CN117206698A - Laser cutting device and method based on double spatial light modulators - Google Patents
Laser cutting device and method based on double spatial light modulators Download PDFInfo
- Publication number
- CN117206698A CN117206698A CN202311144172.1A CN202311144172A CN117206698A CN 117206698 A CN117206698 A CN 117206698A CN 202311144172 A CN202311144172 A CN 202311144172A CN 117206698 A CN117206698 A CN 117206698A
- Authority
- CN
- China
- Prior art keywords
- spatial light
- laser
- light modulator
- convex lens
- aberration correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000003698 laser cutting Methods 0.000 title claims abstract description 26
- 230000004075 alteration Effects 0.000 claims abstract description 62
- 238000010587 phase diagram Methods 0.000 claims abstract description 61
- 238000012937 correction Methods 0.000 claims abstract description 51
- 238000012545 processing Methods 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000005540 biological transmission Effects 0.000 claims description 12
- 230000009977 dual effect Effects 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000007493 shaping process Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 206010041662 Splinter Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Laser Beam Processing (AREA)
Abstract
The invention relates to a laser cutting device based on double spatial light modulators and a method thereof, wherein a beam expander, a power attenuation module, a first spatial light modulator for loading a multi-focus phase diagram and a second spatial light modulator for loading an aberration correction phase diagram are sequentially arranged on an output light path of the laser, a first convex lens, a first reflecting mirror and a second convex lens are sequentially arranged on a light path between the first spatial light modulator and the second spatial light modulator, a third convex lens, a second reflecting mirror, a fourth convex lens and a third reflecting mirror are sequentially arranged on an output light path of the second spatial light modulator, and a processing objective lens is arranged on a reflecting light path of the third reflecting mirror. The laser beam is subjected to phase modulation through the spatial light modulator, is focused in a silicon wafer to generate a plurality of focuses, performs aberration correction, controls a phase diagram loaded by the spatial light modulator, and generates a plurality of axial focuses; the light spot shaping technology of the spatial light modulator corrects the spherical aberration phenomenon caused by refractive index mismatch in the hidden cutting process.
Description
Technical Field
The invention relates to a laser cutting device based on a double spatial light modulator and a processing method thereof.
Background
In the semiconductor industry, semiconductor materials are dominant and are widely applied to products such as MEMS devices, memory strips, CPU, power devices and the like. The grain size is smaller and the thickness is thinner, and the traditional cutter wheel cutting equipment is difficult to meet the high quality requirement due to the fact that the edge breakage is too large. The laser invisible cutting technology is used as a non-contact processing technology, laser energy is focused in a material to form a modified layer, thermal stress cracks are generated, and high-efficiency cutting with no surface scratch, no material loss and small heat affected zone is realized by controlling crack expansion. The laser invisible cutting technology has the advantages of high processing speed, high material utilization rate, good splinter quality, good consistency, high automation degree and the like, and is widely applied to the field of cutting brittle semiconductor materials such as silicon wafers and the like.
The common laser invisible cutting technology adopts a focusing mode of a single focus, the scanning of the single focus generates a modified layer, and for a semiconductor material with larger thickness, the laser invisible cutting needs to be completed through a plurality of scanning steps of gradually lifting the focus position, so that the processing efficiency is lower. If multiple controllable focuses can be simultaneously focused and generated inside the material for cutting, the cutting efficiency can be doubled.
In the laser invisible cutting process, when the converged laser beams pass through the interfaces between air media and materials with different refractive indexes, a strong spherical aberration phenomenon can be caused due to refractive index mismatch. The spherical aberration phenomenon causes significant focus shift, stretching and distortion of the focal spot, and becomes more pronounced as the machining depth increases. These phenomena adversely affect processing consistency, and aberration correction becomes increasingly important during laser ablation.
The spatial light modulator is used as a novel programmable optical device to regulate and control the amplitude, phase, polarization and other optical parameters of a laser beam, and can obtain any light field intensity distribution in a material processing area by matching with a required light path design.
The chinese patent 201710721276.2 discloses a multi-focus laser cutting system and a cutting method for a silicon-based MEMS wafer, as a multi-focus laser cutting method for a wafer interior, a plurality of focuses are formed mainly by a diffractive optical element, the processing shaping of the diffractive optical element is closely related to the number and the spacing of the focuses, and if the number and the spacing of the focuses need to be changed, the diffractive optical element needs to be customized again and the optical path needs to be adjusted, so that the operation is inconvenient.
Accordingly, there is a need to develop a laser processing apparatus that improves the internal cutting efficiency and consistency of semiconductor materials.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a laser cutting device based on a double-spatial light modulator and a method thereof, aiming at improving cutting efficiency and consistency.
The aim of the invention is achieved by the following technical scheme:
the laser cutting device based on the double spatial light modulators is characterized in that: the output light path of the laser is sequentially provided with a beam expander, a power attenuation module, a first spatial light modulator for loading a multi-focus phase diagram and a second spatial light modulator for loading an aberration correction phase diagram, a first convex lens, a first reflecting mirror and a second convex lens are sequentially arranged on the light path between the first spatial light modulator and the second spatial light modulator, a third convex lens, a second reflecting mirror, a fourth convex lens and a third reflecting mirror are sequentially arranged on the output light path of the second spatial light modulator, and a processing objective lens is arranged on the reflecting light path of the third reflecting mirror.
Further, the laser cutting device based on the double spatial light modulators is characterized in that the laser is a near infrared laser, a green laser or an ultraviolet laser with a pulse width of nanosecond, picosecond or femtosecond.
Further, the laser cutting device based on the double spatial light modulators is characterized in that the laser is a near infrared laser with a wavelength of 1064nm or 1080nm, or a green laser with a wavelength of 532nm or 515nm, or an ultraviolet laser with a wavelength of 355nm or 343nm.
Further, the laser cutting device based on the double spatial light modulators is a laser with the laser emitting frequency of 10-100 KHz continuously adjustable, the average power of 0-10W adjustable and the repetition frequency of 10-100 KHz.
Further, in the laser cutting device based on the double spatial light modulators, the first spatial light modulator and the second spatial light modulator are spatial light modulators with wavelengths of 300 nm-1100 nm and pixels higher than 30 ten thousand.
Further, in the laser cutting device based on the double spatial light modulator, the focal length of the first convex lens is the same as the focal length of the second convex lens.
The invention relates to a laser cutting method based on double spatial light modulators, wherein laser output by a laser amplifies and collimates a facula through a beam expander, a power attenuation module adjusts laser power to enable the laser power density of the laser incident to the first spatial light modulator to be lower than a threshold value, the first spatial light modulator loads a multi-focus phase diagram and reflects transmission laser, a first reflecting mirror changes the transmission direction of a light path, a first convex lens and a second convex lens form a 4f system to transmit an image to the second spatial light modulator, the second spatial light modulator loads an aberration correction phase diagram, the second reflecting mirror and the third reflecting mirror change the transmission direction of the light path, a third convex lens and a fourth convex lens form the 4f system to carry out beam shrinking and image transmission on the laser facula, so that the laser beam completely passes through the caliber of a processing objective lens, and laser output by the processing objective lens generates a plurality of axial focuses in the transmission direction of the beam and carries out aberration correction in the processed material, thereby realizing the cutting of the processed material.
Furthermore, in the laser cutting method based on the dual spatial light modulators, the first spatial light modulator is used for loading the axial multi-focus phase diagram and the second spatial light modulator is used for loading the aberration correction phase diagram, a plurality of focuses are generated in the semiconductor material and aberration correction is performed, the number of the focuses and the distance are controlled by loading different phase diagrams, and the aberration correction is controlled by the aberration correction phase diagram.
Furthermore, in the laser cutting method based on the double spatial light modulators, the spatial light modulator is used for loading the multi-focus phase diagram, the laser beam is focused by the processing objective lens to generate a plurality of focuses before and after the focal plane, and the number and the distance of the focuses are adjusted through different phase diagrams; the aberration correction phase diagrams under different depths are loaded by the spatial light modulator to correct the phenomenon of focal spot stretching and poor focusing under different processing depths caused by refractive index mismatch.
Compared with the prior art, the invention has remarkable advantages and beneficial effects, and is specifically embodied in the following aspects:
(1) according to the invention, the spatial light modulator is used for loading an axial multi-focus phase diagram and an aberration correction phase diagram, a plurality of focuses are generated in a semiconductor material and aberration correction is carried out, the number and the distance of the focuses are controlled by loading different phase diagrams, and the aberration correction is controlled by the aberration correction phase diagram;
(2) loading an axial multi-focus phase diagram and an aberration correction phase diagram through a spatial light modulator, generating a plurality of focuses in a semiconductor material and performing aberration correction, controlling the number and the distance of the focuses through loading different phase diagrams, and controlling the aberration correction through the aberration correction phase diagram; the controllable axial multi-focus generated by the spatial light modulator is used for invisible cutting of the semiconductor material, so that the invisible cutting efficiency of the semiconductor material is greatly improved, and the method is popularized to the precision machining of brittle semiconductor materials such as silicon wafers, gallium arsenide, indium phosphide, gallium nitride and the like and glass materials;
(3) the spherical aberration phenomenon caused by refractive index mismatch in the process of the hidden cutting of the semiconductor material is corrected by the light spot shaping technology of the spatial light modulator, so that the consistency and the processing quality of the hidden cutting of the semiconductor material are improved;
(4) aiming at thicker semiconductor materials (> 300 mu m), the traditional hidden cutting method needs 5-6 times of cutting, the processing speed is about 300mm/s, the cutting times are 1-2 times, and the processing speed is more than 500mm/s;
(5) loading a multi-focus phase diagram through a spatial light modulator, and generating a plurality of focuses before and after a laser beam is focused by a processing objective lens, wherein the number and the distance of the focuses can be adjusted through different phase diagrams; aberration correction phase diagrams under different depths are loaded through the spatial light modulator to correct focal spot stretching, poor focusing and other phenomena under different processing depths caused by refractive index mismatch, and processing consistency is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1: the optical path structure of the device is schematically shown;
fig. 2: an aberration correction schematic;
fig. 3: a double focus hidden cut schematic;
fig. 4: a silicon wafer bifocal undercut and aberration correction effect map;
fig. 5: a three-focus hidden-cut schematic;
fig. 6: and (3) a silicon wafer triple-focus undercut and aberration correction effect graph.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present invention, directional terms, order terms, etc. are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
As shown in fig. 1, a laser cutting device based on a dual spatial light modulator is provided with a beam expander 2, a power attenuation module 3, a first spatial light modulator 4 for loading a multi-focus phase diagram and a second spatial light modulator 8 for loading an aberration correction phase diagram in sequence on an output light path of the laser 1, a first convex lens 5, a first reflecting mirror 6 and a second convex lens 7 are provided with a first optical path between the first spatial light modulator 4 and the second spatial light modulator 8 in sequence, a third convex lens 9, a second reflecting mirror 10, a fourth convex lens 11 and a third reflecting mirror 12 are provided with a processing objective lens 13 on a reflecting light path of the third reflecting mirror 12 in sequence on an output light path of the second spatial light modulator 8.
The laser 1 emits near infrared laser, green laser or ultraviolet laser with a pulse width of nanosecond, picosecond or femtosecond. Preferably, the emission laser wavelength is 1064nm or 1080nm, or the green laser wavelength is 532nm or 515nm, or the ultraviolet laser wavelength is 355nm or 343nm. The laser is a laser with the emission laser frequency of 10-100 KHz, the average power of 0-10W and the repetition frequency of 10-100 KHz.
The first spatial light modulator 4 and the second spatial light modulator 8 are spatial light modulators with wavelengths of 300nm to 1100nm and pixels higher than 30 ten thousand.
The focal length of the first convex lens 5 is the same as the focal length of the second convex lens 7.
When the laser is used for cutting, laser output by the laser 1 amplifies and collimates a light spot through the beam expander 2, an effective window of the spatial light modulator is covered as much as possible, the power attenuation module 3 adjusts laser power, so that the laser power density of the laser incident to the first spatial light modulator 4 is lower than a threshold value of the laser power, damage is prevented, the first spatial light modulator 4 loads a multi-focus phase diagram, the laser is reflected and transmitted, the first reflecting mirror 6 changes the light path transmission direction, the first convex lens 5 and the second convex lens 7 form a 4f system, an image is transmitted to the second spatial light modulator 8, the second spatial light modulator 8 loads an aberration correction phase diagram, the second reflecting mirror 10 and the third reflecting mirror 12 change the light path transmission direction, the third convex lens 9 and the fourth convex lens 11 form a 4f system, the laser light spot is contracted and transmitted, the laser beam completely passes through the caliber of the processing objective 13, and the laser output by the processing objective 13 generates a plurality of axial focuses along the light beam transmission direction and performs aberration correction in the processed material 14, and the processed material is cut.
The axial multi-focus phase diagram is loaded through the first spatial light modulator 4, the aberration correction phase diagram is loaded through the second spatial light modulator 8, a plurality of focuses are generated in the semiconductor material and aberration correction is carried out, the number of the focuses and the distance are controlled through loading different phase diagrams, and the aberration correction is controlled through the aberration correction phase diagram.
Loading a multi-focus phase diagram through a spatial light modulator, focusing a laser beam through a processing objective lens, and generating a plurality of focuses in front of and behind a focal plane, wherein the number and the distance of the focuses are adjusted through different phase diagrams; aberration correction phase diagrams under different depths are loaded through the spatial light modulator to correct the phenomenon of focal spot stretching and poor focusing under different processing depths caused by refractive index mismatch, so that processing consistency is improved.
As shown in fig. 2, a strong spherical aberration phenomenon is caused by refractive index mismatch when a concentrated laser beam passes through an interface between an air medium and a material having different refractive indexes during laser stealth cutting. The spherical aberration phenomenon causes significant focus shift, stretching and distortion of the focal spot, and becomes more pronounced as the machining depth increases. Aiming at the compensation correction of spherical aberration caused by refractive index mismatch, the invention loads an aberration correction phase diagram onto a spatial light modulator to realize the phase light field modulation of incident light so as to realize the compensation of spherical aberration.
By carrying out phase modulation on a laser focus focused inside a material to be processed, the spherical aberration compensation specific formula is as follows:
wherein lambda is the laser wavelength, rho is the normalized pupil radius of laser emission, d nom For any depth inside the material to be processed, n 1 =1 is the refractive index of air, n 2 The refractive index of the material to be processed is NA, the NA is the numerical aperture of the femto-second laser emergent objective lens, and phi is the spherical aberration correction phase; by substituting each parameter, an aberration correction phase map with a resolution of 1920×1080 and a bit depth of 8 can be calculated by MATLAB software or PYTHON software.
As shown in fig. 3, the dual focus is hidden, the light beam is phase modulated by the spatial light modulator, reaches the processing objective lens after passing through the 4f system, is focused in the silicon wafer to generate two focuses, and is aberration corrected, and the two axial focuses can be generated by controlling the phase diagram loaded by the spatial light modulator. The focal distance can be adjusted by means of a phase diagram. The silicon wafer bifocal undercut and aberration correction effect is shown in fig. 4.
As shown in fig. 5, the tri-focal point is hidden, the light beam is phase modulated by the spatial light modulator, reaches the processing objective lens after passing through the 4f system, is focused in the silicon wafer to generate three focal points, and the three axial focal points can be generated by controlling the phase diagram loaded by the spatial light modulator. The focal distance can be adjusted by means of a phase diagram. As shown in fig. 6, the silicon wafer is cut into three focus points and the aberration correction effect is shown.
On the one hand, the laser beam is subjected to phase modulation through the spatial light modulator, reaches a processing objective lens after passing through a 4f system, is focused in a silicon wafer to generate a plurality of focuses, performs aberration correction, and generates a plurality of axial focuses by controlling a phase diagram loaded by the spatial light modulator; the focal distance can be adjusted by means of a phase diagram. On the other hand, the spherical aberration phenomenon caused by the mismatch of the refractive indexes in the process of the hidden cutting of the silicon wafer is corrected by the light spot shaping technology of the spatial light modulator, so that the consistency and the processing quality of the hidden cutting of the silicon wafer are improved.
In summary, the spatial light modulator is used for loading the axial multi-focus phase diagram and the aberration correction phase diagram, generating a plurality of focuses in the semiconductor material and performing aberration correction, controlling the number of the focuses and the distance by loading different phase diagrams, and controlling the aberration correction by the aberration correction phase diagram;
the controllable axial multi-focus generated by the spatial light modulator is used for invisible cutting of the semiconductor material, so that the invisible cutting efficiency of the semiconductor material is greatly improved, and the method is popularized to the precision machining of brittle semiconductor materials such as silicon wafers, gallium arsenide, indium phosphide, gallium nitride and the like and glass materials;
the spherical aberration phenomenon caused by refractive index mismatch in the process of the hidden cutting of the semiconductor material is corrected by the light spot shaping technology of the spatial light modulator, so that the consistency and the processing quality of the hidden cutting of the semiconductor material are improved;
aiming at thicker semiconductor materials (> 300 mu m), the traditional hidden cutting method needs 5-6 times of cutting, the processing speed is about 300mm/s, the cutting times are 1-2 times, and the processing speed is more than 500mm/s;
loading a multi-focus phase diagram through a spatial light modulator, and generating a plurality of focuses before and after a laser beam is focused by a processing objective lens, wherein the number and the distance of the focuses can be adjusted through different phase diagrams;
aberration correction phase diagrams under different depths are loaded through the spatial light modulator to correct focal spot stretching, poor focusing and other phenomena under different processing depths caused by refractive index mismatch, and processing consistency is improved.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention. It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily appreciate variations or alternatives within the scope of the present invention.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Claims (9)
1. Laser cutting device based on two spatial light modulator, its characterized in that: the laser device comprises a laser device (1), wherein a beam expander (2), a power attenuation module (3), a first spatial light modulator (4) for loading a multi-focus phase diagram and a second spatial light modulator (8) for loading an aberration correction phase diagram are sequentially arranged on an output light path of the laser device (1), a first convex lens (5), a first reflecting mirror (6) and a second convex lens (7) are sequentially arranged on a light path between the first spatial light modulator (4) and the second spatial light modulator (8), a third convex lens (9), a second reflecting mirror (10), a fourth convex lens (11) and a third reflecting mirror (12) are sequentially arranged on an output light path of the second spatial light modulator (8), and a processing objective lens (13) is arranged on a reflecting light path of the third reflecting mirror (12).
2. The dual spatial light modulator-based laser cutting device of claim 1, wherein: the laser (1) is a near infrared laser, a green laser or an ultraviolet laser with a pulse width of nanoseconds, picoseconds or femtoseconds.
3. The dual spatial light modulator-based laser cutting device according to claim 1 or 2, wherein: the laser (1) is a near infrared laser with a wavelength of 1064nm or 1080nm, or a green laser with a wavelength of 532nm or 515nm, or an ultraviolet laser with a wavelength of 355nm or 343nm.
4. The dual spatial light modulator-based laser cutting device according to claim 1 or 2, wherein: the laser (1) is a laser with the laser emitting frequency of 10-100 KHz, the average power of 0-10W and the repetition frequency of 10-100 KHz.
5. The dual spatial light modulator-based laser cutting device of claim 1, wherein: the first spatial light modulator (4) and the second spatial light modulator (8) are spatial light modulators with wavelengths of 300 nm-1100 nm and pixels higher than 30 ten thousand.
6. The dual spatial light modulator-based laser cutting device of claim 1, wherein: the focal length of the first convex lens (5) is the same as the focal length of the second convex lens (7).
7. The method for realizing the laser cutting method based on the double spatial light modulators by using the device as claimed in claim 1, wherein the method comprises the following steps: the laser output by the laser device (1) is amplified and collimated by the beam expander (2), the power attenuation module (3) adjusts the laser power, the laser power density of the laser incident to the first spatial light modulator (4) is lower than a threshold value, the first spatial light modulator (4) loads a multi-focus phase diagram and reflects transmission laser, the first reflecting mirror (6) changes the light path transmission direction, the first convex lens (5) and the second convex lens (7) form a 4f system, an image is transmitted to the second spatial light modulator (8), the second spatial light modulator (8) loads an aberration correction phase diagram, the second reflecting mirror (10) and the third reflecting mirror (12) change the light path transmission direction, the third convex lens (9) and the fourth convex lens (11) form a 4f system, the laser light spot is contracted and transmitted, the laser beam completely passes through the caliber of the processing objective (13), and the laser output by the processing objective (13) generates a plurality of axial focuses along the light beam transmission direction inside the processed material (14) and carries out aberration correction, so that the processed material is cut.
8. The dual spatial light modulator-based laser cutting method as set forth in claim 7, wherein: the axial multi-focus phase diagram is loaded through the first spatial light modulator (4) and the aberration correction phase diagram is loaded through the second spatial light modulator (8), a plurality of focuses are generated in the semiconductor material and aberration correction is carried out, the number of the focuses and the distance are controlled through loading different phase diagrams, and the aberration correction is controlled through the aberration correction phase diagram.
9. The dual spatial light modulator-based laser cutting method as set forth in claim 7, wherein: loading a multi-focus phase diagram through a spatial light modulator, focusing a laser beam through a processing objective lens, and generating a plurality of focuses in front of and behind a focal plane, wherein the number and the distance of the focuses are adjusted through different phase diagrams; the aberration correction phase diagrams under different depths are loaded by the spatial light modulator to correct the phenomenon of focal spot stretching and poor focusing under different processing depths caused by refractive index mismatch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311144172.1A CN117206698A (en) | 2023-09-06 | 2023-09-06 | Laser cutting device and method based on double spatial light modulators |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311144172.1A CN117206698A (en) | 2023-09-06 | 2023-09-06 | Laser cutting device and method based on double spatial light modulators |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117206698A true CN117206698A (en) | 2023-12-12 |
Family
ID=89034608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311144172.1A Pending CN117206698A (en) | 2023-09-06 | 2023-09-06 | Laser cutting device and method based on double spatial light modulators |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117206698A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118324400A (en) * | 2024-06-17 | 2024-07-12 | 苏州卡门哈斯激光技术有限责任公司 | Laser glass cutting system based on 3D beam shaping |
-
2023
- 2023-09-06 CN CN202311144172.1A patent/CN117206698A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118324400A (en) * | 2024-06-17 | 2024-07-12 | 苏州卡门哈斯激光技术有限责任公司 | Laser glass cutting system based on 3D beam shaping |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI652129B (en) | Multi-section focusing lens element and method of operating a laser processing system for cutting or cutting a wafer | |
| US20120234807A1 (en) | Laser scribing with extended depth affectation into a workplace | |
| TWI677394B (en) | Method of closed form release for brittle materials using burst ultrafast laser pulses | |
| JP2015519722A (en) | Laser scribing with high depth action in the workpiece | |
| CN107148324A (en) | Multi-laser system and method for cutting and cutting post-processing hard dielectric substance | |
| CN117206698A (en) | Laser cutting device and method based on double spatial light modulators | |
| US20130256286A1 (en) | Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths | |
| JP6680494B2 (en) | Laser processing method and laser processing apparatus | |
| US11020821B2 (en) | Cutting device for thin semiconductor wafer and cutting method thereof | |
| JP2018523291A (en) | Method for scribing semiconductor workpiece | |
| WO2021036155A1 (en) | Bessel beam with axicon for cutting transparent material | |
| KR102131764B1 (en) | Thermal processing by transmission of mid infra-red laser light through semiconductor substrate | |
| JP6385622B1 (en) | Laser processing method and laser processing apparatus | |
| CN104526160B (en) | A kind of laser processing and laser-processing system | |
| CN220838465U (en) | Laser cutting device based on double spatial light modulators | |
| US20200061750A1 (en) | Mitigating low surface quality | |
| TW201446378A (en) | Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths | |
| CN113601027A (en) | Double-laser composite invisible cutting method and processing system | |
| US20180257170A1 (en) | Controlled separation of laser processed brittle material | |
| TW201722605A (en) | Laser cutting method of brittle material, and laser cutter to reduce the temperature difference between the focused point and the surroundings of the processed material resulted from the over-concentrated distribution of laser beam energy | |
| CN115194343A (en) | Double-pulse laser processing method and device | |
| CN106994562A (en) | The laser cutting method and laser cutting machine of hard brittle material | |
| Smarra et al. | Ultra-short pulse laser beam shaping for microstructuring using a deformable mirror | |
| CN207557590U (en) | Laser beam shaping device and new pattern laser light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |