CN117156660A

CN117156660A - MOS aluminium base board heat radiation structure and machine that charges

Info

Publication number: CN117156660A
Application number: CN202311299920.3A
Authority: CN
Inventors: 冯颖盈; 郭珏; 蔡小辉; 林泽锋
Original assignee: Shenzhen Vmax Power Co Ltd
Current assignee: Shenzhen Vmax Power Co Ltd
Priority date: 2023-10-09
Filing date: 2023-10-09
Publication date: 2023-12-01

Abstract

The application discloses a Metal Oxide Semiconductor (MOS) aluminum substrate heat radiation structure and a charger, which comprise a MOS aluminum substrate and a heat radiation module, wherein the MOS aluminum substrate is connected with the surface of the heat radiation module through a distance adjusting mechanism, and the distance adjusting mechanism controls the distance between the MOS aluminum substrate and the surface of the heat radiation module according to the temperature of the heat radiation module. According to the application, the MOS aluminum substrate is connected with the water cooling module through the interval adjusting structure, and the interval between the MOS aluminum substrate and the surface of the heat dissipation module is controlled according to the temperature of the heat dissipation module, so that the mutual influence of abnormal temperature is avoided.

Description

MOS aluminium base board heat radiation structure and machine that charges

Technical Field

The application relates to the technical field of electronic product heat dissipation, in particular to a Metal Oxide Semiconductor (MOS) aluminum substrate heat dissipation structure and a charger.

Background

For heat dissipation, the MOS field effect transistor is usually disposed on an aluminum substrate, and then the aluminum substrate is fixed and bonded to a surface of a heat dissipation module such as a fin heat dissipation plate or a water cooling plate, so as to cool.

Some heat dissipation modules also dissipate heat for the gas electronic components, and are affected by factors such as abnormal temperature of the gas components, the heat dissipation modules are sometimes high in temperature, so that the heat dissipation requirements of the MOS are not met, and even the temperature of the MOS field effect transistor is exceeded, and at the moment, the MOS aluminum substrate cannot effectively dissipate heat. Of course, if the temperature of the MOS field effect transistor is abnormally high, heat dissipation of other components is affected by heat conduction of the heat dissipation module. However, the MOS aluminum substrate and the water cooling module are fixedly connected together and cannot be separated, so that any abnormal conditions can be mutually influenced, and the device is damaged.

Disclosure of Invention

In order to solve the problem that the MOS aluminum substrate and the water cooling module are affected when the temperature abnormality occurs, the MOS aluminum substrate and the water cooling module are connected through the interval adjusting structure, and the interval between the MOS aluminum substrate and the surface of the heat dissipation module is controlled according to the temperature of the heat dissipation module, so that the mutual influence when the temperature abnormality occurs is avoided.

In a first aspect, the application provides a heat dissipation structure of an MOS aluminum substrate, which comprises the MOS aluminum substrate and a heat dissipation module, wherein the MOS aluminum substrate is connected with the surface of the heat dissipation module through a distance adjusting mechanism, and the distance adjusting mechanism controls the distance between the MOS aluminum substrate and the surface of the heat dissipation module according to the temperature of the heat dissipation module.

In some embodiments, the side of the MOS aluminum substrate is provided with a step part, the distance adjusting mechanism comprises an elastic reset piece connected between the step part of the MOS aluminum substrate and the surface of the heat dissipation module, the heat dissipation module is provided with a magnetic piece, the back of the MOS aluminum substrate and the surface of the heat dissipation module are attracted through the magnetic piece, and the curie temperature of the magnetic piece is not higher than the highest warning temperature allowed by the MOS aluminum substrate.

In some embodiments, the surface of the heat dissipation module is provided with a clamping groove, the MOS aluminum substrate is movably inserted into the clamping groove, and the clamping groove comprises a left side clamping strip, a right side clamping strip, a side clamping strip and a bottom clamping strip.

In some embodiments, the left and right side clamping strips are respectively communicated with a fan.

In some embodiments, a first electrode contact is arranged on the MOS aluminum substrate, a second electrode contact corresponding to the first electrode contact is arranged on the side clamping strip, the first electrode contact is contacted with the second electrode contact by moving the MOS aluminum substrate, and the fan starts to work after the first electrode contact is contacted with the second electrode contact.

In some embodiments, two sets of MOS chips are disposed on the MOS aluminum substrate, and each set of MOS chips is disposed adjacent to the side clip on a different side.

In some embodiments, a heat sensitive expansion piece is connected between the MOS aluminum substrate and the side clamping strip.

In some embodiments, the heat sensitive expansion member is a two-way shape memory alloy spring that expands when the temperature is above the phase transition temperature of the two-way shape memory alloy spring and contracts when the temperature is below the phase transition temperature of the two-way shape memory alloy spring.

In certain embodiments, the heat sensitive expansion member is a U-shaped bimetallic spring sheet.

In a second aspect, the application provides a charger, which comprises the MOS aluminum substrate heat dissipation structure.

Compared with the prior art, the application has the following beneficial effects:

according to the application, the surface distance between the MOS aluminum substrate and the heat radiation module can be changed according to the requirement, so that when the temperature of the heat radiation module is low, the heat radiation module is utilized to radiate the MOS aluminum substrate, when the temperature of the heat radiation module is high, the MOS aluminum substrate leaves the heat radiation module, the air flow is utilized to radiate the MOS aluminum substrate, and meanwhile, the heat radiation pressure of the heat radiation module is reduced, and the heat radiation speed of the heat radiation module is improved. The heat dissipation mode can be selected according to the overall working condition of the charger, so that the heat dissipation requirements of the heat dissipation module and the MOS aluminum substrate are matched, and the heat dissipation of the heat dissipation module and the MOS aluminum substrate is prevented from being mutually restricted. The MOS aluminum substrate is guaranteed to be at reasonable temperature all the time, and associated damage of the heat dissipation module when abnormal high temperature occurs is avoided.

Drawings

The present application will now be described in detail with reference to specific embodiments and drawings, which are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the application. The drawings illustrate generally, by way of example and not limitation, embodiments discussed herein. Wherein:

fig. 1 is a schematic diagram of an embodiment.

Fig. 2 is a schematic top view of fig. 1.

Fig. 3 is a schematic view of section A-A of fig. 1.

Fig. 4 is a schematic diagram showing the adhesion of the MOS aluminum substrate to the surface of the heat dissipation module.

Fig. 5 is a schematic view of one side of the electrode contact after contact.

Fig. 6 is a schematic view of the other side of the electrode contact after contact.

Fig. 7 is a schematic view of the two sides after electrode contacts are contacted.

Fig. 8 is a schematic view of a heat sensitive expansion member being a bimetallic spring sheet.

In the figure, 1, an MOS aluminum substrate; 2. a heat dissipation module; 3. side clamping strips; 4. a bottom clamping strip; 5. a magnet; 6. iron blocks; 7. an elastic reset piece; 8. a fan; 9. a first electrode contact; 10. a second electrode contact; 11. a two-way shape memory alloy spring; 12. a MOS chip; 13. a bimetal elastic sheet.

Detailed Description

The following are specific examples of the present application and the technical solutions of the present application will be further described with reference to the accompanying drawings, but the present application is not limited to these examples, and the following embodiments do not limit the applications according to the claims. Furthermore, all combinations of features described in the embodiments are not necessarily essential to the inventive solution.

The principles and structures of the present application are described in detail below with reference to the drawings and the examples.

Example 1

As shown in fig. 1, 2, 3 and 4, a heat dissipation structure of a MOS aluminum substrate 1 includes a MOS aluminum substrate 1 and a heat dissipation module 2, the embodiment is described taking the MOS aluminum substrate 1 applied to a charger as an example, and the heat dissipation module 2 is a water cooling module in the charger.

The MOS aluminum substrate 1 is connected with the surface of the heat dissipation module 2 through a distance adjusting mechanism, and the distance adjusting mechanism controls the distance between the MOS aluminum substrate 1 and the surface of the heat dissipation module 2 according to the temperature of the heat dissipation module 2.

The surface of the heat dissipation module 2 is provided with a clamping groove, the MOS aluminum substrate 1 is movably inserted into the clamping groove, and the clamping groove comprises a left side clamping strip 3, a right side clamping strip 3 and a bottom clamping strip 4 which are opposite.

The MOS aluminum substrate 1 avris has the ladder portion, the ladder portion sets up promptly the breach of MOS aluminum substrate 1 avris, interval adjustment mechanism is including connecting MOS aluminum substrate 1 ladder portion with elasticity reset piece 7 between the heat dissipation module 2 surface, elasticity reset piece 7 is supporting spring, be provided with the magnetic part on the heat dissipation module 2, MOS aluminum substrate 1 back passes through with the heat dissipation module 2 surface the magnetic part actuation, MOS aluminum substrate 1 back is provided with iron plate 6, and the water cooling module side is provided with magnet 5, makes MOS aluminum substrate 1 adsorb at the water cooling module side through the magnetic force of magnet 5 for both closely laminate, so that make both have good heat conduction performance.

The curie temperature of the magnetic part is not higher than the highest warning temperature allowed by the MOS aluminum substrate 1, namely when the temperature of the side surface of the water-cooling module is higher than the highest warning temperature of the MOS aluminum substrate 1, the magnet 5 loses magnetism due to the curie temperature, the MOS aluminum substrate 1 leaves the side surface of the water-cooling module under the elasticity of the supporting spring, so that a space is generated between the two, heat dissipation between the two is enhanced, and meanwhile, the influence of the high temperature of the water-cooling module on the MOS aluminum substrate 1 is avoided. When the temperature is reduced, the magnetism of the magnet 5 is recovered, so that the MOS aluminum substrate 1 is attached to the side face of the water cooling module again, and the water cooling module is utilized for heat dissipation.

A thermosensitive telescopic piece is connected between the MOS aluminum substrate 1 and the side clamping strip 3, and the thermosensitive telescopic piece stretches and contracts according to the change of the surface temperature of the heat dissipation module 2. The heat-sensitive telescopic piece is a double-pass shape memory alloy spring 11, when the temperature is higher than the phase transition temperature of the double-pass shape memory alloy spring 11, the double-pass shape memory alloy spring 11 is stretched, and when the temperature is lower than the phase transition temperature of the double-pass shape memory alloy spring 11, the double-pass shape memory alloy spring 11 is contracted. Of course, as shown in fig. 8, the heat sensitive telescopic member may be a U-shaped bimetal elastic piece 13.

As shown in fig. 5, 6 and 7, a first electrode contact 9 is disposed on the MOS aluminum substrate 1, a second electrode contact 10 corresponding to the first electrode contact 9 is disposed on the side card strip 3, the movement of the MOS aluminum substrate 1 makes the first electrode contact 9 contact with the second electrode contact 10, and the fan 8 starts to operate after the first electrode contact 9 contacts with the second electrode contact 10.

Two groups of MOS chips 12 are arranged on the MOS aluminum substrate 1, and each group of MOS chips 12 is respectively adjacent to the side clamping strips 3 on different sides. The left side clamping strip 3 and the right side clamping strip 3 are respectively communicated with a fan 8.

When the MOS chips 12 on one side are heated to a certain temperature, the adjacent heat-sensitive telescopic piece is contracted, then the first electrode contact 9 on the side is contacted with the second electrode contact 10, so that the fan 8 on the side works, the heat dissipation of the MOS aluminum substrate 1 on the end side area is facilitated, when the first electrode contact 9 on the two end sides and the second electrode contact 10 are conducted, the air flow directions of the two fans 8 are the same, namely, one fan 8 blows air to a gap between the MOS aluminum substrate 1 and the water cooling module, and the other fan 8 sucks air on the other end, so that the convection heat dissipation is increased.

Although some terms are used more herein, the possibility of using other terms is not excluded. These terms are used merely for convenience in describing and explaining the nature of the application; they are to be interpreted as any additional limitation that is not inconsistent with the spirit of the present application. The order of execution of the operations, steps, and the like in the apparatuses and methods shown in the specification and the drawings may be any order as long as the order is not particularly limited, and the output of the preceding process is not used in the following process. The use of similar ordinal terms (e.g., "first," "then," "second," "again," "then," etc.) for convenience of description does not necessarily imply that they are necessarily performed in such order.

It will be appreciated by those of ordinary skill in the art that all directional references (e.g., above, below, upward, downward, top, bottom, left, right, vertical, horizontal, etc.) are descriptive of the drawings to aid the reader in understanding, and do not denote (e.g., position, orientation, use, etc.) limitation of the scope of the application defined by the appended claims, but rather are intended to facilitate describing the application and simplifying the description, the orientation words do not indicate and imply that the device or element being referred to must have a particular orientation or be constructed and operated in a particular orientation, the orientation words "inside and outside" referring to the inside and outside of the profile of the components themselves, unless otherwise indicated.

Spatially relative terms, such as "above … …," "above … …," "upper surface at … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial location relative to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "over" other devices or structures would then be oriented "below" or "beneath" the other devices or structures. Thus, the exemplary term "above … …" may include both orientations of "above … …" and "below … …". The device may also be positioned in other different ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

Additionally, some ambiguous terms (e.g., substantially, certain, generally, etc.) may refer to slight imprecision or slight deviation of conditions, amounts, values, or dimensions, etc., some of which are within manufacturing tolerances or tolerances. It should be noted that, the terms "first," "second," and the like are used for defining the components, and are merely for convenience in distinguishing the corresponding components, and the terms have no special meaning unless otherwise stated, so they should not be construed as limiting the scope of the present application.

The specific embodiments described herein are offered by way of example only to illustrate the spirit of the application. Those skilled in the art may make various modifications or additions to the described embodiments or substitutions thereof without departing from the spirit of the application or exceeding the scope of the application as defined in the accompanying claims.

Claims

1. The utility model provides a MOS aluminium base board heat radiation structure, includes MOS aluminium base board (1) and heat dissipation module (2), its characterized in that, MOS aluminium base board (1) with heat dissipation module (2) surface is connected through interval adjustment mechanism, interval adjustment structure is according to the temperature control of heat dissipation module (2) MOS aluminium base board (1) with the interval on heat dissipation module (2) surface.

2. The MOS aluminum substrate heat dissipation structure of claim 1, wherein the MOS aluminum substrate (1) has a step portion at an edge side, the distance adjusting mechanism comprises an elastic reset member (7) connected between the step portion of the MOS aluminum substrate (1) and the surface of the heat dissipation module (2), a magnetic member is disposed on the heat dissipation module (2), the back surface of the MOS aluminum substrate (1) and the surface of the heat dissipation module (2) are attracted by the magnetic member, and the curie temperature of the magnetic member is not higher than the highest warning temperature allowed by the MOS aluminum substrate (1).

3. The MOS aluminum substrate heat dissipation structure of claim 2, wherein a clamping groove is provided on the surface of the heat dissipation module (2), the MOS aluminum substrate (1) is movably inserted in the clamping groove, and the clamping groove comprises a left side clamping strip (3) and a right side clamping strip (4) which are opposite to each other, and a bottom clamping strip (4).

4. A MOS aluminum substrate heat radiation structure according to claim 3, characterized in that the left and right side clamping strips (3) are respectively communicated with a fan (8).

5. The MOS aluminum substrate heat dissipation structure according to claim 4, wherein a first electrode contact (9) is provided on the MOS aluminum substrate (1), a second electrode contact (10) corresponding to the first electrode contact (9) is provided on the side clip (3), the movement of the MOS aluminum substrate (1) causes the first electrode contact (9) to contact with the second electrode contact (10), and the fan (8) starts to operate after the first electrode contact (9) contacts with the second electrode contact (10).

6. The MOS aluminum substrate heat dissipation structure of claim 5, wherein two sets of MOS chips (12) are provided on the MOS aluminum substrate (1), each set of MOS chips (12) being provided adjacent to the side clip (3) on a different side, respectively.

7. The heat dissipation structure of the MOS aluminum substrate according to claim 6, wherein a heat-sensitive expansion piece is connected between the MOS aluminum substrate (1) and the side clamping strip (3).

8. The MOS aluminum substrate heat dissipation structure of claim 7, wherein the heat sensitive expansion member is a double-pass shape memory alloy spring (11), the double-pass shape memory alloy spring (11) is elongated when a temperature is higher than a phase transition temperature of the double-pass shape memory alloy spring (11), and the double-pass shape memory alloy spring (11) is contracted when the temperature is lower than the phase transition temperature of the double-pass shape memory alloy spring (11).

9. The MOS aluminum substrate heat dissipation structure as recited in claim 7, characterized in that the heat sensitive expansion member is a U-shaped bimetal elastic sheet (13).

10. The charger is characterized by comprising the MOS aluminum substrate heat dissipation structure as claimed in any one of claims 1 to 9.