CN117096206A - Light sensing and calculation integrated device based on bismuth oxygen selenium-perovskite heterojunction and preparation method thereof - Google Patents
Light sensing and calculation integrated device based on bismuth oxygen selenium-perovskite heterojunction and preparation method thereof Download PDFInfo
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- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical group [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1127—Devices with PN heterojunction gate
- H01L31/1129—Devices with PN heterojunction gate the device being a field-effect phototransistor
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Abstract
The invention discloses a light sensing calculation integrated device based on bismuth oxygen selenium-perovskite heterojunction and a preparation method thereof, the device comprises a substrate and a gate dielectric layer, a heterojunction light sensor array is arranged on the gate dielectric layer, the heterojunction light sensor comprises a perovskite light absorption layer and a bismuth oxygen selenium channel layer which are overlapped up and down, both sides of the bismuth oxygen selenium channel layer are provided with source and drain electrodes, the heterojunction light sensor is of a type I energy band structure, under negative gate, the heterojunction light sensor is of a pn energy band, under positive gate, the heterojunction light sensor is of nn + And the positive and negative light response of the heterojunction optical sensor, which is dependent on the grid voltage, corresponds to the weight in the neural network calculation, so that the sensing and calculation integration is realized. The invention can realize convolution operation, picture preprocessing function and target detection functionHas ultrahigh light sensitivity, and can effectively improve low light environment (as low as 0.1 mu W/cm) 2 ) And a lower image edge calculation function.
Description
Technical Field
The invention relates to a method for realizing a hypersensitivity light sensor and a sensing and computation integrated technology application (ultrahigh bipolar photoresponsivity photosensor and retinomorphic in-sensor computing) based on a bismuth oxygen selenium-perovskite heterojunction, belonging to the technical field of high-performance sensing and computation integrated technology.
Background
The high-sensitivity sensing and calculating integrated device has important application requirements in the fields of automatic driving, intelligent robots and man-machine interaction. Conventional image sensors (based on charge coupled photo devices and CMOS photo devices) generate a large amount of redundant data during image capture. The physical separation of the sensing and computing modules results in the continuous conversion and handling of redundant data between the sensing modules and the computing units, thereby reducing the efficiency of the overall system and increasing power consumption and delay. In contrast, retinal-like sensors capture and process visual information in a highly parallel manner, which can effectively reduce the transmission of redundant data, thereby reducing power consumption. The high sensitivity retinal-like sensor is capable of capturing images in real time with high temporal resolution and extracting key spatiotemporal features simultaneously by performing analog multiply-add operations for performing edge intelligence tasks such as noise filtering, contrast enhancement, and feature classification. Indeed, various strategies have been proposed for simulating retinal-like sensors, including electrostatic doping, adjusting two-dimensional heterostructure band arrangements, etc., for implementing bipolar photocurrent-based intra-sense convolution processing. However, these methods still have a problem in that the light response is generally poor, typically less than 10 4 a/W due to the inherently low light absorption coefficient and limited photo-carrier transport properties of the material. This has limited the application of retinal-like sensors in low light environments and in small-sized sensing devices, and therefore, there is an urgent need to explore new materials and device designs to achieve both excellent photoelectric response and bipolar light response characteristics.
Disclosure of Invention
In order to realize a high-sensitivity reconfigurable nerve morphology sensing integrated device, the invention provides a light sensing integrated device based on a bismuth-oxygen-selenium-high-absorption perovskite heterojunction with high mobility, which realizes the visible spectrum rangeIs a high sensitivity bipolar light response (responsivity is 5.1X10) 7 A/W, specific detection rate 3.2×10 15 Jones). The light sensing and calculating integrated device can effectively perform analog multiplication and addition operation in the sensor, and is used for calculating tasks of the inner edge of the sensor, including various image preprocessing functions and image edge detection in a low light environment.
The technical scheme of the invention is as follows:
the utility model provides a light sense calculates integrative device, its characterized in that includes substrate and bars dielectric layer, is located the heterojunction photosensor array of having arranged on the bars dielectric layer, heterojunction photosensor includes upper and lower superimposed perovskite light absorption layer and bismuth oxygen selenium channel layer, and bismuth oxygen selenium channel both sides are source drain (S/D) electrode, and bismuth oxygen selenium-perovskite band structure has the gate voltage dependence, and when the gate voltage was 0, heterojunction photosensor was type I band structure, and electron and hole barrier are all less, lead to the photo-generated electron hole can inject into bismuth oxygen selenium channel simultaneously, and then photocurrent is nearly 0. Under negative gate, heterojunction photosensor is pn-type energy band arrangement, hole potential barrier is far greater than electron potential barrier, photo-generated electrons and holes are generated in perovskite under illumination, and photo-generated electrons diffuse into bismuth oxygen selenium, so that channel current is increased. Under positive gate voltage, heterojunction photosensor is nn + The energy bands are arranged, at the moment, the electron potential barrier is far greater than the hole potential barrier, and under illumination, photogenerated holes generated in perovskite are injected into bismuth oxygen selenium, so that channel current is reduced, and further, the bipolar optical response with adjustable grid voltage is realized, the positive and negative optical response of the heterojunction optical sensor, on which the grid voltage depends, corresponds to the weight in neural network calculation, and the sensing and calculation integration is realized.
Further, the substrate is silicon, and the gate dielectric layer is hafnium oxide (HfO 2 ) The thickness is in the range of 10-20 and nm, and the source and drain electrodes are Pd/Au metal laminated layers. The thickness of the bismuth oxygen selenium channel layer is in the range of 5-20 nm, the thickness of the source electrode and the drain electrode is not more than 80 nm, and the perovskite material can be organic perovskite, inorganic perovskite or organic-inorganic hybrid perovskite and the like.
The invention further provides a preparation method of the light sensing and calculating integrated device, which comprises the following steps:
1) Growing a layered two-dimensional bismuth oxygen selenium material by CVD;
2) Transferring the bismuth oxyselenium layer-shaped two-dimensional material to a gate dielectric layer positioned on a substrate;
3) Positioning the transferred bismuth oxyselenium, and defining a channel region through electron beam exposure;
4) Ar ion etching is used for separating a channel region;
5) Defining a source-drain electrode region by electron beam exposure;
6) Evaporating the metal lamination by an electron beam and stripping to form a source electrode and a drain electrode;
7) Preparing a perovskite film by an antisolvent spin coating method to form a heterojunction optical sensor array;
8) And packaging the light sensing and calculating integrated device by spin coating of PMMA film.
The invention has the following advantages:
1) The high-mobility semiconductor bismuth oxygen selenium is adopted as a channel layer, the high-light absorption semiconductor perovskite is adopted as an absorption layer, and the interface hot carrier transfer characteristic and the gate adjustable characteristic of the heterojunction material are combined for the first time, so that a high-sensitivity reconfigurable light sensing calculation integrated device is realized.
2) The positive and negative light response of the grid voltage dependence corresponds to weight adjustment in neural network calculation, and further the multiplication and addition of light weight (light responsivity) and light intensity can be achieved based on the device array, so that a sense and calculation integrated function is achieved, hardware cost is effectively reduced, and edge calculation efficiency is improved.
3) Based on the adjustability of the photoresponsivity, convolution operation is realized at the array level, and a picture preprocessing (noise removal, edge detection, formatting and the like) function and a target detection function can be realized. Has ultrahigh light sensitivity, and can effectively improve low light environment (as low as 0.1 mu W/cm) 2 ) The lower image edge calculation function effectively improves the application capability of the device in a weak light environment, and improves the image capturing capability and the edge calculation efficiency.
Drawings
FIG. 1 is a schematic diagram of a heterojunction photosensor according to the present invention;
fig. 2 to fig. 7 are schematic views of process steps of a light sensing integrated device according to an embodiment of the present invention, where:
FIG. 2 is a step of growing bismuth oxyselenium material on a mica substrate;
FIG. 3 is a step of separating bismuth oxyselenium material from mica substrate using PMMA assisted transfer;
FIG. 4 shows the transfer of selenium bismuth oxide/PMMA to Si/HfO 2 A step of defining a channel region on the substrate and using electron beam exposure;
FIG. 5 is a schematic diagram of a bismuth oxide selenium patterned array using Ar ion etching;
FIG. 6 shows a step of preparing source-drain electrodes at two ends of a bismuth oxide selenium channel;
fig. 7 is a step of spin coating perovskite on bismuth oxyselenium channels.
FIG. 8 is a graph showing the photo-response characteristics of a heterojunction photosensor according to an embodiment of the present invention, wherein graphs (a) - (c) are respectively the photo-responsivity of the device, the specific detection rate and the external quantum efficiency parameter are compared, wherein PVSK is a MAPbI3 perovskite photosensor, BOS is a bismuth oxygen selenium photosensor, and PVSK-BOS is a heterojunction photosensor of a photo-sensing integrated device according to the present invention;
FIG. 9 is a graph showing the photo-responsivity/specific detection rate at 532 nm wavelength for a heterojunction optical device according to an embodiment of the present invention;
fig. 10 is a graph showing the positive and negative light response of a heterojunction light sensor at 400nm (a), 500nm (b), 700 nm (c) wavelengths, in accordance with an embodiment of the present invention.
Fig. 11 is a schematic diagram of the heterojunction light sensing device according to an embodiment of the present invention, in which (a) the photocurrent and (b) the photo-responsivity are extracted at 640 and nm wavelengths, according to the change of the gate voltage.
FIG. 12 is a graph of current versus time for a heterojunction light sensing device under continuous light pulse stimulation in accordance with an embodiment of the present invention, wherein (a) is a repeatable positive light response at a gate voltage of-3V and (b) is a repeatable negative light response at a gate voltage of +3V;
FIG. 13 is a schematic diagram illustrating the operation of a heterojunction light sensor device in accordance with an embodiment of the present invention;
FIG. 14 shows a Gaussian, laplacian, inverse operator formed by a light sensing integrated device in an embodiment of the present invention, which respectively implements the functions of image noise removal, edge detection, and image formatting;
FIG. 15 is a graph edge processing result of an operator for strong light and weak light respectively formed by a light sensing and calculation integrated device in an embodiment of the invention;
in the figure: 1-a substrate; 2-gate dielectric layer; 3-a source electrode; 4-a drain electrode; a 5-bismuth oxyselenium channel layer; a 6-perovskite light absorbing layer; 7-a mica substrate; 8-PMMA.
Detailed Description
The present invention will be described in detail below by way of examples with reference to the accompanying drawings.
As shown in FIG. 1, the heterojunction optical sensor device is positioned on a substrate and a gate dielectric layer, and the heterojunction optical sensor is composed of a bismuth-oxygen-selenium channel layer and a perovskite light absorption layer, and source-drain (S/D) electrodes are arranged on two sides of the bismuth-oxygen-selenium channel. The heterojunction optical sensor array is used for forming a light sensing and calculating integrated device, so that different picture preprocessing functions are realized, and the recognition capability of traffic signal lamps in a neural network algorithm is further improved.
Firstly, the invention provides a method for preparing a light sensing and calculating integrated device based on bismuth oxygen selenium-perovskite heterojunction, which comprises the following steps:
1) The bismuth oxygen selenium material is Bi 2 O 3 And Bi (Bi) 2 Se 3 As a growth source on a mica substrate, as shown in fig. 2.
2) Spin-coating PMMA (polymethyl methacrylate) on the surface of bismuth oxygen selenium material on a mica substrate, and then using HF to H 2 O=1:40 (volume ratio) etching the mica substrate to separate the bismuth oxyselenium from the mica substrate as shown in fig. 3;
3) The bismuth oxygen selenium/PMMA is transferred to Si/HfO after being washed by deionized water 2 On the substrate, a channel region is then defined using electron beam exposure, as shown in FIG. 4;
4) Using Ar ion etching to realize a bismuth oxide selenium graphical array, as shown in fig. 5;
5) For the separated two-dimensional bismuth oxygen selenium channel region (material thickness range of 5-20 a nm in this example), source drain (S/D) regions were defined by electron beam Exposure (EBL), and the metal (Pd/au=5/45 a nm in this example) was evaporated by electron beam and stripped to form source drain electrodes, as shown in fig. 6.
6) The perovskite layer (material thickness in this example ranged from 100-200 a nm a to form a heterojunction photosensor array as shown in fig. 7) was prepared using an antisolvent spin coating method.
7) And packaging the light sensing and calculating integrated device by spin coating of PMMA film.
As shown in fig. 8 and 9, the heterojunction optical sensor device can realize 5.1×10 7 A/W light responsivity of 3.2X10 15 Jones' specific detection rate, 106 dB dynamic response range. The electrical measurement is performed by the probe station and the semiconductor parameter analyzer 1500, and the light with different wavelengths and different intensities is applied to the optical sensing device by combining with a light source, a monochromator and other devices. The test results show that the spectral response of the heterojunction optical sensor device ranges from 400nm to 800nm, and the optical response of the device gradually changes from negative response to positive response as the gate voltage increases, as shown in fig. 10.
According to I ph =I light -I dark ，R=I ph /(P in X S), the light responsivity at different wavelengths of extracted light, different gates is shown in fig. 11 (b).
To verify light sensing device stability, periodic light pulses were applied to the heterojunction light sensing device, which remained stable for 100 cycles of operation, as shown in fig. 12.
The working principle of the heterojunction light sensor device is shown in fig. 13, under the condition of a relatively negative gate, the heterojunction is in weak pn-type energy band arrangement, the hole potential barrier is far greater than the electron potential barrier, and under illumination, the photo-generated electrons generated in perovskite diffuse into bismuth oxygen selenium, so that the channel current is increased. At positive gate voltage, the heterojunction is nn + The energy bands are arranged, at the moment, the electron potential barrier is far greater than the hole potential barrier, and under illumination, the photo-generated holes generated in perovskite are injected into bismuth oxygen selenium, so that the channel current is reduced, and further positive and negative light response with adjustable grid voltage is realized.
To further demonstrate the effect of a light sensing integrated device comprised of a heterojunction photosensor array. By applying different gate voltagesDevice light weight value (light responsivity), preprocessing of the simulated convolution check pictures using 3*3 array (device execution i=r×p in Operation), wherein the Gaussian operator corresponds to the device voltages of: -0.8V, -1.2V, -2V, -1.2V, -0.8V. The device voltages corresponding to the Laplacian operator are respectively as follows: 0.4V, -2v,0.4 v. The Inverse operator corresponds to the device voltages as: -0.5V,0.4V, -0.5V, -0.5V. The output current is measured after the optical signal is input into the array, and the image is reconstructed according to the output current value, so that the processing functions of noise removal, edge detection, formatting and the like of the image are realized, as shown in fig. 14.
The bipolar light response of the light sensing and calculating integrated device of the embodiment can reach +/-10 6 A/W, and the minimum light intensity is 0.1 mu W/cm 2 . As shown in FIG. 15, the devices respectively form a high-responsivity computation convolution kernel by adjusting the gate voltage (the magnitude of the photoresponsivity is within + -10) 6 a/W) and a low responsivity sense convolution kernel (magnitude of optical responsivity is + -10) 4 A/W). The high-responsivity operator has a uniform and better edge detection effect on the strong light picture and the weak light picture, and the low-responsivity computation convolution kernel loses most of edge information when processing the weak light picture.
The above-described embodiments are not intended to limit the invention, and various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention is therefore defined in the claims.
Claims (6)
1. The light sensing and calculating integrated device is characterized by comprising a substrate and a gate dielectric layer, wherein a heterojunction light sensor array is arranged on the gate dielectric layer, the heterojunction light sensor comprises a perovskite light absorption layer and a bismuth oxygen selenium channel layer which are overlapped up and down, two sides of the bismuth oxygen selenium channel layer are source and drain electrodes, the heterojunction light sensor is of a type I energy band structure, under negative gate voltage, the heterojunction light sensor is of a pn energy band, under positive gate voltage, the heterojunction light sensor is of nn + Energy band, heterojunction photosensorThe positive and negative optical responses of the gate voltage dependence of (c) correspond to weights in the neural network calculation.
2. The integrated light sensing device of claim 1, wherein the bismuth oxide selenium channel layer has a thickness in the range of 5-20 nm.
3. The light-sensing integrated device of claim 1, wherein the gate dielectric layer is hafnium oxide having a thickness in the range of 10-20 a nm a.
4. The light-sensitive integrated device of claim 1, wherein the perovskite material is an organic perovskite, an inorganic perovskite, or an organic-inorganic hybrid perovskite.
5. The integrated light sensing device of claim 1, wherein the source and drain electrodes are Pd/Au stacks having a thickness of no more than 80 a nm a.
6. A method of manufacturing a light-sensitive integrated device as claimed in claim 1, comprising the steps of:
1) Growing a layered two-dimensional bismuth oxygen selenium material by CVD;
2) Transferring the bismuth oxyselenium layer-shaped two-dimensional material to a gate dielectric layer positioned on a substrate;
3) Positioning the transferred bismuth oxyselenium, and defining a channel region through electron beam exposure;
4) Ar ion etching is used for separating a channel region;
5) Defining a source-drain electrode region by electron beam exposure;
6) Evaporating the metal lamination by an electron beam and stripping to form a source electrode and a drain electrode;
7) Preparing a perovskite film by an antisolvent spin coating method to form a heterojunction optical sensor array;
8) And packaging the light sensing and calculating integrated device by spin coating of PMMA film.
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