CN117080120B - Automatic control system of silicon nitride electrostatic chuck - Google Patents
Automatic control system of silicon nitride electrostatic chuck Download PDFInfo
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- CN117080120B CN117080120B CN202311045353.9A CN202311045353A CN117080120B CN 117080120 B CN117080120 B CN 117080120B CN 202311045353 A CN202311045353 A CN 202311045353A CN 117080120 B CN117080120 B CN 117080120B
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 159
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 159
- 230000005684 electric field Effects 0.000 claims abstract description 161
- 239000002156 adsorbate Substances 0.000 claims abstract description 54
- 238000001179 sorption measurement Methods 0.000 claims abstract description 49
- 238000011156 evaluation Methods 0.000 claims description 42
- 238000001514 detection method Methods 0.000 claims description 36
- 238000004458 analytical method Methods 0.000 claims description 26
- 230000000694 effects Effects 0.000 claims description 13
- 230000006698 induction Effects 0.000 claims description 13
- 230000033228 biological regulation Effects 0.000 claims description 9
- 230000001276 controlling effect Effects 0.000 claims description 4
- 230000003631 expected effect Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 7
- 230000003993 interaction Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 18
- 238000005070 sampling Methods 0.000 description 12
- 239000000523 sample Substances 0.000 description 10
- 230000003068 static effect Effects 0.000 description 10
- 230000005686 electrostatic field Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000005355 Hall effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013480 data collection Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacture and material processing, and provides an automatic control system of a silicon nitride electrostatic chuck. According to the invention, the temperature control module and the electric field adjusting module are mutually matched, so that the adsorption quality of the silicon nitride electrostatic chuck is improved, the quality of the surface of an adsorbate is prevented from being damaged to the greatest extent, and the silicon nitride electrostatic chuck has the advantages of high adsorption force control precision and good interaction performance.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing and material processing, in particular to an automatic control system of a silicon nitride electrostatic chuck.
Background
With the development of microelectronics and semiconductor technology, the processing and transport demands of silicon nitride sheets are increasing. Although the conventional electrostatic chuck can achieve the suction of the sheet, limitations of the conventional system are increasingly manifested in a high-precision and high-efficiency production environment.
As in the prior art CN111900120B, a method for improving the service life of an electrostatic Chuck is disclosed, and in the actual production process, the electrostatic Chuck (ESC) is generally scrapped due to the increase of the loop current of the process chamber when the working time reaches about 1500-2000 h.
Another typical prior art method of polishing an electrostatic chuck, such as that disclosed in CN104325365a, is that the surface of the electrostatic chuck is provided with a number of micro-bumps for carrying the wafer, and the flatness of the bumps is very high, if there is a small difference, this will cause the thermal conductivity of the wafer temperature at the location of the difference to be different from that of other locations and cause the wafer to arch, this small difference will gradually accumulate during the long etching process and will eventually cause the critical dimensions of the wafer to be different and will eventually cause the wafer yield to decrease. In the prior art, alumina and other materials are generally used as the surface of the electrostatic chuck, so that the surface of the electrostatic chuck is very hard and corrosion-resistant, in order to keep the flatness of the protrusions of the surface of the electrostatic chuck, a silicon wafer is generally used for conveying and polishing, the silicon wafer is used for being adsorbed on the electrostatic chuck, and the protrusions are polished by utilizing the tiny displacement of the instant of electrostatic discharge, so that a long time is generally required in the process, and meanwhile, the surface quality of adsorbed valuable substances is extremely easy to be reduced in the adsorption process.
With the development of high-precision manufacturing technology, the requirements for the electrostatic chuck are also increasing. Silicon nitride electrostatic chucks are of great interest due to their unique properties. But in order to fully exploit its capabilities, an efficient and accurate control system is needed.
The invention is made for solving the problems that the quality of the electrostatic chuck in the adsorption process is poor, the surface quality of an adsorbate is easily damaged by the electrostatic chuck, the adsorption force control precision of the electrostatic chuck is poor, the interaction performance is poor, the intelligent degree is low and the like in the prior art.
Disclosure of Invention
The invention aims to provide an automatic control system of a silicon nitride electrostatic chuck, aiming at the defects existing at present.
In order to overcome the defects in the prior art, the invention adopts the following technical scheme:
an automatic control system of a silicon nitride electrostatic chuck comprises a server and an object to be adsorbed, and further comprises an induction module, a temperature control module and an electric field adjusting module, wherein the server is respectively connected with the induction module, the temperature control module and the electric field adjusting module;
the sensing module detects state data of the silicon nitride electrostatic chuck in real time, the temperature control module adjusts temperature data of the chuck according to the state data of the sensing module, and the electric field adjusting module evaluates the adsorption of the silicon nitride electrostatic chuck according to the state data of the silicon nitride electrostatic chuck, the temperature data of the silicon nitride electrostatic chuck and the weight data of adsorbate which are sensed by the sensing module to form an evaluation result, and automatically adjusts the electric field strength according to the evaluation result;
the electric field adjusting module comprises a data calling unit, an evaluation unit and an electric field control unit, wherein the data calling unit calls state data of the silicon nitride electrostatic chuck, temperature data of the silicon nitride electrostatic chuck and the weight of adsorbate, which are obtained by sensing by the sensing module, and the temperature data of the silicon nitride electrostatic chuck and the weight data of the adsorbate, the evaluation unit evaluates the adsorption of the silicon nitride electrostatic chuck according to the state data of the silicon nitride electrostatic chuck, the temperature data of the silicon nitride electrostatic chuck and the weight data of the adsorbate, and the electric field control unit controls the electric field intensity of the silicon nitride electrostatic chuck according to the evaluation result of the evaluation unit.
Optionally, the sensing module includes a sensing unit and a memory, where the sensing unit is configured to collect status data of the silicon nitride electrostatic chuck, and the memory stores the status data collected by the sensing unit;
the sensing unit comprises a temperature detection member and an electric field intensity detection member, wherein the temperature detection member detects temperature data of the silicon nitride electrostatic chuck, and the electric field intensity detection member detects electric field intensity of the silicon nitride electrostatic chuck;
the temperature detection component is embedded into the surface or the inside of the sucker, and the electric field strength detection component is arranged around the silicon nitride electrostatic sucker;
wherein the status data includes temperature and electric field strength.
Optionally, the temperature control module includes a temperature analysis unit and a temperature control unit, the temperature analysis unit obtains the state data detected by the sensing unit to analyze the temperature of the silicon nitride electrostatic chuck, and the temperature control unit controls the temperature of the silicon nitride electrostatic chuck according to the temperature analysis unit;
wherein the temperature control unit controls different temperatures for different adsorbates.
Optionally, the evaluation unit obtains the state data of the silicon nitride electrostatic chuck, the temperature data of the electrostatic chuck, the weight and the position parameters of the adsorbate, and the Control index Control of the silicon nitride electrostatic chuck, wherein the state data, the temperature data, the weight and the position parameters of the adsorbate, are obtained through sensing by the sensing module, and the Control index Control is calculated according to the following formula:
wherein a, b, c are weight coefficients, the values of which are set by an operator or a system and satisfy: a+b+c=1, e data E, real-time electric field intensity data of the silicon nitride electrostatic chuck max Is the maximum electric field intensity value, W, which can be generated by the silicon nitride electrostatic chuck data For the weight data of the adsorbate, the weight data is set by an operator according to the actual condition of the adsorbate, W max For maximum weight of adsorbate, its value is determined according to the type of silicon nitride electrostatic chuck, T 0 T is the surface temperature regulation index of the silicon nitride electrostatic chuck, and the value of the temperature regulation index is determined by a temperature analysis unit;
the evaluation unit transmits the evaluation result to an electric field control unit, and controls the electric field intensity of the silicon nitride electrostatic chuck through the electric field control unit.
Optionally, the temperature analysis unit calculates the surface temperature adjustment index T of the silicon nitride electrostatic chuck according to the following formula:
in the formula, alpha and beta are empirical coefficients, the value of the empirical coefficients is obtained empirically, ra is the humidity of the environment, the value is set by an operator according to actual conditions, ac is the effective adsorption area of the adsorbate, and the value of the effective adsorption area is directly determined by the areas of the adsorbate and the adsorption position of the silicon nitride electrostatic chuck.
Optionally, the electric field control unit calculates the electric field control intensity value E of the silicon nitride electrostatic chuck according to the following formula s ：
Wherein, control is the Control index of the silicon nitride electrostatic chuck, k is a calibration coefficient, and the value of k is fitted by historical data;
the electric field control unit controls the intensity value E according to the electric field s The electric field of the silicon nitride electrostatic chuck is controlled to maintain stable adsorption of adsorbates.
Optionally, the electric field control unit includes an actuator and a feedback detection member, and the actuator receives the analyzed electric field intensity value E s And converting the instruction into a specific electric field intensity adjusting operation, wherein the feedback detection component monitors the actual effect after the electric field intensity is adjusted, compares the actual effect with the expected effect, if deviation exists, feeds back to the evaluation unit for further evaluation, recalculates the electric field control intensity value of the silicon nitride electrostatic chuck according to the evaluation result, and readjusts the electric field intensity.
Optionally, the control flow of the electric field adjusting module includes:
s1, a data calling unit acquires necessary data from an induction module and a temperature control module in real time and stores the necessary data in a data buffer;
s2, the evaluation unit takes out data from the data cache module periodically or according to the need, and evaluates the Control index Control of the silicon nitride electrostatic chuck;
s3, the electric field control unit acquires an evaluation result of the evaluation unit and analyzes an electric field control intensity value E of the silicon nitride electrostatic chuck s And controlling the electric field to be a strength value E s Converting the control command into a control command and transmitting the control command to an executor;
and S4, the actuator adjusts the electric field intensity of the silicon nitride electrostatic chuck according to the received control instruction, and monitors the actual effect through a feedback detection component.
The beneficial effects obtained by the invention are as follows:
1. the temperature control module and the electric field adjusting module are matched with each other, so that the effect of the silicon nitride electrostatic chuck is better, the adsorption quality of the silicon nitride electrostatic chuck is improved, the quality of the surface of an adsorbate is prevented from being damaged to the greatest extent, and the silicon nitride electrostatic chuck has the advantages of high adsorption force control precision and good interaction performance;
2. the temperature of the silicon nitride electrostatic chuck is controlled by the temperature control unit and the temperature analysis unit, so that the temperature is constant, the adsorption or clamping process is ensured to be more accurate and reliable, the influence of dust or temperature on the adsorbate deformation on the adsorption or clamping process is prevented to the maximum extent, and the clamping or adsorption stability and reliability are improved;
3. the temperature control module and the electric field adjusting module are matched with each other, so that the silicon nitride electrostatic chuck is more stable and reliable in the process of adsorbing or clamping an adsorbate, and the defect of unreliable adsorption state caused by overlarge temperature change of the silicon nitride electrostatic chuck is overcome;
4. the temperature of the silicon nitride electrostatic chuck is controlled by the temperature control unit, so that the response speed is improved, the conductivity of the silicon nitride electrostatic chuck is improved, the establishment of an electrostatic field is accelerated, and the response speed of the chuck is higher;
5. through the mutual cooperation of the data calling unit, the evaluation unit and the electric field control unit, the adsorption state of the silicon nitride electrostatic chuck can be accurately controlled, the adsorption control precision of the silicon nitride electrostatic chuck is improved, the surface quality of an adsorbate is protected, and the intelligent control device has the advantages of being accurate in control precision and high in intelligent degree.
Drawings
The invention will be further understood from the following description taken in conjunction with the accompanying drawings. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the embodiments. Like reference numerals designate like parts in the different views.
Fig. 1 is a schematic block diagram of the overall structure of the present invention.
FIG. 2 is a block diagram of the sensing module and the temperature control module of the present invention.
FIG. 3 is a block diagram of a data call unit and an evaluation unit according to the present invention.
Fig. 4 is a schematic flow chart of the evaluation unit and the electrostatic control unit of the present invention.
Fig. 5 is a block schematic diagram of the sampling unit, the balance analysis unit and the static control unit according to the present invention.
Fig. 6 is a schematic diagram of a test of a silicon nitride electrostatic chuck according to the present invention.
FIG. 7 is a schematic view in partial cross-section at A-A in FIG. 6.
Fig. 8 is an enlarged schematic view at B in fig. 7.
Fig. 9 is a schematic diagram of a distribution scenario of an electrostatic sensor array and a silicon nitride electrostatic chuck of the present invention.
Reference numerals illustrate: 1. an actuator; 2. an electric field intensity detecting member; 3. an electrostatic control unit; 4. a silicon nitride electrostatic chuck; 5. a temperature detection probe; 6. an array of electrostatic sensors.
Detailed Description
The following embodiments of the present invention are described in terms of specific examples, and those skilled in the art will appreciate the advantages and effects of the present invention from the disclosure herein. The invention is capable of other and different embodiments and its several details are capable of modification and variation in various respects, all without departing from the spirit of the present invention. The drawings of the present invention are merely schematic illustrations, and are not intended to be drawn to actual dimensions. The following embodiments will further illustrate the related art content of the present invention in detail, but the disclosure is not intended to limit the scope of the present invention.
Embodiment one: according to fig. 1, 2, 3, 4, 5, 6, 7, 8 and 9, the embodiment provides an automatic control system of a silicon nitride electrostatic chuck, the automatic control system comprises a server and an object to be adsorbed, the automatic control system further comprises an induction module, a temperature control module and an electric field regulation module, the server is respectively connected with the induction module, the temperature control module and the electric field regulation module, and intermediate data of the induction module, the temperature control module and the electric field regulation module are stored in a database of the server;
the sensing module detects state data of the silicon nitride electrostatic chuck 4 in real time, the temperature control module adjusts temperature data of the chuck according to the state data of the sensing module, and the electric field adjusting module evaluates the adsorption of the silicon nitride electrostatic chuck 4 electrostatic chuck according to the state data of the silicon nitride electrostatic chuck 4 electrostatic chuck, the temperature data of the silicon nitride electrostatic chuck 4 electrostatic chuck and the weight data of an adsorbate, which are sensed by the sensing module, to form an evaluation result, and automatically adjusts the electric field intensity according to the evaluation result;
in this embodiment, the adsorbates include, but are not limited to, the following list of several: semiconductor chips, precision electronic devices, minute objects, and the like, and at the same time, can also participate in the assembly process of the substances to be adsorbed;
the electric field adjusting module comprises a data calling unit, an evaluating unit and an electric field control unit, wherein the data calling unit calls state data of the silicon nitride electrostatic chuck 4 electrostatic chuck, temperature data of the electrostatic chuck and weight of an adsorbate, which are obtained by sensing by the sensing module, and the temperature data of the electrostatic chuck 4 electrostatic chuck and the weight data of the adsorbate, the evaluating unit evaluates the adsorption of the silicon nitride electrostatic chuck 4 electrostatic chuck according to the state data of the silicon nitride electrostatic chuck 4 electrostatic chuck, the temperature data of the silicon nitride electrostatic chuck 4 electrostatic chuck and the weight data of the adsorbate, and the electric field control unit controls the electric field intensity of the silicon nitride electrostatic chuck 4 according to the evaluation result of the evaluating unit;
the automatic control system also comprises a central processor, wherein the central processor is respectively connected with the induction module, the temperature control module and the electric field adjusting module in a control way, and under the centralized control of the central processor, the modules are operated in a cooperative mode;
in addition, in the present embodiment, the size and shape of the electrostatic chuck 4 using silicon nitride are very small, ensuring accurate positioning of the processing object, and at the same time, for applications (e.g., assembly of some electronic components) where magnetic interference needs to be avoided, non-magnetism of silicon nitride is a great advantage; the manufacturing process of the silicon nitride can ensure the surface smoothness of the sucker, reduce the potential damage to processing materials and provide stable adsorption force; in addition, silicon nitride has particularly good electrical insulation properties, which means that it does not cause short circuits or other related problems in electrical applications;
optionally, the sensing module includes a sensing unit and a memory, where the sensing unit is configured to collect state data of the silicon nitride electrostatic chuck 4, and the memory stores the state data collected by the sensing unit;
the sensing unit comprises a temperature detection member and an electric field intensity detection member 2, wherein the temperature detection member detects temperature data of the silicon nitride electrostatic chuck 4, and the electric field intensity detection member 2 detects electric field intensity of the silicon nitride electrostatic chuck 4 electrostatic chuck;
the temperature detection member is embedded on the surface or the inside of the sucker, and the electric field strength detection member 2 is arranged around the silicon nitride electrostatic sucker 4;
wherein the status data includes temperature and electric field strength;
as shown in fig. 8, in the present embodiment, the temperature detecting means includes a temperature detecting probe 5 and a first data collector, the temperature detecting probe 5 collects the temperature of the silicon nitride electrostatic chuck 4, and the first data collector stores the temperature data collected by the temperature detecting probe 5;
the first data collector stores temperature data acquired by the temperature detection probe 5 in real time;
in the present embodiment, the temperature detecting probe 5 includes, but is not limited to, the following: a micro thermocouple;
the electric field intensity detection member 2 comprises an electric field detection probe and a second data collector, wherein the electric field detection probe collects electric field intensity data of the silicon nitride electrostatic chuck 4, and the second data collector stores the electric field intensity data collected by the electric field detection probe;
the electric field detection probes include, but are not limited to, the following list of several: electric field detectors, hall effect sensors, etc.;
wherein the hall effect sensor: in some configurations, a hall effect sensor may be used to measure a magnetic field change associated with an electric field;
meanwhile, in this embodiment, the operation mode of the sensing unit includes:
1) The sensor continuously or periodically collects data and converts the data into an electric signal;
2) These electrical signals are transmitted to a central processing unit for analysis;
optionally, the temperature control module includes a temperature analysis unit and a temperature control unit, the temperature analysis unit obtains the state data detected by the sensing unit to analyze the temperature of the silicon nitride electrostatic chuck 4, and the temperature control unit controls the temperature of the silicon nitride electrostatic chuck 4 according to the temperature analysis unit;
wherein the temperature control unit controls different temperatures for different adsorbates;
the temperature control unit acquires parameter data of the current adsorbate, wherein the parameter data comprise the type, model size, working temperature and the like of the adsorbate;
the temperature control unit acquires an analysis result of the temperature analysis unit and combines the parameter data to maintain the temperature of the silicon nitride electrostatic chuck 4;
the temperature of the silicon nitride electrostatic chuck 4 is controlled by the temperature control unit and the temperature analysis unit, so that the temperature is constant, the adsorption or clamping process is ensured to be more accurate and reliable, the influence of dust or temperature on the adsorbate deformation on the adsorption or clamping process is prevented to the greatest extent, and the stability and reliability of clamping or adsorption are improved;
meanwhile, the temperature of the silicon nitride electrostatic chuck 4 is controlled through the temperature control unit, so that the response speed is improved, the conductivity of the silicon nitride electrostatic chuck 4 electrostatic chuck is improved, the establishment of an electrostatic field is accelerated, and the response speed of the chuck is higher;
when the silicon nitride electrostatic chuck 4 is operated at a lower temperature, this increases the risk of electrostatic discharge, as moisture in the air may condense on the chuck or wafer surface; electrostatic discharge may damage minute semiconductor structures; this risk can be reduced by maintaining an appropriate temperature;
in this embodiment, during the process of adsorbing or clamping a part of the semiconductor material, better adsorption characteristics may be exhibited at a specific temperature; for example, the surface roughness of certain semiconductor materials may vary with temperature, thereby affecting the adsorption performance;
the control of the temperature can avoid condensation or other chemical reactions on the surface of the chip or wafer, thereby reducing potential surface contamination, which is particularly critical in micro-nano scale semiconductor processing;
small changes in temperature may result in small changes in wafer dimensions; by maintaining a stable temperature, dimensional stability of the wafer during the adsorption process can be ensured;
during semiconductor processing, there may be residual chemicals on the wafer; by adjusting the temperature, the volatilization of the chemical substances can be quickened, and the influence of the chemical substances on the adsorption effect is reduced;
optionally, the evaluation unit acquires the state data of the electrostatic chuck 4 of the silicon nitride electrostatic chuck sensed by the sensing module, the temperature data of the electrostatic chuck 4 of the silicon nitride electrostatic chuck adjusted by the temperature Control module, and the weight and position parameters of the adsorbate, and calculates the Control index Control of the electrostatic chuck 4 of the silicon nitride according to the following formula:
wherein a, b, c are weight coefficients, the values of which are set by an operator or a system and satisfy: a+b+c=1, e data E, real-time electric field intensity data of the silicon nitride electrostatic chuck max The maximum electric field intensity value which can be generated by the silicon nitride electrostatic chuck is set by a system (corresponding to a known value), W data For the weight data of the adsorbate, the weight data is set by an operator according to the actual condition of the adsorbate, W max For maximum weight of adsorbate, the value is determined according to the type of silicon nitride electrostatic chuck (corresponding to a known value), T 0 The value of the reference value is determined by a system according to the adsorption or use scene (corresponding to a known value), T is the surface temperature regulation index of the silicon nitride electrostatic chuck, and the value of the reference value is determined by a temperature analysis unit;
the evaluation unit transmits the evaluation result to an electric field control unit, and controls the electric field intensity of the silicon nitride electrostatic chuck through the electric field control unit;
in this embodiment, the temperature control module and the electric field adjusting module are matched with each other, so that the silicon nitride electrostatic chuck is more stable and reliable in the process of adsorbing or clamping the adsorbate, and the defect that the adsorption state is unreliable due to overlarge temperature change of the silicon nitride electrostatic chuck is overcome;
in addition, the temperature control module and the electric field adjusting module are matched with each other, so that the silicon nitride electrostatic chuck has better effect, the adsorption quality of the silicon nitride electrostatic chuck is improved, the quality of the surface of an adsorbate is prevented from being damaged to the greatest extent, and the silicon nitride electrostatic chuck has the advantages of high adsorption force control precision and good interaction performance;
optionally, the temperature analysis unit calculates the surface temperature adjustment index T of the silicon nitride electrostatic chuck according to the following formula:
wherein alpha and beta are empirical coefficients, the values of which are empirically obtained, ra is the humidity of the environment, and A is set by an operator according to actual conditions c The effective adsorption area of the adsorbate is directly determined by the adsorption area of the adsorbate and the adsorption position of the silicon nitride electrostatic chuck;
optionally, the electric field control unit calculates the electric field control intensity value E of the silicon nitride electrostatic chuck according to the following formula s ：
Wherein Control is a Control index of the silicon nitride electrostatic chuck, k is a calibration coefficient, and the values thereof are fitted by historical data, such as by a least square method or other methods, which are known to those skilled in the art, and those skilled in the art can query related technical manuals to obtain the technology, so that the description thereof is omitted in this embodiment;
the electric field control unit controls the intensity value E according to the electric field s Controlling the electric field of the silicon nitride electrostatic chuck to maintain stable adsorption of adsorbates;
optionally, the electric field control unit includes an actuator 1 and a feedback detection member, and the actuator 1 receives the analyzed electric field intensity value E s The feedback detection component monitors the actual effect after the electric field intensity is regulated, compares the actual effect with the expected effect, if deviation exists, feeds back the actual effect to the evaluation unit for further evaluation, and recalculates the electric field control intensity value of the silicon nitride electrostatic chuck 4 according to the evaluation result and readjusts the electric field intensity;
optionally, the control flow of the electric field adjusting module includes:
s1, a data calling unit acquires necessary data from an induction module and a temperature control module in real time and stores the necessary data in a data buffer;
s2, the evaluation unit takes out data from the data cache module periodically or according to the need, and evaluates the Control index Control of the silicon nitride electrostatic chuck 4;
s3, the electric field control unit acquires the evaluation result of the evaluation unit and analyzes the electric field control intensity value E of the silicon nitride electrostatic chuck 4 s And controlling the electric field to be a strength value E s Converted into control instructions and transmitted to the executor 1;
s4, the actuator 1 adjusts the electric field intensity of the silicon nitride electrostatic chuck 4 according to the received control instruction, and monitors the actual effect through a feedback detection component;
in this embodiment, a feedback flow of the feedback detection means is provided:
s11, setting target electric field intensity, namely firstly, calculating the target electric field intensity of the silicon nitride electrostatic chuck 4 by a central control unit or other related modules;
s12, the actuator 1 acts, namely the actuator 1 adjusts the electric field intensity of the silicon nitride electrostatic chuck 4 according to the received control instruction;
s13, monitoring in real time, wherein the induction module continuously monitors the electric field intensity of each region of the silicon nitride electrostatic chuck 4 in real time;
s14, data collection and transmission, namely transmitting the electric field intensity data collected in real time to a central processing unit;
s15, comparing and analyzing that the CPU compares the real-time electric field intensity with the preset target electric field intensity to calculate the deviation;
s16, feeding back that if the deviation exceeds a preset tolerance range (the tolerance range is set by the system according to actual conditions), the central processing unit sends a new control instruction to the actuator 1 to require corresponding adjustment; this forms a closed loop control system to ensure that the electric field strength of the silicon nitride electrostatic chuck 4 is always within the target range;
through the mutual cooperation of the data calling unit, the evaluation unit and the electric field control unit, the adsorption state of the silicon nitride electrostatic chuck 4 can be accurately controlled, the adsorption control precision of the silicon nitride electrostatic chuck 4 is improved, the surface quality of an adsorbate is protected, and the intelligent silicon nitride electrostatic chuck has the advantages of being accurate in control precision and high in intelligent degree.
Embodiment two: this embodiment should be understood to include all the features of any one of the foregoing embodiments and be further modified on the basis thereof, as shown in fig. 1, 2, 3, 4, 5, 6, 7, 8, and 9, further in that the electric field adjusting module further includes a balance analyzing unit that samples an electrostatic field of the surface of the silicon nitride electrostatic chuck 4 and a sampling unit that analyzes the silicon nitride electrostatic chuck 4 according to data sampled by the sampling unit;
wherein the acquisition unit is arranged on the silicon nitride electrostatic chuck 4;
as shown in fig. 7, 8 and 9, the sampling unit includes a high-precision electrostatic sensor array 6 and a third data collector, the electrostatic sensor array 6 covers the surface of the silicon nitride electrostatic chuck 4, each sensor is responsible for detecting the electrostatic field in a specific area covered by the sensor, and the third data collector collects and stores the electrostatic field data detected by the electrostatic sensor array 6;
the sampling steps of the sampling unit are as follows:
s21, dividing areas: dividing the surface of the silicon nitride electrostatic chuck 4 into a plurality of equal-sized or unequal-sized regions; the size and shape of the region can be determined according to the shape and size of the adsorbent and the actual application requirement, and the high-precision electrostatic sensor array 6 is distributed in the divided region;
s22, static data collection: detecting electrostatic field data of each region in real time using the electrostatic sensor array 6 of high accuracy;
s23, data processing, namely transmitting the electrostatic data of each area to a central control unit and performing preliminary processing such as denoising, smoothing and the like, which are technical means well known to those skilled in the art, so that in the embodiment, the electrostatic data are not repeated one by one;
s24, transmitting the data after data processing to the balance analysis unit; the Balance analysis unit acquires the electrostatic field data processed by the sampling unit, and calculates an electrostatic Balance index Balance according to the following formula:
wherein E is i The static intensity data obtained by sampling the ith area of the static sensor array is that N is the total number of the set sampling areas, E target For the target electric field strength E max The maximum electric field intensity value which can be generated by the silicon nitride electrostatic chuck is set by a system (corresponding to a known value);
after the Balance analysis unit calculates the electrostatic Balance index Balance, the electric field control unit adjusts the electric field intensity of each region in real time according to the calculated electrostatic Balance index Balance so as to be as close to the target value as possible;
the firm adsorption connection between the silicon nitride electrostatic chuck and the adsorbate is critical; unstable electrostatic equilibrium may cause movement or shedding of adsorbate, resulting in product damage or errors in the manufacturing process;
the electric field control unit adjusts the electric field intensity of each area in real time according to the following steps:
s31, obtaining static Balance states of all areas through a sampling unit, and then sending the state data to a Balance analysis unit to calculate a static Balance index Balance;
s32, the electric field control unit compares the obtained electrostatic Balance index Basance with a preset target value, wherein the target value is possibly set based on experience or a specific application scene, and the target value is set by the specific application scene, so that the electrostatic Balance index Basance is not repeated here;
s33, based on the difference between the static balance index and the target value, the electric field control unit calculates a necessary electric field adjustment value; for example, if an index of a region is below a target value, the region may need to increase the electric field strength;
wherein the determination of the electric field adjustment value depends on a number of factors including the difference between the electrostatic balance index and the target value, the sensitivity of the electric field strength to the electrostatic balance index, and the characteristics of the respective regions;
in addition, the target value in this embodiment is set by the system according to the actual situation, which is a technical means well known to those skilled in the art, and those skilled in the art can query the related technical manual to obtain the technology, so that the description is omitted in this embodiment;
due to the changes of various conditions (such as different materials, the size or shape of adsorbates, etc.) in the semiconductor manufacturing process, the electric field control unit can adapt to the changes in real time, so that the optimal state is ensured in each adsorption process;
in this embodiment, the electric field intensity Δe to be adjusted in the i-th region is calculated according to the following formula:
ΔE＝λ×(I target -I)；
wherein Balance is the current electrostatic Balance index, I target For the target electrostatic balance index, its value is set by the system according to the actual situation, λ is a positive adjustment coefficient that determines the speed or sensitivity of the electric field strength adjustment, where the adjustment coefficient λ determines the magnitude of the electric field strength adjustment, and it is set by the system or operator according to the actual situation, for example, according to experimental data or simulation results, selecting an appropriate value;
if the current electrostatic Balance index Balance is lower than I target Then Δe is positive, meaning we need to increase the electric field strength;
if the current electrostatic Balance index Balance is higher than I target Then Δe is negative, meaning we need to reduce the electric field strength;
the adjusted electric field strength E i new The method comprises the following steps:
wherein E is i The method comprises the steps that electrostatic intensity data obtained by sampling an ith area of an electrostatic sensor array are sampled, and delta E is an electric field intensity value required to be adjusted in the ith area;
therefore, the electric field intensity of each region can be quickly adjusted according to the electrostatic balance index monitored in real time and the difference between the electrostatic balance index and the target value, so that the electrostatic balance index reaches an ideal state as soon as possible;
s34, electric field adjustment is applied: the electric field control unit guides the actuator to adjust the electric field intensity in real time for each region; this may be achieved by altering the output of the power supply or adjusting the operating parameters of the electric field generating means;
s35, feedback and fine adjustment: after the electric field is adjusted, the induction module can detect a new static balance state again and feed back the result to the electric field control unit; if the new result approaches or reaches the target value, the adjustment process is stopped; otherwise, the electric field control unit continues to finely adjust the electric field until the condition is met;
through the cooperation among the electric field control unit, the balance analysis unit and the sampling unit, the silicon nitride electrostatic chuck can ensure the safety of the adsorption process, and meanwhile, the automatic adjustment of the electric field strength means that the system can reach an ideal electrostatic balance state more quickly without manual intervention or multiple adjustments, so that the overall production efficiency is improved, the whole system adapts to changes in real time, the optimal state of each adsorption process is ensured, the influence of human factors is reduced by the automatic electric field adjustment of the whole system, and a more stable and reliable working environment is provided;
through the self-adaptive adjustment mechanism, the electric field control unit can ensure that the optimal static balance state is always kept between the silicon nitride static sucker and the adsorbate, so that the stability and the efficiency of the production process are ensured.
The foregoing disclosure is only a preferred embodiment of the present invention and is not intended to limit the scope of the invention, so that all equivalent technical changes made by applying the description of the present invention and the accompanying drawings are included in the scope of the present invention, and in addition, elements in the present invention can be updated as the technology develops.
Claims (4)
1. An automatic control system of a silicon nitride electrostatic chuck comprises a server and an object to be adsorbed, and is characterized by further comprising an induction module, a temperature control module and an electric field adjusting module, wherein the server is respectively connected with the induction module, the temperature control module and the electric field adjusting module;
the sensing module detects state data of the silicon nitride electrostatic chuck in real time, the temperature control module adjusts temperature data of the silicon nitride electrostatic chuck according to the state data of the sensing module, the electric field adjusting module evaluates the adsorption of the silicon nitride electrostatic chuck according to the state data of the silicon nitride electrostatic chuck, the temperature data of the silicon nitride electrostatic chuck and the weight data of adsorbate which are sensed by the sensing module to form an evaluation result, and the electric field intensity is automatically adjusted according to the evaluation result;
the electric field adjusting module comprises a data calling unit, an evaluating unit and an electric field control unit, wherein the data calling unit calls state data of the electrostatic chuck, temperature data of the silicon nitride electrostatic chuck and the weight of an adsorbate, which are obtained by sensing by the sensing module, and the temperature data of the silicon nitride electrostatic chuck and the weight data of the adsorbate, the evaluating unit evaluates the adsorption of the silicon nitride electrostatic chuck according to the state data of the silicon nitride electrostatic chuck, the temperature data of the silicon nitride electrostatic chuck and the weight data of the adsorbate, which are obtained by sensing by the sensing module, and the electric field control unit controls the electric field intensity of the silicon nitride electrostatic chuck according to the evaluation result of the evaluating unit;
the temperature control module comprises a temperature analysis unit and a temperature control unit, the temperature analysis unit obtains state data detected by the sensing module to analyze the temperature of the silicon nitride electrostatic chuck, and the temperature control unit controls the temperature of the silicon nitride electrostatic chuck according to the temperature analysis unit;
wherein the temperature control unit controls different temperatures for different adsorbates;
the evaluation unit acquires state data of the silicon nitride electrostatic chuck obtained by sensing by the sensing module, temperature data of the silicon nitride electrostatic chuck regulated by the temperature Control module, weight and position parameters of an adsorbate, and calculates a Control index Control of the silicon nitride electrostatic chuck according to the following formula:
；
wherein a, b, c are weight coefficients, the values of which are set by an operator or a system and satisfy: a+b+c=1, e data E, real-time electric field intensity data of the silicon nitride electrostatic chuck max Is the maximum electric field intensity value, W, which can be generated by the silicon nitride electrostatic chuck data For the weight data of the adsorbate, the weight data is set by an operator according to the actual condition of the adsorbate, W max For maximum weight of adsorbate, its value is determined according to the type of silicon nitride electrostatic chuck, T 0 T is the surface temperature regulation index of the silicon nitride electrostatic chuck, and the value of the temperature regulation index is determined by a temperature analysis unit;
the evaluation unit transmits the evaluation result to an electric field control unit, and controls the electric field intensity of the silicon nitride electrostatic chuck through the electric field control unit;
the temperature analysis unit calculates a surface temperature adjustment index T of the silicon nitride electrostatic chuck according to the following formula:
；
wherein alpha and beta are empirical coefficients, the value of the empirical coefficients is obtained empirically, ra is the humidity of the environment, the value is set by an operator according to actual conditions, ac is the effective adsorption area of the adsorbate, and the value of the effective adsorption area is directly determined by the areas of the adsorbate and the adsorption position of the silicon nitride electrostatic chuck;
the electric field control unit calculates an electric field control intensity value E of the silicon nitride electrostatic chuck according to the following formula s ：
；
Wherein, control is the Control index of the silicon nitride electrostatic chuck, k is a calibration coefficient, and the value of k is fitted by historical data;
the electric field control unit controls the intensity value E according to the electric field s The electric field of the silicon nitride electrostatic chuck is controlled to maintain stable adsorption of adsorbates.
2. The automated control system of a silicon nitride electrostatic chuck of claim 1, wherein the sensing module comprises a sensing unit and a memory, the sensing unit is configured to collect status data of the silicon nitride electrostatic chuck, and the memory stores the status data collected by the sensing unit;
the sensing unit comprises a temperature detection member and an electric field intensity detection member, wherein the temperature detection member detects temperature data of the silicon nitride electrostatic chuck, and the electric field intensity detection member detects electric field intensity of the silicon nitride electrostatic chuck;
the temperature detection component is embedded into the surface or the inside of the sucker, and the electric field strength detection component is arranged around the silicon nitride electrostatic sucker;
wherein the status data includes temperature and electric field strength.
3. The automated control system of a silicon nitride electrostatic chuck of claim 2, wherein the electric field control unit comprises an actuator and a feedback detection member, the actuator receiving the analyzed electric field strength value E s The feedback detection means monitors the actual effect after the electric field intensity is adjusted and compares with the expected effect, if there is a deviation, the feedback detection means feeds back to the evaluation unit to further evaluate and recalculates the electric field control of the silicon nitride electrostatic chuck based on the evaluation resultIntensity values and readjustment of the electric field intensity are performed.
4. The automated control system of a silicon nitride electrostatic chuck of claim 3, wherein the control flow of the electric field regulation module comprises:
s1, a data calling unit acquires necessary data from an induction module and a temperature control module in real time and stores the necessary data in a data buffer;
s2, the evaluation unit takes out data from the data cache module periodically or according to the need, and evaluates the Control index Control of the silicon nitride electrostatic chuck;
s3, the electric field control unit acquires an evaluation result of the evaluation unit and analyzes an electric field control intensity value E of the silicon nitride electrostatic chuck s And controlling the electric field to be a strength value E s Converting the control command into a control command and transmitting the control command to an executor;
and S4, the actuator adjusts the electric field intensity of the silicon nitride electrostatic chuck according to the received control instruction, and monitors the actual effect through a feedback detection component.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002190512A (en) * | 2000-10-11 | 2002-07-05 | National Institute Of Advanced Industrial & Technology | Electrostatic chuck and its manufacturing method |
| CN114068385A (en) * | 2021-11-15 | 2022-02-18 | 华科电子股份有限公司 | Control method applied to electrostatic chuck of etching machine and power supply |
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|---|---|---|---|---|
| JP2002190512A (en) * | 2000-10-11 | 2002-07-05 | National Institute Of Advanced Industrial & Technology | Electrostatic chuck and its manufacturing method |
| JP4201502B2 (en) * | 2000-10-11 | 2008-12-24 | 独立行政法人産業技術総合研究所 | Electrostatic chuck and manufacturing method thereof |
| CN114068385A (en) * | 2021-11-15 | 2022-02-18 | 华科电子股份有限公司 | Control method applied to electrostatic chuck of etching machine and power supply |
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| Title |
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| 等离子体刻蚀机静电吸盘温度控制方法仿真研究;张泽明;黄利平;赵继丛;田凌;;真空科学与技术学报;20151015(第10期);全文 * |
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