CN117075433A - Method for checking lens deformation defect of photoetching machine by using test mask plate - Google Patents

Method for checking lens deformation defect of photoetching machine by using test mask plate Download PDF

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Publication number
CN117075433A
CN117075433A CN202310818864.3A CN202310818864A CN117075433A CN 117075433 A CN117075433 A CN 117075433A CN 202310818864 A CN202310818864 A CN 202310818864A CN 117075433 A CN117075433 A CN 117075433A
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CN
China
Prior art keywords
test mask
alignment mark
mask
test
alignment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310818864.3A
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Chinese (zh)
Inventor
王俊峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gmc Semitech Co ltd
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Gmc Semitech Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gmc Semitech Co ltd filed Critical Gmc Semitech Co ltd
Priority to CN202310818864.3A priority Critical patent/CN117075433A/en
Publication of CN117075433A publication Critical patent/CN117075433A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/18—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge using photoelastic elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0207—Details of measuring devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Multimedia (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The invention discloses a method for checking deformation defects of a lens of a photoetching machine by using a test mask, and relates to the technical field of overhauling and calibrating of photoetching machines. 6 groups of alignment marks are additionally arranged on the adopted test mask, and the total number of the alignment marks is 8, so that 90-degree and 180-degree rotation of the test mask can be realized. The test mask plate is subjected to exposure to the wafer twice at 0 degrees and 90 degrees, the distortion positions of the exposure before and after the exposure are analyzed, and if the positions are relatively the same, the defects of the mask plate are tested, and the defects of a lens are eliminated; if the distortion positions are different, the lens distortion problem is considered.

Description

Method for checking lens deformation defect of photoetching machine by using test mask plate
Technical Field
The invention relates to the technical field of lithography machines, in particular to a lithography machine overhaul and calibration technology.
Background
A lithographic apparatus is a critical device for the manufacture of integrated circuits and other micro-nano devices. The chip design pattern is transferred onto photoresist or photoetching film by utilizing optical technology, and then the pattern is transferred onto the surface of the chip by a chemical or physical method to form a fine circuit structure.
The lens system is an important component of a lithographic apparatus that is primarily used to focus the light beam generated by the light source onto the photoresist surface to form the desired pattern. After a period of use, the lens may also distort, resulting in distortion of the image, requiring inspection calibration. The existing calibration method is to expose a wafer by using a test mask, wherein the test mask is shown in fig. 1, the test mask is mounted with a mask carrying table through an alignment mark, and whether a lens is distorted is judged by analyzing abnormal pattern data after exposure, however, when the test mask has a problem, the pattern is possibly distorted, and the analysis result is affected. And only one group of alignment marks is provided, and when the mask plate rotates, the alignment cannot be performed.
Disclosure of Invention
The invention aims to provide a method for overhauling and calibrating a lens system of a photoetching machine, which eliminates the influence of defects of a test mask.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a method for checking lens deformation defect of lithography machine by using test mask,
the test mask comprises a frame, a pattern area is arranged in the frame, at least four alignment mark sets are arranged on the frame and used for aligning the test mask with a mask bearing table, the alignment mark in each alignment mark set is of a mirror symmetry structure, a symmetry axis passes through the center of the test mask, and adjacent alignment mark sets can be overlapped after rotating around the center of the mask by 90 degrees or 270 degrees.
The inspection method comprises the following steps:
step one, mounting a test mask on a mask bearing table, and realizing alignment positioning of the test mask and the mask by using an alignment mark set;
after alignment, exposing the detection wafer by adopting a lens to be inspected and a test mask plate, and recording the distortion position of the pattern on the detection wafer;
step three, rotating the test mask plate by 90 degrees or 270 degrees, and aligning and positioning the test mask plate and the test mask plate again by using the alignment mark set;
step four, after alignment, exposure is carried out again, and the distortion position of the pattern on the wafer is recorded and detected;
fifthly, analyzing the front and back exposure distortion positions, and if the positions are relatively the same, testing the defects of the mask plate and eliminating the defects of the lens; if the distortion positions are different, the lens distortion problem is considered.
Further, the number of the alignment mark sets is four, each alignment mark set comprises two groups of alignment marks, mirror symmetry structures are arranged between the two groups of alignment marks in the alignment mark sets, and a symmetry axis passes through the center of the test mask; each set of alignment marks matches an alignment mark on the reticle stage.
Further, after the first exposure is completed, the wafer table moves the wafer so that the next area enters the exposure field for the second exposure.
Further, the shape and the actual size of the exposed pattern are measured by a scanning electron microscope and compared with the designed pattern; if the measurement result has obvious deviation from the design requirement, the pattern is judged to have distortion.
Drawings
FIG. 1 is a schematic diagram of a prior art test reticle;
FIG. 2 is a schematic diagram of a test reticle of the present invention;
FIG. 3 is a pattern shape contrast diagram of two exposures;
fig. 4 is a pattern shape contrast diagram of two exposures.
Detailed Description
The test mask used in the invention is shown in fig. 2, and comprises a frame which mainly plays a role in fixing. A pattern area is arranged in the frame and used for generating an exposed pattern. Four alignment mark sets are arranged on the frame or at the outer edge of the pattern area, and are used for testing alignment between the mask plate and the mask bearing plate table. The alignment marks of a lithographic reticle typically take the form of a combination of several shapes:
cross alignment marks: the cross-shaped alignment mark is the most common shape, consisting of two perpendicularly intersecting lines.
T-shaped alignment mark: t-shaped alignment marks are also common shapes, consisting of a vertical line and a horizontal line.
Circular alignment marks: the circular alignment mark is a circular shape.
Each alignment mark set comprises two groups of alignment marks, mirror symmetry structures are arranged between the two groups of alignment marks in the alignment mark sets, and symmetry axes pass through the center of the test mask; each set of alignment marks matches an alignment mark on the reticle stage. Adjacent sets of alignment marks are rotated 90 or 270 around the center of the reticle and then registered. The test mask is provided with 8 alignment marks in total, so that 90 DEG and 180 DEG rotation of the mask can be realized.
The distortion judging method of the lens system is as follows:
step one, mounting a test mask on a mask bearing table, and utilizing an alignment mark set to realize alignment positioning of the test mask and the mask, wherein the test mask is required to be aligned with a wafer again after being mounted.
And step two, after alignment, exposing the detection wafer by adopting a lens to be inspected and a test mask plate, and recording the distortion position of the pattern on the detection wafer. After the exposure is completed, the wafer table may be moved a step distance to allow the next area of the wafer to enter the exposure field for a second exposure. The two exposures may also be between adjacent levels of the wafer.
Step three, rotating the test mask plate by 90 degrees or 270 degrees, and aligning and positioning the test mask plate and the test mask plate again by using the alignment mark set;
step four, after alignment, exposure is carried out again, and the distortion position of the pattern on the wafer is recorded and detected;
analyzing the distortion positions on the patterns after the front and back exposure, and if the positions are relatively the same, correspondingly rotating the distortion positions along with the patterns, wherein the distortion positions are used for testing defects of the mask plate and eliminating lens defects as shown in fig. 3; if the distortion positions are different, the distortion positions do not rotate along with the mask,
as shown in fig. 4, the lens distortion problem is considered.
For distortion of the lens system, a scanning electron microscope can be used to measure the shape and actual size of the exposed pattern and compare it with the design pattern; if the measurement result has obvious deviation from the design requirement, the pattern is judged to have distortion.
According to the invention, the alignment mark is additionally arranged on the test mask, so that the test mask can be rotated and aligned, and the influence of the mask can be eliminated through two-time measurement, comparison and analysis of 0-90 degrees, so that the defect of the lens system can be accurately judged.

Claims (4)

1. A method for checking lens deformation defect of lithography machine by using test mask,
the test mask comprises a frame, a pattern area is arranged in the frame, at least four alignment mark sets are arranged on the frame and used for aligning the test mask with a mask bearing table, the alignment mark in each alignment mark set is of a mirror symmetry structure, a symmetry axis passes through the center of the test mask, and adjacent alignment mark sets can be overlapped after rotating around the center of the mask by 90 degrees or 270 degrees.
The inspection method comprises the following steps:
step one, mounting a test mask on a mask bearing table, and realizing alignment positioning of the test mask and the mask by using an alignment mark set;
after alignment, exposing the detection wafer by adopting a lens to be inspected and a test mask plate, and recording the distortion position of the pattern on the detection wafer;
step three, rotating the test mask plate by 90 degrees or 270 degrees, and aligning and positioning the test mask plate and the test mask plate again by using the alignment mark set;
step four, after alignment, exposure is carried out again, and the distortion position of the pattern on the wafer is recorded and detected;
fifthly, analyzing the front and back exposure distortion positions, and if the positions are relatively the same, testing the defects of the mask plate and eliminating the defects of the lens; if the distortion positions are different, the lens distortion problem is considered.
2. The method for inspecting a lithography machine for lens deformation defects using a test reticle of claim 1, wherein: the number of the alignment mark sets is four, each alignment mark set comprises two groups of alignment marks, mirror symmetry structures are arranged between the two groups of alignment marks in the alignment mark sets, and a symmetry axis passes through the center of the test mask; each set of alignment marks matches an alignment mark on the reticle stage.
3. The method for inspecting a lithography machine for lens deformation defects using a test reticle according to claim 1 or 2, wherein: after the first exposure is completed, the wafer table moves the wafer so that the next area enters the exposure field for the second exposure.
4. The method for inspecting a lithography machine for lens deformation defects using a test reticle of claim 1, wherein: measuring the shape and the actual size of the exposed pattern by using a scanning electron microscope, and comparing the pattern with the designed pattern; if the measurement result has obvious deviation from the design requirement, the pattern is judged to have distortion.
CN202310818864.3A 2023-07-05 2023-07-05 Method for checking lens deformation defect of photoetching machine by using test mask plate Pending CN117075433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310818864.3A CN117075433A (en) 2023-07-05 2023-07-05 Method for checking lens deformation defect of photoetching machine by using test mask plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310818864.3A CN117075433A (en) 2023-07-05 2023-07-05 Method for checking lens deformation defect of photoetching machine by using test mask plate

Publications (1)

Publication Number Publication Date
CN117075433A true CN117075433A (en) 2023-11-17

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Country Status (1)

Country Link
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Address after: No. 1 Jingxiang Road, Xibei Town, Xishan District, Wuxi City, Jiangsu Province, 214000

Applicant after: Jimsi Semiconductor Technology (Wuxi) Co.,Ltd.

Address before: No. 45 and 51, Yougu Industrial Park, Xibei Town, Xishan District, Wuxi City, Jiangsu Province, 214000

Applicant before: GMC SEMITECH Co.,Ltd.