of the first and second laser beams L1 and L2 are intended to distinguish between the first and second shots and are not intended to be limiting of the laser light itself. When the mask is removed, the gallium nitride bonding surface 11 which is blocked by the mask and not decomposed is exposed to the irradiation of the laser, and the remaining gallium nitride bonding surface 11 is decomposed by the second laser beam L2.
It can be understood that in the foregoing implementation process, the two stages of peeling the chip 1 to be transferred implement decomposition and removal of the gallium nitride bonding surface 11 in different areas by setting a mask and removing the mask respectively. In the above-mentioned two-stage decomposition process of the gallium nitride junction surface 11, the laser light is irradiated twice, and the interval between the two times is mainly used for facilitating removal of the mask. In this embodiment, the two stages of peeling the chip 1 to be transferred are mainly to decompose the gan bonding surfaces 11 in different areas for different times, and the remaining gan bonding surfaces 11 are only required to be exposed to the irradiation of the laser, so that the number of laser shots is not a necessary control condition. In other implementation processes, only one irradiation of laser may be adopted in the process of peeling the chip 1 to be transferred, and the area of the gallium nitride bonding surface 11 irradiated by the laser may be dynamically adjusted to also realize peeling of the chip 1 to be transferred in at least two stages.
As an example, the first half stage in this example is the same as the previous example, and the partial region decomposition is performed on the gallium nitride bonding surface 11 by providing the mask plate 4, except that this example, after decomposing the gallium nitride bonding surface 11 of the chip 1 to be transferred, moves the relative position of the mask and the chip growth substrate 2 so that the light transmitting region exposes the remaining gallium nitride bonding surface 11 to the beam of the laser light.
As shown in fig. 8, the mask plate 4 is controlled to move on the basis of fig. 6, and the present example translates to the left, so that the position of the light-transmitting region of the mask plate 4 is changed, and the position of the gallium nitride bonding surface 11, which is originally blocked by the light-blocking region and is not irradiated with laser light, is aligned with the light-transmitting region. At this time, the portion of the gan bonding surface 11 newly aligned with the light-transmitting region starts to be decomposed, and finally, all of the gan bonding surface 11 is decomposed, and the chip 1 to be transferred is detached from the chip growth substrate 2. In this example, although the laser is continuously irradiated, the mask plate 4 is subjected to at least two stages of position control, so that a part of the gallium nitride bonding surface 11 is preferentially decomposed, the gas impact received before the chip 1 to be transferred is detached later is reduced, and the detachment stability of the chip 1 to be transferred is ensured. Since the laser irradiation process is continuous, in this example, the chip growth substrate 2 may be aligned with the receiving substrate 3 first, and the laser decomposition of the gallium nitride bonding surface 11 is completed consecutively, with the chip 1 to be transferred falling directly onto the receiving substrate 3.
In order to further ensure stable posture of the chip 1 to be transferred, the gallium nitride bonding surface 11 may be uniformly distributed on the chip 1 to be transferred when the gallium nitride bonding surface 11 is decomposed, for example, may be symmetrically distributed.
In some embodiments, after the mask is provided, the projection of the mask corresponding to the light-transmitting region of each chip 1 to be transferred onto the gallium nitride bonding surface 11 is symmetrical with respect to at least one axis of the gallium nitride bonding surface 11. That is, after the end of the gallium nitride bonding surface 11 in the first stage, the remaining gallium nitride bonding surface 11 is symmetrical, and since the gallium nitride bonding surface 11 is also the size of the chip 1 to be transferred, the remaining gallium nitride bonding surface 11 is actually symmetrical about the axis on the chip 1 to be transferred. For example, the cross section of the chip 1 to be transferred is generally rectangular or approximately rectangular in shape, and the axis may be the axis of any symmetry axis of the chip 1 to be transferred, such as the axis in the length direction and the width direction of the cross section of the chip 1 to be transferred.
In the examples shown in fig. 4 or 8, the remaining gallium nitride bonding surface 11 is the region in the center of the chip 1 to be transferred, and this region may be any symmetrical shape, such as a circle or a square. The rest gallium nitride bonding surface 11 in the central area is not easy to deviate, turn over and the like even if the chip 1 to be transferred generates gas impact and the gas impact received by the chip 1 to be transferred is opposite to the middle.
In the examples shown in fig. 9 and 10, there are two locations on the remaining gan bonding surface 11 of the single chip 1 to be transferred, which are respectively close to two opposite sides of the chip 1 to be transferred, wherein fig. 10 is a schematic top view of fig. 9, and the top view direction of this example can be understood as the direction of eyes looking in the same direction as the direction of laser irradiation. The two gallium nitride bonding surfaces 11 are close to two sides of the chip 1 to be transferred in the length direction and are symmetrical with respect to the axis of the chip 1 to be transferred in the width direction of the cross section. In the example shown in fig. 11, the remaining gallium nitride bonding surfaces 11 are four areas respectively close to four sides of the chip 1 to be transferred, and the remaining gallium nitride bonding surfaces 11 are more dispersed and distributed uniformly. In practical application, the number of the areas of the gallium nitride bonding surface 11 remained on each chip 1 to be transferred can be arbitrary, but fewer areas are easier to control.
In some examples, the remaining gallium nitride bonding surface 11 is a stripe-shaped region distributed along the axis of the chip 1 to be transferred. The strip-shaped area can extend from the boundary of one side of the chip 1 to be transferred to the boundary of the other side, and the light transmission area and the light blocking area of the mask can be arranged to correspond to the strips of a plurality of chips 1 to be transferred in one row or one column at the same time, so that the control and the manufacture are easy.
Referring to fig. 12, the light transmitting area and the light blocking area of the mask are column-wise stripe-shaped areas arranged at intervals, and each of the light transmitting area and the light blocking area covers a plurality of chips 1 to be transferred. The width of the light transmission area and the light blocking area are one third of the length of the chip 1 to be transferred, and after aligning the chip 1 to be transferred, the center area of the chip 1 to be transferred is aligned with the center of the light blocking area. After laser irradiation, the remaining gallium nitride bonding surface 11 on the chip 1 to be transferred is a stripe-shaped region extending along the length direction thereof, and the stripe-shaped region is distributed along the axis line of the chip 1 to be transferred in the length direction. As shown in fig. 13, the mask is shifted by a distance of one third of the length of the chip 1 to be transferred, which causes the positions of the light transmitting region and the light blocking region corresponding to the chip 1 to be transferred to be exchanged, that is, the position originally aligned with the light transmitting region is changed to be aligned with the light blocking region, and the position originally aligned with the light blocking region is changed to be aligned with the light transmitting region. At this time, the remaining gan bonding surface 11 is exposed to the laser, so that the gan bonding surface 11 can be completely decomposed, and the irradiated region is just blocked from being irradiated by the laser, thereby reducing the exposure time of the region of the chip 1 to be transferred from which the gan bonding surface 11 has been removed to the laser.
The mask shown in fig. 12 or fig. 13 may also be formed into the remaining gan junction surface 11 of other shapes, the center region of the chip 1 to be transferred is aligned with the center of the light-transmitting region, and after laser irradiation in the light-transmitting region, the gan junction surface 11 in the center region of the chip 1 to be transferred is decomposed, and both ends are left, i.e., the order of the mask placement positions of fig. 12 and fig. 13 may be interchanged.
The receiving substrate 3 may be any carrier to which the chip 1 to be transferred is to be transferred, and may be a temporary substrate which temporarily carries the chip, a transfer substrate which assists in transferring the chip, a circuit board to which the chip is bonded, or the like, as classified from the viewpoint of operation.
As shown in fig. 14, an adhesive layer 31 may be disposed on the receiving substrate 3, and aligning the chip growth substrate 2 with the receiving substrate 3 includes making the chip 1 to be transferred opposite to a surface of the receiving substrate 3 provided with the adhesive layer 31, where the chip 1 to be transferred falls onto the adhesive layer 31 after falling off from the chip growth substrate 2. Due to the viscosity of the adhesive layer 31, the chip 1 to be transferred can be directly adhered after falling, and is not easy to generate displacement after touching the receiving substrate 3, thereby ensuring the accuracy and the yield of transfer.
If the chip 1 to be transferred is to be temporarily adhered only, the adhesive layer 31 may be made of an insulating adhesive material. In some examples, the receiving substrate 3 is provided with a die bonding area 32, that is, the receiving substrate 3 is a circuit board capable of bonding chips, and in order to ensure better conductive connection and achieve fixation, the adhesive layer 31 may be anisotropic conductive adhesive, and the anisotropic conductive adhesive can conduct unidirectional electricity in a vertical direction and glue and fix the chips. As shown in fig. 14, the anisotropic conductive adhesive is disposed on the surface of the receiving substrate 3 with the die bonding region 32, and when the chip growth substrate 2 is aligned to the receiving substrate 3, the chip 1 to be transferred on the chip growth substrate 2 is aligned to the die bonding region 32; as shown in fig. 15, after the chip 1 to be transferred is detached from the chip growth substrate 2, the chip 1 can accurately fall to the area corresponding to the die bonding area 32 and be primarily glued with anisotropic conductive adhesive. After the transferred chip 1 falls onto the receiving substrate 3, it further includes a step of bonding it to the die bonding region 32. In fig. 16, when the chip 1 to be transferred is pressed down, a flat plate 5 can be placed on the chip 1 to be transferred, and all the chips 1 to be transferred which are not pressed down on the receiving substrate 3 are uniformly applied with force through the flat plate 5, so that the chip 1 to be transferred is pressed down until the electrodes of the chip 1 to be transferred are in contact with the bonding pads 33 on the die bonding area 32, the distance between the chip 1 to be transferred and the bonding pads 33 on the receiving substrate is shortened, and meanwhile, conductive particles in the chip 1 to be transferred are extruded to realize conduction; the anisotropic conductive adhesive of the chip 1 to be transferred is solidified by thermal bonding and the like to finish the fixed bonding, the transfer of the chip is also finished, and the flat plate 5 on the chip 1 to be transferred can be removed after the thermal bonding is finished.
The embodiment also provides a method for manufacturing a display panel, as shown in fig. 17, including:
s302, selectively transferring at least part of the first light emitting chips on the first light emitting chip growth substrate to a first area of the circuit board according to a preset pixel arrangement;
s304, selectively transferring at least part of the second light emitting chips on the second light emitting chip growth substrate to a second area of the circuit board according to a preset pixel arrangement;
s306, selectively transferring at least part of the third light-emitting chips on the third light-emitting chip growth substrate to a third area of the circuit board according to a preset pixel arrangement;
the colors of the first light emitting chip, the second light emitting chip and the third light emitting chip are different from each other, for example, the first light emitting chip, the second light emitting chip and the third light emitting chip can be respectively red, green and blue light emitting chips with different colors. It should be noted that the types of light emitting chips of the display panel include, but are not limited to, three, but may be more colors, for example, in some examples, a fourth light emitting chip may be included, and the fourth light emitting chip may be a white, yellow, or other color light emitting chip. It should be noted that the selective transfer in this embodiment adopts the chip transfer method described in the foregoing embodiment, so that stability of the transfer of the light emitting chip and overall yield of the display panel are ensured during the manufacturing process of the display panel based on the effects brought by the foregoing chip transfer method.
The arrangement mode of the first light emitting chips during growth is designed according to the layout of the corresponding first areas on the circuit board. At least three light emitting chips of the first light emitting chip, the second light emitting chip and the third light emitting chip are included in each pixel of the circuit board, the light emitting chips in the pixel of the present example are arranged in parallel, two light emitting chips of other colors are included between every two light emitting chips of the same color along the arrangement direction of the light emitting chips in the pixel, for example, one second light emitting chip and one third light emitting chip are included between two adjacent first light emitting chips. When the first light emitting chips on the first light emitting chip growth substrate 2 are selectively transferred, every two first light emitting chips are separated at intervals, one first light emitting chip is stripped, and the stripped first light emitting chips just correspond to the positions of the circuit board where the first light emitting chips need to be arranged when falling onto the circuit board. According to a similar manner, the second light emitting chips on the first light emitting chip growth substrate 2 are selectively peeled off every two first light emitting chips, each second light emitting chip falls to a position between the two first light emitting chips, and similarly, the third light emitting chip is selectively transferred to a corresponding position. The die bonding region 32 of the circuit board comprises a bonding pad 33, the electrodes of the light emitting chips correspond to the positions of the bonding pad 33, and when the light emitting chips are bonded on the circuit board, the electrodes of the light emitting chips and the bonding pad 33 of the die bonding region 32 form good electric connection relation. The circuit board may further include a driving circuit for driving the light emitting chips, and the driving circuit may be electrically connected to the light emitting chips through pads 33 on the circuit board.
In order to reduce the process steps, after the light emitting chips with various colors fall onto the circuit board, that is, after the corresponding light emitting chips are placed in the die bonding areas 32, all the light emitting chips on the circuit board are bonded uniformly, the whole transfer process is only required to bond once, and the bonding is also possible to damage the light emitting chips due to the high-temperature heating required during bonding, so that the bonding times are reduced, the time of the light emitting chips and the circuit board in a high-temperature state is also reduced, the damage to the light emitting chips or the circuit board caused by the excessive bonding times is avoided, and the manufacturing efficiency is high. In addition, in this example, the anisotropic conductive adhesive layer is disposed on the circuit board, so that the transferred light emitting chips are primarily fixed, and the light emitting chips with other colors are not easily affected when the light emitting chips with other colors are transferred later.
The foregoing transfer process to which the chip transfer method is applicable may be non-selective transfer or selective transfer, that is, all the chips on the chip growth substrate 2 may be transferred, so that all the chips on the chip growth substrate 2 are chips 1 to be transferred, or alternatively, some of the chips on the chip growth substrate 2 may be transferred, so that some of the chips on the chip growth substrate 2 are chips 1 to be transferred. In practical applications, the foregoing chip transfer method may also be applied to transfer of a single-color chip, for example, transfer of a single-color chip on a circuit board, where the circuit board may be applied to specific fields such as illumination, display backlight, and the like.
It is to be understood that the application is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (10)
1. A chip transfer method, comprising:
providing a chip growth substrate, wherein a chip to be transferred grows on the chip growth substrate;
selectively irradiating the chip growth substrate by laser to decompose a part of the area of the gallium nitride bonding surface between the chip to be transferred and the chip growth substrate;
irradiating the chip growth substrate with laser to decompose the rest gallium nitride bonding surface so as to enable the chip to be transferred to fall off from the chip growth substrate;
before the laser irradiates the chip growth substrate to decompose the rest gallium nitride bonding surface, the chip growth substrate is aligned to a receiving substrate, and the chip to be transferred falls onto the receiving substrate after falling off from the chip growth substrate.
2. The chip transfer method of claim 1, wherein the remaining gallium nitride bonding surface is symmetrical about at least one axis of the chip to be transferred after the laser selectively irradiates the chip growth substrate.
3. The method of claim 2, wherein the gallium nitride bonding surface remaining after the laser selectively irradiates the chip growth substrate comprises any one of:
the rest gallium nitride bonding surface is a region in the center of the chip to be transferred;
the rest gallium nitride bonding surfaces are two areas respectively close to two opposite sides of the chip to be transferred;
the rest gallium nitride bonding surfaces are four areas which are respectively close to four sides of the chip to be transferred;
the rest of the gallium nitride bonding surface is a strip-shaped area distributed along the axis of the chip to be transferred.
4. The chip transfer method of claim 1, wherein the laser selectively irradiating the chip growth substrate to decompose a portion of a region of a gallium nitride bonding surface between the chip to be transferred and the chip growth substrate comprises:
providing a mask, wherein the mask comprises a light blocking area and a light transmitting area corresponding to each chip to be transferred;
the mask is arranged between the chip growth substrate and the laser light source, and each chip to be transferred is opposite to at least one light blocking area and at least one light transmitting area;
and enabling the first laser beam to irradiate each chip to be transferred through the light-transmitting area so as to decompose the part of the gallium nitride bonding surface corresponding to the light-transmitting area.
5. The chip transfer method of claim 4, wherein the irradiating the chip growth substrate with the laser to decompose the remaining gallium nitride bonding surface comprises:
removing the mask;
and enabling a second laser beam to irradiate the chip to be transferred so as to decompose the rest gallium nitride bonding surface.
6. The chip transfer method of claim 4, wherein the irradiating the chip growth substrate with the laser to decompose the remaining gallium nitride bonding surface comprises:
and moving the relative position of the mask and the chip growth substrate to enable the light-transmitting area to expose the rest gallium nitride bonding surface to the first laser beam to complete decomposition.
7. The method of any one of claims 1-6, wherein the receiving substrate has an adhesive layer thereon, and the aligning the chip growth substrate with the receiving substrate includes positioning the chip to be transferred opposite to a surface of the receiving substrate having the adhesive layer thereon, and the chip to be transferred falls onto the adhesive layer after falling off from the chip growth substrate.
8. The chip transfer method of claim 7, wherein the adhesive layer comprises anisotropic conductive adhesive, the receiving substrate comprises a die bonding region, and the anisotropic conductive adhesive is disposed on a surface of the receiving substrate provided with the die bonding region;
the aligning the chip growth substrate with the receiving substrate further comprises aligning the chip to be transferred with the die bonding area;
after the chip to be transferred falls onto the receiving substrate, the method further comprises:
and bonding the chip to be transferred to the die bonding area.
9. The method of chip transfer according to claim 8, wherein bonding the chip to be transferred to the die bonding region comprises:
pressing down the chip to be transferred to enable an electrode of the chip to be transferred to be in contact with an electrode on the die bonding area;
and solidifying the anisotropic conductive adhesive to fix the chip to be transferred.
10. A method for manufacturing a display panel, comprising:
providing a first light emitting chip growth substrate on which a first light emitting chip is grown, and selectively transferring at least part of the first light emitting chip on the first light emitting chip growth substrate to a first region of a circuit board according to a predetermined pixel arrangement position by the chip transfer method of any one of claims 1 to 9;
providing a second light-emitting chip growth substrate on which a second light-emitting chip is grown, and selectively transferring at least part of the second light-emitting chips on the second light-emitting chip growth substrate to a second region of a circuit board according to a predetermined pixel arrangement position by the chip transfer method of any one of claims 1 to 9;
providing a third light-emitting chip growth substrate on which a third light-emitting chip is grown, and selectively transferring at least part of the third light-emitting chips on the third light-emitting chip growth substrate to a third region of a circuit board according to a predetermined pixel arrangement position by the chip transfer method of any one of claims 1 to 9;
the colors of the first light emitting chip, the second light emitting chip and the third light emitting chip are different from each other.
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| CN202210637836.7A CN117239015A (en) | 2022-06-07 | 2022-06-07 | Chip transfer method and display panel manufacturing method |
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| CN202210637836.7A CN117239015A (en) | 2022-06-07 | 2022-06-07 | Chip transfer method and display panel manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117516707A (en) * | 2024-01-04 | 2024-02-06 | 上海聚跃检测技术有限公司 | Gallium arsenide chip mounting test structure and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117516707A (en) * | 2024-01-04 | 2024-02-06 | 上海聚跃检测技术有限公司 | Gallium arsenide chip mounting test structure and method |
| CN117516707B (en) * | 2024-01-04 | 2024-05-14 | 上海聚跃检测技术有限公司 | Gallium arsenide chip mounting test structure and method |
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