CN117092837A - 一种用于光片上网络互连的基于槽波导的光电调制器 - Google Patents
一种用于光片上网络互连的基于槽波导的光电调制器 Download PDFInfo
- Publication number
- CN117092837A CN117092837A CN202310961322.1A CN202310961322A CN117092837A CN 117092837 A CN117092837 A CN 117092837A CN 202310961322 A CN202310961322 A CN 202310961322A CN 117092837 A CN117092837 A CN 117092837A
- Authority
- CN
- China
- Prior art keywords
- layer
- refractive index
- waveguide
- silicon
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 26
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005253 cladding Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 19
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 13
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract description 9
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000011149 active material Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1223—Basic optical elements, e.g. light-guiding paths high refractive index type, i.e. high-contrast waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
- G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
本发明公开一种用于光片上网络互连的基于槽波导的光电调制器,包括二氧化硅衬底和在二氧化硅衬底上的槽波导输入输出端口以及调制区域、空气包层。槽波导由两个高折射率介质硅(Si)层、中间低折射率二氧化硅(SiO2)层组成;调制区域是在槽波导的基础上,在硅层外侧添加氧化铟锡(ITO)层、二氧化铪(HfO2)层和金属电极(Au)层由里向外叠加而成;槽波导区域以及调制区域波导厚度和宽度相等,在二氧化硅衬底的上表面依次连接;调制区域的氧化铟锡(ITO)层接地,金属电极层与正电极相接;本发明具有尺寸小、功耗低、高光约束的优势。
Description
技术领域
本发明涉及片上网络技术领域,具体涉及一种用于光片上网络互连的基于槽波导的光电调制器。
背景技术
光调制器是硅光子学的重要组成部分,它是连接光子世界和数字电子世界的桥梁。电光调制包括用调制电信号控制光信号的幅度、偏振或相位。有许多光学调制技术,如电光、电吸收和热光效应。载流子浓度变化效应被归类为电吸收机制,或者称为等离子体色散效应,这种机制控制半导体材料中自由电子和空穴的浓度,以控制其介电常数的实部和虚部。由于载波的寿命,硅中的这种效应限制了调制速度。当前报道的硅基等离子体调制器,虽然结构紧凑,但存在损耗大、调制效率低、制造工艺困难等问题。环形谐振器依赖于谐振结构,因此需要温度稳定和波长调谐。此外,它们不能提供线性相位调制。基于硅光子马赫曾德尔干涉仪的调制器提供了更高的灵活性,并能够运行到相当高的速度。然而,由于它们的非谐振特性,它们需要以毫米数量级或最多几百微米的相互作用长度来充分调制光,因此并不紧凑。
槽波导是由两个高折射率的介质条和两个高折射率的介质条之间的一个低折射率的缝隙组成的微纳结构。由于介电不连续,TE光模倾向于高度集中在两个高折射率的介质条之间。只有主电场分量垂直于槽和硅条边界的TE模式才能被有效限制在槽中,而TM模式主电场分量平行于槽和硅条边界,所以其模场不能被槽波导局域在槽中。这样的结构利用横向电场在波导边界的不连续性可以将大部分的光能量限制亚波长量级的中间低折射率层,在波导的横向能突破衍射极限.同时槽波导的中间层可以填充不同的材料,极大地丰富了波导材料的选择范围,也显著提高了作用效率,从而实现不同的功能。槽波导不仅可以实现尺寸小,而且是全介质波导,便于波导的集成。
ENZ(介电常数趋于零)效应发生在材料介电常数实部过零的点附近,从低损耗电介质过渡到有损耗金属。在这个过渡点附近的频率上,通过将光限制在亚波长几何形状中,可以大大增强光与物质的相互作用。透明导电氧化物(TCO)如氧化铟锡(ITO)、氧化铟(In2O3)和氧化镉(CdO)是制备基于ENZ效应器件的合适材料。因为它们具有可以电或光学调谐的介电常数;此外,它们的ENZ交叉点在近红外波长范围内,使它们非常适合电信应用。
发明内容
本发明所要解决的是现有片上网络的调制器存在尺寸大、调制效率低和损耗大的问题,提供一种用于光片上网络互连的基于槽波导的光电调制器。
为解决上述问题,本发明是通过以下技术方案实现的:
一种用于光片上网络互连的基于槽波导的光电调制器,包括二氧化硅衬底、和槽波导区域以及调制区域、空气包层;其中槽波导区域为相同的两部分波导,分别连接在调制区域的前后,形成调制器的波导输入端和输出端;槽波导由2个高折射率介质硅(Si)层、中间低折射率二氧化硅(SiO2)层;调制区域是在槽波导的基础上,在中间低折射率二氧化硅(SiO2)层和外侧高折射率介质硅(Si)层之间添加透明导电氧化物(TCO)层、二氧化铪层(HfO2)和金属电极层由里向外叠加而成;调制区域的透明导电氧化物(TCO)层接地,金属电极层与正电极相接。
上述方案中,调制器输入端和输出端槽波导完全对称,尺寸相等。
上述方案中,槽波导区域以及调制区域波导厚度和各层总宽度相等,在二氧化硅衬底的上表面依次连接设置。
上述方案中,调制区域的金属电极层为金(Au)层。
上述方案中,调制区域的透明导电氧化物(TCO)层为氧化铟锡(ITO)层。
上述方案中,槽波导2个高折射率介质硅(Si)层对称。
上述方案中,调制区域2个高折射率介质硅(Si)层不对称,调制区域里侧高折射率介质硅(Si)层和槽波导区域里侧高折射率介质硅(Si)层高度和宽度均相等。
上述方案中,调制区域的外侧高折射率介质硅(Si)层、添加的透明导电氧化物(TCO)层、二氧化铪(HfO2)层以及金属电极层的总宽度和槽波导的高折射率介质硅(Si)层宽度相等。
与现有技术相比,本发明具有如下特点:
1、完全自主设计了基于槽波导的调制器的结构,将表面等离子激元和活性材料透明导电氧化物ITO引入到槽波导中,实现调制功能,将其作为光电之间通信的接口。
2、基于表面等离子激元和活性材料的调制器,使得其尺寸能够达到微纳级别,从而大大缩小了调制器的尺寸。
3、调制器的槽波导结构具有高光约束和低损耗的特点,其调制机制是通过施加外电压改变等离子体部分ITO层载流子密度,改变模式折射率和衰减功率,有效降低调制器的能耗。而且可以通过改变槽波导填充材料增加调制器的灵活性。
4、虽然垂直槽波导多层结构的设计灵活性有限,但是垂直多层结构的制造工艺更为直接,工艺更简单。
附图说明
图1为一种用于光片上网络互连的基于槽波导的光电调制器的立体结构示意图。
图2为槽波导区域的立体结构示意图。
图3为调制区域的立体结构示意图。
图4为槽波导区域的横截面结构示意图。
图5为调制区域的横截面结构示意图。
图6为一种用于光片上网络互连的基于槽波导的光电调制器的俯视图。
图7为调制区域施加偏置电压的示意图。
图中标号:1:二氧化硅衬底;2:槽波导区域;3:调制区域;4:包层区域;2-1:槽波导区域里侧高折射率介质层;2-2:槽波导区域外侧高折射率介质层;2-3:槽波导区域中间低折射率层;3-1:调制区域里侧高折射率介质层;3-2:调制区域外侧高折射率介质层;3-3:调制区域中间低折射率层;3-4:氧化铟锡层;3-5:二氧化铪层;3-6:金属电极层;w:槽波导高折射率介质层宽度;ws:槽波导中间低折射率介质层宽度;h:调制器所有介质层高度;w2:调制区域外侧高折射率介质层宽度;ti:调制区域氧化铟锡层宽度;to:调制区域二氧化铪层宽度;ta:调制区域金属电极层宽度;LO:调制区域长度;L1:槽波导区域长度;L:调制器总长度;
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实例,对本发明进一步详细说明。
如图1所示。一种用于光片上网络互连的基于槽波导的光电调制器,该调制器由二氧化硅衬底1和槽波导2,调制区域3、空气包层4四部分组成。在本实例中,二氧化硅衬底1为3um高的二氧化硅(SiO2)层;槽波导2,调制区域3的所有材料层高度均为220nm。
槽波导有输入输出两个部分,完全相同,由2个高折射率介质硅(Si)层、中间低折射率二氧化硅(SiO2)层,以及外侧低折射率空气层组成;槽波导2的两个高折射率介质层2-1和2-3、中间低折射率层2-3均为长条形,高折射率介质层和中间低折射率层的宽度根据实际情况确定。在本实例中,里侧高折射率介质层为宽度280nm的硅(Si)层2-1、外侧高折射率介质层为宽度280nm的硅(Si)层2-2、中间低折射率层为宽度20nm的二氧化硅(SiO2)层2-3。立体结构示意图如图2所示,横截面结构示意图如图4所示。
调制区域是在槽波导的基础上,在中间低折射率二氧化硅层和外侧高折射率介质硅层之间添加氧化铟锡层、二氧化铪层和金属电极层由里向外叠加而成;调制区域3中,高折射率介质层3-1与槽波导2的高折射率介质层2-1宽度相等。中间低折射率层3-3与槽波导2的中间低折射率层2-3宽度相等。调制区域的外侧高折射率介质硅层、氧化铟锡层、二氧化铪层、金属电极层总宽度和槽波导的里侧高折射率介质硅层宽度相等,使得调制器波导宽度始终保持一致。在本实例中,里侧高折射率介质层为宽度w=280nm的硅(Si)层3-1、外侧高折射率介质层为宽度w2=235nm的硅(Si)层3-2、和中间低折射率层为宽度ws=20nm的二氧化硅(SiO2)层3-3、氧化铟锡层为宽度ti=20nm的氧化铟锡(ITO)层3-4、二氧化铪层为宽度to=5nm的二氧化铪(HfO2)层3-5、金属电极层为宽度ta=20nm的金(Au)层3-6。立体结构示意图如图3所示,横截面结构示意图如图5所示。
在本实例中,调制器输入、输出端槽波导长度均为L1=0.5um;调制区域3的长度为L0=2um;如图6所示。
在本实例中,硅(Si)材料折射率取3.475,二氧化硅(SiO2)材料的折射率取1.44,空气折射率取1,氧化铟锡(ITO)材料施加电压和未加电压的折射率分别为0.7+0.6i、1.96+0.003i,二氧化铪(HfO2)材料的折射率取1.98,金属电极层金(Au)材料的折射率取10.35+0.19i。
调制区域3的氧化铟锡层采用活性材料氧化铟锡(ITO)制成。ITO是具有介电常数电调特性的透明导电氧化物(Transparent Conductor Oxides,TCOs)。通过施加外加电来改变等离子体段ITO层的载流子密度,改变模态的折射率,衰减功率。外加电压的增加使ITO的实介电常数减小,而虚介电常数增大。
调制区域3的二氧化铪层采用二氧化铪(HfO2)制成。HfO2是一种常用的介电介质,通常用于基于ITO的光子器件,因为它具有高直流介电常数k=25,可以在低偏置电压下在ITO界面形成高载流子浓度。用一层氧化铪(HfO2)介质材料将ITO层与Au层隔离,以便在对金属施加电场时将载流子保持在ITO层上,其能够有效减小调制区域的尺寸
利用混合表面等离子激元,在调制区域添加了一个可调谐的ITO层,以形成一个电容器,是调制器的可调谐的位置。调制区域3的氧化铟锡层(3-4)接地,金属电极层(3-6)与正电极相接,以实现偏置电压的施加。
当调制区域3施加偏置电压时,金属电极层会形成正极自由电子的聚集,氧化铟锡层会形成负极自由电子的聚集,Si-HfO2-ITO结构形成了一个MOS电容器,ITO-HfO2界面的载流子密度增加,如图7所示。
在适当的电压下,ITO的相位从导电介电状态转变为纯金属状态。ITO堆积层中存在薄金属区,可激发ITO-HfO2界面处的有损表面波。在金属和介电介质之间的界面处出现的表面波称为表面等离子激元极化子。由于有损耗的等离子体模式,调制区域导光经历了高功率衰减,因此在输出硅波导处导光强度降低。如果周期性地施加电场,则可以在输出端口处获得随时间变化的光输出功率,从而实现调制功能。
在本实施例中,基于槽波导的光调制器是基于垂直多层结构,可以按顺序沉积,然后一起蚀刻。通过电子束光刻在绝缘体上的硅平台上定义硅槽波导模式,然后将硅干蚀刻一个中间狭缝层。然后通过原子层沉积技术沉积Au层、HfO2层和ITO层。最后,利用升射工艺和标准溅射机选择性地将狭缝层材料沉积在波导狭缝上。
通过控制偏置电压对调制区域3实现光通路(ON)和光断路(OFF)两个状态的双偏置操作:
(1)若金属电极层上施加的偏置电压为0时,模式被限制在SiO2层中,此时为通路ON状态。
(2)若金属电极层上施加适当的偏置电压为时,在ITO-HfO2界面处产生载流子,外加电压的增加使ITO的实介电常数减小,而虚介电常数增大,ITO积累层的非零虚部导致了导超模光功率的高吸收。因此,硅波导输出端的光功率被衰减。由于自由载流子在ITO-HfO2界面上的积累,模式被限制在ITO层上,此时为断路OFF状态。
综上所述,该调制器可以通过偏置电压控制光的通断,实现光调制器的功能。
需要说明的是,尽管以上本发明所述的实施例是说明性的,但这并非是对本发明的限制,因此本发明并不局限于上述具体实施方式中。在不脱离本发明原理的情况下,凡是本领域技术人员在本发明的启示下获得的其它实施方式,均视为在本发明的保护之内。
Claims (5)
1.一种用于光片上网络互连的基于槽波导的光电调制器,该调制器由二氧化硅衬底(1)和槽波导(2)、调制区域(3)、空气包层(4)四部分组成。在本实例中,二氧化硅衬底(1)为3um高的二氧化硅(SiO2)层;槽波导(2),调制区域(3)的所有材料层高度均为220nm。
槽波导有输入输出两个部分,且完全相同,由2个高折射率介质硅(Si)层、中间低折射率二氧化硅(SiO2)组成;在本实例中,里侧高折射率介质层为宽度280nm的硅(Si)层(2-1)、外侧高折射率介质层为宽度280nm的硅(Si)层(2-2)、中间低折射率层为宽度20nm的二氧化硅(SiO2)层(2-3)。
调制区域是在槽波导的基础上,在中间低折射率二氧化硅层和外侧高折射率介质硅层之间添加氧化铟锡层、二氧化铪层和金属电极层由里向外叠加而成;在本实例中,里侧高折射率介质层为宽度280nm的硅(Si)层(3-1)、外侧高折射率介质层为宽度235nm的硅(Si)层(3-2)、和中间低折射率层为宽度20nm的二氧化硅(SiO2)层(3-3)、氧化铟锡层为宽度20nm的氧化铟锡(ITO)层(3-4)、二氧化铪层为宽度5nm的二氧化铪(HfO2)层(3-5)、金属电极层为宽度20nm的金(Au)层(3-6)。
在本实例中,调制器输入、输出端槽波导长度均为L1=0.5um;调制区域3的长度为L0=2um。
在本实例中,硅Si材料折射率取3.475,二氧化硅SiO2材料的折射率取1.44,空气折射率取1,氧化铟锡ITO材料施加电压和未加电压的折射率分别为0.7+0.6i、1.96+0.003i,二氧化铪HfO2材料的折射率取1.98,金属电极层金Au材料的折射率取10.35+0.19i。
2.根据权利要求1所述的一种用于光片上网络互连的基于槽波导的光电调制器,其特征是,调制区域(3)的氧化铟锡层(3-4)可以换成其他TCO材料。
3.根据权利要求1所述的一种用于光片上网络互连的基于槽波导的光电调制器,其特征是,金属电极层(3-6)为金(Au)层。
4.根据权利要求1所述的一种用于光片上网络互连的基于槽波导的光电调制器,其特征是,槽波导输入端和输出端口(2)和调制区域(3)的总高度度和宽度均相等。
5.根据权利要求1所述的一种用于光片上网络互连的基于槽波导的光电调制器,其特征是,槽波导的中间低折射率层(2-3)可以换成其他低折射率材料。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310961322.1A CN117092837A (zh) | 2023-08-02 | 2023-08-02 | 一种用于光片上网络互连的基于槽波导的光电调制器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310961322.1A CN117092837A (zh) | 2023-08-02 | 2023-08-02 | 一种用于光片上网络互连的基于槽波导的光电调制器 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN117092837A true CN117092837A (zh) | 2023-11-21 |
Family
ID=88781338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310961322.1A Pending CN117092837A (zh) | 2023-08-02 | 2023-08-02 | 一种用于光片上网络互连的基于槽波导的光电调制器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN117092837A (zh) |
-
2023
- 2023-08-02 CN CN202310961322.1A patent/CN117092837A/zh active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9864109B2 (en) | Nanoscale plasmonic field-effect modulator | |
US8014636B2 (en) | Electrical contacts on top of waveguide structures for efficient optical modulation in silicon photonic devices | |
JP2754957B2 (ja) | 半導体光制御素子およびその製造方法 | |
US8135243B2 (en) | Transparent conducting components and related electro-optic modulator devices | |
CN110716327B (zh) | 一种基于ito定向耦合器的硅电光调制器 | |
WO2010048195A1 (en) | Organic electro-optic modulators with transparent conducting electrodes and related device structures | |
CN107238951B (zh) | 低偏压大带宽电光调制器 | |
Sun et al. | Design of plasmonic modulators with vanadium dioxide on silicon-on-insulator | |
CN107290874B (zh) | 大带宽电光调制器 | |
Shah et al. | Enhanced performance of ITO-assisted electro-absorption optical modulator using sidewall angled silicon waveguide | |
US7079714B2 (en) | Electro-optic devices having flattened frequency response with reduced drive voltage | |
Hsu et al. | MOS capacitor-driven silicon modulators: a mini review and comparative analysis of modulation efficiency and optical loss | |
CN108681109A (zh) | 一种耗尽型行波硅基马赫增德尔电光调制器 | |
Messner et al. | Plasmonic, photonic, or hybrid? Reviewing waveguide geometries for electro-optic modulators | |
CN110456528A (zh) | 一种双波导耦合式的等离子电光调制器 | |
Dogru et al. | 0.2 v drive voltage substrate removed electro-optic Mach–Zehnder modulators with MQW cores at 1.55 μm | |
CN112363331B (zh) | 一种硅基铌酸锂混合电光调制器 | |
JP6348880B2 (ja) | 半導体マッハツェンダ光変調器 | |
US5647029A (en) | Traveling wave quantum well waveguide modulators using velocity matching for improved frequency performance | |
Passaro et al. | Scaling and optimization of MOS optical modulators in nanometer SOI waveguides | |
Kuang et al. | A dual-slot electro-optic modulator based on an epsilon-near-zero oxide | |
CN111240051A (zh) | 一种基于表面等离子定向耦合式电光调制器 | |
CN117092837A (zh) | 一种用于光片上网络互连的基于槽波导的光电调制器 | |
Shah et al. | ITO-assisted fiber-optic polarization-insensitive electro-absorption optical modulator | |
Noguchi et al. | A Ti: LiNbO/sub 3/optical intensity modulator with more than 20 GHz bandwidth and 5.2 V driving voltage |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |