CN117081539B - Surface acoustic wave resonator and MEMS device - Google Patents
Surface acoustic wave resonator and MEMS device Download PDFInfo
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- CN117081539B CN117081539B CN202311322298.3A CN202311322298A CN117081539B CN 117081539 B CN117081539 B CN 117081539B CN 202311322298 A CN202311322298 A CN 202311322298A CN 117081539 B CN117081539 B CN 117081539B
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- compensation layer
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 36
- 239000003990 capacitor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000026683 transduction Effects 0.000 claims abstract description 16
- 238000010361 transduction Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000004804 winding Methods 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 18
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02653—Grooves or arrays buried in the substrate
- H03H9/02661—Grooves or arrays buried in the substrate being located inside the interdigital transducers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02685—Grating lines having particular arrangements
- H03H9/02724—Comb like grating lines
- H03H9/02732—Bilateral comb like grating lines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
Abstract
The application relates to the technical field of resonators, and discloses a surface acoustic wave resonator, which comprises: a substrate for acoustic-electric transduction; the outer surface of the substrate is provided with an interdigital electrode structure and a temperature compensation layer; an interdigital electrode structure for exciting acoustic-electric transduction by applying a voltage; a temperature compensation layer wrapping the interdigital electrode structure; the electronic element is positioned in the reflecting gate region of the interdigital electrode structure; and the electronic element is partially or completely wrapped in the temperature compensation layer; the electronic component includes an inductor or a capacitor. In this way, the inductor or the capacitor is disposed in the reflective gate region of the interdigital electrode structure, not in the non-reflective gate region of the interdigital electrode structure, and the sound velocity of the surface acoustic wave resonator can be unaffected. The application also discloses MEMS equipment.
Description
Technical Field
The present application relates to the technical field of resonators, for example, to a surface acoustic wave resonator and an MEMS device.
Background
Currently, in a surface acoustic wave resonator, a parallel capacitor or a series inductor is usually disposed in a non-reflective gate region of an interdigital electrode structure. However, placing a capacitor or inductor in the non-reflective grating region affects the acoustic velocity of the saw resonator.
Disclosure of Invention
The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview, and is intended to neither identify key/critical elements nor delineate the scope of such embodiments, but is intended as a prelude to the more detailed description that follows.
The embodiment of the invention provides a surface acoustic wave resonator and MEMS equipment, so that the sound velocity of the surface acoustic wave resonator is not influenced.
In some embodiments, a surface acoustic wave resonator includes: a substrate for acoustic-electric transduction; the outer surface of the substrate is provided with an interdigital electrode structure and a temperature compensation layer; an interdigital electrode structure for exciting acoustic-electric transduction by applying a voltage; a temperature compensation layer wrapping the interdigital electrode structure; the electronic element is positioned in the reflecting gate region of the interdigital electrode structure; and the electronic element is partially or completely wrapped in the temperature compensation layer; the electronic component includes an inductor or a capacitor.
In some embodiments, the set height of the electronic components in the temperature compensation layer is less than a preset height; the preset height is half the thickness of the temperature compensation layer.
In some embodiments, the electronic component is an inductor; the inductor is square winding inductance.
In some embodiments, the electronic component is a capacitor; the capacitor is an interdigital electrode array capacitor or a parallel flat plate capacitor.
In some embodiments, the capacitor is parallel to the mirror of the interdigitated electrode structure.
In some embodiments, the capacitor is perpendicular to the mirror of the interdigitated electrode structure.
In some embodiments, the substrate is made of lithium niobate crystals, lithium tantalate crystals, aluminum nitride, zinc oxide, or piezoelectric ceramics.
In some embodiments, the interdigitated electrode structure is composed of one or more metals of titanium, chromium, silver, copper, molybdenum, platinum, tungsten, and aluminum.
In some embodiments, the temperature compensation layer is comprised of silicon dioxide.
In some embodiments, the MEMS device includes a surface acoustic wave resonator as described above.
The embodiment of the invention provides a surface acoustic wave resonator and MEMS equipment. The following technical effects can be achieved: by providing a substrate for acoustic-electric transduction; an interdigital electrode structure and a temperature compensation layer are arranged on the outer surface of the substrate. The interdigital electrode structure is used to excite acoustic-electric transduction by applying a voltage. The temperature compensation layer wraps the interdigital electrode structure. The electronic component includes an inductor or a capacitor. The electronic element is positioned in the reflective gate region of the interdigital electrode structure and is partially or completely wrapped in the temperature compensation layer. In this way, the inductor or the capacitor is disposed in the reflective gate region of the interdigital electrode structure, not in the non-reflective gate region of the interdigital electrode structure, and the sound velocity of the surface acoustic wave resonator can be unaffected.
The foregoing general description and the following description are exemplary and explanatory only and are not restrictive of the application.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like references indicate similar elements, and in which like reference numerals refer to similar elements, and in which:
fig. 1 is a schematic structural diagram of a surface acoustic wave resonator according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a partial top view of a SAW resonator in accordance with an embodiment of the present invention;
FIG. 3 is a schematic side view of a SAW resonator according to an embodiment of the present invention;
FIG. 4 is a schematic top view of another surface acoustic wave resonator according to an embodiment of the present invention;
FIG. 5 is a schematic top view of a portion of a further SAW resonator provided in an embodiment of the present invention;
FIG. 6 is a schematic diagram of a first frequency response curve provided by an embodiment of the present invention;
FIG. 7 is a schematic diagram of a second frequency response curve provided by an embodiment of the present invention;
FIG. 8 is a schematic diagram of a third frequency response curve provided by an embodiment of the present invention;
FIG. 9 is a diagram of a fourth frequency response curve provided by an embodiment of the present invention;
FIG. 10 is a schematic diagram of a fifth frequency response curve provided by an embodiment of the present invention;
FIG. 11 is a schematic diagram of a sixth frequency response curve provided by an embodiment of the present invention;
FIG. 12 is a schematic diagram of a seventh frequency response curve provided by an embodiment of the present invention;
fig. 13 is a schematic diagram of an eighth frequency response curve according to an embodiment of the present invention.
Reference numerals:
1: a substrate; 2: an interdigital electrode structure; 3: a temperature compensation layer; 4: an electronic component; 5: an interdigital structure; 6: a reflective grating structure; 7: a first metal layer; 8: a second metal layer.
Detailed Description
For a more complete understanding of the nature and the technical content of the embodiments of the present invention, reference should be made to the following detailed description of embodiments of the invention, taken in conjunction with the accompanying drawings, which are meant to be illustrative only and not limiting of the embodiments of the invention. In the following description of the technology, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, one or more embodiments may still be practiced without these details. In other instances, well-known structures and devices may be shown simplified in order to simplify the drawing.
The terms first, second and the like in the description and in the claims of embodiments of the invention and in the above-described figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe embodiments of the invention herein. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion.
In the embodiments of the present invention, the terms "upper", "lower", "inner", "middle", "outer", "front", "rear", and the like indicate the azimuth or the positional relationship based on the azimuth or the positional relationship shown in the drawings. These terms are only used to facilitate a better description of embodiments of the invention and their examples and are not intended to limit the scope of the indicated devices, elements or components to the particular orientation or to be constructed and operated in a particular orientation. Also, some of the terms described above may be used to indicate other meanings in addition to orientation or positional relationships, for example, the term "upper" may also be used to indicate some sort of attachment or connection in some cases. The specific meaning of these terms in embodiments of the present invention will be understood by those of ordinary skill in the art in view of the specific circumstances.
In addition, the terms "disposed," "connected," "secured" and "affixed" are to be construed broadly. For example, "connected" may be in a fixed connection, a removable connection, or a unitary construction; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements, or components. The specific meaning of the above terms in the embodiments of the present invention will be understood by those of ordinary skill in the art according to the specific circumstances.
The term "plurality" means two or more, unless otherwise indicated.
In the embodiment of the invention, the character "/" indicates that the front object and the rear object are in an OR relationship. For example, A/B represents: a or B.
The term "and/or" is an associative relationship that describes an object, meaning that there may be three relationships. For example, a and/or B, represent: a or B, or, A and B.
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other.
Referring to fig. 1, an embodiment of the present invention provides a surface acoustic wave resonator, including: a substrate 1, an interdigital electrode structure 2, a temperature compensation layer 3 and an electronic component 4. A substrate 1 for acoustic-electric transduction; the outer surface of the substrate 1 is provided with an interdigital electrode structure 2 and a temperature compensation layer 3; an interdigital electrode structure 2 for exciting acoustic-electric transduction by applying a voltage; a temperature compensation layer 3 wrapping the interdigital electrode structure 2; an electronic element 4 located in the reflective gate region of the interdigital electrode structure 2; and the electronic element 4 is partially or fully wrapped in the temperature compensation layer 3; the electronic component 4 comprises an inductor or a capacitor.
By adopting the surface acoustic wave resonator provided by the embodiment of the application, the substrate for acoustic-electric transduction is arranged; an interdigital electrode structure and a temperature compensation layer are arranged on the outer surface of the substrate. The interdigital electrode structure is used to excite acoustic-electric transduction by applying a voltage. The temperature compensation layer wraps the interdigital electrode structure. The electronic component includes an inductor or a capacitor. The electronic element is positioned in the reflecting gate region of the interdigital electrode structure and is partially or completely wrapped in the temperature compensation layer. In this way, the inductor or the capacitor is disposed in the reflective gate region of the interdigital electrode structure, not in the non-reflective gate region of the interdigital electrode structure, and the sound velocity of the surface acoustic wave resonator can be unaffected.
Optionally, the interdigital electrode structure comprises: the device comprises an interdigital structure, a reflecting grating structure and a first metal layer. The interdigital structure includes two bus bars and a plurality of electrode fingers. The two bus bars are divided into a first bus bar and a second bus bar. The electrode fingers vertically connected to the first bus bar are first electrode fingers. The electrode fingers vertically connected on the second bus bar are second electrode fingers. The first bus bar and the second bus bar are parallel to each other, and the first electrode fingers of the first bus bar and the second electrode fingers of the second bus bar are alternately arranged in an interdigital shape. A first metal layer is disposed on the reflective gate structure and each of the bus bars, respectively. The reflective grating structure comprises a first vertical bar, a second vertical bar and a plurality of transverse bars. The first vertical bar and the second vertical bar are arranged in parallel. The transverse bars are parallel to each other and are respectively and vertically connected with the first vertical bars, and meanwhile, the transverse bars are respectively and vertically connected with the second vertical bars. The first vertical bars and the second vertical bars are respectively provided with a first metal layer, and the first metal layers arranged on the first vertical bars are not contacted with the first metal layers arranged on the second vertical bars.
Optionally, the interdigital electrode structure comprises: the device comprises an interdigital structure, a reflecting gate structure, a first metal layer and a second metal layer. The interdigital structure includes two bus bars and a plurality of electrode fingers. The two bus bars are divided into a first bus bar and a second bus bar. The electrode fingers vertically connected to the first bus bar are first electrode fingers. The electrode fingers vertically connected on the second bus bar are second electrode fingers. The first bus bar and the second bus bar are parallel to each other, and the first electrode fingers of the first bus bar and the second electrode fingers of the second bus bar are alternately arranged in an interdigital shape. A first metal layer is disposed on the reflective gate structure and each of the bus bars, respectively. The reflective grating structure comprises a first vertical bar, a second vertical bar and a plurality of transverse bars. The first vertical bar and the second vertical bar are arranged in parallel. The transverse bars are parallel to each other, are respectively and vertically connected with the first vertical bars, and are respectively and vertically connected with the second vertical bars. The first vertical bars and the second vertical bars are respectively provided with a first metal layer, and the first metal layers arranged on the first vertical bars are not contacted with the first metal layers arranged on the second vertical bars. A second metal layer is disposed at the end regions of the electrode fingers. Optionally, a region from the electrode finger tip edge to a preset length from the electrode finger tip edge on the electrode finger is taken as the electrode finger tip region. The second metal layers are arranged at the tail end area of each electrode finger in a scattered manner or are in a strip-shaped structure and cross the tail end area of the electrode finger belonging to the same side.
In some embodiments, the temperature compensation layer encapsulates the interdigitated electrode structure. That is, the temperature compensation layer partially wraps the interdigital electrode structure, exposing the first metal layer of the interdigital electrode structure.
In some embodiments, the reflective grating structure is located in a region, i.e., a reflective grating region. The non-reflective gate area is the area where the reflective gate structure is located in the interdigital electrode structure.
Optionally, the electronic component is an inductor, and the inductor is a square winding inductor.
In some embodiments, fig. 2 is a partial top view schematic of a surface acoustic wave resonator. As shown in connection with fig. 2, the interdigital electrode structure includes: an interdigital structure 5, a reflective gate structure 6, a first metal layer 7 and a second metal layer 8. The electronic component 4 is an inductor, which is a square wound inductor. The outer surface of the substrate 1 is provided with an interdigital electrode structure and a temperature compensation layer. The temperature compensation layer partially wraps the interdigital electrode structure, and the first metal layer of the interdigital electrode structure is exposed. One part of the square winding inductor is wrapped in the temperature compensation layer, and the other part of the square winding inductor is arranged on the temperature compensation layer. One end of the square winding inductor is connected with the first metal layer arranged on the first vertical bar, and the other end of the square winding inductor is connected with the first metal layer arranged on the second vertical bar. The second metal layer is in a vertical strip shape and is arranged at the tail end area of the electrode finger. In this way, the inductor is arranged in the reflective gate region of the interdigital electrode structure, not in the non-reflective gate region of the interdigital electrode structure, so that the sound velocity of the surface acoustic wave resonator can not be influenced.
Optionally, the electronic component is a capacitor; the capacitor is an interdigital electrode array capacitor or a parallel flat plate capacitor.
In some embodiments, an interdigital electrode array capacitor, comprising: a third bus bar, a fourth bus bar, a third electrode finger, and a fourth electrode finger. The third bus bar and the fourth bus bar are parallel to each other. The electrode fingers vertically connected on the third bus bar are third electrode fingers. The electrode fingers vertically connected on the fourth bus bar are fourth electrode fingers. The third bus bar and the fourth bus bar are parallel to each other, and the third electrode fingers of the third bus bar and the fourth electrode fingers of the fourth bus bar are alternately arranged in an interdigital shape.
In some embodiments, the substrate 1 is provided with an interdigitated electrode structure 2 and a temperature compensation layer 3. The electronic component 4 is located in the reflective gate region of the interdigital electrode structure, and the electronic component 4 is entirely wrapped in the temperature compensation layer 3. At this time, a schematic side view of the surface acoustic wave resonator shown in fig. 3 is obtained. In this way, the electronic component is disposed in the reflective gate region of the interdigital electrode structure, not in the non-reflective gate region of the interdigital electrode structure, and the sound velocity of the surface acoustic wave resonator can be unaffected. Meanwhile, since a common capacitance or inductance is generally implemented by the interdigital electrode, the size of the resonator may be relatively large. The capacitor or the inductor is realized in the temperature compensation layer, and does not occupy extra space, so that the size of the resonator is not required to be large. And meanwhile, the Q value and the effective electromechanical coupling coefficient of the resonator are not influenced.
Optionally, the capacitor is parallel to the mirror of the interdigitated electrode structure. In some embodiments, the plurality of bars of the reflective grating structure in the interdigitated electrode structure are referred to as mirrors.
In some embodiments, fig. 4 is a partial top view schematic of a surface acoustic wave resonator. As shown in connection with fig. 4, the interdigital electrode structure includes: an interdigital structure 5, a reflective gate structure 6, a first metal layer 7 and a second metal layer 8. The electronic component 4 is a capacitor, which is an interdigital electrode array type capacitor. The outer surface of the substrate 1 is provided with an interdigital electrode structure and a temperature compensation layer. The temperature compensation layer partially wraps the interdigital electrode structure, and the first metal layer of the interdigital electrode structure is exposed. The interdigital electrode array capacitor is entirely enclosed in a temperature compensation layer. The third electrode finger and the fourth electrode finger of the interdigital electrode array capacitor are parallel to the reflecting mirror of the interdigital electrode structure. And the third electrode finger is positioned on the transverse bar of the reflecting grating structure and covers part of the transverse bar. The fourth electrode finger is positioned on the transverse bar of the reflecting grating structure and covers part of the transverse bar. The third electrode finger and the fourth electrode finger cover different crossbars. The third bus bar of the interdigital electrode array capacitor is connected with the first metal layer arranged on the first vertical bar. The fourth bus bar of the interdigital electrode array capacitor is connected with the first metal layer arranged on the second vertical bar. The second metal layer is in a vertical strip shape and is arranged at the tail end area of the electrode finger. In this way, the capacitor is arranged in the reflective gate region of the interdigital electrode structure, not in the non-reflective gate region of the interdigital electrode structure, so that the sound velocity of the surface acoustic wave resonator can not be affected.
Optionally, the capacitor is perpendicular to the mirror of the interdigitated electrode structure.
In some embodiments, fig. 5 is a partial top view schematic of a surface acoustic wave resonator. As shown in connection with fig. 5, the interdigital electrode structure includes: an interdigital structure 5, a reflective gate structure 6, a first metal layer 7 and a second metal layer 8. The electronic component 4 is a capacitor, which is an interdigital electrode array type capacitor. The outer surface of the substrate 1 is provided with an interdigital electrode structure and a temperature compensation layer. The temperature compensation layer partially wraps the interdigital electrode structure, and the first metal layer of the interdigital electrode structure is exposed. The interdigital electrode array capacitor is entirely enclosed in a temperature compensation layer. The third electrode finger and the fourth electrode finger of the interdigital electrode array capacitor are perpendicular to the reflecting mirror of the interdigital electrode structure. The third bus bar of the interdigital electrode array capacitor is connected with the first metal layer arranged on the first vertical bar. The fourth bus bar of the interdigital electrode array capacitor is connected with the first metal layer arranged on the second vertical bar. The second metal layer is in a vertical strip shape and is arranged at the tail end area of the electrode finger. In this way, the capacitor is arranged in the reflective gate region of the interdigital electrode structure, not in the non-reflective gate region of the interdigital electrode structure, so that the sound velocity of the surface acoustic wave resonator can not be affected.
Alternatively, the substrate is made of lithium niobate crystal, lithium tantalate crystal, aluminum nitride, zinc oxide, or piezoelectric ceramic.
Optionally, the interdigitated electrode structure is comprised of one or more metals of titanium, chromium, silver, copper, molybdenum, platinum, tungsten, and aluminum.
Optionally, the temperature compensation layer is comprised of silicon dioxide. Or the temperature compensation layer is made of SiN silicon nitride, alN aluminum nitride, amorphous silicon or GaN gallium nitride and other materials which are overlapped with SiO2 silicon dioxide. The SiN silicon nitride, alN aluminum nitride, amorphous silicon, gaN gallium nitride and other materials contact the interdigital electrode structure, so that oxidation of metal for manufacturing the interdigital electrode structure during SiO2 deposition is prevented.
Optionally, the set height of the electronic component in the temperature compensation layer is smaller than a preset height; the preset height is half the thickness of the temperature compensation layer. The height of the electronic component in the temperature compensation layer, i.e. the distance between the outer surface of the substrate on the side contacting the interdigital electrodes and the electronic component.
In some embodiments, the temperature compensation layer has a thickness of 0.3lambda, such as 1.2um. Where lambda is the wavelength of the resonator. um is a micron.
In some embodiments, the interdigital structure is provided with a thickness of 0.05lambda. The thickness of the temperature compensation layer was 1.2um. In the case where the height of the electronic component disposed in the temperature compensation layer is 0.05um, a first frequency response diagram as shown in fig. 6 is obtained. As shown in fig. 6, the Y parameter of the frequency response curve is Y (1, 1). Meanwhile, in the case where the set height of the electronic component in the temperature compensation layer is 0.05um, the resonance frequency is 923MHz. The antiresonant frequency is 941MHz. The effective electromechanical coupling coefficient is 0.046. The resonator quality factor (Body Q) maximum is 1762. In the case where the arrangement height of the electronic components in the temperature compensation layer is 0.1um, a second frequency response diagram as shown in fig. 7 is obtained. As shown in fig. 7, the Y parameter of the frequency response curve is Y (2, 2). Meanwhile, in the case where the set height of the electronic component in the temperature compensation layer is 0.1um, the resonance frequency is 924MHz. The antiresonant frequency is 935MHz. The effective electromechanical coupling coefficient is 0.029. The resonator quality factor maximum is 1767. In the case where the arrangement height of the electronic component in the temperature compensation layer is 0.2um, a third frequency response diagram as shown in fig. 8 is obtained. As shown in fig. 8, the Y parameter of the frequency response curve is Y (3, 3). Meanwhile, in the case where the set height of the electronic component in the temperature compensation layer is 0.2um, the resonance frequency is 918MHz. The antiresonant frequency was 924MHz. The effective electromechanical coupling coefficient is 0.016. The resonator quality factor maximum is 1791. In the case where the arrangement height of the electronic components in the temperature compensation layer is 0.25um, a fourth frequency response diagram as shown in fig. 9 is obtained. As shown in fig. 9, the Y parameter of the frequency response curve is Y (4, 4). Meanwhile, in the case where the set height of the electronic component in the temperature compensation layer is 0.25um, the resonance frequency is 914MHz. The antiresonant frequency is 918MHz. The effective electromechanical coupling coefficient is 0.011. The resonator quality factor maximum is 1812. In the case where the arrangement height of the electronic component in the temperature compensation layer is 0.3um, a fifth frequency response diagram as shown in fig. 10 is obtained. As shown in fig. 10, the Y parameter of the frequency response curve is Y (5, 5). Meanwhile, in the case where the set height of the electronic component in the temperature compensation layer is 0.3um, the resonance frequency is 909MHz. The antiresonant frequency was 912MHz. The effective electromechanical coupling coefficient was 0.008. The resonator quality factor maximum is 1830. In the case where the arrangement height of the electronic component in the temperature compensation layer is 0.4um, a sixth frequency response diagram as shown in fig. 11 is obtained. As shown in fig. 11, the Y parameter of the frequency response curve is Y (6, 6). Meanwhile, in the case where the set height of the electronic component in the temperature compensation layer is 0.4um, the resonance frequency is 898MHz. The antiresonant frequency is 900MHz. The effective electromechanical coupling coefficient is 0.005. The resonator quality factor maximum is 1877. In the case where the arrangement height of the electronic component in the temperature compensation layer is 0.5um, a seventh frequency response diagram as shown in fig. 12 is obtained. As shown in fig. 12, the Y parameter of the frequency response curve is Y (7, 7). Meanwhile, in the case where the set height of the electronic component in the temperature compensation layer is 0.5um, the resonance frequency is 887MHz. The antiresonant frequency is 888MHz. The effective electromechanical coupling coefficient is 0.003. The resonator quality factor maximum is 1927. In the case where the arrangement height of the electronic component in the temperature compensation layer is 0um, an eighth frequency response diagram as shown in fig. 13 is obtained. As shown in fig. 13, the Y parameter of the frequency response curve is Y (8, 8). Meanwhile, in the case where the set height of the electronic component in the temperature compensation layer is 0um, the resonance frequency is 907MHz. The antiresonant frequency is 944MHz. The effective electromechanical coupling coefficient is 0.093. The resonator quality factor maximum is 1745. According to the simulation results, as the setting height of the electronic components in the temperature compensation layer is increased, each performance of the resonator is gradually improved. Particularly in case the height of the electronic components arranged in the temperature compensation layer is smaller than half the thickness of the temperature compensation layer, the performance of the resonator will be better.
The embodiment of the invention provides MEMS equipment, which comprises the surface acoustic wave resonator. A surface acoustic wave resonator comprising: a substrate, an interdigital electrode structure, a temperature compensation layer, and an electronic component. The substrate is used for acoustic-electric transduction. The outer surface of the substrate is provided with an interdigital electrode structure and a temperature compensation layer. The interdigitated electrode structure is energized by applying a voltage to excite acoustic-electric transduction. The temperature compensation layer wraps the interdigital electrode structure. The electronic element is positioned in the reflective gate region of the interdigital electrode structure, and the electronic element is partially or completely wrapped in the temperature compensation layer. The electronic component includes an inductor or a capacitor.
By adopting the MEMS device provided by the embodiment of the invention, the substrate for acoustic-electric transduction is arranged; an interdigital electrode structure and a temperature compensation layer are arranged on the outer surface of the substrate. The interdigital electrode structure is used to excite acoustic-electric transduction by applying a voltage. The temperature compensation layer wraps the interdigital electrode structure. The electronic component includes an inductor or a capacitor. The electronic element is positioned in the reflecting gate region of the interdigital electrode structure and is partially or completely wrapped in the temperature compensation layer. In this way, the inductor or the capacitor is disposed in the reflective gate region of the interdigital electrode structure, not in the non-reflective gate region of the interdigital electrode structure, and the sound velocity of the surface acoustic wave resonator can be unaffected. And further, the acoustic performance of the MEMS device having the surface acoustic wave resonator can be improved.
Optionally, the MEMS (Micro-Electro-mechanical system) device includes: level sensors, oscillators, microphones, radio frequency switches or filters, etc.
The above description and the drawings illustrate embodiments of the invention sufficiently to enable those skilled in the art to practice them. Other embodiments may involve structural, logical, electrical, process, and other changes. The embodiments represent only possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in, or substituted for, those of others. Moreover, the terminology used in the present application is for the purpose of describing embodiments only and is not intended to limit the claims. As used in the description of the embodiments and the claims, the singular forms "a," "an," and "the" (the) are intended to include the plural forms as well, unless the context clearly indicates otherwise. Similarly, the term "and/or" as used in this application is meant to encompass any and all possible combinations of one or more of the associated listed. Furthermore, when used in this application, the terms "comprises," "comprising," and/or "includes," and variations thereof, mean that the stated features, integers, steps, operations, elements, and/or components are present, but that the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof is not precluded. Without further limitation, an element defined by the phrase "comprising one …" does not exclude the presence of other like elements in a process, method or apparatus comprising such elements. In this context, each embodiment may be described with emphasis on the differences from the other embodiments, and the same similar parts between the various embodiments may be referred to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method sections disclosed in the embodiments, the description of the method sections may be referred to for relevance.
Claims (9)
1. A surface acoustic wave resonator, comprising:
a substrate for acoustic-electric transduction; the outer surface of the substrate is provided with an interdigital electrode structure and a temperature compensation layer;
an interdigital electrode structure for exciting acoustic-electric transduction by applying a voltage;
a temperature compensation layer wrapping the interdigital electrode structure;
the electronic element is positioned in the reflecting gate region of the interdigital electrode structure; and the electronic element is partially or completely wrapped in the temperature compensation layer; the electronic component includes an inductor or a capacitor; the setting height of the electronic element in the temperature compensation layer is smaller than the preset height; the preset height is half the thickness of the temperature compensation layer.
2. The surface acoustic wave resonator according to claim 1, characterized in that the electronic element is an inductor; the inductor is square winding inductance.
3. The surface acoustic wave resonator according to claim 1, characterized in that the electronic element is a capacitor; the capacitor is an interdigital electrode array capacitor or a parallel flat plate capacitor.
4. A saw resonator as claimed in claim 3, wherein the capacitor is parallel to the mirror of the interdigital electrode structure.
5. A saw resonator as claimed in claim 3, wherein the capacitor is perpendicular to the mirror of the interdigital electrode structure.
6. The surface acoustic wave resonator according to any one of claims 1 to 5, characterized in that the substrate is made of lithium niobate crystal, lithium tantalate crystal, aluminum nitride, zinc oxide, or piezoelectric ceramic.
7. The surface acoustic wave resonator according to any of claims 1 to 5, characterized in that the interdigital electrode structure is composed of one or more metals of titanium, chromium, silver, copper, molybdenum, platinum, tungsten and aluminum.
8. The surface acoustic wave resonator according to any of claims 1 to 5, characterized in that the temperature compensation layer is composed of silicon dioxide.
9. A MEMS device comprising a surface acoustic wave resonator as claimed in any one of claims 1 to 8.
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