CN117133833B - Spectrum detector chip, preparation method thereof and spectrum detector - Google Patents

Spectrum detector chip, preparation method thereof and spectrum detector Download PDF

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CN117133833B
CN117133833B CN202311359333.9A CN202311359333A CN117133833B CN 117133833 B CN117133833 B CN 117133833B CN 202311359333 A CN202311359333 A CN 202311359333A CN 117133833 B CN117133833 B CN 117133833B
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quantum dot
layer
spectrum
electrode layer
spectrum detector
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CN117133833A (en
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郝群
唐鑫
魏志鹏
蔡红星
邢希达
陈梦璐
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Shandong North Optical & Electronic Co ltd
Changchun University of Science and Technology
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Shandong North Optical & Electronic Co ltd
Changchun University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract

A spectrum detector chip, a preparation method thereof and a spectrum detector relate to the technical field of spectrum detection and solve the problems of complex structure, high cost and limited detection wave band of the existing spectrum detector. The spectrum detector chip comprises a basal layer, a bottom electrode layer, an infrared quantum dot layer and a top electrode layer; the bottom electrode layer is arranged on the basal layer and consists of a plurality of bottom electrodes arranged in an array; the thickness of the infrared quantum dot layer increases gradually from one end to the other end; the top electrode layer is covered on the infrared quantum dot layer. Processing a bottom electrode layer on the substrate layer by adopting an electron beam evaporation plating, magnetron sputtering or thermal evaporation coating mode; immersing in the quantum dot reaction solution, heating to a specific temperature, lifting the detector in the synthesis process, and finally evaporating the solvent to form an infrared quantum dot layer; and covering a top electrode layer above the infrared quantum dot layer to obtain the spectrum detector chip.

Description

Spectrum detector chip, preparation method thereof and spectrum detector
Technical Field
The invention relates to the technical field of spectrum detection, in particular to a spectrum detector chip, a preparation method thereof and a spectrum detector.
Background
Light can be classified into visible light (0.4 μm to 0.8 μm), near infrared (0.7 μm to 1.1 μm), short wave infrared (1.1 μm to 2.5 μm), medium wave infrared (3 μm to 5 μm) and long wave infrared (8 μm to 12 μm) according to wavelength. The photoelectric detector is mainly used for converting optical signals into electric signals, and further realizing quantitative measurement, analysis and imaging of infrared rays. Among them, the spectral detector is used for spectral information of substances, which plays an important role in various fields including astronomy, physics, chemistry, biomedicine, environmental monitoring, and the like. First, the spectrum detector is widely used in astronomy for researching interplanetary substances, planet atmosphere, star evolution and the like, and important information such as composition, temperature, speed and the like of a celestial body can be known by analyzing spectrum of celestial body radiation. In addition, in the field of physics, spectrum detectors are used to study the structure and properties of atoms, molecules and solid materials, and by analyzing the spectrum of a substance, information such as the energy level structure, vibration mode and the like of atoms and molecules can be deduced, so that the nature of the substance is known in depth. In chemical analysis, by measuring the spectrum of a substance, information about the composition, concentration, structure, etc. of the substance can be determined, and more commonly include infrared spectrum, ultraviolet-visible spectrum, mass spectrum, etc. In the biomedical field, spectroscopic detectors are widely used for analysis and diagnosis, for example, infrared spectroscopy can be used to detect molecular changes in cells, tissues and body fluids, thereby enabling diagnosis of early cancers. Plays an important role in environmental monitoring, and by measuring spectra in the atmosphere, water and soil, the type and concentration of pollutants can be analyzed, thereby evaluating environmental quality and monitoring environmental changes.
The traditional spectrum detector or spectrum imaging system generally adopts an external narrow-band filter or grating light splitting mode to select wave bands, so that the device or system is large in size and complex in structure. In addition, most of the existing infrared detectors adopt materials such as indium gallium arsenic, tellurium cadmium mercury, indium antimonide, and second-class superlattice which are grown by molecular beam epitaxy. The material adjusts the detection wave band by adjusting the proportion of molecular elements, has high preparation cost and limits the application of the material in the civil field.
In recent years, infrared colloid quantum dot detectors are also applied, but the existing detectors all adopt a preparation method of 'first synthesis and then film formation', and only infrared quantum dots with one band gap can be integrated on a single device substrate by utilizing liquid phase processing technologies such as dripping coating, spin coating and the like, so that the detection band range is greatly limited, and spectrum detection cannot be realized.
Disclosure of Invention
In order to solve the problems of the existing spectrum detector, the invention provides a spectrum detector chip, a preparation method thereof and a spectrum detector.
The technical scheme of the invention is as follows:
a spectrum detector chip comprises a basal layer, a bottom electrode layer, an infrared quantum dot layer and a top electrode layer;
the bottom electrode layer is arranged on the basal layer and consists of a plurality of bottom electrodes arranged in an array; the thickness of the infrared quantum dot layer increases gradually from one end to the other end; the top electrode layer covers the infrared quantum dot layer.
Preferably, the substrate layer is a silicon wafer, a sapphire wafer, or a readout circuit board with an amplifying circuit.
Preferably, the bottom electrode is made of conductive oxide, and the thickness of the bottom electrode is 5 nm-100 nm.
Preferably, the top electrode layer comprises a metal and a conductive oxide.
Preferably, the thickness of the top electrode is 5 nm-10 nm, and the light transmittance of the top electrode is not lower than 80%.
Preferably, the infrared quantum dot layer comprises mercury telluride, lead sulfide, lead selenide, or cadmium telluride material.
Preferably, the thickness of the infrared quantum dot layer is 400-1000 nm.
The invention also provides a preparation method of the spectrum detector chip, which comprises the following steps:
processing a bottom electrode layer on the substrate layer by adopting an electron beam evaporation plating, magnetron sputtering or thermal evaporation coating mode;
immersing the processed substrate layer in a quantum dot reaction solution, heating the solution to a specific temperature, and starting quantum dot synthesis; lifting the detector in the synthesis process, and evaporating the solvent to form an infrared quantum dot layer after the detector leaves the reaction solution;
and covering a top electrode layer above the infrared quantum dot layer by adopting an electron beam evaporation, magnetron sputtering or thermal evaporation coating mode to obtain the spectrum detector chip.
Preferably, the concentration of the quantum dot solution is 20 mg/mL-50 mg/mL, the specific temperature is 60 ℃ to 150 ℃, and the pulling speed is 0.1 mm/min-10 mm/min.
The invention also provides a spectrum detector, which comprises the spectrum detector chip.
Compared with the prior art, the invention has the following specific beneficial effects:
1. the spectrum detection chip provided by the invention has the advantages of simple and compact structure, small volume and the like, the spectrum selection precision reaches +/-1 mu m, and the polarization selectivity or extinction ratio is 1:10 to 1:1000, and at the same time, the photocurrent signal strength is increased by 2-10 times under the specific wavelength and polarization direction.
2. The method provided by the invention has the advantages that the preparation cost is low, the batch production can be realized, the infrared quantum dot layer is prepared by adopting a pulling method and film formation while synthesis is performed, the quantum dot infrared detector with energy band gradient is finally obtained, the band gap is sequentially reduced (1.24 eV-0.1 eV) from left to right, the size of the quantum dot in the reaction solution is gradually increased in the slow pulling process, the detection wavelength of the formed quantum dot film is increased, the preparation of quantum dot films with different band gaps is realized on the same detector substrate, the infrared spectrum within the range of 1-15 mu m can be detected by adopting a single detector, and the system volume and cost are greatly reduced.
Drawings
FIG. 1 is a schematic diagram of the spectrum sensor chip in embodiment 1;
fig. 2 is a schematic diagram of the quantum dot film synthesis process described in example 8.
Detailed Description
In order to make the technical solution of the present invention clearer, the technical solution of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it should be noted that the following embodiments are only used for better understanding of the technical solution of the present invention, and should not be construed as limiting the present invention.
Example 1.
The embodiment provides a spectrum detector chip, which comprises a basal layer, a bottom electrode layer, an infrared quantum dot layer and a top electrode layer;
the bottom electrode layer is arranged on the basal layer and consists of a plurality of bottom electrodes arranged in an array; the thickness of the infrared quantum dot layer increases gradually from one end to the other end; the top electrode layer covers the infrared quantum dot layer.
In the spectrum detection chip provided by the embodiment, the overlapping part of the top electrode and the bottom electrode is a photosensitive area, the discontinuous bottom electrode is arranged on the substrate to separate the photosensitive area, the top electrode is a common electrode, and an external electric field is formed by applying bias voltage between the top electrode and the bottom electrode. When the incident light is absorbed by the quantum dot film, photon energy is excited to generate electrons and holes, and the electrons and the holes are separated by an external electric field to form a photocurrent signal. Because the thicknesses of the quantum dot layers at different positions are different, the band gaps and the absorption ranges are different, and the spectral distribution of the incident light can be converted into the photocurrent response intensity distribution of the detector at different positions, so that the spectral measurement of the incident light is realized.
Compared with the structure form of the externally-added optical filter, the embodiment has the advantages of simple and compact structure, small volume and the like. Compared with the planar electrode, the array type bottom electrode provided by the embodiment can generate a certain plasma resonance effect, so that response light absorption is enhanced, and a photoelectric signal is enhanced. The xenon lamp or the blackbody is used as an infrared light source, the light detector is connected with a source meter to measure dark current and photocurrent, and the output power of the light source is combined to calculate and obtain signal parameters such as light responsivity, external quantum efficiency, specific detection rate and the like. Through testing, the photocurrent signal strength can be increased by 2-10 times under specific wavelength and polarization direction.
The infrared absorption spectrum in the fixed point area is tested by utilizing the infrared absorption spectrum of the micro-area, the spectrum selection precision can be determined according to the absorption cut-off edge, and the spectrum selection precision can reach +/-1 mu m in the embodiment;
the polarization extinction ratio is tested by adding a polarizer on the existing infrared focal plane assembly testing and evaluating system, and the polarizer is closely adhered to a surface source black body and a tested device window to reduce crosstalk caused by stray light entering windows in different polarization directions, so that polarized radiation is obtained for testing. The polarizer needs to adopt a high extinction ratio polaroid, 360-degree rotation scanning is carried out on the polarizer, meanwhile, response values of pixels in different polarization directions are tested, and the extinction ratio is calculated through the ratio of the maximum value and the minimum value corresponding to different polarization angles. Through testing and calculation, the polarization selectivity or extinction ratio of the spectrum test chip provided in the embodiment is 1:10 to 1: 1000.
Example 2.
This example is further illustrative of example 1, wherein the substrate layer is a silicon wafer, a sapphire wafer, or a readout circuit board with amplification circuitry.
Example 3.
This embodiment is further illustrated in embodiment 1, where the bottom electrode is made of a conductive oxide, and the conductive oxide may be ITO or FTO, and the bottom electrode has a thickness of 5nm to 100nm.
Example 4.
This embodiment is further illustrative of embodiment 1, wherein the top electrode layer comprises a metal selected from gold, silver, copper, and titanium, and a conductive oxide, which may be ITO or FTO, or the like.
Example 5.
This embodiment is further illustrated in embodiment 1, where the thickness of the top electrode is 5nm to 10nm, and the light transmittance of the top electrode is not less than 80%.
Example 6.
This example is a further illustration of example 1, wherein the infrared quantum dot layer is a mercury telluride, lead sulfide, lead selenide, or cadmium telluride material.
Example 7.
This embodiment is further illustrated in embodiment 1, where the thickness of the infrared quantum dot layer is 400nm to 1000nm.
Example 8.
This embodiment provides a method for manufacturing a spectrum detector chip as described in any one of embodiments 1 to 7, the method comprising:
processing a bottom electrode layer on the substrate layer by adopting an electron beam evaporation plating, magnetron sputtering or thermal evaporation coating mode;
immersing the processed substrate layer in a quantum dot reaction solution, heating the solution to a specific temperature, and starting quantum dot synthesis; lifting the detector in the synthesis process, and evaporating the solvent to form an infrared quantum dot layer after the detector leaves the reaction solution;
and covering a top electrode layer above the infrared quantum dot layer by adopting an electron beam evaporation, magnetron sputtering or thermal evaporation coating mode to obtain the spectrum detector chip.
In the embodiment, the infrared detector is prepared by using the colloidal quantum dots, so that the preparation cost is low, and the infrared detector can be prepared in batches. The infrared quantum dot layer is prepared by adopting a pulling method and a method of 'synthesizing and forming a film', so that the quantum dot infrared detector with energy band gradient is obtained, the band gap is sequentially reduced (1.24 eV-0.1 eV) from left to right, the size of the quantum dot in the reaction solution is gradually increased in the slow pulling process, the detection wavelength of the formed quantum dot film is increased, and the corresponding absorption cut-off wavelength is 1-15 mu m. Therefore, the method realizes the preparation of quantum dot films with different band gaps on the same detector substrate, and can detect infrared spectrum within the range of 1-15 mu m by adopting a single detector, thereby greatly reducing the volume and cost of the system.
Example 9.
This example is further illustrative of example 8, wherein the concentration of the quantum dot solution is 20 mg/mL-50 mg/mL, the specific temperature is 60 ℃ to 150 ℃, and the pulling speed is 0.1 mm/min-10 mm/min.
Example 10.
This embodiment provides a spectral detector comprising a spectral detector chip as described in any of embodiments 1-7.
The foregoing is only illustrative of the present invention, and the present invention is not limited to the embodiments described above, and any changes or substitutions that are easily contemplated by those skilled in the art within the scope of the present invention are intended to be encompassed within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (10)

1. The spectrum detector chip is characterized by comprising a basal layer, a bottom electrode layer, an infrared quantum dot layer and a top electrode layer;
the bottom electrode layer is arranged on the basal layer and consists of a plurality of bottom electrodes arranged in an array; the thickness of the infrared quantum dot layer increases gradually from one end to the other end; the top electrode layer covers the infrared quantum dot layer.
2. The spectral detector chip of claim 1, wherein the substrate layer is a silicon wafer, a sapphire wafer, or a readout circuit board with amplification circuitry.
3. The spectral detector chip of claim 1, wherein the bottom electrode is made of a conductive oxide, and the bottom electrode has a thickness of 5nm to 100nm.
4. The spectral detector chip of claim 1, wherein the top electrode layer comprises a metal and a conductive oxide.
5. The spectrum sensor chip of claim 1, wherein the thickness of the top electrode is 5nm to 10nm, and the light transmittance of the top electrode is not less than 80%.
6. The spectral detector chip of claim 1, wherein the infrared quantum dot layer comprises mercury telluride, lead sulfide, lead selenide, or cadmium telluride material.
7. The spectrum detector chip of claim 1, wherein the thickness of the infrared quantum dot layer is 400nm to 1000nm.
8. A method for manufacturing a spectrum detector chip as claimed in any one of claims 1 to 7, wherein the method comprises the steps of:
processing a bottom electrode layer on the substrate layer by adopting an electron beam evaporation plating, magnetron sputtering or thermal evaporation coating mode;
immersing the processed substrate layer in a quantum dot reaction solution, heating the solution to a specific temperature, and starting quantum dot synthesis; lifting the detector in the synthesis process, and evaporating the solvent to form an infrared quantum dot layer after the detector leaves the reaction solution;
and covering a top electrode layer above the infrared quantum dot layer by adopting an electron beam evaporation, magnetron sputtering or thermal evaporation coating mode to obtain the spectrum detector chip.
9. The method for manufacturing a spectrum detector chip according to claim 8, wherein the concentration of the quantum dot solution is 20mg/mL to 50mg/mL, the specific temperature is 60 ℃ to 150 ℃, and the pulling speed is 0.1mm/min to 10mm/min.
10. A spectrum detector, characterized in that the spectrum detector comprises a spectrum detector chip as claimed in any one of claims 1 to 7.
CN202311359333.9A 2023-10-20 2023-10-20 Spectrum detector chip, preparation method thereof and spectrum detector Active CN117133833B (en)

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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101279761A (en) * 2008-05-27 2008-10-08 中南大学 Preparation of cupric oxide doped with titanium dioxide gradient film
CN103000742A (en) * 2012-12-04 2013-03-27 南京大学 Solar battery with band gap gradual changing silicon quantum dot multilayer film and production method thereof
CN107275421A (en) * 2017-06-07 2017-10-20 华中科技大学 A kind of quantum dot light electric explorer and preparation method thereof
CN109161874A (en) * 2018-08-21 2019-01-08 四川大学 A kind of structure and preparation method of antireflection film
CN109950371A (en) * 2019-03-13 2019-06-28 深圳市洲明科技股份有限公司 Ultraviolet LED epitaxial structure and preparation method thereof
CN110573956A (en) * 2017-04-27 2019-12-13 株式会社Lg化学 Electrochromic film
CN111969072A (en) * 2020-08-17 2020-11-20 南方科技大学 Photoelectric detector based on quantum dot grating enhancement, preparation method thereof and adjustment method of detection light
CN113659021A (en) * 2021-07-16 2021-11-16 浙江大学 Spectrum detection device based on regulation and control of thickness of absorption layer of semiconductor material
CN114512569A (en) * 2021-11-25 2022-05-17 北京师范大学 Gradient doped wide-spectrum self-powered photoelectric detector
CN114551489A (en) * 2022-02-11 2022-05-27 中国科学院上海技术物理研究所 Short wave infrared spectrum detector integrating light splitting and detection
CN115513315A (en) * 2022-09-14 2022-12-23 中国科学院上海技术物理研究所 High-saturation-threshold mercury cadmium telluride detector chip and preparation method thereof
CN115588701A (en) * 2022-10-27 2023-01-10 电子科技大学 Novel infrared detector with absorption region and preparation method thereof
CN115802806A (en) * 2022-12-19 2023-03-14 固安翌光科技有限公司 Organic light-emitting structure and light-emitting device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704209B2 (en) * 2009-08-18 2014-04-22 The United States Of America As Represented By The Secretary Of The Army Photodetectors using resonance and method of making
US11894399B2 (en) * 2021-03-02 2024-02-06 Wisconsin Alumni Research Foundation Compact hyperspectral spectrometers based on semiconductor nanomembranes

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101279761A (en) * 2008-05-27 2008-10-08 中南大学 Preparation of cupric oxide doped with titanium dioxide gradient film
CN103000742A (en) * 2012-12-04 2013-03-27 南京大学 Solar battery with band gap gradual changing silicon quantum dot multilayer film and production method thereof
CN110573956A (en) * 2017-04-27 2019-12-13 株式会社Lg化学 Electrochromic film
CN107275421A (en) * 2017-06-07 2017-10-20 华中科技大学 A kind of quantum dot light electric explorer and preparation method thereof
CN109161874A (en) * 2018-08-21 2019-01-08 四川大学 A kind of structure and preparation method of antireflection film
CN109950371A (en) * 2019-03-13 2019-06-28 深圳市洲明科技股份有限公司 Ultraviolet LED epitaxial structure and preparation method thereof
CN111969072A (en) * 2020-08-17 2020-11-20 南方科技大学 Photoelectric detector based on quantum dot grating enhancement, preparation method thereof and adjustment method of detection light
CN113659021A (en) * 2021-07-16 2021-11-16 浙江大学 Spectrum detection device based on regulation and control of thickness of absorption layer of semiconductor material
CN114512569A (en) * 2021-11-25 2022-05-17 北京师范大学 Gradient doped wide-spectrum self-powered photoelectric detector
CN114551489A (en) * 2022-02-11 2022-05-27 中国科学院上海技术物理研究所 Short wave infrared spectrum detector integrating light splitting and detection
CN115513315A (en) * 2022-09-14 2022-12-23 中国科学院上海技术物理研究所 High-saturation-threshold mercury cadmium telluride detector chip and preparation method thereof
CN115588701A (en) * 2022-10-27 2023-01-10 电子科技大学 Novel infrared detector with absorption region and preparation method thereof
CN115802806A (en) * 2022-12-19 2023-03-14 固安翌光科技有限公司 Organic light-emitting structure and light-emitting device

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