CN117169173A - Photoluminescence testing device for epitaxial wafer and working method thereof - Google Patents
Photoluminescence testing device for epitaxial wafer and working method thereof Download PDFInfo
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- CN117169173A CN117169173A CN202311316823.0A CN202311316823A CN117169173A CN 117169173 A CN117169173 A CN 117169173A CN 202311316823 A CN202311316823 A CN 202311316823A CN 117169173 A CN117169173 A CN 117169173A
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- 238000005424 photoluminescence Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000001228 spectrum Methods 0.000 claims abstract description 57
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- 239000010439 graphite Substances 0.000 claims description 4
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- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
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- 239000000758 substrate Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 229910005542 GaSb Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
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- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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Abstract
The invention provides an epitaxial wafer photoluminescence testing device and a working method thereof, wherein the epitaxial wafer photoluminescence testing device comprises: a light emitting structure; a rotary support base; the bearing platform is positioned on the rotary supporting seat, the bearing surface of the bearing platform is vertical to the plane where the rotary supporting seat is positioned, a fixed shaft penetrating through the bearing platform is arranged in the bearing platform, and the fixed shaft is fixedly connected with the rotary supporting seat; the object carrying tray is positioned on the carrying surface of the carrying platform and is suitable for carrying the epitaxial wafer, and the surface of one side of the epitaxial wafer, which is away from the carrying platform, receives the light emitted by the light emitting structure; and the spectrum analyzer is used for collecting information and outputting information of light emitted by the side surface of the epitaxial wafer. The photoluminescence testing device for the epitaxial wafer is simple in structure and accurate in testing.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer photoluminescence testing device and a working method thereof.
Background
Photoluminescence of an epitaxial wafer refers to excitation of a quantum well semiconductor material by photons with energy higher than the band gap energy of the quantum well semiconductor material in the epitaxial wafer, so that the quantum well semiconductor material is in an excited state, and electrons and holes are formed in the top of a conduction band and the bottom of a valence band respectively. And a process of recombining the excited electron and the hole to release the photon. Photoluminescence testing is an important means for characterizing epitaxial growth characteristics of semiconductor lasers, and is generally used for analyzing gain spectra of quantum wells to obtain key information such as peak wavelength and quantum well quality. At present, photoluminescence analysis is generally carried out on an epitaxial growth chip by adopting a photoluminescence rapid spectrometer, an epitaxial wafer is placed on a room-temperature object carrying tray, excitation light is normally incident from the upper part of the epitaxial wafer, and meanwhile, signal collection is carried out at the upper part, so that two main problems exist in the mode: (1) Quantum wells are a temperature sensitive semiconductor structure that cannot be studied for photoluminescence properties at higher or lower temperatures; (2) For some semiconductor lasers with special epitaxial structures, such as vertical external cavity surface emitting semiconductor lasers, a semiconductor air interface at the top of an epitaxial wafer and a Bragg reflector at the bottom of the epitaxial wafer form a Fabry-Perot microcavity, so that a Fabry-Perot interference filter effect is introduced, the effect can generate a spectrum modulation effect on the intrinsic material gain of a quantum well, at the moment, the photoluminescence spectrum emitted by the chip, which is measured from the normal direction of the surface of the chip by adopting the method, is the spectrum subjected to interference modulation, larger errors can be generated, and the growth characteristics such as wavelength, intensity and the like of the quantum well can not be reflected correctly. In order to solve the problem, the invention provides an epitaxial wafer photoluminescence test device and a working method thereof.
Disclosure of Invention
Therefore, the invention aims to solve the technical problem of inaccurate test of the photoluminescence test device of the epitaxial wafer in the prior art, thereby providing the photoluminescence test device of the epitaxial wafer and the working method thereof.
The invention provides a photoluminescence testing device for an epitaxial wafer, which comprises: a light emitting structure; a rotary support base; the bearing platform is positioned on the rotary supporting seat, the bearing surface of the bearing platform is perpendicular to the plane where the rotary supporting seat is positioned, a fixed shaft penetrating through the bearing platform is arranged in the bearing platform, and the fixed shaft is fixedly connected with the rotary supporting seat; the carrier tray is positioned on the bearing surface of the bearing platform and is suitable for bearing the epitaxial wafer, and one side surface of the epitaxial wafer, which is away from the bearing platform, receives the light emitted by the light-emitting structure; and the spectrum analyzer is used for collecting information and outputting information of light emitted by the side surface of the epitaxial wafer.
Optionally, the method further comprises: and the temperature control unit is positioned between the bearing platform and the carrying tray.
Optionally, a heat-conducting medium layer is arranged between the temperature control unit and the carrying tray, and the material of the heat-conducting medium layer comprises heat-conducting silicone grease, indium, graphite or graphene.
Optionally, the rotatable support base is rotatable about the fixed axis by an angle of 0-360 °.
Optionally, the method further comprises: the first focusing unit is positioned in the light path from the light emitting structure to the epitaxial wafer, a first focus of the first focusing unit is positioned on the surface of one side, deviating from the object carrying tray, of the epitaxial wafer, the first focusing unit comprises a first collimating mirror and a first focusing mirror, and the first collimating mirror is positioned in the light path between the first focusing mirror and the light emitting structure.
Optionally, the method further comprises: the second collimating and focusing unit is positioned in the light path from the epitaxial wafer to the spectrum analyzer, the first focus of the second collimating and focusing unit is positioned on the side face of the epitaxial wafer, the second collimating and focusing unit comprises a second collimating mirror and a second focusing mirror, and the second collimating mirror is positioned in the light path between the epitaxial wafer and the second focusing mirror.
Optionally, the method further comprises: the first optical fiber is positioned in the light path from the light emitting structure to the first collimating and focusing unit, the emission port of the first optical fiber is positioned at the second focus of the first collimating and focusing unit, and the receiving port of the first optical fiber is connected with the light outlet of the light emitting structure.
Optionally, the method further comprises: the second optical fiber is positioned in the optical paths of the second collimation focusing unit and the spectrum analyzer, the receiving port of the second optical fiber is positioned at the second focus of the second collimation focusing unit, and the transmitting port of the second optical fiber is connected with the spectrum analyzer.
The invention also provides a working method of the epitaxial wafer photoluminescence testing device, which comprises the following steps: controlling the light-emitting structure to emit light to the surface of one side of the epitaxial wafer, which is away from the bearing platform, so that the epitaxial wafer emits light; and the spectrum analyzer is used for collecting information and outputting information of light emitted by the side surface of the epitaxial wafer.
Optionally, before the spectrum analyzer collects information and outputs information on the light emitted from the side surface of the epitaxial wafer, the spectrum analyzer includes: and rotating the rotary supporting seat to enable the normal line of the epitaxial wafer and the light transmitted to the spectrum analyzer from the side surface of the epitaxial wafer to form a first angle.
Optionally, the first angle is 0-150 °.
Optionally, the epitaxial wafer photoluminescence testing device further comprises: the temperature control unit is positioned between the bearing platform and the carrying tray; the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: before the spectrum analyzer collects information and outputs information of light emitted by the side face of the epitaxial wafer, the temperature of the temperature control unit is adjusted.
Optionally, the epitaxial wafer photoluminescence testing device further comprises: and a heat conducting medium layer is arranged between the temperature control unit and the carrying tray.
Optionally, the epitaxial wafer photoluminescence testing device further comprises: the second collimating and focusing unit is positioned in the optical path from the epitaxial wafer to the spectrum analyzer, a first focus of the second collimating and focusing unit is positioned on the side surface of the epitaxial wafer, the second collimating and focusing unit comprises a second collimating mirror and a second focusing mirror, and the second collimating mirror is positioned in the optical path between the epitaxial wafer and the second focusing mirror; the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: and before the spectrum analyzer collects information and outputs information on the light emitted by the side surface of the epitaxial wafer, the second collimation and focusing unit is adopted to collimate and focus the light emitted by the side surface of the epitaxial wafer.
Optionally, the epitaxial wafer photoluminescence testing device further comprises: the second optical fiber is positioned in the optical paths of the second collimation focusing unit and the spectrum analyzer, the receiving port of the second optical fiber is positioned at the second focus of the second collimation focusing unit, and the transmitting port of the second optical fiber is connected with the spectrum analyzer; the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: and before the spectrum analyzer collects information and outputs information on light emitted by the side surface of the epitaxial wafer, the second optical fiber is adopted to transmit the light after the second collimation and focusing unit performs collimation and focusing to the spectrum analyzer.
Optionally, the epitaxial wafer photoluminescence testing device further comprises: the first focusing unit is positioned in the light path from the light emitting structure to the epitaxial wafer, a first focus of the first focusing unit is positioned on the surface of one side of the epitaxial wafer, which is away from the object carrying tray, and the first focusing unit comprises a first collimating mirror and a first focusing mirror, and the first collimating mirror is positioned in the light path between the first focusing mirror and the light emitting structure; the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: and controlling the light emitting structure to emit light to the surface of one side of the epitaxial wafer, which is away from the bearing platform, so that the epitaxial wafer emits light, and adopting the first collimating focusing unit to expand and collimate the light emitted by the light emitting structure.
Optionally, the epitaxial wafer photoluminescence testing device further comprises: the first optical fiber is positioned in the optical path from the light emitting structure to the first collimating and focusing unit, the emission port of the first optical fiber is positioned at the second focus of the first collimating and focusing unit, and the receiving port of the first optical fiber is connected with the light outlet of the light emitting structure; the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: and controlling the light emitted by the light-emitting structure to the surface of one side of the epitaxial wafer, which is away from the bearing platform, so that the epitaxial wafer emits light, and transmitting the light emitted by the light-emitting structure to the first collimating focusing unit by adopting the first optical fiber.
The technical scheme of the invention has the following beneficial effects:
the invention provides an epitaxial wafer photoluminescence testing device, which comprises: a light emitting structure; a rotary support base; the bearing platform is positioned on the rotary supporting seat, the bearing surface of the bearing platform is perpendicular to the plane where the rotary supporting seat is positioned, a fixed shaft penetrating through the bearing platform is arranged in the bearing platform, and the fixed shaft is fixedly connected with the rotary supporting seat; the object carrying tray is positioned on the carrying surface of the carrying platform and is suitable for carrying the epitaxial wafer, and the surface of one side of the epitaxial wafer, which is away from the carrying platform, receives the light emitted by the light emitting structure; and the spectrum analyzer is used for collecting information and outputting information of light emitted by the side surface of the epitaxial wafer. Because the light that spectrum analyzer gathered is the light that sends from the side of epitaxial wafer, the light that epitaxial wafer received is located the epitaxial wafer and deviates from the one side surface of loading platform, there is the contained angle between the light that consequently gathers and epitaxial wafer received, can avoid the light that gathers to take place fabry perot interference effect in the inside of epitaxial wafer like this, avoid the light that gathers to make the test structure error for the light after carrying out interference modulation in the epitaxial wafer, and rotatory supporting seat can rotate, spectrum analyzer can carry out information acquisition and information output to the light of arbitrary angle that the epitaxial wafer sent. Therefore, the photoluminescence testing device for the epitaxial wafer has a simple structure and is accurate in testing.
Further, the method further comprises the following steps: and the temperature control unit is positioned between the bearing platform and the carrying tray. The temperature control unit can realize temperature adjustment on the epitaxial wafer, so that the light-emitting spectrum of the epitaxial wafer at different temperatures can be obtained.
Further, a heat-conducting medium layer is arranged between the temperature control unit and the carrying tray, and the material of the heat-conducting medium layer comprises heat-conducting silicone grease, indium, graphite or graphene. The heat conducting medium layer can transfer the temperature of the temperature control unit to the epitaxial wafer, so that the temperature of the epitaxial wafer is the temperature set by the temperature control unit, and the accuracy of the photoluminescence test device of the epitaxial wafer is improved.
Further, the rotatable support base is rotatable around the fixed shaft by an angle of 0-360 degrees. Therefore, the information acquisition and the information output can be carried out on the light emitted by any plane of the epitaxial wafer at any angle.
Further, the method further comprises the following steps: the first focusing unit is positioned in the light path from the light emitting structure to the epitaxial wafer, a first focus of the first focusing unit is positioned on the surface of one side, deviating from the object carrying tray, of the epitaxial wafer, the first focusing unit comprises a first collimating mirror and a first focusing mirror, and the first collimating mirror is positioned in the light path between the first focusing mirror and the light emitting structure. Thus being beneficial to aligning the luminous points on the epitaxial wafer and improving the efficiency.
Further, the second collimating and focusing unit is positioned in the light path from the epitaxial wafer to the spectrum analyzer, the first focus of the second collimating and focusing unit is positioned on the side surface of the epitaxial wafer, the second collimating and focusing unit comprises a second collimating mirror and a second focusing mirror, and the second collimating mirror is positioned in the light path between the epitaxial wafer and the second focusing mirror. Thus being beneficial to aligning the luminous points on the epitaxial wafer and improving the efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an epitaxial wafer photoluminescence test apparatus according to an embodiment of the present invention;
fig. 2 is a flowchart of an operation method of the photoluminescence testing device for an epitaxial wafer according to an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The invention provides a photoluminescence testing device for an epitaxial wafer, referring to fig. 1, comprising:
a light emitting structure 1;
a rotary support base 2;
the bearing platform 3 is positioned on the rotary supporting seat 2, the bearing surface of the bearing platform 3 is vertical to the plane where the rotary supporting seat 2 is positioned, a fixed shaft penetrating through the bearing platform 3 is arranged in the bearing platform 3, and the fixed shaft is fixedly connected with the rotary supporting seat 2;
the carrying tray 4 is positioned on the carrying surface of the carrying platform 3, the carrying tray 4 is suitable for carrying the epitaxial wafer 5, and the surface of one side of the epitaxial wafer 5, which is away from the carrying platform 3, receives the light emitted by the light-emitting structure 1;
and the spectrum analyzer 6 is used for collecting and outputting information of the light emitted by the side surface of the epitaxial wafer 5.
According to the photoluminescence testing device for the epitaxial wafer, as the light collected by the spectrum analyzer is the light emitted from the side face of the epitaxial wafer, the light received by the epitaxial wafer is located on the surface of one side of the epitaxial wafer, which is away from the bearing platform, an included angle exists between the collected light and the light received by the epitaxial wafer, so that the Fabry-Perot interference effect of the collected light in the epitaxial wafer can be avoided, the collected light is the light subjected to interference modulation in the epitaxial wafer, the rotating support seat can rotate, and the spectrum analyzer can collect information and output information of the light emitted by the epitaxial wafer at any angle. Therefore, the photoluminescence testing device for the epitaxial wafer has a simple structure and is accurate in testing.
In one embodiment, the content of the spectrum analyzer 6 for information collection of the light emitted from the side of the epitaxial wafer 5 includes: the wavelength of the light, the intensity of the light, and the bandwidth of the light may also include other optical information. The spectrum analyzer 6 performs information acquisition and information output on the light emitted by the side surface of the epitaxial wafer 5, and the process is controlled by a program autonomously, so that the spectrum analyzer has high-speed reading characteristics and improves the detection efficiency.
In one embodiment, epitaxial wafer 5 comprises: a vertical external cavity surface emitting semiconductor laser, the vertical external cavity surface emitting semiconductor laser comprising: a semiconductor substrate layer; a first Bragg reflector on the semiconductor substrate layer; a quantum well layer located on a side of the first Bragg reflector facing away from the semiconductor substrate layer; and a second Bragg reflector on a side of the quantum well layer facing away from the first Bragg reflector. Because the air of the surface area of the side, which is far away from the bearing platform, of the vertical external cavity surface emitting semiconductor laser can form a Fabry-Perot microcavity with the first Bragg reflector, and then the Fabry-Perot interference filtering effect is introduced, the effect can generate a spectral modulation effect on the intrinsic material gain of the quantum well layer, when the photoluminescence test device for the epitaxial wafer is used for carrying out photoluminescence test on the vertical external cavity surface emitting semiconductor laser, the surface of the side, which is far away from the semiconductor substrate layer, of the second Bragg reflector receives light emitted by the light emitting structure, the optical spectrum analyzer carries out information acquisition and information output on the light emitted by the side of the vertical external cavity surface emitting semiconductor laser, and the light acquired by the optical spectrum analyzer are both located on the side, which is far away from the semiconductor substrate layer, of the second Bragg reflector, so that the acquired light is the light subjected to the interference modulation, and the wavelength, the intensity and other growth characteristics of the quantum well layer can be improved, and the measurement error can be reduced.
In one embodiment, the epitaxial wafer 5 includes a semiconductor substrate layer, a quantum well layer located on one side of the semiconductor substrate layer, and when the carrier tray carries the epitaxial wafer, the quantum well layer is located on the side of the semiconductor substrate layer facing away from the carrier tray, and the material of the semiconductor substrate layer includes GaN, gaAs, inP or GaSb.
In one embodiment, the energy of the photons emitted by the light emitting structure 1 is higher than the energy value corresponding to the band gap width of the quantum well layer of the epitaxial wafer 5, and the energy of the photons emitted by the light emitting structure 1 is at least greater than 1 eV than the energy value corresponding to the band gap width of the quantum well layer of the epitaxial wafer 5.
In one embodiment, the light emitting structure 1 may be operated in a continuous or quasi-continuous operation state, the light emitting structure 1 comprising a pump laser.
In one embodiment, the epitaxial wafer photoluminescence test apparatus further comprises: and a temperature control unit 7 positioned between the bearing platform 3 and the carrying tray 4. The temperature control unit 7 can realize temperature adjustment on the epitaxial wafer 5, so that the light-emitting spectrum of the epitaxial wafer 5 at different temperatures can be obtained.
In one embodiment, a heat-conducting medium layer is arranged between the temperature control unit 7 and the carrying tray 4, and the material of the heat-conducting medium layer comprises heat-conducting silicone grease, indium, graphite or graphene.
In one embodiment, the rotary support 2 is rotatable about the fixed axis through an angle of 0-360 °. Therefore, the information acquisition and the information output can be carried out on the light emitted by any plane of the epitaxial wafer at any angle. The rotation angle of the rotary supporting seat can be controlled by a program or manually.
In one embodiment, the epitaxial wafer photoluminescence test apparatus further comprises: the first focusing unit 8 is located in the light path from the light emitting structure 1 to the epitaxial wafer 5, the first focus of the first focusing unit 8 is located on the surface of one side, away from the carrying tray 4, of the epitaxial wafer 5, the first focusing unit 8 comprises a first collimating mirror and a first focusing mirror, and the first collimating mirror is located in the light path between the first focusing mirror and the light emitting structure 1. Thus being beneficial to aligning the luminous points on the epitaxial wafer and improving the efficiency.
In one embodiment, the epitaxial wafer photoluminescence test apparatus further comprises: and the second collimating and focusing unit 9 is positioned in the optical path from the epitaxial wafer 5 to the spectrum analyzer 6, the first focus of the second collimating and focusing unit 9 is positioned on the side surface of the epitaxial wafer, the second collimating and focusing unit 9 comprises a second collimating mirror and a second focusing mirror, and the second collimating mirror is positioned in the optical path between the epitaxial wafer and the second focusing mirror. Thus being beneficial to aligning the luminous points on the epitaxial wafer and improving the efficiency.
In one embodiment, the epitaxial wafer photoluminescence test apparatus further comprises: the first optical fiber 10 is positioned in the optical path from the light emitting structure 1 to the first collimating and focusing unit 8, the emission port of the first optical fiber 10 is positioned at the second focus of the first collimating and focusing unit 8, and the receiving port of the first optical fiber 10 is connected with the light outlet of the light emitting structure 1.
In one embodiment, the epitaxial wafer photoluminescence test apparatus further comprises: the second optical fiber 11 is positioned in the optical path of the second collimating and focusing unit 9 and the spectrum analyzer 6, the receiving port of the second optical fiber 11 is positioned at the second focus of the second collimating and focusing unit 9, and the transmitting port of the second optical fiber 11 is connected with the spectrum analyzer 6.
Another embodiment of the present invention provides a working method of an epitaxial wafer photoluminescence testing device, referring to fig. 2, including the following steps:
step S1: controlling the light-emitting structure to emit light to the surface of one side of the epitaxial wafer, which is away from the bearing platform, so that the epitaxial wafer emits light;
step S2: and the spectrum analyzer collects information and outputs the information of the light emitted by the side surface of the epitaxial wafer.
In step S1, in the process of controlling the light emitting structure to emit light to the surface of the side of the epitaxial wafer away from the carrying platform to make the epitaxial wafer emit light, the light emitted by the light emitting structure is transmitted to the first collimating and focusing unit by using the first optical fiber, and then the light emitted by the light emitting structure is expanded and collimated by using the first collimating and focusing unit, specifically, the light emitted by the first optical fiber is collimated by using the first collimating and focusing unit.
In one embodiment, before the spectrum analyzer performs information collection and information output on the light emitted from the side surface of the epitaxial wafer, the method comprises the following steps: and rotating the rotary supporting seat to enable the normal line of the epitaxial wafer and the light transmitted to the spectrum analyzer from the side surface of the epitaxial wafer to form a first angle. The normal line of the epitaxial wafer is perpendicular to the surface of one side of the epitaxial wafer, which is away from the bearing platform.
In one embodiment, the first angle is 0-150 °, such as 60 °, 90 °, or 120 °.
In one embodiment, the working method of the epitaxial wafer photoluminescence testing device further comprises the following steps: before the spectrum analyzer collects information and outputs information of light emitted from the side face of the epitaxial wafer, the temperature of the temperature control unit is adjusted.
In one embodiment, the working method of the epitaxial wafer photoluminescence testing device further comprises the following steps: and before the spectrum analyzer collects and outputs information of light emitted by the side surface of the epitaxial wafer, a second collimation and focusing unit is adopted to collimate and focus the light emitted by the side surface of the epitaxial wafer.
In one embodiment, the working method of the epitaxial wafer photoluminescence testing device further comprises the following steps: and before the spectrum analyzer collects information and outputs information on light emitted by the side surface of the epitaxial wafer, the second optical fiber is adopted to transmit the light after the second collimation and focusing unit performs collimation and focusing to the spectrum analyzer.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (17)
1. An epitaxial wafer photoluminescence test device, comprising:
a light emitting structure;
a rotary support base;
the bearing platform is positioned on the rotary supporting seat, the bearing surface of the bearing platform is perpendicular to the plane where the rotary supporting seat is positioned, a fixed shaft penetrating through the bearing platform is arranged in the bearing platform, and the fixed shaft is fixedly connected with the rotary supporting seat;
the carrier tray is positioned on the bearing surface of the bearing platform and is suitable for bearing the epitaxial wafer, and one side surface of the epitaxial wafer, which is away from the bearing platform, receives the light emitted by the light-emitting structure;
and the spectrum analyzer is used for collecting information and outputting information of light emitted by the side surface of the epitaxial wafer.
2. An epitaxial wafer photoluminescence test device according to claim 1, further comprising: and the temperature control unit is positioned between the bearing platform and the carrying tray.
3. The epitaxial wafer photoluminescence test device according to claim 2, wherein a heat conducting medium layer is arranged between the temperature control unit and the carrying tray, and the material of the heat conducting medium layer comprises heat conducting silicone grease, indium, graphite or graphene.
4. An epitaxial wafer photoluminescence test device according to claim 1, wherein the rotatable support base is rotatable about the fixed axis through an angle of 0-360 °.
5. An epitaxial wafer photoluminescence test device according to claim 1, further comprising: the first focusing unit is positioned in the light path from the light emitting structure to the epitaxial wafer, a first focus of the first focusing unit is positioned on the surface of one side, deviating from the object carrying tray, of the epitaxial wafer, the first focusing unit comprises a first collimating mirror and a first focusing mirror, and the first collimating mirror is positioned in the light path between the first focusing mirror and the light emitting structure.
6. An epitaxial wafer photoluminescence test device according to claim 1, further comprising: the second collimating and focusing unit is positioned in the light path from the epitaxial wafer to the spectrum analyzer, the first focus of the second collimating and focusing unit is positioned on the side face of the epitaxial wafer, the second collimating and focusing unit comprises a second collimating mirror and a second focusing mirror, and the second collimating mirror is positioned in the light path between the epitaxial wafer and the second focusing mirror.
7. An epitaxial wafer photoluminescence test device according to claim 5, further comprising: the first optical fiber is positioned in the light path from the light emitting structure to the first collimating and focusing unit, the emission port of the first optical fiber is positioned at the second focus of the first collimating and focusing unit, and the receiving port of the first optical fiber is connected with the light outlet of the light emitting structure.
8. An epitaxial wafer photoluminescence test device according to claim 6, further comprising: the second optical fiber is positioned in the optical paths of the second collimation focusing unit and the spectrum analyzer, the receiving port of the second optical fiber is positioned at the second focus of the second collimation focusing unit, and the transmitting port of the second optical fiber is connected with the spectrum analyzer.
9. A method of operating an epitaxial wafer photoluminescence test apparatus according to any one of claims 1 to 8, comprising:
controlling the light-emitting structure to emit light to the surface of one side of the epitaxial wafer, which is away from the bearing platform, so that the epitaxial wafer emits light;
and the spectrum analyzer is used for collecting information and outputting information of light emitted by the side surface of the epitaxial wafer.
10. The method of claim 9, wherein before the spectrum analyzer collects and outputs information of the light emitted from the side of the epitaxial wafer, the method comprises: and rotating the rotary supporting seat to enable the normal line of the epitaxial wafer and the light transmitted to the spectrum analyzer from the side surface of the epitaxial wafer to form a first angle.
11. A method of operating an epitaxial wafer photoluminescence test device according to claim 10, wherein the first angle is 0-150 °.
12. A method of operating an epitaxial wafer photoluminescence test device according to claim 9, wherein the epitaxial wafer photoluminescence test device further comprises: the temperature control unit is positioned between the bearing platform and the carrying tray;
the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: before the spectrum analyzer collects information and outputs information of light emitted by the side face of the epitaxial wafer, the temperature of the temperature control unit is adjusted.
13. A method of operating an epitaxial wafer photoluminescence test device according to claim 12, wherein the epitaxial wafer photoluminescence test device further comprises: and a heat conducting medium layer is arranged between the temperature control unit and the carrying tray.
14. A method of operating an epitaxial wafer photoluminescence test device according to claim 9, wherein the epitaxial wafer photoluminescence test device further comprises: the second collimating and focusing unit is positioned in the optical path from the epitaxial wafer to the spectrum analyzer, a first focus of the second collimating and focusing unit is positioned on the side surface of the epitaxial wafer, the second collimating and focusing unit comprises a second collimating mirror and a second focusing mirror, and the second collimating mirror is positioned in the optical path between the epitaxial wafer and the second focusing mirror;
the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: and before the spectrum analyzer collects information and outputs information on the light emitted by the side surface of the epitaxial wafer, the second collimation and focusing unit is adopted to collimate and focus the light emitted by the side surface of the epitaxial wafer.
15. A method of operating an epitaxial wafer photoluminescence test device according to claim 14, wherein the epitaxial wafer photoluminescence test device further comprises: the second optical fiber is positioned in the optical paths of the second collimation focusing unit and the spectrum analyzer, the receiving port of the second optical fiber is positioned at the second focus of the second collimation focusing unit, and the transmitting port of the second optical fiber is connected with the spectrum analyzer;
the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: and before the spectrum analyzer collects information and outputs information on light emitted by the side surface of the epitaxial wafer, the second optical fiber is adopted to transmit the light after the second collimation and focusing unit performs collimation and focusing to the spectrum analyzer.
16. A method of operating an epitaxial wafer photoluminescence test device according to claim 9, wherein the epitaxial wafer photoluminescence test device further comprises: the first focusing unit is positioned in the light path from the light emitting structure to the epitaxial wafer, a first focus of the first focusing unit is positioned on the surface of one side of the epitaxial wafer, which is away from the object carrying tray, and the first focusing unit comprises a first collimating mirror and a first focusing mirror, and the first collimating mirror is positioned in the light path between the first focusing mirror and the light emitting structure;
the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: and controlling the light emitting structure to emit light to the surface of one side of the epitaxial wafer, which is away from the bearing platform, so that the epitaxial wafer emits light, and adopting the first collimating focusing unit to expand and collimate the light emitted by the light emitting structure.
17. A method of operating an epitaxial wafer photoluminescence test device according to claim 16, wherein the epitaxial wafer photoluminescence test device further comprises: the first optical fiber is positioned in the optical path from the light emitting structure to the first collimating and focusing unit, the emission port of the first optical fiber is positioned at the second focus of the first collimating and focusing unit, and the receiving port of the first optical fiber is connected with the light outlet of the light emitting structure;
the working method of the photoluminescence testing device for the epitaxial wafer further comprises the following steps: and controlling the light emitted by the light-emitting structure to the surface of one side of the epitaxial wafer, which is away from the bearing platform, so that the epitaxial wafer emits light, and transmitting the light emitted by the light-emitting structure to the first collimating focusing unit by adopting the first optical fiber.
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