CN117051368B - Preparation method of strontium niobate-doped titanate film and strontium niobate-doped titanate film - Google Patents
Preparation method of strontium niobate-doped titanate film and strontium niobate-doped titanate film Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 229910052712 strontium Inorganic materials 0.000 title claims abstract description 37
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 title claims abstract description 36
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 239000010408 film Substances 0.000 claims abstract description 212
- 238000004544 sputter deposition Methods 0.000 claims abstract description 156
- 239000010936 titanium Substances 0.000 claims abstract description 142
- 239000010955 niobium Substances 0.000 claims abstract description 101
- 239000000203 mixture Substances 0.000 claims abstract description 81
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 62
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 58
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 28
- 239000013077 target material Substances 0.000 claims abstract description 26
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Inorganic materials [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 claims description 45
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 17
- 230000007423 decrease Effects 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- HFLAMWCKUFHSAZ-UHFFFAOYSA-N niobium dioxide Chemical group O=[Nb]=O HFLAMWCKUFHSAZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 4
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical group O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims description 3
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 3
- DUSBUJMVTRZABV-UHFFFAOYSA-M [O-2].O[Nb+4].[O-2] Chemical group [O-2].O[Nb+4].[O-2] DUSBUJMVTRZABV-UHFFFAOYSA-M 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 abstract description 46
- 239000000463 material Substances 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 239000003990 capacitor Substances 0.000 abstract description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 46
- 238000005546 reactive sputtering Methods 0.000 description 38
- 239000000758 substrate Substances 0.000 description 31
- 230000000052 comparative effect Effects 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000003980 solgel method Methods 0.000 description 8
- 229910002367 SrTiO Inorganic materials 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- RXSHXLOMRZJCLB-UHFFFAOYSA-L strontium;diacetate Chemical compound [Sr+2].CC([O-])=O.CC([O-])=O RXSHXLOMRZJCLB-UHFFFAOYSA-L 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KHKWDWDCSNXIBH-UHFFFAOYSA-N [Sr].[Pb] Chemical compound [Sr].[Pb] KHKWDWDCSNXIBH-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 108010025899 gelatin film Proteins 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- HJSAVSHUKKYRIX-UHFFFAOYSA-N 2-hydroxypropane-1,2,3-tricarboxylic acid;niobium Chemical compound [Nb].OC(=O)CC(O)(C(O)=O)CC(O)=O HJSAVSHUKKYRIX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- -1 lanthanum aluminate Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001453 impedance spectrum Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000009149 molecular binding Effects 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The application relates to the technical field of film materials, in particular to a preparation method of a strontium titanate doped niobium film and the strontium titanate doped niobium film, wherein the film comprises the following element components: srNbxTi 1‑x O 3 Wherein x=0.001 to 0.05; the film is prepared by a magnetron sputtering method, the magnetron sputtering adopts a target material containing strontium, niobium and titanium elements, and the sputtering power and the sputtering time of the target material are controlled during the magnetron sputtering, so that the element composition ratio of the sputtered film meets the requirements; the thickness of the prepared film is more than or equal to 100nm, and the maximum dielectric constant of the film is more than 1 multiplied by 10 4 The method comprises the steps of carrying out a first treatment on the surface of the The space group of the thin film crystal is Pm-3m, and SrNb provided by the invention x Ti 1‑x O 3 The film has wide application potential in the aspects of super capacitors, conductive electrodes and the like, and the sputtering target used in the preparation mode is various in combination, simple in manufacturing process and low in manufacturing cost, and is beneficial to industrial large-scale popularization.
Description
Technical Field
The invention relates to the technical field of film materials, in particular to a preparation method of a strontium titanate doped niobium film and the strontium titanate doped niobium film.
Background
The strontium titanate film doped with niobium is a novel multifunctional film material, and is widely applied to the fields of electronics, electric power, aerospace, automobiles, medical treatment and the like due to the excellent electromagnetic shielding performance, good thermal stability and corrosion resistance, and is a multifunctional material with wide application and development prospect.
The most commonly used preparation method of strontium titanate doped film materials is sol-gel method, which can prepare films with good dielectric properties. However, the spin coating process is only suitable for laboratories, is not beneficial to industrial mass production and cannot accurately control the thickness of the film.
CN102888586A discloses a preparation method of a strontium lead titanate film and the prepared strontium lead titanate film with bottom electricityThe strontium lead titanate film is prepared on the polar substrate by utilizing an in-situ radio frequency magnetron sputtering method, the substrate temperature is heated to 200-500 ℃ in the film preparation process, and sputtering and film crystallization are carried out at the substrate temperature to prepare the film. CN115595534A discloses a conductive lanthanum aluminate/strontium titanate film and a preparation method thereof, which is prepared by preparing the conductive lanthanum aluminate/strontium titanate film by using SrTiO 3 A layer of LaAlO is grown on the substrate 3 Thin films, thereby forming heterostructures with conductive properties.
However, the magnetron sputtering method is not adopted to prepare the strontium titanate doped film, and the components, preparation process parameters and the like in the preparation process are not researched so as to be suitable for industrial mass production and realize accurate control of the film thickness.
Disclosure of Invention
In view of the above, the present invention aims to provide a method for preparing a strontium titanate doped niobium film, the prepared strontium titanate doped niobium film and application thereof, which are based on various sputtering target combinations, and a magnetron sputtering film-forming process is adopted to prepare a high-quality strontium titanate doped niobium film with a dielectric constant reaching ten thousand grades, stable performance and uniform film thickness.
The complete technical scheme of the invention comprises the following steps:
a preparation method of a strontium titanate film doped with niobium comprises the following elements: srNb x Ti 1-x O 3 The method comprises the steps of carrying out a first treatment on the surface of the The film is prepared by a magnetron sputtering method, the magnetron sputtering adopts a target material containing strontium, niobium and titanium elements, and the sputtering power and the sputtering time of the target material are controlled during the magnetron sputtering, so that the element composition ratio of the sputtered film accords with Sr: ti: nb: o=1: (1-x): x:3, wherein x=0.001 to 0.05;
the thickness of the prepared film is more than or equal to 100nm, and the dielectric constant of the film at room temperature is more than 1 multiplied by 10 4 The method comprises the steps of carrying out a first treatment on the surface of the The space group of the thin film crystal is Pm-3m.
Further, the grain size of the film is 4-12nm, and the average grain size is about 5nm.
In some embodiments, the targets containing strontium, niobium, and titanium elements include a strontium source target, a niobium source target, and a titanium source target; the strontium source target, the niobium source target and the titanium source target are oxide targets or metal targets.
Further, the strontium source target is Sr target, srO target or SrCO 3 A target; the niobium source target material is a Nb target, a NbO target and NbO 2 Target, nb 2 O 3 Targets or Nb 2 O 5 A target; the titanium source target is Ti target or TiO target 2 A target; oxygen in the film is from an oxide target or oxygen-argon mixed gas introduced in the magnetron sputtering process.
Further, the optional combinations of targets include:
（1）SrO+NbO+TiO 2 ；
（2）SrO+NbO 2 +TiO 2 ；
（3）SrO+Nb 2 O 3 +TiO 2 ；
（4）SrO+Nb 2 O 5 +TiO 2 ；
（5）SrO+Nb+TiO 2 ；
（6）SrO+NbO+Ti；
（7）SrO+NbO 2 +Ti；
（8）SrO+Nb 2 O 3 +Ti；
（9）SrO+Nb 2 O 5 +Ti；
（10）SrO+Nb+Ti；
（11）SrCO 3 +NbO+TiO 2 ；
（12）SrCO 3 +NbO 2 +TiO 2 ；
（13）SrCO 3 +Nb 2 O 3 +TiO 2 ；
（14）SrCO 3 +Nb 2 O 5 +TiO 2 ；
（15）SrCO 3 +Nb+TiO 2 ；
（16）SrCO 3 +NbO+Ti；
（17）SrCO 3 +NbO 2 +Ti；
（18）SrCO 3 +Nb 2 O 3 +Ti；
（19）SrCO 3 +Nb 2 O 5 +Ti；
（20）SrCO 3 +Nb+Ti；
（21）Sr+NbO+TiO 2 ；
（22）Sr+NbO 2 +TiO 2 ；
（23）Sr+Nb 2 O 3 +TiO 2 ；
（24）Sr+Nb 2 O 5 +TiO 2 ；
（25）Sr+Nb+TiO 2 ；
（26）Sr+NbO+Ti；
（27）Sr+NbO 2 +Ti；
（28）Sr+Nb 2 O 3 +Ti；
（29）Sr+Nb 2 O 5 +Ti；
（30）Sr+Nb+Ti。
further, the sputtering power control mode of each target material in the magnetron sputtering process is as follows: firstly, calculating the equivalent weights (the number of strontium, niobium and titanium in each atom or molecule) of strontium, niobium and titanium of various targets (metal or oxides with different positions), calculating the binding force of each molecule and the sputtering/deposition speed, and calibrating and verifying each target to obtain the relation of the thickness of a sputtering film of each target along with the sputtering power or the sputtering time. And setting a direct current power supply for a pure metal target material and a radio frequency power supply for a metal oxide target material by combining a calibration result, and adopting the following sputtering power control mode to achieve the same sputtering thickness under the condition of keeping the distance between the target material and a base, the gas flow, the substrate temperature and the like unchanged:
in the method, in the process of the invention,the sputtering power when the strontium source target is metallic strontium,the sputtering power when the strontium source target is strontium oxide,sputtering power when the strontium source target is strontium carbonate;
the sputtering power is the sputtering power when the niobium source target is metal niobium,the sputtering power is the sputtering power when the niobium source target is niobium monoxide,the sputtering power is the sputtering power when the niobium source target is niobium dioxide,the sputtering power is the sputtering power when the niobium source target is niobium trioxide,the sputtering power is the sputtering power when the niobium source target is niobium pentoxide;
the sputtering power is the sputtering power when the titanium source target is metallic titanium,the sputtering power is the sputtering power when the titanium source target is titanium oxide.
In some embodiments, the targets containing strontium, niobium, and titanium are alloy targets+metal targets.
Further, the alloy target material and the metal target material are one of the following three combinations:
（1）SrTi 1-x +Nb；
（2）SrNb x +Ti；
（3）Nb x Ti 1-x +Sr；
wherein x=0.001 to 0.05.
In some embodiments, the targets containing strontium, niobium, and titanium elements are composite targets having the following composition: srNb x Ti 1-x O 3 。
In some embodiments, the x=0.005 to 0.04.
Further, the dielectric constant of the film at room temperature is 2×10, wherein x=0.01 to 0.02 4 ～5×10 4 Between them.
The strontium titanate film doped with niobium prepared by the method comprises the following element components: srNb x Ti 1-x O 3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the prepared film is more than or equal to 100nm, and the dielectric constant of the film at room temperature is more than 1 multiplied by 10 4 The method comprises the steps of carrying out a first treatment on the surface of the Specifically, when the value of x is greater than 0.001, the dielectric constant of the film increases to about 2×10 at room temperature 4 The method comprises the steps of carrying out a first treatment on the surface of the As the value of x increases, the dielectric constant at room temperature increases further, reaching a peak at x=0.015, about 5×10 4 When x exceeds 0.015, the dielectric constant at room temperature decreases.
The grain size of the film is 4-12nm, and the average grain size is about 5nm.
Further, XRD diffraction angles of the thin film crystal are 27.05 degrees, 31.40 degrees, 45.15 degrees, 56.15 degrees, 65.95 degrees, 75.00 degrees and 83.69 degrees, and the XRD diffraction angles are respectively matched with characteristic diffraction peaks of crystal faces (100), (011), (002), (112), (022), (013) and (222); the space group is Pm-3m.
Further, the dielectric constant of the film tends to change with temperature: the dielectric constant of the film gradually decreases from 13923 to 13460 over the temperature range from-100 ℃ to-41 ℃. However, when the temperature was lowered to-41 ℃, a change in the trend of the dielectric constant was observed. The dielectric constant of the film decreases further with increasing temperature from 13460 to 10966 at temperatures between-41 ℃ and 134 ℃. And the dielectric constant tends to be stable between 134 ℃ and 158 ℃. Subsequently, from 158 ℃ to 296 ℃, the dielectric constant again decreases with increasing temperature, from 10969 to 10268.
The dielectric loss of the film has the following change trend along with temperature: the dielectric loss gradually decreases from 0.33 to 0.3 with the temperature rise between-100 ℃ and-54 ℃. When the temperature reaches-54 ℃, the change speed of dielectric loss begins to be increased, and the dielectric loss of the film is reduced from 0.3 to 0.05 along with the temperature rise from-54 ℃ to 120 ℃. However, at 120 ℃, we note that the trend of dielectric loss changes at the inflection point. The dielectric loss of the film increases from 0.05 to 0.33 with increasing temperature from 120 ℃ to 296 ℃.
Preferably, the x=0.005 to 0.04.
More preferably, the dielectric constant of the film at room temperature is 2×10, wherein x=0.01 to 0.02 4 ～5×10 4 Between them.
The strontium titanate doped niobium film is applied to super capacitors and conductive electrodes.
The beneficial effects of the invention are as follows:
1. the high-quality strontium niobate-doped titanate film with the dielectric constant reaching ten thousand grades, stable performance and uniform film thickness can be prepared by adopting a magnetron sputtering process suitable for industrial large-scale application and a mode of combining various sputtering target materials and adjusting experimental parameters of sputtering reaction.
2. The method can adopt a mode of combining various sputtering targets, the targets and sputtering conditions have various options, the synthesis strategy is more diversified, and the application scene is wider; 2. the adoption of the magnetron sputtering film-making process is beneficial to the yield control and mass popularization in the mass production stage.
3. The invention also provides application of the strontium titanate doped niobium film.
Drawings
FIG. 1 is a graph of test results of an X-ray low angle glancing experiment performed on a prepared film according to some embodiments of the present invention.
FIG. 2 is a graph of test results of Scanning Electron Microscope (SEM) characterization experiments performed on the prepared films, according to some embodiments of the present invention.
FIG. 3 is a graph of the results of dielectric constant measurements performed on films at frequencies of 1kHz at-100 to 300 ℃ in accordance with some embodiments of the present invention.
FIG. 4 is a graph of dielectric loss results from a film tested at a frequency of 1kHz at-100 to 300 ℃ in accordance with some embodiments of the invention.
Detailed Description
The strontium titanate doped film is made of strontium titanate doped with niobium, has excellent dielectric properties, and can be used for packaging and protecting electronic devices; the strontium titanate film doped with niobium has good thermal stability, can bear high-temperature environment, has strong corrosion resistance, and can effectively prevent damage of electronic devices; in addition, the film has good electromagnetic shielding performance, can effectively inhibit external electromagnetic interference and protects the safety performance of electronic devices.
The most commonly used preparation method of the strontium titanate doped film is a sol-gel method, wherein the key step of the sol-gel method is to dissolve solute in a solvent, then add the solute into the gel, finally evenly coat the gel on a substrate and cure under proper conditions to form the film. The method can prepare the strontium titanate doped film with good dielectric properties, but the yield of the method is poor, and the product yield is only about 40 percent as the traditional casting method is adopted at present.
Based on this, in the embodiment of the present invention, a high dielectric constant strontium titanate doped film is first provided, and the element components of the strontium titanate doped film are: srNb x Ti 1-x O 3 The element composition ratio Sr: ti: nb: o=1: (1-x): x:3, wherein x=0.001 to 0.05. Through the design of element components, the dielectric constant of the film reaches over ten thousand grades. Preferably, x=0.005 to 0.04; more preferably, the dielectric constant of the film is 2×10, wherein x=0.01 to 0.02 4 ～5×10 4 Between them. After photonic sintering into crystalline state, the diffraction peaks are indexed by X-ray diffraction pattern General Structure Analysis System (GSAS) software obtained by an X-ray diffractometer, as shown in figure 1Diffraction angles of 27.05 degrees, 31.40 degrees, 45.15 degrees, 56.15 degrees, 65.95 degrees, 75.00 degrees and 83.69 degrees are respectively matched with characteristic diffraction peaks of (100), (011), (002), (112), (022), (013) and (222) crystal faces; and analyzing and judging the space group as Pm-3m (No. 221). Meanwhile, the grain size range is 4-12nm through a scanning electron microscope, the average grain size is about 5nm, the grain size is obviously lower than the previously reported grain size of 20nm, the grain arrangement on the surface of the film is more dense, and no obvious uneven phenomenon exists, as shown in figure 2.
Film impedance spectra (real part impedance Z '; imaginary part impedance Z ') were obtained by electrochemical workstation measurements, and film dielectric constant ε=2 kd/(SfZ ') and dielectric loss D=Z '/Z ', where k is Boltzmann constant, D is film thickness, S is film cross-sectional area, and f is test frequency.
As shown in fig. 3, the dielectric constant of the film has a trend of change with temperature: the dielectric constant of the film gradually decreases from 13923 to 13460 over the temperature range from-100 ℃ to-41 ℃. However, when the temperature was lowered to-41 ℃, a change in the trend of the dielectric constant was observed. The dielectric constant of the film decreases further with increasing temperature from 13460 to 10966 at temperatures between-41 ℃ and 134 ℃. And the dielectric constant tends to be stable between 134 ℃ and 158 ℃. Subsequently, from 158 ℃ to 296 ℃, the dielectric constant again decreases with increasing temperature, from 10969 to 10268.
As shown in fig. 4, the change in dielectric loss of the film with temperature was also studied. The dielectric loss gradually decreases from 0.33 to 0.3 with the temperature rise between-100 ℃ and-54 ℃. When the temperature reaches-54 ℃, the change speed of dielectric loss begins to be increased, and the dielectric loss of the film is reduced from 0.3 to 0.05 along with the temperature rise from-54 ℃ to 120 ℃. However, at 120 ℃, we note that the trend of dielectric loss changes at the inflection point. The dielectric loss of the film increases from 0.05 to 0.33 with increasing temperature from 120 ℃ to 296 ℃.
Further, in order to reduce the influence of the interface reaction on the film performance, the thickness of the strontium titanate doped niobium filmThe degree is defined as not less than 100nm. SrNb provided by the embodiment of the invention x Ti 1-x O 3 The film has an ultrahigh dielectric constant, the average grain size is about 5nm, the average grain size is obviously lower than the grain size of 20nm reported before, and the special change rule of the dielectric constant and the power-on loss under the condition of temperature change (along with the increase of temperature) is the film of the invention which has wide application potential in the aspects of super capacitors, conductive electrodes and the like.
Further, the embodiment of the invention also provides a preparation method of the strontium titanate doped niobate thin film, which is based on various sputtering target combinations, adopts a magnetron sputtering film-forming process, and replaces SrTiO with Nb 3 Doping a part of Ti to prepare SrNb x Ti 1-x O 3 The method can improve the yield of the product while obtaining high dielectric constant, and the sputtering target used in the preparation mode has various combinations, simple manufacturing process and low manufacturing cost, and is beneficial to industrialized popularization and application.
The technical features and advantages of the present invention will be described in more detail in the following in conjunction with the several embodiments so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making clear and defining the scope of the present invention.
Wherein the sputter target combinations in examples 1-30 are oxide targets + metal targets, and the strontium source in such a formulation is selected from the group consisting of Sr targets, srO targets, or SrCO 3 A target; the niobium source is selected from Nb target, nbO 2 Target, nb 2 O 3 Targets or Nb 2 O 5 A target; the titanium source is selected from Ti target or TiO 2 A target; the oxygen source can be an oxide target or a proper amount of oxygen-argon mixed gas is introduced in the reactive sputtering process.
In the sputtering power control method of the formula, firstly, the equivalent weights (the number of strontium, niobium and titanium in each atom or molecule) of strontium, niobium and titanium of various targets (metal or oxides with different valence positions) are calculated, and the respective molecular binding force and sputtering/deposition speed are calculated, and the relationship of the sputtering film thickness of each target with the sputtering power or sputtering time is obtained by calibrating and verifying each target. And setting a direct current power supply for a pure metal target material and a radio frequency power supply for a metal oxide target material by combining a calibration result, and adopting the following sputtering power control mode to achieve the same sputtering thickness under the condition of keeping the distance between the target material and a base, the gas flow, the substrate temperature and the like unchanged:
in the method, in the process of the invention,the sputtering power when the strontium source target is metallic strontium,the sputtering power when the strontium source target is strontium oxide,sputtering power when the strontium source target is strontium carbonate;
the sputtering power is the sputtering power when the niobium source target is metal niobium,the sputtering power is the sputtering power when the niobium source target is niobium monoxide,the sputtering power is the sputtering power when the niobium source target is niobium dioxide,the sputtering power is the sputtering power when the niobium source target is niobium trioxide,the sputtering power is the sputtering power when the niobium source target is niobium pentoxide;
the sputtering power is the sputtering power when the titanium source target is metallic titanium,the sputtering power is the sputtering power when the titanium source target is titanium oxide.
The specific calibration method can be as follows: before sputtering, a part of the surface of the substrate material is covered, and information such as the distance between the target and the substrate, the sputtering power of the target position, the gas flow and the like is recorded. After the sputtering is finished, the covering part and the non-covering part of the substrate material are measured by a step instrument, and the thickness d of the sputtered film is calculated. The thickness d of the sputtered film is linearly and positively correlated with the target sputtering power P or sputtering time t. When the formal three-target co-sputtering is performed, the conditions such as the distance between the target and the base, the gas flow, the substrate temperature and the like are kept unchanged, the sputtering power and the sputtering time t of the target are controlled in the mode, the sputtering thickness of each target can be accurately controlled, and the element composition ratio Sr of the sputtered film is satisfied: ti: nb: o=1: (1-x): x:3.
example 1
In this embodiment, the sputtering target composition is SrO+NbO+TiO 2 The working power supplies are all radio frequency power supplies, and the mixed gas proportion is Ar 2 ：O 2 =3: 1 (total flow rate 40 sccm), the substrate temperature was 300 ℃. Determining the deposition rate of SrO to be 100nm/h (300W) by adopting the method; the deposition rate of NbO is 100nm/h (300W); tiO (titanium dioxide) 2 The deposition rate of (2) was 80nm/h (300W). Therefore, during formal sputtering, the power supply power of the three targets is adjusted to SrO (300W), nbO (15W) and TiO by adopting the conditions of the same gas flow rate proportion and substrate temperature as the calibration 2 (375W) and the reactive sputtering time period was 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.999:0.001:3.
example 2
In this embodiment, the sputtering target composition is SrO+NbO 2 +TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.98:0.02:3.
example 3
In this embodiment, the sputtering target composition is SrO+Nb 2 O 3 +TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.95:0.05:3.
example 4
In this embodiment, the sputtering target composition is SrO+Nb 2 O 5 +TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.96:0.04:3.
example 5
In this embodiment, the sputtering target composition is SrO+Nb+TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.985:0.015:3.
example 6
In this embodiment, the sputtering target material combination is sro+nbo+ti, and the preparation method is similar to that of embodiment 1, and in the formal sputtering, the power of the three targets is set in the foregoing manner, and the reactive sputtering time period is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.99:0.01:3.
example 7
In this embodiment, sputteringThe target material combination is SrO+NbO 2 +Ti, similar to example 1, was prepared by setting the three target power supply in the manner described above for a reactive sputtering period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.99:0.01:3.
example 8
In this embodiment, the sputtering target composition is SrO+Nb 2 O 3 +Ti, similar to example 1, was prepared by setting the three target power supply in the manner described above for a reactive sputtering period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.999:0.001:3.
example 9
In this embodiment, the sputtering target composition is SrO+Nb 2 O 5 +Ti, similar to example 1, was prepared by setting the three target power supply in the manner described above for a reactive sputtering period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.995:0.005:3.
example 10
In this embodiment, the sputtering target material combination is sro+nb+ti, and the preparation method is similar to that of embodiment 1, and in the formal sputtering, the power adjustment of the three targets is set in the foregoing manner, and the reactive sputtering time period is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.985:0.015:3.
example 11
In this embodiment, the sputtering target composition is SrCO 3 +NbO+TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.985:0.015:3.
example 12
In this embodiment, the sputtering target composition is SrCO 3 +NbO 2 +TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.995:0.005:3.
example 13
In this embodiment, the sputtering target composition is SrCO 3 +Nb 2 O 3 +TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.985:0.015:3.
example 14
In this embodiment, the sputtering target composition is SrCO 3 +Nb 2 O 5 +TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.985:0.015:3.
example 15
In this embodiment, the sputtering target composition is SrCO 3 +Nb+TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.985:0.015:3.
example 16
In this embodiment, the sputtering target composition is SrCO 3 The preparation method of +NbO+Ti is similar to that of example 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.995:0.005:3.
example 17
This embodimentWherein the sputtering target material combination is SrCO 3 +NbO 2 +Ti, similar to example 1, was prepared by setting the three target power supply in the manner described above for a reactive sputtering period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.98:0.02:3.
example 18
In this embodiment, the sputtering target composition is SrCO 3 +Nb 2 O 3 +Ti, similar to example 1, was prepared by setting the three target power adjustments in the manner described above for a reactive sputtering time period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.995:0.005:3.
example 19
In this embodiment, the sputtering target composition is SrCO 3 +Nb 2 O 5 +Ti, similar to example 1, was prepared by setting the three target power supply in the manner described above for a reactive sputtering period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.99:0.01:3.
example 20
In this embodiment, the sputtering target composition is SrCO 3 +Nb+Ti, similar to example 1, was prepared by setting the three-target power supply in the manner described above for a reactive sputtering period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.999:0.001:3.
example 21
In this embodiment, the sputtering target composition is Sr+NbO+TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.99:0.01:3.
example 22
In the present embodiment of the present invention,the sputtering target material combination is Sr+NbO 2 +TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.99:0.01:3.
example 23
In this embodiment, the sputtering target composition is Sr+Nb 2 O 3 +TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.999:0.001:3.
example 24
In this embodiment, the sputtering target composition is Sr+Nb 2 O 5 +TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.99:0.01:3.
example 25
In this embodiment, the sputtering target composition is Sr+Nb+TiO 2 The preparation method is similar to that of the embodiment 1, and in the formal sputtering, the power supply of the three targets is set in the manner described above, and the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.98:0.02:3.
example 26
In this embodiment, the sputtering target material combination is sr+nbo+ti, and the preparation method is similar to that of embodiment 1, and in the formal sputtering, the power of the three targets is set in the foregoing manner, and the reactive sputtering time period is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.95:0.05:3.
example 27
In this embodiment, the sputtering target composition is Sr+NbO 2 +Ti, similar to example 1, was prepared by setting the three target power supply in the manner described above for a reactive sputtering period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.985:0.015:3.
example 28
In this embodiment, the sputtering target composition is Sr+Nb 2 O 3 +Ti, similar to example 1, was prepared by setting the three target power supply in the manner described above for a reactive sputtering period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.999:0.001:3.
example 29
In this embodiment, the sputtering target composition is Sr+Nb 2 O 5 +Ti, similar to example 1, was prepared by setting the three target power supply in the manner described above for a reactive sputtering period of 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.96:0.04:3.
example 30
In this embodiment, the sputtering target material combination is sr+nb+ti, and the preparation method is similar to that of embodiment 1, and in the formal sputtering, the power of the three targets is set in the foregoing manner, and the reactive sputtering time period is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.995:0.005:3.
examples 31 to 33
The sputtering targets in examples 31-33 were combined as alloy targets + metal targets, and the strontium source, titanium source and niobium source in such formulations were from alloy targets or elemental metal targets; the oxygen source is from the reaction sputtering process, and a proper amount of oxygen-argon mixed gas or air is introduced. In the sputtering strategy of the formula, each target is firstly calibrated according to the target combination calibration mode in the embodiment 1 before the formal sputtering reaction, so as to obtain the linear relation of the sputtering film thickness of each target along with the sputtering power or the sputtering time. Elemental composition ratio Sr of the final sputtered film: ti: nb: o=1: (1-x): x:3, pre-regulating and controlling in the alloy target component control of the target stage, and performing ternary regulation and control by controlling the sputtering power and the sputtering time of the target in the formal sputtering process.
Example 31
In this embodiment, the sputtering target composition is SrTi 0.99 +Nb, the working power supply is a direct current power supply, and the mixed gas proportion is Ar 2 ：O 2 =3: 1 (total flow rate 40 sccm), the substrate temperature was 300 ℃. SrTi is determined through calibration 0.99 Is 100nm/h (100W); the deposition rate of Nb was 100nm/h (100W). Therefore, during formal sputtering, the target power supply power is adjusted to SrTi by adopting the conditions of the same gas flow rate proportion and substrate temperature as the calibration 0.99 (100W DC) and Nb (100W), the reactive sputtering time period was 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.99:0.01:3.
example 32
In this embodiment, the sputtering target composition is SrNb 0.005 +Ti, similar to example 31, was prepared by adjusting the target power to SrNb during normal sputtering 0.005 (100W DC) and Ti (100W DC), the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.995:0.005:3.
example 33
In this embodiment, the sputtering target composition is Nb 0.01 Ti 0.99 +Sr, similar to example 31, was produced by adjusting the target power to Nb during actual sputtering 0.015 Ti 0.985 (100W DC) and Sr (100W DC), the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.99:0.01:3.
example 34
In this embodiment, the sputtering target is a composite target, and the strontium source, the titanium source, the niobium source and the oxygen source of the formulation are all derived from the composite target SrNb x Ti 1-x O 3 . In the sputtering strategy of the formula, the element composition ratio Sr of the finally sputtered film is as follows: ti: nb: o=1: (1-x): x:3, pre-regulating and controlling in the composite target component control of the target stage, and regulating and controlling the film thickness by controlling the sputtering power and the sputtering time of the target in the formal sputtering process.
In this embodiment, the sputtering target is SrNb 0.015 Ti 0.985 O 3 The working power supplies are all radio frequency power supplies, and the mixed gas proportion is Ar 2 ：O 2 =3: 1 (total flow rate 40 sccm), the substrate temperature was 300 ℃. SrNb is determined through calibration 0.015 Ti 0.985 O 3 The deposition rate of (2) was 100nm/h (300W). Therefore, in the formal sputtering process, the target power supply power is adjusted to 300W by adopting the conditions of the same gas flow rate proportion and substrate temperature as the calibration, and the reactive sputtering time is 2h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.985:0.015:3.
in the sputtering strategy of each of the above embodiments, srTiO may be selected 3 、BaTiO 3 、LaAlO 3 、ZrO 2 Cu, si or SiO 2 The single crystal material is used as a substrate material, a buffer layer can be added for transition to the single crystal material with larger mismatch, the bulk material of alloy/simple substance metal/composite target material is used as a sputtering target material, the film forming method and technology of radio frequency magnetron sputtering are used, the substrate temperature is set to 300-900 ℃ according to the conventional process of the film forming technology, and the proportion range of mixed gas is maintained as oxygen: argon = 1:2 to 1:5, selecting the optimal technological conditions such as radio frequency power and the like, wherein the total flow rate is 20 sccm-40 sccm, and preparing SrNb x Ti 1-x O 3 A film.
Comparative example 1
In this comparative example, the sputtering target was SrTiO 3 The working power supplies are all radio frequency power supplies, and the mixed gas proportion is Ar 2 ：O 2 =3: 1 (total flow rate 40 sccm), the substrate temperature was 300 ℃. SrTiO is determined through calibration 3 The deposition rate of (2) was 100nm/h (300W). Therefore, the same gas flow rate proportion and substrate temperature condition as the calibration are adopted in the formal sputteringThe power of the target power supply is adjusted to 300W, and the reactive sputtering time is 2h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: o=1: 1:3.
comparative example 2
In this comparative example, the sputtering target composition was Nb 0.02 Ti 0.98 +Sr, similar to example 31, was produced by adjusting the target power to Nb during actual sputtering 0.02 Ti 0.98 (100W DC) and Sr (100W DC), the reactive sputtering time is 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.98:0.02:3.
comparative example 3
In this comparative example, the sputtering target composition was Nb 0.07 i 0.93 Sr was produced in a similar manner as in example 31, and the target power was adjusted to Nb during actual sputtering 0.07 i 0.93 100W dc) and Sr (100W dc), the reactive sputtering time period was 1h. The thickness of the final sputtered film layer was about 200nm. The element composition ratio of the sputtering film is as follows: sr: ti: nb: o=1: 0.93:0.07:3.
comparative example 4
In the comparative example, a sol-gel method film-making process is adopted, and reference is made to Chinese patent with publication number of CN 101333107B: method for preparing strontium titanate film doped with niobium according to mole ratio Sr 2+ ∶Ti 4+ 1:1, respectively measuring strontium acetate and butyl titanate; dissolving strontium acetate in acetic acid to form a solution A; adding Ti with the molar quantity of 0.8 times into butyl titanate in a dropwise manner 4+ Then adding an ethylene glycol methyl ether solvent to form a solution B; after the solution A, B is mixed, stirring uniformly; adding ethylene glycol and glycerol into the mixed solution according to the mass ratio of the ethylene glycol to the glycerol of 2.5:1, regulating the concentration of the solution to 0.15 mol/liter, and uniformly stirring to form the strontium titanate precursor liquid. Coating strontium titanate precursor liquid doped with niobium on a substrate, rotating by a spin coater, wherein the spin coater speed is 3000r/min, and the spin coater time is 30s to form a gel film; then thermal decomposition treatment is carried out, the substrate coated with the colloid is placed in a sintering furnace, and the furnace temperature is slowly controlled from room temperatureHeating to 150deg.C, and drying for 20min to obtain solid film. The final film layer thickness was about 300nm. The element composition ratio of the film is as follows: sr: ti: o=1: 1:3.
comparative example 5
The preparation method of this example is similar to that of comparative example 3, and reference is made to the patent publication No. CN101333107B for a method for preparing a strontium titanate film doped with niobium, in terms of mole ratio Sr 2+ ∶Ti 4+ ∶Nb 5+ =1:0.98:0.02, strontium acetate, butyl titanate, and niobium-citric acid glycol solutions were measured separately. Coating the precursor liquid on a substrate, rotating the substrate by a spin coater, and forming a gel film, wherein the spin coater speed is 3000r/min and the spin coater time is 30 s; and then carrying out thermal decomposition treatment, placing the substrate coated with the colloid in a sintering furnace, slowly heating the furnace temperature from room temperature to 150 ℃, and drying for 20min to obtain a solid film. Heating to 500 ℃ at a speed of 2.5 ℃/min, and preserving heat for 30min to form an inorganic film; finally, sintering to form a phase, heating the furnace temperature to 650 ℃ at a speed of 20 ℃/min, preserving heat for 40min, and then cooling the furnace temperature to room temperature, namely forming the strontium titanate film doped with niobium on the substrate. The final film layer thickness was about 300nm. The element composition ratio of the film is as follows: sr: ti: nb: o=1: 0.98:0.02:3.
comparative example 6
The preparation method of this example is similar to that of comparative example 5, and reference is made to the patent publication No. CN101333107B for a method for preparing a strontium titanate film doped with niobium, in terms of mole ratio Sr 2+ ∶Ti 4+ ∶Nb 5+ =1:0.93:0.07, strontium acetate, butyl titanate, and niobium-citric acid glycol solutions were measured separately. Coating the precursor liquid on a substrate, rotating the substrate by a spin coater, and forming a gel film, wherein the spin coater speed is 3000r/min and the spin coater time is 30 s; and then carrying out thermal decomposition treatment, placing the substrate coated with the colloid in a sintering furnace, slowly heating the furnace temperature from room temperature to 150 ℃, and drying for 20min to obtain a solid film. Heating to 500 ℃ at a speed of 2.5 ℃/min, and preserving heat for 30min to form an inorganic film; finally, sintering and phase forming treatment is carried out, the furnace temperature is raised to 650 ℃ at the speed of 20 ℃/min, and the temperature is kept for 40min, and then the furnace temperature is cooled to room temperature, namely, the substrate is shapedForming the strontium titanate film doped with niobium. The final film layer thickness was about 300nm. The element composition ratio of the film is as follows: sr: ti: nb: o=1: 0.93:0.07:3.
for the strontium titanate doped films prepared in examples 1 to 34 and comparative examples 1 to 4, yield indexes during film preparation were recorded and are shown in Table 1. The specific measurement method of the product yield is as follows: the transmission spectrum of the film is measured by a U-3010 ultraviolet spectrometer, and the thickness uniformity of the prepared film sample is characterized by the spectrum analysis result. And adopting a random sampling mode to extract n more than or equal to 20 measurement samples, taking 10 measurement points from each measurement sample, ensuring that data are independent and intrinsic, and ensuring that the comprehensive film thickness error is less than or equal to 5 percent. Let the number of qualified samples be y, the yield of the product be y/n.
For the films prepared in examples 1 to 34 and comparative examples 1 to 4, the capacitance formula c=ε was combined at room temperature of 30 ℃ according to the thickness d, cross-sectional area S and other information of the sample r S/(4 pi kd), dielectric constant epsilon is calculated r The results are shown in Table 1.
Table 1 performance parameters of the films prepared in the examples
| Numbering device | Sputtering target material combination | Film component | Film thickness | Dielectric constant (1 kHz) | Yield of product (%) |
| Example 1 | SrO+NbO+TiO 2 | SrNb 0.001 Ti 0.999 O 3 | 200nm | 12280 | 91 |
| Example 2 | SrO+NbO 2 +TiO 2 | SrNb 0.02 Ti 0.98 O 3 | 200nm | 20659 | 96 |
| Example 3 | SrO+Nb 2 O 3 +TiO 2 | SrNb 0.05 Ti 0.95 O 3 | 200nm | 10252 | 93 |
| Example 4 | SrO+Nb 2 O 5 +TiO 2 | SrNb 0.04 Ti 0.96 O 3 | 200nm | 16994 | 91 |
| Example 5 | SrO+Nb+TiO 2 | SrNb 0.015 Ti 0.985 O 3 | 200nm | 56806 | 95 |
| Example 6 | SrO+NbO+Ti | SrNb 0.01 Ti 0.99 O 3 | 200nm | 42383 | 99 |
| Example 7 | SrO+NbO 2 +Ti | SrNb 0.01 Ti 0.99 O 3 | 200nm | 46070 | 91 |
| Example 8 | SrO+Nb 2 O 3 +Ti | SrNb 0.001 Ti 0.999 O 3 | 200nm | 25379 | 97 |
| Example 9 | SrO+Nb 2 O 5 +Ti | SrNb 0.005 Ti 0.995 O 3 | 200nm | 34750 | 95 |
| Example 10 | SrO+Nb+Ti | SrNb 0.015 Ti 0.985 O 3 | 200nm | 51286 | 96 |
| Example 11 | SrCO 3 +NbO+TiO 2 | SrNb 0.015 Ti 0.985 O 3 | 200nm | 51191 | 95 |
| Example 12 | SrCO 3 +NbO 2 +TiO 2 | SrNb 0.005 Ti 0.995 O 3 | 200nm | 29037 | 93 |
| Example 13 | SrCO 3 +Nb 2 O 3 +TiO 2 | SrNb 0.015 Ti 0.985 O 3 | 200nm | 52603 | 97 |
| Example 14 | SrCO 3 +Nb 2 O 3 +TiO 2 | SrNb 0.015 Ti 0.985 O 3 | 200nm | 24786 | 95 |
| Example 15 | SrCO 3 +Nb+TiO 2 | SrNb 0.015 Ti 0.985 O 3 | 200nm | 53039 | 100 |
| Example 16 | SrCO 3 +NbO+Ti | SrNb 0.005 Ti 0.995 O 3 | 200nm | 35154 | 95 |
| Example 17 | SrCO 3 +NbO 2 +Ti | SrNb 0.02 Ti 0.98 O 3 | 200nm | 23205 | 99 |
| Example 18 | SrCO 3 +Nb 2 O 3 +Ti | SrNb 0.005 Ti 0.995 O 3 | 200nm | 34838 | 97 |
| Example 19 | SrCO 3 +Nb 2 O 5 +Ti | SrNb 0.01 Ti 0.99 O 3 | 200nm | 37807 | 94 |
| Example 20 | SrCO 3 +Nb+Ti | SrNb 0.001 Ti 0.999 O 3 | 200nm | 25274 | 100 |
| Example 21 | Sr+NbO+TiO 2 | SrNb 0.01 Ti 0.99 O 3 | 200nm | 37990 | 98 |
| Example 22 | Sr+NbO 2 +TiO 2 | SrNb 0.01 Ti 0.99 O 3 | 200nm | 41352 | 92 |
| Example 23 | Sr+Nb 2 O 3 +TiO 2 | SrNb 0.001 Ti 0.999 O 3 | 200nm | 26218 | 93 |
| Example 24 | Sr+Nb 2 O 5 +TiO 2 | SrNb 0.01 Ti 0.99 O 3 | 200nm | 44386 | 90 |
| Example 25 | Sr+Nb+TiO 2 | SrNb 0.02 Ti 0.98 O 3 | 200nm | 26195 | 98 |
| Example 26 | Sr+NbO+Ti | SrNb 0.05 Ti 0.95 O 3 | 200nm | 10224 | 91 |
| Example 27 | Sr+NbO 2 +Ti | SrNb 0.015 Ti 0.985 O 3 | 200nm | 54502 | 92 |
| Example 28 | Sr+Nb 2 O 3 +Ti | SrNb 0.001 Ti 0.999 O 3 | 200nm | 26139 | 97 |
| Example 29 | Sr+Nb 2 O 5 +Ti | SrNb 0.04 Ti 0.96 O 3 | 200nm | 16127 | 94 |
| Example 30 | Sr+Nb+Ti | SrNb 0.005 Ti 0.995 O 3 | 200nm | 30995 | 91 |
| Example 31 | SrTi 0.99 +Nb | SrNb 0.01 Ti 0.99 O 3 | 200nm | 41425 | 97 |
| Example 32 | SrNb 0.005 +Ti | SrNb 0.005 Ti 0.995 O 3 | 200nm | 31802 | 90 |
| Example 33 | Nb 0.01 Ti 0.99 +Sr | SrNb 0.01 Ti 0.99 O 3 | 200nm | 39032 | 90 |
| Example 34 | SrNb 0.015 Ti 0.985 O 3 | SrNb 0.015 Ti 0.985 O 3 | 200nm | 46688 | 95 |
| Comparative example 1 | SrTiO 3 | SrTiO 3 | 200nm | 296 | 96 |
| Comparative example 2 | Nb 0.02 Ti 0.98 +Sr | SrNb 0.02 Ti 0.98 O 3 | 200nm | 21584 | 95 |
| Comparative example 3 | Nb 0.07 Ti 0.93 +Sr | SrNb 0.07 Ti 0.93 O 3 | 200nm | 5584 | 98 |
| Comparative example 4 | Sol gel process | SrTiO 3 | 300nm | 269 | 66 |
| Comparative example 5 | Sol gel process | SrNb 0.02 Ti 0.98 O 3 | 300nm | 23684 | 56 |
| Comparative example 6 | Sol gel process | SrNb 0.07 Ti 0.93 O 3 | 300nm | 6384 | 63 |
In combination with examples 1 to 34 and comparative example 1, it can be seen that SrNb is formed by incorporating Nb into the elemental composition of the film x Ti 1-x O 3 The dielectric constant of the film can be greatly improved; when x is greater than 0.001, the dielectric constant of the film is significantly increased to about 2×10 in combination with each of examples and comparative example 2 4 The method comprises the steps of carrying out a first treatment on the surface of the With increasing value of x, the dielectric constant is further increased, reaching a peak at x=0.015, about 5×10 4 . However, when the value of x is further increased beyond 0.015, the dielectric constant is reduced, so that the doping concentration x of Nb in the thin film is set between 0.001 and 0.015 in the embodiment of the present invention, so as to obtain the thin film with the best dielectric constant performance. By combining the examples and the comparative examples 3 to 4, it can be seen that the film-forming process adopted in the examples of the present invention can greatly improve the yield of the product compared with the sol-gel method.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.
Claims (5)
1. A preparation method of a strontium titanate doped niobium film is characterized in that,
the elemental components of the film are: srNb x Ti 1-x O 3 ；
The film is prepared by a magnetron sputtering method, wherein the magnetron sputtering method adopts targets containing strontium, niobium and titanium elements, and the targets containing strontium, niobium and titanium elements comprise strontium source targets, niobium source targets and titanium source targets; the strontium source target is Sr target, srO target or SrCO 3 A target; the niobium source target material is a Nb target, a NbO target and NbO 2 Target, nb 2 O 3 Targets or Nb 2 O 5 A target; the titanium source target is Ti target or TiO target 2 A target; oxygen in the film comes from an oxide target or oxygen-argon mixed gas introduced in the magnetron sputtering process; by controlling sputtering of the target during magnetron sputteringThe power and the sputtering time lead the element composition ratio of the sputtered film to accord with Sr: ti: nb: o=1: (1-x): x:3, wherein x=0.001 to 0.05;
in the magnetron sputtering process, the following sputtering power control mode is adopted:
in the method, in the process of the invention,sputtering power when the strontium source target is metallic strontium, +.>Sputtering power when strontium oxide is used as the strontium source target, +.>Sputtering power when the strontium source target is strontium carbonate;
sputtering power when the niobium source target is metallic niobium, +.>The sputtering power is the sputtering power when the niobium source target is niobium monoxide,sputtering power when niobium source target is niobium dioxide, +.>Sputtering power when niobium source target is niobium trioxide, < >>The sputtering power is the sputtering power when the niobium source target is niobium pentoxide;
sputtering power when the titanium source target is metallic titanium, +.>Sputtering power when the titanium source target is titanium oxide;
the thickness of the prepared film is more than or equal to 100nm, and the dielectric constant of the film at room temperature is more than 1 multiplied by 10 4 The method comprises the steps of carrying out a first treatment on the surface of the The space group of the thin film crystal is Pm-3m, after photon sintering, the grain size range is 4-12nm, and the average grain size is 5nm; when the value of x is greater than 0.001, the dielectric constant of the film increases to 2X 10 at room temperature 4 The method comprises the steps of carrying out a first treatment on the surface of the As the value of x increases, the dielectric constant at room temperature increases further, and peaks at x=0.015, and when x exceeds 0.015, the dielectric constant at room temperature decreases.
2. The method for producing a strontium titanate doped thin film according to claim 1, wherein x=0.005 to 0.04.
3. The method for preparing a strontium titanate doped niobate thin film according to claim 2, wherein x=0.01 to 0.02, and the dielectric constant of the thin film at room temperature is 2×10 4 ～5×10 4 Between them.
4. A strontium titanate doped film prepared by the method of any of claims 1-3, wherein the elemental composition of the film is: srNb x Ti 1-x O 3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the prepared film is more than or equal to 100nm, and the dielectric constant of the film at room temperature is more than 1 multiplied by 10 4 The method comprises the steps of carrying out a first treatment on the surface of the Specifically, when the value of x is greater than 0.001, the film medium at room temperatureThe electric constant is increased to 2 multiplied by 10 4 The method comprises the steps of carrying out a first treatment on the surface of the As the value of x increases, the dielectric constant at room temperature increases further, and peaks at x=0.015, and when x exceeds 0.015, the dielectric constant at room temperature decreases.
5. The use of the strontium titanate doped with niobium according to claim 4.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276438A (en) * | 1999-06-08 | 2000-12-13 | 中国科学院物理研究所 | Sb-doped strontium titanate film and its preparing process |
| CN101333107A (en) * | 2008-08-04 | 2008-12-31 | 西南交通大学 | Process for preparing niobium-doped strontium titanate film |
| JP2012094717A (en) * | 2010-10-27 | 2012-05-17 | Fujitsu Ltd | Thermoelectric conversion device and method for producing the same |
| CN103833352A (en) * | 2014-01-13 | 2014-06-04 | 河南科技大学 | Self-doped strontium titanate ferroelectric film and preparation method thereof |
| CN116813331A (en) * | 2023-07-10 | 2023-09-29 | 清华大学 | Strontium titanate ceramic and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1276438A (en) * | 1999-06-08 | 2000-12-13 | 中国科学院物理研究所 | Sb-doped strontium titanate film and its preparing process |
| CN101333107A (en) * | 2008-08-04 | 2008-12-31 | 西南交通大学 | Process for preparing niobium-doped strontium titanate film |
| JP2012094717A (en) * | 2010-10-27 | 2012-05-17 | Fujitsu Ltd | Thermoelectric conversion device and method for producing the same |
| CN103833352A (en) * | 2014-01-13 | 2014-06-04 | 河南科技大学 | Self-doped strontium titanate ferroelectric film and preparation method thereof |
| CN116813331A (en) * | 2023-07-10 | 2023-09-29 | 清华大学 | Strontium titanate ceramic and preparation method and application thereof |
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