CN117056996B - Design method and device for low-sidelobe substrate integrated waveguide longitudinal seam antenna and electronic equipment - Google Patents
Design method and device for low-sidelobe substrate integrated waveguide longitudinal seam antenna and electronic equipment Download PDFInfo
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Abstract
The application discloses a low-sidelobe substrate integrated waveguide longitudinal joint antenna design method, a device and electronic equipment, wherein the substrate integrated waveguide longitudinal joint antenna design method comprises the following steps: holdingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAndthe method comprises the steps of carrying out a first treatment on the surface of the According to the describedAndand an admittance calculation formula, a third curve of the conductance and the susceptance changing along with the length of the gap or a fourth curve of the conductance changing along with the length of the gap is obtained, and further resonance conductance and resonance length under the bias of the gap are obtained; changing the gap bias, returning to the operation of keeping the gap bias unchanged, and executing the subsequent operation until the gap bias reaches a preset range, obtaining a curve of resonance conductance and resonance length along with the change of the gap bias, further obtaining a conductance-bias and length-bias function curve, and designing the longitudinal gap antenna of the substrate integrated waveguide. By implementing the method, the workload of optimizing the parameters of the designed longitudinal seam antenna can be reduced.
Description
Technical Field
The application relates to a low-sidelobe substrate integrated waveguide longitudinal seam antenna design method and device and electronic equipment, and belongs to the field of slot data measurement and antenna design.
Background
In the design process of a longitudinal slot antenna of a substrate integrated waveguide (Substrate Integrated Waveguide, SIW), the longitudinal slot antenna is generally designed according to given index requirements, wherein the index requirements mainly comprise working frequency, antenna gain, beam width and side lobe level; the parameters to be calculated mainly include the number of slots, the offset of each slot (the distance of the center of the slot from the SIW transmission line centerline) and the length of each slot. Calculation of resonance conductance, and function construction between resonance conductance, resonance length and gap bias becomes a key of design.
However, the existing resonant conductance calculation method is only suitable for the condition of independent gaps, the difference between the calculated conductance and the true value is large, and the workload of the subsequent longitudinal gap antenna parameter optimization is further increased.
Disclosure of Invention
In view of the foregoing, the present application provides a slot resonance conductance calculation method and apparatus, a method and apparatus for designing a slot antenna of a substrate integrated waveguide, an electronic device, a readable storage medium, a computer program product, a slot antenna of a substrate integrated waveguide, and a communication device, which improve accuracy of data and simplify measurement operations.
A first object of the present application is to provide a method for calculating a slot resonance conductance.
A second object of the present application is to provide a slot resonance conductance calculating device.
The third object of the application is to provide a method for designing a longitudinal seam antenna of a substrate integrated waveguide.
The fourth object of the application is to provide a substrate integrated waveguide longitudinal seam antenna design device.
A fifth object of the present application is to provide an electronic device.
A sixth object of the present application is to provide a readable storage medium.
A seventh object of the application is to provide a computer program product.
An eighth object of the present application is to provide a substrate integrated waveguide longitudinal slot antenna.
A ninth object of the present application is to provide a communication device.
The first object of the present application can be achieved by adopting the following technical scheme:
a method of slot resonance conductance calculation, comprising:
holdingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->；
According to the describedAnd->And an admittance calculation formula, wherein the admittance calculation formula is as follows, a first curve of the conductance and the susceptance along with the change of the length of the gap is obtained or a second curve of the conductance along with the change of the length of the gap is obtained:
，
Wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;
and obtaining the resonance conductance under the gap bias according to the first curve or the second curve.
In some embodiments, the obtaining the resonance conductance under the slot bias according to the first curve includes:
based on a first curve of susceptance changing along with the length of the gap, obtaining the resonance length under the bias of the gap according to the susceptance zero point;
obtaining resonance conductance corresponding to the resonance length based on a first curve of the conductance changing along with the length of the gap;
and obtaining the resonance conductance under the gap bias according to the second curve, wherein the resonance conductance comprises the following components:
and obtaining the resonance conductance under the bias of the gap according to the extreme point of the conductance based on a second curve of the conductance changing along with the length of the gap.
In some embodiments, the retainingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->Comprising:
enabling the gap bias to be equal to a first initial value;
making the gap length equal to a second initial value;
Based onNThe gap measuring model keeps the first initial value unchanged, and the gap length is simulated in the range including the second initial value to obtain the gap lengthAnd->。
The second object of the application can be achieved by adopting the following technical scheme:
a slot resonance conductance calculation apparatus comprising:
a first acquisition module for holdingNOf slit measuring modelsThe gap offset is unchanged, and the gap with different gap lengths is obtainedAnd->；
A first calculation module for according to theAnd->And an admittance calculation formula, wherein the admittance calculation formula is as follows, a first curve of the conductance and the susceptance along with the change of the length of the gap is obtained or a second curve of the conductance along with the change of the length of the gap is obtained:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;
and the second calculation module is used for obtaining the resonance conductance under the gap bias according to the first curve or the second curve.
The third object of the present application can be achieved by adopting the following technical scheme:
a design method of a substrate integrated waveguide longitudinal seam antenna comprises the following steps:
HoldingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->；
According to the describedAnd->And an admittance calculation formula, wherein the third curve of the conductance and the susceptance along with the change of the length of the gap or the fourth curve of the conductance along with the change of the length of the gap is obtained, and further the resonance conductance and the resonance length under the bias of the gap are obtained, and the admittance calculation formula is as follows:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;
changing the gap bias, returning to the operation of keeping the gap bias unchanged, and executing subsequent operation until the gap bias reaches a preset range to obtain a curve of resonance conductance and resonance length along with the change of the gap bias, thereby obtaining a conductance-bias and length-bias function curve;
and designing the longitudinal seam antenna of the substrate integrated waveguide according to the conductance-bias and length-bias function curves.
In some embodiments, the retainingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->Comprising:
enabling the gap bias to be equal to a first initial value;
Making the gap length equal to a second initial value;
based onNThe gap measuring model keeps the first initial value unchanged, and the gap length is simulated in the range including the second initial value to obtain the gap lengthAnd->。
In some embodiments, the designing the longitudinal seam antenna of the substrate integrated waveguide according to the conductance-bias and length-bias function curves includes:
calculating the number of gaps;
calculating the relative excitation of each gap, and further calculating the equivalent normalized conductance of each gap;
and according to the equivalent normalized conductance, the conductance-offset, the length-offset function curve and the number of slots, the design of the longitudinal slot antenna of the substrate integrated waveguide is completed.
In some embodiments, the calculating the number of slots includes:
calculating the length of the antenna according to the Taylor line source broadening factor, the beam broadening factor and the given antenna beam width;
and calculating the number of the slots according to the length of the antenna and the distance between two adjacent slots.
In some embodiments, the calculating the relative excitation of each slot, and thus the equivalent normalized conductance of each slot, comprises:
calculating the relative excitation of each gap by using chebyshev distribution or taylor distribution according to the number of the gaps and the given side lobe level;
And calculating the equivalent normalized conductance of each slot by using the sum of the equivalent normalized conductances of all slots to be equal to 1 and a slot equivalent normalized conductance calculation formula according to the relative excitation of each slot.
The fourth object of the present application can be achieved by adopting the following technical scheme:
a substrate integrated waveguide longitudinal slot antenna design apparatus comprising:
a second acquisition module for holdingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->；
A third calculation module for calculating the third calculation result according to the third calculation resultAnd->And an admittance calculation formula, wherein the third curve of the conductance and the susceptance along with the change of the length of the gap or the fourth curve of the conductance along with the change of the length of the gap is obtained, and further the resonance conductance and the resonance length under the bias of the gap are obtained, and the admittance calculation formula is as follows:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;
the change and processing module is used for changing the gap bias, returning to the operation of keeping the gap bias unchanged, and executing subsequent operation until the gap bias reaches a preset range to obtain a curve of resonance conductance and resonance length along with the change of the gap bias, and further obtaining a conductance-bias and length-bias function curve;
And the design module is used for designing the longitudinal seam antenna of the substrate integrated waveguide according to the conductance-bias and length-bias function curves.
The fifth object of the present application can be achieved by adopting the following technical scheme:
an electronic device comprises a processor and a memory for storing a program executable by the processor, wherein when the processor executes the program stored in the memory, the slot resonance conductance calculation method and/or the substrate integrated waveguide longitudinal slot antenna design method are realized.
The sixth object of the present application can be achieved by adopting the following technical scheme:
a readable storage medium storing a program which, when executed by a processor, implements the slot resonance conductance calculation method and/or the substrate integrated waveguide longitudinal slot antenna design method described above.
The seventh object of the present application can be achieved by adopting the following technical scheme:
a computer program product comprising a computer program or computer instructions which, when executed by a processor, implement the slot resonance conductance calculation method and/or the substrate integrated waveguide slot antenna design method described above.
The eighth object of the present application can be achieved by adopting the following technical scheme:
a substrate integrated waveguide longitudinal joint antenna comprises an antenna designed based on the substrate integrated waveguide longitudinal joint antenna design method.
The ninth object of the present application can be achieved by adopting the following technical scheme:
a communication device comprises an antenna designed based on the substrate integrated waveguide longitudinal seam antenna design method.
In the embodiment of the application, the electronic equipment is keptNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->The method comprises the steps of carrying out a first treatment on the surface of the The electronic device then follows said->And->And admittance calculation formula, obtaining a first curve of the conductance and the susceptance along with the change of the length of the gap or obtaining a second curve of the conductance along with the change of the length of the gap; and finally, the electronic equipment obtains the resonance conductance under the gap bias according to the first curve or the second curve. The admittance calculation formula considers the influence of the coupling between gaps on the conductance, and can improve the accuracy of the calculation result; at the same time counteractPropagation phase constant and constantsThe influence of the two is not needed to be considered, so that the calculation result is more accurate, the measurement of the propagation phase constant is omitted, and the operation is simpler and more convenient.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for calculating a slot resonance conductance according to an embodiment of the present application.
Fig. 2 is a schematic flow chart of a method for designing a longitudinal slot antenna of a substrate integrated waveguide according to an embodiment of the present application.
Fig. 3 is an exemplary diagram of five gap measurement models according to an embodiment of the present application.
FIG. 4 is a graph of conductance and susceptance as a function of slot length for a slot bias of 0.1mm provided by an embodiment of the present application.
Fig. 5 is an exemplary graph of a length-bias fit function curve provided by an embodiment of the present application.
FIG. 6 is an exemplary plot of a conductance-bias fit function curve provided by an embodiment of the present application.
Fig. 7 is an exemplary diagram of an antenna simulation model according to an embodiment of the present application.
FIG. 8 is a diagram of an embodiment of the present applicationExample graphs of curves.
Fig. 9 is an exemplary diagram of gain directions provided in an embodiment of the present application.
Fig. 10 is a schematic structural diagram of a slot resonance conductance calculating device according to an embodiment of the present application.
Fig. 11 is a schematic structural diagram of a device for designing a longitudinal slot antenna of a substrate integrated waveguide according to an embodiment of the present application.
Fig. 12 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments, and all other embodiments obtained by those skilled in the art without making any inventive effort based on the embodiments of the present application are within the scope of protection of the present application.
In the description and claims of the present application, the terms "first," "second," and the like are used for distinguishing between similar objects and not necessarily for describing a sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate, such that embodiments of the application may be practiced otherwise than as specifically illustrated and described herein, and that the "first" and "second" distinguishing between objects generally being of the same type, and not necessarily limited to the number of objects, such as the first object may be one or more. Furthermore, in the description and claims, "and" indicates at least one of the connected objects, and the character "/" generally indicates that the associated object is an "or" relationship.
Some of the terms or terminology that appear in describing the present application are applicable to the following explanation:
the substrate integrated waveguide longitudinal slot antenna is an antenna structure for realizing electromagnetic wave radiation by opening a longitudinal rectangular slot on a substrate integrated waveguide transmission line, and can be called as a substrate integrated waveguide longitudinal slot antenna or a SIW longitudinal slot antenna for short.
For a radiating slot (which may be referred to simply as a "slot"), there is a length that enables the susceptance component to be 0 and the conductance component to reach an extremum, where the slot is in a pure conductance state, and the radiating efficiency is highest, this length is referred to as the resonant length of the slot under bias, and the conductance corresponding to this length is referred to as the resonant conductance of the slot under bias.
As shown in fig. 1, an embodiment of the present application provides a flow chart of a method for calculating a slot resonance conductance. The method for calculating the gap resonance conductance is executed by the electronic equipment and can comprise the following steps:
s101, keepNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->。
In some embodiments, the retainingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->Comprising:
S1011, making the gap bias equal to the first initial value.
S1012, enabling the gap length to be equal to a second initial value.
S1013 based onNThe gap measuring model keeps the first initial value unchanged, and the gap length is simulated in the range including the second initial value to obtain the gap lengthAnd->。
S102, according to theAnd->And admittance calculation formula to obtain first curve of conductance and susceptance along with change of gap length or obtain conductance along with change of gap lengthA second curve of the slit length variation.
In some embodiments, the admittance calculation formula is as follows:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters.
S103, obtaining resonance conductance under the gap bias according to the first curve or the second curve.
In some embodiments, the obtaining the resonance conductance under the slot bias according to the first curve includes:
s1031a, based on a first curve of susceptance changing along with the length of the gap, obtaining the resonance length under the bias of the gap according to the susceptance zero point.
S1032a, obtaining the resonance conductance corresponding to the resonance length based on a first curve of the conductance along with the change of the gap length.
In some embodiments, the obtaining the resonance conductance under the slot bias according to the second curve includes:
s1031b, based on a second curve of the change of the conductance along with the length of the gap, obtaining the resonance conductance under the bias of the gap according to the extreme point of the conductance.
In the embodiment of the application, the electronic equipment is keptNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->The method comprises the steps of carrying out a first treatment on the surface of the The electronic device then follows said->And->And admittance calculation formula, obtaining a first curve of the conductance and the susceptance along with the change of the length of the gap or obtaining a second curve of the conductance along with the change of the length of the gap; and finally, the electronic equipment obtains the resonance conductance under the gap bias according to the first curve or the second curve. The admittance calculation formula considers the influence of the coupling between gaps on the conductance, and can improve the accuracy of the calculation result; at the same time, the propagation phase constant and constant are cancelledsThe influence of the two is not needed to be considered, so that the calculation result is more accurate, the measurement of the propagation phase constant is omitted, and the operation is simpler and more convenient.
As shown in fig. 2, an embodiment of the present application provides a flow chart of a method for designing a longitudinal slot antenna of a substrate integrated waveguide. The method for designing the longitudinal seam antenna of the substrate integrated waveguide is executed by electronic equipment and can comprise the following steps:
s201, keepNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->。
In some embodiments, the retainingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->Comprising:
and S2011, enabling the gap offset to be equal to a first initial value. For example, the first initial value is set to 0.1mm.
Before this step, build up in simulation softwareNAnd a slit measurement model. Illustratively, as shown in FIG. 3, five slit measurement models are established, including slit 100, port 1A, and port 2B. The simulation software may be Ansys HFSS, CST (CST STUDIO SUITE), or FEKO, but is not limited thereto.
Taking HFSS as an example, the post-processing may include the following four functions:
1. and (3) extracting results: the required data is extracted from the HFSS simulation results.
2. Data analysis: the extracted data is analyzed, such as calculating various parameters, drawing charts, making statistics, etc.
3. Visualization of results: the analysis results are visualized using a graphical tool to more intuitively understand the simulation results.
4. Parameter optimization: and adjusting and optimizing design parameters according to the post-processing result so as to meet the design requirements.
S2012, making the gap length equal to the second initial value. For example, the second initial value is set to half the waveguide wavelength.
S2013 based onNThe gap measuring model keeps the first initial value unchanged, and the gap length is simulated in the range including the second initial value to obtain the gap lengthAnd->。
In this step, the gap width is set to 0.1mm, and the gap width is set according to the requirement, and the first initial value is kept unchangedUnder a given working frequency, parameter scanning is carried out on the gap length in a range including a second initial value, and the gap lengths under different gap lengths can be calculatedAnd->。
As a preferred embodiment, the number of slits in the measurement model is at least five, i.eNAnd is more than or equal to 5. It should be noted that, a large number of experiments prove that both the resonance conductance and the resonance length decrease along with the increase of the number of the gaps; when the number of the gaps is greater than or equal to five, the resonance conductance and the resonance length tend to be stable along with the change of the number of the gaps.
S202, according to theAnd->And an admittance calculation formula to obtain a third curve of the conductance and the susceptance along with the change of the length of the gap or a fourth curve of the conductance along with the change of the length of the gap, thereby obtaining the resonance conductance and the resonance length under the bias of the gap.
In this step, the steps are performedAnd->Inputting an admittance calculation formula, extracting a real part and an imaginary part, and obtaining a third curve of the conductance and the susceptance along with the change of the length of the gap or only obtaining a fourth curve of the conductance along with the change of the length of the gap.
Illustratively, after simulation by using five slit measurement models in the HFSS, calculation is performed by using an admittance calculation formula in HFSS post-processing to obtain a third curve of conductance and susceptance changing along with the slit length, wherein the third curve comprises a fourth curve; as shown in fig. 4, a corresponding third curve is exhibited with a gap offset equal to 0.1 mm. For the third curve and the fourth curve, the length at which the conductance reaches the extreme value can be found in the curve in which the conductance varies with the length of the slit, the length being the resonance length at which the slit offset is equal to 0.1mm, and the conductance corresponding to the length being the resonance conductance at which the slit offset is equal to 0.1 mm. For the third curve, a length when susceptance is zero can be found first in the curve of susceptance with the change of the length of the slit, the length being the resonance length at which the bias of the slit is equal to 0.1mm, and then a corresponding resonance conductance can be found from the resonance length in the curve of conductance with the change of the length of the slit. As can be taken from fig. 4, the resonance length is 1.3mm and the resonance conductance is 0.0685.
Wherein, the admittance calculation formula is as follows:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters. With reference to figure 3 of the drawings,S 11 indicating that port 2B is connected to a matching load, the reflection coefficient of port 1A,S 21 indicating the transmission coefficients of ports 1A to 2B when port 2B is connected to the matching load.
S203, changing the gap bias, returning to the operation of keeping the gap bias unchanged, and executing subsequent operations until the gap bias reaches a preset range, so as to obtain a curve of resonance conductance and resonance length along with the change of the gap bias, and further obtain a conductance-bias and length-bias function curve.
In this step, the slit bias may be changed in the form of a step value. For example, the first wheel, 0.100mm; a second wheel, 0.101mm; third wheel, 0.102mm; … … the step value is set according to the requirement. And repeating the steps S201-S202 in each round until the gap offset reaches a preset range, for example, exceeding 0.2mm, stopping scanning simulation, drawing a curve of resonance conductance and resonance length changing along with the gap offset, and obtaining a conductance-offset and length-offset function curve after interpolation or fitting.
Based on the steps and examples of the embodiment, the resonant lengths and resonant conductivities under different slot offsets are calculated respectively, and fitting processing is performed, so as to obtain conductance-offset and length-offset fitting function curves as shown in fig. 5 and 6, wherein fig. 5 shows the length-offset fitting function curve, and fig. 6 shows the conductance-offset fitting function curve.
S204, designing the longitudinal seam antenna of the substrate integrated waveguide according to the conductance-bias and length-bias function curves.
In some embodiments, the designing the longitudinal seam antenna of the substrate integrated waveguide according to the conductance-bias and length-bias function curves includes:
s2041, calculating the number of gaps.
Before this step, the method further includes: acquiring a given antenna radiation index, wherein the antenna radiation index comprises a working frequencyfAntenna gainGBeam widthSide lobe levelSLL。
By way of example only, and not by way of limitation,f=77GHz， =15°，SLL=-25dB。
in some embodiments, the calculating the number of slots includes:
s20411, calculating an antenna length from the taylor line source broadening factor, the beam broadening factor, and a given antenna beam width, as follows:
,
wherein,representing the Taylor line source spread factor,>representing beam expanding factor, +. >Indicate wavelength, & lt + & gt>Representing a given beamwidth, +.>Representing the scan angle of the array beam. Here, if the design object is a SIW longitudinal slot standing wave antenna, there is no scan angle, and there is always +.>。
Further, the taylor line source broadening factor is as follows:
，
，
wherein,represents the number of equal side lobes in Taylor synthesis,R 0 representing the ratio of the main lobe to the maximum side lobe,arthe dash () represents an inverse hyperbolic cosine function.
It should be noted that the number of the substrates,R 0 and (3) withSLLNot the same parameter as the parameter,SLLdB values representing the ratio of the maximum side lobe to the main lobe, their relationship is as follows:
。
s20412, calculating the number of the slots according to the length of the antenna and the distance between two adjacent slots, wherein the following formula is as follows:
，
wherein,d s representing the spacing between two adjacent slits.
Illustratively according to=15° and steps S20411 to S20412, calculated to obtainN=10。
S2042, calculating the relative excitation of each gap, and further calculating the equivalent normalized conductance of each gap.
It should be noted that the SIW longitudinal slot antenna belongs to a linear array, and in order to achieve low side lobe, the requirement of a given side lobe level is met. Thus, each slot requires a weighted excitation. This allows the offset and length of each slot to be different.
In some embodiments, the calculating the relative excitation of each slot, and thus the equivalent normalized conductance of each slot, comprises:
s20421, calculating the relative excitation of each slit using chebyshev distribution (also called "chebyshev weighting") or taylor distribution (also called "taylor weighting") according to the number of slits and given side lobe level.
S20422, according to the relative excitation of each slot, calculating the equivalent normalized conductance of each slot by using the sum of the equivalent normalized conductances of all slots to be equal to 1 and a slot equivalent normalized conductance calculation formula.
In this step, assume that the firstiEquivalent normalized conductance of each slit isThen the corresponding slot equivalent normalized conductance calculation formula is as follows:
，
wherein,Kthe constant coefficient is represented by a constant coefficient,represent the firstiThe relative actuation of the slits.
In order for the antenna to maintain a good match, the sum of the equivalent normalized conductivities of all slots is equal to 1, i.e., the input conductivity formula for the antenna is as follows:
，
after solving the relative excitation distribution of the slot, substituting the relative excitation distribution into a slot equivalent normalized conductance calculation formula and an input conductance formula of the antenna to calculate a constant coefficientKAnd then calculate to obtain the first iEquivalent normalized conductance of the individual slots.
Illustratively according toSLL=-25dB、N=10 and steps S20421 to S20422, the relative excitation of each slit is calculated, specifically: 0.395:0.5056:0.7214:0.8993: 1: 1: 0.8993:0.7214:0.5056:0.395; and then calculating to obtain the equivalent normalized conductance of each gap, specifically: 0.0285, 0.0466, 0.0949, 0.1475, 0.1824, 0.1475, 0.0949, 0.0466, 0.0285.
S2043, according to the equivalent normalized conductance, the conductance-offset, the length-offset function curve and the number of slots, the design of the longitudinal slot antenna of the substrate integrated waveguide is completed.
In this step, the following is adoptedAnd the conductance-bias and length-bias function curves are searched to obtain +.>Corresponding gap offsetx i Then find out the gap offsetx i Corresponding resonant lengthl i And finally, the offset and the length of each gap are obtained.
In other embodiments, the data on the conductance-bias, length-bias function curves may be converted to form data for ease of review by a technician.
Based on the steps and examples of the above embodiments, the slit bias under the normalized conductance can be obtained by querying fig. 6, and the slit length under the slit bias can be obtained by querying fig. 5, where specific parameters are shown in table 1, and the parameters in the table are initial values of the parameters of the slit antenna structure.
TABLE 1 initial value table for gap size parameters
In the example, the dielectric substrate is formed by using a Roggers 5880 material, the dielectric constant is 2.2, the tangent loss angle is 0.0009, the thickness of the substrate is 0.254mm, the width of SIW is 2.4mm, the diameter of the metal cylinder is 0.25mm, and the spacing of the metal cylinders is 0.4mm.
And finally, simulating and optimizing the designed substrate integrated waveguide longitudinal joint antenna.
Illustratively, according to the parameters of the above examples, a model is built in the HFSS (see fig. 7), each parameter is optimized, and each parameter of the final antenna is shown in tables 2 and 3.
TABLE 2 SIW Structure parameters
TABLE 3 gap size parameters
As shown in FIG. 8, the simulation result of S11 is shown, the antenna achieves good matching near 77GHz, S11 is smaller than-10 dB in the frequency range of 75.5-78.54 GHz, and the relative bandwidth is about 3.9%. As shown in fig. 9, the dotted line and the solid line are gain patterns of H-plane and E-plane, respectively, the E-plane gain is 13.1dB, the beam width is 14.6 °, and the side lobe level is-26.5 dB; the H-plane gain was 1.31dB and the beamwidth was 89.6 °. From the aspects of operating frequency, beam width and sidelobe level performance, the requirements of the set indexes are basically met. The side lobe level is low from the E-plane pattern, but the front-to-back ratio is small, mainly because the waveguide structure is not an infinite good conductor plane, the electromagnetic wave will diffract along the waveguide wall, and a larger back lobe is formed at the back, so that the diffraction can be reduced by increasing the width of the PCB board.
According to the method for designing the longitudinal slot antenna of the substrate integrated waveguide, the influence of inter-slot coupling on conductance is considered through an improved admittance calculation formula, so that a conductance-bias and length-bias function curve can obtain slot bias and slot length based on independent slot resonance conductance under the condition that a plurality of slots are mutually coupled, the gap between the calculated resonance conductance and a true value is smaller, the slot bias and the slot length obtained according to the slot equivalent normalized conductance and the data of the function curve are more in accordance with the size requirement of the required design, the performance of the designed antenna is more close to a preset index, and therefore the workload of parameter optimization of the longitudinal slot antenna after design is reduced. The substrate integrated waveguide longitudinal slot antenna design method has the advantages that the conductance-bias and length-bias function curves can also obtain the slot bias and the slot length based on the resonance conductance of a single independent slot through an improved admittance calculation formula, the influence of the length of a measurement model and the propagation constant of a SIW transmission line on a calculation result is not required to be considered, the practical operation is more convenient and simple, and the mutual coupling condition of a plurality of slots is similar.
Those skilled in the art will appreciate that all or part of the steps in a method implementing the above embodiments may be implemented by a program to instruct related hardware, and the corresponding program may be stored in a computer readable storage medium.
It should be noted that although the method operations of the above embodiments are depicted in the drawings in a particular order, this does not require or imply that the operations must be performed in that particular order or that all illustrated operations be performed in order to achieve desirable results. Rather, the depicted steps may change the order of execution. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step to perform, and/or one step decomposed into multiple steps to perform.
As shown in fig. 10, an embodiment of the present application provides a schematic structural diagram of a slot resonance conductance calculating device. The slot resonance conductance calculation device may include a first obtaining module 1001, a first calculating module 1002, and a second calculating module 1003, where specific functions of the respective modules are as follows:
a first acquisition module 1001 for holdingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtained And->；
A first calculation module 1002, configured toAnd->And an admittance calculation formula, wherein the admittance calculation formula is as follows, a first curve of the conductance and the susceptance along with the change of the length of the gap is obtained or a second curve of the conductance along with the change of the length of the gap is obtained:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Showing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;
and a second calculation module 1003, configured to obtain a resonant conductance under the slot bias according to the first curve or according to the second curve.
As shown in fig. 11, an embodiment of the present application provides a structural schematic diagram of a device for designing a longitudinal slot antenna of a substrate integrated waveguide. The substrate integrated waveguide longitudinal seam antenna design device may include a second acquisition module 1101, a third calculation module 1102, a changing and processing module 1103 and a design module 1104, where specific functions of each module are as follows:
a second acquisition module 1101 for holdingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->；
A third calculation module 1102, configured toAnd->And admittance calculation formula to obtain third curve or susceptance with the change of gap length Obtaining a fourth curve of the change of the conductance along with the length of the gap, and further obtaining the resonance conductance and the resonance length under the bias of the gap, wherein the admittance calculation formula is as follows:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;
the change and processing module 1103 is configured to change the slot bias, return to an operation of keeping the slot bias unchanged, and perform a subsequent operation until the slot bias reaches a preset range, obtain a curve of resonance conductance and resonance length changing along with the slot bias, and further obtain a conductance-bias and length-bias function curve;
and the design module 1104 is used for designing the longitudinal seam antenna of the substrate integrated waveguide according to the conductance-bias and length-bias function curves.
As shown in fig. 12, an embodiment of the present application provides a schematic structural diagram of an electronic device. The electronic device may include a processor 1202, memory, input devices 1203, display devices 1204, and a network interface 1205 connected through a system bus 1201. The processor 1202 is configured to provide computing and control capabilities, where the memory includes a nonvolatile storage medium 1206 and an internal memory 1207, where the nonvolatile storage medium 1206 stores an operating system, a computer program, and a database, and the internal memory 1207 provides an environment for the operating system and the computer program in the nonvolatile storage medium 1206 to run, and the computer program when executed by the processor 1202 implements the slot resonance conductance calculation method and/or the substrate integrated waveguide slot antenna design method of the foregoing embodiments.
The embodiment of the application provides a storage medium. The storage medium is a computer readable storage medium, which stores a computer program, and when the computer program is executed by a processor, the method for calculating the slot resonance conductance and/or the method for designing the longitudinal slot antenna of the substrate integrated waveguide according to the above embodiments are implemented.
The computer readable storage medium of the present embodiment may be a computer readable signal medium or a computer readable storage medium, or any combination of the two. The computer readable storage medium can be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or a combination of any of the foregoing. More specific examples of the computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
In this embodiment, a computer-readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. In the present embodiment, however, the computer-readable signal medium may include a data signal propagated in baseband or as part of a carrier wave, with a computer-readable program embodied therein. Such a propagated data signal may take any of a variety of forms, including, but not limited to, electro-magnetic, optical, or any suitable combination of the foregoing. A computer readable signal medium may also be any computer readable storage medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. A computer program embodied on a computer readable storage medium may be transmitted using any appropriate medium, including but not limited to: electrical wires, fiber optic cables, RF (radio frequency), and the like, or any suitable combination of the foregoing.
The computer readable storage medium may be written in one or more programming languages, including an object oriented programming language such as Java, python, C ++ and conventional procedural programming languages, such as the C-language or similar programming languages, or combinations thereof for performing the present embodiments. The program may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any kind of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or may be connected to an external computer (for example, through the Internet using an Internet service provider).
An embodiment of the present application provides a computer program product, where the computer program product includes a computer program or computer instructions, and when the computer program or computer instructions are executed by a processor, implement the slot resonance conductance calculation method of the foregoing embodiment and/or the method for designing a longitudinal slot antenna of a substrate integrated waveguide of the foregoing embodiment.
The embodiment of the application provides a substrate integrated waveguide longitudinal seam antenna. The substrate integrated waveguide longitudinal slot antenna comprises an antenna designed based on the substrate integrated waveguide longitudinal slot antenna design method of the embodiment.
The embodiment of the application provides communication equipment. The communication device comprises an antenna designed based on the substrate integrated waveguide longitudinal seam antenna design method of the embodiment.
The above-mentioned embodiments are only preferred embodiments of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can make equivalent substitutions or modifications according to the technical solution and the inventive concept of the present application within the scope of the present application disclosed in the present application patent, and all those skilled in the art belong to the protection scope of the present application.
Claims (12)
1. A method of slot resonance conductance calculation, the method comprising:
HoldingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->；
According to the describedAnd->And an admittance calculation formula, wherein the admittance calculation formula is as follows, a first curve of the conductance and the susceptance along with the change of the length of the gap is obtained or a second curve of the conductance along with the change of the length of the gap is obtained:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;S 11 indicating the reflection coefficient of the port 1 when the port 2 is connected with a matched load;S 21 representing the transmission coefficients of the ports 1 to 2 when the port 2 is connected with the matched load;
and obtaining the resonance conductance under the gap bias according to the first curve or the second curve.
2. The method of claim 1, wherein said deriving the resonant conductance under the slot bias from the first curve comprises:
based on a first curve of susceptance changing along with the length of the gap, obtaining the resonance length under the bias of the gap according to the susceptance zero point;
obtaining resonance conductance corresponding to the resonance length based on a first curve of the conductance changing along with the length of the gap;
And obtaining the resonance conductance under the gap bias according to the second curve, wherein the resonance conductance comprises the following components:
and obtaining the resonance conductance under the bias of the gap according to the extreme point of the conductance based on a second curve of the conductance changing along with the length of the gap.
3. The method for designing the longitudinal seam antenna of the substrate integrated waveguide is characterized by comprising the following steps:
holdingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->；
According to the describedAnd->And an admittance calculation formula, wherein the third curve of the conductance and the susceptance along with the change of the length of the gap or the fourth curve of the conductance along with the change of the length of the gap is obtained, and further the resonance conductance and the resonance length under the bias of the gap are obtained, and the admittance calculation formula is as follows:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;S 11 indicating the reflection coefficient of the port 1 when the port 2 is connected with a matched load;S 21 representing the transmission coefficients of the ports 1 to 2 when the port 2 is connected with the matched load;
changing the gap bias, returning to the operation of keeping the gap bias unchanged, and executing subsequent operation until the gap bias reaches a preset range to obtain a curve of resonance conductance and resonance length along with the change of the gap bias, thereby obtaining a conductance-bias and length-bias function curve;
And designing the longitudinal seam antenna of the substrate integrated waveguide according to the conductance-bias and length-bias function curves.
4. A method according to any one of claims 1 and 3, wherein the holding is performedNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->Comprising:
enabling the gap bias to be equal to a first initial value;
making the gap length equal to a second initial value;
based onNThe gap measuring model keeps the first initial value unchanged, and the gap length is simulated in the range including the second initial value to obtain the gap lengthAnd->。
5. The method of claim 3, wherein the designing the substrate integrated waveguide longitudinal slot antenna according to the conductance-bias and length-bias function curves comprises:
calculating the number of gaps;
calculating the relative excitation of each gap, and further calculating the equivalent normalized conductance of each gap;
and according to the equivalent normalized conductance, the conductance-offset, the length-offset function curve and the number of slots, the design of the longitudinal slot antenna of the substrate integrated waveguide is completed.
6. The method of claim 5, wherein the calculating the number of slots comprises:
Calculating the length of the antenna according to the Taylor line source broadening factor, the beam broadening factor and the given antenna beam width;
and calculating the number of the slots according to the length of the antenna and the distance between two adjacent slots.
7. The method of claim 5, wherein calculating the relative excitation of each slot, and thereby calculating the equivalent normalized conductance of each slot, comprises:
calculating the relative excitation of each gap by using chebyshev distribution or taylor distribution according to the number of the gaps and the given side lobe level;
and calculating the equivalent normalized conductance of each slot by using the sum of the equivalent normalized conductances of all slots to be equal to 1 and a slot equivalent normalized conductance calculation formula according to the relative excitation of each slot.
8. A slot resonance conductance calculation apparatus, comprising:
a first acquisition module for holdingNThe gap offset of each gap measurement model is unchanged, and different gap lengths are obtained
Lower part (C)And->；
A first calculation module for according to theAnd->And admittance calculation formula to obtain conductance andthe first curve of susceptance along with the change of the length of the gap or the second curve of conductance along with the change of the length of the gap is obtained, and the admittance calculation formula is as follows:
，
Wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; />Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;S 11 indicating the reflection coefficient of the port 1 when the port 2 is connected with a matched load;S 21 representing the transmission coefficients of the ports 1 to 2 when the port 2 is connected with the matched load;
and the second calculation module is used for obtaining the resonance conductance under the gap bias according to the first curve or the second curve.
9. The utility model provides a substrate integrated waveguide longitudinal joint antenna design device which characterized in that includes:
a second acquisition module for holdingNThe gap bias of each gap measurement model is unchanged, and the gap bias under different gap lengths is obtainedAnd->；
A third calculation module for calculating the third calculation result according to the third calculation resultAnd->And an admittance calculation formula, wherein the third curve of the conductance and the susceptance along with the change of the length of the gap or the fourth curve of the conductance along with the change of the length of the gap is obtained, and further the resonance conductance and the resonance length under the bias of the gap are obtained, and the admittance calculation formula is as follows:
，
wherein,indicating admittance (I)>Indicating electrical conductance,/->The susceptance is indicated as such,jrepresenting an imaginary symbol;Nthe number of the gaps is represented as a positive integer; / >Representing a measurement modelS 11 Parameters (I)>Representing a measurement modelS 21 Parameters;S 11 indicating the reflection coefficient of the port 1 when the port 2 is connected with a matched load;S 21 representing the transmission coefficients of the ports 1 to 2 when the port 2 is connected with the matched load;
the change and processing module is used for changing the gap bias, returning to the operation of keeping the gap bias unchanged, and executing subsequent operation until the gap bias reaches a preset range to obtain a curve of resonance conductance and resonance length along with the change of the gap bias, and further obtaining a conductance-bias and length-bias function curve;
and the design module is used for designing the longitudinal seam antenna of the substrate integrated waveguide according to the conductance-bias and length-bias function curves.
10. A substrate integrated waveguide longitudinal slot antenna, characterized by comprising an antenna designed based on the method of any one of claims 3-7.
11. An electronic device comprising a processor and a memory for storing a program executable by the processor, wherein the processor implements the method of any one of claims 1-7 when executing the program stored by the memory.
12. A readable storage medium storing a program, wherein the program, when executed by a processor, implements the method of any one of claims 1 to 7.
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| JP2009239858A (en) * | 2008-03-28 | 2009-10-15 | Mitsubishi Electric Corp | Waveguide slot array antenna |
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| JP2009239858A (en) * | 2008-03-28 | 2009-10-15 | Mitsubishi Electric Corp | Waveguide slot array antenna |
| CN101806836A (en) * | 2010-03-15 | 2010-08-18 | 中国电子科技集团公司第十研究所 | Method for analyzing MCM+MOM admittance error of plate leaky antenna |
| CN115995697A (en) * | 2023-03-22 | 2023-04-21 | 四川航天职业技术学院(四川航天高级技工学校) | Slot area array antenna and design method thereof |
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