CN117156352A - Array loudspeaker suspension vibration film and preparation method thereof - Google Patents
Array loudspeaker suspension vibration film and preparation method thereof Download PDFInfo
- Publication number
- CN117156352A CN117156352A CN202311018927.3A CN202311018927A CN117156352A CN 117156352 A CN117156352 A CN 117156352A CN 202311018927 A CN202311018927 A CN 202311018927A CN 117156352 A CN117156352 A CN 117156352A
- Authority
- CN
- China
- Prior art keywords
- wafer
- loudspeaker
- film
- speaker
- suspended
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000725 suspension Substances 0.000 title claims description 10
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 59
- 239000004642 Polyimide Substances 0.000 claims abstract description 34
- 229920001721 polyimide Polymers 0.000 claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000926 separation method Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000000708 deep reactive-ion etching Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 29
- 238000001259 photo etching Methods 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000005484 gravity Effects 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 39
- 239000010409 thin film Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
- H04R9/06—Loudspeakers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
- H04R9/02—Details
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
- H04R2231/003—Manufacturing aspects of the outer suspension of loudspeaker or microphone diaphragms or of their connecting aspects to said diaphragms
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2400/00—Loudspeakers
- H04R2400/11—Aspects regarding the frame of loudspeaker transducers
Abstract
The application relates to a suspended vibrating film of an array loudspeaker and a preparation method thereof, wherein the preparation method comprises the following steps: s1, manufacturing a plurality of top-layer support columns on the surface of a speaker wafer, and etching a back cavity on the back of the speaker wafer by deep reactive ion etching to form a beam film on the surface; s2, coating a PPC material on the surface of a glass sheet as a separation layer, baking to solidify the PPC material, and coating a polyimide material on the surface of the separation layer, wherein the size of the glass sheet is larger than that of a loudspeaker wafer; s3, reversely buckling the speaker wafer on the polyimide material of the glass sheet to form a bonding object; s4, maintaining the horizontal state, and putting the bonded object on N 2 Heating and bonding in an oven; s5, overturning the attached object, heating and solidifying, liquefying and volatilizing the PPC material, separating the speaker wafer, and solidifying the polyimide material to form a suspended film. The application canAnd a complete vibrating membrane is manufactured, so that the area of the vibrating membrane is increased, and the output sound pressure level is further improved.
Description
Technical Field
The application relates to the field of speakers, in particular to an array speaker suspension vibrating film and a preparation method thereof.
Background
The working principle of the mems loudspeaker is that the thin film layer is utilized to convert an electrical signal into mechanical vibration under the driving of the electrical signal, so that sound is generated, and the driving modes generally comprise three modes, piezoelectric, electrostatic and electromagnetic. The film has the advantages of thin thickness, small size, excellent energy efficiency, quick response and excellent audio performance, and can cover the whole frequency range of 20hz-20 khz.
Currently, as shown in fig. 1, 2 and 3, the white area in fig. 2 and 3 is a thin film, and the shadow area is hollowed out, which are similar to the beam film structure of the current commercial speakers, and the electric signal is converted into mechanical vibration of the thin film to generate sound. The inventor of the present application found that the effective area of the vibrating membrane with the beam membrane structure is smaller, especially the array microphone, because each unit (tube core) pattern must have a part of area as a support, and the support part is also provided with a metal wire, wire bonding is needed, a certain area must be left, laser scribing and cutting are needed in the future, and packaging, a sticky tube seat and the like are needed in the future, so that the movable membrane has a lower duty ratio, and the sound pressure level output of the current piezoelectric mes loudspeaker is lower.
Disclosure of Invention
The application aims to overcome the defects of the related art and provides a preparation method of an array loudspeaker suspended vibrating film, which can be used for manufacturing a complete vibrating film, increasing the area of the vibrating film and further improving the output sound pressure level.
In order to solve the technical problems, the technical scheme of the application is as follows: a preparation method of an array loudspeaker suspended vibrating film comprises the following steps:
s1, manufacturing a plurality of top-layer support columns on the surface of a speaker wafer, and etching a back cavity on the back of the speaker wafer by deep reactive ion etching to form a beam film on the surface;
s2, coating a PPC material on the surface of a glass sheet as a separation layer, baking to solidify the PPC material, and coating a polyimide material on the surface of the separation layer, wherein the size of the glass sheet is larger than that of a loudspeaker wafer;
s3, reversely buckling the speaker wafer on the polyimide material of the glass sheet to form a bonding object;
s4, keeping the horizontal state, and putting the attached object into N 2 The oven heats up and heats up, utilizing gravity of the speaker wafer and expansion of the PPC materialThe expanding force adheres the polyimide material to the top support column, and more than 95% of solvent in the polyimide material is removed;
s5, turning over the attached object, and supporting the edge of the glass sheet to suspend the attached object;
s6, heating and curing are carried out according to a curing temperature curve of the polyimide material, the PPC material is liquefied and volatilized while the polyimide material is cured, the speaker wafer is separated, and the polyimide material forms a suspended film on the top layer of the top layer support column.
Further, in S1, a plurality of top support posts are fabricated on the surface of the speaker wafer, including:
firstly, manufacturing a SiO or Sin or Si dielectric layer on the surface of a speaker wafer by utilizing a PECVD process;
and then manufacturing a top layer support column on the dielectric layer by utilizing a photoetching process.
Further, in S1, a plurality of top support posts are fabricated on the surface of the speaker wafer, including:
firstly, sputtering an Al or Si or SiO dielectric film on the surface of a speaker wafer by utilizing a dispenser process;
and then manufacturing a top layer support column on the dielectric film by utilizing a photoetching process.
Further, in S1, a plurality of top support posts are fabricated on the surface of the speaker wafer, including:
and manufacturing a top layer support column on the surface of the loudspeaker wafer after photoetching development.
Further, in S2, the baking temperature is 100-120 ℃ and the baking time is 90-180S.
Further, in S4, the heating step is:
firstly, maintaining the room temperature at 20 ℃ for 3min;
then heating to 60+/-3 ℃ at 3 ℃/min, and maintaining for 5min;
and then heating to 90+ -3deg.C at 5deg.C/min, and maintaining for at least 90s.
The application also provides an array type loudspeaker suspended vibrating film, which is prepared by adopting the preparation method of the array type loudspeaker suspended vibrating film.
The application also provides an array loudspeaker suspension vibration film, which comprises:
the back of the loudspeaker wafer is etched with a plurality of back cavities, and a beam film is formed on the surface of the loudspeaker wafer;
the lower ends of the top layer support columns are connected to the surface of the loudspeaker wafer;
and the suspended vibrating diaphragm is formed at the upper end of the top layer support column.
Further, the material of the suspended vibrating diaphragm is polyimide material.
After the technical scheme is adopted, a film pasting process and a sacrificial layer releasing process are adopted, a complete suspended film is manufactured on the top layer to serve as a vibrating film, the area of the vibrating film is increased to improve the output sound pressure level, the higher sound pressure level transmission is provided under the same driving signal, the movable unit part of the MEMS loudspeaker can be protected, the single device has the effects of water resistance and dust resistance, and the reliability is enhanced.
Drawings
Fig. 1 is a schematic diagram of a beam film structure of a conventional speaker;
FIG. 2 is a top view of a beam film structure;
FIG. 3 is a schematic view of another set of beam film structures;
fig. 4 is a schematic structural diagram of an array speaker suspension diaphragm according to the present application;
FIG. 5 is a flow chart of the preparation of the suspended diaphragm of the array loudspeaker of the present application;
in the figure, 1, a loudspeaker wafer; 2. a top layer support column; 3. a back cavity; 4. a beam film; 5. a glass sheet; 6. a PPC material; 7. a polyimide material;
in fig. 5, (a) shows the step of fabricating the top-level support columns; (b) back cavity etching and surface beam film forming steps; (c) A step of coating the surface of the glass sheet with PPC material and polyimide material; (d) A step of reversely buckling the speaker wafer on the polyimide material; (e) Showing the steps of baking the sheet in an oven, turning over, and falling off the wafer.
Detailed Description
In order that the application may be more readily understood, a more particular description of the application will be rendered by reference to specific embodiments that are illustrated in the appended drawings.
In one embodiment, as shown in fig. 5, a method for preparing a suspended vibration film of an array speaker includes:
s1, manufacturing a plurality of top-layer support columns 2 on the surface of a speaker wafer 1, as shown in FIG. 5 (a); etching the back cavity 3 on the back surface of the speaker wafer 1 by deep reactive ion etching to form a beam film 4 on the surface, as shown in fig. 5 (b);
s2, coating a PPC material 6 on the surface of a glass sheet 5 to serve as a separation layer, baking the separation layer to enable the PPC material 6 to be solidified, and coating a polyimide material 7 on the surface of the separation layer, as shown in fig. 5 (c); the size of the glass sheet 5 is slightly larger than that of the loudspeaker wafer 1, and the 6-inch glass sheet 5 can be selected according to the 4-inch loudspeaker wafer 1;
it should be noted that before the PPC material is coated on the surface of the glass sheet 5, the PPC material is dissolved in an organic solvent, and in the coating process, the PPC solution prepared by the PPC particle ratio is used for coating, and in a non-molten state, the solvent is volatilized after baking, so as to become a PPC solid film; in addition, when the material is coated on the surface of the separation layer, the material type and thickness of the film can be selected according to simulation and theoretical data, the film thickness is optimized according to the rotation number and time of spin coating, and the high-temperature baking operation is not performed, so that the adhesiveness of the polyimide material 7 is maintained;
s3, reversely buckling the speaker wafer 1 on the polyimide material 7 of the glass sheet 5 to form a bonding object, as shown in fig. 5 (d); in this step, no external force is applied;
s4, keeping the horizontal state, and putting the attached object into N 2 Heating the baking oven, adhering the polyimide material 7 to the top support column 2 by utilizing the gravity of the speaker wafer 1 and the expansion force of the PPC material 6, and removing more than 95% of solvent in the polyimide material 7;
s5, turning the attached object in the oven, wherein the glass sheet 5 is larger than the loudspeaker wafer 1, so that a tool can be used for supporting the glass edge, suspending the attached object and placing a tray under the attached loudspeaker wafer 1;
s6, heating and curing are carried out according to a curing temperature curve of the polyimide material 7, the PPC material 6 is liquefied and volatilized while the polyimide material 7 is cured, the loudspeaker wafer 1 is separated, and the polyimide material forms a suspended film on the top layer of the top layer support column 2, as shown in fig. 5 (e).
Specifically, the embodiment adopts a film pasting process and a sacrificial layer releasing process, a complete suspended film is manufactured on the top layer to serve as a vibrating film, the area of the vibrating film is increased to improve the output sound pressure level, higher sound pressure level transmission is provided under the same driving signal, and the movable unit part of the MEMS loudspeaker can be protected, so that a single device has the effects of water resistance and dust resistance, and the reliability is enhanced. In addition, the application uses the characteristics of high-temperature melting and specific high-temperature direct volatilization of the PPC material to peel off the generated suspended film from the glass sheet 5, thereby simplifying the process flow and improving the yield.
In S1, a plurality of top support posts 2 are fabricated on the surface of the speaker wafer 1, and three types of support posts can be enumerated.
First kind:
firstly, manufacturing a SiO or Sin or Si dielectric layer on the surface of a speaker wafer 1 by utilizing a PECVD process;
and then manufacturing the top layer support columns 2 on the dielectric layer by utilizing a photoetching process.
Second kind:
firstly, sputtering an Al or Si or SiO dielectric film on the surface of a speaker wafer 1 by using a sputtering process;
and then manufacturing the top layer support columns 2 on the dielectric film by utilizing a photoetching process.
Third kind:
in S1, a plurality of top support columns 2 are fabricated on the surface of the speaker wafer 1, including:
after photolithography, top support posts 2 are fabricated on the surface of the speaker wafer 1.
In one embodiment, in S2, the baking temperature is 100-120℃for a period of 90-180S.
In one embodiment, in S4, the step of heating up includes:
firstly, maintaining the room temperature at 20 ℃ for 3min;
then heating to 60+/-3 ℃ at 3 ℃/min, and maintaining for 5min;
and then heating to 90+ -3deg.C at 5deg.C/min, and maintaining for at least 90s.
Specifically, the polyimide adhesive force without temperature treatment is very strong, the liquefaction and volatilization temperature of the PPC material is generally above 150 ℃ and some 200 ℃, the temperature of the heating step is within 100 ℃, the temperature belongs to safe temperature, the PPC material can not be volatilized certainly, the polyimide adhesive force is mainly used for expanding the PPC material, a certain temperature and time are given, the polyimide material 7 slowly evaporates the solvent and is adhered to the top layer support column 2, and the adhesion can be better by adopting the heating step. Preferably, the heating step is as follows: firstly, maintaining the room temperature at 20 ℃ for 3min; then heating to 60 ℃ at 3 ℃/min, and maintaining for 5min; and then heated to 90℃at 5℃per minute, and maintained for 90 seconds.
In one embodiment, as shown in fig. 4, an array speaker suspension diaphragm is manufactured by the method for manufacturing the array speaker suspension diaphragm.
In one embodiment, as shown in fig. 4, an array speaker suspension diaphragm includes:
the back of the loudspeaker wafer 1 is etched with a plurality of back cavities 3, and a beam film 4 is formed on the surface of the loudspeaker wafer;
the lower ends of the top layer support columns 2 are connected to the surface of the loudspeaker wafer 1;
the vibrating diaphragm is suspended and formed at the upper end of the top layer support column 2.
In one embodiment, the material of the suspended diaphragm is polyimide material 7.
With the above-described preferred embodiments according to the present application as an illustration, the above-described descriptions can be used by persons skilled in the relevant art to make various changes and modifications without departing from the scope of the technical idea of the present application. The technical scope of the present application is not limited to the description, but must be determined according to the scope of claims.
Claims (9)
1. A method for preparing an array loudspeaker suspended vibration film is characterized in that,
comprising the following steps:
s1, manufacturing a plurality of top-layer support columns (2) on the surface of a loudspeaker wafer (1), etching a back cavity (3) on the back of the loudspeaker wafer (1) by adopting deep reactive ion etching, and forming a beam film (4) on the surface;
s2, coating a PPC material (6) on the surface of a glass sheet (5) as a separation layer, baking to solidify the PPC material (6), and coating a polyimide material (7) on the surface of the separation layer, wherein the size of the glass sheet (5) is larger than that of a loudspeaker wafer (1);
s3, reversely buckling the loudspeaker wafer (1) on the polyimide material (7) of the glass sheet (5) to form a bonding object;
s4, keeping the horizontal state, and putting the attached object into N 2 Heating the baking oven, adhering the polyimide material (7) to the top support column (2) by utilizing the gravity of the loudspeaker wafer (1) and the expansion force of the PPC material (6), and removing more than 95% of solvent in the polyimide material (7);
s5, turning over the attached object, and supporting the edge of the glass sheet (5) to suspend the attached object;
s6, heating and curing are carried out according to a curing temperature curve of the polyimide material (7), the PPC material (6) is liquefied and volatilized while the polyimide material (7) is cured, the loudspeaker wafer (1) is separated, and the polyimide material (7) forms a suspended film on the top layer of the top layer support column (2).
2. The method for preparing the suspended vibration film of the array loudspeaker of claim 1, wherein,
in S1, a plurality of top support columns (2) are manufactured on the surface of a speaker wafer (1), and the method comprises the following steps:
firstly, manufacturing a SiO or Sin or Si dielectric layer on the surface of a speaker wafer (1) by utilizing a PECVD process;
and then manufacturing a top layer support column (2) on the dielectric layer by utilizing a photoetching process.
3. The method for preparing the suspended vibration film of the array loudspeaker of claim 1, wherein,
in S1, a plurality of top support columns (2) are manufactured on the surface of a speaker wafer (1), and the method comprises the following steps:
firstly, sputtering an Al or Si or SiO dielectric film on the surface of a speaker wafer (1) by utilizing a sputtering process;
and then manufacturing a top layer support column (2) on the dielectric film by utilizing a photoetching process.
4. The method for preparing the suspended vibration film of the array loudspeaker of claim 1, wherein,
in S1, a plurality of top support columns (2) are manufactured on the surface of a speaker wafer (1), and the method comprises the following steps:
and after photoetching development, manufacturing a top layer support column (2) on the surface of the loudspeaker wafer (1).
5. The method for preparing the suspended vibration film of the array loudspeaker of claim 1, wherein,
and S2, baking at 100-120 ℃ for 90-180S.
6. The method for preparing the suspended vibration film of the array loudspeaker of claim 1, wherein,
s4, the temperature rising and heating steps are as follows:
firstly, maintaining the room temperature at 20 ℃ for 3min;
then heating to 60+/-3 ℃ at 3 ℃/min, and maintaining for 5min;
and then heating to 90+ -3deg.C at 5deg.C/min, and maintaining for at least 90s.
7. An array loudspeaker suspension vibration film is characterized in that,
a method for preparing an array loudspeaker suspended vibration film according to any one of claims 1-6.
8. An array loudspeaker suspension vibration film is characterized in that,
comprising the following steps:
a loudspeaker wafer (1), the back of which is etched with a plurality of back cavities (3), and the surface of which is formed with a beam film (4);
the lower ends of the top layer support columns (2) are connected to the surface of the loudspeaker wafer (1); the vibrating diaphragm is suspended and formed at the upper end of the top layer support column (2).
9. The array loudspeaker suspended diaphragm of claim 8,
the material of the suspended vibrating diaphragm is polyimide material (7).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202311018927.3A CN117156352A (en) | 2023-08-14 | 2023-08-14 | Array loudspeaker suspension vibration film and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202311018927.3A CN117156352A (en) | 2023-08-14 | 2023-08-14 | Array loudspeaker suspension vibration film and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN117156352A true CN117156352A (en) | 2023-12-01 |
Family
ID=88903572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202311018927.3A Pending CN117156352A (en) | 2023-08-14 | 2023-08-14 | Array loudspeaker suspension vibration film and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN117156352A (en) |
-
2023
- 2023-08-14 CN CN202311018927.3A patent/CN117156352A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6020215A (en) | Process for manufacturing microstructure | |
US8225501B2 (en) | Method for making thermoacoustic device | |
US6097830A (en) | Transducer diaphragm with thermal strain relief | |
US6857501B1 (en) | Method of forming parylene-diaphragm piezoelectric acoustic transducers | |
TWI293851B (en) | Capacitive microphone and method for making the same | |
CN101123827B (en) | Adhesion preventive silicon capacitance sound transmitter chip and its making method | |
US8549715B2 (en) | Piezoelectric microspeaker and method of fabricating the same | |
CN105050022A (en) | sound reproduction system and mehtod for operating and producing sound transducer | |
JP2004356707A (en) | Sound detection mechanism | |
JP2006516368A5 (en) | ||
CN103139691A (en) | Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof | |
CN117156352A (en) | Array loudspeaker suspension vibration film and preparation method thereof | |
CN203104765U (en) | Porous SOI (Silicon-On-Insulator) silicon-silicon bonding MEMS (Micro-Electro-mechanical System) silicon microphone | |
CN104811881A (en) | Piezoelectric loudspeaker and method for forming same | |
KR100791084B1 (en) | Piezoelectric microspeaker with corrugated diaphragm | |
JP2002186096A (en) | Manufacturing method for piezoelectric speaker and composite piezoelectric sheet | |
KR101355434B1 (en) | Manufacturing method for plastic chamber plate with ordered porous polymer membrane | |
CN112689227B (en) | Piezoelectric MEMS loudspeaker imitating cochlea spiral vibrating membrane and preparation method | |
US20190261110A1 (en) | Acoustic apparatus, system and method of fabrication | |
WO2019090601A1 (en) | Micro energy collector based on piezoelectric thick film mems process and preparation method thereof | |
JP2012023318A (en) | Manufacturing method of microminiature package substrate with cavity | |
CN114257949B (en) | Loudspeaker manufacturing method and loudspeaker | |
CN110085735A (en) | MEMS piezoelectric speaker and preparation method thereof | |
WO2019144370A1 (en) | Mems piezoelectric speaker and preparation method therefor | |
JP3216065B2 (en) | Method for manufacturing hollow structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Country or region after: China Address after: 213000 No. 17, beitanghe East Road, Tianning District, Changzhou City, Jiangsu Province Applicant after: Changzhou Yuanjingmo Microelectronics Co.,Ltd. Address before: No. 17 Beitang Hedong Road, Tianning District, Changzhou City, Jiangsu Province, 213100 Applicant before: CHANGZHOU YUANJING ELECTRONIC TECHNOLOGY CO.,LTD. Country or region before: China |