CN117233666B - Ferroelectric material testing system and testing method thereof - Google Patents
Ferroelectric material testing system and testing method thereof Download PDFInfo
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Abstract
A ferroelectric material testing system and a testing method thereof belong to the technical field of ferroelectric material measurement. In order to solve the problem of automatic measurement of the performance of the ferroelectric material, the testing host comprises a main control DSP processor, an analog-to-digital conversion module, a current sampling amplifying circuit and a voltage sampling amplifying circuit; the upper computer is connected with the main control DSP processor, the main control DSP processor is connected with the high-voltage amplifier and the analog-to-digital conversion module, the high-voltage amplifier is connected with the high-low temperature sample clamp device, the high-low temperature sample clamp device is respectively connected with the current sampling amplifying circuit, the voltage sampling amplifying circuit and the current sampling amplifying circuit, and the voltage sampling amplifying circuit is connected with the analog-to-digital conversion module; the high-low temperature sample fixture device comprises an upper shell and a lower shell, wherein an upper electrode is arranged at the central position of the upper shell, a lower electrode is arranged at the central position of the lower shell, a heater is arranged at the inner bottom of the lower shell, and a temperature sensor is arranged in the lower shell. The invention has high measurement accuracy.
Description
Technical Field
The invention belongs to the technical field of ferroelectric material measurement, and particularly relates to a ferroelectric material testing system and a ferroelectric material testing method.
Background
Ferroelectric materials are materials with spontaneous polarization, piezoelectric materials, and information function materials capable of mutually converting mechanical energy and electric energy. The ferroelectric material not only has wide application fields of piezoelectric materials (fields of medical treatment, deep sea, aerospace, nuclear and the like, such as high-performance ultrasonic transducers, sensors, drivers and the like), but also can be applied to the fields of information storage, energy storage, refrigeration, heating and the like due to spontaneous polarization effect. The ferroelectric material which is widely used at present is lead-based material. The application of ferroelectric materials is not separated from the accurate characterization of the spontaneous polarization intensity of the basic properties of the ferroelectric materials, and the ferroelectric properties of the basic materials determine the application potential of the corresponding materials. Therefore, the characterization of the basic properties of the ferroelectric material has important significance for measuring the application potential of the ferroelectric material.
In the use and application process of the ferroelectric material, the characteristics of spontaneous polarization intensity, residual polarization intensity, coercive field, leakage current and the like determine the application potential and the use environment. Currently, the field of ferroelectric materials is a relatively mature research field. However, in the testing process, researchers always can self-group a ferroelectric testing system with specific functions, narrow technical indexes and low accuracy according to a researched material system. Because the current is suddenly changed in the test process of the electric hysteresis loop, a wider current test range and higher current test precision are required, and the test system built by scientific researchers according to the test principle has a narrower current test range and can only meet the test requirement of samples with specific sizes.
Disclosure of Invention
The invention aims to solve the problem of realizing automatic measurement of the performance of a ferroelectric material and provides a ferroelectric material testing system and a ferroelectric material testing method.
In order to achieve the above purpose, the present invention is realized by the following technical scheme:
A ferroelectric material testing system comprises an upper computer, a testing host, a high-voltage amplifier and a high-low temperature sample clamp device;
The test host comprises a main control DSP processor, an analog-to-digital conversion module, a current sampling amplifying circuit and a voltage sampling amplifying circuit;
The upper computer is connected with the main control DSP processor, the main control DSP processor is connected with the high-voltage amplifier and the analog-to-digital conversion module, the high-voltage amplifier is connected with the high-low temperature sample clamp device, the high-low temperature sample clamp device is respectively connected with the current sampling amplifying circuit and the voltage sampling amplifying circuit, and the current sampling amplifying circuit and the voltage sampling amplifying circuit are connected with the analog-to-digital conversion module;
the high-low temperature sample fixture device comprises an upper shell and a lower shell, wherein an upper electrode is arranged at the central position of the upper shell, a lower electrode is arranged at the central position of the lower shell, a heater is arranged at the inner bottom of the lower shell, and a temperature sensor is arranged in the lower shell.
Further, the upper electrode of the high-low temperature sample fixture device is connected with a first wire, the temperature sensor is connected with a second wire, the heater is connected with a third wire, a sample to be tested is placed between the upper electrode and the lower electrode, and the upper shell and the lower shell are in sealing connection after being installed.
The current sampling amplifying circuit adopts a precise rectifying and amplifying mode, 2 paths of ADC are respectively arranged after rectification, the circuit acquires feedback from the output of the diode by combining an operational amplifier and the diode, the operational amplifier compensates the voltage drop on the diode, and the gain of the current amplifying part is 3 times.
Furthermore, the voltage sampling amplifying circuit adopts a precise rectifying and amplifying mode, adopts a mode of directly amplifying a positive signal of the voltage to be measured, sends the positive signal to one path of ADC, rectifies and inverts the negative voltage into positive voltage, and sends the positive voltage to the other path of ADC to realize, and the voltage signal is measured by firstly adopting a resistor network to attenuate, then carrying out precise rectification and gain 1 time amplifying and shaping.
Furthermore, the DAC module of the main control DSP processor generates an excitation signal of the ferroelectric material testing system, the excitation signal is amplified and then is sent to the high-voltage amplifier to excite the tested sample, the measurement of excitation voltage and current is attenuated and amplified and then is converted into a digital signal by the analog-to-digital conversion module, the digital signal is sent to the upper computer through the communication port to be processed and operated, and finally, the ferroelectric hysteresis loop, the saturated polarization intensity, the residual polarization intensity and the coercive field parameters of the ferroelectric material are obtained.
Further, the test items of the test host include a hysteresis loop test, a leakage current test, a FatigueTask fatigue test, a PulseTask monopulse test, an I (V) Task current-bias test, and a leakage and breakdown self-protection function test.
The test method of the ferroelectric material test system is realized by the ferroelectric material test system, and comprises the following steps:
S1, firstly, manufacturing a ferroelectric material sample into a plate capacitor, clamping the ferroelectric material sample between an upper electrode and a lower electrode of a high-low temperature sample clamp device, and then connecting a first wire with a high-voltage amplifier;
s2, setting the areas of the upper electrode and the lower electrode, the thickness of the ferroelectric material sample, test voltage parameters, test voltage period and interval time between the pre-programming and the test voltage, and testing the ferroelectric material;
s3, the upper computer sends out a test instruction to a main control DSP processor in the test host computer through a serial port line, a digital-to-analog converter is driven by the main control DSP processor to excite a set voltage signal to be sent into a high-voltage amplifier, and excitation test is carried out on a ferroelectric material sample after the excitation signal is amplified through the high-voltage amplifier;
S4, the signals after the ferroelectric material sample is tested are returned to the test host, amplified by the current sampling amplifying circuit, and sent to the DSP processor through the analog-to-digital conversion module to analyze the test result.
Further, in step S3, the strongest voltage signal of the excitation signal sent by the test host is a triangular wave signal with peak-to-peak value ±5v, and the excitation signal is obtained by amplifying 1000 times by using a high-voltage amplifier.
Further, the specific implementation method of the step S4 includes the following steps:
s4.1, analyzing and measuring the change relation of a current signal of the ferroelectric material sample excited by a high-voltage signal along with time by an upper computer, and obtaining a calculation expression of the change Q (t) of charges at two ends of the ferroelectric material sample along with time by integrating the change curve of the current along with time, wherein the calculation expression is as follows:
Q(t)＝∫I(t)dt
Wherein I (t) is the current at time t;
s4.2, setting the area of the ferroelectric material sample as A, and calculating the change D (t) of the electric displacement of the ferroelectric material sample along with time, wherein the calculation expression is as follows:
S4.3, after the actual excitation signals at the two ends of the ferroelectric material sample are attenuated by a 1000:1 attenuation circuit of the high-voltage amplifier, the actual excitation signals are sent to a test host to be amplified by a voltage amplifying circuit, and then sent to a DSP processor by an analog-to-digital conversion module to obtain the actual voltages V (t) at the two ends of the ferroelectric material sample, and the thickness h of the ferroelectric material sample is combined, so that the calculation expression of the change E (t) of the electric field intensity at the two ends of the ferroelectric material sample along with time is calculated:
S4.4, calculating the change P (t) of the polarization intensity of the ferroelectric material sample along with time by combining the electric field intensity at two ends of the ferroelectric material sample and the electric displacement at two ends of the ferroelectric material sample, wherein the calculation expression is as follows:
wherein ε 0 is the vacuum dielectric constant;
s4.5, in the test process, the ferroelectric material sample is actually a series effect of capacitance and resistance, and the test result is corrected by considering that the test loop has an equivalent capacitance C 0 and an equivalent resistance R 0, so that a corrected calculation expression is:
Wherein E '(t) is the time-dependent change of the electric field intensity at both ends of the ferroelectric material sample after correction, P' (t) is the time-dependent change of the polarization intensity of the ferroelectric material sample after correction, α (t) is the time-dependent change of the electric field intensity at both ends of the ferroelectric material sample, and β (t) is the time-dependent change of the polarization intensity of the ferroelectric material sample.
The invention has the beneficial effects that:
The ferroelectric material testing system provided by the invention can realize full-automatic testing aiming at the huge research and development and testing requirements of ferroelectric piezoelectric materials and dielectric energy storage materials, can meet the testing requirements of most materials more widely, can realize the characterization of the performances of the ferroelectric piezoelectric materials and the dielectric energy storage materials in a large voltage range, high accuracy and a large temperature range, can assist the basic research of scientific research institutes at home and abroad, and can provide preconditions for the research and development of ferroelectric memory devices, piezoelectric transducer devices, dielectric energy storage devices and piezoelectric sensing devices.
Drawings
FIG. 1 is a schematic diagram of a ferroelectric material testing system according to the present invention;
FIG. 2 is a schematic diagram of a high and low temperature sample holder apparatus for a ferroelectric material testing system according to the present invention;
FIG. 3 is a circuit diagram of a current sampling amplifying circuit of a ferroelectric material testing system according to the present invention, wherein (a) is a current amplifying circuit, (b) is a precision rectifying circuit, and (c) is a precision rectifying circuit;
fig. 4 is a circuit diagram of a voltage sampling amplifying circuit of a ferroelectric material testing system according to the present invention, in which (a) is a voltage amplifying circuit, (b) is a precision rectifying circuit, and (c) is a precision rectifying circuit;
Fig. 5 is a graph of test results of a ferroelectric material sample of a ferroelectric material test system according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings and detailed description. It should be understood that the embodiments described herein are for purposes of illustration only and are not intended to limit the invention, i.e., the embodiments described are merely some, but not all, of the embodiments of the invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein can be arranged and designed in a wide variety of different configurations, and the present invention can have other embodiments as well.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
For further understanding of the invention, the following detailed description is to be taken in conjunction with fig. 1-5, in which the following detailed description is given:
the first embodiment is as follows:
a ferroelectric material testing system comprises an upper computer 1, a testing host 2, a high-voltage amplifier 3 and a high-low temperature sample clamp device 4;
The test host 2 comprises a main control DSP processor 6, an analog-to-digital conversion module 7, a current sampling amplifying circuit 8 and a voltage sampling amplifying circuit 5;
The upper computer 1 is connected with a main control DSP processor 6, the main control DSP processor 6 is connected with a high-voltage amplifier 3 and an analog-to-digital conversion module 7, the high-voltage amplifier 3 is connected with a high-low temperature sample clamp device 4, the high-low temperature sample clamp device 4 is respectively connected with a current sampling amplifying circuit 8 and a voltage sampling amplifying circuit 5, the current sampling amplifying circuit 8 and the voltage sampling amplifying circuit 5 are connected with the analog-to-digital conversion module 7, and the analog-to-digital conversion module 7 is connected with the upper computer 1;
the high-low temperature sample fixture device 4 comprises an upper shell 4-1 and a lower shell 4-4, wherein an upper electrode 4-2 is arranged at the central point of the upper shell 4-1, a lower electrode 4-9 is arranged at the central point of the lower shell 4-4, a heater 4-7 is arranged at the bottom of the lower shell 4-4, and a temperature sensor 4-5 is arranged in the lower shell 4-4.
Further, the upper electrode 4-2 of the high-low temperature sample fixture device 4 is connected with the first lead 4-3, the temperature sensor 4-5 is connected with the second lead 4-6, the heater 4-7 is connected with the third lead 4-8, a sample to be tested is placed between the upper electrode 4-2 and the lower electrode 4-9, and the upper shell 4-1 and the lower shell 4-4 are in sealing connection after being installed.
Furthermore, the current sampling amplifying circuit 8 adopts a precise rectifying and amplifying mode, 2 paths of ADCs are respectively arranged after rectification, the circuit acquires feedback from the output of the diode by combining an operational amplifier and the diode, the operational amplifier compensates the voltage drop on the diode, and the gain of the current amplifying part is 3 times.
Furthermore, the voltage sampling amplifying circuit 5 adopts a precise rectifying and amplifying mode, adopts a mode of directly amplifying a positive signal of the voltage to be measured, and sends the positive signal to one path of ADC, and the negative voltage is rectified and turned into positive voltage and then sent to the other path of ADC to realize, and the voltage signal is measured by firstly adopting a resistor network to attenuate, then carrying out precise rectification and gain 1 time amplifying and shaping.
Furthermore, the DAC module of the main DSP processor 6 generates an excitation signal of the ferroelectric material testing system, after being amplified, the excitation signal is sent to the high-voltage amplifier 3, the measured sample is excited, after being attenuated and amplified, the excitation voltage and current are converted into digital signals by the analog-to-digital conversion module 7, and the digital signals are sent to the upper computer 1 through the communication port for processing operation, and finally, the electric hysteresis loop, the saturated polarization intensity, the residual polarization intensity and the coercive field parameters of the ferroelectric material are obtained.
Further, the test items of the test host 2 include a hysteresis loop test, a leakage current test, a FatigueTask fatigue test, a PulseTask single pulse test, an I (V) Task current-bias test, and a leakage and breakdown self-protection function test.
Furthermore, the upper computer is connected with the test host through a serial port line, so that software control of output signals and collection and processing of acquisition signals are realized; meanwhile, the high-low temperature sample clamp device is controlled to set and regulate the testing temperature and the temperature rising and falling rate, so that the ferroelectric performance of samples in the high-low temperature sample clamp device at different temperatures is characterized.
Further, the model of the main control DSP processor of the test host is a Texas instrument TMS320F28377D 32-bit floating point single-core and dual-core DSP processor, and the upper computer controls the test host and data acquisition, so that the setting of parameters such as test voltage, frequency, sample thickness, sample area and the like is realized, and the DSP processor is controlled to generate and acquire signals. The method comprises the steps that an excitation signal of a test system is generated by a DAC module of a DSP host in the test host, amplified by a high-voltage amplifier and then transmitted to a high-low temperature sample clamp device, a tested sample is excited, excited current and voltage signals are transmitted to the test host through the high-low temperature sample clamp device, the excited signal is amplified by a current sampling amplifying circuit in the test host and then converted into a digital signal by an analog-to-digital conversion module, the digital signal is transmitted to an upper computer through a communication port for processing operation, and finally parameters such as a hysteresis loop, polarization, coercive field and the like are obtained.
Further, a heater and a temperature sensor in the high-low temperature sample clamp device set a test temperature and a temperature rising and falling rate through an upper computer, the high-low temperature sample clamp device is regulated and controlled through a serial port line, finally the high-low temperature sample clamp device is enabled to rise and fall to a target temperature, meanwhile, a sample is enabled to be at a response test temperature, and the ferroelectric performance of the sample is represented at a certain temperature through a ferroelectric test system.
Further, the master DSP processor adopts a Texas instrument TMS320F28377D 32-bit floating point single-core and dual-core DSP processor, has a main frequency of 200MHz, has a 2x32Kx16bitBoot-Rom/Secure-Rom memory, an on-chip 1MB, an on-chip 512Kx16bitNORFLASH memory, an on-chip 204KB, an on-chip 256Kx16bitSRAM, 3 12bit buffer digital-to-analog converters (DACs), 4 analog-to-digital converters (ADCs), and a throughput of 1.1MSPS for each analog-to-digital converter in a 16-bit mode, and a throughput of 3.5MSPS for each converter in a 12-bit mode, and the communication peripheral comprises 1 USB2.0,2 CAN and 4 serial communication interfaces.
Further, the output voltage range of the test host is continuously adjustable from 0V to +/-5V, the frequency is 0.3 kHz to 100kHz, the voltage waveform is triangular wave or sine wave, the waveform can be customized, the output current is continuously adjustable from 0mA to +/-50 mA, the detection current signal range is 1nA to 1A, the detection voltage signal range is continuously and automatically tracked and detected from 0.001V to +/-5V, the temperature display precision is 0.1 ℃, and the temperature rise and fall range of the high-low temperature sample clamp device is room temperature to 200 ℃.
The second embodiment is as follows:
A test method of a ferroelectric material test system is realized by the ferroelectric material test system according to the first embodiment, and comprises the following steps:
S1, firstly, manufacturing a ferroelectric material sample into a plate capacitor, clamping the ferroelectric material sample between an upper electrode and a lower electrode of a high-low temperature sample clamp device, and then connecting a first wire with a high-voltage amplifier;
s2, setting the areas of the upper electrode and the lower electrode, the thickness of the ferroelectric material sample, test voltage parameters, test voltage period and interval time between the pre-programming and the test voltage, and testing the ferroelectric material;
s3, the upper computer sends out a test instruction to a main control DSP processor in the test host computer through a serial port line, a digital-to-analog converter is driven by the main control DSP processor to excite a set voltage signal to be sent into a high-voltage amplifier, and excitation test is carried out on a ferroelectric material sample after the excitation signal is amplified through the high-voltage amplifier;
further, in step S3, the strongest voltage signal of the excitation signal sent by the test host is a triangular wave signal with peak value of ±5v, and 1000 times of amplification is performed by a high-voltage amplifier, so as to obtain the excitation signal of ±5kv;
s4, returning the signals after the ferroelectric material sample is tested to a test host, amplifying the signals by a current sampling amplifying circuit, and sending the signals to a DSP (digital signal processor) through an analog-to-digital conversion module to analyze the test results;
further, the specific implementation method of the step S4 includes the following steps:
s4.1, analyzing and measuring the change relation of a current signal of the ferroelectric material sample excited by a high-voltage signal along with time by an upper computer, and obtaining a calculation expression of the change Q (t) of charges at two ends of the ferroelectric material sample along with time by integrating the change curve of the current along with time, wherein the calculation expression is as follows:
Q(t)＝∫I(t)dt
Wherein I (t) is the current at time t;
s4.2, setting the area of the ferroelectric material sample as A, and calculating the change D (t) of the electric displacement of the ferroelectric material sample along with time, wherein the calculation expression is as follows:
S4.3, after the actual excitation signals at the two ends of the ferroelectric material sample are attenuated by a 1000:1 attenuation circuit of the high-voltage amplifier, the actual excitation signals are sent to a test host to be amplified by a voltage amplifying circuit, and then sent to a DSP processor by an analog-to-digital conversion module to obtain the actual voltages V (t) at the two ends of the ferroelectric material sample, and the thickness h of the ferroelectric material sample is combined, so that the calculation expression of the change E (t) of the electric field intensity at the two ends of the ferroelectric material sample along with time is calculated:
S4.4, calculating the change P (t) of the polarization intensity of the ferroelectric material sample along with time by combining the electric field intensity at two ends of the ferroelectric material sample and the electric displacement at two ends of the ferroelectric material sample, wherein the calculation expression is as follows:
wherein ε 0 is the vacuum dielectric constant;
s4.5, in the test process, the ferroelectric material sample is actually a series effect of capacitance and resistance, and the test result is corrected by considering that the test loop has an equivalent capacitance C 0 and an equivalent resistance R 0, so that a corrected calculation expression is:
Wherein E '(t) is the time-dependent change of the electric field intensity at both ends of the ferroelectric material sample after correction, P' (t) is the time-dependent change of the polarization intensity of the ferroelectric material sample after correction, α (t) is the time-dependent change of the electric field intensity at both ends of the ferroelectric material sample, and β (t) is the time-dependent change of the polarization intensity of the ferroelectric material sample.
The results of the polarization response characteristics of potassium tantalate-niobate crystals near the curie temperature are shown in fig. 5, and the potassium tantalate-niobate crystals have saturated, complete hysteresis loops and good ferroelectric properties. The saturated polarization intensity is 10.14 mu C/cm 2, the residual polarization intensity is 8.79 mu C/cm 2, the coercive field on the right side is 6.08kV/cm, and the coercive field on the left side is-5.28 kV/cm
It is noted that relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Although the application has been described above with reference to specific embodiments, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the application. In particular, the features of the disclosed embodiments may be combined with each other in any manner so long as there is no structural conflict, and the exhaustive description of these combinations is not given in this specification solely for the sake of brevity and resource saving. Therefore, it is intended that the application not be limited to the particular embodiments disclosed herein, but that the application will include all embodiments falling within the scope of the appended claims.
Claims (4)
1. A test method based on ferroelectric material test system, the said ferroelectric material test system includes the host computer (1), test the host computer (2), high-pressure amplifier (3), high-low temperature sample clamp device (4);
The test host (2) comprises a main control DSP processor (6), an analog-to-digital conversion module (7), a current sampling amplifying circuit (8) and a voltage sampling amplifying circuit (5);
The upper computer (1) is connected with the main control DSP processor (6), the main control DSP processor (6) is connected with the high-voltage amplifier (3) and the analog-to-digital conversion module (7), the high-voltage amplifier (3) is connected with the high-low temperature sample clamp device (4), the high-low temperature sample clamp device (4) is respectively connected with the current sampling amplifying circuit (8) and the voltage sampling amplifying circuit (5), and the current sampling amplifying circuit (8) and the voltage sampling amplifying circuit (5) are connected with the analog-to-digital conversion module (7);
The high-low temperature sample clamp device (4) comprises an upper shell (4-1) and a lower shell (4-4), wherein an upper electrode (4-2) is arranged at the central point of the upper shell (4-1), a lower electrode (4-9) is arranged at the central point of the lower shell (4-4), a heater (4-7) is arranged at the inner bottom of the lower shell (4-4), and a temperature sensor (4-5) is arranged in the lower shell (4-4);
The upper electrode (4-2) of the high-low temperature sample fixture device (4) is connected with the first lead (4-3), the temperature sensor (4-5) is connected with the second lead (4-6), the heater (4-7) is connected with the third lead (4-8), a sample to be tested is placed between the upper electrode (4-2) and the lower electrode (4-9), and the upper shell (4-1) and the lower shell (4-4) are in sealing connection after being installed;
The testing method is characterized by comprising the following steps of:
S1, firstly, manufacturing a ferroelectric material sample into a plate capacitor, clamping the ferroelectric material sample between an upper electrode and a lower electrode of a high-low temperature sample clamp device, and then connecting a first wire with a high-voltage amplifier;
s2, setting the areas of the upper electrode and the lower electrode, the thickness of a ferroelectric material sample, test voltage parameters, test voltage period and interval time between pre-polarization and test voltage, and testing the ferroelectric material;
S3, the upper computer sends a test instruction to a main control DSP processor in the test host computer through a serial port line, a DAC module of the main control DSP processor excites a set voltage signal to be sent into a high-voltage amplifier, and after the excitation signal is amplified through the high-voltage amplifier, excitation test is carried out on a ferroelectric material sample;
s4, the signals after the ferroelectric material sample is tested are returned to the test host, amplified by the current sampling amplifying circuit and sent to the main control DSP processor by the analog-to-digital conversion module, and the test result is analyzed;
the specific implementation method of the step S4 comprises the following steps:
s4.1, analyzing and measuring the change relation of a current signal of the ferroelectric material sample excited by a high-voltage signal along with time by an upper computer, and obtaining a calculation expression of the change Q (t) of charges at two ends of the ferroelectric material sample along with time by integrating the change curve of the current along with time, wherein the calculation expression is as follows:
Q(t)＝∫I(t)dt
Wherein I (t) is the current at time t;
s4.2, setting the area of the ferroelectric material sample as A, and calculating the change D (t) of the electric displacement of the ferroelectric material sample along with time, wherein the calculation expression is as follows:
S4.3, after the actual excitation signals at the two ends of the ferroelectric material sample are attenuated by a resistor network, the actual excitation signals are sent to a test host to be amplified by a voltage sampling amplifying circuit, and then sent to a main control DSP processor by an analog-to-digital conversion module to obtain the actual voltage V (t) at the two ends of the ferroelectric material sample, and the thickness h of the ferroelectric material sample is combined, so that the calculation expression of the change E (t) of the electric field intensity at the two ends of the ferroelectric material sample along with time is calculated as follows:
S4.4, calculating the change P (t) of the polarization intensity of the ferroelectric material sample along with time by combining the electric field intensity at two ends of the ferroelectric material sample and the electric displacement at two ends of the ferroelectric material sample, wherein the calculation expression is as follows:
wherein ε 0 is the vacuum dielectric constant;
S4.5, in the test process, the ferroelectric material sample is actually a series effect of capacitance and resistance, and the test result is corrected by considering that the test loop has an equivalent capacitance C 0 and an equivalent resistance R 0, so that a corrected calculation expression is obtained:
Wherein E '(t) is the time-dependent change of the electric field intensity at both ends of the ferroelectric material sample after correction, P' (t) is the time-dependent change of the polarization intensity of the ferroelectric material sample after correction, α (t) is the time-dependent change of the electric field intensity at both ends of the ferroelectric material sample, and β (t) is the time-dependent change of the polarization intensity of the ferroelectric material sample.
2. The testing method based on the ferroelectric material testing system according to claim 1, wherein the voltage sampling amplifying circuit (5) in the ferroelectric material testing system adopts a precise rectifying and amplifying mode, adopts a positive signal of the tested voltage to be directly amplified and sent to one path of ADC, and the negative voltage is rectified and turned to positive voltage and then sent to the other path of ADC to realize.
3. The testing method based on the ferroelectric material testing system according to claim 2, wherein the test items of the test host (2) in the ferroelectric material testing system include a hysteresis loop test, a leakage current test, a Fatigue Task fatigue test, a Pulse Task single Pulse test, an I (V) Task current-bias test, and a leakage and breakdown self-protection function test.
4. The test method based on the ferroelectric material test system according to claim 1, wherein in the step S3, the strongest voltage signal of the excitation signal sent by the test host is a triangular wave signal with peak-to-peak value of ±5v, and the triangular wave signal is amplified 1000 times by a high voltage amplifier to obtain a high voltage signal of ±5kv.
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