CN117169637A - Maximum safe running current testing method and related device for hybrid inverter - Google Patents
Maximum safe running current testing method and related device for hybrid inverter Download PDFInfo
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Abstract
The application discloses a maximum safe operation current testing method and a related device of a hybrid inverter, wherein the method comprises the following steps: simulating the aging thermal impedance of the target hybrid inverter by adopting a preset Foster thermal impedance equivalent model; calculating junction temperature of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance; if the junction temperature of the hybrid device does not reach the highest junction temperature, updating the initial load current by adopting a dichotomy method to obtain updated load current, and returning to the step of calculating the junction temperature of the hybrid device; if the junction temperature of the hybrid device reaches the highest junction temperature, judging whether the simulation of the ageing thermal impedance is finished in a traversing way, if not, returning to the ageing thermal impedance simulation step, updating the ageing thermal impedance until the traversal is finished, and taking the current updated load current as the maximum safe running current. The application can solve the technical problem that the running of the hybrid inverter lacks reliability because the fixed current value obtained by the existing experiment is not suitable for the full life cycle of the health change of the hybrid inverter.
Description
Technical Field
The application relates to the technical field of equipment testing, in particular to a maximum safe running current testing method and a related device of a hybrid inverter.
Background
Compared with a silicon (Si) base Insulated Gate Bipolar Transistor (IGBT), the silicon carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) serving as a novel wide-bandgap semiconductor device has the advantages of low switching loss, high switching frequency and the like, and is beneficial to improving the power density of a system. However, due to the immature production process of the SiC material and the high cost, the current SiC MOSFET is difficult to realize large-scale application in a short period. In order to solve the problem, a mixed device structure formed by connecting an Si IGBT and an SiC MOSFET in parallel is studied, the advantages of high current carrying capacity of the Si IGBT and low switching loss of the SiC MOSFET are combined by controlling the switching sequence of the device, and finally, the performance close to that of the SiC MOSFET device is achieved at lower cost.
The SiC MOSFET in the hybrid device is generally turned on earlier than the Si IGBT and turned off later than the Si IGBT, so that zero voltage on and off of the Si IGBT are ensured, and the loss of the hybrid device is reduced to the greatest extent. However, the switching sequence causes the SiC MOSFET to bear main switching loss and is influenced by the high thermal resistance of the SiC MOSFET itself, so that the junction temperature of the SiC MOSFET is far higher than that of the Si IGBT, and the highest junction temperature limit is easily exceeded under heavy load. Therefore, when the hybrid device converter operates, the maximum safe operation current under the highest junction temperature limit is required to be used as a judgment condition for protecting an action threshold or other control, so that the thermal failure of the device is avoided, and the working reliability of the converter is improved.
Conventionally, the maximum safe operating current of a hybrid inverter is generally experimentally measured in the initial state of health of the hybrid and is used as a basis for the operation of other control modules in operation after the inverter. However, the thermal resistance of the hybrid device is constantly changing with aging, which results in a synchronous change in the maximum safe operating current of the inverter. Or, the junction temperature and the thermal resistance in the operation process of the hybrid inverter are in positive correlation, compared with the initial health state, the maximum safe operation current of the hybrid inverter in the later aging period is reduced, and the experimentally measured fixed value is not applicable any more, so that the reliability of the hybrid inverter in the later operation period is difficult to ensure.
Disclosure of Invention
The application provides a maximum safe running current testing method and a related device of a hybrid inverter, which are used for solving the technical problem that the running of the hybrid inverter lacks reliability because the fixed current value obtained by the existing experiment is not suitable for the full life cycle of the health change of the hybrid inverter.
In view of this, a first aspect of the present application provides a method for testing a maximum safe operating current of a hybrid inverter, including:
simulating the aging thermal impedance of the target hybrid inverter by adopting a preset Foster thermal impedance equivalent model;
calculating the junction temperature of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance, wherein the junction temperature of the hybrid device comprises a MOSFET junction temperature and an IGBT junction temperature;
if the junction temperature of the hybrid device does not reach the highest junction temperature, updating the initial load current by adopting a dichotomy to obtain updated load current;
replacing the initial load current with the updated load current, and returning to the step of calculating a junction temperature of the hybrid device in the target hybrid inverter according to the initial load current and the aged thermal impedance;
if the junction temperature of the hybrid device reaches the highest junction temperature, judging whether the simulation of the ageing thermal impedance is finished in a traversing way, if not, returning to the step of adopting a preset Foster thermal impedance equivalent model to simulate the ageing thermal impedance of the target hybrid inverter, updating the ageing thermal impedance until the simulation is finished, and taking the current updated load current as the maximum safe running current.
Preferably, the calculating a hybrid junction temperature in the target hybrid inverter according to the initial load current and the aged thermal impedance, wherein the hybrid junction temperature includes a MOSFET junction temperature and an IGBT junction temperature, includes:
calculating the device loss of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance;
calculating a crusting temperature difference of a hybrid device in the target hybrid inverter based on the device loss;
and calculating the junction temperature of the hybrid device in the target hybrid inverter according to the junction temperature difference and the environment-related temperature, wherein the junction temperature of the hybrid device comprises a MOSFET junction temperature and an IGBT junction temperature.
Preferably, if the junction temperature of the hybrid device does not reach the highest junction temperature, updating the initial load current by a dichotomy to obtain an updated load current, including:
configuring a value range of load current;
and if the junction temperature of the hybrid device does not reach the highest junction temperature, adopting a dichotomy to update the initial load current in the value range in a mode of taking the intermediate value to obtain the updated load current.
Preferably, if the junction temperature of the hybrid device reaches the highest junction temperature, determining whether the simulation of the aging thermal impedance is completed, if not, returning to the step of simulating the aging thermal impedance of the target hybrid inverter by using the preset Foster thermal impedance equivalent model, updating the aging thermal impedance until the completion of the simulation, taking the current updated load current as the maximum safe operation current, and then further including:
and obtaining the maximum safe running current in the whole life cycle of the target hybrid inverter in an aging thermal impedance simulation mode, and describing a whole life cycle safe working area diagram.
A second aspect of the present application provides a maximum safe operating current testing apparatus of a hybrid inverter, comprising:
the aging simulation unit is used for simulating the aging thermal impedance of the target hybrid inverter by adopting a preset Foster thermal impedance equivalent model;
the junction temperature calculation unit is used for calculating the junction temperature of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance, wherein the junction temperature of the hybrid device comprises a MOSFET junction temperature and an IGBT junction temperature;
a current updating unit, configured to update the initial load current by using a dichotomy if the junction temperature of the hybrid device does not reach the highest junction temperature, so as to obtain an updated load current;
an iterative computation unit for replacing the initial load current with the updated load current and triggering the junction temperature computation unit;
and the impedance updating unit is used for judging whether the simulation of the ageing thermal impedance is finished in a traversing way if the junction temperature of the hybrid device reaches the highest junction temperature, if not, triggering the ageing simulation unit to update the ageing thermal impedance until the traversal is finished, and taking the current updated load current as the maximum safe running current.
Preferably, the junction temperature calculating unit is specifically configured to:
calculating the device loss of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance;
calculating a crusting temperature difference of a hybrid device in the target hybrid inverter based on the device loss;
and calculating the junction temperature of the hybrid device in the target hybrid inverter according to the junction temperature difference and the environment-related temperature, wherein the junction temperature of the hybrid device comprises a MOSFET junction temperature and an IGBT junction temperature.
Preferably, the current updating unit is specifically configured to:
configuring a value range of load current;
and if the junction temperature of the hybrid device does not reach the highest junction temperature, adopting a dichotomy to update the initial load current in the value range in a mode of taking the intermediate value to obtain the updated load current.
Preferably, the method further comprises:
and the safe working area depiction unit is used for acquiring the maximum safe running current in the full life cycle of the target hybrid inverter in an aging thermal impedance simulation mode and depicting a full life cycle safe working area graph.
A third aspect of the present application provides a maximum safe operating current testing apparatus for a hybrid inverter, the apparatus comprising a processor and a memory;
the memory is used for storing program codes and transmitting the program codes to the processor;
the processor is configured to execute the maximum safe operating current test method of the hybrid inverter according to the first aspect according to instructions in the program code.
A fourth aspect of the present application provides a computer readable storage medium storing program code for executing the maximum safe operating current test method of the hybrid inverter of the first aspect.
From the above technical solutions, the embodiment of the present application has the following advantages:
the application provides a maximum safe running current testing method of a hybrid inverter, which comprises the following steps: simulating the aging thermal impedance of the target hybrid inverter by adopting a preset Foster thermal impedance equivalent model; calculating the junction temperature of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance, wherein the junction temperature of the hybrid device comprises the junction temperature of a MOSFET and the junction temperature of an IGBT; if the junction temperature of the hybrid device does not reach the highest junction temperature, updating the initial load current by adopting a dichotomy method to obtain updated load current; replacing the initial load current with the updated load current, and returning to the step of calculating the junction temperature of the hybrid device in the target hybrid inverter according to the initial load current and the aged thermal impedance; if the junction temperature of the hybrid device reaches the highest junction temperature, judging whether the simulation of the aging thermal impedance is finished in a traversing way, if not, returning to the step of adopting a preset Foster thermal impedance equivalent model to simulate the aging thermal impedance of the target hybrid inverter, updating the aging thermal impedance until the simulation is finished, and taking the current updated load current as the maximum safe running current.
According to the maximum safe operation current testing method for the hybrid inverter, provided by the application, the aging thermal impedance of the hybrid inverter in the whole life cycle can be simulated through the preset Foster thermal impedance equivalent model, the junction temperature of the hybrid device is calculated based on different updated load currents under different aging degrees, the maximum safe operation current under different aging degrees is found by taking the highest junction temperature as a boundary, and the obtained current value is ensured to be suitable for the hybrid inverter in the whole life cycle, so that the operation reliability of the hybrid inverter is ensured. Therefore, the application can solve the technical problem that the running of the hybrid inverter lacks reliability because the fixed current value obtained by the existing experiment is not suitable for the full life cycle of the health change of the hybrid inverter.
Drawings
Fig. 1 is a flow chart of a maximum safe operation current testing method of a hybrid inverter according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a maximum safe running current testing device of a hybrid inverter according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a thermal impedance network model of a hybrid device according to an embodiment of the present application;
fig. 4 is a schematic diagram of junction temperature change of a hybrid device in an initial healthy state with an inverter operating current of 32.2A according to an embodiment of the present application;
FIG. 5 is a schematic diagram showing the junction temperature change of the hybrid device when the inverter is operated at 32.2A under 60% of the aging provided by the application example of the present application;
fig. 6 is a schematic diagram of a full life cycle safe operating area of a hybrid inverter according to an embodiment of the present application;
fig. 7 is a two-dimensional schematic diagram of a full life cycle safe working area of a hybrid inverter according to an embodiment of the present application;
fig. 8 is a schematic diagram of junction temperature of a hybrid device when an inverter in an unhealthy state is operated at point b according to an embodiment of the present application.
Detailed Description
In order to make the present application better understood by those skilled in the art, the following description will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
For easy understanding, referring to fig. 1, an embodiment of a method for testing a maximum safe operation current of a hybrid inverter according to the present application includes:
and step 101, adopting a preset Foster thermal impedance equivalent model to simulate the aging thermal impedance of the target hybrid inverter.
It should be noted that, the present embodiment simulates different aging states of the hybrid inverter by continuously changing the thermal impedance value. An increase in thermal impedance value of 50% is generally defined as a device failure criterion, which is consistent with the actual failure condition of the device. Therefore, in the embodiment, the full life cycle of the hybrid device is subjected to complete coverage test by increasing the increment of the heat resistance of the junction of the SiC MOSFET and the Si IGBT from 0 to 50%, junction temperature calculation is performed by combining a loss model of the hybrid device, and the test current when one of the SiC MOSFET and the Si IGBT reaches 150 ℃ which is the maximum limit value of the junction temperature at first is used as the maximum safe operation current.
The preset Foster thermal impedance equivalent model can be used for equivalent junction shell thermal impedance of the SiC MOSFET and the Si IGBT, namely ageing thermal impedance in the embodiment, and the specific expression is as follows:
；
；
wherein,、/>respectively SiC MOSFET and Si IGBTtTotal ageing thermal resistance at time,/-)>、/>Thermal resistance values of the ith order of SiC MOSFET and Si IGBT, respectively, +.>、/>Time constants of ith steps of SiC MOSFET and Si IGBT respectively, n is total stepA number.
And 102, calculating the junction temperature of the hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance, wherein the junction temperature of the hybrid device comprises the junction temperature of the MOSFET and the junction temperature of the IGBT.
Further, step 102 includes:
calculating the device loss of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance;
calculating a crusting temperature difference of a hybrid device in the target hybrid inverter based on the device loss;
and calculating the junction temperature of the hybrid device in the target hybrid inverter according to the junction temperature difference and the environment-related temperature, wherein the junction temperature of the hybrid device comprises the junction temperature of the MOSFET and the junction temperature of the IGBT.
It should be noted that, referring to fig. 3, the junction temperature of the hybrid device is calculated in real time, and the embodiment sets the initial load current of the inverter to beThe device loss of the hybrid device in the target hybrid inverter can be calculated according to the initial load current and the aging thermal impedance through the existing loss model and is expressed as +.>、/>The specific process will not be described in detail. Then, the junction temperature difference of the hybrid device can be calculated based on the obtained device loss, and the junction temperature difference also comprises a MOSFET junction temperature difference and an IGBT junction temperature difference, which are respectively expressed as:
；
；
wherein,for opening hybrid devicesThe off period, i.e. the switching period of SiC MOSFETs and Si IGBTs,、/>respectively representing the temperature difference between the crusts j-c of the kth switching period of the SiC MOSFET and the Si IGBT, namely the crusting temperature difference; />、/>Respectively representing the temperature difference between the k-1 switch period crust j-c of the SiC MOSFET and the Si IGBT, namely the crust temperature difference; />、/>The device loss corresponding to the kth switching period of the SiC MOSFET and the Si IGBT is obtained. According to the formula, the junction temperature difference of the hybrid device needs to be calculated by using the temperature difference of the previous switching period, the initial junction temperature difference in this embodiment +.>、/>All 0.
The ambient temperature of the present embodiment includes ambient temperatureAnd the temperature difference between the switch cycle shell and the environment c-a ∈ ->、/>Therefore, the junction temperature of the hybrid device is calculated by the following steps:
；
；
wherein,、/>junction temperatures corresponding to the SiC MOSFET and the Si IGBT respectively, namely junction temperatures of the hybrid device, and obtaining final steady-state junction temperature after iterative calculation>、/>。
And 103, if the junction temperature of the hybrid device does not reach the highest junction temperature, updating the initial load current by adopting a dichotomy method to obtain updated load current.
Further, step 103 includes:
configuring a value range of load current;
if the junction temperature of the hybrid device does not reach the highest junction temperature, adopting a dichotomy to update the initial load current in a mode of taking the intermediate value in the value range, and obtaining the updated load current.
Step 104, replacing the initial load current with the updated load current, and returning to step 102.
The load current value range of the embodiment is set asThe middle value of the value range can be used as the initial load current +.>. The highest junction temperature is 150 o C, if it is junction temperature of the hybrid device +.>、/>And if the highest junction temperature is not reached, updating the load current and continuing to test. The value range of the load current becomes +.>Boundary isOr->The intermediate value is then continued as update load current based on the dichotomy>The parameters of device loss, junction temperature, etc. are calculated up to +.>、/>There is->Equal to 150 o C, until the time of C. The updated load current obtained at this time is not necessarily the maximum safe operating current, and further, the subsequent updating of the aged thermal impedance is required.
And 105, if the junction temperature of the hybrid device reaches the highest junction temperature, judging whether the simulation of the ageing thermal impedance is finished in a traversing way, otherwise, returning to the step 101, updating the ageing thermal impedance until the traversal is finished, and taking the current updated load current as the maximum safe running current.
Maximum value in junction temperature of hybrid deviceReaching the highest junction temperature of 150 o C, judging whether the simulation of the aging thermal impedance is completed within the increment range of the crusting thermal resistance, namely, increasing from 0 to 50%, if so, stopping the laminationInstead, the current updated load current is the maximum safe operating current; if not, continuing to simulate new aging thermal impedance and performing subsequent calculation until the junction temperature of the hybrid device reaches the highest junction temperature and the aging thermal impedance simulation traversal is finished, recording if the k switch period stops iterating, and obtaining the maximum safe running current as +.>。
Further, step 105, further includes:
and obtaining the maximum safe operation current of the target hybrid inverter in the whole life cycle in an aging thermal impedance simulation mode, and describing a whole life cycle safe working area diagram.
The aging state of the full life cycle of the hybrid inverter is simulated by continuously updating the aging thermal impedance through a preset Foster thermal impedance equivalent model, the maximum safe operation current of the inverter is continuously searched, and a full life cycle safe working area diagram of the hybrid inverter can be drawn according to the obtained maximum safe operation current data after traversal is finished.
For ease of understanding, this embodiment provides a simulation application example employing single-phase inverter devices of the type selected from 1200V/25A Si IGBTs (IGW 25N120H 3) and 1200V/12.5A SiC MOSFETs (C2M 0160120D). Referring to fig. 4 and 5, the conventional method experimentally measured the maximum safe operating current of the inverter to be 32.2A in the initial healthy state of the hybrid device, and considered that the current remained unchanged over the entire life cycle of the device. The junction temperature of each device was measured for inverter operation at 32.2A current with the hybrid device initially healthy and aged 60%, respectively. Analysis shows that the junction temperature of the SiC MOSFET is close to 150 ℃ under the condition of the load current of 32.2A, and the junction temperature of the SiC MOSFET in the later aging period exceeds 150 ℃ to limit the junction temperature, so that the risk of thermal failure exists. The result shows that the maximum safe operation current of the inverter obtained by the traditional method has reference significance only in the health state of the hybrid device, and if the current is still adopted to guide the operation of the inverter in the later period of device aging, the device is extremely likely to overheat, and the reliability of the operation of the inverter is reduced.
Referring to fig. 6, a full life cycle safe operating area diagram of the hybrid inverter obtained in this embodiment can be seen that the maximum load current that the inverter can bear decreases with the increase of the aging degree of the SiC MOSFET, but is less affected by the aging degree of the Si IGBT. In order to analyze the influence of the aging degree of the SiC MOSFET on the safe working area, the thermal resistance of the Si IGBT is set to be a fixed value, and the three-dimensional safe working area of the inverter is mapped in two dimensions. The normalized value of the thermal resistance of the Si IGBT is fixedR th_IGBT Normalized thermal resistance value for 1, siC MOSFETR th_MOS From 1 to 1.5 times to facilitate observation of the safe operating boundary change of the hybrid device from the initial healthy state to the fully aged state.
Obvious inflection points appear due to the increase rate of the thermal impedance of the device in the whole life cycle: the thermal resistance increment is 0-0.5% in a linear growth stage, and the device is in a healthy state at the moment; the increment of 0.5% -50% is the accelerated aging stage, and the devices in the interval are in an unhealthy state. Therefore, the safety operation region is segmented with the inflection point of 0.5% increase in thermal resistance, and the result is shown in fig. 7. Wherein the lower part of the dotted line indicates that the device is in a healthy state, and the maximum safe operation current of the inverter is 32.3A which is the same as the result obtained by the traditional method; the devices above the red line are in an unhealthy state, the safe operating area of the inverter is continuously contracted, and the maximum safe operating current is finally below 30A. Working points a and b in healthy and unhealthy states are selected respectively to verify the actual effect of the safety working area covering the whole life cycle of the hybrid device, which is carved by the method of the embodiment.
Since the current magnitude at the a-operating point is the same as that in the conventional method, the hybrid junction temperature and fig. 4 are the same when the inverter operates at the a-point. In the non-healthy state of the hybrid device, when the inverter is operated at the boundary b point (30.5A) of the safe operating area, the junction temperature of the hybrid device is shown in fig. 8. At this time, the junction temperature of the SiC MOSFET is close to 150 ℃, which indicates that the load current corresponding to the point b is the maximum safe running current of the inverter under the unhealthy state of the hybrid device. Through verification, the full life cycle safety working area of the hybrid inverter described by the method can accurately describe the maximum safety operation current of the inverter under different ageing degrees of the hybrid device, and the operation reliability of the inverter is ensured in the full life cycle of the hybrid device.
According to the maximum safe operation current testing method for the hybrid inverter, provided by the embodiment of the application, the aging thermal impedance of the hybrid inverter in the whole life cycle can be simulated through the preset Foster thermal impedance equivalent model, the junction temperature of the hybrid device is calculated based on different updated load currents under different aging degrees, the maximum safe operation current under different aging degrees is found by taking the highest junction temperature as a boundary, and the obtained current value is ensured to be suitable for the hybrid inverter in the whole life cycle, so that the operation reliability of the hybrid inverter is ensured. Therefore, the embodiment of the application can solve the technical problem that the running of the hybrid inverter lacks reliability because the fixed current value obtained by the existing experiment is not suitable for the full life cycle of the health change of the hybrid inverter.
For ease of understanding, referring to fig. 2, the present application provides an embodiment of a maximum safe operation current testing apparatus for a hybrid inverter, including:
an aging simulation unit 201, configured to simulate an aging thermal impedance of the target hybrid inverter by using a preset Foster thermal impedance equivalent model;
a junction temperature calculation unit 202, configured to calculate a junction temperature of a hybrid device in the target hybrid inverter according to the initial load current and the aged thermal impedance, where the junction temperature of the hybrid device includes a MOSFET junction temperature and an IGBT junction temperature;
a current updating unit 203, configured to update the initial load current by using a dichotomy if the junction temperature of the hybrid device does not reach the highest junction temperature, so as to obtain an updated load current;
an iterative calculation unit 204 for replacing the initial load current with the updated load current and triggering the junction temperature calculation unit;
and the impedance updating unit 205 is configured to determine whether the simulation of the aging thermal impedance is completed if the junction temperature of the hybrid device reaches the highest junction temperature, and if not, trigger the aging simulation unit to update the aging thermal impedance until the simulation is completed, and take the current updated load current as the maximum safe operation current.
Further, the junction temperature calculating unit 202 is specifically configured to:
calculating the device loss of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance;
calculating a crusting temperature difference of a hybrid device in the target hybrid inverter based on the device loss;
and calculating the junction temperature of the hybrid device in the target hybrid inverter according to the junction temperature difference and the environment-related temperature, wherein the junction temperature of the hybrid device comprises the junction temperature of the MOSFET and the junction temperature of the IGBT.
Further, the current updating unit 203 is specifically configured to:
configuring a value range of load current;
if the junction temperature of the hybrid device does not reach the highest junction temperature, adopting a dichotomy to update the initial load current in a mode of taking the intermediate value in the value range, and obtaining the updated load current.
Further, the method further comprises the following steps:
the safe working area depiction unit 206 is configured to obtain the maximum safe running current in the full life cycle of the target hybrid inverter by means of aging thermal impedance simulation, and to depict a full life cycle safe working area graph.
The application also provides maximum safe running current testing equipment of the hybrid inverter, which comprises a processor and a memory;
the memory is used for storing the program codes and transmitting the program codes to the processor;
the processor is configured to execute the maximum safe operating current test method of the hybrid inverter in the method embodiment described above according to instructions in the program code.
The application also provides a computer readable storage medium for storing program code for executing the maximum safe running current testing method of the hybrid inverter in the method embodiment.
In the several embodiments provided by the present application, it should be understood that the disclosed apparatus and method may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of the units is merely a logical function division, and there may be additional divisions when actually implemented, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present application may be embodied in essence or a part contributing to the prior art or all or part of the technical solution in the form of a software product stored in a storage medium, comprising several instructions for executing all or part of the steps of the method according to the embodiments of the present application by means of a computer device (which may be a personal computer, a server, or a network device, etc.). And the aforementioned storage medium includes: u disk, mobile hard disk, read-Only Memory (ROM), random access Memory (Random Access Memory, RAM), magnetic disk or optical disk, etc.
The above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims (10)
1. A method for testing maximum safe operating current of a hybrid inverter, comprising:
simulating the aging thermal impedance of the target hybrid inverter by adopting a preset Foster thermal impedance equivalent model;
calculating the junction temperature of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance, wherein the junction temperature of the hybrid device comprises a MOSFET junction temperature and an IGBT junction temperature;
if the junction temperature of the hybrid device does not reach the highest junction temperature, updating the initial load current by adopting a dichotomy to obtain updated load current;
replacing the initial load current with the updated load current, and returning to the step of calculating a junction temperature of the hybrid device in the target hybrid inverter according to the initial load current and the aged thermal impedance;
if the junction temperature of the hybrid device reaches the highest junction temperature, judging whether the simulation of the ageing thermal impedance is finished in a traversing way, if not, returning to the step of adopting a preset Foster thermal impedance equivalent model to simulate the ageing thermal impedance of the target hybrid inverter, updating the ageing thermal impedance until the simulation is finished, and taking the current updated load current as the maximum safe running current.
2. The method of claim 1, wherein calculating a hybrid junction temperature of the hybrid device in the target hybrid inverter based on the initial load current and the aged thermal impedance, the hybrid junction temperature including a MOSFET junction temperature and an IGBT junction temperature, comprises:
calculating the device loss of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance;
calculating a crusting temperature difference of a hybrid device in the target hybrid inverter based on the device loss;
and calculating the junction temperature of the hybrid device in the target hybrid inverter according to the junction temperature difference and the environment-related temperature, wherein the junction temperature of the hybrid device comprises a MOSFET junction temperature and an IGBT junction temperature.
3. The method for testing the maximum safe operation current of the hybrid inverter according to claim 1, wherein if the junction temperature of the hybrid device does not reach the highest junction temperature, updating the initial load current by a dichotomy to obtain an updated load current, comprising:
configuring a value range of load current;
and if the junction temperature of the hybrid device does not reach the highest junction temperature, adopting a dichotomy to update the initial load current in the value range in a mode of taking the intermediate value to obtain the updated load current.
4. The method for testing the maximum safe operation current of the hybrid inverter according to claim 1, wherein if the junction temperature of the hybrid device reaches the highest junction temperature, determining whether the simulation of the aging thermal impedance is completed, if not, returning to the step of simulating the aging thermal impedance of the target hybrid inverter by using the preset Foster thermal impedance equivalent model, updating the aging thermal impedance until the completion of the simulation, and taking the current updated load current as the maximum safe operation current, and further comprising:
and obtaining the maximum safe running current in the whole life cycle of the target hybrid inverter in an aging thermal impedance simulation mode, and describing a whole life cycle safe working area diagram.
5. A maximum safe operating current testing device of a hybrid inverter, comprising:
the aging simulation unit is used for simulating the aging thermal impedance of the target hybrid inverter by adopting a preset Foster thermal impedance equivalent model;
the junction temperature calculation unit is used for calculating the junction temperature of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance, wherein the junction temperature of the hybrid device comprises a MOSFET junction temperature and an IGBT junction temperature;
a current updating unit, configured to update the initial load current by using a dichotomy if the junction temperature of the hybrid device does not reach the highest junction temperature, so as to obtain an updated load current;
an iterative computation unit for replacing the initial load current with the updated load current and triggering the junction temperature computation unit;
and the impedance updating unit is used for judging whether the simulation of the ageing thermal impedance is finished in a traversing way if the junction temperature of the hybrid device reaches the highest junction temperature, if not, triggering the ageing simulation unit to update the ageing thermal impedance until the traversal is finished, and taking the current updated load current as the maximum safe running current.
6. The maximum safe operating current testing device of a hybrid inverter according to claim 5, wherein the junction temperature calculating unit is specifically configured to:
calculating the device loss of a hybrid device in the target hybrid inverter according to the initial load current and the ageing thermal impedance;
calculating a crusting temperature difference of a hybrid device in the target hybrid inverter based on the device loss;
and calculating the junction temperature of the hybrid device in the target hybrid inverter according to the junction temperature difference and the environment-related temperature, wherein the junction temperature of the hybrid device comprises a MOSFET junction temperature and an IGBT junction temperature.
7. The maximum safe operating current testing device of a hybrid inverter according to claim 5, wherein the current updating unit is specifically configured to:
configuring a value range of load current;
and if the junction temperature of the hybrid device does not reach the highest junction temperature, adopting a dichotomy to update the initial load current in the value range in a mode of taking the intermediate value to obtain the updated load current.
8. The maximum safe operating current testing device of a hybrid inverter according to claim 5, further comprising:
and the safe working area depiction unit is used for acquiring the maximum safe running current in the full life cycle of the target hybrid inverter in an aging thermal impedance simulation mode and depicting a full life cycle safe working area graph.
9. A maximum safe operating current test apparatus for a hybrid inverter, the apparatus comprising a processor and a memory;
the memory is used for storing program codes and transmitting the program codes to the processor;
the processor is configured to execute the maximum safe operating current test method of the hybrid inverter of any one of claims 1-4 according to instructions in the program code.
10. A computer readable storage medium for storing program code for performing the maximum safe operating current test method of a hybrid inverter of any one of claims 1-4.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118013908A (en) * | 2024-04-10 | 2024-05-10 | 湖南大学 | Si/SiC hybrid device model selection and performance evaluation method considering multiple regulation parameters |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060071860A1 (en) * | 2004-10-04 | 2006-04-06 | Hiroshi Hozoji | Inverter and vehicle drive unit using the same |
| JP2010193714A (en) * | 2010-05-31 | 2010-09-02 | Hitachi Automotive Systems Ltd | Inverter device and vehicle-driving apparatus using the inverter device |
| US20110133790A1 (en) * | 2009-12-07 | 2011-06-09 | Denso Corporation | Device for driving switching elements |
| US20160191021A1 (en) * | 2014-07-24 | 2016-06-30 | Eaton Corporation | Methods and systems for operating hybrid power devices using driver circuits that perform indirect instantaneous load current sensing |
| CN107078732A (en) * | 2014-07-24 | 2017-08-18 | 伊顿公司 | The method and system of switch mode operation combined power device is determined using multiple electric currents |
-
2023
- 2023-10-30 CN CN202311413387.9A patent/CN117169637A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060071860A1 (en) * | 2004-10-04 | 2006-04-06 | Hiroshi Hozoji | Inverter and vehicle drive unit using the same |
| US20110133790A1 (en) * | 2009-12-07 | 2011-06-09 | Denso Corporation | Device for driving switching elements |
| JP2010193714A (en) * | 2010-05-31 | 2010-09-02 | Hitachi Automotive Systems Ltd | Inverter device and vehicle-driving apparatus using the inverter device |
| US20160191021A1 (en) * | 2014-07-24 | 2016-06-30 | Eaton Corporation | Methods and systems for operating hybrid power devices using driver circuits that perform indirect instantaneous load current sensing |
| CN106716832A (en) * | 2014-07-24 | 2017-05-24 | 伊顿公司 | Methods and systems for operating hybrid power devices using driver circuits that perform indirect instantaneous load current sensing |
| CN107078732A (en) * | 2014-07-24 | 2017-08-18 | 伊顿公司 | The method and system of switch mode operation combined power device is determined using multiple electric currents |
Non-Patent Citations (1)
| Title |
|---|
| 涂春鸣 等: "面向Si／SiC混合器件逆变器全寿命周期安全工作区的多开关模式主动切换策略", 电力自动化设备, vol. 43, no. 10, pages 129 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118013908A (en) * | 2024-04-10 | 2024-05-10 | 湖南大学 | Si/SiC hybrid device model selection and performance evaluation method considering multiple regulation parameters |
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