CN117059463A - Dry etching assembly and dry etching machine - Google Patents

Abstract

The present disclosure relates to a dry etching component and a dry etching machine, on the one hand, capable of avoiding edge thinning caused by excessively long etching time, and having a risk of chipping in a subsequent process; on the other hand, because the upper surface of the shielding ring comprises a first surface, a second surface and a third surface which are sequentially connected from inside to outside, the second surface and the reference surface are arranged at an included angle, and the upper surface of the shielding ring is close to the electrostatic chuck from outside to inside along the axis direction, so that the radio frequency fringe electric field intensity inside the process chamber can be changed, the electric field force and the flow field force suffered by plasma at the edge part of the substrate to be etched can be influenced, the plasma at the edge part of the substrate to be etched can be bombarded on the surface of the substrate to be etched in the direction perpendicular to the surface of the substrate to be etched as much as possible, the appearance of the hole at the edge part of the substrate to be etched is improved, namely, the edge part of the substrate to be etched can be ensured to form a straight through hole, and the phenomenon of inclined holes is avoided.

Description

Dry etching assembly and dry etching machine

Technical Field

The present disclosure relates to the field of semiconductor devices, and in particular, to a dry etching assembly and a dry etching machine.

Background

In the field of manufacturing display panels, a dry etching process is required to remove materials on the surface of a substrate, and a film layer with a specific pattern is etched by combining a gluing shape, so that film layer patterning is realized. The basic principle of dry etching is to generate plasma containing charged particles such as ions and electrons and neutral atoms, molecules and free radicals with high chemical activity by using a glow discharge mode, and react with a film layer which is not covered by a glue coating layer.

The dry etching Process is performed using a dry etching tool including a Process Chamber (PC) in which a lower plate and an upper plate are disposed. When dry etching is performed, photoresist is arranged on the surface of a substrate to be etched (particularly including but not limited to a wafer, and the wafer is specifically described as an example), reaction gas is introduced into a process cavity from an air hole of an upper polar plate, glow discharge is performed to generate plasma, and the plasma is downwards diffused and reacts with the wafer arranged on a lower polar plate, so that the wafer is etched.

Conventionally, the etching time of the through-silicon via is long, often as long as 20 minutes, which tends to result in thinning of the wafer edge thickness, and the edge portion of the wafer is at risk of chipping in subsequent processes. In addition, the distribution of the plasma at the edge of the wafer and the angle of incidence on the wafer are different from those of other parts (namely, the middle part) of the wafer, so that the plasma at the edge of the wafer cannot normally reach the bottom of the hole of the through silicon via, and the hole at the edge of the wafer is easy to incline and stop etching. When the holes at the edge of the wafer are inclined, the subsequent CUBS (copper buried seed copper burying operation) and filling effect of the electroplating process are affected, and bad effects such as poor contact, increased resistance or electric leakage occur when the through silicon hole at the edge of the wafer is combined with other wafers.

Disclosure of Invention

Based on the above, a dry etching component and a dry etching machine are provided, which can reduce the fracture risk of the edge part of the wafer and avoid the phenomena that the holes of the edge part of the wafer are easy to incline and stop etching.

The technical scheme is as follows: a dry etching assembly, the dry etching assembly comprising:

the electrostatic chuck is used for supporting and fixing the substrate to be etched;

the shielding ring is circumferentially arranged around the axis of the electrostatic chuck, is positioned above the substrate to be etched and can shield the edge part of the substrate to be etched, and the projection of the shielding ring on the electrostatic chuck along the axis and the projection of the substrate to be etched on the electrostatic chuck form an annular overlapping area; the upper surface of the shielding ring comprises a first surface, a second surface and a third surface which are sequentially connected from inside to outside, and the first surface, the second surface and the third surface are circumferentially distributed around the axis; the upper surface of the shielding ring tends to be close to the electrostatic chuck from outside to inside along the direction of the axis; the surface perpendicular to the axis is defined as a reference surface, the first surface is parallel to the reference surface or forms an included angle with the reference surface, the second surface forms an included angle with the reference surface, and the third surface is parallel to the reference surface or forms an included angle with the reference surface.

In one embodiment, the angle formed by the first surface and the reference surface is defined as a1, and a1 is 0 ° to 5 °; the included angle formed by the second surface and the reference surface is defined as a2, and a2 is 10-20 degrees; the included angle formed by the third surface and the reference surface is defined as a3, and a3 is 0-5 degrees.

In one embodiment, the loop width of the overlap region is defined as W, which is 0.5mm-2.5mm.

In one embodiment, the outer diameter of the shadow ring forming a projection along the axis on the reference surface is defined as D1, the inner diameter is defined as D2, D1 is 350mmmm-450mm, and D2 is 295mm-299mm.

In one embodiment, the projected annular width of the first face along the axis on the reference face is defined as L1, L1 being 5mm-25mm; the projected annular width of the second face on the reference face along the axis is defined as L2, and L2 is 5mm-16mm; the projected annular width of the third face along the axis on the reference face is defined as L3, and L3 is 45mm-100mm.

In one embodiment, the lower surface of the shielding ring comprises a fourth surface, a fifth surface and a sixth surface which are sequentially connected from inside to outside, and the fourth surface, the fifth surface and the sixth surface are all circumferentially distributed around the axis; the fourth face, the fifth face and the sixth face are arranged in a Z shape.

In one embodiment, the fourth face is disposed opposite to the first face, and a spacing between the fourth face and the first face in the direction of the axis is defined as S1; a spacing of the first face and the third face in the direction of the axis is defined as S2; a spacing of the third face and the sixth face in the direction of the axis is defined as S3; s1 is 1mm-1.5mm, S2 is 1.5mm-3mm, and S3 is 5mm-8mm.

In one embodiment, the dry etching assembly further comprises an edge ring disposed about an axis of the electrostatic chuck at an outer periphery of the electrostatic chuck; the edge ring is matched with the shielding ring in a positioning way.

In one embodiment, a first protruding part is arranged on the top surface of the edge ring, and a first concave part matched with the first protruding part is arranged on the shielding ring; and/or the top surface of the edge ring is provided with a second concave part, and the shielding ring is provided with a second convex part which is matched with the second concave part.

In one embodiment, the first projection or the second recess is circumferentially disposed about the axis on the top surface of the edge ring; alternatively, the number of the first protruding parts is at least two; alternatively, the number of the second concave parts is at least two.

In one embodiment, the dry etching assembly further comprises a lifting mechanism connected to the shadow ring for driving the shadow ring to move along the axial direction.

In one embodiment, the lifting mechanism is a motor screw rod mechanism, a motor belt pulley, a motor roller, an air cylinder and a hydraulic cylinder.

In one embodiment, the dry etching assembly further comprises a guide mechanism for positioning within the process chamber, the shadow ring being movably positioned on the guide mechanism along the direction of the axis.

In one embodiment, the guide mechanism comprises more than two guide rods, the shielding ring is provided with guide through holes corresponding to the guide rods, and the guide rods are arranged in the guide through holes; or, the guide mechanism comprises more than two guide rails, and the shielding ring is provided with a sliding block in sliding fit with the guide rails.

A dry etching machine comprising the dry etching assembly.

According to the dry etching assembly and the dry etching machine, the shielding ring coaxially arranged above the electrostatic chuck shields the whole circumferential edge part of the substrate to be etched, so that on one hand, the thinning of crystal edges caused by overlong etching time can be avoided, and the risk of fragments exists in the subsequent manufacturing process; on the other hand, because the upper surface of the shielding ring comprises a first surface, a second surface and a third surface which are sequentially connected from inside to outside, the second surface and the reference surface are arranged at an included angle, and the upper surface of the shielding ring is close to the electrostatic chuck from outside to inside along the axis direction, so that the radio frequency fringe electric field intensity inside the process chamber can be changed, the electric field force and the flow field force suffered by plasma at the edge part of the substrate to be etched can be influenced, the plasma at the edge part of the substrate to be etched can be bombarded on the surface of the substrate to be etched in the direction perpendicular to the surface of the substrate to be etched as much as possible, the appearance of the hole at the edge part of the substrate to be etched is improved, namely, the edge part of the substrate to be etched can be ensured to form a straight through hole, and the phenomenon of inclined holes is avoided.

Drawings

The accompanying drawings, which are included to provide a further understanding of the disclosure, illustrate and explain the exemplary embodiments of the disclosure and together with the description serve to explain the disclosure, and do not constitute an undue limitation on the disclosure.

In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.

FIG. 1 is a schematic diagram of a dry etching apparatus according to an embodiment of the disclosure;

FIG. 2 is a schematic diagram of a dry etching apparatus according to another embodiment of the disclosure;

FIG. 3 is a schematic diagram of a dry etching apparatus according to another embodiment of the disclosure;

FIG. 4 is a schematic diagram of a dry etching apparatus according to another embodiment of the disclosure;

FIG. 5 is a schematic view of a shielding ring according to an embodiment of the disclosure;

FIG. 6 is a schematic view of a shadow ring according to another embodiment of the present disclosure;

FIG. 7 is a schematic view of a shielding ring according to another embodiment of the present disclosure;

fig. 8 is a schematic structural view of a shadow ring according to another embodiment of the present disclosure.

10. An electrostatic chuck; 20. a shielding ring; 21. a first face; 22. a second face; 23. a third face; 24. a fourth face; 25. a fifth surface; 26. a sixth face; 27. a guide through hole; 28. a first concave portion; 30. a substrate to be etched; 31. a through silicon via; 40. a lifting mechanism; 50. a guide mechanism; 60. an edge ring; 61. a first projection; 70. a process chamber; 80. an air injection mechanism; 90. and a vacuum pump.

Detailed Description

In order that the above-recited objects, features and advantages of the present disclosure will become more readily apparent, a more particular description of the disclosure will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. The present disclosure may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the disclosure, and therefore the disclosure is not to be limited to the specific embodiments disclosed below.

In the working process of the conventional dry etching machine, the etching time of the through silicon vias on the substrate to be etched is long, for example, 20 minutes, so that the thickness of the edge of the wafer is easily thinned, and the edge of the wafer has a chip risk in the subsequent process. In addition, the distribution of the plasma at the edge of the wafer and the angle of incidence on the wafer are different from those of other parts (namely, the middle part) of the wafer, so that the plasma at the edge of the wafer cannot normally reach the bottom of the hole of the through silicon via, and the hole at the edge of the wafer is easy to incline and stop etching.

Referring to fig. 1 and 5, fig. 1 shows a schematic structural diagram of a dry etching machine according to an embodiment of the disclosure, and fig. 5 shows a schematic structural diagram of a shadow ring 20 according to an embodiment of the disclosure. A dry etching assembly according to an embodiment of the present disclosure includes an electrostatic chuck 10 and a shadow ring 20. The electrostatic chuck 10 is used to support and hold a substrate 30 (including but not limited to a wafer) to be etched. The shielding ring 20 is circumferentially arranged around the axis (shown as Z in fig. 1) of the electrostatic chuck 10, the shielding ring 20 is located above the substrate 30 to be etched and can shield the edge portion of the substrate 30 to be etched, and the projection of the shielding ring 20 on the electrostatic chuck 10 along the axis and the projection of the substrate 30 to be etched on the electrostatic chuck 10 form an annular overlapping area. The upper surface of the shadow ring 20 includes a first surface 21, a second surface 22 and a third surface 23, which are sequentially connected from inside to outside. The first surface 21, the second surface 22 and the third surface 23 are all circumferentially distributed around the axis. In the direction along the axis, the upper surface of the shadow ring 20 tends to approach the electrostatic chuck 10 from the outside to the inside (i.e., the radial direction F of the shadow ring 20 as shown in fig. 5). Wherein a plane perpendicular to the axis is defined as a reference plane (not shown in the figure), the first plane 21 is parallel to or at an angle to the reference plane, the second plane 22 is at an angle to the reference plane, and the third plane 23 is parallel to or at an angle to the reference plane.

In the dry etching assembly, the shielding ring 20 coaxially arranged above the electrostatic chuck 10 shields the whole circumferential edge part of the substrate 30 to be etched, so that on one hand, the thinning of crystal edges caused by overlong etching time can be avoided, and the risk of fragments exists in the subsequent process; on the other hand, since the upper surface of the shielding ring 20 includes the first surface 21, the second surface 22 and the third surface 23 which are sequentially connected from inside to outside, the second surface 22 is disposed at an included angle with the reference surface, and the upper surface of the shielding ring 20 is in a trend of approaching to the electrostatic chuck 10 from outside to inside along the axis direction, so that the rf fringe electric field intensity inside the process chamber 70 can be changed, the electric field force and the flow field force suffered by the plasma at the edge portion of the substrate 30 to be etched can be influenced, the plasma at the edge portion of the substrate 30 to be etched can be bombarded on the surface of the substrate 30 to be etched in a direction perpendicular to the surface of the substrate 30 to be etched as much as possible, and the appearance of the through silicon hole at the edge portion of the substrate 30 to be etched (particularly, the area of the edge portion which is not shielded by the shielding ring 20) is improved, that is, the through hole can be formed at the edge portion of the substrate 30 to be etched is ensured, and the phenomenon of inclined hole is avoided.

It should be noted that, when the through silicon via 31 is a through hole, it means that the setting direction is parallel to the center line of the substrate 30 to be etched, or the included angle between the setting direction of the through silicon via 31 and the center line of the substrate 30 to be etched is smaller than a preset deviation, and the preset deviation may be approximately regarded as a through hole, and the preset deviation is flexibly adjusted and set according to the actual requirement, specifically, for example, is set to be between-3 ° and 3 °. Accordingly, the inclined holes are specifically disposed in a direction inclined with respect to the center line of the substrate 30 to be etched, with respect to the direction in which the through silicon vias 31 are disposed.

It should be noted that, in the direction along the axis, the upper surface of the shielding ring 20 tends to be close to the electrostatic chuck 10 from the outside to the inside, and it is understood that the distance between the upper surface of the shielding ring 20 and the electrostatic chuck 10 tends to be reduced in the direction along the outside to the inside.

It should be noted that, the upper surface of the shielding ring 20 refers to the surface of the shielding ring 20 facing away from the electrostatic chuck 10, and the lower surface of the shielding ring 20 refers to the other opposite surface of the shielding ring 20.

It should be noted that, alternatively, the cross-section of the shielding ring 20 along its own axis (as shown in fig. 1, O) includes, but is not limited to, a circular shape, and the cross-section of the electrostatic chuck 10 along its own axis (as shown in fig. 1, Z) includes, but is not limited to, a circular shape. As one example, the electrostatic chuck 10 has an elliptical cross section, and the shielding ring 20 may have a corresponding elliptical ring shape in cross section (the opening portion of the electrostatic chuck 10 may be kept circular to expose a circular substrate to be etched). The shapes of the electrostatic chuck 10, the first edge ring 60 and the second edge ring 60 are not limited in this disclosure, and those skilled in the art can flexibly configure and adjust the shapes according to the actual situation.

Referring to fig. 1, 5 and 6, fig. 6 is a schematic view illustrating a part of a shielding ring 20 according to another embodiment of the disclosure. Fig. 6 differs from fig. 5 in that the first face 21 shown in fig. 6 is arranged at an angle to the reference face. In one embodiment, the angle formed by the first face 21 and the reference face is defined as a1, a1 being 0 ° to 5 °; the included angle formed by the second surface 22 and the reference surface is defined as a2, and a2 is 10 degrees to 30 degrees; the angle formed by the third surface 23 and the reference surface is defined as a3 (not labeled in the figure), and a3 is 0 ° to 5 °. The inventor of the present application has noted that when the first surface 21, the second surface 22, and the third surface 23 are disposed in the above manner, it is possible to achieve that the plasma at the edge portion of the substrate 30 to be etched bombards the surface of the substrate 30 to be etched in a direction perpendicular to the surface of the substrate 30 to be etched, so as to improve the shape of the hole at the edge portion of the substrate 30 to be etched, that is, ensure that the edge portion of the substrate 30 to be etched can form a through hole, and avoid the phenomenon of inclined holes.

In one embodiment, referring to fig. 1, 5 and 6, when a1 is 0 °, i.e. the first surface 21 and the reference surface are parallel to each other as shown in fig. 5. Similarly, when a3 is 0 °, that is, the third face 23 and the reference face are parallel to each other as shown in fig. 5.

In one embodiment, referring to fig. 1, 5 and 6, for the first surface 21, the first surface 21 is not limited to a plane, and the first surface 21 may also be at least two first split surfaces sequentially connected along the radial direction of the shielding ring 20 (as shown in F of fig. 5), where an included angle between each first split surface and the reference surface is satisfied by an included angle relationship between the first surface 21 and the reference surface, that is, an included angle between each first split surface and the reference surface is 0 ° to 5 °. In addition, the included angles between the first split surfaces and the reference surface can be the same or different, and the first split surfaces and the reference surface can be flexibly set and adjusted according to actual requirements.

Similarly, in one embodiment, referring to fig. 1, 5 and 6, for the second surface 22, the second surface 22 is not limited to a plane, and the second surface 22 may also be at least two second split surfaces sequentially connected along the radial direction of the shielding ring 20 (as shown in F of fig. 5), where the included angle between each second split surface and the reference surface is satisfied by the relationship between the second surface 22 and the reference surface, that is, the included angle between each second split surface and the reference surface is 10 ° to 20 °. In addition, the included angles between the second split surfaces and the reference surface can be the same or different, and the second split surfaces and the reference surface can be flexibly arranged and adjusted according to actual requirements.

Similarly, in one embodiment, referring to fig. 1, 5 and 6, for the third surface 23, the third surface 23 is not limited to a plane, and the third surface 23 may also be at least two third split surfaces sequentially connected along the radial direction of the shielding ring 20 (as shown in F of fig. 5), where the included angle between each third split surface and the reference surface is satisfied by the included angle relationship between the third surface 23 and the reference surface, that is, the included angle between each third split surface and the reference surface is 0 ° to 5 °. In addition, the included angles between the third split surfaces and the reference surface can be the same or different, and the third split surfaces and the reference surface can be flexibly arranged and adjusted according to actual requirements.

In one embodiment, a1 includes, but is not limited to, 0 °, 1 °, 2 °, 3 °, 4 °, 5 °.

In one embodiment, a2 is specifically 10 ° -20 °, including but not limited to 10 °, 12 °, 13 °, 15 °, 17 °, 18 °, 19 °, 20 °.

In one embodiment, a3 includes, but is not limited to, 0 °, 1 °, 2 °, 3 °, 4 °, 5 °.

Referring again to FIG. 1, in one embodiment, the loop width of the overlap region is defined as W, which is 0.5mm-2.5mm. Thus, the inventors of the present application noted that the ring width dimension of the overlap region is sufficiently large, so that the shadow ring 20 plays a good role in protecting the edge portion of the substrate 30 to be etched; furthermore, the ring width dimension of the overlapping region is not so small that the edge portion of the substrate 30 to be etched is at risk of chipping; in addition, the plasma at the edge of the substrate 30 to be etched can bombard the surface of the substrate 30 to be etched in a direction perpendicular to the surface of the substrate 30 to be etched, so as to improve the shape of the hole at the edge of the substrate 30 to be etched, i.e. ensure that the edge of the substrate 30 to be etched can form a through hole, and avoid the phenomenon of inclined holes.

The overlapping region is a region where the substrate 30 to be etched is shielded by the shielding ring 20 in the direction along the axis, and the ring width W of the overlapping region is the difference between the diameter of the substrate 30 to be etched and the inner diameter D2 of the shielding ring 20.

As one example, W is specifically 1mm-1.5mm, including but not limited to 1mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm.

Referring to FIGS. 1 and 5, in one embodiment, the outer diameter of the shadow ring 20, which forms a projection along the axis on the reference surface, is defined as D1, the inner diameter is defined as D2, D1 is 350mmmm-450mm, and D2 is 295mm-299mm.

Specifically, D1 includes, but is not limited to, 360mm, 370mm, 380mm, 390mm, 395mm, 400mm, 405mm, 410mm, 415mm, 420mm, 430mm.

Specifically, D2 includes, but is not limited to, 295mm, 296mm, 297mm, 298mm, 299mm, and the specific size is flexibly adjusted and set according to the outer diameter size of the substrate 30 to be etched.

Referring to fig. 5, 7 and 8, fig. 7 is a schematic view illustrating a part of a structure of a shielding ring 20 according to still another embodiment of the present disclosure, and fig. 8 is a schematic view illustrating a part of a structure of a shielding ring 20 according to still another embodiment of the present disclosure. The shielding ring 20 shown in fig. 5, 7 and 8 is mainly different in size of L1. In one embodiment, the projected annular width of the first face 21 along the axis on the reference face is defined as L1, L1 being 5mm-25mm; the projected annular width of the second face 22 along the axis on the reference face is defined as L2, L2 being 5mm-16mm; the projected annular width of the third face 23 along the axis on the reference face is defined as L3, L3 being 45mm-100mm.

Specifically, L1 includes, but is not limited to, 10mm, 11mm, 13mm, 15mm, 17mm, 18mm, 19mm, 20mm, 25mm, and can be flexibly adjusted and selected according to the actual electric field force and flow field force of the edge portion of the substrate 30 to be etched, so that it can be beneficial to realize that the plasma at the edge portion of the substrate 30 to be etched bombards the surface of the substrate 30 to be etched in a direction perpendicular to the surface of the substrate 30 to be etched, thereby improving the shape of the hole at the edge portion of the substrate 30 to be etched, that is, ensuring that the edge portion of the substrate 30 to be etched can form a straight through hole, and avoiding the phenomenon of inclined holes.

Referring to fig. 1 and 5, specifically, L2 includes, but is not limited to, 6mm, 7mm, 8mm, 9mm, 10mm, 12mm, 15mm, etc., which can be flexibly adjusted and selected according to the actual electric field force and flow field force of the edge portion of the substrate 30 to be etched, so that it can be beneficial to realize that the plasma at the edge portion of the substrate 30 to be etched bombards the surface of the substrate 30 to be etched in a direction perpendicular to the surface of the substrate 30 to be etched, thereby improving the shape of the hole at the edge portion of the substrate 30 to be etched, i.e. ensuring that the edge portion of the substrate 30 to be etched can form a through hole, and avoiding the occurrence of the inclined hole phenomenon.

Referring to fig. 1 and 5, in one embodiment, the lower surface of the shielding ring 20 includes a fourth surface 24, a fifth surface 25 and a sixth surface 26, which are sequentially connected from inside to outside. The fourth face 24, the fifth face 25 and the sixth face 26 are all circumferentially distributed about the axis. The fourth face 24, the fifth face 25 and the sixth face 26 are arranged in a Z-shape. In this way, the shape of the shielding ring 20 is adapted to the structure of the electrostatic chuck 10 and its peripheral frame, and is stably disposed above the electrostatic chuck 10.

In addition, optionally, referring to fig. 5, the fourth surface 24 is blocked at an edge portion of the substrate 30 to be etched. The distance between the fourth surface 24 and the surface of the substrate 30 to be etched along the axial direction may be flexibly adjusted and set according to practical requirements, including but not limited to 0.5mm-1.5mm, thereby preventing the shadow ring 20 from contacting or damaging the substrate 30 to be etched while preventing the edge portion of the substrate 30 to be etched from being etched.

Referring to fig. 1 and 5, specifically, the fourth surface 24 and the sixth surface 26 are parallel to the first surface 21 and the third surface 23, respectively, and are perpendicular to the fifth surface 25.

Referring to fig. 1 and 5, in one embodiment, the fourth surface 24 is disposed opposite to the first surface 21, and the distance between the fourth surface 24 and the first surface 21 in the axial direction is defined as S1; the spacing of the first face 21 and the third face 23 in the direction of the axis is defined as S2; the distance between the third face 23 and the sixth face 26 in the direction of the axis is defined as S3; s1 is 1mm-1.5mm, S2 is 1.5mm-3mm, and S3 is 5mm-8mm.

Referring to fig. 3 and fig. 4, fig. 3 and fig. 4 are schematic structural diagrams of a dry etching machine according to two different embodiments of the disclosure. In one embodiment, the dry etch assembly further comprises an edge ring 60. An edge ring 60 is disposed around the axis of the electrostatic chuck 10 at the outer periphery of the electrostatic chuck 10. The edge ring 60 is in positioning engagement with the shroud ring 20. Thus, on the one hand, the edge ring 60 protects the electrostatic chuck 10 and supports the electrostatic chuck 10; on the other hand, when the edge ring 60 is matched with the shielding ring 20 in a positioning way, the shielding ring 20 can be precisely positioned, and the offset between the axis of the shielding ring 20 and the axis of the electrostatic chuck 10 is within 0.3mm, so that the processing quality of the substrate 30 to be etched can be ensured.

Referring to fig. 3 and 4, in one embodiment, the edge ring 60 has a first protrusion 61 on its top surface, and the shielding ring 20 has a first recess 28 corresponding to the first protrusion 61. Or, alternatively, the edge ring 60 is provided with a second recess on its top surface and the shielding ring 20 is provided with a second protrusion adapted to the second recess. Still further alternatively, the edge ring 60 is provided with a first projection 61 on its top surface and the shielding ring 20 is provided with a first recess 28 adapted to the first projection 61. In addition, the edge ring 60 has a second recess on its top surface, and the shielding ring 20 has a second protrusion corresponding to the second recess. Thus, when the edge ring 60 is matched with the shielding ring 20 in a positioning way, the shielding ring 20 can be positioned accurately, so that the offset between the axis of the shielding ring 20 and the axis of the electrostatic chuck 10 is within 0.3mm, and the processing quality of the substrate 30 to be etched can be ensured.

It should be noted that, the "first protruding portion 61" may be "a part of the edge ring 60", that is, "the first protruding portion 61" is integrally formed with "other parts of the edge ring 60"; or may be a separate component from the other portion of the edge ring 60, i.e., the first projection 61 may be manufactured separately and then combined with the other portion of the edge ring 60 into a single body. As shown in FIG. 3, in one embodiment, the "first tab 61" is a part of the "edge ring 60" that is integrally formed.

Referring to fig. 3 and 4, in one embodiment, the first protrusion 61 or the second recess is circumferentially disposed on the top surface of the edge ring 60 around the axis (as shown by Z); alternatively, the first protrusions 61 are at least two; alternatively, the number of the second concave portions is at least two.

Referring to fig. 3 and 4, in one embodiment, the dry etching assembly further includes a lift mechanism 40. The lifting mechanism 40 is connected to the shielding ring 20, and is used for driving the shielding ring 20 to move along the axial direction. In this way, in the process of taking and placing the substrate 30 to be etched on the electrostatic chuck 10, the shielding ring 20 is lifted by the lifting mechanism 40, and the shielding ring 20 is far away from the electrostatic chuck 10, so that enough space is available for taking and placing the substrate 30 to be etched, the operation is convenient, manual operation is not needed, and the degree of automation is high.

In one embodiment, the lifting mechanism 40 includes, but is not limited to, a motor screw mechanism, a motor pulley, a motor roller, a cylinder, and a hydraulic cylinder, so long as lifting operation of the shielding ring 20 along the axis direction can be realized, and the lifting mechanism is not limited herein, and can be flexibly set and adjusted according to actual requirements.

It should be noted that, the installation position of the lifting mechanism 40 in the process chamber 70 may be flexibly adjusted and set according to actual requirements, so long as the lifting operation of the driving shielding ring 20 along the axis direction can be achieved, which is not limited herein.

Referring to fig. 2, fig. 2 is a schematic structural diagram of a dry etching apparatus according to another embodiment of the disclosure. In one embodiment, the dry etching assembly further includes a guide mechanism 50. The guide mechanism 50 is disposed inside the process chamber 70, and the shadow ring 20 is movably disposed on the guide mechanism 50 along the axis direction. In this way, the shielding ring 20 is guided along the axial direction by the guide mechanism 50, so that after the substrate 30 to be etched is placed on the electrostatic chuck 10, the precise alignment of the shielding ring 20 and the substrate 30 to be etched on the electrostatic chuck 10 can be ensured, and the processing quality of the substrate 30 to be etched can be ensured.

Referring to fig. 2, in one embodiment, the guide mechanism 50 includes two or more guide rods, the shielding ring 20 is provided with guide through holes 27 corresponding to the guide rods, and the guide rods are disposed in the guide through holes 27. In this way, the shielding ring 20 is guided by more than two guide rods, so that the lifting operation of the shielding ring 20 along the axis is stable, and the accurate alignment can be realized.

It should be noted that, as an alternative, the guide rod may be only one.

As an alternative, the guide mechanism 50 includes more than two guide rails. The shielding ring 20 is provided with a slider which is in sliding fit with the guide rail. So, lead shielding ring 20 through more than two guide rails and slider matched with mode for shielding ring 20 is comparatively stable along the lift operation of axis, thereby can realize accurate counterpoint.

In order to make the technical solution and the effect of the present disclosure more clearly demonstrate, the following table is given in which several sets of through silicon vias with different inclinations are obtained on the substrate 30 to be etched when the shadow ring 20 with different parameters is in specific operation:

note that: the positive inclination indicates that the bottom of the through-silicon via is formed closer to the center line of the substrate 30 to be etched than the top, and the negative inclination indicates that the top of the through-silicon via is formed closer to the center line of the substrate 30 to be etched than the bottom.

It is known from analysis that when the respective parameters a1, a2, a3, L1 and L2 are adjusted, the degree of inclination of the through silicon vias (referred to as the angle formed between the through silicon vias and the center line of the substrate 30 to be etched) on the substrate 30 to be etched at different distances from the edge of the substrate 30 to be etched can be correspondingly changed and adjusted. And when the respective ranges of a1, a2, a3, L1 and L2 are set according to the data described in the above embodiments, the degree of inclination of the through silicon via with respect to the center line of the substrate 30 to be etched can be significantly improved, and the inclined holes are fewer.

Referring to fig. 1 and 5, in one embodiment, a dry etching apparatus includes the dry etching device of any of the above embodiments.

The technical effects of the dry etching machine are brought by the dry etching component due to the fact that the dry etching component is included, and the beneficial effects of the dry etching component are included and are not described in detail herein.

Referring to fig. 1 and 5, the dry etching apparatus further comprises a process chamber 70, a gas injection mechanism 80, an ion gas source and a vacuum pump 90. The dry etch component and the gas injection mechanism 80 are disposed within the process chamber 70. The gas spraying mechanism 80 is located above the electrostatic chuck 10 and opposite to the electrostatic chuck 10, and the gas spraying mechanism 80 is connected to a plasma gas source for spraying gas onto the plate surface of the substrate 30 to be etched. A vacuum pump 90 communicates with the process chamber 70 for pumping out the gases inside the process chamber 70. Alternatively, vacuum pump 90 includes, but is not limited to, one, two, three, four, or other numbers.

The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The foregoing examples merely represent several embodiments of the present disclosure, which are described in more detail and are not to be construed as limiting the scope of the application. It should be noted that variations and modifications can be made by those skilled in the art without departing from the spirit of the disclosure, which are within the scope of the disclosure. Accordingly, the scope of protection of the present disclosure should be determined by the following claims.

In the description of the present disclosure, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present disclosure.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless explicitly specified otherwise.

In the present disclosure, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the terms in this disclosure will be understood by those of ordinary skill in the art as the case may be.

In this disclosure, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact through an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.

Claims (15)

1. A dry etching assembly, the dry etching assembly comprising:

the electrostatic chuck is used for supporting and fixing the substrate to be etched;

the shielding ring is circumferentially arranged around the axis of the electrostatic chuck, is positioned above the substrate to be etched and can shield the edge part of the substrate to be etched, and the projection of the shielding ring on the electrostatic chuck along the axis and the projection of the substrate to be etched on the electrostatic chuck form an annular overlapping area; the upper surface of the shielding ring comprises a first surface, a second surface and a third surface which are sequentially connected from inside to outside, and the first surface, the second surface and the third surface are circumferentially distributed around the axis; the upper surface of the shielding ring tends to be close to the electrostatic chuck from outside to inside along the direction of the axis; the surface perpendicular to the axis is defined as a reference surface, the first surface is parallel to the reference surface or forms an included angle with the reference surface, the second surface forms an included angle with the reference surface, and the third surface is parallel to the reference surface or forms an included angle with the reference surface.

2. The dry etching assembly of claim 1, wherein the first face forms an angle a1 with the reference face, a1 being 0 ° to 5 °; the included angle formed by the second surface and the reference surface is defined as a2, and a2 is 10-20 degrees; the included angle formed by the third surface and the reference surface is defined as a3, and a3 is 0-5 degrees.

3. The dry etching assembly of claim 1, wherein the overlap region has a loop width defined as W, W being 0.5mm-2.5mm.

4. The dry etching assembly of claim 1, wherein an outer diameter of the shadow ring projected along the axis onto the reference surface is defined as D1, an inner diameter is defined as D2, D1 is 350 mm-450mm, and D2 is 295mm-299mm.

5. The dry etching assembly of claim 1, wherein a projected annular width of the first face along the axis on the reference face is defined as L1, L1 being 5mm-25mm; the projected annular width of the second face on the reference face along the axis is defined as L2, and L2 is 5mm-16mm; the projected annular width of the third face along the axis on the reference face is defined as L3, and L3 is 45mm-100mm.

6. The dry etching assembly according to claim 1, wherein the lower surface of the shielding ring comprises a fourth face, a fifth face and a sixth face which are sequentially connected from inside to outside, and the fourth face, the fifth face and the sixth face are all circumferentially distributed around the axis; the fourth face, the fifth face and the sixth face are arranged in a Z shape.

7. The dry etching assembly according to claim 6, wherein the fourth face is disposed opposite to the first face, and a spacing of the fourth face from the first face in the direction of the axis is defined as S1; a spacing of the first face and the third face in the direction of the axis is defined as S2; a spacing of the third face and the sixth face in the direction of the axis is defined as S3; s1 is 1mm-1.5mm, S2 is 1.5mm-3mm, and S3 is 5mm-8mm.

8. The dry etching assembly of claim 1, further comprising an edge ring disposed about an axis of the electrostatic chuck at an outer periphery of the electrostatic chuck; the edge ring is matched with the shielding ring in a positioning way.

9. The dry etching assembly according to claim 8, wherein a first protrusion is provided on a top surface of the edge ring, and the shielding ring is provided with a first recess corresponding to the first protrusion; and/or the top surface of the edge ring is provided with a second concave part, and the shielding ring is provided with a second convex part which is matched with the second concave part.

10. The dry etching assembly of claim 9, wherein the first projection or the second recess is circumferentially disposed on a top surface of the edge ring around the axis; alternatively, the number of the first protruding parts is at least two; alternatively, the number of the second concave parts is at least two.

11. The dry etching assembly of claim 1, further comprising a lift mechanism coupled to the shadow ring for driving the shadow ring to move along the axis.

12. The dry etching assembly of claim 11, wherein the lifting mechanism is a motor screw mechanism, a motor pulley, a motor roller, a cylinder, a hydraulic cylinder.

13. The dry etching assembly of claim 1, further comprising a guide mechanism for positioning within the process chamber, the shadow ring being movably positioned on the guide mechanism along the direction of the axis.

14. The dry etching assembly according to claim 13, wherein the guide mechanism includes two or more guide rods, the shutter ring is provided with guide through holes corresponding to the guide rods, and the guide rods are disposed in the guide through holes; or, the guide mechanism comprises more than two guide rails, and the shielding ring is provided with a sliding block in sliding fit with the guide rails.

15. A dry etching station comprising a dry etching assembly according to any one of claims 1 to 14.