CN117058004B - Crystal grain image reconstruction method of wafer, electronic equipment and storage medium - Google Patents
Crystal grain image reconstruction method of wafer, electronic equipment and storage medium Download PDFInfo
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- G06T3/00—Geometric image transformations in the plane of the image
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- G06T3/608—Rotation of whole images or parts thereof by skew deformation, e.g. two-pass or three-pass rotation
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- G06T2207/00—Indexing scheme for image analysis or image enhancement
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Abstract
The application discloses a crystal grain image reconstruction method of a wafer, electronic equipment and a storage medium, and relates to the field of semiconductor manufacturing. The method comprises the following steps: correcting any partial image based on a first image array pair of the crystal grains in the partial image to obtain a corrected partial image, wherein the first image array is a distribution position of the crystal grains in the partial image; combining the corrected partial images of the partial images to obtain a complete wafer image; and correlating each die in the complete wafer image with each die in the preset standard die array. The local image is corrected, the angle offset during local image acquisition is eliminated, each grain in the complete wafer image obtained by correcting local image reconstruction can be aligned with and correlated with each grain in the preset standard grain array, and therefore the relative position of any grain in the complete wafer image in the wafer is accurately known, and the grains are conveniently detected.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to a method for reconstructing a die image of a wafer, an electronic device, and a storage medium.
Background
Hundreds of thousands of dies can be fabricated on a wafer, typically with the dies being regular, so that the dies can be closely ordered on the wafer. When the wafer is scanned to the system for recording, the arrangement condition of the obtained crystal grains can be recorded because the crystal grains have huge quantity and small observable area, and the relative positions of the crystal grains are recorded.
To detect the die and determine whether there is a defect or flaw, a high-definition camera is required to capture the die, and only a part of the wafer can be captured at this time, so that all the whole wafer needs to be captured orderly for multiple times. Since the captured local image has angular offset due to the influence of environmental factors, the relative position of each die in the wafer cannot be accurately determined, and thus the detection result of the die is affected.
The foregoing is merely provided to facilitate an understanding of the principles of the present application and is not admitted to be prior art.
Disclosure of Invention
The present invention provides a method for reconstructing a die image of a wafer, an electronic device and a storage medium, and aims to solve the technical problem that the die detection result may be affected when a local image of the wafer is acquired to detect the die.
In order to achieve the above objective, the present application provides a method for reconstructing a die image of a wafer, wherein dies in different areas on the wafer correspond to different partial images, and the method for reconstructing the die image of the wafer comprises the following steps:
correcting a local image based on a first image array of crystal grains in the local image to obtain a corrected local image, wherein the first image array is a distribution position of the crystal grains in the local image, and the correction basis of the local image is an offset angle between the first image array and a rectangular side of the local image;
combining the corrected partial images of the partial images to obtain a complete wafer image;
and correlating each die in the complete wafer image with each die in a preset standard die array.
Optionally, the local image is rectangular, and the step of correcting the local image based on the first image array of the crystal grains in the local image to obtain a corrected local image includes:
determining the center coordinates of each crystal grain in the local image, wherein the center coordinates are coordinate data of geometric center points of the crystal grains in a basic coordinate system of the local image, and the basic coordinate system is constructed by taking adjacent edges of the local image as horizontal and vertical coordinate axes;
Arranging each crystal grain based on each central coordinate to obtain a first image array;
determining an offset angle of the first image array in the partial image according to a preset correction unit in the first image array, wherein the preset correction unit consists of a row of crystal grains or a column of crystal grains in the first image array;
and rotating the partial image in the opposite direction of the offset of the first image array in the partial image based on the offset angle to obtain the corrected partial image.
Optionally, the central coordinates include an abscissa and an ordinate, and the step of arranging the grains based on the central coordinates to obtain the first image array includes:
any crystal grain is obtained from the partial image and is used as a reference crystal grain;
acquiring grains in a preset range around the reference grains in the partial image to obtain a grain collection;
determining that the grain of which the difference value between the ordinate of the grain aggregate and the ordinate of the reference grain is smaller than a preset difference threshold value is in the same row with the reference grain in the first image array;
determining that the grain of which the difference value between the abscissa of the grain aggregate set and the abscissa of the reference grain is smaller than the preset difference threshold value is in the same column with the reference grain in the first image array;
And returning to the step of acquiring any grain from the partial image as a reference grain until the row and the column of each grain in the partial image in the first image array are determined.
Optionally, the step of determining the offset angle of the offset of the first image array in the partial image according to the preset correction unit in the first image array includes:
fitting based on the central coordinates of each crystal grain in the preset correction unit to obtain a rotation reference line;
and determining the offset angle according to the included angle between the rotation reference straight line and the coordinate axis of the basic coordinate system.
Optionally, the step of combining the corrected partial images of each partial image to obtain a complete wafer image includes:
combining the corrected partial images based on the positions of the corrected partial images when the partial images are acquired to obtain a combined image;
and de-duplicating the crystal grains of the overlapped part in the combined image to obtain the complete wafer image.
Optionally, the step of performing de-duplication on the grains of the overlapped part in the combined image to obtain the complete wafer image includes:
if the overlapped part is formed by overlapping two groups of continuous grains, taking the short-length grain group of the two groups of grains as a target group, and removing grains overlapped with the other grain group in the target group;
If the overlapping portion is that a group of continuous grains overlaps a group of discontinuous grains, grains overlapping another group of grains in the discontinuous grains are removed.
Optionally, the step of associating each die in the complete wafer image with each die in a predetermined standard die array includes:
determining a second image array of each die in the complete wafer image;
judging whether the number of the lines and the number of the columns of the grains in the second image array are the same as the number of the lines and the number of the columns of each grain in the preset standard grain array;
if the number of rows or columns is different, determining the same elements between the second image array and the preset standard grain array, wherein the same elements are rows or columns;
preliminarily aligning the second image array with the preset standard die array based on the same element, wherein the preliminary alignment is to align a row or column in the second image array with a row or column in the preset standard die array;
determining a first reference alignment unit of the second image array and a second reference alignment unit of the preset standard grain array based on the same element, wherein the numbers of grains in the first reference alignment unit and the second reference alignment unit are the same, and the relative position of the first reference alignment unit relative to the second image array is consistent with the relative position of the second reference alignment unit relative to the preset standard grain array;
And aligning the grains in the first reference alignment unit and the second reference alignment unit to integrally align the second image array with the preset standard grain array, and associating the aligned grains in the second image array with the preset standard grain array.
Optionally, after the step of determining whether the number of rows and columns of dies in the second image array is the same as the number of rows and columns of dies in the preset standard die array, the method includes:
if the number of rows and the number of columns are different, determining a first reference comparison unit of the second image array and a second reference comparison unit of the preset standard grain array, wherein the first reference comparison unit and the second reference comparison unit have the same attribute and are row or column, the first reference comparison unit is a middle row or a middle column in the second image array, and the second reference comparison unit is a middle row or a middle column of the preset standard grain array;
performing preliminary alignment on the second image array and the preset standard grain array so as to align the first reference alignment unit and the second reference alignment unit;
Determining a difference value of the number of grains of each row or each column aligned in the second image array and the preset standard grain array;
moving the second image array by a row or column of interval distance in the vertical direction of the first reference alignment unit to form a new preliminary alignment state;
returning to execute the step of determining the difference value of the grain numbers of the alignment elements in the second image array and the preset standard grain array based on the new initial alignment state until the grain rows or grain columns in the preset range near the second reference alignment unit are aligned with the first reference alignment unit;
and taking the attribute of the first reference alignment unit as the same element, and returning to execute the step of determining the first reference alignment unit of the second image array and the second reference alignment unit of the preset standard grain array based on the same element based on the preliminary alignment state when the minimum difference value is obtained.
In addition, to achieve the above object, the present application further provides an electronic device, including: the wafer grain image reconstruction method comprises the steps of a memory, a processor and a wafer grain image reconstruction program which is stored in the memory and can run on the processor, wherein the wafer grain image reconstruction program is executed by the processor to realize the wafer grain image reconstruction method.
In addition, in order to achieve the above object, the present application further provides a readable storage medium, where a die image reconstruction program of a wafer is stored, the die image reconstruction program of the wafer, when executed by a processor, implements the steps of the die image reconstruction method of the wafer as described above.
The embodiment of the application provides a crystal grain image reconstruction method of a wafer, electronic equipment and a storage medium. In the application, correcting a local image based on a first image array of crystal grains in the local image to obtain a corrected local image, wherein the first image array is a distribution position of the crystal grains in the local image, and the correction basis of the local image is an offset angle between the first image array and a rectangular side of the local image; combining the corrected partial images of the partial images to obtain a complete wafer image; and correlating each die in the complete wafer image with each die in a preset standard die array. The local image is corrected, the angle offset during local image acquisition is eliminated, each grain in the complete wafer image obtained by correcting local image reconstruction can be aligned with and correlated with each grain in the preset standard grain array, and therefore the relative position of any grain in the complete wafer image in the wafer is accurately known, and the grains are conveniently detected.
Drawings
FIG. 1 is a schematic diagram of a device architecture of a hardware operating environment according to an embodiment of the present application;
FIG. 2 is a flow chart of a first embodiment of a die image reconstruction method for a wafer according to the present application;
FIG. 3 is a flow chart of a second embodiment of a die image reconstruction method for a wafer according to the present application;
FIG. 4 is a flow chart of a third embodiment of a die image reconstruction method for a wafer according to the present application;
FIG. 5 is a schematic view of partial image angular offset in a die image reconstruction method of a wafer according to the present application;
FIG. 6 is a schematic diagram of a geometric center corresponding to a center coordinate in a die image reconstruction method of a wafer according to the present application;
FIG. 7 is a schematic diagram of a partial image rotation in a die image reconstruction method of a wafer according to the present application;
FIG. 8 is a schematic diagram of acquiring a die set in a die image reconstruction method of a wafer according to the present application;
FIG. 9 is a schematic diagram of a complete wafer image in a die image reconstruction method of a wafer of the present application;
fig. 10 is a schematic diagram of de-duplication in the die image reconstruction method of the wafer of the present application.
The realization, functional characteristics and advantages of the present application will be further described with reference to the embodiments, referring to the attached drawings.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
As shown in fig. 1, fig. 1 is a schematic device structure diagram of a hardware running environment according to an embodiment of the present application.
The device of the embodiment of the application can be electronic terminal devices such as a server, a smart phone, a PC, a tablet personal computer, a portable computer and the like.
As shown in fig. 1, the apparatus may include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, a communication bus 1002. Wherein the communication bus 1002 is used to enable connected communication between these components. The user interface 1003 may include a Display, an input unit such as a Keyboard (Keyboard), and the optional user interface 1003 may further include a standard wired interface, a wireless interface. The network interface 1004 may optionally include a standard wired interface, a wireless interface (e.g., WI-FI interface). The memory 1005 may be a high-speed RAM memory or a stable memory (non-volatile memory), such as a disk memory. The memory 1005 may also optionally be a storage device separate from the processor 1001 described above.
Optionally, the electronic device may further include a camera, an RF (Radio Frequency) circuit, a sensor, an audio circuit, a WiFi module, and the like. The terminal may also be configured with other sensors such as gyroscopes, barometers, hygrometers, thermometers, infrared sensors, etc., which are not described in detail herein. Those skilled in the art will appreciate that the electronic device structure shown in fig. 1 is not limiting of the electronic device and may include more or fewer components than shown, or may combine certain components, or may be arranged in different components.
As shown in fig. 1, an operating system, a network communication module, a user interface module, and a die image reconstruction program of a wafer may be included in a memory 1005, which is a type of computer storage medium.
In the device shown in fig. 1, the network interface 1004 is mainly used for connecting to a background server, and performing data communication with the background server; the user interface 1003 is mainly used for connecting a client (user side) and performing data communication with the client; the processor 1001 may be configured to invoke the die image reconstruction program of the wafer stored in the memory 1005, where the dies in different areas on the wafer correspond to different partial images, and the processor performs the following operations:
correcting a local image based on a first image array of crystal grains in the local image to obtain a corrected local image, wherein the first image array is a distribution position of the crystal grains in the local image, and the correction basis of the local image is an offset angle between the first image array and a rectangular side of the local image;
combining the corrected partial images of the partial images to obtain a complete wafer image;
and correlating each die in the complete wafer image with each die in a preset standard die array.
Optionally, the processor 1001 may call a die image reconstruction program of the wafer stored in the memory 1005, and further perform the following operations:
the local image is rectangular, and the step of correcting the local image based on the first image array of the crystal grains in the local image to obtain a corrected local image comprises the following steps:
determining the center coordinates of each crystal grain in the local image, wherein the center coordinates are coordinate data of geometric center points of the crystal grains in a basic coordinate system of the local image, and the basic coordinate system is constructed by taking adjacent edges of the local image as horizontal and vertical coordinate axes;
arranging each crystal grain based on each central coordinate to obtain a first image array;
determining an offset angle of the first image array in the partial image according to a preset correction unit in the first image array, wherein the preset correction unit consists of a row of crystal grains or a column of crystal grains in the first image array;
and rotating the partial image in the opposite direction of the offset of the first image array in the partial image based on the offset angle to obtain the corrected partial image.
Optionally, the processor 1001 may call a die image reconstruction program of the wafer stored in the memory 1005, and further perform the following operations:
the center coordinates include an abscissa and an ordinate, and the step of arranging the grains based on the center coordinates to obtain the first image array includes:
any crystal grain is obtained from the partial image and is used as a reference crystal grain;
acquiring grains in a preset range around the reference grains in the partial image to obtain a grain collection;
determining that the grain of which the difference value between the ordinate of the grain aggregate and the ordinate of the reference grain is smaller than a preset difference threshold value is in the same row with the reference grain in the first image array;
determining that the grain of which the difference value between the abscissa of the grain aggregate set and the abscissa of the reference grain is smaller than the preset difference threshold value is in the same column with the reference grain in the first image array;
and returning to the step of acquiring any grain from the partial image as a reference grain until the row and the column of each grain in the partial image in the first image array are determined.
Optionally, the processor 1001 may call a die image reconstruction program of the wafer stored in the memory 1005, and further perform the following operations:
The step of determining the offset angle of the first image array in the partial image according to the preset correction unit in the first image array comprises the following steps:
fitting based on the central coordinates of each crystal grain in the preset correction unit to obtain a rotation reference line;
and determining the offset angle according to the included angle between the rotation reference straight line and the coordinate axis of the basic coordinate system.
Optionally, the processor 1001 may call a die image reconstruction program of the wafer stored in the memory 1005, and further perform the following operations:
the step of combining the corrected partial images of each partial image to obtain a complete wafer image comprises the following steps:
combining the corrected partial images based on the positions of the corrected partial images when the partial images are acquired to obtain a combined image;
and de-duplicating the crystal grains of the overlapped part in the combined image to obtain the complete wafer image.
Optionally, the processor 1001 may call a die image reconstruction program of the wafer stored in the memory 1005, and further perform the following operations:
the step of performing de-duplication on the grains of the overlapped part in the combined image to obtain the complete wafer image comprises the following steps:
If the overlapped part is formed by overlapping two groups of continuous grains, taking the short-length grain group of the two groups of grains as a target group, and removing grains overlapped with the other grain group in the target group;
if the overlapping portion is that a group of continuous grains overlaps a group of discontinuous grains, grains overlapping another group of grains in the discontinuous grains are removed.
Optionally, the processor 1001 may call a die image reconstruction program of the wafer stored in the memory 1005, and further perform the following operations:
the step of associating each die in the complete wafer image with each die in a predetermined standard die array comprises:
determining a second image array of each die in the complete wafer image;
judging whether the number of the lines and the number of the columns of the grains in the second image array are the same as the number of the lines and the number of the columns of each grain in the preset standard grain array;
if the number of rows or columns is different, determining the same elements between the second image array and the preset standard grain array, wherein the same elements are rows or columns;
preliminarily aligning the second image array with the preset standard die array based on the same element, wherein the preliminary alignment is to align a row or column in the second image array with a row or column in the preset standard die array;
Determining a first reference alignment unit of the second image array and a second reference alignment unit of the preset standard grain array based on the same element, wherein the numbers of grains in the first reference alignment unit and the second reference alignment unit are the same, and the relative position of the first reference alignment unit relative to the second image array is consistent with the relative position of the second reference alignment unit relative to the preset standard grain array;
and aligning the grains in the first reference alignment unit and the second reference alignment unit to integrally align the second image array with the preset standard grain array, and associating the aligned grains in the second image array with the preset standard grain array.
Optionally, the processor 1001 may call a die image reconstruction program of the wafer stored in the memory 1005, and further perform the following operations:
after the step of determining whether the number of rows and columns of dies in the second image array is the same as the number of rows and columns of dies in the preset standard die array, the method includes:
if the number of rows and the number of columns are different, determining a first reference comparison unit of the second image array and a second reference comparison unit of the preset standard grain array, wherein the first reference comparison unit and the second reference comparison unit have the same attribute and are row or column, the first reference comparison unit is a middle row or a middle column in the second image array, and the second reference comparison unit is a middle row or a middle column of the preset standard grain array;
Performing preliminary alignment on the second image array and the preset standard grain array so as to align the first reference alignment unit and the second reference alignment unit;
determining a difference value of the number of grains of each row or each column aligned in the second image array and the preset standard grain array;
moving the second image array by a row or column of interval distance in the vertical direction of the first reference alignment unit to form a new preliminary alignment state;
returning to execute the step of determining the difference value of the grain numbers of the alignment elements in the second image array and the preset standard grain array based on the new initial alignment state until the grain rows or grain columns in the preset range near the second reference alignment unit are aligned with the first reference alignment unit;
and taking the attribute of the first reference alignment unit as the same element, and returning to execute the step of determining the first reference alignment unit of the second image array and the second reference alignment unit of the preset standard grain array based on the same element based on the preliminary alignment state when the minimum difference value is obtained.
Referring to fig. 2, in a first embodiment of a die image reconstruction method of a wafer, dies in different areas on the wafer correspond to different partial images, the die image reconstruction method of the wafer includes the following steps:
step S10, correcting a local image based on a first image array of crystal grains in the local image to obtain a corrected local image, wherein the first image array is a distribution position of the crystal grains in the local image, and the correction basis of the local image is an offset angle between the first image array and a rectangular side of the local image;
since the volume of the die on the wafer is small, a partial image, which is a part of the wafer and includes dies in different areas of the wafer, is usually captured by a high-definition camera when the die is inspected. For example, when acquiring a partial image, the camera starts from an initial area on the wafer, acquires one partial image of the wafer, and then moves to the next area to acquire a partial image until each area of the wafer is traversed. It can be understood that, due to environmental factors, such as different movement conditions when the camera moves, the angle or position of each time the camera captures an image is not necessarily a preset standard angle or position, so that the whole crystal grain in the local image actually captured may show an angular offset, for example, referring to fig. 5, fig. 5 is a schematic view of the local image angular offset in the present application, a rectangular box in the figure may be denoted as a crystal grain 2a, and it is obvious that the arrangement condition of each crystal grain 2a is angularly offset relative to the local image 1 a. Therefore, when the partial images are recombined into the complete wafer image, each die on the complete wafer image cannot correspond to the die in the actual wafer, that is, the die on the image cannot be accurately determined to actually correspond to the die on the wafer, so that the detection of the die is affected. In view of the above problems, the present application provides a method for reconstructing a die image of a wafer, in which each partial image is corrected before reconstruction, so as to eliminate angular offset of the partial image, so that a die in a complete wafer image after reconstruction can be well correlated with a die in an actual wafer, thereby facilitating die detection.
For example, for any partial image, a first image array of the grains in the partial image is determined, where the first image array is a distribution position of the grains in the partial image, as shown in fig. 5, the distribution position of each grain 2a in the figure is the first image array, and based on the first image array, an angle offset existing in the camera when the partial image is shot can be reflected by the first image array, for example, an arbitrary column or a row of grains in the first image array is obtained, and according to an offset angle presented by the arbitrary column or row of grains and a rectangular edge of the partial image, the angle of the partial image offset can be corrected.
In a possible implementation manner, the local image is rectangular, and the step of correcting the local image based on the first image array of the crystal grains in the local image to obtain a corrected local image includes:
step S110, determining the center coordinates of each crystal grain in the partial image, wherein the center coordinates are coordinate data of geometric center points of the crystal grains in a basic coordinate system of the partial image, and the basic coordinate system is constructed by taking adjacent edges of the partial image as abscissa and ordinate axes;
illustratively, the center coordinates of each grain in the partial image are determined. It should be noted that, the local image is usually rectangular, the coordinate system corresponding to the center coordinate is a basic coordinate system constructed by taking the adjacent sides of the local image as the abscissa and ordinate axes, and the center coordinate is actually the geometric center point of the crystal grain. The method includes determining a center coordinate of a crystal grain according to a vertex of the crystal grain, for example, determining a mean value of coordinate data of two sets of adjacent vertices, determining coordinate data of the vertex according to a pixel point where the vertex is located, specifically, arbitrarily obtaining one vertex as a base vertex, taking the base vertex and a vertex adjacent to the base vertex as a first vertex set, taking the base vertex and another vertex adjacent to the base vertex as a second vertex set, taking a mean value of two pairs of coordinate data of two vertices in the first vertex set (wherein, in the pair of coordinate data, coordinate data are coaxial, for example, like a transverse axis) as coordinate data of one coordinate axis of the center coordinate, and taking a mean value of two pairs of coordinate data of two vertices in the second vertex set as coordinate data of the other coordinate axis of the center coordinate. As shown in fig. 6, a geometric center diagram corresponding to the center coordinates of the die in the present application is shown, the center coordinates of the geometric center P1 of the die can be calculated by the coordinates of the vertices P2 of the die (four vertices P2 exist in fig. 6), and the specific calculation process is also determined by the skilled person, which is not described herein again.
Step S120, arranging the grains based on the central coordinates to obtain the first image array;
step S130, determining an offset angle of the first image array in the partial image according to a preset correction unit in the first image array, wherein the preset correction unit consists of a row of grains or a column of grains in the first image array;
illustratively, the first image array is obtained by arranging the dies according to the center coordinates. And determining the offset angle of the partial image according to a preset correction unit in the grain array. The preset correction unit consists of one row of crystal grains or one row of crystal grains in the first image array. Taking a grain row as an example, the included angle between the straight line obtained by fitting the grains in the grain row and the longitudinal axis in the basic coordinate system is the offset angle.
Step S140, rotating the partial image in a direction opposite to the offset direction of the first image array in the partial image based on the offset angle to obtain the corrected partial image.
Illustratively, the corrected partial image may be obtained by rotating each point in the partial image by the offset angle in a direction opposite to the offset direction of the first image array in the partial image. For example, referring to fig. 7, a schematic diagram of rotating a partial image in the application is shown. In the figure, the corrected partial image 1b is obtained by rotating the partial image 1a by the offset angle α in the opposite direction of the offset, and the first image array does not shift in the corrected partial image 1 b.
In a possible embodiment, the center coordinates include an abscissa and an ordinate, and the step of arranging each die based on each center coordinate to obtain the first image array includes:
step S121, any crystal grain is obtained from the partial image to serve as a reference crystal grain;
step S122, obtaining grains in a preset range around the reference grains in the partial image to obtain a grain aggregation set;
step S123, determining that the grain in the grain aggregate set, the difference value between the ordinate of which and the ordinate of which is smaller than a preset difference threshold value, is in the same row as the reference grain in the first image array;
step S124, determining that the grain in the difference value between the abscissa of the grain aggregate set and the abscissa of the reference grain is smaller than the preset difference threshold value, and the grain is in the same column with the reference grain in the first image array;
step S125, the step of acquiring any grain from the partial image as a reference grain is performed back until the row and column of each grain in the partial image in the first image array are determined.
Illustratively, one grain is arbitrarily acquired in the partial image as a reference grain, and grains within a preset range around the reference grain in the partial image are acquired to obtain a grain set. The size of the peripheral preset range may be set by a skilled person. Taking the smallest range as an example, for example, a circle of grains around the reference grain, that is, 8 grains closest to the reference grain, assuming that the reference coordinate is (x 0, y 0), as shown in fig. 8, fig. 8 is a schematic diagram of grain set acquisition in the present application, and the corresponding acquired grain set includes (x 1, y 1), (x 2, y 2), (x 8, y 8). It will be appreciated that although the angles at which the partial images are acquired may be offset, the angles of offset are typically not excessive. The die having a difference between the ordinate of the die set and the ordinate of the reference die of less than the predetermined difference threshold is determined to be in the same row as the reference die in the first image array, and correspondingly, the die having a difference between the abscissa of the die set and the abscissa of the reference die of less than the predetermined difference threshold is determined to be in the same column as the reference die in the first image array. Taking fig. 8 as an example, the differences between x0 and x2 and the differences between x0 and x7 are smaller than the predetermined difference threshold, so that the dies at the positions corresponding to (x 2, y 2) and (x 7, y 7) are determined to be in the same row as the dies at the positions corresponding to (x 0, y 0) in the first image array, and likewise, the differences between y0 and y4 and the differences between y0 and y5 are smaller than the predetermined difference threshold, so that the dies at the positions corresponding to (x 4, y 4) and (x 5, y 5) are determined to be in the same row as the dies at the positions corresponding to (x 0, y 0) in the first image array. In this way, the grains in the same row in the first image array and the grains in the same column in the first image array can be determined, thereby completing the arrangement of the first image array.
In a possible embodiment, the step of determining the offset angle of the first image array in the partial image according to the preset correction unit in the first image array includes:
step S131, fitting based on the central coordinates of each crystal grain in the preset correction unit to obtain a rotation reference line;
and step S132, determining the offset angle according to the included angle between the rotation reference straight line and the coordinate axis of the basic coordinate system.
The central coordinates of each grain in the preset correcting unit are fitted to obtain a rotation reference line, and then an offset angle is determined according to an included angle between the rotation reference line and a coordinate axis of the basic coordinate system, for example, when the preset correcting unit is a row of grains, the offset angle is an included angle between the rotation reference line and a transverse axis of the basic coordinate system, and when the preset correcting unit is a column of grains, the offset angle is an included angle between the rotation reference line and a longitudinal axis of the basic coordinate system. As shown in fig. 7, the preset correction unit is a row of grains, the center coordinates of each grain in the row of grains are fitted to obtain a rotation reference line, and each point in the partial image is rotated by an offset angle according to the opposite direction of the offset, so as to obtain the corrected partial image.
For example, let the preset correcting unit be a row of grains, there are n grains, and the center coordinates of each grain in the preset correcting unit are: (x 1, y 1), (x 2, y 2), (xn, yn), rotation reference line obtained by fitting a unitary linear regression to each center coordinate:
y=kx+b
wherein:
otherwise, if the preset correcting unit is set as a row of grains, when n grains exist, the center coordinates of each grain in the preset correcting unit are as follows: (x 1, y 1), (x 2, y 2), (xn, yn), rotation reference line obtained by fitting a unitary linear regression to each center coordinate:
x=ky+b
wherein:
further, the values are described such that the angle between the rotation reference line and the coordinate axis is actually the angle represented by the slope of the rotation reference line, for example: y=kx+b. The angle can be found from the arctan (k) arctangent function. In order to ensure the accuracy of the offset angle, taking a behavior example, m rows of grains can be selected to fit to obtain m rotation reference lines, and m line slopes k1, k2, and km are also obtained, so that the average offset angle is:
where θ is the average offset angle (i.e., the exact offset angle), and arctan () is the arctan function.
Generating a rotation matrix according to the offset angle theta:
And (3) rotating the points in the partial image acted by the rotation matrix to obtain the corrected partial image.
Step S20, combining the corrected partial images of the partial images to obtain a complete wafer image;
the corrected partial images are spliced and combined according to the position of the corrected partial images when the partial images are acquired, so as to obtain a complete wafer image, as shown in fig. 9, which is a schematic diagram of the complete wafer image in the application, and the complete wafer image 1c is obtained by combining the corrected partial images 1 a.
Step S30, each die in the complete wafer image is associated with each die in a preset standard die array.
It should be noted that the preset standard die array is a distribution position of each die in the standard wafer.
The whole wafer image is formed by correcting the partial image, and each crystal grain in the whole wafer image and each crystal grain in the preset standard crystal grain array can be aligned and correlated because the correcting partial image has no angle offset, so that the relative position of any crystal grain in the whole wafer image in the wafer is accurately known, and the crystal grain can be conveniently detected.
In the implementation, correcting any partial image based on a first image array of crystal grains in the partial image to obtain a corrected partial image, wherein the first image array is a distribution position of the crystal grains in the partial image; combining the corrected partial images of the partial images to obtain a complete wafer image; and correlating each die in the complete wafer image with each die in a preset standard die array. The local image is corrected, the angle offset during local image acquisition is eliminated, each grain in the complete wafer image obtained by correcting local image reconstruction can be aligned with and correlated with each grain in the preset standard grain array, and therefore the relative position of any grain in the complete wafer image in the wafer is accurately known, and the grains are conveniently detected.
Referring to fig. 3, a second embodiment of the present application is presented based on the first embodiment of the present application. The same parts as those of the above embodiments in the present application may refer to the above, and are not repeated here. The step of combining the corrected partial images of each partial image to obtain a complete wafer image comprises the following steps:
step A10, based on the position of each corrected local image when the local image is acquired, combining the corrected local images to obtain a combined image;
and step A20, performing de-duplication on the grains of the overlapped part in the combined image to obtain the complete wafer image.
Illustratively, the corrected partial images are combined to obtain a combined image based on the position of the corrected partial images at the time of partial image acquisition. It should be noted that, because of environmental factors during image capturing, there may be an overlapping portion between two partial images due to surplus capturing during image capturing, and thus, in a combined image, there may be an overlapping portion between two adjacent corrected partial images. The dies in the overlapping portions of the combined image are de-duplicated to obtain a complete wafer image, typically removing unclear or discontinuous dies in the overlapping portions.
In a possible embodiment, the step of de-duplicating the grains of the overlapped portion in the combined image to obtain the complete wafer image includes:
step A210, if the overlapping portion is that two groups of continuous grains overlap, taking the group of grains with short length in the two groups of grains as a target group, and removing the grains overlapping with the other group of grains in the target group;
step a220, if the overlapping portion is that a group of continuous grains overlaps a group of discontinuous grains, removing grains overlapping another group of grains in the discontinuous grains.
Illustratively, there are various cases where the overlapped portion of the grains overlap, and the cases will be discussed in this application. If the overlap is two consecutive groups of grains overlap, where a group may be a row or a column, then a group of grains of longer length may be retained. As shown in fig. 10, fig. 10 is a schematic diagram of de-duplication in the application, in which in case a of fig. 10, there are two groups of grains, namely, a group of grains 1 consisting of a grain a1 indicated by a small rectangle with a solid line and a group of grains 2 consisting of a grain a2 indicated by a small rectangle with a broken line, wherein the group of grains 1 is longer than the group of grains 2 (as shown in fig. 10, the group of grains 1 includes four grains a1, the group of grains 2 includes three grains a2, so the group of grains 1 is longer than the group of grains 2), and the group of grains 2 are moved to the grains overlapped with the group of grains 1, that is, the group of grains 2 is removed, thereby the de-duplication is completed. If the overlapping portion is that a group of continuous grains overlaps with a group of discontinuous grains, grains overlapping with another group of grains in the discontinuous grains are removed, and as shown in case b of fig. 10, there are two groups of grains, that is, a group of grains 3 consisting of grains b1 indicated by a small rectangle of a solid line and a group of grains 4 consisting of grains b2 indicated by a small rectangle of a broken line, respectively, wherein the grains 3 are discontinuous, and grains overlapping with the group of grains 4 in the group of grains 3 are removed. Fig. 10 also includes a case c where there is no overlap between each crystal grain c1 indicated by the small rectangle and each crystal grain c2 indicated by the small rectangle with a broken line, and no processing is performed at this time. In addition, in the case where the overlapped portion grains cannot be continuous, they may be directly omitted. It will be appreciated that by the de-duplication process described above, the complete wafer image may be further optimized such that it is more conducive to die inspection.
Referring to fig. 4, a third embodiment of the present application is presented based on the second embodiment of the present application. The same parts as those of the above embodiments in the present application may refer to the above, and are not repeated here. The step of associating each die in the complete wafer image with each die in a predetermined standard die array comprises:
step B10, determining a second image array of each die in the complete wafer image;
illustratively, the whole wafer image is normalized to obtain an array of dies in the whole wafer image, namely a second image array, and it is understood that since the whole wafer image has no angular offset, a row of dies and a column of dies can be clearly determined, so as to obtain the second image array. In addition, the second image array can also be determined in accordance with the determination of the first image array, so that no index is required here.
Step B20, judging whether the number of lines and the number of columns of the grains in the second image array are the same as the number of lines and the number of columns of each grain in the preset standard grain array;
the method includes the steps of determining whether the number of rows and the number of columns of the grains in the second image array are the same as those of the grains in the preset standard grain array, and if the number of rows and the number of columns are the same, aligning the grains in the second image array with the grains in the preset standard grain array without bit shifting, so that the grains in the two arrays can be aligned conveniently and the aligned grains can be associated.
Step B30, if the number of rows or columns is different, determining the same elements between the second image array and the preset standard grain array, wherein the same elements are rows or columns;
step B40, primarily aligning the second image array and the preset standard grain array based on the same element, wherein the primarily aligning is to align the rows or columns in the second image array with the rows or columns in the preset standard grain array;
for example, if the number of rows or columns is different, the same element between the second image array and the preset standard grain array is determined, where the same element is a row or a column. I.e. if the number of rows is the same, the corresponding same element is a row. And preliminarily aligning the second image array with the preset standard grain array based on the same element, wherein the preliminary alignment aligns the rows or columns in the second image array with the rows or columns in the preset standard grain array. The same elements are taken as row examples for explanation, and each row in the second image array is aligned with each row in the preset standard grain array one by one, so that preliminary alignment is completed, and it is understood that after preliminary alignment is performed based on the rows, the position of the second image array in the longitudinal direction cannot be determined in the preliminary alignment state due to unequal number of columns of the quantitative arrays.
Step B50, determining a first reference alignment unit of the second image array and a second reference alignment unit of the preset standard grain array based on the same element, wherein the numbers of grains in the first reference alignment unit and the second reference alignment unit are the same, and the relative position of the first reference alignment unit relative to the second image array is consistent with the relative position of the second reference alignment unit relative to the preset standard grain array;
illustratively, the same element is a row or a column, a row of grains is selected from the second image array as a first basic alignment unit and a row of grains is selected from the preset standard grain array as a second basic alignment unit, or a column of grains is selected from the second image array as a first basic alignment unit and a column of grains is selected from the preset standard grain array as a second basic alignment unit, and the numbers of grains in the first basic alignment unit and the second basic alignment unit are the same. And the relative position of the first reference alignment unit relative to the second image array is consistent with the relative position of the second reference alignment unit relative to the preset standard grain array. For example, if the first reference alignment unit is at the middle position of the second image array, the second reference alignment unit is also at the middle position of the preset standard grain array; if the first reference alignment unit is at the left side position of the second image array, the second reference alignment unit is also at the left side position of the preset standard grain array; if the first reference alignment unit is at the right side of the second image array, the second reference alignment unit is also at the left side of the preset standard die array, which is not illustrated here.
And step B60, aligning the grains in the first reference alignment unit and the second reference alignment unit so as to integrally align the second image array with the preset standard grain array and correlate the aligned grains in the second image array with the preset standard grain array.
Illustratively, in the preliminary alignment state, the dies in the first reference alignment unit and the second reference alignment unit are aligned (the number of dies in the two units is equal), so that the second image array and the preset standard die array are integrally aligned, and then the aligned dies in the second image array and the preset standard die array are associated. It can be appreciated that in the present embodiment, in the case that the number of rows or columns of dies is different, the association between each die in the complete wafer image and each die in the preset standard die array is achieved.
In a possible embodiment, after the step of determining whether the number of rows and columns of dies in the second image array is the same as the number of rows and columns of dies in the preset standard die array, the method includes:
step B310, if the number of rows and the number of columns are different, determining a first reference comparison unit of the second image array and a second reference comparison unit of the preset standard grain array, wherein the first reference comparison unit and the second reference comparison unit have the same attribute and are in a row or a column, the first reference comparison unit is in a middle row or a middle column in the second image array, and the second reference comparison unit is in a middle row or a middle column in the preset standard grain array;
If the number of rows and the number of columns are different, a reference comparison unit is selected from the second image array, and a second reference comparison unit is selected from the preset standard grain array, wherein the first reference comparison unit and the second reference comparison unit have the same attribute and are row or column, the initial first reference comparison unit is the middle row or middle column in the second image array, and the second reference comparison unit is the middle row or middle column of the preset standard grain array.
Step B410, performing preliminary alignment on the second image array and the preset standard grain array so as to align the first reference alignment unit and the second reference alignment unit;
illustratively, the second image array is initially aligned with the predetermined standard die array to align the first reference alignment unit with the second reference alignment unit. If the attribute of the first reference comparing unit and the attribute of the second reference comparing unit are rows, the preliminary alignment is to align each row of grains in the second image array with each row of grains in the preset standard grain array, and ensure that the first reference comparing unit and the second reference comparing unit are aligned.
Step B510, determining a difference value of the number of grains of each row or each column aligned in the second image array and the preset standard grain array;
illustratively, also based on the above example, with the properties of the first reference comparing unit and the second reference comparing unit being the behavior examples, the difference between the numbers of grains of the aligned rows in the second image array and the preset standard grain array, that is, the difference value, is calculated, and it is understood that the larger the difference value is, the higher the degree of deviation (i.e., the greater the likelihood of not being aligned) of the second image array and the preset standard grain array is, and conversely, the lower the degree of deviation (i.e., the greater the likelihood of being aligned) of the second image array and the preset standard grain array is.
Step B610, moving the second image array by a row or column of interval distance in the vertical direction of the first reference alignment unit to form a new preliminary alignment state;
for example, if the first reference alignment unit is a row, the first reference alignment unit is vertical in the vertical direction, so the second image array may be moved up or down by a spacing distance of one row or column, thereby a new preliminary aligned state.
Step B710, returning to execute the step of determining the difference value of the number of grains of the alignment element in the second image array and the preset standard grain array based on the new preliminary alignment state until the line or the column of grains in the preset range near the second reference alignment unit is traversed to be aligned with the first reference alignment unit;
illustratively, when a new preliminary alignment state is formed, the step of determining the difference value of the number of grains of the alignment elements in the second image array and the preset standard grain array is performed again. That is, in a new preliminary alignment state, the difference value of the number of grains in each aligned row or column is calculated until the grain row or grain column in the preset range near the second reference alignment unit is aligned with the first reference alignment unit, or the grain row or grain column in the preset range near the first reference alignment unit is aligned with the second reference alignment unit, wherein the preset near preset range can be set by a technician according to the needs. To screen out the initial alignment state of the second image array with low or no deviation from the preset standard grain array as far as possible.
And step B810, taking the attribute of the first reference alignment unit as the same element, and returning to the step of executing the first reference alignment unit for determining the second image array and the second reference alignment unit for determining the preset standard grain array based on the same element based on the preliminary alignment state when the difference value is minimum.
The attribute (row or column) of the first reference alignment unit is illustratively taken as the same element, and is based on the state of preliminary alignment at the minimum difference value (i.e., the preliminary alignment state in which there is no offset between the second image array and the preset standard grain array is possible). And returning to the step of executing the first reference alignment unit of the second image array and the second reference alignment unit of the preset standard grain array based on the same element to complete the whole alignment of the second image array and the preset standard grain array, and associating each aligned grain in the second image array and the preset standard grain array.
In addition, to achieve the above object, the present application further provides an electronic device, including: the wafer grain image reconstruction method comprises the steps of a memory, a processor and a wafer grain image reconstruction program which is stored in the memory and can run on the processor, wherein the wafer grain image reconstruction program is executed by the processor to realize the wafer grain image reconstruction method.
The specific embodiments of the electronic device in the present application are substantially the same as the embodiments of the die image reconstruction method of the wafer described above, and are not described herein again.
In addition, in order to achieve the above object, the present application further provides a readable storage medium having stored thereon a die image reconstruction program of a wafer, which when executed by a processor, implements the steps of the die image reconstruction method of a wafer as described above.
The specific embodiments of the computer readable storage medium are basically the same as the embodiments of the method for reconstructing a die image of a wafer described above, and are not described herein again.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The foregoing embodiment numbers of the present application are merely for describing, and do not represent advantages or disadvantages of the embodiments.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) as described above, including several instructions for causing a terminal device (which may be a computer, a server, or a network device, etc.) to perform the method described in the embodiments of the present application.
The foregoing description is only of the preferred embodiments of the present application, and is not intended to limit the scope of the claims, and all equivalent structures or equivalent processes using the descriptions and drawings of the present application, or direct or indirect application in other related technical fields are included in the scope of the claims of the present application.
Claims (9)
1. The method for reconstructing the crystal grain image of the wafer is characterized in that crystal grains in different areas on the wafer correspond to different local images, and comprises the following steps:
correcting a local image based on a first image array of crystal grains in the local image to obtain a corrected local image, wherein the first image array is a distribution position of the crystal grains in the local image, and the correction basis of the local image is an offset angle between the first image array and a rectangular side of the local image;
combining the corrected partial images of the partial images to obtain a complete wafer image;
correlating each grain in the complete wafer image with each grain in a preset standard grain array;
the local image is rectangular, and the step of correcting the local image based on the first image array of the crystal grains in the local image to obtain a corrected local image comprises the following steps:
determining the center coordinates of each crystal grain in the local image, wherein the center coordinates are coordinate data of geometric center points of the crystal grains in a basic coordinate system of the local image, and the basic coordinate system is constructed by taking adjacent edges of the local image as horizontal and vertical coordinate axes;
Arranging each crystal grain based on each central coordinate to obtain a first image array;
determining an offset angle of the first image array in the partial image according to a preset correction unit in the first image array, wherein the preset correction unit consists of a row of crystal grains or a column of crystal grains in the first image array;
and rotating the partial image in the opposite direction of the offset of the first image array in the partial image based on the offset angle to obtain the corrected partial image.
2. The method of claim 1, wherein the center coordinates include an abscissa and an ordinate, and wherein the step of arranging the dies based on the center coordinates to obtain the first image array comprises:
any crystal grain is obtained from the partial image and is used as a reference crystal grain;
acquiring grains in a preset range around the reference grains in the partial image to obtain a grain collection;
determining that the grain of which the difference value between the ordinate of the grain aggregate and the ordinate of the reference grain is smaller than a preset difference threshold value is in the same row with the reference grain in the first image array;
Determining that the grain of which the difference value between the abscissa of the grain aggregate set and the abscissa of the reference grain is smaller than the preset difference threshold value is in the same column with the reference grain in the first image array;
and returning to the step of acquiring any grain from the partial image as a reference grain until the row and the column of each grain in the partial image in the first image array are determined.
3. The method of reconstructing a die image of a wafer according to claim 1, wherein determining an offset angle by which the first image array is offset in the partial image according to a preset correction unit in the first image array comprises:
fitting based on the central coordinates of each crystal grain in the preset correction unit to obtain a rotation reference line;
and determining the offset angle according to the included angle between the rotation reference straight line and the coordinate axis of the basic coordinate system.
4. The method of reconstructing a die image of a wafer as recited in claim 1 wherein said step of combining corrected partial images of each of said partial images to obtain a complete wafer image comprises:
combining the corrected partial images based on the positions of the corrected partial images when the partial images are acquired to obtain a combined image;
And de-duplicating the crystal grains of the overlapped part in the combined image to obtain the complete wafer image.
5. The method of reconstructing a die image of a wafer as recited in claim 4 wherein said step of de-duplicating die of overlapping portions of said combined image to obtain said complete wafer image comprises:
if the overlapped part is formed by overlapping two groups of continuous grains, taking the short-length grain group of the two groups of grains as a target group, and removing grains overlapped with the other grain group in the target group;
if the overlapping portion is that a group of continuous grains overlaps a group of discontinuous grains, grains overlapping another group of grains in the discontinuous grains are removed.
6. The method of claim 1, wherein the step of associating each die in the complete wafer image with each die in a predetermined standard die array comprises:
determining a second image array of each die in the complete wafer image;
judging whether the number of the lines and the number of the columns of the grains in the second image array are the same as the number of the lines and the number of the columns of each grain in the preset standard grain array;
if the number of rows or columns is different, determining the same elements between the second image array and the preset standard grain array, wherein the same elements are rows or columns;
Preliminarily aligning the second image array with the preset standard die array based on the same element, wherein the preliminary alignment is to align a row or column in the second image array with a row or column in the preset standard die array;
determining a first reference alignment unit of the second image array and a second reference alignment unit of the preset standard grain array based on the same element, wherein the numbers of grains in the first reference alignment unit and the second reference alignment unit are the same, and the relative position of the first reference alignment unit relative to the second image array is consistent with the relative position of the second reference alignment unit relative to the preset standard grain array;
and aligning the grains in the first reference alignment unit and the second reference alignment unit to integrally align the second image array with the preset standard grain array, and associating the aligned grains in the second image array with the preset standard grain array.
7. The method of claim 6, wherein after the step of determining whether the number of rows and columns of dies in the second image array is the same as the number of rows and columns of dies in the predetermined standard die array, the method comprises:
If the number of rows and the number of columns are different, determining a first reference comparison unit of the second image array and a second reference comparison unit of the preset standard grain array, wherein the first reference comparison unit and the second reference comparison unit have the same attribute and are row or column, the first reference comparison unit is a middle row or a middle column in the second image array, and the second reference comparison unit is a middle row or a middle column of the preset standard grain array;
performing preliminary alignment on the second image array and the preset standard grain array so as to align the first reference alignment unit and the second reference alignment unit;
determining a difference value of the number of grains of each row or each column aligned in the second image array and the preset standard grain array;
moving the second image array by a row or column of interval distance in the vertical direction of the first reference alignment unit to form a new preliminary alignment state;
returning to execute the step of determining the difference value of the grain numbers of the alignment elements in the second image array and the preset standard grain array based on the new initial alignment state until the grain rows or grain columns in the preset range near the second reference alignment unit are aligned with the first reference alignment unit;
And taking the attribute of the first reference alignment unit as the same element, and returning to execute the step of determining the first reference alignment unit of the second image array and the second reference alignment unit of the preset standard grain array based on the same element based on the preliminary alignment state when the minimum difference value is obtained.
8. An electronic device comprising a memory, a processor, and a die image reconstruction program for a wafer stored on the memory and executable on the processor, wherein: the die image reconstruction program of a wafer, when executed by the processor, implements the steps of the die image reconstruction method of a wafer as defined in any one of claims 1 to 7.
9. A storage medium, wherein a die image reconstruction program of a wafer is stored on the storage medium, which when executed by a processor, implements the steps of the die image reconstruction method of a wafer according to any one of claims 1 to 7.
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