CN117193458A - Hybrid bandgap reference and integrated circuit with current drive capability - Google Patents
Hybrid bandgap reference and integrated circuit with current drive capability Download PDFInfo
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Abstract
The invention provides a hybrid band gap reference and an integrated circuit with current driving capability, and relates to the field of integrated circuits. The current-mode band gap reference core is connected with the voltage-mode band gap reference core through a second resistor trimming network, and generates first-order zero-temperature drift current which is independent of temperature; the voltage mode band gap reference core compensates the nonlinearity of the band gap reference voltage by adjusting the resistances of the first resistance trimming network and the second resistance trimming network based on the first-order zero-temperature drift current, and generates the current driving capability of milliamp level or above through the driving module. The invention creatively proposes that V is based on BE The high-order term-compensated current-voltage mode mixed band gap reference achieves the purpose of low temperature drift design and has good current driving capability, and can be applied to high-precision AD and other application scenes requiring low temperature drift and current driving capability, and meanwhile, the trimming cost is reduced.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to a hybrid bandgap reference with current driving capability and an integrated circuit.
Background
The traditional band gap reference only has first-order curvature compensation and has larger temperature drift. In order to reduce temperature drift, various higher order compensation techniques are applied to bandgap references, however, conventional bandgap reference outputs cannot be directly connected to resistive loads due to circuit structure. Because the load will split a portion of the current and thus affect the bandgap reference circuit body function, a stable reference voltage cannot be generated.
Therefore, a unity gain buffer op-amp or LDO (LowDropout Regulator, low dropout linear regulator) is usually connected to the output end of the bandgap reference source, so that the bandgap reference source can be applied to an application scenario such as ADC where bandgap reference is required and a certain current driving capability is provided.
However, the output buffer op-amp or LDO introduces a new temperature drift, so that a resistor trimming network (i.e., a resistor trimming network is added in addition to the resistor trimming network included in the conventional bandgap reference structure) needs to be additionally added at the LDO or unity gain buffer op-amp, which results in a significant increase in trimming cost. The resistance trimming network is not additionally added, a new temperature drift is introduced into the LDO or the unit gain buffer operational amplifier, the unit gain buffer operational amplifier or the LDO is not used, and the band gap reference source cannot be applied to application scenes such as an ADC (analog to digital converter) which need band gap reference and have certain current driving capability.
Therefore, it is needed to provide a bandgap reference that has current driving capability without adding additional resistor trimming network.
Disclosure of Invention
In view of the above problems, the present invention has been made to provide a hybrid bandgap reference and integrated circuit having current drive capability that solve or partially solve the above problems.
A first aspect of an embodiment of the present invention provides a hybrid bandgap reference having current driving capability, the hybrid bandgap reference including: a current mode band gap reference core, a voltage mode band gap reference core, and a resistance trimming network;
the voltage-mode bandgap reference core includes: a drive module, the drive module comprising: a first resistor trimming network;
the current-mode band gap reference core is connected with the voltage-mode band gap reference core through a second resistor trimming network, the current-mode band gap reference core generates first-order zero-temperature drift current, and the first-order zero-temperature drift current is temperature-independent current;
the voltage-mode band gap reference core compensates band gap reference voltage nonlinearity by adjusting the resistance of the first resistance trimming network and the resistance of the second resistance trimming network based on the first-order zero-temperature drift current, and generates current driving capability of milliamp level or more through the driving module.
Optionally, the driving module further includes: the first resistor, the second resistor, the amplifier and the driving unit; the voltage-mode bandgap reference core further comprises: the starting circuit, the third resistor, the first triode and the second triode;
the starting circuit is connected between the negative end and the power end of the amplifier in a bridging way;
one end of the driving unit is connected with the power supply end, and the other two ends of the driving unit are respectively connected with the input end of the first resistor trimming network and the output end of the amplifier;
the output end of the first resistor trimming network is respectively connected with the first end of the first resistor and the first end of the second resistor;
the second end of the first resistor is respectively connected with the first end of the third resistor and the positive end of the amplifier;
the second end of the second resistor is respectively connected with the negative end of the amplifier and the emitter of the first triode;
the second end of the third resistor is connected with the emitter of the second triode;
the base electrode of the first triode is connected with the collector electrode of the first triode and grounded;
and the base electrode of the second triode is connected with the collector electrode of the second triode and grounded.
Optionally, the driving unit includes: driving the MOS tube;
the first end of the driving MOS tube is connected with the power end, the second end of the driving MOS tube is connected with the output end of the amplifier, the third end of the driving MOS tube is connected with the input end of the first resistor trimming network, and the third end of the driving MOS tube outputs band gap reference voltage.
Optionally, the driving unit further includes: miller compensation capacitance;
one end of the miller compensation capacitor is connected with the second end of the driving MOS tube;
and the other end of the miller compensation capacitor is connected with the third end of the driving MOS tube.
Optionally, the second resistor trimming network includes: the first sub-resistor trimming network and the second sub-resistor trimming network;
the first end of the first sub-resistor trimming network receives the first-order zero-temperature drift current, and the second end of the first sub-resistor trimming network is connected with the negative end of the amplifier;
and a first end of the second sub-resistor trimming network receives the first-order zero-temperature drift current, and a second end of the second sub-resistor trimming network is connected with the positive end of the amplifier.
Optionally, the current-mode bandgap reference core comprises: a third triode;
the emitter of the third triode receives the first-order zero-temperature drift current, and the base is connected with the collector of the third triode and grounded;
the area ratio of the emitting areas of the first triode, the second triode and the third triode is 1: n:1.
optionally, the resistance of the first resistor is equal to the resistance of the second resistor and is different from the resistance of the third resistor.
Optionally, when the load is off, the output current of the third end of the driving MOS transistor only flows through the first resistor trimming network;
when load current exists, the voltage on the second end of the driving MOS tube is pulled down, and the output current of the third end of the driving MOS tube is increased, so that current driving capability of milliamp level or more is generated, and additional current is provided for the load.
Optionally, a main pole exists at the second end of the driving MOS transistor, a secondary main pole exists at the third end of the driving MOS transistor, and the miller compensation capacitor is used for separating the main pole and the secondary main pole.
A second aspect of an embodiment of the present invention provides an integrated circuit comprising a hybrid bandgap reference with current drive capability as described in any of the first aspects above.
The invention provides a mixed band gap reference with current driving capability, which comprises the following components: a current mode band gap reference core, a voltage mode band gap reference core, and a resistance trimming network; the voltage bandgap reference core includes: the drive module, the drive module includes: the first resistor trimming network.
The current-mode band gap reference core is connected with the voltage-mode band gap reference core through a second resistor trimming network, the current-mode band gap reference core generates first-order zero-temperature drift current, and the first-order zero-temperature drift current is temperature-independent current.
The voltage-mode band gap reference core is based on first-order zero-temperature drift current, compensates band gap reference voltage nonlinearity by adjusting the resistance of the first resistance trimming network and the resistance of the second resistance trimming network, and generates current driving capability of milliamp level or more through the driving module.
The invention provides a mixed band gap reference with current driving capability, which is different from the structure of the prior traditional buffer operation amplifier or LDO connected with unit gain and an additional resistor trimming network, and creatively proposes a band gap reference based on V BE The high-order term compensated current-voltage mode mixed band-gap reference utilizes a current model band-gap reference to provide a first-order zero-temperature drift current as the bias of a triode, and utilizes a resistance trimming network contained in the band-gap reference to combine the current model band-gap reference and the voltage model band-gap reference.
The nonlinearity of the band gap reference voltage is compensated by adjusting the resistance of the resistance trimming network, and meanwhile, the current driving capability of milliamp level or more is generated by the driving module. Therefore, the invention achieves the design purpose of low temperature drift and has better current driving capability, can be applied to high-precision AD and other application scenes needing low temperature drift and current driving capability, simultaneously avoids a resistor trimming network which is additionally added when a later stage is connected with LDO or a unit gain buffer operational amplifier, reduces trimming cost, and has higher practicability.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a conventional reference voltage output via an LDO;
fig. 2 is a schematic diagram of a conventional reference voltage output via RVB (reference voltage buffer);
FIG. 3 is a schematic diagram of a hybrid bandgap reference with current drive capability according to an embodiment of the invention;
fig. 4 is a circuit schematic of a simplified model corresponding to fig. 3 in an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The inventor finds that the traditional band-gap reference voltage source circuit is used for outputting a reference voltage which is hardly influenced by temperature change, and the basic principle of the design is that the voltage with positive temperature coefficient and the voltage with negative temperature coefficient are overlapped, the voltage value of the positive temperature coefficient is in an ascending trend along with the ascending of temperature, the voltage with the negative temperature coefficient is in a descending trend along with the descending of temperature, so that the temperature coefficients of the voltage and the voltage are offset, and finally the overlapped voltage is the reference voltage which is basically irrelevant to the temperature.
The inventors have further studied and found that the reference voltage circuit can generate a voltage with high accuracy and high anti-interference performance even when parameters such as an input voltage and an ambient temperature are changed, but the reference voltage circuit does not have driving capability for a load current with a large variation range. The load driven by the reference voltage circuit is typically a small current, often of a magnitude below the milliamp level.
In order to solve the above problems, the inventor finds that a unit gain buffer operational amplifier or LDO is connected to the output end of the bandgap reference source. LDO belongs to the class of voltage stabilizer, and its driven load current can reach several amperes, and the consumption is minimum, can effectively alleviate the heat dissipation burden of chip, and the response speed of LDO to non-violent load current abrupt change is fast simultaneously, so usually connect LDO at reference source output to make the reference source can be applied to the application scenario that needs current drive ability.
Referring to the schematic structure of the reference voltage output by the LDO shown in FIG. 1, the bandgap reference module generates a reference voltage (i.e., reference voltage V) REF ) The feedback network detects the output voltage and feeds it back to the input of the error amplifier, which compares the feedback voltage with the reference voltage and generates an error signal, and the regulator MP regulates its current according to the error signal, so that the LDO maintains the output voltage within an acceptable range around the target value, and the output voltage does not change to some extent with changes in environmental conditions such as noise, temperature, load current, and supply voltage.
However, the LDO introduces a new temperature drift, so that a resistor trimming network (the resistor trimming network is not shown in fig. 1 and 2 for simplicity of illustration) needs to be additionally added at the LDO, otherwise, the reference voltage will change with the change of environmental conditions such as noise, temperature, load current and supply voltage.
The inventors have found another common practice to follow the bandgap reference with a reference voltage buffer (i.e. a unity gain buffer op-amp) to provide drive. As shown in fig. 2, the reference voltage is output through RVB (reference voltage buffer), the bandgap reference is used to generate the reference voltage, a MN1 tube is used to form a duplication branch, and the working state of the branch where the MN tube is located is duplicated in a matching manner, so as to obtain the required reference voltage.
Therefore, the branch where the MN1 generating the reference voltage is located is separated from the driving stage, the voltage fluctuation of the output node of the reference voltage does not influence the working state of the feedback loop, and the establishment performance is improved. The driving capability of RVB is mainly embodied in large signal driving capability and small signal driving capability, the large signal driving capability is mainly provided by the current of the output stage, and the small signal driving capability is dependent on RC characteristics of the output pole.
In consideration of process errors, a resistor trimming network is generally added in the band gap reference to reduce V REF The offset voltage and the resistance of the operational amplifier in LDO and RVB change with the temperature (i.e. new temperature drift is introduced) so as to influence V OUT (i.e. the output reference voltage V REF ) Therefore, if V with driving capability and low temperature drift is desired OUT Additional resistor trimming network pairs V need to be added in LDO and RVB circuits OUT The temperature drift of the chip is repaired and regulated, the area is increased, and the chip testing process is more complicated.
The new temperature drift is introduced without additionally adding a resistance trimming network, and the unit RVB or LDO is not used, so that the band gap reference source cannot be applied to application scenes such as ADC (analog to digital converter) which need band gap reference and have certain current driving capability.
In view of the above problems, the inventors creatively propose a hybrid bandgap reference and an integrated circuit with current drive capability of the present invention, and the hybrid bandgap reference and the integrated circuit with current drive capability of the present invention are explained and described in detail below.
The invention provides a mixed band gap reference with current driving capability, which comprises the following components: a current mode band gap reference core, a voltage mode band gap reference core, and a resistance trimming network; the voltage bandgap reference core includes: the drive module, the drive module includes: the first resistor trimming network.
The current-mode band gap reference core is connected with the voltage-mode band gap reference core through a second resistance trimming network, and the current-mode band gap reference core and the voltage-mode band gap reference core are combined creatively by using the resistance trimming network, so that the voltage-mode band gap reference core is based on V BE The nonlinear compensated bandgap reference requires a first order zero temperature drift current to provide bias for the BJT (i.e., triode), while the current in the conventional voltage model bandgap reference is PTAT (proportional to temperature) current, so the present invention generates a first order zero temperature drift current from the current-mode bandgap reference core to provide bias for the BJT, and the first order zero temperature drift current is a temperature independent current.
The voltage-mode band gap reference core compensates the nonlinearity of the band gap reference voltage by adjusting the resistance of the first resistance trimming network and the resistance of the second resistance trimming network based on the first-order zero-temperature drift current, and meanwhile, the current driving capability of milliamp level or more is generated through the driving module.
In some possible embodiments, the drive module further comprises: the first resistor, the second resistor, the amplifier and the driving unit; the voltage-mode bandgap reference core further comprises: the circuit comprises a starting circuit, a third resistor, a first triode and a second triode.
The starting circuit is connected between the negative end and the power end of the amplifier in a bridging way; one end of the driving unit is connected with the power supply end, and the other two ends of the driving unit are respectively connected with the input end of the first resistor trimming network and the output end of the amplifier; the output end of the first resistor trimming network is respectively connected with the first end of the first resistor and the first end of the second resistor.
The second end of the first resistor is connected with the first end of the third resistor and the positive end of the amplifier respectively; the second end of the second resistor is connected with the negative end of the amplifier and the emitter of the first triode respectively; the second end of the third resistor is connected with the emitter of the second triode; the base electrode of the first triode is connected with the collector electrode of the first triode and grounded; the base of the second triode is connected with the collector of the second triode and grounded.
For the driving module, all circuits or components which can supply current to the first resistor trimming network when no load exists and increase output current when load current exists can be used for providing additional current for the load function. One preferred option for the drive unit is:
the drive unit includes: driving the MOS tube; the first end of the driving MOS tube is connected with the power end, the second end of the driving MOS tube is connected with the output end of the amplifier, the third end of the driving MOS tube is connected with the input end of the first resistor trimming network, and the third end of the driving MOS tube outputs the band gap reference voltage.
Because the driving MOS tube works under the action of the negative feedback loop, a main pole exists at the second end of the driving MOS tube, a secondary main pole exists at the third end of the driving MOS tube, and in order to separate the driving MOS tube from the secondary main pole, the inventor creatively proposes to separate the main pole and the secondary main pole by using a Miller compensation capacitor.
The drive unit therefore further comprises: miller compensation capacitance; one end of the miller compensation capacitor is connected with the second end of the driving MOS tube; the other end of the miller compensation capacitor is connected with the third end of the driving MOS tube. From the above description, it is clear that: the driving MOS tube, the Miller compensation capacitor, the first resistor trimming network, the first resistor, the second resistor and the amplifier form a negative feedback loop, and the negative feedback can provide current driving capability of milliamp level or more.
Since the amplifier has two branches at the positive and negative ends, the second resistor trimming network connected with the amplifier comprises: the first sub-resistor trimming network and the second sub-resistor trimming network; the first end of the first sub resistor trimming network receives first-order zero temperature drift current, and the second end of the first sub resistor trimming network is connected with the negative end of the amplifier; the first end of the second sub-resistor trimming network receives the first-order zero-temperature drift current, and the second end is connected with the positive end of the amplifier.
In order to better illustrate the hybrid bandgap reference with current driving capability according to the present invention, referring to fig. 3, a schematic structural diagram of a hybrid bandgap reference with current driving capability according to an embodiment of the present invention is shown. FIG. 3 illustrates an exemplary PMOS tube MP and Miller capacitance C C Shown for example.
The left dashed box 10 in FIG. 3 is a current-mode bandgap referenceThe core, the right virtual frame 20 is a voltage-mode band gap reference core, and the two cores pass through a second resistor trimming network R NL And (5) connection. Start-Up represents a Start-Up circuit, one in each of the two bandgap reference cores can be known. VDDA represents the power supply terminal and VSSA represents ground.
The current-mode band gap reference core generates first-order zero-temperature drift current as the bias of the triode, namely: third triode Q in current-mode bandgap reference core 3 A first-order zero-temperature drift current I independent of temperature flows in the circuit 3 First triode Q in voltage-mode bandgap reference core 1 A PTAT current is flowing.
A Start-Up circuit Start-Up in the voltage bandgap reference core is connected across the negative terminal of the amplifier Omp and the power supply terminal VDDA; the source electrode of the driving MOS tube MP is connected with the power supply end VDDA, and the drain electrode is connected with the first resistor trimming network R 1 The gate is connected to the output of the amplifier Omp.
Miller compensation capacitor C C The drain electrode of the driving MOS tube MP outputs a reference voltage V REF 。
First resistor trimming network R 1 And a first resistor R 2A A first end, a second resistor R 2B Are respectively connected with the first ends of the two parts; first resistor R 2A And a third resistor R 0 The first terminal of (a) and the positive terminal of the amplifier Omp are connected respectively.
Second resistor R 2B A second terminal of the amplifier Omp and a first triode Q 1 The emitters of which are respectively connected; r of third resistance 0 Second end and second triode Q 2 Emitter connection of (a); first triode Q 1 Is connected with the collector of the self and is grounded to VSSA; second triode Q 2 Is connected to its own collector and to ground VSSA. Driving MOS tube MP, miller compensation capacitor C C First resistor trimming network R 1 A first resistor R 2A A second resistor R 2B And the amplifier Omp forms a negative feedback loop (namely the driving module) which can provide electricity with the level of milliamp or moreFlow driving capability.
The band gap reference of the current model provides first-order zero-temperature drift current I 3 The simplified model corresponding to FIG. 3 is that of FIG. 4, in which a first transistor Q may be set 1 Second triode Q 2 Third triode Q 3 The area ratio of the respective emission areas is 1: n:1, a step of; resistance value of R2A for first resistor and R for second resistor 2B Is assumed to be equal to the resistance R 2 The method comprises the following steps: r is R 2A ＝R 2B ＝R 2 。
The circuit structure of fig. 3 and 4 can be seen as follows:
due to the first triode Q 1 The current flowing through the first transistor Q is PTAT current 1 Base-emitter voltage V of (2) BE1 Can be expressed as:
third triode Q 3 The current flowing through the third triode Q is independent of temperature 3 Base-emitter voltage V of (2) BE3 Can be expressed as:
the nonlinear compensation current I can be deduced NL The method comprises the following steps:
neglecting offset voltage of operational amplifier can obtain V REF The expression is:
if it is required to compensate V BE1 The nonlinear temperature coefficient term of (c) requires:
in the above formula, V g0 Is a band gap voltage at-273 ℃, T r η is a process-dependent constant for the desired operating temperature of the circuit. It is thus known that the bandgap reference voltage nonlinearity can be effectively compensated for by selecting an appropriate resistance ratio.
The driving MOS tube MP can provide large current to R 1 And a current load for driving the drain current of the MOS tube MP to flow through R during no-load 1 . With load current I L When the negative feedback loop is used, the gate voltage of the driving MOS tube MP is pulled down, and the drain current I of the driving MOS tube MP D The increase produces a current drive capability on the order of milliamps or more to provide additional current to the load.
In order to make the reference have enough current driving capability and have better load adjustment rate, the driving MOS tube MP should be designed to have larger width-to-length ratio.
A main pole exists at the grid electrode of the MP tube of the driving MOS tube in the negative feedback loop, a secondary main pole exists at the drain electrode, and the capacitor C is compensated by a Miller C And the grid electrode and the drain electrode of the driving MOS tube MP are connected, so that the main pole and the secondary pole are separated, and the stability of the negative feedback loop is improved.
In order to compensate adverse effect of process deviation on reference voltage precision, the invention provides a design R in a mixed band gap reference with current driving capability 1 And R is NL And the two resistor trimming networks respectively correct the first-order temperature coefficient and the high-order nonlinear term.
The mixed band-gap reference with current driving capability provided by the invention has the advantages that through simulation verification, the temperature drift of the reference voltage output by the band-gap reference is smaller than 2 ppm/DEG C, mA-level driving current can be provided, and the mixed band-gap reference can be applied to application scenes such as high-precision AD (analog-digital) and the like which need low temperature drift and current driving capability.
Based on the above hybrid bandgap reference with current driving capability, an embodiment of the present invention further provides an integrated circuit, where the integrated circuit includes the hybrid bandgap reference with current driving capability as described in any one of the above.
By way of the above example, the present invention provides a hybrid bandgap reference with current drive capability comprising: a current mode band gap reference core, a voltage mode band gap reference core, and a resistance trimming network; the voltage bandgap reference core includes: the drive module, the drive module includes: the first resistor trimming network.
The current-mode band gap reference core is connected with the voltage-mode band gap reference core through a second resistor trimming network, the current-mode band gap reference core generates first-order zero-temperature drift current which is used for providing bias for the triode and is irrelevant to temperature.
The voltage-mode band gap reference core is based on first-order zero-temperature drift current, compensates band gap reference voltage nonlinearity by adjusting the resistance of the first resistance trimming network and the resistance of the second resistance trimming network, and generates current driving capability of milliamp level or more through the driving module.
The invention provides a mixed band gap reference with current driving capability, which is different from the structure of the prior traditional buffer operation amplifier or LDO connected with unit gain and an additional resistor trimming network, and creatively proposes a band gap reference based on V BE The high-order term compensated current-voltage mode mixed band-gap reference utilizes a current model band-gap reference to provide a first-order zero-temperature drift current as the bias of a triode, and utilizes a resistance trimming network contained in the band-gap reference to combine the current model band-gap reference and the voltage model band-gap reference.
The nonlinearity of the band gap reference voltage is compensated by adjusting the resistance of the resistance trimming network, and meanwhile, the current driving capability of milliamp level or more is generated through negative feedback. Therefore, the invention achieves the design purpose of low temperature drift and has better current driving capability, can be applied to high-precision AD and other application scenes needing low temperature drift and current driving capability, simultaneously avoids a resistor trimming network which is additionally added when a later stage is connected with LDO or a unit gain buffer operational amplifier, reduces trimming cost, and has higher practicability.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (10)
1. A hybrid bandgap reference having current drive capability, said hybrid bandgap reference comprising: a current mode band gap reference core, a voltage mode band gap reference core, and a resistance trimming network;
the voltage-mode bandgap reference core includes: a drive module, the drive module comprising: a first resistor trimming network;
the current-mode band gap reference core is connected with the voltage-mode band gap reference core through a second resistor trimming network, the current-mode band gap reference core generates first-order zero-temperature drift current, and the first-order zero-temperature drift current is temperature-independent current;
the voltage-mode band gap reference core compensates band gap reference voltage nonlinearity by adjusting the resistance of the first resistance trimming network and the resistance of the second resistance trimming network based on the first-order zero-temperature drift current, and generates current driving capability of milliamp level or more through the driving module.
2. The hybrid bandgap reference of claim 1, wherein said drive module further comprises: the first resistor, the second resistor, the amplifier and the driving unit; the voltage-mode bandgap reference core further comprises: the starting circuit, the third resistor, the first triode and the second triode;
the starting circuit is connected between the negative end and the power end of the amplifier in a bridging way;
one end of the driving unit is connected with the power supply end, and the other two ends of the driving unit are respectively connected with the input end of the first resistor trimming network and the output end of the amplifier;
the output end of the first resistor trimming network is respectively connected with the first end of the first resistor and the first end of the second resistor;
the second end of the first resistor is respectively connected with the first end of the third resistor and the positive end of the amplifier;
the second end of the second resistor is respectively connected with the negative end of the amplifier and the emitter of the first triode;
the second end of the third resistor is connected with the emitter of the second triode;
the base electrode of the first triode is connected with the collector electrode of the first triode and grounded;
and the base electrode of the second triode is connected with the collector electrode of the second triode and grounded.
3. The hybrid bandgap reference of claim 2, wherein said drive unit comprises: driving the MOS tube;
the first end of the driving MOS tube is connected with the power end, the second end of the driving MOS tube is connected with the output end of the amplifier, the third end of the driving MOS tube is connected with the input end of the first resistor trimming network, and the third end of the driving MOS tube outputs band gap reference voltage.
4. A hybrid bandgap reference as claimed in claim 3, wherein said drive unit further comprises: miller compensation capacitance;
one end of the miller compensation capacitor is connected with the second end of the driving MOS tube;
and the other end of the miller compensation capacitor is connected with the third end of the driving MOS tube.
5. The hybrid bandgap reference of claim 2, wherein said second resistance trimming network comprises: the first sub-resistor trimming network and the second sub-resistor trimming network;
the first end of the first sub-resistor trimming network receives the first-order zero-temperature drift current, and the second end of the first sub-resistor trimming network is connected with the negative end of the amplifier;
and a first end of the second sub-resistor trimming network receives the first-order zero-temperature drift current, and a second end of the second sub-resistor trimming network is connected with the positive end of the amplifier.
6. The hybrid bandgap reference of claim 2, wherein said current-mode bandgap reference core comprises: a third triode;
the emitter of the third triode receives the first-order zero-temperature drift current, and the base is connected with the collector of the third triode and grounded;
the area ratio of the emitting areas of the first triode, the second triode and the third triode is 1: n:1.
7. the hybrid bandgap reference of claim 2, wherein said first resistor has a value equal to a value of said second resistor and different from a value of said third resistor.
8. A hybrid bandgap reference as claimed in claim 3 wherein, when idling, the third terminal output current of said driving MOS transistor flows only through said first resistor trimming network;
when load current exists, the voltage on the second end of the driving MOS tube is pulled down, and the output current of the third end of the driving MOS tube is increased, so that current driving capability of milliamp level or more is generated, and additional current is provided for the load.
9. The hybrid bandgap reference of claim 4, wherein a main pole is present at a second end of said driving MOS transistor, a secondary main pole is present at a third end of said driving MOS transistor, and said miller compensation capacitance is used to separate said main pole and said secondary main pole.
10. An integrated circuit comprising a hybrid bandgap reference having current drive capability as claimed in any of claims 1 to 9.
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| CN202311261635.2A CN117193458A (en) | 2023-09-27 | 2023-09-27 | Hybrid bandgap reference and integrated circuit with current drive capability |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117970992A (en) * | 2024-04-01 | 2024-05-03 | 青岛元通电子有限公司 | High-precision power reference voltage source control circuit and control method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117970992A (en) * | 2024-04-01 | 2024-05-03 | 青岛元通电子有限公司 | High-precision power reference voltage source control circuit and control method |
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