CN117059528A - Wafer stripping device - Google Patents
Wafer stripping device Download PDFInfo
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- CN117059528A CN117059528A CN202311303492.7A CN202311303492A CN117059528A CN 117059528 A CN117059528 A CN 117059528A CN 202311303492 A CN202311303492 A CN 202311303492A CN 117059528 A CN117059528 A CN 117059528A
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- 235000012431 wafers Nutrition 0.000 claims abstract description 144
- 239000007788 liquid Substances 0.000 claims abstract description 95
- 230000001276 controlling effect Effects 0.000 claims abstract description 26
- 230000001105 regulatory effect Effects 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims description 50
- 238000000926 separation method Methods 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 38
- 230000006698 induction Effects 0.000 claims description 21
- 238000012986 modification Methods 0.000 claims description 20
- 230000004048 modification Effects 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 19
- 230000004044 response Effects 0.000 claims description 7
- 230000001939 inductive effect Effects 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 13
- 238000012545 processing Methods 0.000 abstract description 7
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- 239000004065 semiconductor Substances 0.000 abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
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- 238000006467 substitution reaction Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the technical field of semiconductor processing, in particular to a wafer stripping device, which comprises: a pressure vessel, an ingot holding unit, a peeling unit, a pressure adjusting unit, a detecting unit, and a peeling control unit; the pressure vessel provides a closed pressure environment for the modified ingot, the ingot holding unit fixes the position of the modified ingot and exposes the stripping end face of the modified ingot, the whole modified ingot is heated, the stripping unit drives the stripping end face and the modified ingot to generate radial separating force to separate wafers from the modified ingot, the pressure regulating unit controls the pressure of liquid medium in the pressure vessel, the detecting unit detects the temperature of the stripping end face of the ingot and the thickness of the stripped wafers, and the stripping control unit is used for regulating and controlling various parameters of the wafer stripping process.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a wafer stripping device.
Background
Silicon carbide is a core material for the fabrication of wide bandgap semiconductor devices. The SiC (silicon carbide) device has the advantages of high frequency, high power, high temperature resistance, radiation resistance, interference resistance, small volume, light weight and the like, is incomparable with the existing semiconductor materials such as silicon, gallium arsenide and the like, and has very broad application prospect. Silicon carbide materials are key materials required by the development of core devices, and cannot be popularized and applied on a large scale due to the large processing difficulty. In the silicon carbide ingot slicing procedure, the silicon carbide ingot is processed into a silicon carbide wafer through procedures such as cutting, flooding, polishing, CMP (chemical mechanical polishing) polishing and the like, so that the surface condition of the silicon carbide wafer meets the requirement of a subsequent epitaxial growth link. Silicon carbide ingot cutting currently has two conventional techniques, wire cutting and laser machining. For large-size silicon carbide wafers, the laser processing technology is 3-5 times of the linear cutting efficiency, and the larger the diameter size is, the more obvious the efficiency is improved. Meanwhile, due to the characteristics of laser processing, the material loss is obviously reduced, and the yield is improved.
Currently, double laser beam cutting is adopted for slicing silicon carbide crystal ingots, namely, a beam of laser is firstly used for incidence to a position of a depth layer from the end face of the silicon carbide crystal ingot, explosion point scanning is carried out on the depth layer, and a modified layer is formed on the depth layer; and then a beam of laser is used for incidence to the position of the modified layer from the end face of the silicon carbide ingot, and the modified layer is heated and scanned, so that crack growth is controlled until cracking occurs. According to the processing method, two lasers are needed to be used successively, each laser needs to be incident to a certain depth layer through the end face of the silicon carbide ingot, and then the depth layer is subjected to multiple explosion point heating and scanning, so that the whole modified layer can be formed and heated only along a complex scanning route with a far track, and the processing efficiency is low. Meanwhile, two complex scanning systems are needed to control the scanning of two laser beams respectively, so that the complexity of the laser equipment is high and the processing cost is high.
Chinese patent publication No.: CN109382921a discloses a method for producing a silicon wafer, which comprises the following steps: a ingot generation step of cutting a silicon ingot to generate a ingot; a flattening step of grinding and flattening an end face of the ingot; a separation layer forming step of positioning a converging point of laser beam having a wavelength that is transparent to silicon in a depth of an end surface of the ingot corresponding to a thickness of a wafer to be formed, and irradiating the ingot with the laser beam to form a separation layer; and a wafer generating step of separating the silicon wafer to be generated from the separation layer; from this, it can be seen that the method for producing a silicon wafer has the following problems: the wafer thickness uniformity is poor due to the uncontrollable wafer separation path after partial position modification of the laser-induced wafer.
Disclosure of Invention
Therefore, the invention provides a wafer stripping device, which is used for solving the problem of uneven wafer thickness caused by uncontrollable wafer separation paths after partial position modification of a laser-induced wafer in the prior art.
In order to achieve the above object, the present invention provides a wafer peeling apparatus comprising:
a pressure vessel filled with a liquid medium therein for providing a closed pressure environment for the modified ingot;
an ingot holding unit for vertically placing an axial direction of the modified ingot to be stripped in a pressure vessel to fix a position of the modified ingot and expose a stripped end face of the modified ingot, and heating the modified ingot as a whole to a set temperature;
a peeling unit disposed above the peeling end surface of the modified ingot for cooling a set position of the peeling end surface of the modified ingot to generate a separation point and a separation path by inducing a wafer by a temperature difference, and for generating a radial separation force by driving the peeling end surface and the modified ingot to separate the wafer from the modified ingot;
a pressure regulating unit connected with the pressure vessel for controlling the pressure of the liquid medium in the pressure vessel;
a detecting unit for detecting a temperature of a peeled end surface of the ingot and a thickness of the peeled wafer;
the stripping control unit is respectively connected with the pressure container, the ingot holding unit, the stripping unit and the pressure regulating unit and is used for determining the first cooling temperature of the liquid medium according to the heating temperature of the stripping end surface on the ingot holding unit and the diameter of the stripping end surface, determining the stripping mode of the wafer according to the temperature of the stripping end surface cooled by the liquid medium and the heating temperature of the stripping end surface, and determining the pressure value of the liquid medium in the pressure container according to the comparison result of the diameter of the stripping end surface and the standard diameter corresponding to the preset pressure;
wherein the modified ingot is an ingot after laser modification.
Further, the stripping unit comprises a force application component for driving the stripping end surface and the modified ingot to generate radial separation force, and the force application component is fixedly connected with the stripping end surface to drive the stripping end surface and the modified ingot body to generate radial separation force, wherein:
the force application component can be directly and fixedly connected with the stripping end face or fixedly connected with the stripping end face through an intermediate medium.
Further, the peeling unit further includes:
the power assembly is connected with the force application assembly and is used for driving the force application assembly to move upwards by providing radial force so as to enable the stripping end face and the modified ingot main body to generate radial separation force;
and the cooling component is connected with the pressure container and is used for inputting the cooled/warmed liquid medium into the pressure container.
Further, the stripping control unit determines the first cooling temperature of the liquid medium according to the heating temperature of the stripping end face on the ingot holding unit and the diameter of the stripping end face;
the difference value between the heating temperature of the stripping end face and the first cooling temperature of the liquid medium is larger than or equal to a preset temperature difference value, and the first cooling temperature of the liquid medium and the diameter of the stripping end face are in inverse proportion.
Further, the peeling control unit is provided with a preset peeling mode for peeling the wafer from the peeling end surface after the temperature of the liquid medium is reduced in advance, and the peeling control unit comprises:
and directly controlling the power assembly to strip the wafer, or controlling the cooling assembly to input a liquid medium with the temperature higher than the temperature of the stripping end face into the pressure container to carry out crystal separation induction on the stripping end face and then controlling the power assembly to strip the wafer.
Further, the intermediate medium is a sucker or an adhesive.
Further, the stripping control unit compares the temperature difference between the temperature of the stripped end face cooled by the liquid medium and the heating temperature of the stripped end face with a preset stripping temperature difference standard under a preset first condition to determine the stripping mode of the wafer;
if the temperature difference is larger than a preset stripping temperature difference standard, judging that the stripping end face meets a direct stripping standard and adopting a first preset stripping mode;
if the temperature difference is smaller than or equal to a preset stripping temperature difference standard, judging that the stripping end face does not meet the direct stripping standard and adopting a second preset stripping mode;
the first preset stripping mode is a mode of directly controlling the power assembly to strip wafers, and the second preset stripping mode is a mode of controlling the cooling assembly to input liquid medium with the temperature higher than that of the stripping end face into the pressure container to carry out crystal separation induction on the stripping end face and then controlling the power assembly to strip wafers.
Further, the stripping control unit controls the cooling component to input liquid medium with corresponding temperature into the pressure container under a preset first completion condition, wherein the stripping control unit determines the pressure value of the liquid medium in the pressure container according to the comparison result of the diameter of the stripping end face and the standard diameter corresponding to the preset pressure;
the preset first completion condition is that the corresponding temperature of the liquid medium is ready to be completed.
Further, the stripping control unit determines the heating temperature adjusting mode of the liquid medium with the stripping end surface temperature input into the pressure container by the cooling component according to the ratio of the temperature difference value to the preset stripping temperature difference standard under the second preset stripping mode response condition;
wherein the second preset stripping mode response condition is that the second preset stripping mode is adopted; the adjustment amounts of the heating temperatures are different for the respective adjustment modes.
Further, the peeling control unit adjusts the preset pressure according to a thickness standard corresponding to the modified point and the thickness of the peeled wafer, wherein:
if the thickness of the stripped wafer is greater than the thickness standard corresponding to the modified point, the stripping control unit judges to reduce the preset pressure;
if the thickness of the stripped wafer is smaller than the thickness standard corresponding to the modified point, the stripping control unit judges that the preset pressure is increased;
the reduction or increase of the preset pressure is in a proportional relation with a reference difference value, wherein the reference difference value is the absolute value of the difference value of the thickness standard corresponding to the thickness of the stripped wafer after stripping and the modified point.
Compared with the prior art, the method has the beneficial effects that the crack path is controlled by carrying out temperature and pressure induced cracking on the wafer subjected to laser modification, so that the uniformity of the stripping thickness of the wafer is effectively ensured.
Furthermore, in the wafer stripping device, the stripping unit applies the radial separating force on the stripping end face and the modified crystal ingot main body through the force application component and the power component, and the wafers are separated in the radial direction through the radial separating force, so that the crack extension length of the wafers in the axial direction is effectively controlled, and the thickness fluctuation control qualification rate of the wafer separation is improved.
Furthermore, the stripping control unit in the wafer stripping device determines the first cooling temperature of the liquid medium according to the diameter of the stripping end surface, and the wafer subjected to laser modification is induced to generate cracks at the modification position through temperature difference, so that the success rate of wafer separation is further improved.
Furthermore, the wafer stripping control unit in the wafer stripping device is provided with a plurality of stripping modes for stripping the wafer, wherein the two methods comprise direct stripping and first crystalline separation induction re-stripping, so that the wafer stripping efficiency can be improved, and the effectiveness of the control of the thickness of the stripped wafer is effectively ensured by using the corresponding stripping modes according to different temperature difference induction conditions.
Further, when the second preset stripping mode is adopted, the stripping control unit adjusts the heating temperature of the liquid medium in the reheating process after the stripping end face is cooled, and adjusts the temperature according to the ratio of the temperature difference value to the preset stripping temperature difference standard, so that the crack of the temperature-induced crystal modification position can be effectively generated, and the success rate of wafer separation is improved.
Furthermore, the peeling control unit in the wafer peeling device adjusts the preset pressure according to the thickness of the peeled wafer, thereby adjusting the control condition of the extending direction of the crack in the temperature induction process of the liquid medium to the peeling end surface and ensuring the uniformity of the peeling thickness of the wafer.
Drawings
FIG. 1 is a block diagram of a wafer lift-off apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a wafer lift-off apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view of modifying the crack direction of an ingot in accordance with an embodiment of the present invention;
FIG. 4 is a flow chart of a wafer lift-off method according to an embodiment of the present invention;
in the figure: 1, a pressure vessel; 2, an ingot holding unit; 31, a force application assembly; 32, a power assembly; 33, a cooling component; 4, a pressure regulating unit; 5, a detection unit; 60, stripping the end face; 11, a first crack direction; 12, a second crack direction.
Detailed Description
In order that the objects and advantages of the invention will become more apparent, the invention will be further described with reference to the following examples; it should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are merely for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention.
It should be noted that, in the description of the present invention, terms such as "upper," "lower," "left," "right," "inner," "outer," and the like indicate directions or positional relationships based on the directions or positional relationships shown in the drawings, which are merely for convenience of description, and do not indicate or imply that the apparatus or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, it should be noted that, in the description of the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those skilled in the art according to the specific circumstances.
Referring to fig. 1 and 2, an embodiment of the present invention provides a wafer stripping apparatus, including:
a pressure vessel 1 filled with a liquid medium therein for providing a closed pressure environment for the modified ingot;
an ingot holding unit 2 for vertically placing an axial direction of the modified ingot to be stripped in a pressure vessel to fix a position of the modified ingot and expose a stripped end face of the modified ingot, and heating the modified ingot as a whole to a set temperature;
a peeling unit disposed above the peeling end surface of the modified ingot for cooling a set position of the peeling end surface of the modified ingot to generate a separation point and a separation path by inducing a wafer by a temperature difference, and for generating a radial separation force by driving the peeling end surface and the modified ingot to separate the wafer from the modified ingot;
a pressure regulating unit 4 connected to the pressure vessel for controlling the pressure of the liquid medium in the pressure vessel;
a detecting unit 5 for detecting a temperature of a peeled end face of the ingot and a thickness of the peeled wafer;
the stripping control unit is respectively connected with the pressure unit, the ingot holding unit, the stripping unit and the pressure regulating unit and is used for determining the first cooling temperature of the liquid medium according to the heating temperature of the stripping end surface on the ingot holding unit and the diameter of the stripping end surface, determining the stripping mode of the wafer according to the temperature of the stripping end surface cooled by the liquid medium and the heating temperature of the stripping end surface, and determining the pressure value of the liquid medium in the pressure container according to the comparison result of the diameter of the stripping end surface and the standard diameter corresponding to the preset pressure;
wherein the modified ingot is an ingot after laser modification.
The wafer stripping device is suitable for the ingot after laser modification, and the wafer after laser modification is subjected to temperature and pressure induced cracking to control crack paths, so that the uniformity of the stripping thickness of the wafer is effectively ensured.
The implementation principle of the invention is as follows:
the crystal structure of the ingot after laser modification is changed in the modified layer or the modified position, and cracks are easily generated at the position after stress, so that the wafer can be separated from the ingot, but in general technology, the separation of the wafer from the main body ingot is performed by applying an outward pulling force from the axial direction of the peeling end surface, and the separated wafer has defects including: 1. the separation of the wafer completely depends on the axial stress to generate a breaking point from the modified layer, and then the axial stress is separated from the ingot main body, so that the crack of the breaking point is influenced by the radial drawing force to extend the longitudinal depth of the wafer in the axial direction, the thickness of the wafer at the breaking surface is greatly changed, the thickness is not uniform enough, the thickness consumed in polishing is larger, and the effective use thickness is poor compared with the stripping thickness; 2. in axial separation stress, generally, the wafer is finally separated from the ingot main body at the edge position, so that the edge of the wafer is extremely easy to break and crack in terms of stress analysis, the qualification rate of wafer stripping is reduced, the broken edge exists at the periphery of the edge of the wafer, and the effective use area of the wafer is reduced.
Therefore, the invention adopts the temperature difference combined pressure to induce crack direction and radial stripping technology, and the temperature difference induces the modified layer or modified position of the ingot to generate cracks, compared with the laser to directly induce the cracks, the temperature difference induction is more relaxed, thus the formed cracks have small relative extension length, and the liquid medium is combined to generate a certain degree of pressure on the stripping end face to control the cracks to extend to one side of the stripping end face, thereby ensuring the crystal thickness of one side of the stripping end face, and stripping the wafer by radial force application, further avoiding the axial crack extension, improving the utilization rate of the effective thickness in the stripping of the wafer, and reducing the loss of the ingot caused by the stripping technology.
Specifically, the stripping unit includes a force application component 31 for driving the stripping end surface and the modified ingot to generate a radial separation force, the force application component 31 is fixedly connected with the stripping end surface to drive the stripping end surface and the modified ingot body to generate a radial separation force, wherein:
the force application component 31 can be directly and fixedly connected with the stripping end surface or can be fixedly connected with the stripping end surface through an intermediate medium.
It will be appreciated that in practice, the specific implementation of the force application assembly may be any of those known in the art, so long as it is capable of forming a stable static friction with the stripping end surface, and is not specifically limited herein.
Specifically, the peeling unit further includes:
a power assembly 32 connected to the force application assembly 31 for driving the force application assembly 31 to move upward by providing a radial force to cause the stripping end surface and the modified ingot body to generate a radial separation force;
and a cooling unit 33 connected to the pressure vessel 1 for introducing the cooled/warmed liquid medium into the pressure vessel 1.
In practice, the cooling module 33 according to the embodiment of the present invention includes a temperature adjusting portion capable of heating or cooling a liquid medium and a liquid medium conveying portion for conveying the liquid medium, and is generally conveyed by a liquid pump, so as to facilitate flow rate adjustment and flow velocity adjustment.
In the wafer stripping device, the stripping unit applies radial separating force to the stripping end face and the modified crystal ingot main body through the force application component and the power component, and the wafers are separated in the radial direction through the radial separating force, so that the crack extension length of the wafers in the axial direction is effectively controlled, and the thickness fluctuation control qualification rate of the wafer separation is improved.
Specifically, the stripping control unit determines the first cooling temperature of the liquid medium according to the heating temperature of the stripping end surface on the ingot holding unit and the diameter of the stripping end surface;
the difference value between the heating temperature of the stripping end face and the first cooling temperature of the liquid medium is larger than or equal to a preset temperature difference value, and the first cooling temperature of the liquid medium and the diameter of the stripping end face are in inverse proportion.
In practice, in general, the heating temperature of the peeling end surface takes the highest value of the temperature at which the crystal properties of the ingot material do not change, and the preset temperature difference is determined according to the size change curve of the specific wafer material at each temperature, so that the size change of the wafer under the preset temperature difference exceeds the elastic deformation range of the modified crystal.
It will be appreciated that the larger the diameter of the stripped end surface, the higher the overall temperature enthalpy of the ingot, and the lower the first cooling temperature of the liquid medium required to be used to induce cracking of the modified crystals on the stripped end surface side.
According to the wafer stripping device, the stripping control unit determines the first cooling temperature of the liquid medium according to the diameter of the stripping end face, and the wafer subjected to laser modification is induced to generate cracks at the modification position through temperature difference, so that the success rate of wafer separation is further improved.
Specifically, the peeling control unit is provided with a preset peeling mode for peeling the wafer from the peeling end surface after the temperature of the liquid medium is reduced in advance, and the peeling control unit comprises:
a first preset stripping mode: directly controlling the power assembly to strip the wafer;
a second preset stripping mode: and controlling the cooling component to input a liquid medium with the temperature higher than that of the stripping end face into the pressure container to carry out crystal separation induction on the stripping end face, and then controlling the power component to carry out wafer stripping.
In practice, the predetermined cooling period is determined based on the heat transfer rate of the ingot, and the temperature of the ingot, which is generally set such that the exfoliation end surface extends axially of the ingot to a single piece of the thickness of the exfoliated wafer at most 2 times, is uniform for a period of time, for example, the predetermined cooling period for a 12 inch wafer is generally set to 3 seconds to 6 seconds after the liquid medium is held under pressure.
The two stripping modes provided in this embodiment are different in that whether the crack is generated and extended again through temperature difference induction, and the extended length of the crack can be expanded through secondary temperature difference induction, and on the other hand, when the crack at the modified position cannot be induced through primary cooling, the crack is generated through secondary temperature difference induction, and the crack is gently induced, so that compared with the modification effect of laser, the crack induced by temperature difference is smaller, and the effect of controlling the crack length can be achieved.
Specifically, the intermediate medium is a sucker or an adhesive. The specific implementation form may adopt any structure in the prior art, so long as a stable fixed connection can be formed with the stripping end surface, and no specific limitation is made here.
Specifically, the peeling control unit compares the temperature difference between the temperature of the peeling end face cooled by the liquid medium and the heating temperature of the peeling end face with a preset peeling temperature difference standard under the response condition of a preset first preset peeling mode to determine the peeling mode of the wafer;
if the temperature difference is larger than a preset stripping temperature difference standard, judging that the stripping end face meets a direct stripping standard and adopting a first preset stripping mode;
if the temperature difference is smaller than or equal to a preset stripping temperature difference standard, judging that the stripping end face does not meet the direct stripping standard and adopting a second preset stripping mode;
the first preset stripping mode is a mode of directly controlling the power assembly to strip the wafer, and the second preset stripping mode is a mode of controlling the cooling assembly to input a liquid medium with the temperature higher than the temperature of the stripping end face into the pressure container to carry out crystal separation induction on the stripping end face and then controlling the power assembly to strip the wafer.
According to the invention, the temperature difference between the temperature of the stripping end face and the heating temperature of the stripping end face after the cooling of the liquid medium is judged as the judging parameter of the stripping mode, and the temperature difference can represent the temperature difference change of the ingot and macroscopically represent the characteristic related to the crack induction of the ingot modified layer because of the fact that whether the crack of the ingot modified layer exists or not and the difficulty of the crack length is high and the detection equipment is high, so that the crack condition of the ingot in the modified layer can be intuitively and effectively estimated by taking the temperature difference as the judging parameter of the stripping mode, and the stripping mode can be effectively judged.
In practice, the preset stripping temperature difference criterion may generally be set directly to the preset temperature difference, or slightly greater than the preset temperature difference.
The first preset stripping mode is to judge the separation point and the separation path of the ingot at the modified position under the condition that the temperature difference accords with the stripping temperature difference standard, at the moment, the wafer is directly separated by the force of the stripping unit, the second preset stripping mode is to input a liquid medium with the temperature higher than the temperature of the stripping end face into the pressure container, the temperature of the ingot and the stripping end face is lifted again, the generation of the ingot at the modified position is induced, or after the crack separation point is added at the original crack position and the separation path is prolonged, the wafer is stripped by the force of the stripping unit.
The wafer stripping control unit in the wafer stripping device is provided with a plurality of stripping modes for stripping the wafer, and comprises two methods of direct stripping and first carrying out crystal separation, induction and re-stripping, so that the wafer stripping efficiency can be improved, and the effectiveness of the control of the thickness of the stripped wafer is effectively ensured by using the corresponding stripping modes according to different temperature difference induction conditions.
Specifically, the stripping control unit controls the cooling component to input a liquid medium with corresponding temperature into the pressure container under a preset first completion condition, wherein the stripping control unit determines the pressure value of the liquid medium in the pressure container according to the comparison result of the diameter of the stripping end surface and the standard diameter corresponding to the preset pressure;
the preset first completion condition is that the corresponding temperature of the liquid medium is ready to be completed.
In the implementation, the corresponding temperature of the liquid medium refers to the temperature of the liquid medium which is determined to be input at present, and when the temperature of the liquid medium is reduced for the first time, the temperature of the liquid medium is the calculated temperature of the first time; when the second preset stripping mode is adopted, the temperature of the liquid medium is the heating temperature; the force application assembly is set to be the same as the stripping end surface temperature when the force application assembly applies a radial force to strip.
It can be understood that the standard diameter can be freely set to be a common diameter size according to the use requirement, so that the production and the use are convenient, the wafer separation test is performed for several times by adopting each pressure value under the standard diameter for several times, the pressure value corresponding to one or several optimal crack paths is determined as the reference pressure value corresponding to the standard diameter through microscopic detection and macroscopic stripping, and the pressure value is determined by performing the control variable test on the ingot made of the same material after being modified under the same process and the same parameter.
In the experience of the invention, when the diameter of the stripping end face is larger than the preset pressure, the pressure value range adopted is 1.0-1.2 times of the reference pressure value; when the diameter of the stripping end face is smaller than the preset pressure, the range of the pressure value adopted is 0.8-1.0 times of the reference pressure value.
Specifically, the stripping control unit determines the heating temperature adjustment mode of the liquid medium with the stripping end surface temperature input into the pressure container by the cooling component according to the ratio of the temperature difference value to the preset stripping temperature difference standard under the second preset stripping mode response condition;
the preset second preset stripping mode response condition is that the stripping end face is cooled by the liquid medium for a preset cooling time period; the adjustment amounts of the heating temperatures are different for the respective adjustment modes.
The formula is: a=δ1/δ0,
wherein a is the ratio, delta 1 is the temperature difference value (absolute value), and delta 0 is a preset stripping temperature difference standard;
in the implementation, the smaller the ratio of the temperature difference value to the preset stripping temperature difference standard is, the larger the probability that the temperature difference value can induce cracks after cooling is, and the lower the heating temperature of the liquid medium is required; the larger the ratio of the temperature difference value to the preset stripping temperature difference standard is, the smaller the probability that the temperature difference value can induce cracks after cooling is, the higher the heating temperature of the liquid medium is required to be used for re-inducing the temperature difference to generate cracks.
When the wafer stripping device adopts the second preset stripping mode, the stripping control unit adjusts the heating temperature of the liquid medium in the reheating process after the stripping end face is cooled, and adjusts the temperature according to the ratio of the temperature difference value to the preset stripping temperature difference standard, so that the crack at the temperature-induced crystal modification position can be effectively generated, and the success rate of wafer separation is improved.
Specifically, the peeling control unit adjusts the preset pressure according to a thickness standard corresponding to the modified point and the thickness of the peeled wafer, wherein:
if the thickness of the stripped wafer is greater than the thickness standard corresponding to the modified point, the stripping control unit judges to reduce the preset pressure;
if the thickness of the stripped wafer is smaller than the thickness standard corresponding to the modified point, the stripping control unit judges that the preset pressure is increased;
the reduction or increase of the preset pressure is in a proportional relation with a reference difference value, wherein the reference difference value is the absolute value of the difference value of the thickness standard corresponding to the thickness of the stripped wafer after stripping and the modified point.
Referring to fig. 3, the preset pressure generated on the stripping end face 60 uniformly by the liquid medium in the temperature difference induction can control the crack extension in the first crack direction 11, but cannot control the crack extension in the second crack direction 12, so that the thickness of the stripped wafer can meet the standard, and the preset pressure is adjusted to reduce the crack extension in the second crack direction 12 and control the consumption of the stripping process on the length direction of the ingot.
In practice, when the thickness of the peeled wafer is greater than the thickness standard corresponding to the modified point, the greater the absolute value of the difference between the thickness of the peeled wafer and the thickness standard corresponding to the modified point, which means that the greater the crack path extension induced by the crack path under the pressure of the liquid medium is in the second crack direction, the greater the reduction of the preset pressure at the time of adjustment is; when the thickness of the peeled wafer is smaller than the thickness standard corresponding to the modified point, the larger the absolute value of the difference between the thickness of the peeled wafer and the thickness standard corresponding to the modified point, which means that the crack path induced by the pressure of the liquid medium is smaller in the crack path extending in the second crack direction, and therefore, the smaller the increase of the preset pressure at the time of adjustment.
According to the wafer stripping device, the stripping control unit adjusts the preset pressure according to the thickness of the stripped wafer, so that the standard diameter corresponding to the preset pressure is adjusted, the pressure value of the liquid medium in the pressure container is further adjusted, and the uniformity of the stripping thickness of the wafer is ensured.
It can be understood that after the temperature induction of the stripping end face, the cooling and heating speeds of the end face are faster than those of the main body of the modified ingot due to the principle of cold and heat expansion, so that cracks appear in modified spots or modified layers modified by laser, the formation speed of the cracks is controlled through the soft change of temperature, the generation of the cracks in the first crack direction is avoided as much as possible through the pressure of a liquid medium on the stripping end face, the extension length of the cracks to the second crack direction is controlled within a limited length range through accurate pressure control, the stripping thickness of a wafer is ensured, the edge breakage phenomenon of the whole periphery is avoided through radial stripping, and the wafer is ensured to have proper effective use thickness and effective use area.
Referring to fig. 4, the present embodiment provides a wafer stripping method using the above device, which includes the following steps:
step 1, preparing a modified ingot;
step 2, obtaining the diameter of the modified ingot, and fixing one end of the modified ingot far away from the stripping end face on an ingot holding unit;
step 3, heating the ingot to a first set temperature;
step 4, calculating a first cooling temperature, filling liquid at the first cooling temperature from one end far away from the stripping end face of the modified ingot to one end of the stripping end face of the modified ingot, and maintaining the pressure at a corresponding pressure maintaining pressure until a preset cooling time is reached;
step 5, immediately releasing pressure from the pressure vessel after the preset cooling time is reached, and releasing the liquid medium from the pressure vessel, wherein the liquid level lowering direction of the liquid medium is opposite to the liquid level raising direction in the step 4;
step 6, detecting the temperature of the exposed stripping end face after the release of the liquid medium to determine the stripping mode of the wafer, wherein if the temperature difference is greater than a preset stripping temperature difference standard, the stripping end face is judged to accord with the direct stripping standard and the step 9 is carried out;
if the temperature difference is smaller than or equal to the preset stripping temperature difference standard, judging that the stripping end face does not accord with the direct stripping standard, and executing the step 7;
step 7, determining the heating temperature of the liquid medium of the temperature of the stripping end face input into the pressure container by the cooling component according to the ratio of the temperature difference value to the preset stripping temperature difference standard, controlling the cooling component to input the liquid medium of the heating temperature into the pressure container to carry out crystal separation induction on the stripping end face, and maintaining the pressure at the corresponding pressure maintaining pressure until the preset induction duration is reached;
step 8, immediately releasing pressure from the pressure vessel after the preset induction time is reached, and releasing the liquid medium from the pressure vessel, wherein the liquid level lowering direction of the liquid medium is opposite to the liquid level raising direction;
step 9, controlling a force application component of the stripping unit to be connected with the stripping end face;
step 10, controlling the power assembly to provide radial force to drive the force application assembly to move upwards so as to enable the stripping end face and the modified ingot main body to generate radial separation force, and enabling one end of the stripping end face to be separated from the modified ingot main body;
step 11, separating the separated wafer from the force application assembly, and measuring the thickness of the wafer;
wherein the temperature difference is the difference between the temperature of the stripping end face after the liquid medium is cooled and the heating temperature of the stripping end face;
the pressure value of the liquid medium in the pressure container is calculated according to the comparison result of the diameter of the stripping end face and the standard diameter corresponding to the preset pressure.
The first set temperature is 150 ℃, the first cooling temperature is 0 ℃, the liquid medium is a medium with specific heat capacity larger than or equal to that of water, and the liquid medium does not chemically react with the ingot at various temperatures.
Thus far, the technical solution of the present invention has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present invention is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present invention, and such modifications and substitutions will be within the scope of the present invention.
The foregoing description is only of the preferred embodiments of the invention and is not intended to limit the invention; various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A wafer peeling apparatus, comprising:
a pressure vessel filled with a liquid medium therein for providing a closed pressure environment for the modified ingot;
an ingot holding unit for vertically placing an axial direction of the modified ingot to be stripped in a pressure vessel to fix a position of the modified ingot and expose a stripped end face of the modified ingot, and heating the modified ingot as a whole to a set temperature;
a peeling unit disposed above the peeling end surface of the modified ingot for cooling a set position of the peeling end surface of the modified ingot to generate a separation point and a separation path by inducing a wafer by a temperature difference, and for generating a radial separation force by driving the peeling end surface and the modified ingot to separate the wafer from the modified ingot;
a pressure regulating unit connected with the pressure vessel for controlling the pressure of the liquid medium in the pressure vessel;
a detecting unit for detecting a temperature of a peeled end surface of the ingot and a thickness of the peeled wafer;
the stripping control unit is respectively connected with the pressure container, the ingot holding unit, the stripping unit and the pressure regulating unit and is used for determining the first cooling temperature of the liquid medium according to the heating temperature of the stripping end surface on the ingot holding unit and the diameter of the stripping end surface, determining the stripping mode of the wafer according to the temperature of the stripping end surface cooled by the liquid medium and the heating temperature of the stripping end surface, and determining the pressure value of the liquid medium in the pressure container according to the comparison result of the diameter of the stripping end surface and the standard diameter corresponding to the preset pressure;
wherein the modified ingot is an ingot after laser modification.
2. A wafer stripping apparatus as recited in claim 1, wherein the stripping unit includes a force application assembly for applying a radial separation force to the stripped end surface and the modified ingot, the force application assembly being fixedly connected to the stripped end surface to apply a radial separation force to the stripped end surface and the modified ingot body, wherein:
the force application component can be directly and fixedly connected with the stripping end face or fixedly connected with the stripping end face through an intermediate medium.
3. The wafer peeling apparatus according to claim 2, wherein the peeling unit further comprises:
the power assembly is connected with the force application assembly and is used for driving the force application assembly to move upwards by providing radial force so as to enable the stripping end face and the modified ingot main body to generate radial separation force;
and the cooling component is connected with the pressure container and is used for inputting the cooled/warmed liquid medium into the pressure container.
4. A wafer peeling apparatus as set forth in claim 3 wherein said peeling control unit determines a first temperature decrease temperature of the liquid medium based on a heating temperature of the peeling end face on the ingot holding unit and a diameter of the peeling end face;
the difference value between the heating temperature of the stripping end face and the first cooling temperature of the liquid medium is larger than or equal to a preset temperature difference value, and the first cooling temperature of the liquid medium and the diameter of the stripping end face are in inverse proportion.
5. The apparatus according to claim 4, wherein the peeling control unit is provided in advance with a preset peeling mode for peeling the wafer from the peeling end face after the temperature of the liquid medium is lowered, and comprises:
and directly controlling the power assembly to strip the wafer, or controlling the cooling assembly to input a liquid medium with the temperature higher than the temperature of the stripping end face into the pressure container to carry out crystal separation induction on the stripping end face and then controlling the power assembly to strip the wafer.
6. The wafer lift-off apparatus of claim 5, wherein the intermediate medium is a suction cup or an adhesive.
7. The apparatus according to claim 6, wherein the peeling control unit compares a temperature difference between a peeling end face temperature cooled by the liquid medium and a heating temperature of the peeling end face with a preset peeling temperature difference standard under a preset first condition to determine a peeling manner of the wafer;
if the temperature difference is larger than a preset stripping temperature difference standard, judging that the stripping end face meets a direct stripping standard and adopting a first preset stripping mode;
if the temperature difference is smaller than or equal to a preset stripping temperature difference standard, judging that the stripping end face does not meet the direct stripping standard and adopting a second preset stripping mode;
the first preset stripping mode is a mode of directly controlling the power assembly to strip wafers, and the second preset stripping mode is a mode of controlling the cooling assembly to input liquid medium with the temperature higher than that of the stripping end face into the pressure container to carry out crystal separation induction on the stripping end face and then controlling the power assembly to strip wafers.
8. The wafer peeling apparatus according to claim 7, wherein the peeling control unit controls the cooling module to input the liquid medium of the corresponding temperature into the pressure vessel under a preset first completion condition, wherein the peeling control unit determines a pressure value of the liquid medium in the pressure vessel according to a comparison result of a diameter of the peeling end face and a standard diameter corresponding to a preset pressure;
the preset first completion condition is that the corresponding temperature of the liquid medium is ready to be completed.
9. The apparatus according to claim 6, wherein the peeling control unit determines, under a second preset peeling mode response condition, a heating mode of the liquid medium of the peeling end face temperature input from the cooling module into the pressure vessel according to a ratio of the temperature difference value to a preset peeling temperature difference criterion;
wherein the second preset stripping mode response condition is that the second preset stripping mode is adopted; the adjustment amounts of the heating temperatures are different for the respective adjustment modes.
10. The wafer peeling apparatus according to claim 9, wherein the peeling control unit adjusts the preset pressure according to a thickness criterion that a thickness of the peeled wafer corresponds to the modified point, wherein:
if the thickness of the stripped wafer is greater than the thickness standard corresponding to the modified point, the stripping control unit judges to reduce the preset pressure;
if the thickness of the stripped wafer is smaller than the thickness standard corresponding to the modified point, the stripping control unit judges that the preset pressure is increased;
the reduction or increase of the preset pressure is in a proportional relation with a reference difference value, wherein the reference difference value is the absolute value of the difference value of the thickness standard corresponding to the thickness of the stripped wafer after stripping and the modified point.
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