CN117117045A - Light-emitting chip manufacturing method and light-emitting chip - Google Patents

Light-emitting chip manufacturing method and light-emitting chip Download PDF

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Publication number
CN117117045A
CN117117045A CN202210532764.XA CN202210532764A CN117117045A CN 117117045 A CN117117045 A CN 117117045A CN 202210532764 A CN202210532764 A CN 202210532764A CN 117117045 A CN117117045 A CN 117117045A
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China
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type layer
light
layer
manufacturing
doping concentration
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韩平
黄志强
庄文荣
孙明
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Dongguan HCP Technology Co Ltd
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Dongguan HCP Technology Co Ltd
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Priority to CN202210532764.XA priority Critical patent/CN117117045A/en
Publication of CN117117045A publication Critical patent/CN117117045A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a manufacturing method of a light-emitting chip, which comprises the steps of growing a first N-type layer with first doping concentration, a second N-type layer with second doping concentration, a light-emitting layer and an epitaxial layer of a P-type layer on a growth substrate to obtain a light-emitting structure, wherein the first doping concentration is larger than the second doping concentration; then stripping the growth substrate to expose the first N-type layer; then, the first N-type layer and the electrolyte are subjected to electrochemical reaction, so that a plurality of holes are formed in the first N-type layer, and in the process of electrochemical reaction of the first N-type layer with the first doping concentration and the electrolyte, the second N-type layer with the second doping concentration does not react with the electrolyte, so that the second N-type layer can be used as a normal N-type semiconductor layer of the light-emitting chip; the plurality of holes are then filled with a color conversion material. The invention integrates the color conversion material and the chip structure, has higher integration, simpler manufacturing process and lower cost.

Description

Light-emitting chip manufacturing method and light-emitting chip
Technical Field
The invention relates to the technical field of display, in particular to a manufacturing method of a light-emitting chip and the light-emitting chip.
Background
Micro-LEDs have the characteristics of high brightness, fast response, and long life, and are known as the final form of the display product. The AlGaInP red LED chip has high cost due to complex manufacturing process. The quantum dot material has the characteristics of good photoluminescence stability, narrow half-peak width, high color gamut and the like, and the blue light LED is used for exciting the quantum dot to generate red light, so that the quantum dot material has great economic and technological advantages. In addition, the light-emitting wavelength is stable, the utilization rate of the chip can be greatly improved, and the cost is further reduced.
In the prior art, a color conversion structure with quantum dots is fixedly arranged on the light-emitting surface side of a blue light chip, and blue light emitted by the blue light chip is subjected to light color conversion by utilizing the quantum dots in the color conversion structure so as to emit red light. Because it is difficult to ensure the stability of the combination of the color conversion structure and the blue light chip, the light color conversion effect and the service life are affected.
Disclosure of Invention
The invention aims to provide a manufacturing method of a light-emitting chip with simple manufacturing process and low cost and the light-emitting chip manufactured by the manufacturing method.
In order to achieve the above object, the present invention provides a method for manufacturing a light emitting chip, including:
the light-emitting structure comprises a growth substrate, a first N-type layer with a first doping concentration, a second N-type layer with a second doping concentration, a light-emitting layer and a P-type layer, wherein the first N-type layer, the second N-type layer, the light-emitting layer and the P-type layer are sequentially stacked and grown on the growth substrate, the first doping concentration is larger than the second doping concentration, the first N-type layer with the first doping concentration can electrochemically react with electrolyte, and when the first N-type layer with the first doping concentration and the electrolyte are subjected to electrochemical reaction, the second N-type layer with the second doping concentration does not electrochemically react with the electrolyte;
stripping the growth substrate to expose the first N-type layer;
placing the first N-type layer in the electrolyte, and electrifying to enable the first N-type layer to perform electrochemical reaction with the electrolyte so as to form a plurality of holes in the first N-type layer;
and filling color conversion materials in the holes to obtain the light-emitting chip, wherein the color conversion materials are used for converting exciting light rays emitted by the light-emitting structure from first light colors to second light colors to emit.
In some embodiments, the first N-type layer and the second N-type layer are N-type GaN layers, and the first doping concentration and the second doping concentration are silicon doping concentrations in the first N-type layer and the second N-type layer, respectively.
In some embodiments, the electrolyte is an acid-based electrolyte.
In some embodiments, the light emitting structure further includes a buffer layer grown between the growth substrate and the first N-type layer.
In some embodiments, the providing a light emitting structure includes: growing the buffer layer on the growth substrate by using a metal organic chemical vapor deposition method; growing the first N-type layer on one side of the buffer layer, which is away from the growth substrate, by using a metal organic chemical vapor deposition method; growing the second N-type layer on one side of the first N-type layer, which is away from the buffer layer, by utilizing a metal organic chemical vapor deposition method; growing the light-emitting layer on one side of the second N-type layer, which is away from the first N-type layer, by using a metal organic chemical vapor deposition method; and growing the P-type layer on one side of the light-emitting layer, which is far away from the second N-type layer, by using a metal organic chemical vapor deposition method.
In some embodiments, the growth substrate is directed away from the substrate, the light emitting structure is secured to the substrate, and the growth substrate is peeled off; before fixing the light emitting structure on the substrate, further comprising: and manufacturing a P electrode on one surface of the P-type layer, which is far away from the light-emitting layer.
In some embodiments, the substrate is a metal substrate or a substrate with metal pads; the fixing the light emitting structure on the substrate includes: and welding and fixing the P electrode and the metal structure on the substrate.
In some embodiments, after filling the plurality of holes with the color conversion material, further comprising: and manufacturing an insulating protection layer, wherein the insulating protection layer covers the first N-type layer.
In some embodiments, the light emitting chip manufacturing method further includes: an N electrode is manufactured on one side of the second N type layer, which is away from the first N type layer; the N electrode comprises a first conductive part and a second conductive part which are electrically connected, the first conductive part is electrically connected with the second N-type layer, the second conductive part protrudes out of the insulating protection layer, and the end surface area of the second conductive part for being electrically connected with an external electronic device is larger than that of the first conductive part.
In some embodiments, the fabricating an N electrode on a side of the second N-type layer facing away from the first N-type layer includes: manufacturing the first conductive part on the second N-type layer before manufacturing the insulating protection layer; after the insulating protection layer is manufactured, opening holes in the insulating protection layer to expose the first conductive part; the second conductive portion is fabricated on the first conductive portion.
In order to achieve the above object, the present invention further provides a light emitting chip manufactured by the manufacturing method of the light emitting chip.
According to the manufacturing method of the light-emitting chip, the light-emitting structure is obtained by growing the epitaxial layer comprising the first N-type layer, the second N-type layer, the light-emitting layer and the P-type layer which are gradually far away from the growth substrate and are sequentially stacked, wherein the first doping concentration is higher than the second doping concentration, and the first N-type layer with the first doping concentration can react with electrolyte electrochemically; then stripping the growth substrate to expose the first N-type layer; then, the first N-type layer is placed in electrolyte and electrified, so that the first N-type layer and the electrolyte are subjected to electrochemical reaction, a plurality of holes are formed in the first N-type layer, and in the process of electrochemical reaction between the first N-type layer with the first doping concentration and the electrolyte, the second N-type layer with the second doping concentration is not subjected to electrochemical reaction with the electrolyte, so that the second N-type layer can be used as a normal N-type semiconductor layer of the light-emitting chip; and then, the holes are filled with color conversion materials, excitation light generated by the light-emitting structure is converted from the first light color to the second light color by the color conversion materials, and the color conversion materials can be applied to manufacturing light-emitting chips which are complicated in manufacturing by the prior art, such as red light chips, green light chips and the like, by adopting the light-emitting structure with simple manufacturing procedures, so that the manufacturing process is simplified, and the manufacturing cost is saved. In addition, the invention integrates the color conversion material and the chip structure, and has higher integration. In addition, the etched first N-type layer is of a porous structure, so that the scattering of exciting light rays can be improved, the optical path length is increased, the absorption efficiency of the color conversion material on the exciting light rays is greatly improved, the leakage of the first light color is reduced, and the color purity is improved.
Drawings
Fig. 1 to 15 are schematic process diagrams of a method for manufacturing a light emitting chip according to an embodiment of the invention;
FIG. 16 is a schematic diagram of a light emitting chip made in accordance with an embodiment of the present invention;
fig. 17 is a schematic diagram showing the relationship between the doping concentration of the first N-type layer and the voltage to be applied when the first N-type layer is energized, when the electrolyte is oxalic acid.
Detailed Description
For a detailed description of the contents, construction features, achieved objects and effects of the present invention, a technical solution of the embodiments of the present invention will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The following describes the technical scheme of the embodiment of the present invention in detail with reference to the accompanying drawings:
referring to fig. 1 to 15, a method for manufacturing a light emitting chip according to an embodiment of the invention includes the following steps S1 to S10.
S1, an epitaxial layer 2 is grown on a growth substrate 1, and the epitaxial layer 2 includes a buffer layer 21, an undoped layer 22, a first N-type layer 23 with a first doping concentration, a second N-type layer 24 with a second doping concentration, a light emitting layer 25, and a P-type layer 26, which are sequentially stacked apart from the growth substrate 1, to obtain a light emitting structure capable of generating excitation light, as shown in fig. 3. The first doping concentration is larger than the second doping concentration, the first N-type layer with the first doping concentration can electrochemically react with the electrolyte, and when the first N-type layer with the first doping concentration electrochemically reacts with the electrolyte, the second N-type layer with the second doping concentration does not electrochemically react with the electrolyte.
The growth substrate 1 may be, for example, a sapphire substrate, a gallium nitride substrate, or the like, and the buffer layer 21, the undoped layer 22, the first N-type layer 23, the second N-type layer 24, the light emitting layer 25, the P-type layer 26, or the like may be, for example, a gallium nitride (GaN) layer, or the like.
The light-emitting layer 25 is a MQW layer (multiple quantum well layer).
In growing the epitaxial layer 2 on the growth substrate 1, first, the buffer layer 21 is grown on the growth substrate 1; then, an undoped layer 22 is grown on the side of the buffer layer 21 facing away from the growth substrate 1 (as shown in fig. 1); then, a first N-type layer 23 is grown on the surface of the undoped layer 22 away from the buffer layer 21; next, a second N-type layer 24 is grown on the side of the first N-type layer 23 facing away from the undoped layer 22 (as shown in fig. 2); then, a light-emitting layer 25 is grown on the side of the second N-type layer 24 away from the first N-type layer 23; finally, a P-type layer 26 is grown on the side of the light-emitting layer 25 facing away from the N-type layer 24, and a light-emitting structure is obtained, wherein the light-emitting structure is a light-emitting structure without an electrode, as shown in fig. 3.
In one embodiment, buffer layer 21 is grown on growth substrate 1 using Metal-organic chemical vapor deposition (MOCVD); growing an undoped layer 22 on the side of the buffer layer 21 away from the growth substrate 1 by using a metal organic chemical vapor deposition method; a first N-type layer 23 is grown on the undoped layer 22 at the side away from the buffer layer 21 by using a metal organic chemical vapor deposition method; growing a second N-type layer 24 on the side of the first N-type layer 23, which is away from the undoped layer 22, by using a metal organic chemical vapor deposition method; growing a light-emitting layer 25 on the side, away from the first N-type layer 23, of the second N-type layer 24 by using a metal organic chemical vapor deposition method; a P-type layer 26 is grown on the side of the light-emitting layer 25 facing away from the second N-type layer 24 by metal organic chemical vapor deposition.
Of course, in some embodiments, the buffer layer 21, the undoped layer 22, the first N-type layer 23, and the second N-type layer 24 may be sequentially grown on the growth substrate 1 by, for example, a hydride vapor phase epitaxy (Hydride Vapor Phase Epitaxy, HVPE), and the light emitting layer 25 and the P-type layer 26 may be grown by a metal organic chemical vapor deposition method. The buffer layer 21 and the undoped layer 22 may be sequentially grown on the growth substrate 1 by, for example, hydride vapor phase epitaxy (Hydride Vapor Phase Epitaxy, HVPE), and the first N-type layer 23, the second N-type layer 24, the light emitting layer 25, and the P-type layer 26 may be grown by metal organic chemical vapor deposition.
In the above embodiment, before the first N-type layer 22 is grown, the buffer layer 21 is grown on the growth substrate 1, then the undoped layer 22 is grown on the side of the buffer layer 21 away from the growth substrate 1, and then the first N-type layer 23, the second N-type layer 24, the light emitting layer 25 and the P-type layer 26 are grown on the side of the undoped layer 22 away from the buffer layer 21 in sequence, so that the buffer layer 21 can relieve the thermal stress between other layers and the growth substrate 1. Whereas undoped layer 22 may achieve a flatter plane, resulting in a more planar first N-type layer 23.
Of course, in some embodiments, the buffer layer 21 and/or the undoped layer 22 may be not grown, for example, after the buffer layer 21 is grown on the growth substrate 1, the first N-type layer 23 is grown directly on the side of the buffer layer 21 facing away from the growth substrate 1. For another example, the first N-type layer 23 is grown directly on the growth substrate 1.
S2, a P electrode 27 is manufactured on one surface of the P type layer 26, which is away from the light emitting layer 25, and a light emitting structure provided with the P electrode 27 is obtained, as shown in FIG. 4.
A conductive metal layer may be deposited on the surface of the P-type layer 26 facing away from the light emitting layer 25, for example, by vapor deposition, to serve as the P-electrode 27. The P-electrode 27 may be composed of one layer of metal or may be composed of multiple layers of metal. The P electrode 27 may be one metal, such as Au, sn, cr, al, ti, mo, or may be a eutectic alloy of a plurality of metals.
S3, enabling the growth substrate 1 to deviate from the base plate 3, and fixing the light-emitting structure provided with the P electrode 27 on the base plate 3, as shown in FIG. 5; then, the growth substrate 1, the buffer layer 21, and the undoped layer 22 are removed, exposing the first N-type layer 23, as shown in fig. 6.
The substrate 3 is a metal substrate or a substrate with metal pads, and when the light emitting structure provided with the P electrode 27 is fixed on the substrate 3, the P electrode 27 is welded and fixed with the metal structure on the substrate 3. By the light emitting chip obtained after the subsequent steps S4 to S10, the metal structure on the substrate 3 is used as an external pin, and by connecting the metal structure of the substrate 3 of the light emitting chip with an external electronic device such as a circuit board, the electrical connection between the P electrode 27 of the light emitting chip and the external electronic device is realized.
The growth substrate 1 may be stripped by a laser stripping technique or the like, and then the buffer layer 21 and the undoped layer 22 are removed by a dry etching technique, so that an epitaxial structure in which the first N-type layer 23 is exposed after the growth substrate 1, the buffer layer 21 and the undoped layer 22 are removed is finally obtained, and a schematic diagram of the epitaxial structure after the placement direction is adjusted is shown in fig. 7.
S4, etching the epitaxial structure shown in fig. 7 to form a plurality of core grains connected by the substrate 3, and the obtained structure is shown in fig. 8.
By dividing the epitaxial structure into a plurality of core grains in advance, damage to the color conversion material 5 during etching can be avoided as compared to performing etching division after filling the color conversion material 5.
S5, the first N-type layer 23 is placed in the electrolyte, and is electrified, so that the first N-type layer 23 and the electrolyte are subjected to electrochemical reaction, and a plurality of holes 4 are formed in the first N-type layer 23, as shown in FIG. 9. In the process of the electrochemical reaction between the first N-type layer 23 and the electrolyte, the second N-type layer 24 with the second doping concentration does not react with the electrolyte, so that the second N-type layer 24 can be used as a normal N-type layer of the light emitting chip.
Wherein the holes 4 are nano-scale holes, and the holes 4 are irregular structures with huge quantity. The electrolyte is an acid-based electrolyte. The electrolyte may be oxalic acid electrolyte, HF electrolyte, HCL electrolyte, or the like. In other embodiments, the electrolyte may be a base electrolyte, such as KOH.
In one embodiment, the first N-type layer 23 and the second N-type layer 24 are N-type GaN layers, and the first doping concentration and the second doping concentration are silicon doping concentrations in the first N-type layer 23 and the second N-type layer 24, respectively. The silicon (Si) can perform electrochemical reaction, has good stability, and can combine the GaN epitaxial process and the electrochemical reaction effect by doping the silicon (Si).
The relationship between the doping concentration of the first N-type layer 23 and the voltage to be applied during the power-on is shown in fig. 17, as long as the doping concentration of the first N-type layer 23 and the voltage to be applied during the power-on fall within the region S, and the doping concentration of the second N-type layer 24 falls within the lower left region of the region S when the voltage to be applied during the power-on falls within the region S. The porosity and pore size of the pores 4 can be controlled by controlling the doping concentration of the first N-type layer 23 and the voltage applied when energized. In some embodiments, the doping concentration of the first N-type layer 23 is 1×10 to the power of 19 per cubic centimeter to 1×10 to the power of 20 per cubic centimeter, and the power-on voltage is 2V to 5V. The doping concentration of the second N-type layer 24 is less than 5 x 10 to the power of 18 per cubic centimeter.
S6, etching away part of the first N-type layer 23 to expose the second N-type layer 24, as shown in FIG. 10; then, a first conductive portion 281 of the N electrode 28 is formed on the exposed portion of the second N-type layer 24, as shown in fig. 11.
A conductive metal layer may be plated on the exposed portion of the second N-type layer 24, for example, by vapor deposition, to serve as the first conductive portion 281 of the N-electrode 28. The first conductive portion 281 of the N electrode 28 may include one layer of metal or may include multiple layers of metal. The first conductive portion 281 may be one metal such as Au, sn, cr, al, ti, mo or a eutectic alloy formed of a plurality of metals.
S7, the holes 4 are filled with a color conversion material 5, as shown in fig. 12, where the color conversion material 5 is used to convert excitation light emitted by the light emitting structure from a first light color to a second light color for emission.
The color conversion material 5 may be any material capable of filling in the holes 4 and effecting conversion of the first light color into the second light color, such as quantum dots, phosphors, etc. The second light color and the first light color are not limited to a specific light color, and in some embodiments, the second light color is red light, and the first light color is blue light; in some embodiments, the second light color may be red light, the first light color may be green light, and the second light color may be other light colors besides red light.
The color conversion material 5 may be filled by IJP (Ink Jet printing), EHD (Electro-hydro Dynamic Jet Printing, electrohydrodynamic Jet printing), SIJ (Super-fine inkjet printing, ultra-fine inkjet printing), spin-coating, aerosol Jet (Aerosol Jet printing), spray (atomized Spray) or the like.
S8, the surface of the structure obtained in step S7 is covered with an insulating protective layer 6, and the insulating protective layer 6 covers the first conductive portion 281 of the N electrode 28, the first N-type layer 23, and the sides of each core particle, as shown in fig. 13. The insulating protective layer 6 can isolate the contact of water vapor and oxygen with the color conversion material 5, and can prevent the leakage of the manufactured light emitting chip.
The insulating protective layer 6 may be obtained using ALD (Atomic layer deposition) and/or CVD (Chemical Vapor Deposition) deposition. The insulating protective layer 6 may be, for example, a SiN insulating protective layer, a SiO insulating protective layer, an AlO insulating protective layer, an AlN insulating protective layer, or the like, and the insulating protective layer 6 may be a single-layer structure or a multilayer structure, and the multilayer structure may be a multilayer structure of different materials as long as it can well isolate moisture and oxygen to protect the color conversion material 5, and is nonconductive.
S9, holes are formed in the insulating protection layer 6, and the first conductive portions 281 are exposed, as shown in FIG. 14; then, a second conductive portion 282 is formed on the first conductive portion 281, and the second conductive portion 282 and the first conductive portion 281 constitute an N electrode 28, as shown in fig. 15. The second conductive portion 282 protrudes from the insulating protection layer 6, and an end surface area of the second conductive portion 282 for electrical connection is larger than an end surface area of the first conductive portion 281, so that the second conductive portion 282 is convenient to be welded and fixed with an external electronic device.
A conductive metal layer may be deposited on the first conductive portion 281 by vapor deposition or the like, for example, to serve as the second conductive portion 282. The second conductive portion 282 may include one layer of metal or may include multiple layers of metal. The second conductive portion 282 may be one of metals such as Au, sn, cr, al, ti, mo, or may be a eutectic alloy of a plurality of metals.
S10, thinning the obtained light-emitting structure filled with the color conversion material 5, and scribing the light-emitting structure apart to obtain single light-emitting chips. In some embodiments, the resulting light emitting chip is shown in fig. 16.
As shown in fig. 16, the light emitting chip includes an insulating protection layer 101, a first N-type layer 102, a second N-type layer 103, a light emitting layer 104, a P-type layer 105, a P-electrode 106, a substrate 107, and an N-electrode 108, where the first N-type layer 102, the second N-type layer 103, the light emitting layer 104, the P-type layer 105, the P-electrode 106, and the substrate 107 are sequentially disposed from top to bottom, the first N-type layer 102 is provided with a color conversion material 5, and excitation light emitted by the chip structure is converted into other light colors by the color conversion material 5 to emit. The N electrode 108 is disposed on the second N-type layer 103, and includes a first conductive portion 1081 electrically connected to the second N-type layer 103 and a second conductive portion 1082 electrically connected to the first conductive portion 1081, where the insulating protection layer 101 encapsulates the first N-type layer 102, the second N-type layer 103, the light emitting layer 104, the P-type layer 105, and the P electrode 106. The insulating protection layer 101 is perforated at a position opposite to the first conductive portion 1081, the second conductive portion 1082 protrudes from the insulating protection layer 101, and the second conductive portion 1082 has a connection end face larger than that of the first conductive portion 1081 so as to be better connected and fixed with an external electronic device or the like.
In the embodiment shown in fig. 16, the opening of the insulating protection layer 101 is tapered, and the second conductive portion 1082 includes a tapered portion 10821 disposed in the opening and a rectangular portion 10822 protruding from the insulating protection layer 101, wherein an end surface area of the tapered portion 10821 near one end of the first conductive portion 1081 is smaller than an end surface area near one end of the rectangular portion 10822.
In the embodiment shown in fig. 1 to 15, the P-electrode 27 is fabricated on the side of the P-type layer 26 facing away from the light-emitting layer 25, and then the light-emitting structure provided with the P-electrode 27 is fixed on the substrate 3, or in other embodiments, the light-emitting structure without the P-electrode 27 may be directly fixed on the substrate 3, and in the subsequent steps, the P-electrode 27 is fabricated. Similarly, the epitaxial structure may be not etched first, that is, after step S3 is performed, step S4 is skipped, step S5 is directly performed, and electrochemical reaction is performed to form a plurality of holes 4 in the first N-type layer 23. Similarly, step S6 may be skipped, and after the first N-type layer 23 forms the plurality of holes 4, the process proceeds directly to step S7 to fill the color conversion material 5.
In some embodiments, some of the steps may also be omitted, e.g., steps S8-S9 are not performed.
In the above-described embodiment, the light emitting structure is a wafer that can be manufactured into a plurality of light emitting chips by dicing or the like, and in other embodiments, the light emitting structure may also be a structure corresponding to that used for manufacturing a light emitting chip.
In summary, according to the method for manufacturing a light emitting chip provided by the present invention, a light emitting structure is obtained by growing an epitaxial layer 2 including a first N-type layer 23, a second N-type layer 24, a light emitting layer 25 and a P-type layer 26, which are sequentially stacked and have a first doping concentration gradually far from the growth substrate 1, on the growth substrate 1, wherein the first doping concentration is greater than the second doping concentration, and the first N-type layer 23 having the first doping concentration can electrochemically react with an electrolyte; then, the growth substrate 1 is separated from the substrate 3, the light-emitting structure is fixed on the substrate 3, and the growth substrate 1 is peeled off to expose the first N-type layer 23; then, the first N-type layer 23 is placed in an electrolyte and is electrified, so that the first N-type layer 23 and the electrolyte are subjected to electrochemical reaction, a plurality of holes 4 are formed in the first N-type layer 23, and in the process of electrochemical reaction between the first N-type layer 23 with the first doping concentration and the electrolyte, the second N-type layer 24 with the second doping concentration is not subjected to electrochemical reaction with the electrolyte, so that the second N-type layer 24 can be used as a normal N-type semiconductor layer of the light-emitting chip; then, the holes 4 are filled with the color conversion material 5, and excitation light generated by the light-emitting structure is converted from the first light color to the second light color by the color conversion material 5, so that the method can be applied to manufacturing light-emitting chips which are complicated in manufacturing by adopting the light-emitting structure with simple manufacturing procedures, such as manufacturing red light chips, green light chips and the like, so as to simplify the manufacturing process and save the manufacturing cost. In addition, the invention integrates the color conversion material 5 and the chip structure, has higher integration, is more beneficial to being introduced into the main flow process of the traditional light-emitting chip, and reduces the extra cost input of new manufacturing process. Meanwhile, the color conversion material 5 is used as a luminous medium, so that the drift of luminous wavelength can be reduced, a blue light chip in a large wavelength range is covered, and the utilization rate of a luminous structure is improved. In addition, the etched first N-type layer 23 has a porous structure, so that scattering of excitation light can be improved, an optical path is increased, absorption efficiency of the color conversion material 5 on the excitation light is greatly improved, leakage of blue light is reduced, and color purity is improved. In addition, the color conversion material 5 is encapsulated and protected by the insulating protection layer arranged in the normal chip manufacturing process, so that the manufacturing process efficiency and the display reliability are improved.
The foregoing disclosure is only illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, which is defined by the appended claims.

Claims (11)

1. A method of fabricating a light emitting chip, comprising:
the light-emitting structure comprises a growth substrate, a first N-type layer with a first doping concentration, a second N-type layer with a second doping concentration, a light-emitting layer and a P-type layer, wherein the first N-type layer, the second N-type layer, the light-emitting layer and the P-type layer are sequentially stacked and grown on the growth substrate, the first doping concentration is larger than the second doping concentration, the first N-type layer with the first doping concentration can electrochemically react with electrolyte, and when the first N-type layer with the first doping concentration and the electrolyte are subjected to electrochemical reaction, the second N-type layer with the second doping concentration does not electrochemically react with the electrolyte;
stripping the growth substrate to expose the first N-type layer;
placing the first N-type layer in the electrolyte, and electrifying to enable the first N-type layer to perform electrochemical reaction with the electrolyte so as to form a plurality of holes in the first N-type layer;
and filling color conversion materials in the holes to obtain the light-emitting chip, wherein the color conversion materials are used for converting exciting light rays emitted by the light-emitting structure from first light colors to second light colors to emit.
2. The method of manufacturing a light emitting device according to claim 1, wherein the first N-type layer and the second N-type layer are N-type GaN layers, and the first doping concentration and the second doping concentration are silicon doping concentrations in the first N-type layer and the second N-type layer, respectively.
3. The method of manufacturing a light-emitting chip according to claim 1, wherein the electrolyte is an acid-based electrolyte.
4. The method of fabricating a light emitting chip according to claim 1, wherein the light emitting structure further comprises a buffer layer grown between the growth substrate and the first N-type layer.
5. The method of manufacturing a light emitting chip according to claim 4, wherein the providing a light emitting structure includes:
growing the buffer layer on the growth substrate by using a metal organic chemical vapor deposition method;
growing the first N-type layer on one side of the buffer layer, which is away from the growth substrate, by using a metal organic chemical vapor deposition method;
growing the second N-type layer on one side of the first N-type layer, which is away from the buffer layer, by utilizing a metal organic chemical vapor deposition method;
growing the light-emitting layer on one side of the second N-type layer, which is away from the first N-type layer, by using a metal organic chemical vapor deposition method;
and growing the P-type layer on one side of the light-emitting layer, which is far away from the second N-type layer, by using a metal organic chemical vapor deposition method.
6. The method of manufacturing a light-emitting chip according to claim 1, wherein the growth substrate is separated from the base plate, the light-emitting structure is fixed on the base plate, and the growth substrate is peeled off;
before fixing the light emitting structure on the substrate, further comprising:
and manufacturing a P electrode on one surface of the P-type layer, which is far away from the light-emitting layer.
7. The method of manufacturing a light emitting device according to claim 6, wherein,
the substrate is a metal substrate or a substrate with a metal bonding pad;
the fixing the light emitting structure on the substrate includes:
and welding and fixing the P electrode and the metal structure on the substrate.
8. The method of manufacturing a light-emitting chip according to any one of claims 1 to 7, further comprising, after filling the plurality of holes with a color conversion material:
and manufacturing an insulating protection layer, wherein the insulating protection layer covers the first N-type layer.
9. The method of manufacturing a light emitting chip according to claim 8, further comprising:
an N electrode is manufactured on one side of the second N type layer, which is away from the first N type layer; the N electrode comprises a first conductive part and a second conductive part which are electrically connected, the first conductive part is electrically connected with the second N-type layer, the second conductive part protrudes out of the insulating protection layer, and the end surface area of the second conductive part for being electrically connected with an external electronic device is larger than that of the first conductive part.
10. The method of manufacturing a light emitting chip according to claim 9, wherein manufacturing an N electrode on a side of the second N-type layer facing away from the first N-type layer, comprises:
manufacturing the first conductive part on the second N-type layer before manufacturing the insulating protection layer;
after the insulating protection layer is manufactured, opening holes in the insulating protection layer to expose the first conductive part;
the second conductive portion is fabricated on the first conductive portion.
11. A light-emitting chip, characterized in that the light-emitting chip is manufactured by the light-emitting chip manufacturing method according to any one of claims 1 to 10.
CN202210532764.XA 2022-05-16 2022-05-16 Light-emitting chip manufacturing method and light-emitting chip Pending CN117117045A (en)

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