CN117199201A - High-heat-dissipation reflecting structure, manufacturing method, LED chip and LED display module - Google Patents

Abstract

The invention discloses a high-heat-dissipation reflecting structure, which comprises a plurality of material layers, wherein each material layer comprises a plurality of first material layers and a plurality of second material layers, one of the first material layers and the second material layers is a high-refractive-index material layer, the other one of the first material layers and the second material layers is a low-refractive-index material layer, the plurality of first material layers and the plurality of second material layers are alternately stacked to form a reflecting unit, the reflecting unit comprises an upper surface, a lower surface opposite to the upper surface and a side surface connecting the upper surface and the lower surface, the first material layers are made of high heat-conducting materials, the side surface of the reflecting unit is wrapped by the high heat-conducting materials which are the same as the materials of the first material layers to form a communicating layer, and all the first material layers are communicated together by the communicating layer to form a complete heat-conducting passage. The invention also discloses a corresponding manufacturing method, a high-heat-dissipation LED chip and an LED display module using the reflecting structure. The reflection structure has good heat dissipation effect, and can effectively improve the heat dissipation effect and prolong the service life of the LED chip.

Description

High-heat-dissipation reflecting structure, manufacturing method, LED chip and LED display module

Technical Field

The present invention relates to fabrication of semiconductor chips, and more particularly, to a structure of a reflective layer on an LED chip and fabrication thereof.

Background

In the application of the LED chip, the LED chip is applied to the fields of illumination, a liquid crystal display backlight module, LED direct display and the like. In current LED chips, various ways are used to increase brightness, such as patterned substrates, distributed bragg reflective layers, etc. Referring to chinese patent CN114975715 a, an existing LED chip is formed with a DBR-compliant reflective layer on the side of the epitaxial layer away from the substrate. However, the DBR reflective layer has a conventional reflective layer structure, so that the heat dissipation effect is poor, and as the power of the LED increases, the junction temperature in the LED increases, and the service life of the LED is reduced.

Therefore, a method and structure for solving the above problems are urgently needed.

Disclosure of Invention

The invention aims to provide a reflecting structure with high heat dissipation, a manufacturing method and an LED chip, and provides a novel DBR reflecting structure, wherein a material layer of the novel DBR reflecting structure is of a high heat conduction structure, and then a plurality of high heat conduction structures in the DBR reflecting structure are communicated together to form a complete heat conduction path, so that the overall heat dissipation effect of the DBR reflecting structure is improved.

In order to achieve the above object, the present invention discloses a reflective structure with high heat dissipation, which comprises a plurality of material layers, wherein the material layers comprise a plurality of first material layers and a plurality of second material layers, one of the first material layers and the second material layers is a high refractive index material layer, the other one is a low refractive index material layer, the plurality of first material layers and the plurality of second material layers are alternately stacked to form a reflective unit, the reflective unit comprises an upper surface, a lower surface opposite to the upper surface, and a side surface connecting the upper surface and the lower surface, the first material layers are made of a high heat conduction material, the side surface of the reflective unit is wrapped by the same high heat conduction material as the first material layers to form a communication layer, and the communication layer enables all the first material layers to be communicated together to form a complete heat conduction path.

Preferably, the upper surface of the reflecting unit is fully covered with the same high heat conductive material as the first material layer to form a communication material layer integrally communicated with the communication layer; or the uppermost material layer of the reflecting unit is a first material layer, so that the uppermost material layer of the reflecting unit is a communication material layer integrally communicated with the communication layer.

Preferably, the communication layer includes a first communication layer formed on an outer side surface of the reflection unit and communicating all the first material layers.

Preferably, the upper surface of the reflecting layer structure is provided with a groove or a concave hole penetrating through the reflecting unit or a groove or a concave hole extending to the lowest material layer of the reflecting unit, and the communication layer comprises a second communication layer formed on the side wall of the groove or the concave hole and communicated with all the first material layers.

Specifically, the communication layer further comprises a third communication layer formed at the bottom of the groove or the concave hole or forming the bottom of the groove or the concave hole, and the third communication layer is integrally connected with the second communication layer.

Specifically, the cross-sectional area of the groove or the concave hole is gradually increased from bottom to top, so that the groove or the concave hole is gradually increased from bottom to top.

Preferably, the material layer of the lowermost layer of the reflecting structure is the first material layer or the second material layer.

Preferably, in the reflection unit, the area of the material layer is gradually reduced from bottom to top, and the material layer of the upper layer is completely stacked on the material layer of the lower layer.

Specifically, the outer side surfaces of the first material layer and the second material layer extend along the vertical direction to form a step structure, the communication layer comprises a first communication layer formed on the step structure, and the first communication layer is in a step shape.

Preferably, the high thermal conductivity material is diamond.

The invention also discloses a manufacturing method of the reflecting structure with high heat dissipation, which comprises the following steps: alternately depositing a low refractive index material and a high refractive index material to form a reflecting unit composed of a plurality of first material layers and a plurality of second material layers which are alternately stacked, wherein the material forming the first material layers is a high heat conduction material; and depositing a high heat conduction material which is the same as the first material layer on the side surface of the reflecting unit to form a communication layer, wherein the communication layer enables all the first material layers to be communicated together to form a complete heat conduction path.

Preferably, when the uppermost material layer of the reflecting unit is a second material layer, a high heat conduction material which is the same as the first material layer is deposited on the uppermost second material layer to form a communication material layer which is integrally communicated with the communication layer, and when the uppermost material layer of the reflecting unit is a first material layer, the uppermost first material layer is a communication material layer which is integrally communicated with the communication layer.

Preferably, depositing a high thermal conductivity material of the same material as the first material layer on the side surface of the reflection unit to form a communication layer specifically includes: and depositing a high heat conduction material which is the same as the first material layer on the outer side surface of the reflecting unit to form a first communication layer which covers the outer side walls of the first material layer and the second material layer, wherein the communication layer comprises the first communication layer.

Preferably, depositing a high thermal conductivity material of the same material as the first material layer on the side surface of the reflection unit to form a communication layer specifically includes: the upper layer surface of the reflecting unit is provided with a groove or concave hole penetrating through the reflecting unit or extending to the lowest layer of the reflecting structure, the side wall of the groove or concave hole is deposited with a high heat conduction material which is the same as the material of the first material layer so as to form a second communication layer communicated with all the first material layer, and the communication layer comprises a second communication layer.

Specifically, the manufacturing method of the reflecting structure further deposits a high heat conduction material which is the same as the material of the first material layer at the bottom of the groove or the concave hole so as to be positioned on a third communication layer at the bottom of the groove or the concave hole, and the third communication layer is integrally connected with the second communication layer.

Specifically, the cross-sectional area of the groove or the concave hole is gradually increased from bottom to top, so that the groove or the concave hole is gradually increased from bottom to top.

Preferably, the material layer of the lowermost layer of the reflecting structure is the first material layer or the second material layer.

Preferably, when the low refractive index material and the high refractive index material are alternately deposited, the area of the upper layer of the material is smaller than that of the lower layer of the material, and the upper layer of the material is completely stacked on the lower layer of the material.

Specifically, before depositing the communication layer, removing edge portions from the outer side surfaces of the first material layer and the second material layer to form a step structure; and depositing the high heat conduction material which is the same as the first material layer on the step structure when depositing the communication layer to form a step-shaped first communication layer, wherein the communication layer comprises the first communication layer.

Preferably, the high thermal conductivity material is diamond.

The invention discloses a high-heat-dissipation LED chip, which comprises an epitaxial layer and a reflecting layer formed on one side of the epitaxial layer, which is far away from a light-emitting surface of the LED chip, wherein the reflecting layer is of the reflecting structure, the lower surface of the reflecting structure is contacted with the epitaxial layer, and the upper surface of the reflecting structure is far away from the epitaxial layer.

Preferably, the high heat dissipation LED chip further includes an electrode, a through hole corresponding to the electrode is formed on the reflective layer, a portion of the electrode is exposed outside the reflective layer, and a portion of the electrode passes through the through hole and is electrically connected with the N-type layer and the P-type layer in the epitaxial layer correspondingly.

The invention also discloses an LED display module, which comprises a circuit substrate and an LED chip welded on the circuit substrate, wherein the LED chip is the LED chip with high heat dissipation, an electrode on one side of the LED chip far away from the light emitting surface is welded with a bonding pad on the circuit substrate, and the upper surface and the outer side surface of the reflecting structure are exposed out of the surface of the circuit substrate so as to rapidly disperse and output heat generated by the light emission of the LED chip.

Compared with the prior art, the novel DBR reflection structure is provided, one type of material layer is made of the high heat conduction structure, and then a plurality of high heat conduction structures in the reflection structure are communicated together to form a complete heat conduction path, so that the overall heat dissipation effect of the reflection structure is improved. The reflection structure is used in the LED chip, can greatly improve the heat dissipation effect of the LED chip, provides the service life of the LED chip, and can be used for high-power LEDs.

Drawings

Fig. 1 is a structural diagram of a reflection structure with high heat dissipation in embodiment 1 of the present invention.

Fig. 2 is a structural diagram of a reflection structure with high heat dissipation in embodiment 2 of the present invention.

Fig. 3 is a structural diagram of a reflection structure with high heat dissipation in embodiment 3 of the present invention.

Fig. 4 is a structural diagram of a reflection structure with high heat dissipation in embodiment 4 of the present invention.

Fig. 5 is a structural diagram of a reflection structure with high heat dissipation in embodiment 5 of the present invention.

Fig. 6 is a structural diagram of a reflection structure with high heat dissipation in embodiment 6 of the present invention.

Fig. 7 is a block diagram of a high heat dissipation LED chip of the present invention.

Fig. 8 is a structural view of the LED display module of the present invention.

Detailed Description

In order to describe the technical content, the constructional features, the achieved objects and effects of the present invention in detail, the following description is made in connection with the embodiments and the accompanying drawings.

Example 1:

referring to fig. 1, the invention discloses a method for manufacturing a reflection structure 100 with high heat dissipation, which comprises the following steps: step S11 to step S12.

In step S11, a low refractive index material and a high refractive index material are alternately deposited to form a reflective unit composed of a plurality of first material layers 11 and a plurality of second material layers 12 alternately stacked, and the material forming the first material layers 11 is a high thermal conductive material.

The first material layer 11 may be a high refractive index material or a low refractive index material, and when the first material layer 11 is a high refractive index material, the second material layer 12 is a low refractive index material; when the first material layer 11 is a low refractive index material, the second material layer 12 is a high refractive index material.

The lowermost material layer is the first material layer 11, so that the reflective structure 100 has better heat conduction and dissipation effects.

In this embodiment, the high heat conductive material is diamond, however, other materials may be selected as the high heat conductive material, such as graphene, and the method is not limited to diamond.

In this embodiment, the first material layer 11 is a diamond layer, and the material used is a high refractive index material, specifically deposited by MPCVD. The second material layer 12 is a silicon dioxide layer, and the material used is a low refractive index material, specifically deposited by electron beam evaporation. Of course, the high refractive index material and the low refractive index material are not limited thereto, and the specific deposition method is not limited thereto.

In step S12, a high heat conductive material is deposited on the side of the reflecting unit, which is the same as the first material layer 11, to form a communication layer 13, and the communication layer 13 connects all the first material layers 11 together to form a complete heat conductive path.

When the uppermost material layer of the reflecting unit is the second material layer 12, a high heat conductive material which is the same as the first material layer 11 is deposited on the uppermost second material layer 12 to form a communication material layer 130 which is integrally communicated with the communication layer 13; when the uppermost material layer of the reflecting unit is the first material layer 11, the uppermost first material layer 11 is the communication material layer 130 integrally connected to the communication layer 13. Finally, the uppermost material layer is made to be the first material layer 11. The scheme makes the upper layer and the lower layer of the reflecting structure 100 be the first material layer 11 with high heat conductivity, and all the first material layers 11 are communicated together, so that the whole reflecting structure 100 and the reflecting structure 100 are distributed with enough heat conducting structures, the heat dissipation performance is good, and the heat is conveniently transferred from the lowest layer to the uppermost layer of the reflecting structure.

Preferably, depositing a high thermal conductivity material of the same material as the first material layer 11 on the side of the reflective unit to form the communication layer 13 specifically includes: a high heat conductive material having the same material as the first material layer 11 is deposited on the outer side surface of the reflection unit to form a first communication layer 131 covering the outer side walls of the first material layer 11 and the second material layer 12, and the communication layer 13 includes the first communication layer 131. This embodiment allows the high thermal conductivity material to be joined as a unit by the first communication layer 131 at the edge, forming a complete thermal conduction path.

Preferably, when the low refractive index material and the high refractive index material are alternately deposited, the area of the upper layer of the material is smaller than that of the lower layer of the material, and the upper layer of the material is completely stacked on the lower layer of the material.

Preferably, before depositing the communication layer 13 in step S12, the outer side surfaces of the first material layer 11 and the second material layer 12 are removed to form a step structure; in depositing the communication layer, the high thermal conductive material same as the first material layer 11 is deposited on the step structure to form a step-shaped first communication layer 131, the communication layer including the first communication layer 131. The first communication layer 131 may surround the entire outer side of the reflection unit, or may cover only a partial area of the outer side of the reflection unit, and only needs to communicate with each first material layer 11 from top to bottom. Wherein, the upper layer can not completely cover the lower layer, and finally, a high heat conduction material covering the step is deposited on the mesa structure of the reflecting unit (the reflecting unit is in a mesa shape with a small upper part and a large lower part) as the communication layer 13.

Referring to fig. 1, a reflective structure 100 manufactured by the manufacturing method of the present embodiment includes a plurality of material layers, the material layers include a plurality of first material layers 11 and a plurality of second material layers 12, one of the first material layers 11 and the second material layers 12 is a high refractive index material layer, the other is a low refractive index material layer, the plurality of first material layers 11 and the plurality of second material layers 12 are alternately stacked to form a reflective unit, the reflective unit includes an upper surface, a lower surface opposite to the upper surface, and a side surface connecting the upper surface and the lower surface, the first material layers 11 are made of a high heat conductive material, the side surface of the reflective unit is wrapped with the same high heat conductive material as the first material layers 11 to form a communication layer 13, and the communication layer 13 connects all the first material layers 11 together to form a complete heat conductive path.

In the reflecting unit, the area of the material layer is gradually reduced from bottom to top, and the material layer of the upper layer is completely stacked on the material layer of the lower layer.

Specifically, the outer side surfaces of the first material layer 11 and the second material layer 12 extend in the vertical direction to form a step structure, and the communication layer includes a first communication layer 131 formed on the step structure, and the first communication layer 131 is in a step shape.

In this embodiment, the entire reflective structure 100 has a trapezoid-shaped step shape, and the side surface has a step shape (terrace shape). The trapezoid table can be a trapezoid table with square and rectangular bottom surfaces, or a trapezoid table with a round shape or other polygons.

Wherein the upper surface of the reflecting unit is entirely covered with the same high heat conductive material as that of the first material layer 11 to form a communication material layer 130 integrally communicating with the communication layer 13. Alternatively, the uppermost material layer of the reflecting unit is the first material layer 11, so that the uppermost first material layer 11 of the reflecting unit is the communication material layer 130 integrally communicating with the communication layer 13.

Preferably, the communication layer 13 includes a first communication layer 131 formed on the outer side surface of the reflection unit and communicating all of the first material layers 11. The first communication layer 131 is stepped. The first communication layer 131 may surround the entire outer side of the reflection unit, or may cover only a partial area of the outer side of the reflection unit, and only needs to communicate with each first material layer 11 from top to bottom.

The heat conduction path of the embodiment connects a plurality of high heat conduction structures in the reflecting unit together to form a complete structure, so that the overall heat dissipation effect of the reflecting structure is improved.

In this embodiment, the number of alternating deposition of the low refractive index material layer and the high refractive index material layer in the reflective structure 100 is greater than 5. In this embodiment, the reflective structure 100 has a thickness of 2-5 μm.

Example 2:

referring to fig. 2, unlike embodiment 1, in this embodiment, the lowermost material layer is the second material layer 12.

Example 3:

unlike the embodiment, in this embodiment, the upper material layer and the lower material layer have the same shape and size, and the outside of the reflection unit is not provided with the first communication layer 131.

In an embodiment, depositing a high thermal conductivity material of the same material as the first material layer 11 on the side of the reflective unit to form a communication layer specifically includes: a groove or concave hole 14 penetrating the reflecting unit or a groove or concave hole 14 extending to the lowest material layer of the reflecting structure 100 is formed on the upper layer surface (from the uppermost material layer) of the reflecting unit, a high heat conduction material which is the same as the material of the first material layer 11 is deposited on the side wall of the groove or concave hole 14 so as to form a second communication layer 132 which is communicated with all the first material layers 11, and the communication layer comprises the second communication layer 132.

Referring to fig. 3, if the recess or recess 14 extends to the lowest layer of the reflective structure 100, and the lowest material layer is the first material layer 11, the second communication layer 132 directly communicates with the first material layer 11 at the bottom of the recess or recess 14, and the portion of the first material layer exposed at the bottom of the recess or recess 14 is the third communication layer 133.

The lowest material layer is the first material layer 11, so that the reflection unit has better heat conduction and dissipation effects.

Preferably, if the groove or recess 14 penetrates the reflecting unit, a high heat conductive material identical to the material of the first material layer 11 is deposited on the sidewall of the groove or recess 14 to form a second communication layer 132 communicating all the first material layers 11, and a high heat conductive material identical to the material of the first material layer 11 is deposited on the bottom of the groove or recess 14 to form a third communication layer 133 located on the bottom of the groove or recess 14, and the third communication layer 133 is integrally connected with the second communication layer 132. Preferably, the above process of depositing the same high thermal conductive material as the material of the first material layer 11 on the sidewalls and bottom of the recess or pit 14 can be completed at one time.

In this embodiment, the recess or well 14 is formed by a photolithographic process through-hole in the reflective element. Of course, the highly thermally conductive material may also directly fill the grooves or recesses 14.

In this embodiment, the recess or well 14 is a longitudinal well extending in a vertical direction. The top of the recess or well 14 may be formed in the middle region of the upper surface of the reflecting unit, or may be formed in the edge region of the upper surface of the reflecting unit, or may even be recessed directly on the outer side of the reflecting unit. One reflection unit may have a structure of one groove or recess 14 and the corresponding communication layer 13, or may have a structure of a plurality of grooves or recesses 14 and the corresponding communication layer 13.

In this embodiment, the recess or well 14 is a cylindrical well.

According to the embodiment, the length of the heat conduction path in the transverse direction is shortened, and the heat dissipation effect of the reflecting unit is improved.

Example 4:

referring to fig. 4, unlike embodiment 3, in this embodiment, the lowermost material layer is the second material layer 12.

In this embodiment, if the groove or recess 14 penetrates the reflecting unit, in addition to depositing a high thermal conductive material which is the same as the material of the first material layer 11 on the sidewall of the groove or recess 14 to form the second communication layer 132 which communicates all the first material layers 11, a high thermal conductive material which is the same as the material of the first material layer 11 is deposited on the bottom of the groove or recess 14 to form the third communication layer 133 which is located on the bottom of the groove or recess 14, and the third communication layer 133 is integrally connected with the second communication layer 132. The communication layer includes a second communication layer 132 and a third communication layer 133.

Of course, it is also possible to extend the grooves or recesses 14 to the lowermost second material layer 12, and then deposit a third communication layer 133 integrally connected to the second communication layer 132 at the bottom of the grooves or recesses 14. The recess or recess bottom now comprises a portion of the second material layer 12 and a third communication layer 133 deposited on the portion of the second material layer 12. In another embodiment, the groove or recess 14 may be extended onto the first material layer 11 of the lowermost layer, and then the first material layer 11 exposed at the bottom of the groove or recess 14 is used as the third communication layer 133 without additionally depositing the third communication layer, where the bottom of the groove or recess 14 includes a portion of the second material layer 12 and the first material layer 11 as the third communication layer 133 deposited on the portion of the second material layer 12.

In this embodiment, the bottom of the recess or hole 14 is preferably formed of only one layer of material of high thermal conductivity. That is, the third communication layer 133 made of a high heat conductive material directly constitutes the bottom of the groove or recess 14.

Example 5:

referring to fig. 5, unlike the third embodiment, in this embodiment, the cross-sectional area of the groove or recess 14a formed in the reflection unit is gradually increased from bottom to top so that the groove or recess 14a is gradually increased from bottom to top, i.e., the groove or recess 14a is chamfered.

Unlike the third embodiment, in this embodiment, when a low refractive index material and a high refractive index material are alternately deposited, the area of the upper one of the material layers is smaller than that of the lower one of the material layers, and the upper one of the material layers is completely stacked on the lower one of the material layers.

Preferably, before the deposition of the communication layer in step S12, the outer side surfaces of the first material layer 11 and the second material layer 12 are removed from the edge portion so that the outer side surface of the longitudinal section passing through the center of the reflection unit is an inclined straight line, and the outer side surface of the reflection unit is a corresponding inclined plane, an inclined conical curved surface or other surface projected as an inclined straight line in the vertical direction. In the depositing of the communication layer in step S12, the high thermal conductive material which is the same as the material of the first material layer 11 is deposited on the outer side surface of the reflection unit to form a first communication layer 131a, and the communication layer 13a includes the first communication layer 131a, and the first communication layer 131a is a corresponding inclined plane or inclined conical surface, etc. The first communication layer 131a may surround the entire outer side of the reflection unit, or may cover only a partial area of the outer side of the reflection unit, and only needs to communicate each first material layer 11 from top to bottom.

In this embodiment, after the first material layer 11 and the second material layer 12 are deposited, before the communication layer 13 is deposited, chamfering photolithography is performed on the outer side of the reflective unit by using a photolithography process, the chamfering angle is 60 degrees (of course, the chamfering angle may also be selected to have other degrees, for example, 50 degrees, etc.), and finally the first communication layer 131a covering the outer side of the reflective unit is deposited on the outer side of the reflective unit, so that the respective first material layers 11 are communicated to provide a heat conduction path.

With continued reference to fig. 5, the communication layer 13a further includes a second communication layer 132a deposited on the sidewall of the recess or pit 14a, where the second communication layer 132a is made of the same material as the first material layer 11, and the sidewall of the recess or pit 14a is an inclined wall facing upwards, so that the deposition of the material of the second communication layer 132 is facilitated. In this embodiment, the groove or recess 14a penetrates the reflecting unit, and then a high thermal conductive material identical to the material of the first material layer 11 is deposited on the bottom of the groove or recess 14a to form a third communication layer 133, and the third communication layer 133 forms the bottom of the groove or recess 14a and is integrally connected with the second communication layer 132 a. In this way, the first communication layer 131a, the second communication layer 132a, the third communication layer 133, the uppermost communication material layer 130, and the lowermost first material layer 11 are integrally connected to each other and all the first material layers 11 in the middle, so as to form a heat conduction path that extends over the entire reflective structure and is uniformly distributed inside the reflective structure. The first communication layer 131a, the second communication layer 132a, the third communication layer 133, and the uppermost communication material layer 130 may be formed by one deposition.

Of course, in another embodiment, the bottom of the groove or recess 14a may extend to the first material layer 11 at the lowest layer, and then the portion of the first material layer 11 exposed at the bottom of the groove or recess 14a is referred to as the third communication layer 133 integrally connected to the second communication layer 132 a.

In this embodiment, the first material layer 11 is a diamond layer, and the material used is a high refractive index material, specifically deposited by MPCVD. The second material layer 12 is a silicon dioxide layer, and the material used is a low refractive index material, specifically deposited by electron beam evaporation.

Of course, the first communication layer 131a may be provided in the same configuration as the first communication layer 131 in the first embodiment.

In this embodiment, the entire reflective structure is in a trapezoidal table shape, and the side surface is a smooth curved surface or a plane. The trapezoid table can be a trapezoid table with square and rectangular bottom surfaces, or a trapezoid table with a round shape or other polygons.

The present embodiment has the advantages of both the first and third embodiments.

Example 6:

referring to fig. 6, unlike embodiment 5, in this embodiment, the lowermost material layer is the second material layer 12.

In this embodiment, if the groove or recess 14a penetrates the reflecting unit, a high heat conductive material identical to the material of the first material layer 11 is deposited on the sidewall of the groove or recess 14a to form a second communication layer 132a communicating all the first material layers 11, and a high heat conductive material identical to the material of the first material layer 11 is deposited on the bottom of the groove or recess 14a to form a third communication layer 133 located on the bottom of the groove or recess 14a, and the third communication layer 133 is integrally connected with the second communication layer 132 a.

Of course, it is also possible to extend the grooves or recesses 14a to the lowermost second material layer 12, and then deposit a third communication layer 133 integrally connected to the second communication layer 132a at the bottom of the grooves or recesses 14 a. The bottom of the recess or recess 14a includes a first portion of the second material layer 12 exposed at the bottom of the recess or recess 14a and a third communication layer 133 deposited on the first portion. In another embodiment, the groove or recess 14a may be extended onto the first material layer 11 at the lowermost layer, and then the second portion of the first material layer 11 exposed at the bottom of the groove or recess 14a is used as the third communication layer 133, without depositing the third communication layer, where the bottom of the groove or recess 14a includes the first portion of the second material layer 12 exposed at the bottom of the groove or recess 14a and the second portion deposited on the first portion.

In this embodiment, it is preferable that the bottom of the recess or hole 14a is formed of only one material layer of high heat conductive material. That is, the third communication layer 133 made of a high heat conductive material directly constitutes the bottom of the groove or recess hole 14 a.

Referring to fig. 7, the invention discloses a high heat dissipation LED chip 200, which comprises an epitaxial layer 20 and a reflective layer formed on a side of the epitaxial layer 20 away from a light emitting surface of the LED chip 200, wherein the reflective layer 100 is the reflective structure 100. Wherein the lower surface of the reflective structure 100 contacts the epitaxial layer 20 and the upper surface is remote from the epitaxial layer 20.

Referring to fig. 7, the epitaxial layer 20 includes an N-type layer 21, a light emitting layer 22, and a P-type layer 23.

Referring to fig. 7, the led chip 200 further includes a substrate 31 connected to the light emitting surface side of the epitaxial layer 20.

The epitaxial layer 20 may further include an electron blocking layer between the light emitting side 22 and the P-type layer 23, a buffer layer between the substrate 31 and the N-type layer 21, and an intrinsic semiconductor layer, among others. A buffer layer is on the substrate, an intrinsic semiconductor layer is formed on the buffer layer, and an N-type layer 21 is formed on the intrinsic semiconductor layer.

Referring to fig. 7, the LED chip 200 with high heat dissipation further includes an electrode 32, a through hole corresponding to the electrode 32 is formed on the reflective layer 100, the electrode 32 is partially exposed out of the reflective layer 100, and a portion of the electrode is electrically connected to the N-type layer 21 and the P-type layer 23 in the epitaxial layer 20 through the through hole.

In this embodiment, the electrode 32 also fills a portion of the recess or cavity 14 of the reflective layer 100, so that a portion of the heat is rapidly conducted away from the electrode 32.

In this embodiment, the electrode 32 includes a p-electrode including a lower p-electrode and an upper p-electrode, and an n-electrode including a lower n-electrode and an upper n-electrode. Of course, without being limited thereto, the lower p electrode and the upper p electrode may be of an integral structure such that the p electrode is of an integral structure, and the lower n electrode and the upper n electrode may be of an integral structure such that the n electrode is of an integral structure without dividing the upper electrode and the lower electrode.

Wherein a transparent conductive layer is further provided between the p-electrode and the p-type layer 23.

In this embodiment, the reflecting structure 100 has good heat dissipation performance, the lower surface of the reflecting structure 100 contacts the epitaxial layer, the upper surface forms the outer surface of the whole LED chip 200, the reflecting structure 100 reflects the light emitted by the LED chip 20 when the LED chip 200 is used, and emits the light out of the light emitting surface, and the heat generated by the light emission of the LED chip 20 is rapidly output through the heat conduction path made of the high heat conduction material, so that the external quantum efficiency of the LED chip can be improved.

Referring to fig. 8, the present invention further discloses an LED display module 300, which includes a circuit substrate 40 and an LED chip 200 soldered on the circuit substrate 40, wherein an electrode 32 on a side of the LED chip 200 away from the light emitting surface is soldered with a bonding pad 41 on the circuit substrate 40, and the upper surface and the outer side of the reflective structure 100 are exposed outside the board surface of the circuit substrate 40 to rapidly disperse and output heat generated by the light emission of the LED chip 200.

Preferably, in order to accelerate heat dissipation, an insulating heat sink may be further disposed on the circuit substrate 40, and an insulating heat dissipation portion is formed at a position corresponding to the upper surface of the reflective structure 100, so that when the LED chip 200 is soldered on the circuit substrate, the upper surface of the reflective structure 100 is in heat-conducting contact with the heat dissipation portion, and heat generated by the LED chip 200 can be rapidly dissipated and output through the heat-conducting path and the heat sink on the reflective structure 100. (not shown in the drawings)

Preferably, in another embodiment, a high heat conduction structure is further formed on the upper surface (the side far from the light emitting surface) of the reflective layer on the LED chip 200, and the high heat conduction structure is in heat conduction contact with the communication layer 13 and/or the first material layer 11 in the reflective layer, so as to communicate with the heat conduction path in the reflective layer and conduct out the heat in the heat conduction path.

The foregoing description of the preferred embodiments of the present invention is not intended to limit the scope of the claims, which follow, as defined in the claims.

Claims (11)

1. A reflective structure with high heat dissipation, comprising a plurality of material layers, wherein the material layers comprise a plurality of first material layers and a plurality of second material layers, one of the first material layers and the second material layers is a high refractive index material layer, the other is a low refractive index material layer, and a plurality of the first material layers and a plurality of the second material layers are alternately stacked to form a reflective unit, and the reflective structure is characterized in that: the reflecting unit comprises an upper surface, a lower surface opposite to the upper surface and a side surface connecting the upper surface and the lower surface, wherein the first material layer is made of a high heat conduction material, the side surface of the reflecting unit is wrapped by the same high heat conduction material as the first material layer to form a communication layer, and all the first material layers are communicated together by the communication layer to form a complete heat conduction path.

2. The reflective structure of claim 1, wherein: the upper surface of the reflecting unit is fully covered by the high heat conduction material which is the same as the material of the first material layer so as to form a communication material layer which is integrally communicated with the communication layer; or,

the uppermost material layer of the reflecting unit is a first material layer, so that the uppermost material layer of the reflecting unit is a communication material layer integrally communicated with the communication layer.

3. The reflective structure of claim 1, wherein: the communication layer comprises a first communication layer which is formed on the outer side surface of the reflecting unit and communicated with all the first material layers.

4. The reflective structure of claim 1, wherein: the upper surface of the reflecting layer structure is provided with a groove or a concave hole penetrating through the reflecting unit or extending to the lowest material layer of the reflecting unit, and the communicating layer comprises a second communicating layer which is formed on the side wall of the groove or the concave hole and is communicated with all the first material layers.

5. The reflective structure of claim 4, wherein: the communication layer also comprises a third communication layer formed at the bottom of the groove or the concave hole or forming the bottom of the groove or the concave hole, and the third communication layer is integrally connected with the second communication layer.

6. The reflective structure of claim 4, wherein: the cross-sectional area of the groove or the concave hole is gradually increased from bottom to top, so that the groove or the concave hole is gradually increased from bottom to top.

7. The reflective structure of claim 1, wherein: in the reflecting unit, the area of the material layer is gradually reduced from bottom to top, and the material layer on the upper layer is completely stacked on the material layer on the lower layer.

8. The reflective structure of claim 7, wherein: the outer side surfaces of the first material layer and the second material layer extend along the vertical direction to form a step structure, the communication layer comprises a first communication layer formed on the step structure, and the first communication layer is in a step shape.

9. The reflective structure of claim 1, wherein: the high thermal conductivity material is diamond.

10. The utility model provides a high radiating LED chip, includes the epitaxial layer, forms in the epitaxial layer is kept away from the reflection stratum of LED chip's light emitting area one side, its characterized in that: the reflective layer is a reflective structure as claimed in any one of claims 1 to 9, a lower surface of the reflective structure contacting the epitaxial layer and an upper surface being remote from the epitaxial layer.

11. An LED display module, its characterized in that: the LED chip is a high-heat-dissipation LED chip as claimed in claim 10, an electrode on one side of the LED chip far away from the light-emitting surface is welded with a bonding pad on the circuit substrate, and the upper surface and the outer side surface of the reflecting structure are exposed out of the surface of the circuit substrate so as to rapidly disperse and output heat generated by light emission of the LED chip.