CN117080175A

CN117080175A - Power packaging module

Info

Publication number: CN117080175A
Application number: CN202210532498.0A
Authority: CN
Inventors: 杨惠强; 冷中明; 谢智正; 王暐纶
Original assignee: Niko Semiconductor Co Ltd
Current assignee: Niko Semiconductor Co Ltd
Priority date: 2022-05-10
Filing date: 2022-05-10
Publication date: 2023-11-17

Abstract

The invention discloses a power packaging module. The power package module includes an electronic component. The electronic component at least comprises a carrier plate and a power element group. The carrier plate comprises an insulating layer, a circuit pattern layer and a conductive heat dissipation layer, wherein the circuit pattern layer and the conductive heat dissipation layer are respectively arranged on two opposite sides of the insulating layer. The power element group is arranged on the circuit pattern layer, and the power element group and the circuit pattern layer form a common circuit together. The total area of the conductive heat dissipation layer is larger than that of the circuit pattern layer, and the thickness of the circuit pattern layer is larger than that of the insulating layer.

Description

Power packaging module

Technical Field

The present disclosure relates to power packaging modules, and particularly to a power packaging module with high voltage resistance.

Background

The power element can be applied to household frequency conversion systems, electric vehicles and industrial control systems (industrial control system) to convert electric energy or control circuits. In conventional circuitry, power devices, gate drive devices, and control devices are typically integrated. Accordingly, in the prior art, after a specific circuit layout is formed on a circuit board in advance according to a circuit design, a plurality of discrete power chips, control chips, gate driving chips and other parts are assembled on a main control circuit board to be packaged together, so as to form a power module.

In some circuits, such as: the voltage conversion circuit, the power module needs to operate under the condition of large voltage or large current. Therefore, in order to allow a large current to pass, a larger lead frame is generally used and is packaged by using a wire bonding packaging technology, so that the existing power module is relatively large in size and difficult to be reduced. In addition, the power module generates more heat energy during operation. Therefore, the power module is also required to have good heat dissipation capability.

Disclosure of Invention

The invention aims to solve the technical problem of providing a power packaging module which can not only operate under high voltage or high current, but also have smaller volume and good heat dissipation capability.

In order to solve the above technical problems, a technical solution adopted in the present invention is to provide a power packaging module. The power packaging module comprises an electronic component, and the electronic component at least comprises a carrier plate and a power element group. The carrier plate comprises an insulating layer, a circuit pattern layer and a conductive heat dissipation layer, wherein the circuit pattern layer and the conductive heat dissipation layer are respectively arranged on two opposite sides of the insulating layer. The power element group is arranged on the circuit pattern layer, and the power element group and the circuit pattern layer form a common circuit together. The total area of the conductive heat dissipation layer is larger than that of the circuit pattern layer, and the thickness of the circuit pattern layer is larger than that of the insulating layer.

The power packaging module provided by the invention has the beneficial effects that the power packaging module can reduce the volume of the power packaging module and enable the power packaging module to have higher operating voltage through the technical scheme that the carrier plate comprises the insulating layer, the circuit pattern layer and the conductive heat dissipation layer, the power element group is arranged on the circuit pattern layer, the total area of the power element group and the circuit pattern layer together form a common circuit, the total area of the conductive heat dissipation layer is larger than the total area of the circuit pattern layer, and the thickness of the circuit pattern layer is larger than the thickness of the insulating layer. In addition, the conductive heat dissipation layer of the carrier board can also dissipate heat energy generated during operation of the power packaging module.

For a further understanding of the nature and the technical aspects of the present invention, reference should be made to the following detailed description of the invention and the accompanying drawings, which are provided for purposes of reference only and are not intended to limit the invention.

Drawings

Fig. 1 is a schematic perspective view of a power package module according to a first embodiment of the invention.

Fig. 2 is a schematic perspective view of a power package module according to another embodiment of the invention.

Fig. 3 is a schematic top view of a carrier and a pin assembly according to a first embodiment of the present invention.

Fig. 4 is an exploded perspective view of a power package module according to a first embodiment of the invention, wherein a package layer is omitted.

Fig. 5 is a schematic top view of a power package module according to a first embodiment of the invention, wherein a package layer is omitted.

Fig. 6 is a schematic cross-sectional view taken along line VI-VI in fig. 1.

Fig. 7 is a schematic cross-sectional view of a power package module according to a second embodiment of the invention.

The reference numerals are as follows:

m1, M2: power packaging module

1: electronic assembly

10: carrier plate

100: insulating board

100a: a first surface

100b: a second surface

101: circuit pattern layer

101S: grounding welding pad

101G: grid electrode welding pad

101P: common welding pad

P1: first connecting part

P2: second connecting part

101D: power input welding pad

101A: positive electrode pad

101B: negative electrode pad

102: conductive heat dissipation layer

11: power element group

11a,11b: power element

11s: source electrode pad

11d: drain electrode pad

11g: grid electrode pad

110: power chip

111: conductive connecting piece

111t: pin part

13: temperature sensor

2: pin assembly

20: power element pin

201: connecting section

202: extension section

20S: grounding pin

20G: grid pin

20P: common pin

20D: power input pin

21: temperature sensing pin set

21A: first positive electrode pin

21B: first negative electrode pin

3: encapsulation layer

3a: top surface

3b: bottom surface

3s: side surfaces

3H: recessed region

4: heat dissipation piece

41: a first conductive layer

42: second conductive layer

43: insulating heat conductor

E1, E2: side edges

HA, HB: shortest separation distance

D1: first direction

D2: second direction

d1: first distance

d2: second distance

d3: third distance

d4: fourth distance

W1: first width of

W2: second width of

Detailed Description

The following specific embodiments are provided to illustrate the embodiments of the present invention related to a "power package module", and those skilled in the art will be able to understand the advantages and effects of the present invention from the disclosure herein. The invention is capable of other and different embodiments and its several details are capable of modifications and various other uses and applications, all of which are obvious from the description, without departing from the spirit of the invention. The drawings of the present invention are merely schematic illustrations, and are not intended to be drawn to actual dimensions. The following embodiments will further illustrate the related art content of the present invention in detail, but the disclosure is not intended to limit the scope of the present invention.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are used primarily to distinguish one element from another element or signal from another signal. In addition, the term "or" as used herein shall include any one or combination of more of the associated listed items as the case may be.

Referring to fig. 1 to fig. 2, fig. 1 and fig. 2 are schematic perspective views of a power package module according to a first embodiment of the invention at different angles. The power package module M1 of the present embodiment can be applied to a circuit design of an electronic product, and is suitable for operating under high voltage and high current. In the present embodiment, the power package module M1 includes an electronic component 1, a lead component 2, and a package layer 3.

As shown in fig. 1, the electronic component 1 of the present embodiment includes a carrier 10 and a power element group 11. The carrier 10 is used for carrying the power device group 11 and also for establishing electrical connection between a plurality of power devices in the power device group 11. In the present embodiment, a part of the circuits forming the voltage conversion system circuit is taken as an example to describe the detailed structure of the carrier 10 and the electrical connection relationship between the carrier 10 and the power device group 11 in the embodiment of the present invention.

Please refer to fig. 1 to 4. Fig. 3 is a schematic top view of a carrier according to a first embodiment of the present invention, and fig. 4 is an exploded perspective view of a power package module according to the first embodiment of the present invention, in which a package layer is omitted. The carrier 10 includes an insulating layer 100, a circuit pattern layer 101, and a conductive heat dissipation layer 102.

The material of the insulating layer 100 may be ceramic, polymer or resin composite, wherein the ceramic may be alumina, aluminum nitride or silicon nitride. The resin composite may be epoxy resin or polyimide (polyimide) containing glass cloth, and the present invention is not limited thereto. The insulating layer 100 has an opposite first surface 100a and second surface 100b.

As shown in fig. 3, the circuit pattern layer 101 is disposed on the first surface 100a of the insulating layer 100. The circuit pattern layer 101 may include a plurality of pads according to actual requirements. Further, the circuit pattern layer 101 can be used to construct a current transmission path of the plurality of power devices 11a,11b in the power device group 11. Accordingly, the shape, number and configuration of the plurality of first pads can be adjusted according to the number of the power elements 11a,11b in the power element group 11 and the soldering positions thereof.

In the present embodiment, the thickness of the circuit pattern layer 101 is larger than that of the insulating layer 100, so that a larger current can be allowed to pass through, and the power package module M1 can operate under the conditions of large voltage and large current. In one embodiment, the thickness of the circuit pattern layer 101 may range from 200 μm to 500 μm.

As shown in fig. 3, the circuit pattern layer 101 of the present embodiment may include a ground pad 101S, two gate pads 101G, a common pad 101P, and a power input pad 101D, but the invention is not limited thereto. In the present embodiment, the power package module M1 is an in-line power package module. Accordingly, each of the ground pad 101S, the gate pad 101G, the common pad 101P, and the power input pad 101D has a portion extending toward the same side E1 of the insulating layer 100 (or the carrier 10) and an end portion adjacent to the side E1 of the insulating layer 100, but the invention is not limited thereto.

When the power package module M1 is operated, the ground pad 101S, the common pad 101P, and the power input pad 101D should be able to allow a large current to pass. Therefore, the area of any one of the ground pad 101S, the common pad 101P, and the power input pad 101D may be larger than the area of each gate pad 101G.

Referring to fig. 3, in the present embodiment, the common pad 101P has an L-shape in plan view, and has a first connection portion P1 extending along a first direction D1 and a second connection portion P2 extending along a second direction D2. In addition, by providing the common pad 101P with an L-shaped top view, the area occupied by the wiring pattern layer 101 can be reduced, thereby further reducing the overall size of the power package module M1.

The first connection portion P1 extends toward the side edge E1 of the carrier 10 in the first direction D1 and is adjacent to the power input pad 101D. The first connection portion P1 and the power input pad 101D are separated from each other by a first distance D1. In addition, the first connection portion P1 and the gate pad 101G closest thereto are separated from each other by a second distance d2, and the first distance d1 is greater than the second distance d2. By widening the first distance D1 between the first connection portion P1 and the power input pad 101D, arcing between the common pad 101P and the power input pad 101D can be prevented from damaging the element.

The second connection portion P2 of the common pad 101P extends from one end of the first connection portion P1 to a position close to the ground pad 101S. In the present embodiment, the second connection portion P2 of the common pad 101P and the ground pad 101S are separated by a third distance d3, and the third distance d3 is also greater than the fourth distance d2 between the ground pad 101S and the other gate pad 101G, so as to avoid arcing between the common pad 101P and the ground pad 101S.

Referring to fig. 2 again, in the present embodiment, the conductive heat dissipation layer 102 is disposed on the second surface 100b of the insulating layer 100. That is, the circuit pattern layer 101 and the conductive heat dissipation layer 102 are disposed on opposite sides of the insulating layer 100.

In this embodiment, the total area of the conductive heat dissipation layer 102 is larger than the total area of the circuit pattern layer 101. In addition, in one embodiment, the conductive heat dissipation layer 102 may be a thick metal plate, and its thickness may be greater than the sum of the thickness of the insulating layer 100 and the thickness of the circuit pattern layer 101. For example, the thickness of the conductive heat dissipation layer 102 may range from 800 μm to 1500 μm, and the thickness of the insulating layer 100 may range from 50 μm to 150 μm.

In addition, the material constituting the wiring pattern layer 101 may be selected to have a high conductivity, such as: copper or alloys thereof to reduce parasitic resistance. The material constituting the conductive heat dissipation layer 102 may be selected with emphasis on materials having high thermal conductivity, such as: copper, aluminum, or alloys thereof to dissipate heat generated during operation of the power package module M1.

Referring to fig. 4 and fig. 5 together, fig. 4 is a schematic exploded perspective view of a power package module omitting a package layer according to a first embodiment of the present invention, and fig. 5 is a schematic top view of a power package module omitting a package layer according to a first embodiment of the present invention. The power element group 11 is disposed on the carrier 10 and is located on the circuit pattern layer 101.

It should be noted that, in many different system circuits (such as a voltage conversion circuit or a rectifying circuit), general-purpose circuits are generally included, for example: two power elements connected in series. Accordingly, the power package module M1 provided by the embodiment of the present invention is not a discrete component, but a package module with a modular design (modular design). Further, the power element group 11 and the circuit pattern layer 101 may together form a common circuit to be applied in a variety of different normalizing system circuits.

In the present embodiment, the power device group 11 may include a plurality of power devices 11a,11b (two power devices are shown in fig. 4 as an example), and the two power devices 11a,11b are electrically connected to the circuit pattern layer 101 and are connected in series. When the power package module M1 is electrically connected to an external system circuit, the power devices 11a and 11b may be electrically connected to other control devices or passive devices, but the invention is not limited thereto.

The power element is, for example, an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), a Metal-Oxide-semiconductor field effect transistor (MOSFET), or any combination thereof. The material of the power element is, for example, silicon carbide, silicon or gallium nitride.

Referring to fig. 4 and 5, each of the power devices 11a and 11b may include a source pad 11s, a drain pad 11d, and a gate pad 11g. It should be noted that the power devices 11a and 11b of the present embodiment are primarily packaged devices, and the drain pad 11d, the gate pad 11g and the source pad 11s are all located on the same side of the power devices 11a and 11b. Therefore, the power devices 11a and 11b of the present embodiment can be directly disposed on the carrier 10 by the surface bonding technology without using bonding wires, so that the overall size of the power package module M1 can be reduced.

In detail, each of the power devices 11a,11b may include a power chip 110 and a conductive connection 111 connected to the power chip 110. The source pad 11s and the gate pad 11g are located on the active surface of the power chip 110. The conductive connection 111 is disposed on the back surface of the power chip 110, and extends from the power chip 110 to the circuit pattern layer 101 on the carrier 10. Further, the conductive connection member 111 has a pin portion 111t, and the drain pad 11d is disposed at the end of the pin portion 111 t.

As shown in fig. 5, in the present embodiment, the arrangement orientations of the two power elements 11a,11b are different. Further, one of the power devices 11A is disposed with a side of the power chip 110 facing the side edge E1 of the carrier 10. In other words, the power element 11A is configured such that its conductive connection 111 extends in the first direction D1. The other power element 11B is disposed with the side of the power chip 110 facing the power element 11A. That is, the pin 111t of the power device 11B is disposed toward the other side edge E2 of the carrier 10. In other words, the power element 11B is configured such that its conductive connection 111 extends in the second direction D2.

As shown in fig. 5, two power devices 11a,11b may be connected in series with each other through the circuit pattern layer 101. In detail, when the power devices 11a,11b are disposed on the circuit pattern layer 101, two gate pads 11G of the two power devices 11a,11b may be connected to the two gate pads 101G, respectively. The source pad 11S of one of the power devices 11A is electrically connected to the ground pad 101S, and the drain pad 11d is electrically connected to the second connection portion P2 of the common pad 101P. The source pad 11s of the other power device 11B is electrically connected to the first connection portion P1 of the common pad 101P, and the drain pad 11D is electrically connected to the power input pad 101D.

Referring to fig. 4 and 5 again, the electronic component 1 of the present embodiment further includes at least one temperature sensor 13. In addition, the circuit pattern layer 101 further includes a positive electrode pad 101A and a negative electrode pad 101B. The two electrodes of the temperature sensor 13 may be electrically connected to the positive electrode pad 101A and the negative electrode pad 101B, respectively. In the present embodiment, when the power device 11 is operating, the temperature sensor 13 can be used to detect the temperature inside the power package module M1 to avoid the damage of the power devices 11a,11b due to overheating. In one embodiment, the temperature sensor 13 may be a non-contact temperature sensor, such as: a resistive temperature sensor (resistance temperature detector, RTD), but the invention is not limited thereto.

Referring to fig. 4, the lead assembly 2 is disposed on the carrier 10 and connected to the circuit pattern layer 101, so that the temperature sensor 13 and the power devices 11a and 11b can be electrically connected to another external circuit. Further, the pin assembly 2 may include a plurality of power element pins 20. Each power device pin 20 may be electrically connected to a corresponding power device 11a,11b through the circuit pattern layer 101.

A plurality of power element pins 20 may be defined for receiving or outputting a variety of different signals. For example, the plurality of power device pins 20 may include at least a ground pin 20S, two gate pins 20G, a common pin 20P, and a power input pin 20D, but the invention is not limited thereto.

As shown in fig. 4 and 5, the ground pin 20S is electrically connected to the ground pad 101S. The two gate pins 20G are connected to the two gate pads 101G, respectively. In addition, the common pin 20P and the power input pin 20D are connected to the common pad 101P and the power input pad 101D, respectively.

Accordingly, when the power device 11A is turned on and a voltage difference is applied between the ground pin 20S and the common pin 20P, a current can flow from the common pin 20P to the ground pin 20S through the power device 11A. In addition, when the power element 11B is turned on and a voltage difference is applied between the power input pin 20D and the common pin 20P, a current can flow from the power input pin 20D to the common pin 20P via the power element 11B.

It should be noted that the cross-sectional areas of the ground pin 20S, the common pin 20P, and the power input pin 20D are larger than those of other power element pins (e.g., the gate pin 20G) to allow a larger current to pass. In addition, as shown in fig. 5, in the present embodiment, the spacing distances between the plurality of power element pins 20 are not necessarily the same. In detail, two adjacent power element pins 20 (e.g., common pin 20P and power input pin 20D) for transmitting a large current may be disposed with a larger separation distance.

In the present embodiment, each of the power element pins 20 is a linear pin, but the invention is not limited thereto. For example, in another embodiment, each power element pin 20 may be a bent pin. In yet another embodiment, the plurality of power element pins 20 may include straight pins and bent pins.

In the embodiment of fig. 5, a portion of the power element pins 20, such as: the ground pin 20S, the common pin 20P, and the power input pin 20D have a connection section 201 and an extension section 202 connected to each other. The connection section 201 is directly connected to the circuit pattern layer 101 of the carrier 10, and the extension section 202 is not contacted with the carrier 10.

In this embodiment, the connecting section 201 and the extending section 202 have different widths, respectively. In detail, the connecting section 201 has a first width W1 in the second direction D2, and the extending section 202 has a second width W2 in the second direction D2. In this embodiment, the first width W1 is larger than the second width W2. Accordingly, for the two adjacent power input pins 20D and the common pin 20P, the shortest separation distance HA between the two adjacent connection segments 201 is greater than the shortest separation distance HB between the two adjacent extension segments 202, but the invention is not limited thereto.

Since the first width W1 of the connection section 201 is larger, a larger current can be allowed to pass, but the shortest separation distance HA between two adjacent connection sections 201 is also shortened. In an embodiment, the shortest separation distance HA can be adjusted according to the operating voltage of the power packaging module M1 to avoid arcing.

In addition, as shown in fig. 4 and 5, the pin assembly 2 of the present embodiment may further include a temperature sensing pin set 21 electrically connected to the temperature sensor 13 through the circuit pattern layer 101. The temperature sensing pin group 21 may include a positive electrode pin 21A and a negative electrode pin 21B connected to the positive electrode pad 101A and the negative electrode pad 101B, respectively.

Referring to fig. 1, 2 and 6, the power package module M1 further includes a package layer 3, and the package layer 3 at least encapsulates the electronic component 1. Since the power package module M1 of the present embodiment is an in-line power package module, a portion of each of the plurality of power element pins 20 protrudes from the same side surface 3s of the package layer 3 and is exposed outside the package layer 3.

When the power package module M1 is applied to another system circuit (not shown), the pin assembly 2 of the power package module M1 is correspondingly connected to a specific voltage terminal, so that the plurality of power devices 11a,11b and other electronic devices (such as the temperature sensor 13) in the power package module M1 can be electrically connected to the system circuit.

Referring to fig. 1 and fig. 2 again, in the present embodiment, the side surface 3s of the encapsulation layer 3 further has at least one recess 3H (2 are shown as an example in fig. 2). At least one recessed region 3H may be located between two adjacent power element pins 20 (e.g., common pin 20P and power input pin 20D) that need to pass a large current to increase the creepage distance (creepage distance) between common pin 20P and power input pin 20D. Referring to fig. 1 and fig. 2, it should be noted that the recess region 3H of the present embodiment extends from the top surface 3a of the encapsulation layer 3 to the bottom surface 3b of the encapsulation layer 3. Thus, leakage between two adjacent power element pins 20 can be avoided to reduce product reliability.

It should be noted that, as shown in fig. 6, the encapsulation layer 3 does not completely encapsulate the conductive heat dissipation layer 102. In other words, the outer surface of the conductive heat dissipation layer 102 is exposed on the bottom surface 3b of the packaging layer 3, so as to rapidly dissipate the heat generated during the operation of the power device 11. In the present embodiment, the outer surface of the conductive heat dissipation layer 102 is aligned with the bottom surface 3b of the encapsulation layer 3, but the invention is not limited thereto. In another embodiment, the outer surface of the conductive heat dissipation layer 102 may also protrude from the bottom surface 3b of the encapsulation layer 3 or be concave relative to the bottom surface 3b of the encapsulation layer 3.

Referring to fig. 6, a portion of the packaging layer 3 fills the gap between the power chip 110 and the conductive connection piece 111 of each power device 11a,11b and the recess pattern defined by the circuit pattern layer 101, so as to prevent the power packaging module M1 from damaging the device due to arc discharge (arcing) when operating at high voltage, thereby improving the voltage-withstanding capability of the power packaging module M1.

Fig. 7 is a schematic partial cross-sectional view of a power package module according to a second embodiment of the invention. Elements of the present embodiment that are the same as those of the embodiment of fig. 6 have the same or similar reference numerals, and will not be described again. The power package module M2 of the present embodiment further includes a heat sink 4, and the heat sink 4 is located on the power device group 11 for dissipating heat generated during operation of the power devices 11a,11b. That is, the heat spreader 4 and the conductive heat spreader 102 are respectively located on two opposite sides of the carrier 10. Accordingly, the power devices 11a,11b are disposed between the heat sink 4 and the carrier 10.

In one embodiment, the heat sink 4 is, for example, a copper-clad ceramic substrate (Direct Bonded Copper, DBC) or a direct electroplated copper ceramic substrate (Direct Plated Copper, DPC), but the invention is not limited thereto. As shown in fig. 7, the heat sink 4 may include a first conductive layer 41, a second conductive layer 42, and an insulating heat conductor 43 between the first conductive layer 41 and the second conductive layer 42. The first conductive layer 41 has two pads (not numbered) separated from each other and is disposed on the two power devices 11a,11b, respectively. The insulating heat conductor 43 is, for example, a ceramic plate or an insulating adhesive material with a high thermal conductivity, and the present invention is not limited thereto. The second conductive layer 42 is disposed on the insulating heat conductor 43 and has a larger area than the first conductive layer 41.

In addition, the heat sink 4 is partially exposed outside the encapsulation layer 3. As shown in fig. 6, the second conductive layer 42 of the heat spreader 4 is exposed on the top surface 3a of the package layer 3, so that the heat generated during the operation of the power package module M2 is more effectively dissipated to the outside.

Advantageous effects of the embodiment

The power packaging module provided by the invention has the beneficial effects that the size of the power packaging modules M1 and M2 can be reduced by adopting the technical scheme that the carrier plate 10 comprises the insulating layer 100, the circuit pattern layer 101 and the conductive heat dissipation layer 102, the power element group 11 is arranged on the circuit pattern layer 101, the power element group 11 and the circuit pattern layer 101 together form a common circuit, the total area of the conductive heat dissipation layer 102 is larger than the total area of the circuit pattern layer 101, and the thickness of the circuit pattern layer 101 is larger than the thickness of the insulating layer 100, so that the power packaging modules M1 and M2 have higher operation voltages.

Furthermore, the present invention uses the circuit pattern layer 101 of the carrier 10 to replace the conventional bonding wire (bonding wire) as the current transmission path of the power devices 11a,11b. The power package modules M1, M2 may omit bonding wires, have smaller volume, and may allow larger current to pass therethrough, thereby increasing the operating voltage of the power package modules M1, M2. In addition, the conductive heat dissipation layer 102 of the carrier 10 can also be used to dissipate heat generated during operation of the power package modules M1, M2.

In addition, in the power package modules M1 and M2 of the embodiment of the invention, by providing the side surface 3s of the package layer 3 with the recess area 3H, the recess area 3H is located between two adjacent power device pins 20 (e.g. the common pin 20P and the power input pin 20D) for transmitting a large current, so as to increase the creepage distance (creepage distance) between the two adjacent power device pins 20, thereby avoiding electric leakage and improving the reliability and the voltage-withstanding capability of the power package modules M1 and M2.

The power package modules M1, M2 provided in the embodiments of the present invention are not discrete components, but components that are designed in a modular manner. However, unlike existing power modules (which utilize a plurality of different discrete elements to form an overall normalized system circuit), the power package modules M1, M2 of the present embodiment are part of a common circuit that forms a variety of system circuits. Therefore, the power packaging modules M1, M2 according to the embodiment of the invention can be applied to different normalized system circuits according to actual requirements. Compared to the existing power module, the power package modules M1, M2 of the embodiment of the invention may have a greater applicability (applicability).

On the other hand, according to the actual requirement, a temperature sensor 13 for detecting temperature may be disposed on the carrier 10, and when the power device set 11 is operated, the temperature sensor 13 may be used to detect the temperature inside the power package modules M1, M2, so as to prevent the power devices 11a,11b from being damaged due to overheating.

The above disclosure is only a preferred embodiment of the present invention and is not intended to limit the claims of the present invention, so that all equivalent technical changes made by the application of the specification and the drawings of the present invention are included in the claims of the present invention.

Claims

1. A power package module, the power package module comprising:

an electronic assembly, comprising:

the carrier comprises an insulating layer, a circuit pattern layer and a conductive heat dissipation layer, wherein the conductive heat dissipation layer and the circuit pattern layer are respectively positioned on two opposite sides of the insulating layer; and

A power element group arranged on the circuit pattern layer, wherein the power element group and the circuit pattern layer together form a general circuit;

the total area of the conductive heat dissipation layer is larger than that of the circuit pattern layer, and the thickness of the circuit pattern layer is larger than that of the insulating layer.

2. The power package module of claim 1, wherein the electronic assembly further comprises: and the temperature sensor is arranged on the circuit pattern layer and is electrically connected with the circuit pattern layer.

3. The power package module of claim 1, wherein a thickness of the conductive heat sink layer is greater than a sum of a thickness of the line pattern layer and a thickness of the insulating layer.

4. The power package module of claim 1, wherein the circuit pattern layer includes a ground pad, a common pad and a power input pad, the common pad having an L-shape in plan view and including a first connection portion extending toward one side edge of the carrier, and a second connection portion extending from the first connection portion to a position close to the ground pad and separated from the ground pad.

5. The power package module of claim 4, wherein the circuit pattern layer further comprises two gate pads, the first connection portion and the power input pad are adjacent to each other and separated from each other by a first distance, the first connection portion is adjacent to one of the gate pads and separated from each other by a second distance, and the first distance is greater than the second distance.

6. The power package module of claim 4 wherein the power device group comprises two power devices, each of the power devices comprising a gate pad, a source pad, and a drain pad, wherein the source pad of one of the power devices and the drain pad of the other power device are connected to the common pad.

7. The power package module of claim 1 wherein the power element group comprises two power elements, the two power elements being connected in series with each other through the line pattern layer.

8. The power package module of claim 7 wherein the power element group includes two power elements, each of the power elements including a power chip and a conductive connection extending from a back surface of the power chip to the carrier plate, wherein one of the power elements is configured to extend the conductive connection in a first direction and the other of the power elements is configured to extend the conductive connection in a second direction.

9. The power package module of claim 1, wherein the power package module further comprises:

the pin assembly comprises a plurality of power element pins, and each power element pin is electrically connected with the power element group through the circuit pattern layer; and

and the packaging layer is used for coating the electronic component, wherein a part of each power element pin protrudes out of one side surface of the packaging layer and is exposed out of the packaging layer.

10. The power package module of claim 9 wherein the side surface of the encapsulation layer further has a recessed region between two adjacent ones of the power element pins and extending in a thickness direction of the encapsulation layer.

11. The power package module of claim 9, wherein an outer surface of the conductive heat spreader layer is exposed at a bottom surface of the package layer.

12. The power package module of claim 1, wherein the power package module further comprises: the heat dissipation piece is arranged on the electronic component and comprises a first conductive layer, a second conductive layer and an insulating heat conductor positioned between the first conductive layer and the second conductive layer.