CN117170157A - Chip-level mid-infrared efficient frequency conversion method based on optical soliton tunneling effect - Google Patents
Chip-level mid-infrared efficient frequency conversion method based on optical soliton tunneling effect Download PDFInfo
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 26
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a chip-level infrared high-efficiency frequency conversion method based on an optical soliton tunneling effect. According to the method, the waveguide core layer and the cladding layer are formed by adopting AlGaAs with different Al components, and the geometrical structure of the multi-layer AlGaAs optical waveguide is designed to realize dispersion regulation, so that the Duan Guanggu sub-pulse of the 4 mu m wave can be converted into the 5.7-6.4 mu m wave band through the soliton tunneling effect, and the highest conversion efficiency of the waveguide can reach 69%. The chip-level mid-infrared high-efficiency frequency conversion method based on the optical soliton tunneling effect is a novel and efficient method, can enable the generation of mid-infrared light sources to be more effective and low in cost, and can be used in the fields of optical communication, optical sensing, photomedicine and the like.
Description
Technical Field
The invention relates to nonlinear optics, nonlinear frequency conversion, soliton tunneling, dispersion wave generation and supercontinuum generation, in particular to a chip-level infrared efficient frequency conversion method based on optical soliton tunneling effect. According to the method, the Duan Guanggu subpulse of the 4 mu m wave is injected into the AlGaAs integrated optical waveguide, and is converted into the 5.7-6.4 mu m wave band through soliton tunneling effect, so that the highest conversion efficiency reaches 69%. The method is mainly applied to the field of nonlinear frequency conversion of the mid-infrared band.
Background
In the existing optical field, research on mid-infrared light sources has been a hot topic. The mid-infrared spectrum is a fingerprint spectrum of a plurality of important substance molecules, has wide application prospect, and can be used in the fields of biology, chemistry, environmental monitoring, meteorology and the like. In addition, mid-infrared light sources have important applications in the fields of optical communications, optical sensing, and the like. However, the mid-infrared light source has been limited in its implementation due to the lack of an effective gain medium in the mid-infrared band, the difficulty in the preparation and control of the light source, and the low conversion efficiency. In order to solve these problems, a nonlinear frequency conversion method capable of efficiently converting the mid-infrared spectrum is required.
In recent years, with the continuous development of photonics technology, mid-infrared light source research based on nonlinear optical effect has been advanced to some extent. The optical soliton tunneling effect is an important nonlinear optical phenomenon, and can be used for realizing frequency conversion of a mid-infrared light source. Soliton tunneling is closely related to dispersive wave generation. The dispersive wave is a resonant wave having a phase match with the emitted soliton, and the spectral position of such a resonant wave can be predicted by a phase matching condition. In general, an optical soliton exists in an anomalous dispersion region, and a soliton-induced dispersion wave is generated in a normal dispersion region, however, by properly designing a dispersion curve to generate a potential barrier, both the optical soliton and the generated dispersion wave can fall in the anomalous dispersion region, and thus the dispersion wave can finally form a new soliton wave. Meanwhile, as the raman-induced soliton self-frequency shift continuously transfers the optical soliton energy to the dispersion wave, the finally obtained solitary dispersion wave has most of pumping soliton energy, namely the so-called soliton tunneling effect. A typical group velocity dispersion barrier is a normal dispersion region sandwiched between two anomalous dispersion regions, so how to manipulate the dispersion curve of a waveguide to form multiple zero dispersion wavelengths to create a barrier is a major goal of our design of waveguides.
GaAs-based materials, which are widely used in optical communication systems, have been the preferred materials for the fabrication of semiconductor solid state lasers because they can easily have their band gap falling within the usual band for optical communication after doping. AlGaAs (aluminum gallium arsenide) in the GaAs-based material has rich nonlinear effect, is completely transparent in an optical communication wave band, is very suitable for manufacturing an all-optical signal processing device based on the nonlinear effect, and is easy to integrate with other photoelectric devices due to the small size of the photoelectric device of the AlGaAs, so that the AlGaAs-based material attracts attention of a plurality of scientific researchers. In addition, the Al components in AlGaAs are different, so that the material has different refractive indexes, and the dispersion curve of the AlGaAs optical waveguide can be flexibly regulated and controlled by growing films with different Al components on the substrate for multiple times.
Disclosure of Invention
The invention provides a chip-level infrared efficient frequency conversion method based on an optical soliton tunneling effect. According to the method, alGaAs optical waveguide with a multilayer structure is used, the thicknesses and widths of the waveguide core layer and the covering layer are designed, potential barriers of a dispersion curve are generated, and finally, efficient frequency conversion of optical solitons is realized through a tunneling effect. The method can convert the pumping light with the wavelength of 4 mu m into the wave band with the wavelength of 5.7-6.4 mu m through tunneling, and the highest conversion efficiency of the pumping light with the wavelength of 4 mu m reaches 69%. The effective conversion of the mid-infrared spectrum is achieved without the need for high power light sources or other external devices.
The mid-infrared high-efficiency frequency conversion method provided by the invention adopts soliton pulse light as a pumping light source. An optical soliton is a special form of light wave in a medium, has extremely high stability, and can maintain the original shape, amplitude and speed in the propagation process. By utilizing the characteristic of an optical soliton, the mid-infrared frequency high-efficiency conversion can be realized in a limited waveguide length through the design of a waveguide geometric structure and nonlinear effect.
The soliton pulse light has a pulse width in picosecond or femtosecond order and a peak power in watt level; the nonlinear optical effect in the nonlinear material can be effectively excited by utilizing higher peak power and shorter laser pulse width, which is beneficial to improving the intensity of high-order nonlinear effect and high-order dispersion effect and plays an important role in realizing the generation of dispersion wave and soliton tunneling effect.
The mid-infrared high-efficiency frequency conversion method provided by the invention adopts a novel optical soliton tunneling effect. The soliton tunneling effect requires a potential barrier on the group velocity dispersion curve so that the dispersion wave phase-matched to the soliton is in the anomalous dispersion region, and furthermore, group velocity matching between the pump soliton and the converted soliton is another important condition for efficient conversion. The generation of the scattered wave with the group velocity matching can be understood as the spectrum soliton coupling from an initial state to an eigenstate, and partial solitons can transfer most of energy to a long wavelength dispersion wave position, so that the scattered wave can be used as an implementation way of efficient soliton frequency conversion, and the conversion of middle infrared band light to a low frequency is realized.
The multilayer waveguide provided by the invention adopts Al 0.8 Ga 0.2 As is used As the waveguide substrate and the first cladding layer, al 0.2 Ga 0.8 As serves As a waveguide core layer and a second cladding layer. By controlling the thickness and width of the waveguide core layer, the first cover layer and the second cover layer and utilizing the waveguide dispersion to offset the material dispersion, the flexible regulation and control of the waveguide group velocity dispersion curve can be effectively realized, a plurality of zero dispersion points are generated, the potential barrier of the group velocity dispersion curve is generated, and the condition of soliton tunneling effect is satisfied.
The invention provides that the soliton tunneling phenomenon can be utilized to realize high-efficiency soliton frequency conversion. The geometry parameters of the waveguide are designed to produce high power solitary scattered waves at the desired frequencies. The soliton self-frequency shift caused by the Raman effect of the material is utilized, so that the frequency conversion efficiency is higher. The method does not need a high-power pumping light source and other additional frequency conversion devices to operate, has small size and convenient integration, and can be realized by using a single AlGaAs optical waveguide.
The invention has the beneficial effects that:
(1) The invention adopts AlGaAs as waveguide material, the material has the advantages of strong light field constraint, large transparent window, transparency in mid-infrared light communication wave band, large nonlinear effect coefficient, easy integration with other photoelectric devices, and the like, and the Raman effect of the material is also a key condition for realizing frequency conversion in the method;
(2) According to the invention, alGaAs materials with different Al components are used as the core layer and the cover layer of the waveguide, so that high-quality AlGaAs films are easy to stack and grow in the actual production process; meanwhile, the Al components in AlGaAs are different, so that the material has different refractive indexes, flexible regulation and control of a dispersion curve can be supported, a dispersion barrier required by soliton tunneling can be realized, and the frequency of the obtained soliton dispersion wave can be regulated;
(3) The invention utilizes a multi-layer waveguide structure to generate multiple zero dispersion points, and adjusts the group velocity dispersion curve of the waveguide through the control of the thickness and width parameters of each layer of film, so that a dispersion barrier is generated between the soliton frequency and the dispersion wave frequency, and the soliton and the phase-matched dispersion wave are ensured to be in an anomalous dispersion region and have the same group velocity, thereby meeting the occurrence condition of soliton tunneling and finally obtaining the soliton dispersion wave with high conversion efficiency;
(4) The invention utilizes the soliton tunneling effect to achieve the aim of converting the mid-infrared soliton frequency to a low frequency, and utilizes the high-efficiency conversion characteristic of the mid-infrared soliton frequency to effectively improve the frequency conversion efficiency. The method needs low peak power of the light source, has short waveguide length and is easy to realize chip-level integration. The chip-level mid-infrared high-efficiency frequency conversion method based on the optical soliton tunneling effect is a novel and efficient method, can enable the generation of mid-infrared light sources to be more effective and low in cost, and can be used in the fields of optical communication, optical sensing, photomedicine and the like.
Drawings
Fig. 1 is a schematic cross-sectional view of an AlGaAs optical waveguide.
Fig. 2 is a group velocity dispersion curve of an AlGaAs optical waveguide.
Fig. 3 is a graph of the frequency domain evolution of a pump soliton pulse as it propagates along a waveguide.
Fig. 4 is a graph of pump soliton pulse peak power versus frequency conversion efficiency and dispersion peak power.
Detailed Description
The invention is further described below with reference to the accompanying drawings and examples of implementation of the method for efficient frequency conversion of infrared in chip scale based on the optical soliton tunneling effect.
Fig. 1 is a schematic cross-sectional view of an AlGaAs optical waveguide. The substrate 6 is Al 0.8 Ga 0.2 As, the waveguide core layer 5 is Al 0.2 Ga 0.8 As, the first coating layer 4 is Al 0.8 Ga 0.2 As, the second coating layer 3 is Al 0.2 Ga 0.8 As, the third coating layer 2 is Al 0.8 Ga 0.2 As, the fourth cover layer 1 is air.
Fig. 2 is a group velocity dispersion curve of an AlGaAs optical waveguide. It can be seen that the group velocity dispersion curve of the optical waveguide has a morphology in which two anomalous dispersion regions sandwich a normal dispersion region. Therefore, an optical soliton pulse with the wavelength close to the zero dispersion point of the short wave end is input into the short wave end anomalous dispersion region, and soliton dispersion waves can be generated at the position where the phase matching of the long wave end anomalous dispersion region is met.
In the simulation calculation, the total height of the AlGaAs optical waveguide is 4.4 μm, the optical waveguide width is 6.43 μm, the core layer thickness is 2.05 μm, the first cover layer thickness is 0.85 μm, the second cover layer thickness is 0.7 μm, and the third cover layer thickness is 0.8 μm, which is easy to realize in the practical process; simulation is based on a nonlinear schrodinger equation, the nonlinear coefficient is gamma=2.09, and the self-steepening coefficient is tau s =0.56 fs; the peak power of the optical soliton pulse is P in =10w, pulse width T 0 =80 fs, wavelength λ=4000 nm.
Fig. 3 is a graph of the frequency domain evolution of a pump soliton pulse as it propagates along a waveguide. The spectrum of the incident pump soliton is widened symmetrically under the action of self-phase modulation in the initial stage of propagation, the spectrum of the first split fundamental soliton is widened rapidly under the action of soliton splitting effect in the second stage, and when the first split fundamental soliton is red-shifted to the vicinity of zero dispersion wavelength of a short wave end (about 4400 nm) due to self-frequency shift of a Raman soliton, the spectrum of the first split fundamental soliton keeps the original position on the spectrum when the first split soliton is transmitted along an optical waveguide due to the balance of spectrum recoil effect and Raman self-frequency shift, and the energy of the first split fundamental soliton is continuously coupled to the phase matching wavelength of an anomalous dispersion region of a long wave end to generate soliton dispersion wavelength, wherein the wavelength of the soliton dispersion wavelength is about 6000nm, and soliton coupling is continuously generated until the energy of the first split fundamental soliton is completely coupled into the soliton dispersion wavelength to form a new soliton.
Fig. 4 is an illustration of the effect of pump soliton pulse peak power on frequency conversion efficiency and dispersion peak power. The peak power of the pumping soliton has an optimal value, and the maximum frequency conversion efficiency and dispersion peak power are provided at the optimal value; if the frequency conversion efficiency and the dispersion peak power are lower than the optimal value, the frequency conversion efficiency and the dispersion peak power are reduced until the power is smaller than a threshold value for tunneling, and effective frequency conversion cannot be performed; above this optimum, the frequency conversion efficiency will decrease and the dispersion peak power will go through a decrease followed by an increase. The optimum depends on factors such as the actual pulse width, pulse wavelength and waveguide structure, and thus needs to be obtained by trial and error in practical applications.
Table 1 is the effect of changing the waveguide geometry used in the examples on conversion efficiency. In table 1 we change one of the geometric parameters of the waveguide in the above example of implementation and keep the remaining waveguide parameters unchanged, as the first row in the table indicates changing the width of the waveguide, the first to third cover layer heights to the corresponding values in the table while keeping the remaining parameters unchanged. The wavelength of the generated chromatic dispersion wave and the conversion efficiency data thereof under different waveguide geometrical parameters obtained through simulation are correspondingly written into a table, and the peak power and the pulse width of pumping pulses used by the simulation are recorded to obtain the table 1. As is clear from Table 1, the center wavelength and conversion efficiency of the dispersion wave generated when the waveguide parameters were slightly changed were not greatly changed, and were stabilized in the range of 6 to 6.5 μm and about 70%, respectively. It should be noted that the conversion efficiency in table 1 is above 55%, the conversion efficiency is high, the stability is good, and the influence of the small errors in waveguide manufacturing is small.
Table 2 shows the effect on the dispersive wave conversion efficiency of the Al composition of the waveguide materials used in the examples. Table 2 we change the Al composition of AlGaAs material used for the waveguides in the above examples, as the first row in the table indicates Al in the examples of the waveguides 0.2 Ga 0.8 As material and Al 0.8 Ga 0.2 The Al composition of the As material was changed to the corresponding values in the table, respectively, while the other material was kept unchanged. The wavelength of the generated dispersion wave obtained by simulation after the Al component is changed and the conversion efficiency data thereof are correspondingly written into a table, and the pumping wavelength, the pulse peak power and the pulse width used by the simulation are recorded to obtain the table 2. As is clear from Table 2, the dispersion bandwidth generated when the Al component of the AlGaAs material was slightly changed was not greatly changed, and the dispersion bandwidth was stabilized to about 1. Mu.m, and the wavelength conversion efficiency was 59% or more. Furthermore, as can be seen from Table 2, when the refractive index difference of the two materials is reduced (correspondence tableAl of (C) 0.2 Ga 0.8 As becomes Al 0.25 Ga 0.75 As and Al 0.8 Ga 0.2 As becomes Al 0.75 Ga 0.25 As) and the wavelength of the generated dispersion wave are shifted toward the short-wave side, when the refractive index difference increases (Al in the table 0.2 Ga 0.8 As becomes Al 0.1 Ga 0.9 As and Al 0.8 Ga 0.2 As becomes Al 0.9 Ga 0.1 As), the desired pump wavelength and the resulting dispersion wavelength are shifted toward the long-wavelength side.
Table 3 shows a comparison of the performance parameters of the dispersive wave produced by the present invention with those produced by other dispersive wave production methods. Comparing the data in table 3 with the conversion efficiency data in tables 1 and 2, it can be seen that the method used in the invention has higher conversion efficiency, and the generated dispersion wave has a longer wavelength shift than the original pump wavelength, and the generated dispersion wave band width is not much different from the results of other methods, so that the conversion efficiency and conversion distance of the dispersion wave generated in the invention have more obvious advantages than those of other methods on the basis of maintaining the bandwidth.
TABLE 1 Performance parameters of various waveguide parameters to generate color dispersion waves
TABLE 2 Performance parameters of different Al composition waveguides to generate color dispersion waves
TABLE 3 Performance parameters for various methods of generating color dispersion waves
The above-described embodiments are intended to illustrate the present invention, not to limit it, and any modifications and variations made thereto are within the spirit of the invention and the scope of the appended claims.
Claims (6)
1. The chip-level infrared high-efficiency frequency conversion method based on the optical soliton tunneling effect is characterized by comprising the following steps of: according to the method, dispersion regulation and control are achieved through designing the geometric structure of the multi-layer AlGaAs optical waveguide, the mid-infrared photon frequency is converted to a required low frequency through the photon tunneling effect based on the multi-layer AlGaAs optical waveguide, and the converted frequency can be adjusted through the multi-layer AlGaAs optical waveguide structure.
2. The mid-infrared efficient frequency conversion method of claim 1, wherein: al is used for multi-layer AlGaAs optical waveguide m Ga n As is used As waveguide material, and the substrate is Al m Ga n As, the waveguide core layer is Al n Ga m As, the first coating layer is Al m Ga n As, the second coating layer is Al n Ga m As, the third coating layer is Al m Ga n As, the fourth coating is air.
3. The mid-infrared efficient frequency conversion method of claim 1, wherein: the substrate of the multi-layer AlGaAs optical waveguide is Al 0.8 Ga 0.2 As, the waveguide core layer is Al 0.2 Ga 0.8 As, the first coating layer is Al 0.8 Ga 0.2 As, the second coating layer is Al 0.2 Ga 0.8 As, the third coating layer is Al 0.8 Ga 0.2 As, the fourth coating is air.
4. The mid-infrared efficient frequency conversion method of claim 1, wherein: the AlGaAs optical waveguide had a total height of 4.4 μm, an optical waveguide width of 6.43 μm, a core layer thickness of 2.05 μm, a first cladding layer thickness of 0.85 μm, a second cladding layer thickness of 0.7 μm, and a third cladding layer thickness of 0.8 μm.
5. The mid-infrared efficient frequency conversion method of claim 2, wherein: the waveguide core layer and the cladding layers are formed by AlGaAs with different Al compositions, so that the group velocity dispersion of the waveguide can be regulated and controlled through the thickness and the width of each cladding layer of the waveguide core layer and the frequency, and a required dispersion curve is obtained.
6. The mid-infrared efficient frequency conversion method of claim 2, wherein: the multi-zero dispersion point is generated by utilizing the multi-layer waveguide structure, and the dispersion curve of the waveguide is adjusted by controlling the thickness and width parameters of each layer of film to generate a dispersion barrier, so that the frequencies of solitons and phase-matched dispersion waves are both in an anomalous dispersion region, a normal dispersion region exists between the solitons and the phase-matched dispersion waves, the occurrence condition of soliton tunneling is met, and the soliton dispersion waves with high conversion efficiency are finally obtained.
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