CN117144461A - Single crystal furnace and method for improving boron-doped single crystal silicon BMD and single crystal bar - Google Patents
Single crystal furnace and method for improving boron-doped single crystal silicon BMD and single crystal bar Download PDFInfo
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- CN117144461A CN117144461A CN202311138351.4A CN202311138351A CN117144461A CN 117144461 A CN117144461 A CN 117144461A CN 202311138351 A CN202311138351 A CN 202311138351A CN 117144461 A CN117144461 A CN 117144461A
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- 239000013078 crystal Substances 0.000 title claims abstract description 80
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 37
- 239000010439 graphite Substances 0.000 claims abstract description 37
- 239000010453 quartz Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052796 boron Inorganic materials 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 230000006911 nucleation Effects 0.000 claims abstract description 4
- 238000010899 nucleation Methods 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 claims 2
- 201000006935 Becker muscular dystrophy Diseases 0.000 description 46
- 208000037663 Best vitelliform macular dystrophy Diseases 0.000 description 46
- 208000020938 vitelliform macular dystrophy 2 Diseases 0.000 description 46
- 235000012431 wafers Nutrition 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a single crystal furnace, a method and a single crystal bar for improving boron-doped single crystal silicon BMD, which relate to the technical field of single crystal silicon crystal pulling, wherein boron-doped polycrystalline silicon is placed in a quartz crucible to be melted, and seed crystals are lowered to draw the single crystal silicon bar; when the crystal bar enters the graphite guide cylinder through the heat shield in the equal diameter, the graphite guide cylinder stabilizes the temperature to ensure that the BMD has enough time for nucleation and growth, and the BMD of the boron doped monocrystalline silicon reaches 1E 9ea/cm 3 Above, reach the specification requirement, improve the yield.
Description
Technical Field
The invention belongs to the technical field of monocrystalline silicon crystal pulling, and particularly relates to a monocrystalline furnace, a method and a monocrystalline bar for improving boron-doped monocrystalline silicon BMD.
Background
In recent years, with the progress of miniaturization in the manufacturing process of semiconductor devices, the requirements for the required silicon wafers are becoming higher and higher, and not only the silicon wafer surface is requiredThe surface region is rarely or even not defective and requires that the wafer have sufficient bulk micro defects (Bulk Micro Defects, BMD) to protect the region of the wafer where the electronic components are located from contamination by heavy metal impurities. Heavy metal impurities contained in the silicon wafer are already an important factor affecting the quality of semiconductor devices, so the content of the heavy metal impurities needs to be reduced as much as possible in the production process of the silicon wafer. Currently, it is known that when a sufficient number of BMDs are formed inside a silicon wafer, these BMDs have intrinsic gettering (Intrinsic Gettering, IG) effect of capturing heavy metal impurities, which can greatly improve the problem of poor quality of semiconductor devices due to heavy metal impurities. In recent years, the specification requirement of boron-doped monocrystalline silicon on BMD is equal to or greater than 1E 9ea/cm 3 If the BMD of the product is lower than the specification, the product reject ratio is high.
Disclosure of Invention
In view of the above, the present invention provides a single crystal furnace for improving the yield of products and improving the BMD of boron doped single crystal silicon.
There is also a need to provide a method for improving the yield of products by improving the BMD of boron doped monocrystalline silicon.
It is also necessary to provide a single crystal ingot.
The technical scheme adopted for solving the technical problems is as follows:
the utility model provides an improve monocrystalline furnace of boron-doped monocrystalline silicon BMD, includes furnace body and quartz crucible, the steady temperature subassembly that is located the furnace body, steady temperature subassembly includes heat shield, graphite draft tube, quartz crucible, heat shield, graphite draft tube are coaxial, the heat shield is located quartz crucible top, graphite draft tube is located the top of heat shield, the heat shield with the furnace body is connected, graphite draft tube with the upper portion of furnace body is connected, when the crystal bar gets into graphite draft tube through the heat shield, and graphite draft tube will temperature stabilization makes BMD have sufficient time to nucleate, grow, and boron-doped monocrystalline silicon's BMD reaches 1E 9ea/cm 3 The above.
Preferably, the graphite guide cylinder stabilizes the temperature at 650 ℃ to 800 ℃.
Preferably, the heat shield reduces the temperature of the ingot to below 1000 ℃.
A method for improving boron doped monocrystalline silicon BMD, drawing by using the monocrystalline furnace for improving boron doped monocrystalline silicon BMD, comprising the following steps:
s1: placing the boron-doped polycrystalline silicon in a quartz crucible for melting, and lowering a seed crystal to draw a monocrystalline silicon rod;
s2: at constant diameter, the graphite guide cylinder is stabilized at a predetermined temperature to draw the ingot so as to increase BMD.
Preferably, the predetermined temperature is 650 ℃ to 800 ℃.
Preferably, the method further comprises adjusting the temperature of the single crystal furnace at the constant diameter along with the change of the length of the constant diameter crystal bar.
Preferably, the temperature gradually decreases as the length of the isodiametric ingot increases in the case of 0-200mm in diameter, and gradually increases as the length of the ingot increases in the isodiametric stage in the case of 200mm or more in diameter.
A single crystal ingot is pulled by the method for improving the BMD of boron-doped single crystal silicon to obtain the ingot, and the BMD of the ingot reaches 1E 9ea/cm 3 The above.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a single crystal furnace, a method and a single crystal bar for improving boron-doped single crystal silicon BMD, wherein boron-doped polycrystalline silicon is placed in a quartz crucible to be melted, and seed crystals are lowered to draw the single crystal silicon bar; when the crystal bar enters the graphite guide cylinder through the heat shield in the equal diameter, the graphite guide cylinder stabilizes the temperature to ensure that the BMD has enough time for nucleation and growth, and the BMD of the boron doped monocrystalline silicon reaches 1E 9ea/cm 3 Above, reach the specification requirement, improve the yield.
Drawings
FIG. 1 is a schematic diagram of a single crystal furnace.
FIG. 2 is a schematic diagram of a single crystal furnace of comparative example one.
Fig. 3 is a graph of predetermined temperature.
Fig. 4 is a BMD detection chart of the first, second and first comparative examples.
Fig. 5 is a graph showing the results of the crystallization rates of the first, second and comparative examples.
In the figure: furnace body 100, quartz crucible 200, steady temperature subassembly 300, heat shield 310, graphite draft tube 320, water cooling jacket 400.
Detailed Description
The technical scheme and technical effects of the embodiments of the present invention are further described in detail below with reference to the accompanying drawings.
The utility model provides an improve monocrystalline furnace of boron-doped monocrystalline silicon BMD, includes furnace body and quartz crucible, the steady temperature subassembly that is located the furnace body, steady temperature subassembly includes heat shield, graphite draft tube, quartz crucible, heat shield, graphite draft tube are coaxial, the heat shield is located quartz crucible top, graphite draft tube is located the top of heat shield, the heat shield with the furnace body is connected, graphite draft tube with the upper portion of furnace body is connected, when the crystal bar gets into graphite draft tube through the heat shield, and graphite draft tube will temperature stabilization makes BMD have sufficient time to nucleate, grow, and boron-doped monocrystalline silicon's BMD reaches 1E 9ea/cm 3 The above.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a single crystal furnace, a method and a single crystal bar for improving boron-doped single crystal silicon BMD, wherein boron-doped polycrystalline silicon is placed in a quartz crucible to be melted, and seed crystals are lowered to draw the single crystal silicon bar; when the crystal bar enters the graphite guide cylinder through the heat shield in the equal diameter, the graphite guide cylinder stabilizes the temperature to ensure that the BMD has enough time for nucleation and growth, and the BMD of the boron doped monocrystalline silicon reaches 1E 9ea/cm 3 Above, reach the specification requirement, improve the yield.
Further, the graphite guide cylinder stabilizes the temperature at 650-800 ℃.
Further, the heat shield reduces the temperature of the ingot to below 1000 ℃, reduces the time for forming another micro defect, and reduces the residence time so that the point defect forming BMD is not consumed, and thus the generation of BMD is not inhibited.
A method for improving boron doped monocrystalline silicon BMD, drawing by using the monocrystalline furnace for improving boron doped monocrystalline silicon BMD, comprising the following steps:
s1: placing the boron-doped polycrystalline silicon in a quartz crucible for melting, and lowering a seed crystal to draw a monocrystalline silicon rod;
s2: at constant diameter, the graphite guide cylinder is stabilized at a predetermined temperature to draw the ingot so as to increase BMD.
Further, the preset temperature is 650-800 ℃, the time for nucleating BMD of the crystal bar is increased, the residence time of the crystal bar at 650-800 ℃ is prolonged, and the nucleating and growing of the BMD are facilitated, so that the BMD density is improved.
When the crystal is pulled, the temperature of a solid-liquid interface reaches about 1400 ℃, the crystal bar between the quartz crucible and the graphite guide cylinder gradually drops to 1000 ℃ from 1400 ℃, the temperature gradually drops along with the stretching of the crystal bar, vacancies and interstitial silicon diffuse, point defects are formed along with the temperature drop, when the temperature reaches about 1000 ℃, supersaturated point defects are separated out to form micro defects, the graphite guide cylinder reduces the cooling rate of the crystal bar, the temperature is stabilized, the residence time of the crystal bar in the graphite guide cylinder at 650-800 ℃ is prolonged, the time of forming oxygen precipitation and nucleating formation of the oxygen precipitation of the micro defects in the crystal bar is prolonged, and the BMD of the crystal bar is further prolonged.
Further, the method also comprises the step of adjusting the temperature of the single crystal furnace along with the change of the length of the isodiametric crystal bar when the isodiametric crystal bar is in the same diameter.
Further, when the equal diameter is 0-200mm, the temperature is gradually reduced along with the increase of the length of the equal diameter crystal bar, and when the equal diameter is more than 200mm, the temperature is gradually increased along with the increase of the length of the crystal bar at the equal diameter stage, so that the crystallization rate is improved due to the equal diameter temperature.
A single crystal ingot is pulled by the method for improving the BMD of boron-doped single crystal silicon to obtain the ingot, and the BMD of the ingot reaches 1E 9ea/cm 3 The above.
Embodiment one:
the single crystal furnace shown in fig. 1 is used, so that the temperature in a graphite guide cylinder is increased to 650-800 ℃, the equal diameter is pulled according to an original condition temperature curve shown in fig. 3, after a crystal bar is obtained, the crystal bar is subjected to roller grinding, cutting and slicing, the BMD number of a silicon wafer is detected, the BMD number of the silicon wafer is shown in fig. 4, and the crystallization rate of the crystal bar is shown in fig. 5.
Embodiment two:
the single crystal furnace shown in fig. 1 is used, the temperature in a graphite guide cylinder is increased to 650-800 ℃, the temperature in the single crystal furnace is adjusted in the constant diameter stage according to the original condition shown in fig. 3 and a preset temperature curve with a water cooling jacket removed, crystal pulling is carried out, after a crystal bar is obtained, the crystal bar is subjected to roller grinding, cutting and slicing, the BMD number of a silicon wafer is detected, the BMD number of the silicon wafer is shown in fig. 4, and the crystal yield of the crystal bar is shown in fig. 5.
Comparative example one:
using the single crystal furnace shown in fig. 2, installing a water cooling screen at the original graphite thermal screen position, pulling crystal according to the original condition temperature curve shown in fig. 3 in an equal diameter mode to obtain a crystal bar, performing roll grinding, cutting and slicing on the crystal bar, detecting the BMD number of the silicon wafer, wherein other conditions are the same as those in the first embodiment, the BMD number of the silicon wafer is shown in fig. 4, and the crystal yield of the crystal bar is shown in fig. 5.
In fig. 4 and 5, the initial conditions refer to the results obtained in comparative example one, the initial conditions+removal of the water jacket refer to the results obtained in example one, and the initial conditions+removal of the water jacket (matching the isodiametric temperature) refer to the results obtained in example two.
As is clear from the above results, if the crystal is pulled by changing the structure of the single crystal furnace alone, the BMD of the ingot is increased to 1.00E+09ea/cm 3 As described above, however, the crystal yield of the ingot is reduced, and when pulling is performed by the single crystal furnace shown in fig. 1 in combination with a predetermined temperature profile, the BMD of the ingot is increased, and the crystal yield of the ingot is not affected.
The foregoing disclosure is illustrative of the preferred embodiments of the present invention, and is not to be construed as limiting the scope of the invention, as it is understood by those skilled in the art that all or part of the above-described embodiments may be practiced with equivalents thereof, which fall within the scope of the invention as defined by the appended claims.
Claims (8)
1. A single crystal furnace for improving boron-doped single crystal silicon BMD is characterized in that: comprises a furnace body, a quartz crucible positioned in the furnace body and a temperature stabilizing componentThe temperature stabilizing component comprises a heat shield and a graphite guide cylinder, the quartz crucible, the heat shield and the graphite guide cylinder are coaxial, the heat shield is positioned above the quartz crucible, the graphite guide cylinder is positioned above the heat shield, the heat shield is connected with the furnace body, the graphite guide cylinder is connected with the upper part of the furnace body, when a crystal bar enters the graphite guide cylinder through the heat shield, the graphite guide cylinder stabilizes the temperature to enable the BMD to have sufficient time for nucleation and growth, and the BMD of boron doped monocrystalline silicon reaches 1E 9ea/cm 3 The above.
2. The single crystal furnace for improving BMD of boron doped single crystal silicon according to claim 1, wherein: the graphite guide cylinder stabilizes the temperature at 650-800 ℃.
3. The single crystal furnace for improving BMD of boron doped single crystal silicon according to claim 1, wherein: the heat shield reduces the temperature of the ingot to below 1000 ℃.
4. A method for improving boron-doped monocrystalline silicon BMD is characterized by comprising the following steps: drawing with the single crystal furnace for increasing boron doped single crystal silicon BMD of any one of claims 1-3, comprising the steps of:
s1: placing the boron-doped polycrystalline silicon in a quartz crucible for melting, and lowering a seed crystal to draw a monocrystalline silicon rod;
s2: at constant diameter, the graphite guide cylinder is stabilized at a predetermined temperature to draw the ingot so as to increase BMD.
5. The method for increasing the BMD of a boron doped monocrystalline silicon according to claim 4, wherein: the predetermined temperature is 650 ℃ to 800 ℃.
6. The method for increasing the BMD of a boron doped monocrystalline silicon according to claim 4, wherein: the method also comprises the step of adjusting the temperature of the single crystal furnace along with the change of the length of the isodiametric crystal bar when the isodiametric crystal bar is in the same diameter.
7. The method for increasing BMD of boron doped monocrystalline silicon according to claim 6, wherein: the temperature gradually decreases with the increase of the length of the isodiametric crystal bar when the isodiametric diameter is 0-200mm, and gradually increases with the increase of the length of the crystal bar at the isodiametric stage above the isodiametric diameter of 200.
8. A single crystal ingot, characterized by: drawing by the method for improving boron-doped monocrystalline silicon BMD as defined in any one of claims 4-7 to obtain a crystal rod, wherein the BMD of the crystal rod reaches 1E 9ea/cm 3 The above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311138351.4A CN117144461A (en) | 2023-09-05 | 2023-09-05 | Single crystal furnace and method for improving boron-doped single crystal silicon BMD and single crystal bar |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311138351.4A CN117144461A (en) | 2023-09-05 | 2023-09-05 | Single crystal furnace and method for improving boron-doped single crystal silicon BMD and single crystal bar |
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| CN117144461A true CN117144461A (en) | 2023-12-01 |
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| CN202311138351.4A Pending CN117144461A (en) | 2023-09-05 | 2023-09-05 | Single crystal furnace and method for improving boron-doped single crystal silicon BMD and single crystal bar |
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2023
- 2023-09-05 CN CN202311138351.4A patent/CN117144461A/en active Pending
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