CN117080317A - Preparation method of light bar and display device - Google Patents
Preparation method of light bar and display device Download PDFInfo
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- CN117080317A CN117080317A CN202310765466.XA CN202310765466A CN117080317A CN 117080317 A CN117080317 A CN 117080317A CN 202310765466 A CN202310765466 A CN 202310765466A CN 117080317 A CN117080317 A CN 117080317A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133612—Electrical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The application discloses a preparation method of a lamp strip and a display device, wherein the preparation method comprises the following steps: providing a lamp strip glass substrate; the lamp strip glass substrate comprises a lamp strip glass substrate and a lamp strip conductive circuit layer; the light bar conductive circuit layer comprises a binding part; binding the light emitting unit to the binding part; and forming a reflecting layer on the light bar glass substrate except the binding part. According to the application, the reflective layer is arranged on the area except the binding part of the light bar glass substrate, so that the light loss of the light emitting unit is reduced, and the conduction yield and the light emitting efficiency of the light emitting unit are improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a preparation method of a lamp strip and a display device.
Background
Along with the continuous expansion of the LCD panel industry, industry competition is larger and larger, and how to grasp the cost advantage becomes an important factor of standing market status; therefore, increasing the utilization rate of glass becomes a key point for reducing the cost. In the related art, many glass substrates have glass remaining after the clapping plate is cut, considerable waste is generated, production cost is increased, and manufacturing efficiency is reduced. In addition, the existing lamp strip prepared by the glass residues is low in conduction yield, so that the luminous efficiency is greatly affected.
Disclosure of Invention
In view of the above, the present application provides a method for manufacturing a light bar and a display device, so as to solve the problem in the prior art that the light efficiency is affected due to low glass utilization rate and low conduction yield of the light bar manufactured by glass.
In order to solve the technical problems, the first technical scheme provided by the application is as follows: the preparation method of the lamp strip comprises the following steps: providing a lamp strip glass substrate; the lamp strip glass substrate comprises a lamp strip glass substrate and a lamp strip conductive circuit layer; the lamp strip conductive circuit layer comprises a binding part; binding the light-emitting unit to the binding part; and forming a reflecting layer on the light bar glass substrate except the binding part.
Optionally, before the binding portion binds the light emitting unit, the binding portion includes: roughening the binding part; and forming a solder paste layer on the binding part subjected to the roughening treatment.
Optionally, the roughening treatment for the binding portion includes: and roughening the binding part through a pickling and etching process.
Optionally, before the binding portion binds the light emitting unit, the binding portion includes: coating an anisotropic conductive adhesive layer on the surface of the binding part, which is away from the light bar glass substrate, wherein the anisotropic conductive adhesive layer comprises a plurality of anisotropic conductive sub-adhesive layers, and each anisotropic conductive sub-adhesive layer corresponds to one binding electrode of the binding part; or an anisotropic conductive adhesive is attached to the surface of the binding portion, which is away from the light bar glass substrate, wherein the anisotropic conductive adhesive layer comprises a plurality of anisotropic conductive adhesive layers, each anisotropic conductive adhesive layer corresponds to one binding electrode of the binding portion, or the anisotropic conductive adhesive layer covers a plurality of binding portions.
Optionally, the step of forming a reflective layer on the light bar glass substrate except for the binding portion is performed before the step of binding the light emitting unit to the binding portion; or the step of forming a reflective layer on the light bar glass substrate in a region other than the binding portion is performed after the binding of the light emitting unit to the binding portion.
Optionally, the providing a light bar glass substrate includes: dividing the glass substrate to obtain adjacent panel cutting areas and lamp strip cutting areas; the panel cutting area comprises a plurality of panel areas, and the light bar cutting area comprises a plurality of light bar areas; forming a conductive circuit layer on the glass substrate; the conductive circuit layer comprises a panel conductive circuit layer positioned in the panel area and a lamp strip conductive circuit layer positioned in the lamp strip area; and cutting the light bar cutting area to obtain a plurality of light bar glass substrates.
Optionally, the forming a conductive circuit layer on the glass substrate includes: preparing a thin film transistor on the glass substrate; preparing an insulating layer on one side of the thin film transistor far away from the glass substrate; wherein the insulating layer covers the thin film transistor; preparing a transparent conductive layer on one side of the insulating layer far away from the thin film transistor; patterning the transparent conductive layer to obtain the binding part positioned in the light bar cutting area and the pixel electrode positioned in the panel cutting area.
Optionally, the forming a conductive circuit layer on the glass substrate includes: forming a first metal layer on the glass substrate; patterning the first metal layer to form a shielding layer positioned in the light bar cutting area, and a first grid electrode and a first grid wire positioned in the panel cutting area; a first insulating layer is arranged on one side, far away from the glass substrate, of the first metal layer; wherein the first insulating layer covers the shielding layer, the first gate electrode and the first gate wiring; forming a semiconductor layer on one side of the first insulating layer away from the first metal layer; patterning the semiconductor layer to form an active layer positioned in the light bar cutting area and the panel cutting area; forming a second metal layer on one side of the first insulating layer away from the first metal layer; patterning the second metal layer to form a data line, a source electrode and a drain electrode which are positioned in the light bar cutting area and the panel cutting area; a second insulating layer is arranged on one side of the data line, the source electrode and the drain electrode, which is far away from the first insulating layer; forming a transparent conductive layer on one side of the second insulating layer away from the data line; patterning the transparent conductive layer to form a second gate electrode and a second gate wire in the light bar cutting region and a pixel electrode in the panel cutting region; cutting the glass substrate to obtain a prefabricated substrate comprising the second gate electrode and the second gate wire; forming a flat layer on one side of the second gate electrode and the second gate wire of the prefabricated substrate, which is far away from the second insulating layer; forming a third metal layer on one side of the flat layer away from the second gate electrode and the second gate wire; patterning the third metal layer to form the binding portion for binding the light emitting unit.
Optionally, after forming a reflective layer on the light bar glass substrate except for the binding portion, the method includes: forming a heat dissipation layer on the surface of the light bar glass substrate, which is away from the reflecting layer; wherein the thickness of the heat dissipation layer is 200-300 mu m.
In order to solve the technical problems, a second technical scheme provided by the application is as follows: the display device comprises a display panel and a backlight module, wherein the backlight module is electrically connected with the display panel and is used for providing a light source for the display panel; the backlight module comprises a plurality of light bars, and the light bars are prepared by the preparation method of any one of the above.
The application has the beneficial effects that: unlike the prior art, the preparation method of the lamp strip comprises the following steps: providing a lamp strip glass substrate; the lamp strip glass substrate comprises a lamp strip glass substrate and a lamp strip conductive circuit layer; the light bar conductive circuit layer comprises a binding part; binding the light emitting unit to the binding part; and forming a reflecting layer on the light bar glass substrate except the binding part. According to the application, the reflective layer is arranged on the area except the binding part of the light bar glass substrate, so that the light loss of the light emitting unit is reduced, and the conduction yield and the light emitting efficiency of the light emitting unit are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic block diagram of a method for manufacturing a light bar according to an embodiment of the present application;
fig. 2 is a schematic process flow diagram of a method for manufacturing a light bar according to an embodiment of the application;
FIG. 3 is a schematic block diagram of a process for providing a glass substrate for a light bar according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a process for providing a glass substrate for a light bar according to an embodiment of the present application;
fig. 5 is a schematic block diagram of a first embodiment of forming a conductive trace layer on a glass substrate according to a first embodiment of the present application;
fig. 6 is a schematic process flow diagram of a first embodiment of forming a conductive trace layer on a glass substrate according to a first embodiment of the present application;
fig. 7 is a schematic block diagram of a flow chart of a second embodiment of forming a conductive trace layer on a glass substrate according to a first embodiment of the present application;
Fig. 8 is a schematic process flow diagram of a second embodiment of forming a conductive trace layer on a glass substrate according to a first embodiment of the present application;
FIG. 9 is a schematic block diagram of a step of binding a light emitting unit before a binding portion according to an embodiment of the present application;
FIG. 10 is a schematic process flow diagram of a step of binding a light emitting unit before a binding portion according to an embodiment of the present application;
FIG. 11 is a schematic block diagram of a process for binding a light emitting unit to a binding portion according to another embodiment of the present application;
FIG. 12 is a schematic process flow diagram of step S2a provided in FIG. 11;
FIG. 13 is a schematic process flow diagram of step S2b provided in FIG. 11;
FIG. 14 is a schematic diagram of a process flow for forming a reflective layer on a glass substrate except for a binding portion of a light bar according to an embodiment of the present application;
FIG. 15 is a schematic block diagram of a method for manufacturing a light bar according to a second embodiment of the present application;
fig. 16 is a schematic process flow diagram of step S3 and step S4 in the process flow of the method for manufacturing a light bar according to the second embodiment of the present application;
FIG. 17 is a schematic view of a light bar according to the present application;
fig. 18 is a schematic diagram of a display device according to the present application.
Reference numerals illustrate:
10-light bar cutting area, 101-light bar area, 102-light bar area outline, 1-light bar glass substrate, 11-light bar glass substrate, 12-light bar conductive circuit layer, 121-binding portion, 122-connecting portion, 13-solder paste layer, 14-anisotropic conductive adhesive layer, 141-anisotropic conductive sub-adhesive layer, 15-anisotropic conductive adhesive, 151-anisotropic conductive adhesive, 16-third mask, 161-covering portion, 162-hollowed-out portion, 20-panel cutting area, 201-panel area, 202-panel area outline, 22-panel conductive circuit layer, 30-boundary line, 40-conductive circuit layer, 43-thin film transistor, 44-insulating layer, 45-first transparent conductive layer, 451-first pixel electrode, 50-light emitting unit, 60-first metal layer, 601-shielding layer, 602-first gate electrode, 61-first insulating layer, 62-semiconductor layer, 621-first active layer, 122-second active layer, 63-second metal layer, 631-first data line, 632-first source electrode, 633-second drain electrode, 634-second data line, 635-second source electrode, 636-second drain electrode, 64-second insulating layer, 65-second transparent conductive layer, 651-second gate electrode, 652-second pixel electrode, 66-prefabricated substrate, 67-flat layer, 68-third metal layer, 70-heat dissipation layer, 80-reflective layer, 90-connector, 100-glass substrate, 200-light bar, 300-display device, 301-backlight module, 302-display panel.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The terms "first," "second," and "first," herein, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "first", "second", or "first" may include at least one such feature, either explicitly or implicitly. All directional indications (such as up, down, left, right, front, back … …) in embodiments of the present application are merely used to explain the relative positional relationship, movement, etc. between the components in a particular gesture (as shown in the drawings), and if the particular gesture changes, the directional indication changes accordingly. Furthermore, the terms "comprising," "including," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
The inventors found that: along with the continuous expansion of the LCD panel industry, industry competition is larger and larger, and how to grasp the cost advantage becomes an important factor of standing market status; therefore, increasing the utilization rate of glass becomes a key point for reducing the cost. In the related art, many glass substrates have glass remaining after the clapping plate is cut, considerable waste is generated, production cost is increased, and manufacturing efficiency is reduced. In addition, in the prior art, the utilization rate of the glass panel is improved by utilizing the residual material glass-based light bar, but the binding conduction yield of the LEDs is low due to the influence of a glass body, and the heat dissipation effect is poor, so that the luminous efficiency is greatly influenced; therefore, the application improves the yield by changing the manufacturing process of the glass lamp strip.
In order to solve the above problems, the present application provides a method for manufacturing a light bar and a display device.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic flow diagram of a method for manufacturing a light bar according to an embodiment of the present application, and fig. 2 is a schematic flow diagram of a process for manufacturing a light bar according to an embodiment of the present application.
The preparation method of the lamp strip provided by the application comprises the following steps:
s1: providing a lamp strip glass substrate; the lamp strip glass substrate comprises a lamp strip glass substrate and a lamp strip conductive circuit layer; the light bar conductive circuit layer comprises a binding part.
Specifically, the light bar glass substrate 1 is obtained as a glass residue for preparing a light bar, which is glass remaining after cutting the substrate of the display panel 302. The light bar glass substrate 1 includes a light bar glass substrate 11 and a light bar conductive circuit layer 12, wherein the light bar glass substrate 11 is a glass substrate formed after cutting the light bar region 101, and the light bar conductive circuit layer 12 is prepared in step S2 described below. The light bar conductive circuit layer 12 is disposed on one surface of the light bar glass substrate 11. By preparing the light bar conductive line layer 12 on the glass residue, the light bar conductive line layer 12 may specifically include a connection portion 122 and a plurality of binding portions 121 disposed at intervals, and the binding portions 121 are used to bind the light emitting units 50. The connection portion 122 may be provided at one end of the light bar glass substrate 1 for connecting the connector 90. The Connector (CNT) 90 may be connected to the connection part 122 by a Surface Mount Technology (SMT), or the connection part 122 may be connected to an external power source by binding a circuit board (not shown), which may be an FPC, an FFC, or the like, to the connection part 122. It will be appreciated that the external connection member may also be connected to the connection portion 122 by providing a trace, which the present application is not limited to.
Referring to fig. 3 and fig. 4, fig. 3 is a schematic block diagram of a process for providing a glass substrate for a light bar according to an embodiment of the application, and fig. 4 is a schematic process for providing a glass substrate for a light bar according to an embodiment of the application.
In this embodiment, the step S1 of providing the light bar glass substrate 1 may include:
s11: dividing the glass substrate to obtain adjacent panel cutting areas and light bar cutting areas.
Specifically, the glass substrate 100 is mainly a glass for performing panel cutting of the display panel 302, such as a substrate of a cut TFT (thin film transistor) or CF (color film substrate). In the present embodiment, the glass material is mainly cut, and it is understood that in practice, other materials may be cut, for example, ceramics, etc. The glass substrate 100 is divided such that the glass substrate 100 forms two cut areas of the panel cut area 20 and the light bar cut area 10, each of which in turn forms the panel area 201 and the light bar area 101, respectively. The panel cutting area 20 includes a plurality of panel areas 201, and the light bar cutting area 10 includes a plurality of light bar areas 101. Each panel region 201 may be a substrate of the display panel 302 and each light bar region 101 may be a substrate of the light bar 200. In this embodiment, the remaining residual material after cutting the display panel 302 is utilized to cut the light bar substrate, so that the loss and waste of glass are reduced, the utilization rate of glass is improved, and the production cost is reduced.
In the present embodiment, as shown in fig. 4, a plurality of light bar sections 101 are arranged at intervals along the direction of the boundary line 30 of the panel cut section 20 and the light bar cut section 10, and the length direction of the light bar sections 101 is perpendicular to the boundary line 30. Specifically, after the glass substrate 100 is divided into the panel cut region 20 and the light bar cut region 10, a boundary line 30 between the panel cut region 20 and the light bar cut region 10 is formed therebetween. The present application defines the direction of the boundary line 30 as a first direction in which the light bar regions 101 are arranged at intervals along the direction of the boundary line 30, i.e., the light bar regions 101 include a plurality of light bar glass substrates 1 arranged at intervals along the first direction. The length direction of the light bar area 101 may be defined as a second direction, which is perpendicular to the first direction, i.e. the length direction of the light bar area 101 is perpendicular to the boundary line 30. It will be appreciated that, when actually cutting the light bar cutting area 10, the length of the light bar area 101 may also be parallel to the first direction, and the specific cutting direction may be set according to the size of the light bar cutting area 10.
Meanwhile, along the second direction, the pitches between the outer contour lines 202 of the plurality of panel regions and the edge of the glass substrate 100, the pitches between the adjacent panel regions 201, and the pitches between the outer contour lines 102 of the plurality of light bar regions and the boundary line 30 and the edge of the glass substrate 100 are all equal. Specifically, the interval D1 between the outer contour line 102 of the light bar region and the edge of the glass substrate 100, the interval D2 between the outer contour line 102 of the light bar region and the boundary line 30, the interval D3 between the outer contour line 202 of the panel region and the boundary line 30, the interval D4 between the adjacent panel regions 201, and the interval D5 between the outer contour line 202 of the panel region and the edge of the glass substrate 100 in fig. 4 are all equal. By the arrangement, in the process of cutting the panel area 201 and the light bar area 101, the application does not need to readjust the processing parameters of the equipment because of different cutting intervals or because of the problem of directivity, thereby improving the cutting efficiency.
S12: a conductive circuit layer is formed on a glass substrate.
Specifically, as shown in fig. 4, the conductive trace layer 40 is uniformly formed on the glass substrate 100, that is, all regions on one side of the glass substrate 100 are uniformly formed with the conductive trace layer 40. The conductive trace layer 40 may include a panel conductive trace layer 22 located in the panel region 201 and a light bar conductive trace layer 12 located in the light bar region 101. That is, the steps of forming the panel conductive trace layer 22 and the light bar conductive trace layer 12 on the glass substrate 100 are implemented by the same semiconductor process. For example, in the process of manufacturing the panel conductive line layer 22 of the panel region 201, it is necessary to perform processes such as etching, exposure, and/or development on the panel region 201. Then the same process is performed simultaneously for the light bar conductive trace layer 12 of the light bar region 101 during the process of manufacturing the panel conductive trace layer 22, so that the panel conductive trace layer 22 of the panel region 201 and the light bar conductive trace layer 12 of the light bar region 101 are manufactured in the same process. The application prepares the light bar conductive circuit layer 12 in the light bar area 101 by utilizing the process of preparing the panel conductive circuit layer 22 in the panel area 201, thereby saving the preparation time and improving the production efficiency.
S13: cutting the light bar cutting area to obtain a plurality of light bar glass substrates.
Specifically, as shown in fig. 4, after the conductive circuit layer 40 is fabricated on the glass substrate 100, the panel cutting area 20 and the light bar cutting area 10 may be cut separately. After cutting the light bar cutting area 10, a plurality of light bar glass substrates 1 can be obtained, and it can be understood that the light bar glass substrates 1 have a bar-shaped structure.
Referring to fig. 5 and 6, fig. 5 is a schematic block diagram illustrating a process of forming a conductive trace layer on a glass substrate according to a first embodiment of the present application, and fig. 6 is a schematic process of forming a conductive trace layer on a glass substrate according to a first embodiment of the present application.
First embodiment of step S12:
a step S12 of forming a conductive line layer on a glass substrate includes:
s121: a thin film transistor is prepared on a glass substrate.
Specifically, in the present embodiment, the thin film transistor 43 is first formed on the glass substrate 100 by a semiconductor process including, but not limited to, etching, exposure to light, development, and the like. The thin film transistor 43 covers the panel region 201 and the light bar region 101 at the same time, that is, the thin film transistor 43 of the light bar region 101 is prepared at the same time by using the process of preparing the thin film transistor 43 by using the panel region 201, so that the working procedure is saved, and the preparation efficiency is improved.
S122: preparing an insulating layer on one side of the thin film transistor far away from the glass substrate; wherein the insulating layer covers the thin film transistor.
Specifically, after the thin film transistor 43 is completed, an insulating layer 44 is prepared on the side of the thin film transistor 43 away from the glass substrate 100 to form insulation for the thin film transistor 43.
S11: and preparing a transparent conductive layer on one side of the insulating layer far away from the thin film transistor.
Specifically, the first transparent conductive layer 45 is prepared in the panel area 201 and the light bar area 101 synchronously, and the first transparent conductive layer 45 may be an indium tin oxide transparent conductive layer, for example, a layer of the first transparent conductive layer 45 is prepared by using a direct current magnetron sputtering mode of a physical vapor deposition (Physical Vapor Deposition, abbreviated as PVD) device, and the first transparent conductive layer 45 has good conductivity, can be bound to the light emitting unit 50, and also can be used for forming the first pixel electrode 451.
S124: the transparent conductive layer is patterned to obtain binding portions located in the light bar cutting regions and pixel electrodes located in the panel cutting regions.
Specifically, the transparent conductive layer is patterned, the first transparent conductive layer 45 of the panel region 201 may serve as the first pixel electrode 451, the first transparent conductive layer 45 of the light bar region 101 may be used to form the bonding portion 121, and the bonding portion 121 may be used to bond the light emitting unit 50. That is, the first transparent conductive layer 45 is prepared once, and the first pixel electrode 451 and the bonding portion 121 may be simultaneously obtained by patterning the first transparent conductive layer 45. It can be understood that, in this embodiment, after the following step S3 is performed to cut the light bar cutting area 10 to obtain a plurality of light bar glass substrates 1, each light bar glass substrate 1 has a binding portion 121 capable of binding the light emitting unit 50, and the binding portion 121 does not need to be separately prepared for the light bar area 101, so that the product preparation efficiency is greatly improved.
Referring to fig. 7 and 8, fig. 7 is a schematic block diagram illustrating a process of forming a conductive trace layer on a glass substrate according to a second embodiment of the present application, and fig. 8 is a schematic process of forming a conductive trace layer on a glass substrate according to a second embodiment of the present application.
Second embodiment of step S12:
the step S12 of forming the conductive line layer on the glass substrate may include:
S12A: a first metal layer is formed on a glass substrate.
Specifically, the glass substrate 100 is a monolithic glass before cutting, and the first metal layer 60 may be formed on the glass substrate 100 by deposition.
S12B: the first metal layer is patterned to form a shielding layer positioned in the light bar cutting area, and a first grid electrode and a first grid wire positioned in the panel cutting area.
Specifically, the first metal layer 60 is patterned to form a shielding layer 601 of the light bar cutting region 10 and a first gate electrode 602 and a first gate trace (not shown) of the panel cutting region 20. The shielding layer 601 completely shields the entire light bar area 101, so that light from a back plate (not shown) in the backlight module 301 can be isolated, and the light emitting effect of the light bar area 101 is prevented from being influenced. In addition, the first gate electrode 602 and the first gate trace may be used to turn on or off the source and drain of the panel region 201.
S12C: a first insulating layer is arranged on one side of the first metal layer away from the glass substrate.
Specifically, the first insulating layer 61 is disposed to cover the shielding layer 601, the first gate electrode 602, and the first gate wire, so as to insulate the shielding layer 601, the first gate electrode 602, and the first gate wire from short circuits. The first insulating layer 61 may be oxide or nitride, such as silicon oxide or aluminum oxide, or polymer, such as PI.
S12D: a semiconductor layer is formed on a side of the first insulating layer away from the first metal layer.
Specifically, the semiconductor layer 62 may be formed by a semiconductor process such as etching, exposure, development, or the like.
S12E: the semiconductor layer is patterned to form an active layer located in the light bar cutting area and the panel cutting area.
Specifically, the semiconductor layer 62 of the light bar cutting region 10 and the panel cutting region 20 are simultaneously patterned, that is, the first active layer 621 of the light bar cutting region 10 and the second active layer 622 of the panel cutting region 20 are simultaneously formed through the same process, thereby saving processes and time and improving the manufacturing efficiency.
S12F: a second metal layer is formed on a side of the first insulating layer away from the first metal layer.
Specifically, the second metal layer 63 may be formed on a side of the first insulating layer 61 remote from the first metal layer 60 through a deposition process.
S12G: and patterning the second metal layer to form a data line, a source electrode and a drain electrode which are positioned in the light bar cutting area and the panel cutting area.
Specifically, the second metal layer 63 is patterned, so that the light bar cut region 10 and the panel cut region 20 form a data line, a source electrode, and a drain electrode, respectively. That is, the first data line 631, the first source electrode 632 and the first drain electrode 633 and the second data line 634, the second source electrode 635 and the second drain electrode 636 of the panel cut region 20 are formed simultaneously by the same process, thereby saving processes and time and improving the manufacturing efficiency.
S12H: a second insulating layer is disposed on a side of the data line, the source electrode, and the drain electrode away from the first insulating layer.
Specifically, by providing the second insulating layer 64 at the side of the first data line 631, the first source electrode 632, and the first drain electrode 633, and the second data line 634, the second source electrode 635, and the second drain electrode 636 away from the first insulating layer 61, insulating isolation is formed for the data line, the source electrode, and the drain electrode, and other metal layers, preventing a short circuit.
S12I: a transparent conductive layer is formed on a side of the second insulating layer away from the data line.
Specifically, as in the first embodiment, the second transparent conductive layer 65 is prepared synchronously in the panel area 201 and the light bar area 101, and the second transparent conductive layer 65 may be an Indium Tin Oxide (ITO) transparent conductive layer, for example, a layer of the second transparent conductive layer 65 is prepared by using a direct current magnetron sputtering method of a physical vapor deposition (Physical Vapor Deposition, abbreviated as PVD) device.
S12J: the transparent conductive layer is patterned to form a second grid electrode and a second grid wire which are positioned in the light bar cutting area and a pixel electrode which is positioned in the panel cutting area.
Specifically, the second transparent conductive layer 65 is patterned, and the second gate electrode 651 and the second gate trace (not shown) of the light bar cut region 10 and the second pixel electrode 652 of the panel cut region 20 are formed in the same process. Since the second transparent conductive layer 65 has good conductivity, the light emitting cells 5050 may be bound and also used to form the second pixel electrode 652 of the panel region 201.
S12K: the glass substrate is cut to obtain a pre-fabricated substrate comprising the second gate electrode and the second gate trace.
Specifically, after the glass substrate 100 is provided with the second transparent conductive layer 65, the process of synchronizing the light bar cutting area 10 and the panel cutting area 20 may be completed, so that the glass substrate 100 is cut. After cutting the glass substrate 100 a pre-formed substrate 66 comprising a second gate electrode 651 and a second gate track may be obtained, which pre-formed substrate 66 may be used for preparing a glass-based light bar 200 according to the application.
S12L: a flat layer is formed on one side of the second gate electrode and the second gate wire of the prefabricated substrate, which is far away from the second insulating layer.
Specifically, the flat layer 67 is prepared on the prefabricated substrate 66 obtained by cutting the glass substrate 100, and the flat layer 67 may be formed on the side of the second gate electrode 651 and the second gate trace away from the second insulating layer 64 by deposition. The second gate electrode 651 and the layer where the second gate trace is located are planarized by the planarization layer 67, so that other functional layers are conveniently disposed on the planarization layer 67. Meanwhile, the planarization layer 67 may insulate the second gate electrode 651 and the second gate wire from a third metal layer 68 described below. The planarization layer 67 may be a polymer, such as PI.
S12M: a third metal layer is formed on a side of the planarization layer away from the second gate electrode and the second gate trace.
Specifically, similar to the preparation process of the first metal layer 60 and the second metal layer 63, the third metal layer 68 may be formed by a deposition process. The materials of the third metal layer 68 and the first metal layer 60 and the second metal layer 63 may be the same or different, which is not limited in the present application.
S12N: and patterning the third metal layer to form a binding part for binding the light emitting unit.
Specifically, by patterning the third metal layer 68, a binding portion 121 that binds the light emitting unit 50 is formed, and the binding portion 121 includes a cathode electrode (not shown) and an anode electrode (not shown) that are provided in an insulating manner. Unlike in the first embodiment, the binding portion 121 in this embodiment is a metal electrode. And the third metal layer 68 in this embodiment is formed by a metal layer separately prepared on the pre-fabricated substrate 66 after cutting the glass substrate 100, and is not the same process as the process of the panel cutting area 20.
In addition, in the present embodiment, the reflective layer 80 may be provided at the cathode electrode and the anode electrode side of the binding part 121, and the reflective layer 80 may reflect light of the light emitting unit 50, thereby improving light emitting efficiency. The reflective layer 80 is provided at the same time, so that light of the light emitting unit 50 is prevented from being reflected to one side of the first metal layer 60, and damage to the second gate electrode 651 due to irradiation thereto is prevented.
S2: the light emitting unit is bound to the binding portion.
Specifically, pins of the plurality of light emitting units 50 are respectively connected to the cathode electrode and the anode electrode of the binding portion 121, thereby binding the plurality of light emitting units 50 to the binding portion 121. The light emitting unit 5050 may be an LED, a mini LED, or the like, and the LED may be a white light LED or a blue light LED, which is not limited in the present application.
Referring to fig. 9 and 10, fig. 9 is a schematic block diagram of a process for binding a light emitting unit before a binding portion according to an embodiment of the present application, and fig. 10 is a schematic process for binding a light emitting unit before a binding portion according to an embodiment of the present application.
In the present embodiment, before the step S2 of binding the light emitting unit 50 to the binding part 121, it may include:
s21: and roughening the binding part.
Specifically, the binding portion 121 is roughened, and the cathode electrode and the anode electrode formed of the metal where the binding portion 121 is located or the second transparent conductive layer 65 are roughened. In this embodiment, the roughening treatment is further performed on the glass forming insulation between the cathode electrode and the anode electrode of the binding portion 121 and the glass forming the bare drain around the cathode electrode and the anode electrode, so that the binding between the binding portion 121 and the light emitting unit 50 is more stable, and the binding effect and the light emitting yield of the light emitting unit 50 are improved.
In both the first embodiment and the second embodiment, the binding portion 121 may be roughened by a pickling etching process, specifically, the binding portion 121 and its surrounding area may be pickled and etched by using a first mask, for example, the area except the binding portion 121 on the light bar glass substrate 100 is covered by a covering portion of a steel mesh, the binding portion 121 is pickled and etched by a hollow area of the steel mesh, and the pickling etching depth is 50-100 μm, so that the binding effect between the binding portion 121 and the light emitting unit 50 is improved by this step.
In addition, in the first embodiment, the bonding portion 121 formed by the second transparent conductive layer 65 may be roughened by forming particles with different sizes on the surface of the bonding portion 121 by magnetron sputtering, or the bonding portion 121 formed by the second transparent conductive layer 65 may be roughened by physical vapor deposition, so as to improve the bonding effect between the bonding portion 121 and the light emitting unit 50.
In the second embodiment, the oxide formed by the metal layer of the metal binding portion 121 may also be removed by acid etching, so as to further improve the connection effect between the light emitting unit 50 and the binding portion 121.
S22: and forming a solder paste layer on the roughened binding portion.
Specifically, after roughening the binding portion 121 by any of the above methods, the solder paste layer 13 is formed on the binding portion 121 by coating tin, and it is understood that after roughening the binding portion 121 and the surrounding area thereof, the contact area between the binding portion 121 and the solder paste layer 13 can be increased, thereby increasing the yield after binding the light emitting unit 50.
Referring to fig. 11 to 13, fig. 11 is a schematic block diagram illustrating a process of another step of binding a light emitting unit before a binding portion according to an embodiment of the present application, fig. 12 is a schematic process of step S2a of fig. 11, and fig. 13 is a schematic process of step S2b of fig. 11.
The binding of the light emitting unit 50 before the binding part 121 may include the following steps S2a or S2b.
First embodiment of step S2:
s2a: and coating an anisotropic conductive adhesive layer on the surface of the binding part, which is away from the glass substrate of the lamp strip.
Specifically, as shown in fig. 12, the anisotropic conductive adhesive layer 14 includes a plurality of anisotropic conductive adhesive layers 141, and each anisotropic conductive adhesive layer 141 corresponds to one bonding electrode of the bonding portion 121. The anisotropic conductive adhesive layer 141 may be a strip, and the strip conductive adhesive corresponds to the positive and negative electrodes of the binding portion 121 one by one. For example, each of the anisotropic conductive paste layers 141 corresponds to only one of the anode electrode or the cathode electrode of the binding portion 121. In this embodiment, the anisotropic conductive adhesive layer 141 may be conductive adhesive base material silicone rubber, which is a high-performance high-conductivity nickel/carbon filled small-wire-diameter ultra-soft normal-temperature vulcanized conductive adhesive, and after dispensing, is cured at normal temperature for 24H, so that the LED light emitting unit 50 and the circuit on the light bar glass substrate 100 can be effectively fixed to complete conduction, and the conduction rate is improved. The application of the anisotropic conductive adhesive layer 14 may be specifically: firstly, cleaning the surface of a light bar glass substrate 100; then, the light-emitting unit 50 and the corresponding wiring of the lamp strip glass substrate 100 are fixed by using the second mask plate through the uniformly stirred conductive adhesive; and curing for a certain time at normal temperature. For example, the gaps between the adjacent binding portions 121 are shielded by the shielding portions of the steel mesh, the anisotropic conductive adhesive layers 141 are covered on the cathode electrode and the anode electrode of the binding portions 121 one by the hollowed portions of the steel mesh, the pins of the LED light emitting unit 50 and the corresponding wires of the light bar glass substrate 100 are fixed and conducted, and then cured at normal temperature for 24H.
Second embodiment of step S22:
s2b: and attaching anisotropic conductive adhesive on the surface of the binding part, which is away from the glass substrate of the lamp strip.
Specifically, as shown in fig. 13, the anisotropic conductive adhesive 15 is an ACF adhesive, which can not only integrate two bonding members, but also complete the conduction of the two bonding members in the z-axis direction. In this embodiment, firstly, ACF glue is attached to the corresponding binding portion 121 of the LED lighting unit 50, and the pins of the LED lighting unit 50 and the corresponding circuits on the light bar glass substrate 100 are hot pressed by an ACF glue hot pressing device to ensure bonding conduction; after the hot pressing, the fixing and the conduction of the pins of the LED light-emitting unit 50 and the circuit of the lamp strip glass substrate 100 are ensured, so that the conduction rate is improved, and the light-emitting efficiency of the light-emitting unit 50 is improved.
In this embodiment, a whole layer of anisotropic conductive adhesive 15 is coated to cover all the binding portions 121, so that the preparation method is convenient, the preparation efficiency can be improved, and the working hours can be saved. Alternatively, the anisotropic conductive paste 15 may include a plurality of anisotropic conductive sub-pastes (not shown), each of which corresponds to one of the bonding electrodes of the bonding portion 121. That is, the anisotropic conductive adhesive layers 15 are disposed in one-to-one correspondence with the cathode electrode or the anode electrode of the binding portion 121, so that the anisotropic conductive adhesive layers can be completely corresponding to the positions of the binding portion 121, and the problems of tackiness and easy dust absorption of the adhesive layers of bare leakage between adjacent binding portions 121 are prevented. It will be appreciated that when the anisotropic conductive film 15 includes a plurality of anisotropic conductive adhesive layers, the structure and arrangement may be the same as the non-anisotropic conductive adhesive layer 14. The two preparation modes of the anisotropic conductive adhesive 15 provided by the application can be selected according to the needs, and the application is not limited to the above.
Referring to fig. 14, fig. 14 is a schematic process flow diagram of forming a reflective layer on a light bar glass substrate except for a binding portion according to an embodiment of the application.
S3: and forming a reflecting layer on the light bar glass substrate except the binding part.
Specifically, the third mask 16 is disposed on a side of the light emitting unit 50 away from the conductive adhesive layer; the third mask 16 has a cover portion 161 and a hollow portion 162 that are disposed at intervals. The binding portions 121 are shielded by the cover portion 161, and the reflective layer 80 is formed by the hollowed portions 162 at the gaps between the binding portions 121, that is, the reflective layer 80 is formed at the unbound portions. The step of forming the reflective layer 80 on the light bar glass substrate 100 except for the binding portion 121 may be performed before the binding of the light emitting unit 50 to the binding portion 121, so that the LED light emitting unit 50 may be prevented from being contaminated in the process of preparing the reflective layer 80, affecting the light emitting effect. Alternatively, the step of forming the reflective layer 80 on the light bar glass substrate 100 in the region other than the binding portion 121 is performed after the binding of the light emitting unit 50 to the binding portion 121, that is, after the preparation of the conductive adhesive layer, the light emitting unit 50 is timely bound to the conductive adhesive layer, thereby securing the binding effect of the light emitting unit 50.
In addition, the reflective layer 80 is formed on the light bar glass substrate 100 except for the binding portion 121, so that the light reflected by the LED light emitting unit 50 may be reflected by the reflective layer 80, so that the LED light emitting unit 50 may not irradiate the first metal layer 60, and the light of the light emitting unit 50 may be prevented from being reflected to one side of the first metal layer 60, thereby preventing damage to the second gate electrode 651 caused by irradiation thereto.
In the present embodiment, the thickness of the reflective layer 80 is 100-200 μm, so that the windowing position of the lamp bead of the LED light emitting unit 50 and the surrounding area affecting uniformity can be ensured not to be polluted, and meanwhile, the light emitting efficiency of the glass-based light bar 200 can be ensured, and light loss can be avoided. The reflective layer 80 includes diffusion particles including SiO 2 、TiO 2 、Au、Ag、Al、Cu、Zn、Pt、Co、Ni、Cu 2 O, cuO, cdO, znO, one or more of the glass fibers.
Referring to fig. 15 and 16, fig. 15 is a schematic block flow diagram of a method for manufacturing a light bar according to the second embodiment of the present application, and fig. 16 is a schematic flow diagram of step S3 and step S4 in the process flow of the method for manufacturing a light bar according to the second embodiment of the present application.
In the present embodiment, after step S3 of forming the reflective layer 80 on the light bar glass substrate 100 except for the binding portion 121, it may include:
S4: and forming a heat dissipation layer on the surface of the light bar glass substrate, which is away from the reflecting layer.
Specifically, the heat dissipation layer 70 may be formed on the back surface of the light bar glass substrate 100 through a coating process, and the thickness of the heat dissipation layer 70 is 200-300 μm, and the heat dissipation coating may be formed through magnetron sputtering or physical vapor deposition. The heat dissipation coating can be made of graphene material, and the high heat transfer property of the graphene material is utilized to dissipate heat of the lamp strip, so that the luminous efficiency is ensured; and at the same time, the service life of the LED light-emitting unit 50 can be prolonged, and the display quality can be improved.
Referring to fig. 17, fig. 17 is a schematic structural diagram of a light bar according to the present application.
The light bar 200 may include a light bar glass substrate 1, a light emitting unit 50, a reflective layer 80, and a heat dissipation layer 70. Wherein the lamp strip glass substrate 1 comprises a lamp strip glass substrate 11 and a lamp strip conductive circuit layer 12; the light bar conductive line layer 12 includes a binding portion 121; the light emitting unit 50 is bound to the binding part 121; the reflection layer 80 is formed on the light bar glass substrate 1 except for the binding portion 121; wherein the reflective layer 80 comprises SiO 2 、TiO 2 、Au、Ag、Al、Cu、Zn、Pt、Co、Ni、Cu 2 O, cuO, cdO, znO, one or more of the glass fibers. In this embodiment, the thickness of the reflective layer 80 is 100-200 μm, so that the windowing position of the lamp bead of the LED light emitting unit 50 and the surrounding area affecting uniformity can be ensured not to be polluted, and meanwhile, the light emitting efficiency of the glass-based light bar can be ensured, and the light loss can be avoided.
The heat dissipation layer 70 is formed on the surface of the light bar glass substrate 1 facing away from the reflecting layer 80; wherein the thickness of the heat dissipation layer 70 is 200-300 μm. The heat dissipation layer 70 can be a heat dissipation coating and can be made of graphene material, and the high heat transfer property of the graphene material is utilized to dissipate heat of the lamp strip, so that the luminous efficiency is ensured; and at the same time, the service life of the LED light-emitting unit 50 can be prolonged, and the display quality can be improved.
The specific structure and the preparation method of the light bar conductive circuit layer 12, the reflective layer 80 and the heat dissipation layer 70 in the light bar 200 are referred to in the foregoing description, and are not repeated herein.
Referring to fig. 18, fig. 18 is a schematic diagram of a display device according to the present application.
The application also provides a display device 300, which comprises a display panel 302 and a backlight module 301, wherein the backlight module 301 is electrically connected with the display panel 302 and is used for providing a light source for the display panel 302; the display panel 302 may be a display panel using either minileds or Micro LEDs. The backlight module 301 may include a plurality of light bars 200, and the light bars 200 are manufactured by any of the above manufacturing methods. Reference is made to the foregoing for the structure and preparation method of the light bar 200, and details are not repeated here.
The preparation method of the lamp strip disclosed by the application comprises the following steps: providing a lamp strip glass substrate; the lamp strip glass substrate comprises a lamp strip glass substrate and a lamp strip conductive circuit layer; the light bar conductive circuit layer comprises a binding part; binding the light emitting unit to the binding part; and forming a reflecting layer on the light bar glass substrate except the binding part. According to the application, the reflective layer is arranged on the area except the binding part of the light bar glass substrate, so that the light loss of the light emitting unit is reduced, and the conduction yield and the light emitting efficiency of the light emitting unit are improved.
The foregoing description is only of embodiments of the present application, and is not intended to limit the scope of the application, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present application or directly or indirectly applied to other related technical fields are included in the scope of the present application.
Claims (10)
1. A method of making a light bar comprising:
providing a lamp strip glass substrate; the lamp strip glass substrate comprises a lamp strip glass substrate and a lamp strip conductive circuit layer; the lamp strip conductive circuit layer comprises a binding part;
binding the light-emitting unit to the binding part;
and forming a reflecting layer on the light bar glass substrate except the binding part.
2. The method of claim 1, wherein the step of determining the position of the substrate comprises,
the binding the light emitting unit before the binding part includes:
roughening the binding part;
and forming a solder paste layer on the binding part subjected to the roughening treatment.
3. The method of claim 2, wherein the step of determining the position of the substrate comprises,
the roughening treatment of the binding portion includes:
and roughening the binding part through a pickling and etching process.
4. The method of claim 1, wherein the binding the light emitting unit before the binding portion comprises:
coating an anisotropic conductive adhesive layer on the surface of the binding part, which is away from the light bar glass substrate, wherein the anisotropic conductive adhesive layer comprises a plurality of anisotropic conductive sub-adhesive layers, and each anisotropic conductive sub-adhesive layer corresponds to one binding electrode of the binding part; or (b)
And attaching an anisotropic conductive adhesive on the surface of the binding part, which is away from the glass substrate of the light bar, wherein the anisotropic conductive adhesive layer comprises a plurality of anisotropic conductive adhesive layers, and each anisotropic conductive adhesive layer corresponds to one binding electrode of the binding part, or covers a plurality of binding parts.
5. The method of claim 1, wherein the step of determining the position of the substrate comprises,
the step of forming a reflective layer on the light bar glass substrate except the binding part is performed before the binding of the light emitting unit to the binding part; or (b)
The step of forming a reflective layer on the light bar glass substrate in an area other than the binding portion is performed after the binding of the light emitting unit to the binding portion.
6. The method of claim 1, wherein providing a light bar glass substrate comprises:
dividing the glass substrate to obtain adjacent panel cutting areas and lamp strip cutting areas; the panel cutting area comprises a plurality of panel areas, and the light bar cutting area comprises a plurality of light bar areas;
forming a conductive circuit layer on the glass substrate; the conductive circuit layer comprises a panel conductive circuit layer positioned in the panel area and a lamp strip conductive circuit layer positioned in the lamp strip area;
and cutting the light bar cutting area to obtain a plurality of light bar glass substrates.
7. The method of claim 6, wherein forming a conductive trace layer on the glass substrate comprises:
preparing a thin film transistor on the glass substrate;
preparing an insulating layer on one side of the thin film transistor far away from the glass substrate; wherein the insulating layer covers the thin film transistor;
preparing a transparent conductive layer on one side of the insulating layer far away from the thin film transistor;
patterning the transparent conductive layer to obtain the binding part positioned in the light bar cutting area and the pixel electrode positioned in the panel cutting area.
8. The method of claim 6, wherein forming a conductive trace layer on the glass substrate comprises:
forming a first metal layer on the glass substrate;
patterning the first metal layer to form a shielding layer positioned in the light bar cutting area, and a first grid electrode and a first grid wire positioned in the panel cutting area;
a first insulating layer is arranged on one side, far away from the glass substrate, of the first metal layer; wherein the first insulating layer covers the shielding layer, the first gate electrode and the first gate wiring;
forming a semiconductor layer on one side of the first insulating layer away from the first metal layer;
patterning the semiconductor layer to form an active layer positioned in the light bar cutting area and the panel cutting area;
forming a second metal layer on one side of the first insulating layer away from the first metal layer;
patterning the second metal layer to form a data line, a source electrode and a drain electrode which are positioned in the light bar cutting area and the panel cutting area;
a second insulating layer is arranged on one side of the data line, the source electrode and the drain electrode, which is far away from the first insulating layer;
Forming a transparent conductive layer on one side of the second insulating layer away from the data line;
patterning the transparent conductive layer to form a second gate electrode and a second gate wire in the light bar cutting region and a pixel electrode in the panel cutting region;
cutting the glass substrate to obtain a prefabricated substrate comprising the second gate electrode and the second gate wire;
forming a flat layer on one side of the second gate electrode and the second gate wire of the prefabricated substrate, which is far away from the second insulating layer;
forming a third metal layer on one side of the flat layer away from the second gate electrode and the second gate wire;
patterning the third metal layer to form the binding portion for binding the light emitting unit.
9. The method according to claim 1, wherein after forming a reflective layer on the light bar glass substrate in an area other than the binding portion, comprising:
forming a heat dissipation layer on the surface of the light bar glass substrate, which is away from the reflecting layer; wherein the thickness of the heat dissipation layer is 200-300 mu m.
10. A display device, comprising:
a display panel;
the backlight module is electrically connected with the display panel and used for providing a light source for the display panel; wherein the backlight module comprises a plurality of light bars, and the light bars are prepared by the preparation method of any one of claims 1 to 9.
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| CN202310765466.XA CN117080317A (en) | 2023-06-26 | 2023-06-26 | Preparation method of light bar and display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118009261A (en) * | 2024-02-29 | 2024-05-10 | 惠科股份有限公司 | Manufacturing method of light bar and display device |
| CN118412419A (en) * | 2024-07-02 | 2024-07-30 | 惠科股份有限公司 | Preparation method of light-emitting substrate and display device |
| CN118412412A (en) * | 2024-06-27 | 2024-07-30 | 惠科股份有限公司 | Method for manufacturing light-emitting element and display device |
-
2023
- 2023-06-26 CN CN202310765466.XA patent/CN117080317A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118009261A (en) * | 2024-02-29 | 2024-05-10 | 惠科股份有限公司 | Manufacturing method of light bar and display device |
| CN118412412A (en) * | 2024-06-27 | 2024-07-30 | 惠科股份有限公司 | Method for manufacturing light-emitting element and display device |
| CN118412419A (en) * | 2024-07-02 | 2024-07-30 | 惠科股份有限公司 | Preparation method of light-emitting substrate and display device |
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