CN117096711A - Optical amplifier, manufacturing method, integration method and amplification method of erbium-doped waveguide - Google Patents
Optical amplifier, manufacturing method, integration method and amplification method of erbium-doped waveguide Download PDFInfo
- Publication number
- CN117096711A CN117096711A CN202311017811.8A CN202311017811A CN117096711A CN 117096711 A CN117096711 A CN 117096711A CN 202311017811 A CN202311017811 A CN 202311017811A CN 117096711 A CN117096711 A CN 117096711A
- Authority
- CN
- China
- Prior art keywords
- erbium
- doped
- waveguide
- light
- doped waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 70
- 230000003321 amplification Effects 0.000 title claims abstract description 37
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000010354 integration Effects 0.000 title abstract description 9
- 239000013307 optical fiber Substances 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims description 35
- 229910052691 Erbium Inorganic materials 0.000 claims description 29
- 238000010146 3D printing Methods 0.000 claims description 19
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 14
- -1 erbium ions Chemical class 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 13
- 238000005086 pumping Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 238000001459 lithography Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 238000002679 ablation Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- 238000013519 translation Methods 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 238000004891 communication Methods 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 description 8
- 239000000835 fiber Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005283 ground state Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
- B29C64/124—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified
- B29C64/129—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask
- B29C64/135—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask the energy source being concentrated, e.g. scanning lasers or focused light sources
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Lasers (AREA)
Abstract
The application discloses a manufacturing method, an integration method and an amplification method of an optical amplifier and an erbium-doped waveguide, which belong to the technical field of optical fiber communication and sequentially comprise the following steps along an optical path: the system comprises a first pump laser, a wavelength division multiplexer, a collimating objective lens, a spectroscope, an erbium-doped waveguide, a spectroscope and a second pump laser; the output port of the first pump laser is connected with the pump port of the wavelength division multiplexer through an optical fiber; the output port of the signal light generator is connected with the signal port of the wavelength division multiplexer through an optical fiber. The application is based on an all-optical transmission system, has strong anti-interference capability, and simultaneously utilizes waveguide amplification to realize the manufacture of the waveguide with the length of tens of centimeters on the amplifying chip with small area; in addition, the photonic integrated chip can be integrated with other photonic devices to realize high-integration and multi-application photonic integrated chips.
Description
Technical Field
The application belongs to the technical field of optical fiber communication, and particularly relates to a manufacturing method, an integration method and an amplification method of an optical amplifier and an erbium-doped waveguide.
Background
Fiber optic amplifiers are one of the key components in modern optical systems. The optical signal can be amplified according to different requirements by utilizing the optical fiber amplifier, and the optical fiber amplifier is widely applied to various fields such as optical fiber lasers, optical communication, optical sensing and the like.
The current method for realizing optical amplification mainly comprises a rare earth element doped amplification and a semiconductor laser amplifier. The semiconductor laser amplifier has a complex photoelectric conversion process and has poor reliability; the adoption of the all-optical amplifier can reduce noise interference in the amplifying process, and has higher gain and stronger anti-interference capability; gain fiber amplification needs to provide higher pumping power to excite doped ions, and in the scene of high gain requirement, a plurality of amplifiers are often required to be cascaded, which is not beneficial to the integration of an optical amplification system.
Recent studies have shown that erbium ion doping can produce higher amplification gain with higher optical pumping efficiency. Compared with an optical fiber amplifier, the optical waveguide can greatly improve ion doping concentration, is more beneficial to the integration and miniaturization of an optical amplifying device, and can customize a specific optical waveguide structure to meet specific requirements of different systems. The erbium-doped waveguide structure can realize high optical amplification gain on a small-area waveguide chip and has great application value in the high-power optical amplification and integrated photonics directions, so that an optical amplifier needs to be developed on the basis.
Disclosure of Invention
The application aims to meet the actual requirements and provides an optical amplifier, a manufacturing method, an integration method and an amplifying method of an erbium-doped waveguide, which combine the erbium-doped waveguide with the traditional optical amplifying technology and realize the optical amplification on a small-area photon device by utilizing the amplifying characteristic of the erbium-doped waveguide; meanwhile, the flexibility and stability of the system are improved by utilizing a space optical coupling mode.
In a first aspect, a first object of the present application is to provide an optical amplifier comprising, in order along an optical path: the system comprises a first pump laser, a wavelength division multiplexer, a collimating objective lens, a spectroscope, an erbium-doped waveguide, a spectroscope and a second pump laser; the output port of the first pump laser is connected with the pump port of the wavelength division multiplexer through an optical fiber; the output port of the signal light generator is connected with the signal port of the wavelength division multiplexer through an optical fiber.
In the above-mentioned scheme of the optical amplifier, the collimating objective lens, the spectroscope, the erbium-doped waveguide and the spectroscope are made of photopolymer on a silicon substrate by 3D printing to form an integrated optical amplifying chip.
In a second aspect, a second object of the present application is to provide a method for manufacturing an erbium doped waveguide, comprising the steps of:
s1, bonding erbium-doped glass with the thickness of 1um on a silicon substrate with the thickness of 500um to form a first erbium-doped glass wafer;
s2, uniformly depositing a chromium metal film layer with the thickness of 1um on the surface of the first erbium-doped glass wafer by a magnetron sputtering technology to form a second erbium-doped glass wafer;
s3, performing laser ablation on the surface of the chromium metal film layer by using a femtosecond laser technology, and moving the second erbium-doped glass wafer by using a displacement platform in the ablation process to obtain a required waveguide pattern so as to form a third erbium-doped glass wafer;
s4, performing chemical mechanical polishing lithography on the third erbium-doped glass wafer to obtain an erbium-doped glass waveguide structure covered by the chromium metal film layer;
s5, ablating the erbium-doped glass waveguide structure by using femtosecond laser to remove a chromium metal film layer covered on the erbium-doped glass waveguide structure;
and S6, repeating chemical mechanical polishing lithography to obtain the erbium-doped waveguide with smooth surfaces and side walls.
In the scheme of the manufacturing method based on the erbium-doped waveguide, the concentration of erbium ions in the erbium-doped glass is 2.0x10 20 /cm 3 。
In the above-mentioned scheme based on the erbium-doped waveguide manufacturing method, in the step S3, the center wavelength of the laser beam in the femtosecond laser technology is 1028nm, the pulse duration is 200fs, the provided spot size is 1um, and the translation resolution of the displacement platform is 100nm.
In the above-described method of manufacturing erbium-doped waveguides, the polishing slurry in the chemical mechanical polishing lithography described in step S4 is a suspension of silica particles having a particle diameter of 50nm.
In the above-mentioned scheme based on the manufacturing method of erbium-doped waveguide, in step S6, the thickness and the vertical angle of the sidewall of the erbium-doped waveguide are controlled by controlling the time of chemical mechanical polishing lithography, wherein the thickness of the erbium-doped waveguide is 700nm, the width is 3um, and the angle of the sidewall is 80 °.
In the scheme of the manufacturing method based on the erbium-doped waveguide, the erbium-doped waveguide is rectangular with the length of 2 multiplied by 1 cm.
In the scheme of the manufacturing method based on the erbium-doped waveguide, the length of a single erbium-doped waveguide inside the erbium-doped waveguide is 15 cm.
In a third aspect, a third object of the present application is to provide a 3D printing method of an integrated optical amplifying chip, comprising the steps of:
firstly, respectively carrying out three-dimensional modeling on a micro collimating objective lens, a micro light splitting reflector, an erbium-doped waveguide and a micro light splitting reflector in an integrated light amplifying chip by utilizing computer design software, slicing the three-dimensional model from a bottom layer to a top layer to form a slice sequence from the bottom layer to the top layer, and loading slice information into a 3D printing system;
step two, taking the silicon substrate as a 3D printing substrate, and uniformly coating the photopolymer on the surface of the substrate;
step three, printing the slice sequence layer by utilizing a 3D printing system;
and fourthly, after printing, soaking the printed sample in a propylene glycol-methyl ether acetate-acid ester (PGMEA) solution for 20 minutes, and then cleaning in isopropanol to obtain the integrated light amplification chip.
Further, the order of 3D printing of the internal devices of the integrated optical amplification chip is: erbium-doped waveguide, miniature beam splitting reflector, miniature beam splitter and miniature collimating objective;
the photochemical compound adopted by the erbium-doped waveguide is a photosensitive resin material doped with erbium ions, and the photochemical compound adopted by the rest parts is a photosensitive resin material added with silicon dioxide;
the length of the micro-collimating objective lens is 200 mu m, the diameter of the micro-collimating objective lens is 150 mu m, and the incident space beam is collimated to 80 mu m in diameter;
the upper surface of the micro spectroscope is square with a side length of 2mm, the thickness is 500 mu m, and the diameter is 500 mu m;
the micro spectroscope has a length of 200 μm and a diameter of 150 μm.
In a fourth aspect, a fourth object of the present application is to provide an amplifying method based on a plurality of optical fiber amplifiers as described above, specifically implemented as follows:
step 1, optical signals generated by the signal light generator and pump light emitted by a pump laser I are coupled into a wavelength division multiplexer;
step 2, the light output by the wavelength division multiplexer passes through a collimating objective lens to emit a collimated light beam, the collimated light beam passes through a spectroscope to be coupled into an erbium-doped waveguide for primary amplification;
step 3, the primary amplified light beam output by the erbium-doped waveguide is reflected back to the erbium-doped waveguide by the light splitting reflector for secondary amplification;
step 4, the pumping light of the second pumping laser is coupled into the erbium-doped waveguide to realize backward pumping;
and step 5, the light beam reflected by the spectroscope after the secondary amplified light beam is reversely output from the erbium-doped waveguide is the amplified light signal.
The application has the positive effects that:
based on the technical scheme, the application provides the optical amplifier, which combines the electronic structural characteristics of rare earth ion erbium and the optical waveguide theory with the optical fiber amplifier, enhances the anti-interference capability of signals in an all-optical transmission system, and simultaneously utilizes waveguide amplification to realize the manufacture of waveguides with the length of tens of centimeters on an amplifying chip with a small area; compared with the traditional chemical corrosion, the preparation method of the erbium-doped waveguide provided by the application has the advantages that the femtosecond laser technology is adopted to obtain micron-sized manufacturing precision, the precise control of waveguide patterns is facilitated, the waveguide passage is manufactured on a smaller size, the preparation method can be applied to the designed more flexible waveguide shape, meanwhile, the action time of the femtosecond laser is extremely short, the obvious heat conduction effect can not occur, and the thermal damage to the waveguide structure is avoided; in addition, each component is miniaturized, and the 3D printing technology is integrated into one optical chip, so that the optical amplification system with high gain, miniaturization and multiple applications is realized.
Drawings
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application.
Fig. 1 shows a device diagram of an optical fiber amplifier based on an erbium-doped waveguide according to a first embodiment of the present application;
fig. 2 shows a schematic structural diagram of an erbium doped waveguide according to a second embodiment of the present application;
fig. 3 is a schematic structural diagram of an optical amplifying integrated chip according to a third embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present application.
In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
Throughout the description and claims of this specification the words "comprise" and "comprising" and variations thereof mean "including but not limited to", and they are not intended to (and do not) exclude other ingredients, additives, components, integers or steps. Throughout the description and claims of this specification, the singular forms include the plural unless the context requires otherwise. In particular, where the indefinite article is used, the specification is to be understood as contemplating plurality as well as singularity, unless the context requires otherwise.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the application, unless otherwise indicated, the meaning of "a plurality" is two or more.
First embodiment
The present application provides an optical amplifier, as shown in fig. 1, comprising, in order along an optical path: the first pump laser 2 comprises a wavelength division multiplexer 3, a collimating objective lens 4, a spectroscope 5, an erbium-doped waveguide 6, a spectroscope 7 and a second pump laser 8; the output port of the pump laser No. 2 is connected with the pump port of the wavelength division multiplexer 3 through an optical fiber; the output port of the signal light generator 1 is connected with the signal port of the wavelength division multiplexer 3 through an optical fiber.
The signal light generator 1 may be an optical fiber laser, and the optical fiber laser uses a rare earth element doped glass optical fiber as a gain medium, so as to form laser oscillation output. The central peak value of the fiber laser is 1550nm.
The pump laser 2 and 8 can generate a pump light source for exciting a gain fiber doped with rare earth ions such as erbium ions, with a peak at 980nm, and a maximum pump power of about 30W.
The wavelength division multiplexer 3 may combine a series of optical signals carrying signals, but of different wavelengths, into a bundle for transmission along a single optical fibre so that a plurality of signals are transmitted over one fibre. For example, the signal light and the pump light are coupled into one signal for transmission.
The collimator objective 4 can emit light with different wavelengths of the continuous spectrum light source at different divergence angles, and the output light of the wavelength division multiplexer 3 is changed into a parallel collimated light beam.
The beam splitter 5 can realize the splitting of the optical path signals, and equally divide one optical signal into two paths, wherein one path is directly transmitted and the other path is reflected, so that the optical signals are transmitted in different channels. Conversely, the beam splitter is used in reverse, and the two light beams can be combined into one output. The spectroscope uses the merging property during forward transmission; the property of its shunt is utilized in reverse transmission.
The erbium-doped waveguide 6 is a gain medium, so that the doping concentration of erbium ions can be increased, the signal can be amplified, and higher gain can be realized; the fabrication method of the erbium doped waveguide 6 is identical to that of the first embodiment.
The light splitting mirror 7 can reflect the light signals entering the light splitting mirror to a required direction for transmission, such as the opposite direction or the perpendicular direction; the splitting mirror 7 also acts to couple the pump light generated by the pump laser No. 8 into the erbium doped waveguide 6.
Second embodiment
For the erbium doped waveguide of the first embodiment, the present application provides a method of fabrication comprising the steps of:
s1, bonding erbium-doped glass with the thickness of 1um on a silicon substrate with the thickness of 500um to form a first erbium-doped glass wafer; wherein, the silicon substrate not only can transmit optical signals, but also can manufacture various lights thereonRoad devices such as a receiver, a modulator, a light source and the like, and have the advantages of low cost, good uniformity, easy processing and stable performance; illustratively, the concentration of erbium ions in the erbium-doped glass is 2.0X10 20 /cm 3 。
S2, uniformly depositing a chromium metal film layer with the thickness of 1um on the surface of the first erbium-doped glass wafer through a magnetron sputtering technology to serve as a hard mask, so as to form a second erbium-doped glass wafer.
S3, performing laser ablation on the surface of the chromium metal film layer by using a femtosecond laser technology, and moving the second erbium-doped glass wafer by using a displacement platform in the ablation process to obtain a required waveguide pattern so as to form a third erbium-doped glass wafer; ablation is a complex chemical-physical process of pyrolysis, melting, gasification, sublimation, radiation and the like of materials by utilizing the action of high-temperature high-speed air flow, and the ablation of the chromium metal film layer is carried out according to a required waveguide pattern; specifically, the center wavelength of the laser beam in the femtosecond laser technology is 1028nm, the pulse duration is 200fs, the provided spot size is 1um, and the translation resolution of the displacement platform is 100nm.
S4, performing chemical mechanical polishing lithography on the third erbium-doped glass wafer to obtain an erbium-doped glass waveguide structure covered by the chromium metal film layer; photolithography is a process that transfers pictorial information to a wafer or dielectric layer; the polishing slurry in the chemical mechanical polishing lithography is a silica particle suspension with a particle diameter of 50 nm; the erbium-doped glass is not etched at the position protected by the chromium metal film layer.
S5, ablating the erbium-doped glass waveguide structure by using femtosecond laser to remove the chromium metal film layer covered on the erbium-doped glass waveguide structure.
S6, repeating the chemical mechanical polishing process to obtain the erbium-doped waveguide 4 with smooth surfaces and side walls; wherein the thickness and the vertical angle of the side wall of the erbium-doped waveguide 6 are controlled by controlling the time of chemical mechanical polishing lithography, the thickness of the prepared erbium-doped waveguide 6 is 700nm, the width is 3um, and the angle of the side wall is 80 degrees; the erbium doped waveguide 6 has an outer rectangular shape of 2 x 1 cm.
Preferably, as shown in fig. 2, the length of the erbium-doped waveguide inside the erbium-doped waveguide 6 is 15cm, and the optical waveguide is made into a spiral shape, so that the effective length of the optical waveguide can be increased, and the gain of the amplifier can be increased.
In the preparation process, the morphology of the erbium-doped waveguide 6 can be observed through an electron microscope, and the erbium-doped waveguide 6 emits green fluorescence under the excitation of pump light.
The erbium-doped waveguide restrains the signal light in a certain area for propagation through different refractive indexes of different material areas, when external pumping light is doped into the erbium-doped waveguide 6, the doping ions generate energy level transition, the doping ions absorb pumping light energy and transition from a ground state to a high energy state, when the signal light passes through the erbium-doped waveguide 6, the doping ions transition from the high energy state to a lower energy level under the action of stimulated radiation, the energy is released, the released energy increases the intensity of the signal light, and the signal amplification is realized.
Furthermore, the erbium doped waveguide 6 can integrate a plurality of basic elements on one substrate, facilitating integration.
Third embodiment
Preferably, the light amplifying component may be integrated, and a printing method of the integrated light amplifying chip, as shown in fig. 3, includes: the collimating objective 4, the spectroscope 5, the erbium-doped waveguide 6 and the spectroscope 7 can be manufactured into an integrated light amplifying chip by 3D printing of photopolymer on a silicon substrate.
The method comprises the following specific steps:
firstly, respectively carrying out three-dimensional modeling on a micro collimating objective lens 4, a micro light splitting reflector 5, an erbium-doped waveguide 6 and a micro light splitting reflector 7 in an integrated light amplifying chip by utilizing computer design software, slicing the three-dimensional model from a bottom layer to a top layer to form a slice sequence from the bottom layer to the top layer, and loading slice information into a 3D printing system.
And step two, taking the silicon substrate as a 3D printing substrate, and uniformly coating the photopolymer on the surface of the substrate.
And thirdly, printing the slice sequence layer by utilizing a 3D printing system.
And fourthly, after printing, soaking the printed sample in a propylene glycol-methyl ether acetate-acid ester (PGMEA) solution for 20 minutes, and then cleaning in isopropanol to obtain the integrated light amplification chip.
The 3D printing sequence of the internal devices of the integrated optical amplification chip is as follows: an erbium-doped waveguide 6, a micro beam splitting mirror 7, a micro beam splitter 5 and a micro collimator lens 4. The erbium-doped waveguide 6 uses an erbium-ion-doped photosensitive resin material as the photochemical compound, and the rest uses a silica-doped photosensitive resin material as the photochemical compound.
The microcollimator 4 has a length of about 200 um and a diameter of about 150 um and collimates the incident spatial light beam to a diameter of about 80 um.
The upper surface of the micro beam splitter 5 is square with a side length of 2mm and a thickness of about 500 μm. The diameter is about 500 μm.
The micro spectroscope 7 has a length of about 200 μm and a diameter of about 150 μm.
The basic principle is as follows:
the output light of the signal light generator 1 and the first pump laser 2 is output through the wavelength division multiplexer 3, enters the integrated optical amplifying chip in a space optical coupling mode at the end face of the optical fiber, and the second pump laser 8 is coupled into the other end of the integrated optical amplifying chip through the optical fiber, and enters the integrated optical amplifying chip in a space optical coupling mode at the end face of the optical fiber. Inside the integrated optical amplification chip, the laser light input by the forward input port is coupled into the microcollimator 4 by means of spatial optical coupling. The laser emitted by the micro collimator lens 4 is coupled into the erbium-doped waveguide 6 through the micro spectroscope 5 in a space optical coupling mode, the erbium ions absorb the energy of the pumping light in the erbium-doped waveguide 6, and the laser emitted in the erbium-doped waveguide is reflected back into the waveguide structure through the micro spectroscope 7. And meanwhile, laser input into the backward input pumping end is transmitted into the waveguide structure through the micro beam splitting reflector 7 in a space optical coupling mode to finish backward pumping, and the laser is taken as output laser at the reflecting end of the micro beam splitter 5.
It should be noted that, the butt end surfaces of the optical fiber and the integrated optical amplifying chip should be kept flat to obtain better laser coupling quality.
Fourth embodiment
An amplifying method of an optical fiber amplifier based on the erbium doped waveguide in the above embodiment, as shown in fig. 1, includes the following steps:
step 1, the optical signal generated by the signal light generator 1 and the pump light emitted by the pump laser 2 are coupled into the wavelength division multiplexer 3;
step 2, the light output by the wavelength division multiplexer 3 is emitted by a collimating objective lens 4 to be collimated, and the collimated light is transmitted by a spectroscope 5 and coupled into an erbium-doped waveguide 6 for primary amplification;
step 3, the primary amplified light beam output in the erbium-doped waveguide 6 is reflected back to the erbium-doped waveguide 6 by the beam splitting mirror 7 for secondary amplification;
step 4, the pump light of the second pump laser 8 is coupled into the erbium-doped waveguide 6 to realize backward pumping;
and step 5, the light beam reflected by the spectroscope 5 after the secondary amplified light beam is reversely output from the erbium-doped waveguide 6 is the amplified light signal.
The specific working principle of the amplifier is as follows: after the signal light and the pump light pass through the wavelength division multiplexer 3, the signal light enters the erbium-doped waveguide 6 in a space optical coupling mode for amplification, the other end of the erbium-doped waveguide 6 is reflected back into the erbium-doped waveguide 6 by the light splitting reflector 7 again for secondary amplification, and the pump laser at the other end also couples the laser into the erbium-doped waveguide 6 in a space optical coupling mode. In the erbium doped waveguide 6, the erbium doped ions are excited by the pump light, transition from the ground state to a high energy level, and return to a lower energy level again under the action of the stimulated radiation of the signal light. In this process, the erbium-doped ions emit energy and are absorbed by the signal light, thereby realizing energy gain for the input signal light. Finally, the amplified signal light is reflected from the spectroscope, and the amplifying process of the signal light is completed.
Specifically, after laser is coupled into an erbium-doped waveguide, erbium ions in the erbium-doped waveguide absorb pump light from a ground state and transition to a high-energy state; the transmission of laser light in an erbium doped waveguide can be expressed in terms of lange's law:
E(ε)＝E 0 e -α(ε)L (1)
wherein E is 0 E (epsilon) is the intensity of the laser light after passing through the waveguide, which is the intensity of the incident laser light. L is the waveguide strength, and α (ε) represents the absorption coefficient; thus, the net gain G inside the amplifier can be expressed as:
wherein S is w For signal output power with pump light, S 0 For the output power of the signal without pump light, α is the propagation loss experienced by the signal, including scattering loss and absorption loss, and L is the length of the waveguide.
Alternatively, the optical amplification performance of the system may be studied by detecting the intensity of the output signal light. For example, the pump power of the pump laser is gradually increased from 1W to 10W, and the signal light generator maintains a constant power of 1W. The maximum gain achievable by the system is about 25dB.
The output power of the optical fiber amplifier can be controlled by controlling the length of the erbium-doped waveguide, the erbium ion doping concentration, and the output power of the pump laser, which is not particularly limited in the present application.
Based on the technical scheme, high optical amplification gain is realized on a smaller waveguide area, and meanwhile, the optical amplification gain has better stability and anti-interference capability, and a new direction is provided for optical amplification and photoelectron integration.
It will be apparent to those skilled in the art that features described in relation to any of the embodiments described above may be applied interchangeably between the different embodiments. The above-described embodiments are examples for explaining various features of the present application.
Features, integers, characteristics, compounds, chemical constituents or groups described in conjunction with a particular aspect, embodiment or example of the application are to be understood to be applicable to any other aspect, embodiment or example described herein unless incompatible therewith. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and/or all of the steps of any method or process so disclosed, may be combined in any combination, except combinations where at least some of such features and/or steps are mutually exclusive. The application is not limited to the details of any of the foregoing embodiments. The application extends to any novel one, or any novel combination, of the features disclosed in this specification (including any accompanying claims, abstract and drawings), or to any novel one, or any novel combination, of the steps of any method or process so disclosed.
Claims (10)
1. An optical amplifier comprising, in order along an optical path: the system comprises a first pump laser (2), a wavelength division multiplexer (3), a collimating objective lens (4), a spectroscope (5), an erbium-doped waveguide (6), a beam splitting reflector (7) and a second pump laser (8); the output port of the first pump laser (2) is connected with the pump port of the wavelength division multiplexer (3) through an optical fiber; the output port of the signal light generator (1) is connected with the signal port of the wavelength division multiplexer (3) through an optical fiber.
2. The optical amplifier according to claim 1, characterized in that the collimator objective (4), the beam splitter (5), the erbium doped waveguide (6) and the beam splitting mirror (7) are made of photopolymer on a silicon substrate by 3D printing into an integrated optical amplifying chip.
3. A method of making an erbium doped waveguide comprising the steps of:
s1, bonding erbium-doped glass with the thickness of 1um on a silicon substrate with the thickness of 500um to form a first erbium-doped glass wafer;
s2, uniformly depositing a chromium metal film layer with the thickness of 1um on the surface of the first erbium-doped glass wafer by a magnetron sputtering technology to form a second erbium-doped glass wafer;
s3, performing laser ablation on the surface of the chromium metal film layer by using a femtosecond laser technology, and moving the second erbium-doped glass wafer by using a displacement platform in the ablation process to obtain a required waveguide pattern so as to form a third erbium-doped glass wafer;
s4, performing chemical mechanical polishing lithography on the third erbium-doped glass wafer to obtain an erbium-doped glass waveguide structure covered by the chromium metal film layer;
s5, ablating the erbium-doped glass waveguide structure by using femtosecond laser to remove a chromium metal film layer covered on the erbium-doped glass waveguide structure;
s6, repeating the chemical mechanical polishing process to obtain the erbium-doped waveguide (6) with smooth surfaces and side walls.
4. A method of making an erbium doped waveguide according to claim 3, wherein the concentration of erbium ions in the erbium doped glass is 2.0 x 10 20 /cm 3 。
5. A method of manufacturing an erbium doped waveguide according to claim 3, wherein in step S3, the center wavelength of the laser beam in the femtosecond laser technique is 1028nm, the pulse duration is 200fs, the spot size is 1um, and the translation resolution of the displacement stage is 100nm.
6. A method of manufacturing an erbium doped waveguide according to claim 3, wherein the polishing slurry in the chemical mechanical polishing lithography of step S4 is a suspension of silica particles having a particle diameter of 50nm.
7. A method of manufacturing an erbium-doped waveguide according to claim 3, characterized in that in step S6 the thickness and the sidewall angle of the erbium-doped waveguide (6) are controlled by controlling the time of the chemical mechanical polishing lithography, the thickness of the erbium-doped waveguide being 700nm, the width being 3um, the sidewall angle being 80 °; the erbium-doped waveguide is rectangular with the length of 2 multiplied by 1 cm; the length of the waveguide inside the erbium-doped waveguide was 15cm in a spiral shape.
8. The 3D printing method of the integrated optical amplification chip is characterized by comprising the following steps of:
firstly, respectively carrying out three-dimensional modeling on a micro collimating objective lens (4), a micro light splitting reflector (5), an erbium-doped waveguide (6) and a micro light splitting reflector (7) in an integrated optical amplifying chip by utilizing computer design software, slicing the three-dimensional model from a bottom layer to a top layer to form a slice sequence from the bottom layer to the top layer, and loading slice information into a 3D printing system;
step two, taking the silicon substrate as a 3D printing substrate, and uniformly coating the photopolymer on the surface of the substrate;
step three, printing the slice sequence layer by utilizing a 3D printing system;
and fourthly, after printing, soaking the printed sample in a propylene glycol-methyl ether acetate-acid ester (PGMEA) solution for 20 minutes, and then cleaning in isopropanol to obtain the integrated light amplification chip.
9. The method for 3D printing of an integrated optical amplification chip as recited in claim 8 wherein the order of 3D printing of internal devices of the integrated optical amplification chip is: the device comprises an erbium-doped waveguide (6), a micro beam splitting reflector (7), a micro beam splitter (5) and a micro collimating objective lens (4);
the photochemical compound adopted by the erbium-doped waveguide (6) is a photosensitive resin material doped with erbium ions, and the photochemical compound adopted by the rest parts is a photosensitive resin material added with silicon dioxide;
the length of the micro-collimating objective lens (4) is 200 mu m, the diameter is 150 mu m, and the incident space beam is collimated to 80 mu m;
the upper surface of the micro spectroscope (5) is square with a side length of 2mm, the thickness is 500 mu m, and the diameter is 500 mu m;
the micro spectroscope (7) has a length of 200 μm and a diameter of 150 μm.
10. A method of amplifying light, comprising the steps of:
step 1, coupling an optical signal generated by a signal light generator (1) and pump light emitted by a pump laser (2) into a wavelength division multiplexer (3);
step 2, the light output by the wavelength division multiplexer (3) is emitted by a collimating objective lens (4) to be collimated, and the collimated light is transmitted by a spectroscope (5) and coupled into an erbium-doped waveguide (6) for primary amplification;
step 3, the primary amplified light beam output by the erbium-doped waveguide (6) is reflected back to the erbium-doped waveguide (6) through the light splitting reflector (7) for secondary amplification;
step 4, pump light of the second pump laser (8) is coupled into the erbium-doped waveguide (6) to realize backward pumping;
and 5, reversely outputting the secondary amplified light beam from the erbium-doped waveguide (6), and reflecting the light beam by the spectroscope (5) to obtain an amplified light signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311017811.8A CN117096711A (en) | 2023-08-14 | 2023-08-14 | Optical amplifier, manufacturing method, integration method and amplification method of erbium-doped waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311017811.8A CN117096711A (en) | 2023-08-14 | 2023-08-14 | Optical amplifier, manufacturing method, integration method and amplification method of erbium-doped waveguide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117096711A true CN117096711A (en) | 2023-11-21 |
Family
ID=88774419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311017811.8A Pending CN117096711A (en) | 2023-08-14 | 2023-08-14 | Optical amplifier, manufacturing method, integration method and amplification method of erbium-doped waveguide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117096711A (en) |
-
2023
- 2023-08-14 CN CN202311017811.8A patent/CN117096711A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7826702B2 (en) | Optically coupling into highly uniform waveguides | |
| US6636678B1 (en) | Method and apparatus for waveguide optics and devices | |
| JP3266194B2 (en) | Optical waveguide and laser oscillator and laser amplifier using the optical waveguide | |
| CN101436748B (en) | Optical waveguide laser, optical waveguide amplifier and preparation method thereof | |
| US6141475A (en) | Optical waveguide with dissimilar core and cladding materials, and light emitting device employing the same | |
| CN105659406B (en) | Photoelectric device and its manufacturing method and its material | |
| CN105790052A (en) | Method of improving mid-infrared supercontinuum light source slope efficiency and output power | |
| CN108988106A (en) | Controllable multiple-wavelength fiber external cavity laser based on super surface external cavity mirror | |
| US20030002771A1 (en) | Integrated optical amplifier | |
| CN117096711A (en) | Optical amplifier, manufacturing method, integration method and amplification method of erbium-doped waveguide | |
| WO2023226610A1 (en) | Coherent array laser structure and preparation method | |
| US8995482B1 (en) | High energy semiconductor laser | |
| CN111244745A (en) | High repetition frequency 1.5um human eye safety Q-switched microchip laser | |
| CN116526261A (en) | Diode pumped solid state laser with miniaturized master oscillator power amplifier structure | |
| Mwarania et al. | Neodymium-doped ion-exchanged waveguide lasers in BK-7 glass | |
| US6661567B2 (en) | Optical amplifier, optical amplifier hybrid assembly and method of manufacture | |
| JP3940553B2 (en) | Upconversion optical element | |
| CN220272955U (en) | Optical fiber amplification system based on multichannel erbium-doped waveguide array | |
| JP2006505117A (en) | Optical amplifier | |
| JP3091342B2 (en) | Glass light emitting device | |
| US20210288460A1 (en) | Laser amplifier | |
| US7382523B2 (en) | Beam-guiding and/or frequency-converting optical system and method for producing the same | |
| CN106444213A (en) | Integration type surface plasmon logic circuit | |
| Heidrich et al. | Analysis of optical crosstalk within optoelectronic integrated circuits including lasers and photodetectors | |
| JP2002365456A (en) | Optically active transmission path and method of manufacturing for the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |