CN117220129A - Vertical cavity surface emitting laser - Google Patents
Vertical cavity surface emitting laser Download PDFInfo
- Publication number
- CN117220129A CN117220129A CN202311301285.8A CN202311301285A CN117220129A CN 117220129 A CN117220129 A CN 117220129A CN 202311301285 A CN202311301285 A CN 202311301285A CN 117220129 A CN117220129 A CN 117220129A
- Authority
- CN
- China
- Prior art keywords
- layer
- grating
- emitting laser
- vertical cavity
- cavity surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 32
- 230000003647 oxidation Effects 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims description 7
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 230000010287 polarization Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004422 calculation algorithm Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000000438 stratum basale Anatomy 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a vertical cavity surface emitting laser, comprising: a grating structure and multiple active regions. The grating structure comprises a grating layer and a substrate layer, wherein the grating layer is formed on the surface of the substrate layer, the refractive index of the material of the grating layer is higher than that of the substrate layer, the grating layer comprises a plurality of columnar grating bulges and grating gaps, and the grating gaps are formed around the grating bulges; the multi-active region is arranged below the grating structure and comprises a plurality of active layers and a plurality of tunnel junctions, wherein an oxidation limiting layer is arranged above each active layer, the tunnel junctions are arranged above the oxidation limiting layers in a stacked mode, the active regions, the oxidation limiting layers and the tunnel junctions are arranged in a stacked mode from bottom to top to form a group of structures, and the uppermost layers are the active regions and the oxidation limiting layers. The invention can reduce the whole thickness of the vertical cavity surface emitting laser, improve the heat dissipation characteristic and provide higher output power.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectrons, in particular to a vertical cavity surface emitting laser.
Background
A vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser) is a laser with its light exit direction perpendicular to the substrate surface, with quantum wells grown generally in the (100) direction, with all polarization direction gains being isotropic. Currently, due to the large lateral dimensions of vcsels, higher order transverse modes are prone to occur, each of these modes comprising two orthogonal polarization states. Both polarization states jump during the temperature or bias current change, and stable polarization selection characteristics are difficult to realize. Therefore, the vertical cavity surface emitting laser with stable polarization selection characteristic has important application in the fields of atomic sensing devices, optical communication systems, laser frequency multiplication, gas detection, spectrum analysis and the like. The narrow-linewidth vertical cavity surface emitting laser device which has good polarization selection characteristic and single-mode characteristic and can work at high temperature has important significance in application research of an atomic sensing device.
It has been found that polarization selective properties of a vcsels can be achieved using a grating structure. By adjusting parameters such as grating period, duty ratio, thickness and the like, the reflectivity difference of transverse electric (Transverse Electric, TE) and transverse magnetic (Transverse Magnetic, TM) modes is increased, one of the modes can be restrained, and the polarization of laser emitted by the vertical cavity surface emitting laser is controllable. However, the grating structure generates more loss. In addition, the vertical cavity surface emitting laser device with good single mode characteristic generally adopts an oxidation limiting layer structure to carry out photoelectric limitation, and larger loss can be generated, so that the power of the device is reduced. Meanwhile, the output power of the device can be reduced under high-temperature operation, and the application of the device in an atomic sensing device is affected. It is therefore particularly important to obtain a higher power vertical cavity surface emitting laser with the above structure.
Disclosure of Invention
The invention aims to provide a vertical cavity surface emitting laser, which is used for solving the problem of unstable polarization of the vertical cavity surface emitting laser, and simultaneously solving the problem of lower output power under the conditions of polarization selection, good single-mode characteristic and stable working at high temperature, thereby meeting specific application requirements.
In one aspect, the present invention provides a vertical cavity surface emitting laser comprising: a grating structure and multiple active regions. The grating structure comprises a grating layer and a substrate layer, wherein the grating layer is formed on the surface of the substrate layer, the refractive index of the material of the grating layer is higher than that of the substrate layer, the grating layer comprises a plurality of columnar grating bulges and grating gaps, and the grating gaps are formed around the grating bulges; the multi-active region is arranged below the grating structure and comprises a plurality of active layers and a plurality of tunnel junctions, wherein an oxidation limiting layer is arranged above each active layer, the tunnel junctions are arranged above the oxidation limiting layers in a stacked mode, and the active regions, the oxidation limiting layers and the tunnel junctions are arranged in a stacked mode from bottom to top to form a group of structures.
In some embodiments of the present invention, the arrangement and distribution of grating projections and grating gaps has periodicity in at least one direction, and the grating projections include stripe-shaped columns, rectangular columns, and elliptical columns.
In some embodiments of the invention, the grating lobe material has a refractive index greater than the grating gap and the grating lobe material has a refractive index greater than the base layer.
In some embodiments of the present invention, the material used for the grating layer includes amorphous silicon, aluminum gallium arsenide; the substrate layer is made of silicon oxide, gallium arsenide and aluminum gallium arsenide.
In some embodiments of the invention, the grating gap is filled with a medium comprising air or a material having a refractive index less than that of the grating protrusion.
In some embodiments of the present invention, an active layer and an oxidation-limiting layer are sequentially stacked on a group of structures on the uppermost layer of the multiple active regions, and the oxidation-limiting layer is in the shape of an annular boss.
In some embodiments of the present invention, the tunnel junction employs a highly doped P-type semiconductor layer or a highly doped N-type semiconductor layer.
In some embodiments of the invention, further comprising: sequentially stacking a bottom electrode layer, a substrate and an N-type distributed Bragg reflector layer from bottom to top, wherein the N-type distributed Bragg reflector layer is arranged below the multiple active layers; the P-type distributed Bragg reflector layer, the ohmic contact layer and the electrode layer are sequentially stacked from bottom to top, wherein the P-type distributed Bragg reflector layer and the ohmic contact layer are stacked between the multi-active area and the grating structure; the electrode layer is formed above the substrate layer and is arranged at the outer edge of the grating gap; the bottom electrode layer, the substrate, the N-type distributed Bragg reflector layer, the plurality of active layers, the plurality of oxidation limiting layers, the plurality of tunnel junctions, the P-type distributed Bragg reflector layer, the ohmic contact layer and the electrode layer jointly form a light-emitting device of the vertical cavity surface emitting laser.
In some embodiments of the present invention, the electrode layer is an annular boss, and the annular middle portion forms an electrode hollowed-out region that serves as a light exit hole of the vertical cavity surface emitting laser.
In some embodiments of the present invention, the grating layer is disposed in a middle region of the electrode layer and covers the light exit hole.
Based on the above, the vertical cavity surface emitting laser according to the embodiment of the present invention adopts a combination of a grating structure and multiple active regions, so as to obtain the following beneficial effects:
(1) The grating structure is used as a P-surface reflector of the vertical cavity surface emitting laser, so that the number of pairs of the P-type distributed Bragg reflectors can be reduced, and the thickness of the vertical cavity surface emitting laser is reduced;
(2) The grating structure can reduce the gain of one of the TE mode and the TM mode and has polarization selection characteristic;
(3) The multi-active-area structure can increase the output power of the vertical cavity surface emitting laser, obtain proper output power under the conditions of having a grating structure, an oxidation limiting layer and working at high temperature, and meanwhile, the grating structure can improve the heat dissipation characteristic of the device and is better applied to atomic sensing devices.
Drawings
FIG. 1 schematically illustrates a cross-sectional view of a multiple active area VCSEL employing a grating structure as a P-plane mirror according to an embodiment of the present invention;
FIG. 2 schematically illustrates a grating structure diagram according to an embodiment of the invention;
FIG. 3 schematically illustrates a block diagram of a VCSEL having multiple active regions according to an embodiment of the present invention;
FIG. 4 is a graph characterizing the optical field pattern of the VCSEL shown in FIG. 3;
FIG. 5 schematically illustrates a block diagram of a multiple active area VCSEL with a grating structure according to an embodiment of the present invention;
FIG. 6 is a calculation of a reflection spectrum characterizing the grating optical properties of the VCSEL shown in FIG. 5;
FIG. 7 schematically illustrates a block diagram of a multiple active area VCSEL with a grating structure according to an embodiment of the present invention;
fig. 8 is a calculation result of a reflection spectrum characterizing the grating optical characteristics of the vertical cavity surface emitting laser shown in fig. 7.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
Descriptions of structural embodiments and methods of the present invention are disclosed herein. It is to be understood that there is no intention to limit the invention to the particular disclosed embodiments, but that the invention may be practiced using other features, elements, methods and embodiments. Like elements in different embodiments are generally referred to by like numerals.
Fig. 1 schematically illustrates a cross-sectional view of a multiple active area vertical cavity surface emitting laser employing a grating structure as a P-plane mirror in accordance with an embodiment of the present invention.
Referring to fig. 1, the vertical cavity surface emitting laser of the present embodiment includes a grating structure and multiple active regions. The grating structure comprises a grating layer 1 and a substrate layer 2; the multiple active areas are arranged below the grating structure and comprise a plurality of active layers 8 and a plurality of tunnel junctions 6, wherein an oxidation limiting layer 7 is arranged above each active layer 8, the tunnel junctions 6 are stacked above the oxidation limiting layer 7, and the active areas 8, the oxidation limiting layers 7 and the tunnel junctions 6 are stacked from bottom to top to form a group of structures.
An active layer 8 and an oxidation limiting layer 7 are sequentially stacked on a group of structures of the uppermost layer of the multiple active areas, and the oxidation limiting layer 7 is in the shape of an annular boss.
In the present embodiment, the tunnel junction 6 employs a highly doped P-type semiconductor layer and a highly doped N-type semiconductor layer.
With continued reference to fig. 1, a bottom electrode layer 11, a substrate 10, and an N-type distributed bragg reflector (distributed Bragg reflector, DBR) layer 9 are stacked in order from bottom to top, wherein the N-type distributed bragg reflector layer 9 is below the multiple active layers; the P-type distributed Bragg reflector layer 5, the ohmic contact layer 4 and the electrode layer 3 are sequentially stacked from bottom to top, wherein the P-type distributed Bragg reflector layer 5 and the ohmic contact layer 4 are stacked between the multiple active areas and the grating structure; the electrode layer 3 is formed above the substrate layer 2 and is arranged at the outer edge of the grating; the bottom electrode layer 11, the substrate 10, the N-type distributed Bragg reflector layer 9, the plurality of active layers 8, the plurality of oxidation limiting layers 7, the plurality of tunnel junctions 6, the P-type distributed Bragg reflector layer 5, the ohmic contact layer 4 and the electrode layer 3 together form a light-emitting device of the vertical cavity surface emitting laser.
In this embodiment, the oxidation limiting layer 7 is disposed on the active region layer 8 and is an annular boss, and the tunnel junction 6 is disposed on the annular boss; electrode layer 3 is provided with on the opposite side of stratum basale 2 and ohmic contact layer 4, and electrode layer 3 is annular boss, and the middle part of annular boss forms the electrode fretwork area that is used as the light-emitting hole of vertical cavity surface emitting laser.
With continued reference to fig. 1, a grating structure is disposed on the ohmic contact layer 4 of the vcsels to serve as a P-plane mirror of the light emitting device, thereby reducing the thickness of the P-type distributed bragg reflector layer, increasing the device power, and reducing joule heating.
Fig. 2 schematically shows a grating structure diagram according to an embodiment of the invention. As shown in fig. 2, the grating structure includes: a grating layer 1 and a substrate layer 2. Wherein, the grating layer 1 is formed on the surface of the substrate layer 2, and the refractive index of the material of the grating layer 1 is higher than that of the substrate layer 2.
The material used for the grating layer 1 includes, but is not limited to, amorphous silicon or aluminum-containing low refractive index materials such as aluminum gallium arsenide.
Materials used for the base layer 2 include, but are not limited to, materials with higher refractive index such as silicon oxide, gallium arsenide, or aluminum gallium arsenide with higher aluminum content.
The grating layer 1 of the grating structure is arranged in the light emitting hole of the light emitting device and covers the light emitting hole.
The substrate layer 2 of the grating structure is used as a phase matching layer of the light emitting device, and the following formula condition is satisfied:
for the phase difference produced by light oscillating for one period in the cavity of a VCSEL,/H>Reflection phase for reflecting light for the grating structure, +.>The reflection phase of light reflected by the light emitting device is λ, which is the wavelength of light, and m is any integer.
With continued reference to fig. 2, the grating layer 1 includes columnar grating protrusions 12 formed on the substrate layer 2 and distributed periodically, and grating gaps 13 formed around the columnar grating protrusions 12, respectively, wherein the grating gaps are filled with a medium, and the medium includes air or a material with a refractive index smaller than that of the grating protrusions; wherein the grating protrusions 12 and the grating gaps 13 of the grating layer 1 are arranged with periodicity in at least one direction. The shape of the grating lobes 12 includes bar columns, rectangular columns, oval columns, or other periodic columns, etc.
In this embodiment, tg is the height of the grating layer 1, H1 is the thickness of the base layer 2, and T is the grating period.
Fig. 3 schematically illustrates a block diagram of a vcsels having multiple active regions according to an embodiment of the present invention, and fig. 4 is a diagram illustrating a light field pattern of the vcsels illustrated in fig. 3.
Referring to fig. 3, in the present embodiment, the 795nm vertical cavity surface emitting laser has three active regions, and the active layer 8, the oxidation-limiting layer 7 and the tunnel junction 6 are sequentially arranged into a group, and two groups are overlapped together, and then the active layer 8 and the oxidation-limiting layer 7 are added.
In this embodiment, the active layer 8 may be InAlGaAs Quantum well (Quantum Wells), the thickness of the oxidation limiting layer 7 may be set to 30nm, and the tunnel junction 6 may be made of a highly doped material, but the present invention is not limited thereto.
Referring now to fig. 4, under the above-described setting, the active layer 8 is disposed at the antinode of the outgoing light, and the oxidation limiting layer 7 and the tunnel junction 6 are disposed at the node of the outgoing light, respectively.
FIG. 5 schematically illustrates a block diagram of a multiple active area VCSEL with a grating structure according to an embodiment of the present invention; fig. 6 is a calculation of a reflection spectrum characterizing the grating optical properties of the vertical cavity surface emitting laser shown in fig. 5.
Referring to fig. 5, in this embodiment, the grating structure is applied to a 795nm multi-active-area vcsels with a cylindrical support and a circular light exit hole, and the grating structure is used as a P-plane mirror of the vcsels to reduce the thickness of the P-type distributed bragg mirror layer.
In this embodiment, the grating structure employs a bar-shaped columnar grating protrusion 12 with a refractive index of 3.55, the refractive index of the substrate layer 2 is 3.08, the grating height Tg is 60nm, the thickness H1 of the substrate layer 2 is 60nm, the grating width in the x direction is 380nm, the grating period T is 790nm, and the grating duty ratio is 0.5.
Referring to fig. 6, under the above set conditions, the present embodiment performs a simulation based on a strict coupled wave (Rigorous Coupled Wave Analysis, RCWA) algorithm on the sub-wavelength grating layer based on the high contrast refractive index, and the incident light is a TE plane wave with an electric field component perpendicular to the incident plane, so as to obtain a reflection spectrum representing the optical characteristics of the grating shown in fig. 6, including two curves of TE reflectivity and TM reflectivity. As can be seen from the two curves in fig. 6, in this embodiment, the TE mode reflectivity of the grating layer near the 795nm band is much higher than the TM mode reflectivity, so that good polarization selection can be achieved.
FIG. 7 schematically illustrates a block diagram of a multiple active area VCSEL with a grating structure according to an embodiment of the present invention; fig. 8 is a calculation result of a reflection spectrum characterizing the grating optical characteristics of the vertical cavity surface emitting laser shown in fig. 7.
Referring to fig. 7, in this embodiment, the grating structure is applied to a 795nm multi-active-area vcsels with a cylindrical support and a circular light exit hole, and the grating can be used as a P-plane mirror of the vcsels to reduce the thickness of the P-type distributed bragg mirror layer.
In this embodiment, rectangular columnar grating protrusions 12 with a refractive index of 3.47 are used in the grating structure, the refractive index of the base layer 2 is 1.47, the grating height Tg is 500nm, the thickness H1 of the base layer 2 is 500nm, the grating width in the x direction is 495nm, the grating period T is 660nm, the grating duty ratio is 0.75, the grating width in the y direction is 171.6nm, the grating period T is 660nm, and the grating duty ratio is 0.26.
Referring to fig. 8, under the above set conditions, the present embodiment performs a simulation based on a strict coupled wave algorithm on the sub-wavelength grating layer based on the high contrast refractive index, and the incident light is a Transverse Electric (TE) plane wave with an electric field component perpendicular to the incident plane, so as to obtain a reflection spectrum representing the optical characteristics of the grating as shown in fig. 8. As can be seen from fig. 8, in this embodiment, the two-dimensional sub-wavelength grating layer generates a high reflection band having a reflectance of more than 99% in the X direction 783 to 802nm, a peak reflectance of 99.6% in the 795nm center wavelength, and exhibits a low reflection characteristic in the Y direction in the vicinity of 795nm, and a reflectance of 3.4% in the 795nm center wavelength, whereby good polarization selection can be achieved.
The following describes the specific preparation process of the vertical cavity surface emitting laser using a center wavelength of 795nm in this embodiment:
step 1: a multi-active structure is prepared. 39 pairs of N-type Al are sequentially epitaxially grown on an N-type GaAs substrate 10 using a Metal-organic chemical vapor deposition (MOCVD) process 0.22 Ga 0.78 As/Al 0.9 Ga 0.1 An As distributed Bragg reflector layer 9 and a three-quantum well multi-active region, wherein the active layer 8 is made of In 0.08 Ga 0.79 Al 0.13 As/Al 0.3 Ga 0.7 As, each active layer 8 having a layer of Al 0.98 Ga 0.02 The As oxidation limiting layer 7 and the highly doped N-type and P-type A1GaAs tunnel junction 6 are arranged on the oxidation limiting layer 7, and the stacking sequence is As follows: active layer 8-oxidation limiting layer 7-tunnel junction 6-active layer 8-oxidation limiting layer 7, 26 vs P-type Al 0.22 Ga 0.78 As/Al 0.9 Ga 0.1 An As distributed Bragg reflector layer 5 and a p-type heavily doped GaAs ohmic contact layer 4.
Step 2: and preparing a grating structure. SiO is prepared by utilizing a plasma enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD) process and a sputtering process 2 The grating base layer 2 and the Si grating layer 1 were subjected to electron beam exposure to write a grating pattern on the epitaxial wafer, and then the grating pattern was etched by inductively coupled plasma etching (Inductive Coupled Plasma Emission Spectrometer, ICP).
Step 3: a P-side electrode layer 3 for current injection is formed on the ohmic contact layer 4 by one photolithography using electron beam evaporation and a tape stripping process.
Step 4: PECVD growth is utilized to prepare a subsequent ICP etching distributed Bragg reflector table board, secondary photoetching is carried out, and a table board pattern is transferred to SiO for subsequent table board etching 2 And (3) on the mask.
Step 5: ICP etching of the cylindrical mesa to a depth sufficient to expose the Al to be oxidized next 0.98 Ga 0.02 And an As layer.
Step 6: wet oxidation, oxidizing the etched epitaxial wafer, using nitrogen as carrier gas at 440 deg.C, introducing 92 deg.C water vapor, and adding Al in the epitaxial wafer 0.98 Ga 0.02 The As oxidation limiting layer is oxidized to form a current limiting hole.
Step 7: growth of SiO by PECVD 2 And the insulating layer is etched to form a light hole by three times of photoetching definition, and the side wall is insulated and isolated.
Step 8: four times of photoetching, namely flattening a mesa channel by using polyimide glue, and curing for 2 hours in a nitrogen atmosphere at 200 ℃.
Step 9: five times of photoetching, and using the tape stripping technology to make a thick gold layer.
Step 10: and thinning and polishing the back substrate, and depositing a back electrode.
Step 11: the preparation of the vertical cavity surface emitting laser is completed through the steps of alloying, cleavage scribing, initial testing, chip welding, packaging and the like in sequence.
In summary, according to the vertical cavity surface emitting laser provided by the embodiment of the invention, the grating layer and the substrate layer with larger refractive index difference are adopted, so that the grating with high reflectivity can be obtained to serve as the P-plane high-reflection mirror of the vertical cavity surface emitting laser, the logarithm of the P-plane reflection mirror P-type distributed Bragg reflection mirror is reduced, the power of the device is improved, and the joule heat is reduced. By selecting parameters such as period, duty ratio and the like of the grating strips, the grating polarization selection characteristic can be selected, and the polarization selection and polarization independence characteristics can be realized. The adoption of the multi-active-area structure can enable the device to provide higher output power while having high-loss structures such as a grating and an oxidation limiting layer, thereby being applied to the fields of a plurality of atomic sensing devices, an optical communication system, laser frequency multiplication, gas detection, spectrum analysis and the like.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (10)
1. A vertical cavity surface emitting laser, comprising:
grating structure, comprising a grating layer (1) and a substrate layer (2), wherein the grating layer (1) is formed on the surface of the substrate layer (2), the material refractive index of the grating layer (1) is higher than that of the substrate layer (2), and the grating layer (1) comprises:
a plurality of columnar grating projections (12);
grating gaps (13) formed around the grating protrusions (12);
the multi-active-area structure comprises a plurality of active layers (8) and a plurality of tunnel junctions (6), wherein each active layer (8) is provided with an oxidation limiting layer (7) above, the tunnel junctions (6) are stacked above the oxidation limiting layers (7), the active layers (8) and the oxidation limiting layers (7) are stacked from bottom to top to form a group of structures, and the uppermost layers are the active layers (8) and the oxidation limiting layers (7).
2. The vertical cavity surface emitting laser according to claim 1, wherein an arrangement distribution of the grating protrusion (12) and the grating gap (13) has periodicity in at least one direction, and the grating protrusion (12) comprises a bar-shaped columnar, a rectangular columnar, an elliptic columnar.
3. The vcl according to claim 1, characterized in that the material refractive index of the grating protrusion (12) is larger than the grating gap (13), and the material refractive index of the grating protrusion (12) is larger than the substrate layer (2).
4. The vertical cavity surface emitting laser according to claim 1, wherein the material used for the grating layer (1) comprises amorphous silicon, aluminum gallium arsenide;
the substrate layer (2) is made of silicon oxide, gallium arsenide and aluminum gallium arsenide.
5. A vertical cavity surface emitting laser according to claim 3, characterized in that the grating gap (13) is filled with a medium comprising air or a material having a refractive index smaller than the grating protrusion (12).
6. The vertical cavity surface emitting laser according to claim 1, wherein a group of structures of the uppermost layer of the multiple active regions is further stacked with one active layer (8) and one oxidation limiting layer (7) in sequence, and the oxidation limiting layer (7) is in the shape of an annular boss.
7. The vcsels according to claim 1, characterized in that the tunnel junction (6) employs a highly doped P-type semiconductor layer and a highly doped N-type semiconductor layer.
8. The vertical cavity surface emitting laser according to claim 1, further comprising:
a bottom electrode layer (11), a substrate (10) and an N-type distributed Bragg reflector layer (9) are sequentially overlapped from bottom to top,
the N-type distributed Bragg reflector layer (9) is arranged below the multi-active layer (8); and
a P-type distributed Bragg reflector layer (5), an ohmic contact layer (4) and an electrode layer (3) are sequentially overlapped from bottom to top,
the P-type distributed Bragg reflector layer (5) and the ohmic contact layer (4) are overlapped between the multi-active area and the grating structure;
the electrode layer (3) is formed above the substrate layer (2) and is arranged at the outer edge of the grating gap (13);
the vertical cavity surface emitting laser comprises a bottom electrode layer (11), a substrate (10), an N-type distributed Bragg reflector layer (9), a plurality of active layers (8), a plurality of oxidation limiting layers (7), a plurality of tunnel junctions (6), a P-type distributed Bragg reflector layer (5), an ohmic contact layer (4) and an electrode layer (3).
9. The vertical cavity surface emitting laser according to claim 8, wherein the electrode layer (3) is in the shape of an annular boss, and the annular middle part forms an electrode hollowed-out area serving as an exit hole of the vertical cavity surface emitting laser.
10. The vcl according to claim 9, characterized in that the grating layer (1) is arranged in the middle area of the electrode layer (3) and covers the light exit aperture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311301285.8A CN117220129A (en) | 2023-10-09 | 2023-10-09 | Vertical cavity surface emitting laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311301285.8A CN117220129A (en) | 2023-10-09 | 2023-10-09 | Vertical cavity surface emitting laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117220129A true CN117220129A (en) | 2023-12-12 |
Family
ID=89051133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311301285.8A Pending CN117220129A (en) | 2023-10-09 | 2023-10-09 | Vertical cavity surface emitting laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117220129A (en) |
-
2023
- 2023-10-09 CN CN202311301285.8A patent/CN117220129A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7242705B2 (en) | Grating-outcoupled cavity resonator having uni-directional emission | |
| US5425043A (en) | Semiconductor laser | |
| US7502401B2 (en) | VCSEL system with transverse P/N junction | |
| US5088099A (en) | Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence | |
| CN101385207B (en) | Surface gratings on vcsels for polarization pinning | |
| JPH10505465A (en) | Vertical cavity laser with current aperture | |
| US20050063440A1 (en) | Epitaxial mode-confined vertical cavity surface emitting laser (VCSEL) and method of manufacturing same | |
| US6778578B2 (en) | Multi-wavelength surface emitting laser and method for manufacturing the same | |
| KR102518449B1 (en) | Indium Phosphide VCSEL with Dielectric DBR | |
| US8526480B2 (en) | Semiconductor laser device | |
| WO2019072185A1 (en) | Gain coupling distributed feedback semiconductor laser and manufacturing method therefor | |
| CN116914561A (en) | Single-mode high-power low-thermal-resistance vertical cavity surface emitting laser and preparation method thereof | |
| JPH0555713A (en) | Light emitting semiconductor element | |
| US6693934B2 (en) | Wavelength division multiplexed vertical cavity surface emitting laser array | |
| CN219086444U (en) | Semiconductor laser | |
| CN116683288A (en) | Fundamental mode low divergence angle vertical cavity surface emitting laser and preparation method thereof | |
| US20220209502A1 (en) | Vertical-cavity surface-emitting laser and method for forming the same | |
| CN115548879A (en) | Integrated laser and preparation method thereof | |
| CN117220129A (en) | Vertical cavity surface emitting laser | |
| CN114976865A (en) | High-efficiency vertical cavity surface EML chip with high-contrast grating | |
| CN116073231A (en) | Multi-wavelength topological cavity surface emitting laser array | |
| CN116613630A (en) | Vertical cavity surface emitting laser | |
| KR100475846B1 (en) | Vertical Cavity Surface Emitting Lasers | |
| CN115764549B (en) | VCSEL laser | |
| CN220086618U (en) | Fundamental mode low divergence angle vertical cavity surface emitting laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |