CN117092473A - State monitoring method and device for power device - Google Patents
State monitoring method and device for power device Download PDFInfo
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Abstract
The embodiment of the invention relates to a method and a device for monitoring the state of a power device, wherein the method comprises the following steps: collecting state parameters of the power device under preset conditions; training a state monitoring network by using the state parameters to obtain a trained state monitoring network; collecting an online grid voltage signal of a power device to be tested, and extracting state input parameters according to the online grid voltage signal; and monitoring the state output parameters of the power device to be tested by adopting the state input parameters and the trained state monitoring network. According to the technical scheme provided by the embodiment of the invention, the state monitoring network is built through the state parameters of the power device under the preset condition, the state of the power device is monitored through the state monitoring network based on the grid voltage parameters, the working bus voltage and the load current are not required to be monitored, the settings of the bus voltage sensor and the current sensor are omitted, and the common influence problem of the aging and the temperature of the power device on the electrical parameters is not required to be considered.
Description
Technical Field
The embodiment of the invention relates to the technical field of power electronics, in particular to a state monitoring method and device of a power device.
Background
The power electronic converter is widely applied to industrial applications including electric drive of new energy automobiles, new energy power generation and the like. Power electronics power devices are one of the most critical components in converters and are also the most susceptible to failure. Insulated gate bipolar transistors (hereinafter referred to as "IGBTs") are the most widely used power devices. The state of the IGBT directly affects the reliability of the overall system. The main reasons for ageing of the IGBT power device are thermal stress, including average temperature and temperature fluctuation, and the temperature of the IGBT power device directly influences the operation safety domain of the device. The failure probability of the IGBT module is doubled every 10 ℃ of the average working temperature. Therefore, the IGBT module is of great significance to the reliability evaluation and health management of the IGBT.
In addition, the occurrence of bonding wire failure of the IGBT is the most dominant failure mode due to frequent stress impact. The bonding wires of the IGBT tend to fall off or break one by one. Timely and accurate monitoring can be carried out on the aging state of the bonding wire of the IGBT, catastrophic faults can be effectively avoided, and reliability of the IGBT and the converter can be improved through early failure early warning.
In the prior art, the IGBT state monitoring method mainly has the problems of slow measurement response, invasion to a circuit, large measurement error and the like, and is easily influenced by the emitter voltage and the load current of an IGBT device.
Disclosure of Invention
Based on the above situation in the prior art, an object of an embodiment of the present invention is to provide a method and an apparatus for monitoring a state of a power device, where the monitoring method is based on a gate voltage parameter, and does not need to monitor a working bus voltage and a load current, so that the state monitoring of the power device can be efficiently and accurately implemented.
To achieve the above object, according to one aspect of the present invention, there is provided a state monitoring method of a power device, the method comprising:
collecting state parameters of the power device under preset conditions;
training a state monitoring network by using the state parameters to obtain a trained state monitoring network;
collecting an online grid voltage signal of a power device to be tested, and extracting state input parameters according to the online grid voltage signal;
and monitoring the state output parameters of the power device to be tested by adopting the state input parameters and the trained state monitoring network, wherein the state output parameters at least comprise the bonding and bonding wire failure states of the power device.
Further, the state parameters under the preset conditions include a gate flatband voltage, a gate threshold voltage, a miller plateau pre-overshoot voltage and a miller plateau voltage of the power device under the conditions of preset busbar voltage, preset load current, preset temperature and preset various bonding wire failures.
Further, the state monitoring network at least comprises an input layer, an implicit layer and an output layer;
the input variables of the input layer comprise grid flatband voltage, grid threshold voltage, miller plateau pre-overshoot voltage and miller plateau voltage;
output variables of the output layer include junction and bond wire failure states of the power device.
Further, the state input parameters comprise a gate flatband voltage, a gate threshold voltage, a miller plateau pre-overshoot voltage and a miller plateau voltage of the power device to be predicted.
Further, the method further comprises:
and carrying out thermal management and over-temperature protection on the power device according to the monitored junction temperature of the power device, and carrying out ageing state early warning and derating control according to the monitored bonding wire failure state.
Further, the power device is an IGBT.
According to another aspect of the present invention, there is provided a condition monitoring apparatus of a power device, the apparatus comprising:
the parameter acquisition module is used for acquiring state parameters of the power device under preset conditions;
the network training module is used for training the state monitoring network by using the state parameters to obtain a trained state monitoring network;
the state monitoring module is used for collecting an online grid voltage signal of the power device to be tested and extracting state input parameters according to the online grid voltage signal;
the monitoring result acquisition module is used for monitoring the state output parameters of the power device to be tested by adopting the state input parameters and the trained state monitoring network, wherein the state output parameters at least comprise the junction and bonding wire failure states of the power device.
Further, the state parameters under the preset conditions include a gate flatband voltage, a gate threshold voltage, a miller plateau pre-overshoot voltage and a miller plateau voltage of the power device under the conditions of preset busbar voltage, preset load current, preset temperature and preset various bonding wire failures.
Further, the state monitoring network at least comprises an input layer, an implicit layer and an output layer;
the input variables of the input layer comprise grid flatband voltage, grid threshold voltage, miller plateau pre-overshoot voltage and miller plateau voltage;
output variables of the output layer include junction and bond wire failure states of the power device.
Further, the state input parameters comprise a gate flatband voltage, a gate threshold voltage, a miller plateau pre-overshoot voltage and a miller plateau voltage of the power device to be predicted.
In summary, the embodiment of the invention provides a method and a device for monitoring a state of a power device, where the method includes: collecting state parameters of the power device under preset conditions; training a state monitoring network by using the state parameters to obtain a trained state monitoring network; collecting an online grid voltage signal of a power device to be tested, and extracting state input parameters according to the online grid voltage signal; and monitoring the state output parameters of the power device to be tested by adopting the state input parameters and the trained state monitoring network, wherein the state output parameters at least comprise the bonding and bonding wire failure states of the power device. According to the technical scheme provided by the embodiment of the invention, the state monitoring network is built through the state parameters of the power device under the preset condition, the state of the power device is monitored through the state monitoring network based on the grid voltage parameters, the working bus voltage and the load current are not required to be monitored, the arrangement of a bus voltage sensor and a current sensor is omitted, the common influence problem of the aging and the temperature of the power device on the electrical parameters is not required to be considered, the problems that the power device state monitoring method needs more sensors, is complex in circuit, is difficult to apply online, has invasion, is low in resolution, has large error and the like are solved, and the efficiency and the accuracy of the state monitoring of the power device are improved.
Drawings
Fig. 1 is a main electrical quantity map of an IGBT;
fig. 2 is a waveform change schematic diagram of an electric quantity related to an IGBT during turn-on;
fig. 3 is a flowchart of a method for monitoring a state of a power device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a BP neural network-based state monitoring network according to an embodiment of the present invention;
fig. 5 is an overall flow chart of a method for monitoring a state of a power device according to an embodiment of the present invention;
fig. 6 is a schematic diagram of an overall structure of a state monitoring device of a power device according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
The objects, technical solutions and advantages of the present invention will become more apparent by the following detailed description of the present invention with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
It is to be noted that unless otherwise defined, technical or scientific terms used in one or more embodiments of the present invention should be taken in a general sense as understood by one of ordinary skill in the art to which the present invention belongs. The use of the terms "first," "second," and the like in one or more embodiments of the present invention does not denote any order, quantity, or importance, but rather the terms "first," "second," and the like are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
Aiming at the junction temperature monitoring of power electronic power devices, in particular IGBT, the prior technical proposal mainly comprises the following three types:
the first is a method based on a thermistor and a thermal impedance network, namely, measuring the temperature on the device housing or the radiator through the thermistor, and then calculating the actual junction temperature of the IGBT through the thermal impedance network.
The second is a temperature measurement method based on a thermal imager, and the method measures the surface temperature of the IGBT chip by acquiring the infrared intensity of the surface of the IGBT chip, has the advantages of quick dynamic response and incapability of being widely used in practice because the packaging of a device needs to be opened.
The third is a method for monitoring temperature-sensitive electrical parameters, such as a method for monitoring the junction temperature of an IGBT based on the on-state voltage of the IGBT. However, the on-state voltage of an IGBT is related to the on-state current of the IGBT and the failure condition, in addition to being affected by temperature.
Aiming at the bonding wire failure monitoring of the IGBT, the prior technical scheme is mainly based on the monitoring of electrical parameters. Such as IGBT bonding wire failure diagnosis methods based on-state voltage, miller platform time and other aging sensitive electrical parameters. However, these diagnostic methods require the acquisition of device operating parameters (e.g., collector voltage, collector current) in addition to aging sensitive electrical parameters. For the on-voltage-based IGBT bonding wire failure diagnosis method, the on-voltage of the IGBT needs to be acquired, and the corresponding collector on-state current and the junction temperature of the IGBT also need to be known. For the IGBT bonding wire failure diagnosis method based on the Miller platform time, besides the on-grid Miller platform time of the IGBT needs to be acquired, the corresponding IGBT collector-emitter voltage, collector-on-state current and junction temperature of the IGBT also need to be known. This makes the bonding wire state of the IGBT very complex and requires many sensors for monitoring. In order to solve the technical problems, the technical scheme of the invention provides an IGBT state monitoring method based on one electrical parameter (grid voltage) without monitoring the working bus voltage and the load current.
The inside IGBT module generally comprises an IGBT chip, copper bars and bonding wires, wherein the IGBT chip is connected with the copper bars in the module through the bonding wires, the bonding wires are high-purity aluminum wires, and the IGBT chip is connected with the copper bars through ultrasonic welding. Fig. 1 shows a map of the main electrical quantity of the IGBT, which includes the gate voltage v as shown in fig. 1 g Representing the voltage between the gate and emitter of the IGBT; collector-emitter voltage v ce Representing the voltage between the collector and emitter of the IGBT; collector current i c The current flowing through the collector of the IGBT is indicated.
Fig. 2 shows a waveform change schematic diagram of the electric quantity related to the turn-on process of the IGBT, as shown in fig. 2, curve v g 、v ce And i c Respectively show the change of the gate voltage, the collector voltage and the collector current of the IGBT in the turn-on process of the IGBT, and the change of the gate voltage v g In the course of the change of (a), the characteristic parameter grid flatband voltage V is respectively defined fb Gate threshold voltage V th Miller platform front overshoot V gp And Miller platform voltage V mil . Wherein the grid electrode has flat band voltage V f The grid voltage refers to the grid voltage of a turning point with the rising slope from small to large before the IGBT is turned on, and the grid flatband voltage is influenced by the emitter-collecting voltage and the temperature of the IGBT; gate threshold voltage V th Refers to the gate voltage at which the IGBT begins to turn on, at which time the conductive channel of the IGBT forms,the collector current starts to rise, and the gate threshold voltage is affected by the collector current and the temperature of the IGBT; miller platform front overshoot V gp The overshoot is the voltage induced by the huge di/dt of the collector current on the stray inductance of the gate loop before the gate voltage enters the miller stage, and the overshoot is related to the collector voltage, the collector current, the temperature of the IGBT and the aging degree of the bonding wire; miller plateau voltage V mil After the IGBT completes the change from 0 to the load current, the collector-emitter voltage of the IGBT starts to drop, and at this time, since the charges provided by the gate are all used to compensate the charge change of the reverse transmission capacitance, the gate voltage remains almost unchanged at this stage. The miller plateau voltage is closely related to collector current and IGBT temperature. In the technical scheme of the invention, the influences of IGBT working conditions and states on the gate flatband voltage, the gate threshold voltage, the miller platform pre-overshoot and the miller platform voltage are listed in the form of a table 1.
TABLE 1 Gate flatband Voltage, gate threshold Voltage, miller platform Pre-overshoot, and Miller platform Voltage are affected by IGBT conditions and bond wire aging conditions
Through the above analysis, the gate flatband voltage V fb Gate threshold voltage V th Miller platform front overshoot V gp Miller plateau voltage V mil The characteristic parameters of the 4 gate voltages are subject to the collector-emitter voltage V bus Collector current I L Part or all of the 4 states, IGBT temperature T, and bond wire aging a. That is, the state parameters of the 4 power devices affect the 4 electrical parameters of the power devices, and the effect of each state on each electrical parameter is monotonic. Thus, four equations can be written in theory, namely:
V fb ＝f 1 (V bus ,I L ,T,A) (1)
V th ＝f 2 (V bus ,I L ,T,A) (2)
V gp ＝f 3 (V bus ,I L ,T,A) (3)
V mil ＝f 4 (V bus ,I L ,T,A) (4)
since the effect of each state on each electrical parameter is monotonic, the inverse function can be solved to obtain an expression that is a function of the IGBT state parameter.
V bus ＝g 1 (V fb ,V th ,V gp ,V mil ) (5)
I L ＝g 2 (V fb ,V th ,V gp ,V mil ) (6)
T＝g 3 (V fb ,V th ,V gp ,V mil ) (7)
A＝g 4 (V fb ,V th ,V gp ,V mil ) (8)
That is, the 4 equations (5) - (8) include 4 unknowns (collector voltage V) bus Collector current I L The IGBT temperature T and bonding wire aging A) can clearly calculate the specific value of the unknown number. However, since the influence of each IGBT state parameter on each IGBT electrical parameter is not all linear or simple polynomial, it is difficult to completely accurately express formulas (1) - (8) as a functional expression by an analytical method.
An Artificial Neural Network (ANN) is an algorithmic mathematical model that simulates the behavioral characteristics of an animal neural network for distributed and parallel information processing. The artificial neural network can realize nonlinear mapping relation by adjusting the relation between the inside of the node and the node. The BP neural network has stronger nonlinear mapping capability based on gradient descent. Therefore, the technical scheme of the invention provides that the BP neural network is adopted to monitor the state of the IGBT, so that the problem that a specific analytical function is difficult to write can be effectively solved. The technical scheme of the invention is described in detail below with reference to the accompanying drawings. An embodiment of the present invention provides a method for monitoring a state of a power device, and a flowchart of the method for monitoring a state is shown in fig. 3, and the method includes the following steps:
s102, collecting state parameters of the power device under preset conditions. In the embodiment of the invention, the acquisition of the state parameters can be performed on a double-pulse test platform, and the double-pulse test platform can perform reliable test on power devices such as IGBT. In the step, a double-pulse test platform is built, a state parameter of a power device (taking an IGBT as an example in the embodiment) under a preset condition is adopted by the double-pulse test platform, and collector current of the IGBT is set by setting double-pulse on time; setting the temperature of the IGBT by setting the temperature of the heating plate; setting the collector-emitter voltage of the IGBT through a direct current power supply; and simulating the breaking condition of the bonding wire of the IGBT by cutting off the bonding wire. In this embodiment of the present invention, as an example, the collector current of the IGBT is set to 10%, 20%, 30%, 40% and 50% times the rated current of the IGBT, the temperature of the IGBT is set to 25 ℃, 50 ℃, 75 ℃, 100 ℃, 125 ℃ and 150 ℃, the collector voltage of the IGBT is set to 10%, 20%, 30%, 40% and 50% times the rated voltage of the IGBT, and the bonding wire breaking condition of the IGBT is set to not cut short, cut 1, cut 2 pieces … … to the remaining 1 pieces. And taking the conditions as preset conditions, and collecting state parameters of the IGBT under the conditions, wherein the state parameters comprise the gate flatband voltage, the gate threshold voltage, the miller platform pre-overshoot and the miller platform voltage of the IGBT under the conditions, and taking the parameters as a data set to train a state monitoring network.
S104, training the state monitoring network by using the state parameters to obtain a trained state monitoring network. In the embodiment of the invention, a BP neural network is adopted as a state monitoring network, and a structural schematic diagram of the state monitoring network based on the BP neural network related to the embodiment of the invention is shown in fig. 4, wherein the state monitoring network at least comprises an input layer, an hidden layer and an output layer as shown in fig. 4; the input variables of the input layer include the gate flatband voltage V fb Gate threshold voltage V th Front overshoot voltage V of Miller platform gp And Miller platform voltage V mil The method comprises the steps of carrying out a first treatment on the surface of the Since the invention aims to monitor the junction temperature and the bonding wire aging state of the IGBT, the inventionIn the embodiment of the invention, two output variables of the output layer of the BP neural network are IGBT temperature T and bonding wire aging A. The number of hidden layers may be adjusted according to the training process of the neural network. And training the state monitoring network by adopting the state parameters acquired in the step S102 to obtain a trained state monitoring network.
S106, collecting an online grid voltage signal of the power device to be tested, and extracting state input parameters according to the online grid voltage signal. And in the monitoring stage, collecting a gate voltage signal of the IGBT to be monitored, and extracting a gate flatband voltage, a gate threshold voltage, a miller plateau pre-overshoot and a miller plateau voltage of the IGBT to be monitored according to the gate voltage signal. The gate voltage sensor can be used for collecting gate voltage signals of the power device to be tested, and the collected gate voltage signals are used for extracting relevant state parameters including gate flatband voltage, gate threshold voltage, miller plateau pre-overshoot and miller plateau voltage.
S108, monitoring state output parameters of the power device to be tested by adopting the state input parameters and the trained state monitoring network, wherein the state output parameters at least comprise junction and bonding wire failure states of the power device. And the extracted gate flatband voltage, gate threshold voltage, miller platform pre-overshoot and miller platform voltage of the IGBT to be monitored are used as state input parameters to be input into a trained state monitoring network, and the state monitoring information of the IGBT to be monitored, including the IGBT temperature and bonding wire failure condition, is obtained after operation through a neural network.
Fig. 5 shows an overall flow chart of collecting each state parameter from the construction of the double-pulse test platform, training the network, and performing subsequent early warning by using the result of state monitoring. In the monitoring method provided by the embodiment of the invention, the junction and bonding wire aging state of the IGBT device can be effectively monitored by only adopting one grid voltage sensor, and the method does not need to consider bus voltage and load current, so that the emitter-collecting voltage sensor, the bus voltage sensor and the current sensor are omitted, the circuit structure of IGBT state monitoring is greatly simplified, and meanwhile, the calibration process of IGBT state monitoring is simplified. In contrast to conventional thermal infrared imager-based methods, there is no need to open the package of the device. Compared with the traditional method based on the thermistor and the thermal impedance network, the method has a faster response speed. In addition, the method provided by the embodiment of the invention does not need to consider bus voltage and load current, thereby omitting a collector-emitter voltage sensor, a bus voltage sensor and a current sensor, greatly simplifying the circuit structure of IGBT state monitoring and simplifying the calibration process of IGBT state monitoring.
According to certain alternative embodiments, the method further comprises: and carrying out thermal management and over-temperature protection on the power device according to the monitored junction temperature of the power device, and carrying out ageing state early warning and derating control according to the monitored bonding wire failure state. The heat management means that the junction temperature smoothness and the thermal stress consistency of the power device are improved, the junction temperature smoothness means that the thermal stress fluctuation amplitude of the power device is reduced by actively controlling the working mode of the device or controlling the external heat dissipation mode; the thermal stress consistency is improved by actively controlling the working mode of the devices or controlling the external heat dissipation mode, so that the temperature difference of each device of the converter is reduced, the short-circuit effect of a plurality of power devices is improved, and the reliability of the system is improved. The over-temperature protection is to perform power-down operation or temporary stop on the device when the temperature of the device exceeds a limiting threshold value, and send out early warning at the same time to avoid damage of the device due to overheating. And (3) performing ageing state early warning and derating control according to the monitored bonding wire failure state, for example, alarming the state of the device when partial breakage or ageing of the bonding wire of the device is detected, and simultaneously reducing the processing power of the device and reducing the possibility of catastrophic failure of the device.
The embodiment of the invention also provides a state monitoring device of the power device, and an overall structure schematic diagram of the device is shown in fig. 6, and the device comprises:
the parameter acquisition module 601 is configured to acquire a state parameter of the power device under a preset condition;
the network training module 602 is configured to train the state monitoring network by using the state parameter to obtain a trained state monitoring network;
the state monitoring module 603 is configured to collect an online gate voltage signal of a power device to be tested, and extract a state input parameter according to the online gate voltage signal;
the monitoring result obtaining module 604 is configured to monitor, by using the state input parameter and the trained state monitoring network, a state output parameter of the power device to be tested, where the state output parameter at least includes a junction and a bonding wire failure state of the power device.
The specific procedure of each module in the state monitoring device according to the embodiment of the present invention to realize the functions thereof is the same as each step of the state monitoring method according to the above embodiment of the present invention, and thus, a repetitive description thereof will be omitted herein.
Fig. 7 is a schematic structural diagram of an electronic device according to an embodiment of the present invention. As shown in fig. 7, the electronic device 700 includes: one or more processors 701 and a memory 702; and computer program instructions stored in the memory 702, which when executed by the processor 701, cause the processor 701 to perform the condition monitoring method of any of the embodiments described above. The processor 701 may be a Central Processing Unit (CPU) or other form of processing unit having data processing and/or instruction execution capabilities, and may control other components in the electronic device to perform the desired functions.
Memory 702 may include one or more computer program products that may include various forms of computer-readable storage media, such as volatile memory and/or non-volatile memory. Volatile memory can include, for example, random Access Memory (RAM) and/or cache memory (cache) and the like. The non-volatile memory may include, for example, read Only Memory (ROM), hard disk, flash memory, and the like. One or more computer program instructions may be stored on a computer readable storage medium and the processor 701 may execute the program instructions to implement the steps in the condition monitoring method of the various embodiments of the present invention above and/or other desired functions.
In some embodiments, the electronic device 700 may further include: input device 703 and output device 704, which are interconnected by a bus system and/or other form of connection mechanism (not shown in fig. 7). For example, when the electronic device is a stand-alone device, the input means 703 may be a communication network connector for receiving the acquired input signal from an external, removable device. In addition, the input device 703 may also include, for example, a keyboard, mouse, microphone, etc. The output device 704 may output various information to the outside, and may include, for example, a display, a speaker, a printer, a communication network, a remote output apparatus connected thereto, and the like.
In addition to the methods and apparatus described above, embodiments of the invention may also be a computer program product comprising computer program instructions which, when executed by a processor, cause the processor to perform the steps of the condition monitoring method of any of the embodiments described above.
The computer program product may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, C++ or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computing device, partly on the user's device, as a stand-alone software package, partly on the user's computing device, partly on a remote computing device, or entirely on the remote computing device or server.
Furthermore, embodiments of the present invention may also be a computer-readable storage medium, having stored thereon computer program instructions which, when executed by a processor, cause the processor to perform steps in a condition monitoring method of various embodiments of the present invention.
A computer readable storage medium may employ any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. The readable storage medium may include, for example, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or a combination of any of the foregoing. More specific examples (a non-exhaustive list) of the readable storage medium would include the following: an electrical connection having one or more wires, a portable disk, a hard disk, random Access Memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
It is to be appreciated that the processor in embodiments of the invention may be a central processing unit (Central Processing Unit, CPU), but may also be other general purpose processors, digital signal processors (Digital Signal Processor, DSP), application specific integrated circuits (Application Specific Integrated Circuit, ASIC), off-the-shelf programmable gate arrays (Field Programmable Gate Array, FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
In summary, the embodiment of the invention relates to a method and a device for monitoring a state of a power device, wherein the method comprises the following steps: collecting state parameters of the power device under preset conditions; training a state monitoring network by using the state parameters to obtain a trained state monitoring network; collecting an online grid voltage signal of a power device to be tested, and extracting state input parameters according to the online grid voltage signal; and monitoring the state output parameters of the power device to be tested by adopting the state input parameters and the trained state monitoring network, wherein the state output parameters at least comprise the bonding and bonding wire failure states of the power device. According to the technical scheme provided by the embodiment of the invention, the state monitoring network is built through the state parameters of the power device under the preset condition, the state of the power device is monitored through the state monitoring network based on the grid voltage parameters, the working bus voltage and the load current are not required to be monitored, the arrangement of a bus voltage sensor and a current sensor is omitted, the common influence problem of the aging and the temperature of the power device on the electrical parameters is not required to be considered, the problems that the power device state monitoring method needs more sensors, is complex in circuit, is difficult to apply online, has invasion, is low in resolution, has large error and the like are solved, and the efficiency and the accuracy of the state monitoring of the power device are improved.
It should be understood that the above discussion of any of the embodiments is exemplary only and is not intended to suggest that the scope of the invention (including the claims) is limited to these examples; combinations of features of the above embodiments or in different embodiments are also possible within the spirit of the invention, steps may be implemented in any order and there are many other variations of the different aspects of one or more embodiments of the invention described above which are not provided in detail for the sake of brevity. The above detailed description of the present invention is merely illustrative or explanatory of the principles of the invention and is not necessarily intended to limit the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.
Claims (10)
1. A method for monitoring a state of a power device, the method comprising:
collecting state parameters of the power device under preset conditions;
training a state monitoring network by using the state parameters to obtain a trained state monitoring network;
collecting an online grid voltage signal of a power device to be tested, and extracting state input parameters according to the online grid voltage signal;
and monitoring the state output parameters of the power device to be tested by adopting the state input parameters and the trained state monitoring network, wherein the state output parameters at least comprise the bonding and bonding wire failure states of the power device.
2. The method of claim 1, wherein the state parameters under the predetermined conditions include a gate flatband voltage, a gate threshold voltage, a miller plateau pre-overshoot voltage, and a miller plateau voltage of the power device in the event of a predetermined bus voltage, a predetermined load current, a predetermined temperature, and a predetermined plurality of bond wire failures.
3. The method of claim 2, wherein the state monitoring network comprises at least an input layer, an hidden layer, and an output layer;
the input variables of the input layer comprise grid flatband voltage, grid threshold voltage, miller plateau pre-overshoot voltage and miller plateau voltage;
output variables of the output layer include junction and bond wire failure states of the power device.
4. A method according to claim 3, wherein the state input parameters include gate flatband voltage, gate threshold voltage, miller plateau pre-overshoot voltage and miller plateau voltage of the power device to be predicted.
5. The method according to any one of claims 1-4, further comprising:
and carrying out thermal management and over-temperature protection on the power device according to the monitored junction temperature of the power device, and carrying out ageing state early warning and derating control according to the monitored bonding wire failure state.
6. The method of claim 5, wherein the power device is an IGBT.
7. A condition monitoring apparatus for a power device, the apparatus comprising:
the parameter acquisition module is used for acquiring state parameters of the power device under preset conditions;
the network training module is used for training the state monitoring network by using the state parameters to obtain a trained state monitoring network;
the state monitoring module is used for collecting an online grid voltage signal of the power device to be tested and extracting state input parameters according to the online grid voltage signal;
the monitoring result acquisition module is used for monitoring the state output parameters of the power device to be tested by adopting the state input parameters and the trained state monitoring network, wherein the state output parameters at least comprise the junction and bonding wire failure states of the power device.
8. The apparatus of claim 7, wherein the state parameters under the predetermined conditions include a gate flatband voltage, a gate threshold voltage, a miller plateau pre-overshoot voltage, and a miller plateau voltage of the power device in the event of a predetermined bus voltage, a predetermined load current, a predetermined temperature, and a predetermined plurality of bond wire failures.
9. The apparatus of claim 8, wherein the state monitoring network comprises at least an input layer, an hidden layer, and an output layer;
the input variables of the input layer comprise grid flatband voltage, grid threshold voltage, miller plateau pre-overshoot voltage and miller plateau voltage;
output variables of the output layer include junction and bond wire failure states of the power device.
10. The apparatus of claim 9, wherein the state input parameters comprise a gate flatband voltage, a gate threshold voltage, a miller plateau pre-overshoot voltage, and a miller plateau voltage of the power device to be predicted.
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