CN117199103A - Light-emitting substrate, display device and preparation method of light-emitting substrate - Google Patents

Light-emitting substrate, display device and preparation method of light-emitting substrate Download PDF

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Publication number
CN117199103A
CN117199103A CN202311195883.1A CN202311195883A CN117199103A CN 117199103 A CN117199103 A CN 117199103A CN 202311195883 A CN202311195883 A CN 202311195883A CN 117199103 A CN117199103 A CN 117199103A
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China
Prior art keywords
light
layer
electrode
emitting
substrate
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CN202311195883.1A
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Chinese (zh)
Inventor
王锦谦
高志坤
秦斌
张方振
牛亚男
王玮
牛菁
孙双
邱喆
任锦宇
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN202311195883.1A priority Critical patent/CN117199103A/en
Publication of CN117199103A publication Critical patent/CN117199103A/en
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Abstract

The application provides a light-emitting substrate, a display device and a preparation method of the light-emitting substrate, and relates to the technical field of display. The light-emitting substrate comprises a basal layer, wherein the basal layer is provided with a plurality of first grooves and a plurality of second grooves, and each first groove is positioned between two second grooves; the light emitting assemblies are arranged on one side of the basal layer in an array mode; each light emitting assembly includes: the light-emitting structure comprises a first pin, a second pin and a light emergent area, wherein the first electrode is arranged in a first groove, the second electrode is arranged in a second groove, the height of the first electrode is larger than or equal to the depth of the first groove, the height of the second electrode is larger than or equal to the depth of the second groove, the first electrode is electrically connected with the first pin, the second electrode is electrically connected with the second pin, and the orthographic projection of the light emergent area on the substrate layer is positioned between the orthographic projection of the first electrode on the substrate layer and the orthographic projection of the second electrode on the substrate layer.

Description

Light-emitting substrate, display device and preparation method of light-emitting substrate
Technical Field
The present application relates to the field of display technologies, and in particular, to a light emitting substrate, a display device, and a method for manufacturing the light emitting substrate.
Background
The display device may include a backlight module and a liquid crystal display panel. The backlight source in the direct type backlight module can adopt a light-emitting substrate, a plurality of inorganic light-emitting diodes are arranged on the light-emitting substrate, and how to lighten and thin the display device is a research hot spot in the display field.
Disclosure of Invention
The application provides a light-emitting substrate, a display device and a preparation method of the light-emitting substrate, which are used for solving the problem that the light-emitting efficiency of the display device cannot be high under the condition that the display device is ultrathin in the prior art.
In a first aspect, the present application provides a light emitting substrate comprising:
the base layer is provided with a plurality of first grooves and a plurality of second grooves, and each first groove is positioned between two second grooves;
the light emitting assemblies are arranged on one side of the basal layer in an array mode;
each light emitting assembly includes: the light-emitting structure comprises a first pin, a second pin and a light emergent area, wherein the first electrode is arranged in a first groove, the second electrode is arranged in a second groove, the light-emitting structure comprises a first pin, a second pin and a light emergent area, the height of the first electrode is larger than or equal to the depth of the first groove, the height of the second electrode is larger than or equal to the depth of the second groove, the first electrode is electrically connected with the first pin, the second electrode is electrically connected with the second pin, and the light emergent area is in orthographic projection on the substrate layer, and is positioned between orthographic projection of the first electrode on the substrate layer and orthographic projection of the second electrode on the substrate layer.
In one possible embodiment, the light emitting substrate further includes: the dielectric film is positioned on one side of the basal layer far away from the light-emitting structure, and the dielectric film is an optical layer for reflecting the first light and transmitting the second light. The first light is light with the difference value of the color coordinates of the light emitted by the light emitting area within a preset range, and the second light is light with the difference value of the color coordinates of the light emitted by the light emitting area outside the preset range.
In one possible implementation manner, a plurality of concave parts are arranged at intervals on one side of the dielectric film far away from the light-emitting structure.
In one possible embodiment, the dielectric film has a thickness in a direction perpendicular to the base layer of greater than 1um and less than 2um.
In one possible embodiment, each recess has a semicircular cross-sectional shape parallel to the thickness direction of the base layer, and each recess has a diameter of greater than 5um and less than 50um, and each recess has a depth of greater than 1um and less than 2um.
In one possible embodiment, a plurality of concave portions are arranged at intervals on one side of the substrate layer away from the light-emitting structure.
In one possible embodiment, the thickness of the base layer is greater than 0.3um and less than 0.5um.
In one possible embodiment, each recess has a semicircular cross-sectional shape parallel to the thickness direction of the base layer, and each recess has a diameter of greater than 5um and less than 50um, and each recess has a depth of greater than 1um and less than 4.5um.
In one possible embodiment, the light emitting substrate further includes: the packaging layer covers one side, far away from the substrate layer, of the first groove, the second groove, the light ray definition layer and the color conversion layer, and the heights of the first electrode and the second electrode are higher than those of the area, covered by the light ray definition layer, of the packaging layer.
In one possible embodiment, the light emitting substrate further comprises a scattering layer, the scattering layer being located between the color conversion layer and the base layer.
In one possible embodiment, the color conversion layer is a quantum dot color conversion layer.
In a second aspect, the present application provides a display device comprising a display panel and a light-emitting substrate of the first aspect of the application for backlighting the display panel.
In a third aspect, the present application provides a method for manufacturing a light-emitting substrate, and an embodiment of the present application further provides a light-emitting device including:
forming a plurality of first grooves and a plurality of second grooves in the substrate layer, wherein each first groove is positioned between two second grooves;
forming a plurality of light emitting assemblies distributed in an array on one side of the base layer, each light emitting assembly comprising: the light-emitting structure comprises a first pin, a second pin and a light emergent area, wherein the first electrode is arranged in a first groove, the second electrode is arranged in a second groove, the light-emitting structure comprises a first pin, a second pin and a light emergent area, the height of the first electrode is larger than or equal to the depth of the first groove, the height of the second electrode is larger than or equal to the depth of the second groove, the first electrode is electrically connected with the first pin, the second electrode is electrically connected with the second pin, and the light emergent area is in orthographic projection on the substrate layer, and is positioned between orthographic projection of the first electrode on the substrate layer and orthographic projection of the second electrode on the substrate layer.
In one possible embodiment, the method provided by the application further comprises:
forming a plurality of concave parts which are arranged at intervals on one side of the basal layer far away from the light-emitting structure;
and/or forming a dielectric film on one side of the substrate layer far away from the light-emitting structure, wherein the dielectric film is an optical layer for reflecting the first light and transmitting the second light;
the first light is light with the difference value of the color coordinates of the light emitted by the light emitting area within a preset range, and the second light is light with the difference value of the color coordinates of the light emitted by the light emitting area outside the preset range.
The application provides a light-emitting substrate, a display device and a preparation method of the light-emitting substrate. The color conversion layer is arranged in the light emergent opening of the light defining layer positioned on the basal layer, and the light emergent opening is opposite to the light emergent area of the light-emitting structure. Further, the distance between the light emitting structure and the color conversion layer is reduced. Meanwhile, the thickness of the light-emitting substrate can be reduced, and the display device comprising the light-emitting substrate is ultra-thin.
In addition, when the color conversion layer converts a part of light emitted by the light emergent region into color, the color conversion layer outputs the color converted light from the basal layer, and the other part of light is reflected back to the light emitting structure. Since the distance between the light emitting structure and the color conversion layer is shortened, the attenuation of the light intensity reflected back to the light emitting structure is also small. Therefore, the reflected light can be reflected to the color conversion layer again and output after the color conversion layer converts the color, and the light-emitting efficiency of the display device comprising the light-emitting substrate is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it will be obvious that the drawings in the following description are some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
Fig. 1 is a cross-sectional view of a light-emitting substrate according to an embodiment of the present application;
fig. 2 is a cross-sectional view of a specific structure of a light emitting structure according to an embodiment of the present application;
FIG. 3 is a second cross-sectional view of a light-emitting substrate according to an embodiment of the present application;
FIG. 4 is a parameter enumeration diagram of a dielectric film according to an embodiment of the present application;
FIG. 5 is a schematic diagram showing the relationship between the reflectivity and the wavelength of a dielectric film according to an embodiment of the present application;
FIG. 6 is a third cross-sectional view of a light-emitting substrate according to an embodiment of the present application;
FIG. 7 is a cross-sectional view of a light-emitting substrate according to an embodiment of the present application;
fig. 8 is a flowchart of a method for manufacturing a light emitting substrate according to an embodiment of the present application.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned.
The embodiment of the disclosure provides a light-emitting substrate with an ultrathin thickness, and specifically, the light-emitting substrate comprises a light-emitting substrate provided with a plurality of first grooves and a plurality of second grooves, wherein a first electrode of each light-emitting component is arranged in one first groove, and a second electrode of the light-emitting component is arranged in the second groove. In this way, the distance between the light emitting structure and the base layer is reduced. Further, the distance between the light emitting structure and the color conversion layer is reduced. Therefore, the thickness of the light emitting substrate can be small, and thus, the display device including the light emitting substrate is ensured to be ultra-thin.
In addition, when the color conversion layer converts a part of light emitted by the light emitting area into color, the color conversion layer outputs the color from the substrate layer, and reflects another part of light emitted by the light emitting area back to the light emitting structure. Since the distance between the light emitting structure and the color conversion layer is shortened, the attenuation of the light intensity reflected back to the light emitting structure is also small. Therefore, the reflected light can be reflected to the color conversion layer again and output after the color conversion layer converts the color, and the light-emitting efficiency of the display device comprising the light-emitting substrate is improved. Therefore, the display device can be made ultra-thin, and the light-emitting efficiency of the display device is high.
The following describes the technical scheme of the present application and how the technical scheme of the present application solves the above technical problems in detail with specific embodiments. The following embodiments may be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments. Embodiments of the present application will be described below with reference to the accompanying drawings.
Referring to fig. 1, an embodiment of the present application provides a light emitting substrate, which includes a base layer 101, a plurality of light emitting elements, a light defining layer 114, and a color conversion layer 106. Wherein,
the base layer 101 may comprise a polyethylene terephthalate (Polyethylene Terephthalate, PET) substrate, a polyethylene naphthalate (Polyethylene naphthalate two formic acid glycol ester, PEN) substrate, or a colorless polyimide (Colorless Polyimide, CPI), or the like. It will be appreciated that the substrate layer 101 has a light transmittance of greater than 90% for light extraction.
The base layer 101 may have a single-layer structure or a multi-layer structure. For example, the base layer 101 may include a glass substrate, or the base layer 101 may include at least one flexible substrate and at least one buffer layer, which are alternately stacked, which is not limited in the embodiment of the present application.
The base layer 101 is provided with a plurality of first grooves 102 and a plurality of second grooves 103, and each first groove 102 is located between two second grooves 103. That is, the plurality of first grooves 102 are disposed at intervals from the plurality of second grooves 103, and the first grooves 102 and the second grooves 103 are disposed adjacently.
The light emitting components are arranged on one side of the substrate layer 101 in an array. Specifically, each light emitting assembly includes: the light emitting structure 107, the first electrode 104 disposed in one first groove 102, and the second electrode 105 disposed in one second groove 103, and the solder layer 115. It is understood that the light emitting structure 107 in the embodiment of the present application may be a sub-millimeter light emitting diode (Mini Light Emitting Diode, abbreviated as Mini LED) chip, or may be a Micro light emitting diode (Micro Light Emitting Diode, abbreviated as Micro LED) chip. Wherein the first electrode 104 may be an anode and the second electrode 105 may be a cathode.
For example, the thickness of the first electrode 104 and the second electrode 105 in the direction perpendicular to the base layer 101 is greater than 3um and less than 5um, such as the thickness of the first electrode 104 and the second electrode 105 in the direction perpendicular to the base layer 101 may be 3.5um, 4um, or 4.5um; the material of the first electrode 104 and the second electrode 105 may be copper, aluminum, or the like, and is not limited herein. The depth of the first groove 102 and the second groove 103 is greater than 0.2um and less than 0.4um, e.g., the depth of the first groove 102 and the second groove 103 may be 0.25um, 0.3um, or 0.35um.
As shown in fig. 2, the light emitting structure 107 includes: the first pin 201, the second pin 202, the insulating layer 203, the hole injection layer 206, the light emitting layer 207, and the electron transport layer 208. In some examples, the light emitting layer 207 may be, but is not limited to, a multiple quantum well (Multiple Quantum Well, MQW) material layer, the electron transport layer 208 may be, but is not limited to, an N-type gallium nitride layer (N-GaN), and the hole injection layer 206 may be, but is not limited to, a P-type gallium nitride layer (P-GaN).
Wherein the insulating layer 203 includes a first insulating region and a second insulating region, and the thickness of the first insulating region is higher than the thickness of the second insulating region. The second insulating region, the hole injection layer 206, the light emitting layer 207, and the electron transport layer 208 are sequentially stacked, and the length of the hole injection layer 206 is greater than the lengths of the electron transport layer 208 and the light emitting layer 207, and the hole injection layer 206 is disposed on a side of the first insulating region remote from the base layer 101. The first insulating region is provided with a first via 204, the second insulating region is provided with a second via 205, the first pin 201 is disposed in the first via 204, and the second pin 202 is disposed in the second via 205.
The first electrode 104 is soldered to the first lead 201 by being located on the soldering layer 115, and the second electrode 105 is soldered to the second lead 202 by being located on the soldering layer 115. The first electrode 104 applies a voltage to the electron transport layer 208 through the bonding layer 115 and the first lead 201, and the second electrode 105 applies a voltage to the hole injection layer 206 through the bonding layer 115 and the second lead 202, so as to excite the light emitting layer 207 to emit light. At this time, the first electrode 104 is an anode, and the second electrode 105 is a cathode.
In addition, the light emitting structure 107 further includes a light emitting exit region 108, and the light emitting exit region 108 includes an electron transport layer 208, a light emitting layer 207, and a hole injection layer 206, which are orthographically positioned between the first insulating region and the second lead 202. It should be noted that the height of the first electrode 104 is greater than or equal to the depth of the first groove 102, and the height of the second electrode 105 is greater than or equal to the depth of the second groove 103, so that the first electrode 104 contacts the first lead 201 of the light emitting structure 107, and the second electrode 105 contacts the second lead 202 of the light emitting structure 107. In this way, the external control module electrically connected to the first electrode 104 and the second electrode 105 can control the light emitting region 108 of the light emitting structure 107 to emit light.
Wherein the orthographic projection of the light exit region 108 on the substrate layer 101 is located between the orthographic projection of the first electrode 104 on the substrate layer 101 and the orthographic projection of the second electrode 105 on the substrate layer 101. In addition, the light-emitting substrate further includes: the light defining layer 114 is disposed on one side of the substrate layer 101, and the light defining layer 114 is provided with a light emitting opening 115, and the light emitting opening 115 is opposite to the light emitting region 108. The color conversion layer 106 is disposed in the light emitting opening 115. Since the light-emitting opening 115 is opposite to the light-emitting region 108, the color conversion layer 106 is opposite to the light-emitting opening 115. Illustratively, the color conversion layer 106 may be, but is not limited to, a quantum dot color conversion layer 106. When the light emitting region 108 of the light emitting device emits light, the color conversion layer 106 can perform color conversion on a portion of the light emitted from the light emitting region 108, so that the light with the required color coordinates (such as blue light converted into red light) is emitted from the substrate layer 101.
In the light emitting substrate provided in the embodiment of the present application, since the first electrode 104 is disposed in one first groove 102 of the base layer 101 and the second electrode 105 is disposed in one second groove 103 of the base layer 101, the first electrode 104 is electrically connected to the first pin 201 of the light emitting structure 107, and the second electrode 105 is electrically connected to the second pin 202 of the light emitting structure 107, so that the distance between the light emitting structure 107 and the base layer 101 is reduced. The color conversion layer 106 is disposed in the light emitting opening 115 of the light defining layer 114 of the substrate layer 101, and the light emitting opening 115 is opposite to the light emitting region 108 of the light emitting structure 107. Further, the distance between the light emitting structure 107 and the color conversion layer 106 is reduced. Therefore, the thickness of the light emitting substrate can be small, and thus, the display device including the light emitting substrate is ensured to be ultra-thin.
In addition, when the color conversion layer 106 converts a portion of the light emitted from the light emitting region 108 into color, the color is output from the substrate layer 101, and another portion of the light is reflected back to the light emitting structure 107. Since the distance between the light emitting structure 107 and the color conversion layer 106 is shortened, the attenuation of the light intensity reflected back to the light emitting structure 107 is also small. Thus, the light reflected back can be reflected to the color conversion layer 106 again, and output after color conversion by the color conversion layer 106, and the light-emitting efficiency of the display device including the light-emitting substrate can be improved.
As further shown in fig. 1, the light emitting substrate further includes an encapsulation layer 109, where the encapsulation layer 109 covers the first recess 102, the second recess 103, the light defining layer 114, and a side of the color conversion layer 106 away from the base layer 101. The encapsulation layer 109 may be used to insulate air, and moisture from entering the light emitting assembly, and to prevent the light emitting assembly from being corroded. In addition, the encapsulation layer 109 may also function as a buffer between the first electrode 104 and the first groove 102 of the base layer 101; the encapsulation layer 109 may also function as a buffer between the second electrode 105 and the second recess 103 of the base layer 101. In addition, the heights of the first electrode 104 and the second electrode 105 are higher than the height of the region covered by the light defining layer 114 with the encapsulation layer 109, so that a gap exists between the encapsulation layer 109 and the light emitting structure 107. Illustratively, the thickness of the encapsulation layer 109 may be, but is not limited to, 250um, 300um, 350um, or the like.
It should be noted that the encapsulation layer 109 may be made of an inorganic material such as a nitride, an oxide, an oxynitride, a nitrate, a carbide, or any combination thereof, and the preparation process may be a chemical vapor deposition (Chemical Vapor Deposition, CVD) process, such as a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) process. For example, the encapsulation layer 109 may be made of acrylic, hexamethyldisiloxane, polyacrylate, polycarbonate, polystyrene, and the like, and the preparation process may be an Ink Jet Printing (IJP) process. Wherein the light transmittance of the encapsulation layer 109 is greater than 90%. It will be appreciated that the encapsulation layer 109 is used to encapsulate the color conversion layer 106 to avoid outside moisture from attacking the color conversion layer 106.
As also shown in fig. 1, the light emitting substrate may further include a scattering layer 110, the scattering layer 110 being located between the color conversion layer 106 and the base layer 101. The scattering layer 110 may be used to scatter the light converted by the color conversion layer 106, so that the light-homogenizing effect of the light-emitting substrate may be enhanced. In addition, the light emitting substrate may further include: bai Youceng 111 the white oil layer 111 covers the side of the light emitting structure 107 away from the base layer 101, and is used for reflecting light emitted by the light emitting structure 107.
Further, as shown in fig. 3, the light emitting substrate may further include: the dielectric film 112, the dielectric film 112 is located on a side of the base layer 101 far from the light emitting structure 107, and the dielectric film 112 is an optical layer that reflects the first light and transmits the second light. The first light is a light with a color coordinate within a predetermined range (e.g., blue light is emitted from the light emitting region 108, and the reflected first light is also blue light), and the second light is a light with a color coordinate outside the predetermined range (e.g., blue light is emitted from the light emitting region 108, and the transmitted second light is green light or red light). For example, when the light emitted from the light emitting region 108 is blue light and the color conversion layer 106 is used to convert the blue light into red light, the dielectric film 112 is used to reflect the blue light (i.e., the first light) and transmit the red light (i.e., the second light), and the blue light is reflected by the dielectric film 112 to the light emitting structure 107 and reflected again to the color conversion layer 106 by the light emitting structure 107 to be converted into red light. Thus, the utilization rate of the light emitted from the light emitting structure 107 can be improved.
Illustratively, the material and thickness of dielectric film 112 may be as shown in FIG. 4; the relationship between the reflectance of the dielectric film 112 and the wavelength of light incident on the dielectric film 112 may be as shown in fig. 5.
Further, as shown in fig. 6, a side of the dielectric film 112 away from the light emitting structure 107 is provided with a plurality of concave portions 113 at intervals. Illustratively, the shape of the recess 113 may be circular arc, rectangular, etc., and is not limited herein. Further, the plurality of concave portions 113 can collect light outputted from the base layer 101, and thus, the intensity of the outputted light can be increased.
Alternatively, the plurality of recesses 113 are formed by processing a side of the base layer 101 remote from the light emitting structure 107 using a multiple laser beam alignment (Multiple Laser Beam Alignment, MLBA) process. The multiple laser beams in the MLA process may simultaneously etch the dielectric film 112, thereby implementing thinning of the dielectric film 112. Such simultaneous etching of multiple laser beams can improve processing efficiency. In addition, by controlling the energy, focusing and alignment of the laser beam, the depth of the etched recess 113 can be precisely controlled on the dielectric film 112, which is convenient and quick. In this way, the thickness of the dielectric film 112 can be reduced, which results in a thinner light emitting substrate. For example, the MLA process may result in a thickness of the dielectric film 112 in a direction perpendicular to the substrate layer 101 of greater than 1um and less than 2um.
Further, the cross-sectional shape of the concave portion 113 of the dielectric film 112 is semicircular, the diameter of the cross-section of each concave portion 113 is greater than 5um and less than 50um, and the diameter of the cross-section of the concave portion 113 may be 6um, 15um, 35um, or the like, which is not limited herein. The depth of each recess 113 is greater than 1um and less than 2um. For example, the depth of the recess 113 may be 1.2um, 1.5um, 1.8um, or the like, which is not limited herein. In this way, the concentration degree of the light outputted from the base layer 101 can be made high.
In other embodiments, as shown in fig. 7, a plurality of concave portions 113 are disposed at intervals on a side of the base layer 101 away from the light emitting structure 107. Illustratively, the shape of the recess 113 may be circular arc, rectangular, etc., and is not limited herein.
Further, the plurality of concave portions 113 can collect light outputted from the base layer 101, and thus, the intensity of the outputted light can be increased. Alternatively, the plurality of recesses 113 are formed by processing a side of the base layer 101 remote from the light emitting structure 107 using a multiple laser beam alignment (Multiple Laser Beam Alignment, MLBA) process. In this way, multiple laser beams in the MLA process may simultaneously etch the substrate layer 101, thereby achieving thinning of the substrate layer 101. Such simultaneous etching of multiple laser beams can improve processing efficiency. In addition, by controlling the energy, focusing and alignment of the laser beam, the etching depth can be precisely controlled on the base layer 101, which is convenient and quick. In this way, the thickness of the base layer 101 can be reduced, which results in a thinner light emitting substrate. For example, the MLA process may result in a thickness of the substrate layer 101 in a direction perpendicular to the substrate layer 101 that is greater than 0.3um and less than 0.5um, such as, but not limited to, the substrate layer 101 may be 0.35um, 0.4um, or 0.45 um.
Further, the cross-sectional shape of the concave portion 113 of the base layer 101 is semicircular, the diameter of the cross-section of each concave portion 113 is greater than 5um and less than 50um, and the diameter of the cross-section of the concave portion 113 may be 6um, 15um, 35um, or the like, which is not limited herein. The depth of each recess 113 is greater than 1um and less than 2um. For example, the depth of the recess 113 may be 1.2um, 1.5um, 1.8um, or the like, which is not limited herein. In this way, the concentration degree of the light outputted from the base layer 101 can be made high.
In addition, the embodiment of the application also provides a display device, which comprises a display panel and the light-emitting substrate provided by any embodiment, wherein the light-emitting substrate is used for backlighting the display panel. The display device may be an advertisement screen, a vehicle-mounted display screen, or the like, which is not limited herein.
Referring to fig. 8, the embodiment of the present application further provides a method for manufacturing a light emitting substrate, and it should be noted that, for brevity, reference is made to the corresponding contents of the above embodiments for the description of the embodiments of the present application, where the basic principle and the technical effects of the display device provided by the embodiment of the present application are the same as those of the above embodiments. The method provided by the embodiment of the application further comprises the following steps:
s701: a plurality of first grooves 102 and a plurality of second grooves 103 are formed in the base layer 101, and each first groove 102 is located between two second grooves 103.
S702: a plurality of light emitting elements distributed in an array are formed at one side of the base layer 101.
Wherein each light emitting assembly comprises: the light emitting structure 107, the first electrode 104 disposed in one of the first grooves 102, and the second electrode 105 disposed in one of the second grooves 103. The light emitting structure 107 includes a first lead 201, a second lead 202, and a light emitting region 108, the height of the first electrode 104 is greater than or equal to the depth of the first groove 102, and the height of the second electrode 105 is greater than or equal to the depth of the second groove 103.
The first electrode 104 is electrically connected to the first lead 201, the second electrode 105 is electrically connected to the second lead 202, and the orthographic projection of the light emitting region 108 on the substrate layer 101 is located between the orthographic projection of the first electrode 104 on the substrate layer 101 and the orthographic projection of the second electrode 105 on the substrate layer 101.
S703: a light defining layer 114 is formed on one side of the substrate layer 101, and the light defining layer 114 is provided with a light emitting opening 115, and the light emitting opening 115 is opposite to the light emitting region 108.
S704: the color conversion layer 106 is formed in the light-emitting opening 115.
The method provided by the embodiment of the application can further comprise the following steps: a plurality of concave portions 113 disposed at intervals are formed on a side of the base layer 101 remote from the light emitting structure 107; and/or, a dielectric film 112 is formed on a side of the base layer 101 away from the light emitting structure 107, the dielectric film 112 being an optical layer that reflects the first light and transmits the second light.
The first light is a light with a difference between the color coordinates of the light emitted from the light emitting area 108 within a preset range, and the second light is a light with a difference between the color coordinates of the light emitted from the light emitting area 108 outside the preset range.
In the above description, technical details such as patterning of each layer are not described in detail. Those skilled in the art will appreciate that layers, regions, etc. of the desired shape may be formed by a variety of techniques. In addition, to form the same structure, those skilled in the art can also devise methods that are not exactly the same as those described above. In addition, although the embodiments are described above separately, this does not mean that the measures in the embodiments cannot be used advantageously in combination.
While preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (14)

1. A light-emitting substrate, comprising:
the base layer is provided with a plurality of first grooves and a plurality of second grooves, and each first groove is positioned between two second grooves;
the light emitting assemblies are arranged on one side of the substrate layer in an array mode;
each of the light emitting assemblies includes: the light emitting structure comprises a first pin, a second pin and a light emergent area, wherein the first pin is arranged in one first groove, the second pin is arranged in one second groove, the height of the first electrode is larger than or equal to the depth of the first groove, the height of the second electrode is larger than or equal to the depth of the second groove, the first electrode is electrically connected with the first pin, the second electrode is electrically connected with the second pin, and the orthographic projection of the light emergent area on the substrate layer is positioned between the orthographic projection of the first electrode on the substrate layer and the orthographic projection of the second electrode on the substrate layer;
the light emitting substrate further includes:
the light ray defining layer is arranged on one side of the basal layer, the light ray defining layer is provided with a light emitting opening, and the light emitting opening is opposite to the light ray emergent area;
the color conversion layer is arranged in the light emergent opening.
2. The light-emitting substrate according to claim 1, further comprising: the dielectric film is positioned on one side of the basal layer far away from the light-emitting structure, and is an optical layer for reflecting first light rays and transmitting second light rays;
the first light is light with a color coordinate within a preset range, and the second light is light with a color coordinate outside the preset range.
3. The light-emitting substrate according to claim 2, wherein a side of the dielectric film away from the light-emitting structure is provided with a plurality of concave portions at intervals.
4. A light-emitting substrate according to claim 3, wherein the dielectric film has a thickness in a direction perpendicular to the base layer of more than 1um and less than 2um.
5. A light-emitting substrate according to claim 3, wherein each of the concave portions has a semicircular cross-sectional shape in a direction parallel to a thickness direction of the base layer, a diameter of a cross-section of each of the concave portions in the direction parallel to the thickness direction of the base layer is greater than 5um and less than 50um, and a depth of each of the concave portions is greater than 1um and less than 2um.
6. The light-emitting substrate according to claim 1, wherein a side of the base layer away from the light-emitting structure is provided with a plurality of concave portions at intervals.
7. The light-emitting substrate according to claim 6, wherein a thickness of the base layer is greater than 0.3um and less than 0.5um.
8. The light-emitting substrate according to claim 6, wherein each of the concave portions has a semicircular cross-sectional shape in a direction parallel to a thickness direction of the base layer, a diameter of a cross-section of each of the concave portions in the direction parallel to the thickness direction of the base layer is greater than 5um and less than 50um, and a depth of each of the concave portions is greater than 1um and less than 4.5um.
9. The light-emitting substrate according to claim 1, further comprising: the packaging layer covers the first groove, the second groove, the light ray definition layer and one side, far away from the substrate layer, of the color conversion layer, and the heights of the first electrode and the second electrode are higher than those of the area, covered by the packaging layer, of the light ray definition layer.
10. The light-emitting substrate according to claim 1, further comprising a scattering layer between the color conversion layer and the base layer.
11. The light-emitting substrate according to claim 1, wherein the color conversion layer is a quantum dot color conversion layer.
12. A display device comprising a display panel and a light-emitting substrate according to any one of claims 1 to 11 for backlighting the display panel.
13. A method of manufacturing a light emitting substrate, the method comprising:
forming a plurality of first grooves and a plurality of second grooves in the substrate layer, wherein each first groove is positioned between two second grooves;
forming a plurality of light emitting assemblies distributed in an array on one side of a substrate layer, each of the light emitting assemblies comprising: the light emitting structure comprises a first pin, a second pin and a light emergent area, wherein the first pin is arranged in one first groove, the second pin is arranged in one second groove, the height of the first electrode is larger than or equal to the depth of the first groove, the height of the second electrode is larger than or equal to the depth of the second groove, the first electrode is electrically connected with the first pin, the second electrode is electrically connected with the second pin, and the orthographic projection of the light emergent area on the substrate layer is positioned between the orthographic projection of the first electrode on the substrate layer and the orthographic projection of the second electrode on the substrate layer;
forming a light ray defining layer on one side of the substrate layer, wherein the light ray defining layer is provided with a light emitting opening, and the light emitting opening is opposite to the light ray emitting area;
and forming a color conversion layer in the light emergent opening.
14. The method of claim 13, wherein the method further comprises:
forming a plurality of concave parts which are arranged at intervals on one side of the basal layer far away from the light-emitting structure;
and/or forming a dielectric film on one side of the substrate layer far away from the light emitting structure, wherein the dielectric film is an optical layer for reflecting the first light and transmitting the second light;
the first light is light with a color coordinate within a preset range, and the second light is light with a color coordinate outside the preset range.
CN202311195883.1A 2023-09-15 2023-09-15 Light-emitting substrate, display device and preparation method of light-emitting substrate Pending CN117199103A (en)

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CN202311195883.1A CN117199103A (en) 2023-09-15 2023-09-15 Light-emitting substrate, display device and preparation method of light-emitting substrate

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