CN117096149B - Gallium nitride device and manufacturing method thereof - Google Patents
Gallium nitride device and manufacturing method thereof Download PDFInfo
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- CN117096149B CN117096149B CN202311366896.0A CN202311366896A CN117096149B CN 117096149 B CN117096149 B CN 117096149B CN 202311366896 A CN202311366896 A CN 202311366896A CN 117096149 B CN117096149 B CN 117096149B
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000011324 bead Substances 0.000 claims abstract description 65
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 65
- 238000002955 isolation Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims description 57
- 239000003990 capacitor Substances 0.000 claims description 49
- 239000011159 matrix material Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 abstract description 6
- 230000003071 parasitic effect Effects 0.000 abstract description 6
- 230000016507 interphase Effects 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 abstract 4
- 238000010586 diagram Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
Abstract
The utility model relates to a nitride device and manufacturing method thereof, the device includes the base plate, arrange a plurality of signal circuits on the first surface of base plate, a plurality of common source electrode of interval setting on the base plate, establish on the base plate and lie in the isolation capacitance between two signal circuits, establish ferrite magnetic bead on the second surface of base plate and lie in the second surface of base plate and with the control circuit of matching ferrite magnetic bead electricity connection, same line or same line's signal circuit is connected with same common source electrode electricity, ferrite magnetic bead is connected with adjacent one of them isolation capacitance electricity of signal circuit of matching, arbitrary two adjacent ferrite magnetic beads are connected with the isolation capacitance that lies in the different sides of signal circuit of matching electricity. According to the gallium nitride device and the manufacturing method thereof, parasitic inductance and parasitic capacitance of the gallium nitride device in the phased array radar are reduced in a mode of optimizing the internal structural design, and inter-phase interference among the gallium nitride devices is reduced in a mode of combining differentiated shielding.
Description
Technical Field
The present application relates to the field of microelectronics technologies, and in particular, to a gallium nitride device and a method of fabricating the same.
Background
Semiconductors having a band gap greater than 2 eV are generally referred to as wide band gap semiconductors, and are also referred to as third generation semiconductors. Gallium nitride (GaN) is used as a third generation semiconductor material, and has excellent material characteristics such as large forbidden bandwidth, high breakdown field strength, high electron saturation drift rate, and the like.
The use of gallium nitride devices in phased array radar is also becoming more widespread, as they can lead to better parametric performance while providing better solutions in terms of equipment volume and heating. From the aspect of equipment volume, the nitride device can reduce the volume of the phased array radar, or more signal components can be plugged into the phased array radar under the same volume; from the aspect of heating, the nitride device has better heat resistance, can provide longer working time under the same heat supply scheme, and can adjust the working temperature to be higher.
However, in another aspect, the size is reduced, the heat resistance is improved, and meanwhile, the integration level of the components is higher and higher, and the electromagnetic interference caused by the integration is also more serious, for example, parasitic inductance and capacitance are introduced by pins and internal wires in the device package, and dv/dt and di/dt in the switching process of the gallium nitride device under the high-voltage and high-current working condition are extremely high, so that the whole circuit is extremely sensitive to the parasitic parameters.
This can directly influence the normal work of components and parts, and inter-phase interference can also appear between components and parts simultaneously.
Disclosure of Invention
The utility model provides a nitride device and manufacturing method thereof, through the mode that optimizes internal structure design reduces the parasitic inductance and the parasitic capacitance of nitride device in the phased array radar, combines the shielding mode of differentiation to reduce the inter-phase interference between nitride device simultaneously.
The above object of the present application is achieved by the following technical solutions:
in a first aspect, the present application provides a gallium nitride device comprising:
a substrate;
a plurality of signal circuits arranged on the first surface of the substrate in a matrix form of MxN, M and N each being a natural number greater than zero;
a plurality of common source electrodes arranged on the substrate at intervals, and signal circuits in the same row or column are electrically connected with the same common source electrode;
the isolation capacitor is arranged on the substrate and is positioned between the two signal circuits;
ferrite magnetic beads which are arranged on the second surface of the substrate and are electrically connected with one of the isolation capacitors adjacent to the matched signal circuit;
the control circuit is positioned on the second surface of the substrate and is electrically connected with the matched ferrite magnetic beads;
wherein any two adjacent ferrite beads are electrically connected with isolation capacitors located on different sides of the matched signal circuit.
In a possible implementation manner of the first aspect, the signal input line connected to the ferrite bead is located on the second surface of the substrate.
In a possible implementation manner of the first aspect, the signal input lines of any two adjacent ferrite beads are not parallel and the current directions in any two adjacent ferrite beads are not parallel.
In a possible implementation manner of the first aspect, one of the plates of the isolation capacitor is grounded.
In a possible implementation manner of the first aspect, a ground line is provided on the substrate, and one of the polar plates of the isolation capacitor is electrically connected with the ground line;
the ground line is perpendicular to the common source electrode.
In a possible implementation manner of the first aspect, when any two adjacent isolation capacitors are not electrically connected to the ferrite bead, the two isolation capacitors share one polar plate.
In a possible implementation manner of the first aspect, a pole plate shared by the two isolation capacitors is grounded.
In a possible implementation manner of the first aspect, the first portion of the ferrite bead is located inside the substrate, and the second portion of the ferrite bead is located outside the substrate.
In a possible implementation manner of the first aspect, the first portion of the control circuit is located on the second surface of the substrate, and the second portion is located between two adjacent ferrite beads and extends in a direction away from the substrate.
In a second aspect, the present application provides a method of manufacturing a gallium nitride device, comprising:
manufacturing a signal circuit and isolation capacitors on a first surface of a substrate, wherein a plurality of isolation capacitors are surrounded by each signal circuit;
manufacturing a plurality of common source electrodes on the first surface of the substrate and electrically connecting the source electrodes of the signal circuits with the common source electrodes;
embedding ferrite magnetic beads on the second surface of the substrate, wherein the ferrite magnetic beads are electrically connected with one of the isolation capacitors adjacent to the matched signal circuit; and
and manufacturing a control circuit on the second surface of the substrate, wherein the control circuit is electrically connected with the ferrite magnetic beads.
Drawings
Fig. 1 is a schematic structural view of a gallium nitride device provided herein.
Fig. 2 is a schematic diagram of a distribution of a signal circuit on a substrate according to the present application.
Fig. 3 is a schematic diagram of wiring and current flow of two adjacent ferrite beads provided in the present application.
Fig. 4 is a schematic distribution diagram of a common source electrode on a substrate provided in the present application.
Fig. 5 is a schematic distribution diagram of a ground line provided in the present application.
In the figure, 2, a common source electrode, 4, a control circuit, 5, a ground line, 11, a substrate, 12, a signal circuit, 31, an isolation capacitor, 32 and ferrite beads.
Detailed Description
The technical solutions in the present application are described in further detail below with reference to the accompanying drawings.
Referring to fig. 1, in some examples, the gallium nitride device includes a substrate 11, a signal circuit 12, a common source electrode 2, an isolation capacitor 31, ferrite beads 32, and a control circuit 4, where the number of signal circuits 12 is plural, the signal circuits 12 are arranged on a first surface of the substrate 11 in a matrix form of MxN, and M and N are natural numbers greater than zero, as shown in fig. 2.
The function of the signal circuit 12 is to amplify the input signal and then to transmit the amplified signal to the antenna element, which then transmits the amplified signal into the space facing the antenna element.
The signal circuits 12 are input by the common source electrodes 2, and the number of the common source electrodes 2 is plural, and the common source electrodes 2 are arranged on the substrate 11 at intervals, and the signal circuits 12 of the same row or column are electrically connected with the same common source electrode 2, that is, the number of the common source electrodes 2 is M or N.
The isolation capacitor 31 is disposed on the substrate 11 and between the two signal circuits 12, and is used for intercepting electromagnetic interference signals between the two signal circuits 12. In some examples, four isolation capacitances 31 are present around each signal circuit 12, i.e., for any two adjacent signal circuits 12, there is one isolation capacitance 31 between both signal circuits 12.
A ferrite bead 32 is located on the second surface of the substrate 11, the ferrite bead 32 being electrically connected to one of the isolation capacitors 31 adjacent to the matched signal circuit 12. The ferrite beads 32 may filter high frequency noise over a target wide frequency range and dissipate the noise energy in the form of heat.
In this application, high frequency noise is mainly generated at the control end of the signal circuit 12, because high frequency switching occurs here, and the generated high frequency noise may interfere with other adjacent signal circuits 12. For example, when the adjacent other signal circuit 12 performs switching control at a high frequency, the interference signal is coupled to the control signal of the adjacent other signal circuit 12, and the control signal is distorted. The ferrite beads 32 are therefore used in this application to filter out this portion of the high frequency signal.
For the isolation capacitor 31 connected in series with the ferrite bead 32, it functions as follows:
the isolation capacitor 31 reduces the cutoff frequency, which makes the signal circuit 12 operate at higher frequencies more efficient.
The isolation capacitor 31 can increase the switching speed, and the isolation capacitor 31 can provide additional charge, thereby shortening the switching time of the signal circuit 12.
For an isolation capacitor 31 that is not in series with the ferrite bead 32, its effect is mainly to isolate large currents between the signal circuits 12. It should be appreciated that, as mentioned above, gallium nitride devices can operate with large currents, which means that current leakage may occur, and the current generated by the leakage can be absorbed by the isolation capacitor 31, which is not connected in series with the ferrite bead 32, to reduce the mutual influence between the signal circuits 12 caused by the leakage.
The control circuit 4 is located on the second surface of the substrate 11 and is electrically connected with the matched ferrite beads 32, and is used for controlling the matched signal circuit 12 to realize amplification output of the input signal.
Any two adjacent ferrite beads 32 are electrically connected to isolation capacitors 31 located on different sides of the matched signal circuit 12 in order to reduce the likelihood of electromagnetic interference. It should be understood that two parallel wires are in operation, and mutual inductance occurs, which can interfere with the signals of the wires themselves.
The mutual inductance is solved by increasing the wire width and increasing the distance between wires, and when the space is limited, the mutual inductance is reduced by increasing the distance between wires (any two adjacent ferrite beads 32 are electrically connected with the isolation capacitors 31 positioned on different sides of the matched signal circuit 12).
In some examples, signal input lines 321 connected to ferrite beads 32 are located on the second surface of substrate 11. This is mainly for connection with other circuit boards, because the signal input line 321 connected to the ferrite bead 32 can be directly connected to the signal circuit board in an interlayer bonding manner when the signal circuit board is connected to the gallium nitride device disclosed in the present application. This way of stacking in the longitudinal direction enables a shorter link distance and also a smaller volume.
In some possible implementations, referring to fig. 3, the signal input lines 321 of any two adjacent ferrite beads 32 are not parallel and the current directions in any two adjacent ferrite beads 32 are not parallel, so as to reduce the mutual inductance phenomenon and improve the accuracy of the input signal.
In some examples, one of the plates of the isolation capacitor 31 is grounded, which may allow the isolation capacitor 31 to discharge quickly to make room for the next charging process.
In some examples, referring to fig. 4 and 5, a ground line 5 is disposed on the substrate 11, and one of the plates of the isolation capacitor 31 is electrically connected to the ground line 5. The ground line 5 is perpendicular to the common source electrode 2 in order to reduce mutual inductance, since the discharge process of the isolation capacitor 31 also brings about a large current.
The ground line 5 is not located at the same layer as the common source electrode 2, or the ground line 5 may be directly introduced at the signal circuit board.
In some examples, when none of the two adjacent isolation capacitors 31 is electrically connected to the ferrite beads 32, the two isolation capacitors 31 share one plate. Further, the common electrode plate of the two isolation capacitors 31 is grounded.
Of course, the two isolation capacitors 31 may be replaced by one isolation capacitor 31, in order to reduce space occupation and save metal materials.
In some examples, a first portion of the ferrite beads 32 is located inside the substrate 11 and a second portion of the ferrite beads 32 is located outside the substrate 11 in order to facilitate heat dissipation from the ferrite beads 32. Because of the foregoing, the gallium nitride devices disclosed herein also require the use of signal circuit boards to make the stacked connection.
Transferring a portion of the ferrite beads 32 to the outside of the substrate 11 (shown in fig. 1), it is possible to realize in the gallium nitride device and the signal circuit board disclosed in the present application, a heat dissipation path that can be directly used for heat dissipation of the ferrite beads 32, such as air-cooling heat dissipation, or using a material with high heat transfer efficiency, such as diamond.
Further, the first portion of the control circuit 4 is located on the second surface of the substrate 11, and the second portion is located between two adjacent ferrite beads 32 and extends away from the substrate 11, so that the second portion of the control circuit 4 can be physically shielded by the ferrite beads 32, and mutual interference (caused by mutual inductance) between the second portions of the control circuit 4 is avoided.
The application also discloses a method for manufacturing the gallium nitride device, which comprises the following steps:
s101, manufacturing a signal circuit 12 and isolation capacitors 31 on a first surface of a substrate 11, wherein a plurality of isolation capacitors 31 are surrounded by each signal circuit 12;
s102, manufacturing a plurality of common source electrodes 2 on a first surface of a substrate 11 and electrically connecting sources of a signal circuit 12 with the common source electrodes 2;
s103, embedding ferrite beads 32 on the second surface of the substrate 11, wherein the ferrite beads 32 are electrically connected with one of the isolation capacitors 31 adjacent to the matched signal circuit 12; and
s104, a control circuit 4 is fabricated on the second surface of the substrate 11, and the control circuit 4 is electrically connected to the ferrite beads 32.
The contents of steps 101 to 104 are descriptions of the manufacturing process of the gallium nitride device disclosed in the present application, and the structure of the gallium nitride device is clearly understood, and will not be repeated here.
The embodiments of the present invention are all preferred embodiments of the present application, and are not intended to limit the scope of the present application in this way, therefore: all equivalent changes in structure, shape and principle of this application should be covered in the protection scope of this application.
Claims (8)
1. A gallium nitride device, comprising:
a substrate (11);
a plurality of signal circuits (12) arranged on the first surface of the substrate (11) in a matrix form of MxN, M and N each being a natural number greater than zero;
a plurality of common source electrodes (2) arranged on the substrate (11) at intervals, and signal circuits (12) of the same row or column are electrically connected with the same common source electrode (2);
an isolation capacitor (31) provided on the substrate (11) and located between the two signal circuits (12);
ferrite magnetic beads (32) are arranged on the second surface of the substrate (11), and the ferrite magnetic beads (32) are electrically connected with one of the isolation capacitors (31) adjacent to the matched signal circuit (12);
a control circuit (4) located on the second surface of the substrate (11) and electrically connected to the matched ferrite beads (32);
wherein any two adjacent ferrite beads (32) are electrically connected with isolation capacitors (31) positioned on different sides of the matched signal circuit (12);
a signal input line (321) connected to the ferrite beads (32) is located on the second surface of the substrate (11);
the signal input lines (321) of any two adjacent ferrite beads (32) are not parallel and the current directions in any two adjacent ferrite beads (32) are not parallel.
2. A gallium nitride device according to claim 1, wherein one of the plates of the isolation capacitor (31) is grounded.
3. The gallium nitride device according to claim 2, wherein a ground line (5) is provided on the substrate (11), and one of the plates of the isolation capacitor (31) is electrically connected to the ground line (5);
the ground line (5) is perpendicular to the common source electrode (2).
4. A gallium nitride device according to claim 1, wherein two adjacent isolation capacitors (31) share a common plate when none of the isolation capacitors (31) is electrically connected to the ferrite beads (32).
5. A gallium nitride device according to claim 4, wherein the plate common to both of the isolation capacitors (31) is grounded.
6. The gallium nitride device according to claim 1, wherein a first portion of the ferrite beads (32) is located inside the substrate (11) and a second portion of the ferrite beads (32) is located outside the substrate (11).
7. A gallium nitride device according to claim 6, wherein the first portion of the control circuit (4) is located on the second surface of the substrate (11), and the second portion is located between two adjacent ferrite beads (32) and extends away from the substrate (11).
8. A method of manufacturing a gallium nitride device, comprising:
manufacturing a signal circuit (12) and isolation capacitors (31) on a first surface of a substrate (11), wherein a plurality of isolation capacitors (31) are surrounded by each signal circuit (12); the signal circuits (12) are arranged on the first surface of the substrate (11) in a matrix form of MxN, M and N being natural numbers greater than zero; the isolation capacitor (31) is arranged on the substrate (11) and is positioned between the two signal circuits (12);
manufacturing a plurality of common source electrodes (2) on a first surface of a substrate (11) and electrically connecting sources of a signal circuit (12) with the common source electrodes (2); the common source electrode (2) is arranged on the substrate (11), and the signal circuits (12) in the same row or column are electrically connected with the same common source electrode (2);
embedding ferrite beads (32) on the second surface of the substrate (11), wherein the ferrite beads (32) are electrically connected with one of the isolation capacitors (31) adjacent to the matched signal circuit (12); ferrite magnetic beads (32) are arranged on the second surface of the substrate (11), and the ferrite magnetic beads (32) are electrically connected with one of the isolation capacitors (31) adjacent to the matched signal circuit (12);
manufacturing a control circuit (4) on the second surface of the substrate (11), wherein the control circuit (4) is electrically connected with the ferrite beads (32);
wherein any two adjacent ferrite beads (32) are electrically connected with isolation capacitors (31) positioned on different sides of the matched signal circuit (12);
a signal input line (321) connected to the ferrite beads (32) is located on the second surface of the substrate (11);
the signal input lines (321) of any two adjacent ferrite beads (32) are not parallel and the current directions in any two adjacent ferrite beads (32) are not parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311366896.0A CN117096149B (en) | 2023-10-20 | 2023-10-20 | Gallium nitride device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311366896.0A CN117096149B (en) | 2023-10-20 | 2023-10-20 | Gallium nitride device and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN117096149A CN117096149A (en) | 2023-11-21 |
| CN117096149B true CN117096149B (en) | 2023-12-22 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016004338A1 (en) * | 2014-07-03 | 2016-01-07 | Transphorm Inc. | Switching circuits having ferrite beads |
| JP2018011144A (en) * | 2016-07-12 | 2018-01-18 | 株式会社東芝 | Semiconductor device and power conversion apparatus |
| CN114465458A (en) * | 2022-01-24 | 2022-05-10 | 北京绿能芯创电子科技有限公司 | GaN device parallel connection-based driving circuit, layout method and equipment |
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- 2023-10-20 CN CN202311366896.0A patent/CN117096149B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016004338A1 (en) * | 2014-07-03 | 2016-01-07 | Transphorm Inc. | Switching circuits having ferrite beads |
| JP2018011144A (en) * | 2016-07-12 | 2018-01-18 | 株式会社東芝 | Semiconductor device and power conversion apparatus |
| CN114465458A (en) * | 2022-01-24 | 2022-05-10 | 北京绿能芯创电子科技有限公司 | GaN device parallel connection-based driving circuit, layout method and equipment |
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| CN117096149A (en) | 2023-11-21 |
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