CN117166048A - Two-dimensional CuFeSe 2 Crystal material and crystal face controllable growth method thereof - Google Patents
Two-dimensional CuFeSe 2 Crystal material and crystal face controllable growth method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title abstract description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 56
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- 239000002178 crystalline material Substances 0.000 claims abstract description 31
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052742 iron Inorganic materials 0.000 claims abstract description 23
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention belongs to the field of nano semiconductor materials, and particularly discloses a two-dimensional CuFeSe 2 A crystal material and a crystal face controllable growth method thereof. The preparation method comprises the following steps: (1) Mixing iron powder and potassium iodide to be used as an iron source, and copper iodide to be used as a copper source; placing an iron source and a copper source in a quartz sleeve positioned at the downstream of the single-temperature zone tube furnace; (2) Placing a selenium source at the upstream of the single-temperature zone tube furnace, and carrying selenium vapor into the downstream of the single-temperature zone tube furnace by carrier gas to react with an iron source and a copper source; wherein, the two-dimensional CuFeSe with different crystal faces is prepared on the substrate by adjusting the furnace temperature to 600-700 ℃ and the heat preservation time to 360-450 s 2 Crystalline material. The material prepared by the method has high crystallization quality, single phase and good environmental stability, and simultaneously the method can realize two-dimensional CuFeSe by controlling the growth temperature 2 The crystal face of the crystal material can be controlled to grow.
Description
Technical Field
The invention belongs to the technical field of nano semiconductor materials, and particularly relates to a two-dimensional CuFeSe 2 A crystal material and a crystal face controllable growth method thereof.
Background
Two-dimensional magnetic materials by virtue of their excellent properties, such as tunnelingTrack Magnetoresistance (TMR) and spin-orbit torque effects have wide potential applications in spintronics devices, magnetic memory devices, logic circuits, and sensors. Among them, new physical phenomena such as valley manipulation, supercurrent, quantum Anomalous Hall Effect (AHE), etc. can be induced in the two-dimensional magnetic heterostructure due to the proximity effect of the two-dimensional magnetic material. In 2017, the existence of an intrinsic two-dimensional long-range magnetic order, namely a single-layer CrI, is proved for the first time experimentally 3 And double-layer Cr 2 Ge 2 Te 6 The discovery of intrinsic magnetic materials is rapidly leading to research enthusiasm for researchers.
To date, a large number of two-dimensional intrinsic ferromagnetic materials have been prepared by various methods, including mechanical lift-off, molecular beam epitaxy, chemical Vapor Deposition (CVD), and the like. The two-dimensional intrinsic magnetic materials reported at present are mostly van der Waals crystals, have lower dissociation energy and higher in-plane binding energy, and can obtain a few-layer or single-layer structure in a mechanical stripping mode, but the method has the defects of low production efficiency, poor controllability and the like. The expandability, crystallinity and atomic-level accurate thickness control of the two-dimensional intrinsic ferromagnetic material wafer size can be realized by molecular beam epitaxy, but the time consumption and mass productivity are poor, and the requirements on the surface flatness and vacuum condition of the substrate before growth are very high. The chemical vapor deposition method has the advantages of high production efficiency, high crystallization quality, large area, large domain size and the like, and has great prospect in the aspect of growing two-dimensional magnetic materials. Thus, more and more two-dimensional intrinsic ferromagnets are synthesized and reported by chemical vapor deposition methods, such as two-dimensional Cr 2 Te 3 Room temperature ferromagnetism and FeSe with tunable medium thickness 2 Abnormal magnetic resistance caused by low temperature phase transition in the nanoplatelets, and the like.
CuFeSe 2 Is a ternary chalcogenic crystal material with a non-lamellar structure, and is widely applied to the fields of biological imaging, photocatalysis, thermoelectricity and the like due to excellent physical properties such as low-temperature ferromagnetism, narrow band gap, gao Guangre conversion efficiency and the like. It was reported earlier that bulk CuFeSe 2 The crystal shows ferromagnetism below Curie temperature (70K), but because the ternary two-dimensional material is in the synthesis processThe precursor is unstable in supply, a plurality of side reactions and other difficulties exist, and the two-dimensional CuFeSe is not successfully synthesized at present 2 Nanosheets have been reported to hinder CuFeSe-based 2 Basic physical research and application development of crystalline materials.
Disclosure of Invention
In response to the above-described shortcomings or needs for improvement in the art, the present invention provides a two-dimensional CuFeSe 2 The preparation method mainly synthesizes high-quality, pure-phase and two-dimensional CuFeSe with different crystal faces by regulating and controlling the reaction of selenium vapor and a metal source in the limited area of a sleeve and the temperature 2 Crystalline material.
To achieve the above object, according to one aspect of the present invention, there is provided a two-dimensional CuFeSe 2 The crystal material and the crystal face controllable growth method thereof comprise the following steps:
(1) Mixing iron powder and potassium iodide to be used as an iron source, and copper iodide to be used as a copper source; placing the iron source and the copper source in a quartz sleeve downstream of a single temperature zone tube furnace;
(2) Placing a selenium source at the upstream of a single-temperature-zone tubular furnace, and carrying selenium vapor into the downstream of the single-temperature-zone tubular furnace by carrier gas to react with the iron source and the copper source; wherein, the two-dimensional CuFeSe with different crystal faces is prepared on the substrate by adjusting the furnace temperature to 600-700 ℃ and the heat preservation time to 360-450 s 2 Crystalline material.
As the preferable mode of the invention, the pipe orifice of the quartz sleeve faces to the upstream direction of the single-temperature-zone tubular furnace, the pipe tail of the quartz sleeve is positioned at the downstream of the tubular furnace, and the position of the pipe tail is 13 cm-15 cm away from the center of the single-temperature-zone tubular furnace.
Preferably, the selenium source is located upstream of the tube furnace and is located at a distance of 14cm to 16cm from the center of the tube furnace.
As the preference of the invention, two-dimensional CuFeSe with different crystal faces can be prepared on the substrate by adjusting the furnace temperature 2 The crystal material specifically comprises:
the furnace temperature is increased from 600 ℃ to 700 ℃, the two-dimensional CuFeSe 2 Crystal face of crystalline material is from (100) The face gradually changes into a (221) face.
In the preferred embodiment of the present invention, in the step (1), the mass ratio of the copper iodide, the iron powder, and the potassium iodide is (8 to 16) 4:1.
Preferably, the pressure in the tube furnace is normal pressure.
Preferably, the substrate is a fluorine crystal mica sheet; the iron source and the copper source are separately placed within the quartz sleeve, and the substrate is placed over the iron source.
Preferably, the carrier gas is argon and hydrogen, the flow rate of the argon is 90sccm to 110sccm, and the flow rate of the hydrogen is 4sccm to 6sccm.
In a second aspect of the present invention, cuFeSe produced by the production method according to the first aspect of the present invention 2 Crystalline material.
In general, compared with the prior art, the above technical solution conceived by the present invention mainly has the following technical advantages:
the invention provides a two-dimensional CuFeSe 2 The preparation method mainly synthesizes high-quality, pure-phase and two-dimensional CuFeSe with different crystal faces by regulating and controlling the reaction of selenium vapor and a metal source in the limited area of a sleeve and the temperature 2 Crystalline material.
(1) The invention places two metal sources in a quartz sleeve for space limitation. Preferably, the substrate is directly reversely buckled above the iron source, the reaction space is further limited within a smaller distance, the precursor is ensured to be stable and sufficient supply is provided, and the defect that the product is impure due to additional side reaction caused by large concentration difference of two metal sources due to too long diffusion distance is avoided.
(2) The invention can obtain CuFeSe with smooth and clean surface, larger size and even distribution on the substrate by accurately controlling and adjusting the heat preservation time 2 A nano-sheet. The CuFeSe can be obtained when the heat preservation time is set to 360-450 s 2 The sample, wherein the most regular morphology and the maximum size can be obtained when the heat preservation time is preferably about 420sCuFeSe with the most flat surface 2 A nano-sheet. If the heat preservation time is too short, the precursor reaction is insufficient, so that the sample size is small or the morphology is poor; if the reaction time is too long, the generated sample is in a high-temperature environment for a long time, so that the surface is damaged or etched.
(3) The invention can obtain two-dimensional CuFeSe with different crystal planes by optimizing the furnace temperature 2 A nano-sheet. When the furnace temperature is 600-700 ℃, all rectangular nano-sheets ((100) faces), mixed rectangular and triangular nano-sheets ((100) faces and (221) faces) and all triangular nano-sheets ((221) faces) are respectively obtained on the substrate from low temperature to high temperature, and the nano-sheets with different morphologies correspond to different crystal faces of the target ternary compound. Because the formation energy of different crystal faces is different, the thermodynamic stability is different, and the thermodynamic stable structure is easier to obtain at high temperature, so that the two-dimensional CuFeSe can be carried out by adjusting the temperature of the furnace 2 The crystal face of the crystal material can be controlled to grow.
(4) According to the invention, the iron simple substance powder and the potassium iodide are ground and mixed to be used as an iron source, and the molten potassium iodide is used as a cosolvent to react with a metal simple substance to generate corresponding iodide, so that the melting point of the metal source is reduced, the supersaturation degree is increased, the reaction is promoted, and the energy consumption in the preparation process is reduced.
Preferably, the mass ratio of the precursor copper iodide powder to the iron powder to the potassium iodide is (8-16): 4:1, and the ratio is configured according to the stoichiometric ratio of the metal source of 1:1 to synthesize the CuFeSe 2 . The amount of potassium iodide needs to be controlled within a certain range, and too much can lead to secondary etching of the product or too thick of the product, and too little can lead to insufficient evaporation of the precursor to support CuFeSe 2 Growth of two-dimensional nanoplatelets.
(5) The two-dimensional CuFeSe prepared in the invention 2 The nano-sheet has ferromagnetism at low temperature, and the crystal face of the nano-sheet can be controlled to grow through simple temperature regulation, and different exposed crystal faces can bring about the difference of magnetic transport performance, so that the important influence of the crystal face on the magnetic sequence is revealed for the first time. The preparation method is expandable and of other two-dimensional magnetic materialsThe controllable synthesis provides a new idea and promotes the development of spintronics, magnetoelectricity and spintronics application.
Drawings
FIG. 1 is a two-dimensional CuFeSe pattern according to example 1 of the present invention 2 Schematic diagram of a preparation device of the crystal material;
FIG. 2 example 2 of the present invention illustrates a two-dimensional CuFeSe with a reaction time of 360s 2 Optical microscopy images of crystalline material;
FIG. 3 example 2 of the present invention illustrates two-dimensional CuFeSe with a reaction time of 390s 2 Optical microscopy images of crystalline material;
FIG. 4 example 2 of the present invention shows a two-dimensional CuFeSe with a reaction time of 420s 2 Optical microscopy images of crystalline material;
FIG. 5 example 2 of the present invention shows two-dimensional CuFeSe with a reaction time of 450s 2 Optical microscopy images of crystalline material;
FIG. 6 is a two-dimensional CuFeSe with a reaction temperature of 650℃as exemplified in example 3 of the present invention 2 A thickness scan of the crystalline material;
FIG. 7 is a two-dimensional CuFeSe with a reaction temperature of 700℃as exemplified in example 3 of the present invention 2 A thickness scan of the crystalline material;
FIG. 8 is an optical microscope image of a material according to example 4 of the present invention
FIG. 9 is a two-dimensional CuFeSe example of embodiment 5 of the present invention 2 A thickness scan of the crystalline material;
FIG. 10 is a two-dimensional CuFeSe example of embodiment 5 of the present invention 2 A thickness scan of the crystalline material;
FIG. 11 is a two-dimensional CuFeSe example of embodiment 5 of the present invention 2 A crystal structure characterization diagram of the crystalline material;
FIG. 12 is a two-dimensional CuFeSe example of embodiment 5 of the present invention 2 A crystal structure characterization diagram of the crystalline material;
FIG. 13 is a two-dimensional CuFeSe example of embodiment 5 of the present invention 2 A crystal structure characterization diagram of the crystalline material;
FIG. 14 is a two-dimensional CuFeS of example 5 of the present inventione 2 A crystal structure characterization diagram of the crystalline material;
FIG. 15 is a two-dimensional CuFeSe with a reaction time of about 420s as an example of embodiment 2 of the present invention 2 Optical microscopy images of crystalline material;
FIG. 16 is a two-dimensional CuFeSe with a reaction time of about 420s as exemplified in example 2 of the present invention 2 Optical microscopy image of crystalline material.
Reference numerals illustrate:
1-selenium source, 2-substrate, 3-iron source, 4-copper source, 5-quartz sleeve, 6-tube furnace temperature zone and 7-single temperature zone horizontal tube furnace.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The embodiment of the invention provides a two-dimensional CuFeSe 2 The crystal material and the crystal face controllable growth method adopt a single-temperature-zone horizontal tube furnace as a reaction device.
Fig. 1 shows a schematic diagram of a preparation device according to an embodiment of the present invention, and 7 is a single-temperature-zone horizontal tube furnace, which is divided into upstream and downstream, wherein a half section near the left side of the tube furnace is upstream, and a half section near the right side of the tube furnace is downstream. The furnace temperature zone is schematically indicated at 6 in fig. 1.
Wherein 1 is the position where the selenium source is placed, in practical experiments, the selenium source can be placed at a corresponding position directly upstream of the tube furnace, or the selenium source can be loaded in a quartz boat or a ceramic boat, for example. Wherein the selenium source is positioned at the upstream of the tube furnace and is 14 cm-16 cm away from the center of the tube furnace.
Wherein 2 is the substrate, 3 is the iron source, 4 is the copper source, 5 is the quartz sleeve, and substrate and two kinds of metal source are all set up in the quartz sleeve. The quartz sleeve is of a cylindrical structure with one end opening of 7 x 1 cm; one end is a flat bottom seal, the other pipe orifice is in the upstream direction, the inner diameter and the outer diameter are respectively 11mm and 13mm, and the length is 7cm; the tail of the tube is arranged at the downstream of the tube furnace and is 13 cm-15 cm away from the center of the tube furnace. And the substrate is located above the iron source.
The single-temperature-zone horizontal tube furnace is adopted as a reaction device, and two-dimensional CuFeSe is adopted 2 The crystal material and the crystal face controllable growth method thereof specifically comprise the following steps:
(1) The selenium source is placed in a low temperature zone upstream of the tube furnace. Mixing and grinding elemental iron powder and potassium iodide to obtain an iron source, taking copper iodide powder as a copper source, and separately placing the two metal sources in a quartz sleeve. The quartz sleeve is placed in a downstream deposition zone of the tube furnace and the mica substrate is back-off over the iron source.
The mass ratio of the copper iodide powder to the iron powder to the potassium iodide is (8-16) 4:1. The selenium source dosage is 200 mg-500 mg, so that the selenium powder fills the whole tube along with the carrier gas after the reaction starts.
(2) And starting heating, and carrying selenium vapor into a downstream deposition area of the tube furnace by carrier gas. Heating to 600-700 deg.c, maintaining the temperature for 360-450 s to react the metal source and selenium source to produce two-dimensional CuFeSe 2 Crystalline material.
The temperature of the furnace is controlled to be 600-700 ℃, the temperature rising rate is 30-50 ℃/min, and the pressure in the tube furnace is less than or equal to one atmosphere.
The carrier gas is high-purity argon and hydrogen (the purity is 99.9999%), and the flow rate of the carrier gas is 90-110 sccm and 4-6 sccm respectively. Before the reaction, the reaction area is pre-vacuumized, then argon is filled, the gas is repeatedly washed until the air is exhausted, and hydrogen is added when the tube furnace is started.
Based on the preparation method, the nano-sheets with different morphologies are obtained by controlling different temperatures, and the preparation method specifically comprises the following steps:
when the furnace temperature is 600-650 ℃, the morphology of the crystal material is changed from rectangle to triangle. The shape of the crystal material is mainly rectangular, and the thickness of the crystal material is as thin as 2.67nm corresponding to the (100) crystal face.
When the furnace temperature is 650-700 ℃, the morphology of the crystal material is gradually changed from rectangle to triangle. The shape of the crystal material is mainly triangular, and the thickness of the crystal material is as thin as 2.4nm corresponding to the (221) crystal face.
The two-dimensional CuFeSe provided by the invention is provided in the following according to a specific embodiment 2 The crystal material and the crystal face controllable growth method are further described.
Example 1
A single-temperature-zone horizontal tube furnace is adopted as a reaction device, the tube length of the tube furnace is 90cm, the outer diameter is 25mm, the tube wall thickness is 2mm, the constant temperature zone range is 10cm, the furnace temperature is set to 600 ℃, and the heating rate is 50 ℃/min.
Copper iodide powder, iron powder and potassium iodide with the mass ratio of 10:4:1 are weighed to be 70mg, the iron powder and the potassium iodide are ground and mixed to be used as an iron source, the copper iodide powder is used as a copper source, and the copper iodide powder, the iron powder and the potassium iodide are separately placed in a quartz sleeve. The method comprises the steps of adopting a freshly peeled fluoromica back-off Yu Tieyuan, and then placing the tail of a quartz sleeve on the downstream of a tube furnace, wherein the distance from the tail of the quartz sleeve to the center of the tube furnace is 14 cm.
200mg of selenium source is weighed and put into a ceramic boat to be used as the selenium source, and the selenium source is 15cm away from the center of the tube furnace.
Pre-vacuumizing to about 10Pa before reaction, then filling 600sccm Ar to atmospheric pressure, and repeatedly washing gas to remove residual oxygen. Introducing 100sccm Ar and 5sccm H during the reaction 2 As a carrier gas, and the pressure was maintained at one atmosphere, the holding time was 360s. After the reaction is finished, the carrier gas is kept unchanged, the furnace is pushed open to enable the product to be rapidly cooled to the room temperature, and the required two-dimensional CuFeSe is obtained from the fluorophlogopite sheet 2 Crystalline material. The mirror image of the sample obtained under this condition is shown in fig. 2.
Example 2
The only difference compared with example 1 is that the reaction time is adjusted,
390s, 420s, 450s, respectively. Other steps and processes were the same as in example 1. Two-dimensional CuFeSe prepared when heat preservation time is 390s, 420s and 450s 2 Optical microscopy images of the crystalline material are shown in fig. 3, 4, 5 in order.
As can be seen from fig. 2, 3, 4 and 5, in a certain range, as the reaction time is prolonged, the nano-sheet gradually increases in size, the morphology is gradually regular, the thickness is gradually thinned, the best state is achieved when 420s is compared with the above embodiments, and when the heat preservation time is prolonged to 450s, the etching phenomenon starts to appear on the surface of the sample.
Meanwhile, based on the preparation method of the embodiment 1, due to the reasons of operation delay, time consumption for manual adjustment and the like in an actual experiment, the nano-sheet can still be kept in a better state when the nano-sheet is displayed for about 420 seconds. As shown in FIGS. 15 and 16, the two-dimensional CuFeSe is used for a thermal insulation time of about 420s 2 Optical microscopy image of crystalline material.
Example 3
The difference compared with example 1 is only that the reaction time was set to 420s and the reaction temperature was adjusted to be: 650 ℃,700 ℃. Other steps and processes were the same as in example 1.
Two-dimensional CuFeSe prepared at 650 ℃ and 700 DEG C 2 Optical microscopy images of the crystalline material are shown in sequence in figures 6 and 7.
As can be seen from fig. 4, 6 and 7, the morphology of the sample changes from rectangular to triangular with increasing temperature, the sample is mainly rectangular nano-sheets at 600 ℃, the square and triangular samples are mixed for a period of 650 ℃ and the sample is mainly triangular at 700 ℃.
Example 4
The difference compared with example 1 is that the reaction time is set to 420s, the quartz sleeve is replaced by a common U-shaped groove, and other steps and processes are the same as those of example 1. An optical microscope image of the material prepared according to example 4 is shown in fig. 8.
As can be seen from FIGS. 4 and 8, when the U-shaped groove is used to replace the quartz sleeve, two-dimensional CuFeSe cannot be obtained on the substrate 2 Nanoplatelets, only thicker particles. The quartz sleeve plays a good role in space limitation, so that the precursor reacts and deposits in a small space above the substrate, and finally, the thinner nano-sheet is obtained.
Example 5
The corresponding product of FIG. 4 in example 2 and the corresponding product of FIG. 7 in example 3 were selected.
Method for scanning sample surface by atomic force microscope probe for two-dimensional CuFeSe in FIG. 4 and FIG. 7 respectively 2 The thickness of the crystalline material was measured to give a single piece of material having a thickness of 2.67nm and 2.4nm, respectively, and the measurement results are shown in fig. 9 and 10, respectively.
Two-dimensional CuFeSe prepared by energy dispersion X-ray spectrum pair 2 The crystal material is subjected to component analysis, and the results are respectively shown in fig. 11 and fig. 12, so that the three elements of copper, iron and selenium in the products with two different morphologies are uniformly distributed.
Characterization of the crystal structure of the nanoplatelets of FIGS. 4 and 7, respectively, using a transmission electron microscope, results are shown in FIGS. 13 and 14, respectively, and in combination with FIGS. 11 and 12, it can be confirmed that the rectangular and triangular products are two-dimensional ternary CuFeSe with (100) and (221) crystal planes, respectively 2 Crystalline material.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (9)
1. Two-dimensional CuFeSe 2 The preparation method of the crystal material is characterized by comprising the following steps:
(1) Mixing iron powder and potassium iodide to be used as an iron source, and copper iodide to be used as a copper source; placing the iron source and the copper source in a quartz sleeve downstream of a single temperature zone tube furnace;
(2) Placing a selenium source at the upstream of a single-temperature-zone tubular furnace, and carrying selenium vapor into the downstream of the single-temperature-zone tubular furnace by carrier gas to react with the iron source and the copper source; wherein, the two-dimensional CuFeSe with different crystal faces is prepared on the substrate by adjusting the furnace temperature to 600-700 ℃ and the heat preservation time to 360-450 s 2 Crystalline material.
2. The two-dimensional CuFeSe of claim 1 2 The preparation method of the crystal material is characterized in that the quartz sleeveThe pipe orifice of the pipe faces the upstream direction of the single-temperature-zone pipe furnace, the pipe tail of the quartz sleeve is positioned at the downstream of the pipe furnace, and the pipe tail is 13 cm-15 cm away from the center of the single-temperature-zone pipe furnace.
3. The two-dimensional CuFeSe of claim 1 2 The preparation method of the crystal material is characterized in that the selenium source is positioned at the upstream of the tube furnace and is 14 cm-16 cm away from the center of the tube furnace.
4. The two-dimensional CuFeSe of claim 1 2 The preparation method of the crystal material is characterized in that two-dimensional CuFeSe with different crystal faces is prepared on a substrate by adjusting the furnace temperature 2 The crystal material specifically comprises:
the furnace temperature is increased from 600 ℃ to 700 ℃, the two-dimensional CuFeSe 2 The crystal plane of the crystalline material gradually changes from the (100) plane to the (221) plane.
5. The two-dimensional CuFeSe of claim 1 2 The preparation method of the crystal material is characterized in that in the step (1), the mass ratio of the copper iodide, the iron powder and the potassium iodide is (8-16): 4:1.
6. The two-dimensional CuFeSe of claim 1 2 The preparation method of the crystal material is characterized in that the pressure in the tube furnace is normal pressure.
7. The two-dimensional CuFeSe of claim 1 2 The preparation method of the crystal material is characterized in that the substrate is a fluorine crystal mica sheet; the iron source and the copper source are separately placed within the quartz sleeve, and the substrate is placed over the iron source.
8. Two-dimensional CuFeSe according to any of claims 1-7 2 The preparation method of the crystal material is characterized in that the carrier gas is argon and hydrogen, the flow rate of the argon is 90-110 sccm, and the flow rate of the hydrogen is 4sccm～6sccm。
9. A two-dimensional CuFeSe prepared by the preparation method according to any one of claims 1 to 8 2 Crystalline material.
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